S-Parameter Extraction - Diamond Engineeringdiamondeng.net/library/SparameterExtraction.pdf ·...
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DIAMOND ENGINEERING 484 Main Street #16 Ph (530) 626-3857 Fax (530) 626-0495 www.diamondeng.net Using A Combination Of Measurement And Software Tools To Extract S-Parameters From An Imperfect World. Note: Most VNA’s provide for Delay settings to establish reference measurement planes. This does not negate the reactive and loss effects of the either the Adaptor or the Application Circuit This note describes the S-Parameter measurement of the MGF0915A Power GaAs FET using the Mitsubishi D-Case Application Breadboard. A bias network is established which is “Transparent” to the RF input and output over the band of interest (See Mitsubishi Bias Application note). The device is measured using a VNA with opposite sex cable ends. An output SMA adaptor is used between the Application Circuit and the cable end. The measured S-Parameters are then mathematically corrected for Adaptor [S] matrix and the electrical model for the D-Case Application Circuit board using State Of The Art circuit simulation software. MGF0915A Measured Using The D-Case Application PCB Barrel Adaptor included in measurement Application PCB included in measurement Vgs (-2.5v) Ids (+10v 500Ma) COAX RHO= TAND= ER= L= Do= Di= ID= Cu Dk 2.05 L4 mil Da mil 47 mil CX1 1 COAX RHO= TAND= ER= L= Do= Di= ID= Cu Dk 2.05 L4 mil Da mil 47 mil CX2 CAP C= ID= Cj pF C1 IND L= ID= L2 nH L1 IND L= ID= L3 nH L3 PORT Z= P= 50 Ohm 1 PORT Z= P= 50 Ohm 2 Cj=0.0093335 Cu=1.19 Dk=0.00234 L1=0.0103 L2=0.0527 L3=0.016 L4= 325 Da=149 The electrical Equivalent Circuit For The SMA VNA Adaptor This is the equalvalent of the epoxy capture
Transcript of S-Parameter Extraction - Diamond Engineeringdiamondeng.net/library/SparameterExtraction.pdf ·...
DIAMOND ENGINEERING 484 Main Street #16 Ph (530) 626-3857 Fax (530) 626-0495 www.diamondeng.net
Using A Combination Of Measurement And Software Tools To Extract S-Parameters From An Imperfect World.
Note: Most VNA’s provide for Delay settings to establish reference measurement planes. This does not negate the reactive and loss effects of the either the Adaptor or the Application Circuit
This note describes the S-Parameter measurement of the MGF0915A Power GaAs FET using
the Mitsubishi D-Case Application Breadboard. A bias network is established which is “Transparent” to the RF input and output over the band of interest (See Mitsubishi Bias Application note). The device is measured using a VNA with opposite sex cable ends. An output SMA adaptor is used between the Application Circuit and the cable end. The measured S-Parameters are then mathematically corrected for Adaptor [S] matrix and the electrical model for the D-Case Application Circuit board using State Of The Art circuit simulation software.
MGF0915A MeasuredUsing The D-CaseApplication PCB
Barrel Adaptorincluded inmeasurement
Application PCBincluded inmeasurement Vgs (-2.5v) Ids (+10v 500Ma)
COAX
RHO=TAND=
ER=L=
Do=Di=ID=
Cu Dk 2.05
L4 milDa mil47 milCX1
1
COAX
RHO=TAND=
ER=L=
Do=Di=ID=
Cu Dk 2.05
L4 milDa mil
47 milCX2
CAP
C=ID=
Cj pFC1
IND
L=ID=
L2 nHL1
IND
L=ID=
L3 nHL3 PORT
Z=P=
50 Ohm1
PORT
Z=P=
50 Ohm2
Cj=0.0093335
Cu=1.19
Dk=0.00234
L1=0.0103
L2=0.0527
L3=0.016
L4= 325Da=149
The electrical Equivalent Circuit ForThe SMA VNA Adaptor
This is the equalvalentof the epoxy capture
DIAMOND ENGINEERING 484 Main Street #16 Ph (530) 626-3857 Fax (530) 626-0495 www.diamondeng.net
Using A Combination Of Measurement And Software Tools To Extract S-Parameters From An Imperfect World.
