Spin-dependent tunnelling junctions with amorphous … · c; >A f_)X< ¡ >T9

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Spin-dependent tunneling junctions with amorphous CoNbHfFe Manish Sharma, Lung T. Tran, Thomas C. Anthony Benédicte Warot 1 , Amanda K. Petford-Long 1 Information Access Laboratory HP Laboratories Palo Alto HPL-2002-189 September 9 th , 2002* E-mail: [email protected] We report on using amorphous Co 77 Nb 16 Hf 6 Fe 1 (CoNbHfFe) as the ferromagnetic electrode in bottom-pinned magnetic tunnel junctions (MTJ's). Exchange bias with CoNbHfFe was achieved with Mn 75 Ir 25 as the antiferromagnetic pinning layer. In a first sample with both pinned and sense layers being CoNbHfFe, a tunnelling magnetoresistance ratio (TMR) of 5% was found. In comparison, a TMR of 16.4% was found in a second sample with a pinned Co 50 Fe 50 electrode and a sense CoNbHfFe electrode. This leads to a low spin-polarization of about 15% for CoNbHfFe at room temperature. High-resolution transmission electron microscopy (HREM) images show that while the first sample has a fully amorphous sense layer, the sense layer in the second sample is largely amorphous with nano-crystalline inclusions. Both pinned layers are found to be highly textured and crystalline. To study switching distributions, large MTJ arrays were patterned using electron-beam lithography and the magneto-optic kerr effect (MOKE) was used to measure the switching of the sense layer. MOKE results for the two samples are compared in arrays with devices of different sizes. * Internal Accession Date Only Approved for External Publication 1 Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK Copyright Hewlett-Packard Company 2002

Transcript of Spin-dependent tunnelling junctions with amorphous … · c; >A f_)X< ¡ >T9

Page 1: Spin-dependent tunnelling junctions with amorphous … · c; >A f_)X< ¡ >T9

Spin-dependent tunneling junctions with amorphous CoNbHfFe Manish Sharma, Lung T. Tran, Thomas C. Anthony Benédicte Warot1, Amanda K. Petford-Long1

Information Access Laboratory HP Laboratories Palo Alto HPL-2002-189 September 9th , 2002* E-mail: [email protected] We report on using amorphous Co77Nb16Hf6Fe1 (CoNbHfFe) as the

ferromagnetic electrode in bottom-pinned magnetic tunnel junctions (MTJ's). Exchange bias with CoNbHfFe was achieved with Mn75Ir25 as the antiferromagnetic pinning layer. In a first sample with both pinned and sense layers being CoNbHfFe, a tunnelling magnetoresistance ratio (TMR) of 5% was found. In comparison, a TMR of 16.4% was found in a second sample with a pinned Co50Fe 50 electrode and a sense CoNbHfFe electrode. This leads to a low spin-polarization of about 15% for CoNbHfFe at room temperature. High-resolution transmission electron microscopy (HREM) images show that while the first sample has a fully amorphous sense layer, the sense layer in the second sample is largely amorphous with nano-crystalline inclusions. Both pinned layers are found to be highly textured and crystalline. To study switching distributions, large MTJ arrays were patterned using electron-beam lithography and the magneto-optic kerr effect (MOKE) was used to measure the switching of the sense layer. MOKE results for the two samples are compared in arrays with devices of different sizes.

* Internal Accession Date Only Approved for External Publication 1 Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK Copyright Hewlett-Packard Company 2002

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Page 9: Spin-dependent tunnelling junctions with amorphous … · c; >A f_)X< ¡ >T9
Page 10: Spin-dependent tunnelling junctions with amorphous … · c; >A f_)X< ¡ >T9

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Page 11: Spin-dependent tunnelling junctions with amorphous … · c; >A f_)X< ¡ >T9

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Page 12: Spin-dependent tunnelling junctions with amorphous … · c; >A f_)X< ¡ >T9

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