Thin-Film PV Technologiesdelftxdownloads.tudelft.nl/ET3034TUx-SolarEnergy/Week5/... · 2014. 8....
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Arno Smets Thin-Film PV Technologies Thin-Film Silicon PV Technology I Week 5.2.1
Transcript of Thin-Film PV Technologiesdelftxdownloads.tudelft.nl/ET3034TUx-SolarEnergy/Week5/... · 2014. 8....
Arno Smets
Thin-Film PV TechnologiesThin-Film Silicon PV Technology I
Week 5.2.1
Thin film Silicon solar cell
Semiconductor MaterialsIV semiconductors: Si, Ge
a-Si:Hnc-Si:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor MaterialsIV semiconductors: Si, Ge
a-Si:Hnc-Si:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor MaterialsIV semiconductors: Si, Ge
a-Si:Hnc-Si:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor MaterialsIV semiconductors: Si, Ge
a-Si:Hnc-Si:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor MaterialsIV semiconductors: Si, Ge
a-Si:Hnc-Si:H
a-SixGe1-x:Hnc-SixGe1-x:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor MaterialsIV semiconductors: Si, Ge
a-Si:Hnc-Si:H
a-SixGe1-x:Hnc-SixGe1-x:Ha-SixC1-x:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Semiconductor MaterialsIV semiconductors: Si, Ge
a-Si:Hnc-Si:H
a-SixGe1-x:Hnc-SixGe1-x:H
a-SixC1-x:Hnc-SixO1-x:H
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
1H
Amorphous Network
Source:www.youtube.com/watch?v=OyVUmucwhPo
2 Material Phases: amorphous and microcrystalline silicon
stationarycolumnargrowth
incubationzone
substrate
Several100nm
~30-50 nm
Momentum
Ene
rgy
Indirect band gap
photonphonon
Comparison with c-Si: lattice
2.48 1.24 0.83 0.62 0.50 0.41
106
105
104
103
102
101
100
10-1
0.5 1.0 1.5 2.0 2.5 3.0
Wavenlength [micrometers]
Photon [eV]
Ab
sorp
tio
n c
oef
fici
ent
[cm
-1]
a-Si Ge:H
a-Si:H
c-Si
alloy Band gap
a-Si:H 1.6-1.9 eV
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
P(l
) (x
10
9W
m-2
m-1
)
0 500 1000 1500 2000 2500
Wavenlength (x10-9 m)
AM 1.5
absorption no absorption
alloy Band gap
a-Si:H 1.6-1.9 eV
nc-Si:H 1.1-1.3 eV
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
P(l
) (x
10
9W
m-2
m-1
)
0 500 1000 1500 2000 2500
Wavenlength (x10-9 m)
AM 1.5
absorption no absorption
alloy Band gap
a-Si:H 1.6-1.9 eV
nc-Si:H 1.1-1.3 eV
a-SiGe:H 1.4-1.6 eV
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
P(l
) (x
10
9W
m-2
m-1
)
0 500 1000 1500 2000 2500
Wavenlength (x10-9 m)
AM 1.5
absorption no absorption
alloy Band gap
a-Si:H 1.6-1.9 eV
nc-Si:H 1.1-1.3 eV
a-SiGe:H 1.4-1.6 eV
a-SiC:H >1.9 eV
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
P(l
) (x
10
9W
m-2
m-1
)
0 500 1000 1500 2000 2500
Wavenlength (x10-9 m)
AM 1.5
absorption no absorption
alloy Band gap
a-Si:H 1.6-1.9 eV
nc-Si:H 1.1-1.3 eV
a-SiGe:H 1.4-1.6 eV
a-SiC:H >1.9 eV
nc-SiO:H >2.0 eV
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
P(l
) (x
10
9W
m-2
m-1
)
0 500 1000 1500 2000 2500
Wavenlength (x10-9 m)
AM 1.5
absorption no absorption
Defects in the lattice
An a-Si:H p-i-n junction
Glass
TCO
a-Si:H
Back Reflector
a-Si:H: drift mechanism required for transport
EFermi
Intrinsic a-Si:H n-a-Si:Hp-a-SiC:H
Principle of a-Si:H p-i-n junction
EFermi
Intrinsic a-Si:H n-a-Si:Hp-a-SiC:H
Conduction band
Valence band
A typical a-Si:H p-i-n junction
Glass
TCO
a-Si:H
Back Reflector
TCO
p
i
n
250 500 750 1000 1250 1500 1750 2000 2250 2500
5800 K Blackbody Spectrum
Radiation at Sea Level
Absorption Bands
H2OCO2H2O
H2O
H2O
0
0.5
1
1.5
2
2.5
Sunlight Top of the Atmosphere
InfraredVisibleUV
Spec
tral
Irra
dia
nce
(W/m
2/n
m)
H2O
O2
O3
Wavelength (nm)
Solar Radiation Spectrum
Does not cover entire spectrum!
Glass
TCO
a-Si:H
Back Reflector
Absorptiona-Si:H
250 500 750 1000 1250 1500 1750 2000 2250 2500
5800 K Blackbody Spectrum
Radiation at Sea Level
Absorption Bands
H2OCO2H2O
H2O
H2O
0
0.5
1
1.5
2
2.5
Sunlight Top of the Atmosphere
InfraredVisibleUV
Spec
tral
Irra
dia
nce
(W/m
2/n
m)
H2O
O2
O3
Wavelength (nm)
Solar Radiation Spectrum
Does not cover entire spectrum!
Glass
TCO
nc-Si:H
Back Reflector
Absorptionnc-Si:H
250 500 750 1000 1250 1500 1750 2000 2250 2500
5800 K Blackbody Spectrum
Radiation at Sea Level
Absorption Bands
H2OCO2H2O
H2O
H2O
0
0.5
1
1.5
2
2.5
Sunlight Top of the Atmosphere
InfraredVisibleUV
Spec
tral
Irra
dia
nce
(W/m
2/n
m)
H2O
O2
O3
Wavelength (nm)
Solar Radiation Spectrum
AbsorptionA-Si:H
Absorptionnc-Si:H
Back Reflector
TCO
a-Si:H
mc-Si:H
Glass
Better spectrum coverage!