COAXI2
F=A=K=L=Z=
ID=
0.1 GHz0.00833 2.3 343 milZc CX1
CAP
C=ID=
Ca pFC1
MSUB
Name=ErNom=Tand=Rho=
T=H=
Er=
GeTek1 2.2
0.0147 .7 1.4 mil28 mil
4
MLIN
L=W=
ID=
267 milWa mil
TL1 CAP
C=ID=
100 pFC2
MLIN
L=W=
ID=
L1 milWa mil
TL3 PORT
Z=P=
50 Ohm1
PORT
Z=P=
50 Ohm2
L1=626
Ca=0.02835
Wa=47.6
Zc=47.9
-Vgs +VDS
The electrical equivalent for input and outputof the Mitsubishi D-Case Application Test PCB
(-)1 2
NEG2
NET=ID=
Adaptor N1
(-)1 2
NEG2
NET=ID=
ApplicationEquivalentCircuit N2
(-)12
NEG2
NET=ID=
ApplicationEquivalentCircuit N3
1 2
SUBCKT
NET=ID=
Measured[S] S1 PORT
Z=P=
50 Ohm1
PORT
Z=P=
50 Ohm2
Note: Simulation and correction software provided by Applied Research Microwave Office. www.appwave.com
The [S] Parameter measurement correction for adaptor and Application Circuit PCB
DIAMOND ENGINEERING 484 Main Street #16 Ph (530) 626-3857 Fax (530) 626-0495 www.diamondeng.net
Using A Combination Of Measurement And Software Tools To Extract S-Parameters From An Imperfect World.
0 1.0
1.0
-1.0
10
.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
InputOutputZSwp Max
6GHz
Swp Min1GHz
1 2 3 4 5 6Frequency (GHz)
InsertionGain
-10
-5
0
5
10
The corrected S11 and S22
are plotted for the MGF0915A biased at a level of 10v 500Ma. The range over which the measurements are valid are set by the biasing circuit. The low frequency and high frequency resonances for the bias circuit are visible at both the high and low end of both input and output locus.
S11
S22
The high frequency bias circuit parallel resonance
The low frequency bias circuit parallel resonance
The range over which the S-Parametermeasurements are valid
2GHz
4.3GHz
4.3GHz
The Raw Measured S21db
The Corrected Measured S21db
The measured and corrected S21db are plotted for the MGF0915A biased at a level of 10v 500Ma. The bias elements are seen to be only semi transparent over a very narrow bandwidth. Further correction to include the actual bias circuits will result in greater accuracy.
DIAMOND ENGINEERING 484 Main Street #16 Ph (530) 626-3857 Fax (530) 626-0495 www.diamondeng.net
Using A Combination Of Measurement And Software Tools To Extract S-Parameters From An Imperfect World.
1 2 3 4 6
BiasNetworkPhase
-200
-100
0
100
200
1 2 3 4 5 6Frequency (GHz)
BiasNetworkLoss
-1.5
-1
-0.5
0
COAXI2
F=A=K=L=Z=
ID=
0.1 GHz0.00833 2.3 343 milZc CX1
CAP
C=ID=
Ca pFC1
MSUB
Name=ErNom=Tand=Rho=
T=H=
Er=
GeTek1 2.2
0.0271 .7 1.4 mil28 mil4
MLIN
L=W=
ID=
267 milWa mil
TL1 CAP
C=ID=
100 pFC2
CAPQ
ALPH=FQ=Q=C=ID=
1.0 1 GHz95 101 pFC3
VIA
RHO=T=H=D=
ID=
1 0.393701 mil29.6 mil20 milV1
TLINP
F0=Loss=Eeff=
L=Z0=ID=
2 GHz4
1 600 mil222 Ohm
TL3
MLIN
L=W=
ID=
L1 milWa mil
TL4 PORT
Z=P=
50 Ohm1
PORT
Z=P=
50 Ohm2 L1=626
Ca=0.02835
Wa=47.6
Zc=47.9
The correction process can be extended an additional step to include the bias circuit “Transparency Error”. Reference Mitsubishi Bias Note. The 0805 size bias coil is modeled as a high impedance line with slow axial phase velocity. The circuit is measured on the VNA with the MGF0915A device removed. The model parameters are then optimized to match the S11 measurements data. The circuit includes the long open line to the DUT. The S11 phase and amplitude are error are minimized over the band of interest (2GHz to 4GHz)
1-Port S11 VNA Measurement
Optimized 1-PortEquivalent circuitof the ApplicationPCB and Bias Elements
S11db VNA measurement
S11db Circuit Model
5
Frequency (GHz)
The Bias Networkmeasured in theApplication PCBwith the DUT removed
DIAMOND ENGINEERING 484 Main Street #16 Ph (530) 626-3857 Fax (530) 626-0495 www.diamondeng.net
Using A Combination Of Measurement And Software Tools To Extract S-Parameters From An Imperfect World.
0 1.0
1.0
-1.0
10
.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
InputOutputZSwp Max
6GHz
Swp Min1GHz
The Full S-Parameter correction measurementfor the MGF0915A measured in the D-CaseApplication Circuit.
S11 with AplicationCircuit Correction
S11 with AplicationCircuit Correctionand Bias Circuitcorrection
S22 with AplicationCircuit Correctionand Bias Circuitcorrection
S11 with AplicationCircuit Correction
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