RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009...

27
1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics Corporation GET-SB-1812 IF-AGC, Out of Band Tuner, LNA

Transcript of RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009...

Page 1: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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RF device for TV/STB application

Oct., 2009Compound Semiconductor Devices Division

Discrete and IC Operations UnitNEC Electronics Corporation

GET-SB-1812

IF-AGC, Out of Band Tuner, LNA

Page 2: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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D-TV/STB system block diagram

CATV

QAMDEMO

QAMDEMO

OFDMDEMO

8PSKDEMO

SiTuner

MOPLLtuner

DBS/CStuner

OFDMDEMO

MOPLLtuner

VideoDEMO

uPD61521

uPD64011A

µPC3228T5S

MPEG decoder IC

HDMI

HDTV monitor

Str

eam

Pro

cess

or

MPEG2HD Decoder

CPUVCR

DVD-R

HDD

NTSC/PAL

NTSC/PAL

ATA I/F

D-Video D-VCR

modem

TelephoneLine Flash

ROM

AudioDecoder

AVEncoder

I/F

DigitalTerrestrial

Satellite broadcast

AnalogTerrestrial

µPC3224TB

NESG240033µPC3230GR

Out-of-Band tuner

Spl

itter

RF block

µPC3234GV

U/DuPD61541

U/D; Under Development

NESG220033

New

New

MOPLLtuner

Page 3: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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IFIF AGCAGC--amp amp

Page 4: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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NEC AGC amp. FamilyWafer

ProcessIcc

(mA)Gain(dB)

GCR(dB)

NF(dB)

IM3*(dBc)

Package Characteristics

µPC3217GV SAT2-AL 23 53 – 0 53 6.5 50 8pin SSOP -

µPC3218GV SAT2-AL 23 63 – 10 53 3.5 50 8pin SSOP High Gain

µPC3219GV SAT2-AL 36.5 42.5 – 0 42.5 9 58 8pin SSOP Low Distortion

µPC3221GV SAT2-AL 33 60 – 10 50 4.2 47 8pin SSOP Low Noise

µPC3231GV UHS0 36 65-4 61 5.0 56 8pin SSOP

High GainLow distortion

Wide dynamic range

µPC3234GV UHS0 28.5 63 – 4.5 58.5 4.0 54 8pin SSOP

Low NoiseWide dynamic rangeHigh ESD protection

New

GND

VAGC

IN2

VCC

OUT2

OUT1IN1

AGC AMP Driver AMP

AGC Control

GND

pin connection * Pin=-30dBm, Vout=0.5VppIM3 comparison with same test conditions.Because IM3 test condition on the specwas different each product.

Page 5: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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VAGC-GAIN

0

10

20

30

40

50

60

70

0 0.5 1 1.5 2 2.5 3 3.5 4

VAGC (V)

GA

IN 

(dB

)

uPC3221GV

uPC3234GV

uPC3218GVuPC3231GV

AGC-amp series VAGC vs Gain

Page 6: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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AGC-amp seriesPin vs IM3 IM3@Pout=0.5Vpp

20

30

40

50

60

70

80

-60 -50 -40 -30 -20 -10 0

Pin/tone[dBm]

IM3[d

Bc]

uPC3217GV

uPC3218GV

uPC3219GV

uPC3221GV

uPC3231GV

uPC3234GV

Page 7: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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AGC-amp seriesGain Reduction vs NF

Gain Reduction vs NF

0

5

10

15

20

25

-50 -40 -30 -20 -10 0

GAIN Reduction ( dB )

NF

( dB

)

uPC3231GV

uPC3217GV

uPC3218GV

uPC3219GV

uPC3221GV

uPC3234GV

Page 8: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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Concept- Low distortion and wide dynamic range version of µPC3221GVApplication- Digital TV / STB & Cable Modem AGC amplifierPerformance (@5.0V,f=45MHz,ZS=50ohm,ZL=250ohm,Single-ended output)

