S- Band GaN LNA with OIP3>50dBm using Parallel ...
Transcript of S- Band GaN LNA with OIP3>50dBm using Parallel ...
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2018
S- Band GaN LNA with OIP3>50dBm using Parallel
Independently Biased Gates
Kanika Saini1, Amin Ezzeddine2, Waleed Joudeh2, Ho Huang2, Sanjay Raman1
1MICS Group, Dept. of Electrical Eng., Virginia Tech, Arlington, VA2AMCOM Communications Inc., Gaithersburg, MD
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2018
Introduction and Motivation
Linearization Approach
Circuit Design and Simulation
Measurement Results
Conclusion and Future Works
Outline
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2018
Introduction and Motivation
Linearization Approach
Circuit Design and Simulation
Measurement Results
Conclusion and Future Works
Outline
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Introduction and Motivation
GaN devices have similar noise figures compared
to GaAs, Si, SiGe etc.
LNA linearity is a challenge for radar, satellite
systems, base stations etc.
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F. Schwierz and J. J. Liou, “Semiconductor devices for RF applications: evolution and current status,” Microelectronics
Reliability, vol. 41, no. 2, pp. 145–168, Feb. 2001.
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Introduction and Motivation
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Higher Bandgap for GaN
Makes it capable to withstand higher input power.
Eliminates the need of limiter circuitry.
GaN
LNA
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Introduction and Motivation
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12. K. W. Kobayashi, “An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier
With > +51-dBm OIP3,” IEEE J. Solid-State Circuits, vol. 47, no. 10, pp. 2316–2326, Oct. 2012.
Objective of this work is to explore techniques to improve LNA linearity performance and to
develop LNA for microwave.
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2018
Introduction and Motivation
Linearization Approach
Circuit Design and Simulation
Measurement Results
Conclusion and Future Works
Outline
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Linearization Approach
Divide a single FET into
multiple gates and bias
them separately.
If one device is biased in
Class AB and other in deep
Class AB then, inter-mods
of both can be adjusted to
be out of phase with each-
other and get cancelled.
As a prototype, two gates
are done.
For more than two gates bias
control can be difficulty.
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2018
Introduction and Motivation
Linearization Approach
Circuit Design and Simulation
Measurement Results
Conclusion and Future Works
Outline
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GaN Device Technology
0.5 mm GaN HEMT AMCOM Chip
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Bias point
Bias both
devices
individually
Device Picture DC IV Characteristics
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Noise Figure Characterization
Source Pull measurement:
AMCOM 0.5mm GaN HEMT Chip (Die)
■ Using Focus Tuners
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Optimum Source plot
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Circuit Design
Target Specifications
2 – 4 GHz, 40dBm Pout, 50dBm OIP3
3 stage design: First stage stabilized by RC feedback.
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Package
Chip
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Circuit Design
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Cb = 100pF (blocking capacitor), Rf = 220 ohm, Cf = 0.3pF, R1 = 5ohm, R2 = 22ohm
C1 = 1pF, C2 = 2.7pF
W1 = 0.5mm, W2 = 1.25mm, W3 = 2.5mm2 -4GHz LNA , 38dBm Pout
Schematic of circuit on AutoCad
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Small Signal Simulation : CKT 1
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Freq: 2 -4GHz
Gain ~ 43dB, Insertion loss ~7-10dB
NF ~ 2 -2.5dB
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Large Signal simulation :CKT1
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Freq(GHz) SS Gain (dB) Pout(dBm) PAE(%)
2 43 38.63 30.53
2.5 42.62 40.11 34.13
3 41.68 39.84 35.05
3.5 41.52 40.06 36.3
4 43.89 40.37 38.79
Gain
Power
PAE
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Small Signal Simulation : CKT 2
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Freq: 2 - 4GHz
Gain ~ 43dB, Insertion loss ~7-10dB
NF ~ 2 -3dB
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Large Signal Simulation : CKT2
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Freq(GHz) SS Gain (dB) Pout(dBm) PAE(%)
2 40.5 38.25 30.49
2.5 41.06 38.42 29.47
3 42.33 39.29 34.56
3.5 42.8 39.68 33.15
4 44.7 40.36 37.26
Gain
PAE
Power
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Large Signal Simulation : IMD Current
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Computation of IMD Current for both the FET’s AWR microwave office using
foundry model.
