Schedule Performance Design SpecificationSchedule 22 Feb. 2001@CERN ATLAS MDT Electronics...
Transcript of Schedule Performance Design SpecificationSchedule 22 Feb. 2001@CERN ATLAS MDT Electronics...
ATLAS MDT Electronics PDR, 22-Feb 2001 Yasuo Arai, page 1
ATLAS
ATLAS Muon TDC (AMT)
Yasuo Arai (KEK)[email protected]
http://atlas.kek.jp/~araiy/
• Specification• Design• Performance• Schedule
22 Feb. 2001@CERNATLAS MDT ElectronicsPreliminary Design Review
ATLAS MDT Electronics PDR, 22-Feb 2001 Yasuo Arai, page 2
ATLAS
Specifications of ATLAS MDT TDC (AMT)
• ~370 k channels (16,000 chips)• ~0.5 ns timing resolution• 400 kHz input rate, 100 kHz trigger rate• Leading and Trailing edge (width) time measurement• Trigger Latency > 3 µs• Low-cost, Low-power (~10 mW) & High-density (24 ch/chip)• LVDS interface for active signals during measurement• Serial output (40 Mbps)• Radiation Tolerant (~11 krad, 1.2x1013 n/cm2 @10year LHC)• JTAG I/F, BIST, Serial control• 144 pins plastic QFP
ATLAS MDT Electronics PDR, 22-Feb 2001 Yasuo Arai, page 3
ATLAS
Short History
Design study (Y.Arai & J.Christiansen).(CERN) AMT-0
(KEK)AMT-TEG
AMT-1
(AMT-2)
1996
2001
2000
1999
1998
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ATLAS
Block Diagram of the AMT
ATLAS MDT Electronics PDR, 22-Feb 2001 Yasuo Arai, page 5
ATLAS
AMT-1 chip (0.3µm Toshiba CMOS Gate-Array, 6 mm x 6mm)
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ATLAS
PLL Stability
300
200
100
0
σ jitter[p
s]
12080400
PLL Osc Freq [MHz]
3.73.32.92.5
Vdd[V]
vs. Freq
vs. Vdd
(b)
σjitter(a)
Input Clock(40 MHz)
PLL OSC output(80MHz)
trigger
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ATLAS
Double Pulse Resolution
An example of pulse which recorded successfully
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ATLAS
400
300
200
100
0
Cou
nts
-2 -1 0 1 2
∆t[ns]
RMS=305 ps
0.4
0.2
0.0
-0.2
INL[
ns]
151050TDC count
Max=+/-0.13ns, RMS=0.07ns(b)
0.4
0.2
0.0
-0.2
DN
L[ns
]
Max=+/-0.14ns, RMS=0.06ns(a)
Time Resolution
Differential & IntegralNon-Linearity
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ATLAS
Serial Output
LVDS outputwaveform at 40 Mbps
Data
Strobe
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ATLAS
Power Consumption
• Power consumption of the AMT-1 is ~500 mW/chip(~20mW/chan)
• Factor two larger than the target value• Main source of the power consumption is LVDS receiver
(~16 mW).• A new LVDS receiver is under development which
consumes only 1/4 of the present receiver
ATLAS MDT Electronics PDR, 22-Feb 2001 Yasuo Arai, page 11
ATLAS
Radiation Tolerance
• Source : 60Co (~90 rad(Si)/sec)• Follow MIL-STD method.• 1 week ann �ealing at 100 C• Estimated level is <11 krad/10 year
(@Endcap, Safety factor=4)
150
100Osc
. Fre
q.[M
Hz]
Chip 1 Chip 2
1.0
0.5
0.0
Idd[
A]
1 10 100
Dose[krad]before irradiation
Chip 1+2
0.8
0.6
0.4
Vth[V]
(a) NMOS
-1.0
-0.8
-0.6
Vth[V]
Dose[krad]
10 100
before Irrad. after anneal.
(b) PMOS
10-12
10-11
10-10
Id[A]
Dose[krad]
10 100
before Irrad. after anneal.
(b) PMOS
10-11
10-10
10-9
10-8
10-7
10-6
10-5
Id[A]
(a) NMOS
Total Ionizing Dose ( γ )
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ATLAS
Radiation Tolerance (cont.)Displacement Damage (neutron)
• Irradiated at the PROSPERO reactor• 8 chips :1.0 x 1013 n/cm2, 4 chips : 1.6 x 1013 n/cm2
• Expected neutron flux is <1.2 x 1013 n/cm2/10 years• Any damage was not observed
Single Event Effect (hadrons)
• No Measurment yet for Single Event Effect (SEE)• Estimated fluence is <1010 h/cm2/10years.• Assume a SEU cross section of 10-13/cm2/bit,
=> 1.5 SEU/day/MDT for the contents of CSR.• AMT can detect 1 bit SEU and report by an error word• Even AMT is stacked, the effect is only for 24 ch• SEE test will be done in Japan
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ATLAS
Schedule
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ATLAS
Summary
❏ A prototype TDC chip (AMT-1) was successfully developed.
❏ AMT-1 fulfils most of requirements.
❏ ~400 AMT-1 chips will be used in the 10 kch test.
❏ New LVDS receiver has been developed to reduce powerconsumption.
❏ SEE test is planned in Japan.
❏ AMT-2 is now under development, and will be submitted inMarch.
❏ Mass production wiil be finished early next year.