- ICC :36mA- NF :5.0dB @Maximum Gain

- Gagc(max) :65dB@Pin=-60dBm

- IM3 :53.5dBc(typ.)@Pin=-20dBm/ch, Vout=105dBuV/ch

- GCRin :61dB(typ.)- f(in):30~90MHz- Zin:1.35Kohm//6pF- 8pinSSOP PKG (Mold size:2.9X3.2X1.5mm)

AGC - AMP (µPC3231GV)

Vcc

IN1

IN2

Vagc

GND

OUT1

OUT2

New Product Information

GND

In Mass ProductionIn Mass Production

Page 9: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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Concept- Low distortion, Low Noise and High ESD protection Application- Digital TV / STB & Cable Modem AGC amplifierPerformance(@5.0V,f=45MHz,ZS=50ohm,ZL=250ohm,Single-ended output)

- Higher ESD protection- ICC :28.5mA- NF :4.0dB @Maximum Gain

- Gagc(max) :63dB@Pin=-60dBm

- IM3 :54dBc(typ.)@Pin=-30dBm/ch, Vout=105dBuV/ch

- GCRin :58.5dB(typ.)- f(in):30~100MHz- 8pinSSOP PKG (Mold size:2.9X3.2X1.5mm)

AGC – AMP (µPC3234GV)

Vcc

IN1

IN2

Vagc

GND

OUT1

OUT2

New Product Information

GND

In Mass ProductionIn Mass Production

Page 10: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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µPC3231GV & µPC3234GV Spec.

Parameter Symbol ConditionµPC3231GV µPC3234GV

UnitMin. Typ. Max. Min. Typ. Max.

Circuit Current Itotal No Signal 28 36 44 - 28.5 38 mA

AGC Voltage High Level VAGC(H) Maximum Gain 2.7 - 3.3 3.0 - 3.5 V

AGC Voltage Low Level VAGC(L) Minimum Gain 0 - 0.1 0 - 0.4 V

Input Frequency Range f(in) Fc:-3dBm 30 - 90 30 - 100 MHz

Maximum Voltage Gain Gmax VAGC=2.7V Pin=-60dBm 62.5 65 67.5 60 63 66 dB

Minimum Voltage Gain Gmin VAGC=0.1V Pin=-30dBm 0 4 8 1.5 4.5 7.5 dB

AGC RangeGCRin VAGC=0-2.7V 55.5 61 - 52.5 58.5 - dB

GCRout Vout=1.0Vpp 45 55 - - - - dB

Output Voltage Vout VAGC=3.0V - 1.0 - - 1.0 - Vpp

Intermodulation IM3f1=44MHz, f2=45MHzVout=105dBuV(0.5Vpp)/tone

50 53.5 - 48 54 - dBc

Noise Figure NF VAGC=3.0V - 5.0 6.5 - 4.0 5.5 dB

Input impedance Zin VAGC=0V - 1.35// 6 - -

0.7//2.8

- Kohm //pF

* Pin=-20dBm/tone ** Pin=-30dBm/tone

* ** ***

Ta=25degC,Vcc=5.0V,f=45MHz,ZS=50ohm,ZL=250ohm,single-ended output

Page 11: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

μPC3217/18/19/21GVμμPC3217/18/19/21GVPC3217/18/19/21GVIF AGC Amplifier

Concept of Development•IF AGC Amp.+Video Amp.

Application•Digital CATV Receiver ,Cable Modem

Features•Low-Consumption:Icc 3217/18 =23mA

3219 =36.5mA3221 =33mA

•Operating Frequency Range :10 to 100MHz•MAX Gain / NF : 3217=53dB / 6.5dB

3218=63dB / 3.5dB3219=42.5dB / 9dB3221=60dB/4.2dB

•IM3:3217 / 18=50dBc@ Vout=0.7Vp-p/tone3219=58dBc@ Vout=0.7Vp-p/tone3221=56dBc@ Vout=0.7Vp-p/tone

In Mass ProductionIn Mass Production

BLOCK DIAGRAM

8 567

1 3 42IN1 VAGC

OUT1 GNDGND

Vcc

OUT2

IN2

PKG:8pin SSOP

Page 12: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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Out of Band Tuner Out of Band Tuner µµPC3220GRPC3220GRµµPC322PC3228T5S8T5S