Summation of the IMD Current at the output current node.
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Φ difference
Large Signal Simulation
Plot of IMD3 current magnitude &
phase at 2.75GHz
40mA/mm
20mA/mm
60mA/mm
Sum (20_60)
Sum (40_40)
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Large Signal Simulation
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Φ difference
Plot of IMD3 current magnitude &
phase at 3GHz
40mA/mm
20mA/mm
60mA/mm
Sum (20_60)
Sum (40_40)
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Large Signal Simulation
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Φ difference
Plot of IMD3 current magnitude &
phase at 3.25GHz
40mA/mm
20mA/mm
60mA/mm
Sum (20_60)
Sum (40_40)
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Large Signal Simulation
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Φ difference
Plot of IMD3 current magnitude &
phase at 3.5GHz
40mA/mm
20mA/mm
60mA/mm
Sum (20_60)
Sum (40_40)
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Large Signal Simulation
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Φ difference
Plot of IMD3 current magnitude &
phase at 3.75GHz
40mA/mm
20mA/mm
60mA/mm
Sum (20_60)
Sum (40_40)
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2018
Introduction and Motivation
Linearization Approach
Circuit Design and Simulation
Measurement Results
Conclusion and Future Works
Outline
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Circuit Design
Picture of the
assembled prototype
circuits
Circuits identical to each
other except for third
stage to include
package parasitics in
the second circuit.
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3.5”
2”
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Measurement Results: Power and Noise
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Ckt1 , Ckt2
Similar power and noise performance
from 2.75 – 3.75 GHz.
Power 35 ~ 38dBm
Noise 1.8 ~ 3.5dB
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Measurement Results
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B. Kim, J.-S. Ko, and K. Lee, “Highly linear CMOS RF MMIC amplifier using multiple gated transistors and its Volterra series
analysis,” in Microwave Symposium Digest, 2001 IEEE MTT-S International, 2001, vol. 1, pp. 515–518 vol.1.
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Measurement Results : OIP3 & FOM
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2.75 GHz 3 GHz
3.25 GHz
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Measurement Results : OIP3 & FOM
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3.5 GHz
3.75 GHz
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Summary of results and comparison
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Case1: when both the devices are biased
at 40 mA/mm (40_40)
Case2: when first FET is biased at
20mA/mm and second FET is biased at
60mA/mm (20_60)
Comparison of results done at
15dBm (Lower power) (solid curves)
33dBm (Higher power) (dotted curves)
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SOA Comparison
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High output power and high OIP3 compared with previous designs with similar
noise figure with higher linearity FOM
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2018
Introduction and Motivation
Linearization Approach
Circuit Design and Simulation
Measurement Results
Conclusion and Future Works
Outline
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Conclusion
Linearization technique demonstrated by biasing a
single FET in two individual FETs.
If one FET is biased in Class AB and other in deep Class
AB, linearity is improved.
■ Attributed to partial phase cancellation
Improvement in linearity upto 9.5dBm and FOM
upto 14
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Future Work
Demonstrate the technique for MMIC
Use of more than two FET’s
Reconfigurable bias circuits.
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References
S. Cha et al., “Wideband AlGaN/GaN HEMT low noise amplifier for highly
survivable receiver electronics,” in 2004 IEEE MTT-S International Microwave
Symposium Digest (IEEE Cat. No.04CH37535), 2004, vol. 2, p. 829–831
Vol.2.
S. E. Shih et al., “Broadband GaN Dual-Gate HEMT Low Noise Amplifier,” in
2007 IEEE Compound Semiconductor Integrated Circuits Symposium, 2007,
pp. 1–4.
K. W. Kobayashi, “An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise
GaN MMIC Feedback Amplifier With > +51-dBm OIP3,” IEEE J. Solid-State
Circuits, vol. 47, no. 10, pp. 2316–2326, Oct. 2012.
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