Page 13: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

IF Low-Distortion Down Converter for Out-of-band Tuner

Concept of Development・1chip of IF converter block included video amp. ・ Low-Distortion , Small package(than µPC2798GR)

Application・Out-of-band Tuner

Features・:fin =30~250MHz、fIF =0.1~150MHz・Low-Distortion AGC Amp:IIP3 =+1.0dBm(@VAGC =0.5V)・Current Consumption:Icc=42mA@5V・AGC Gain Control Range :45.5dB(TYP)@VAGC =0.5~3V・16pin SSOP package

µPC3220GRµµPC3220GRPC3220GR

BLOCK DIAGRAM

16 15 14 13 12 11 10 9

1 2 3 4 5 6 7 8

In Mass ProductionIn Mass Production

Page 14: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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Out of Band Tuner New Product Information

Concept- Low distortion version of µPC3220GRApplication- TV / STB & Cable Modem for OOB tunerPerformance (@5.0V,ZS=50ohm)- ICC :85mA (typ)AGC+MIXER+DRIVER BLOCK- f(in):20~800MHz- CG:28dB(typ)- GCR:70dB(typ) - IM3 :47dBc(min)/57dBc(typ)@Output=0.7Vp-p- NF :8.3dB(typ)IF AMP BLOCK- Gain :59dB(typ)- f(in):20~100MHz- IM3 :45dB(min)/55dB(typ)@Output=110dBuV

32pin QFN PKG (Mold size:5.0×5.0×0.8mm)

In Mass ProductionIn Mass ProductionµPC3228T5S

AGC Control

RF_AGC AMP

Driver AMP

Driver AMPIF_ AMP2

Lo AMP

IF_IN AMP

25

26

28

27

29

30

32

31

16

15

13

14

12

11

9

10

24 23 22 21 20 19 18 17

1 2 3 4 5 6 7 8

Page 15: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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LNALNA for Tuner for Tuner

Page 16: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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DTV/STB LNA Development Roadmap

2008 2009 2010

NESG240034NESG220034NESG240033NESG220033NESG210833

UHS2HV(SiGe)

for 5.0VPower Supply

UHS2HV(SiGe)

UHS2HV(SiGe)

U/D: Under Development

U/P: Under Planning(This information is subject to change without notice.)

UHS2HV; Ultra High Speed 2nd generation High Voltage

for 3.3VPower Supply

NESG250134NESG260234NESG210719

In Mass production

NESG2101M05

NESG3XXX

UHS3 U/P

In Mass production

Low DistortionLow NoiseHigh ESD protection

In Mass production

Page 17: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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Recommendation line up for DTV/STB LNA

Test circuit

IN OUT

Vcc

Characteristic Example

ApplicationLNA for Tuner modulePre-Amp. for power splitter

TUNER1

TUNER2

The Performance varies by customer’s circuit diagram and bias conditions.Vcc Icc Gain NF IM3 IIP3 OIP3 Sales Point

(V) (mA) (dB) (dB) (dBc) (dBm) (dBm)

500MHz 500MHz Pin=-13dBm(tone)

NESG240033 5.0 47 11.4 3.3 68 21 32 Low Noise, Low Distortion

NESG220033 5.0 44 12.9 3.0 65 20 32 Low Noise, Low Distortion

NESG210833 5.0 43 14.6 2.7 60 17 31 High Gain, Low Noise, Low Distortion

NESG240034 5.0 45 8.4 4.1 73 24 32 Low Distortion

NESG220034 5.0 44 9.3 3.9 72 23 32 Low Distortion

2SC4093 5.0 29 12.5 3.3 53 14 27 Low Noise, Low Power Consumption

2SC3356 5.0 30 12.0 3.2 56 16 27 Low Noise, Low Power Consumption

2SC4226 5.0 29 11.9 3.3 56 15 27 Low Noise, Low Power Consumption

2SC3357 5.0 44 8.3 4.6 68 21 30 Low Distortion

NESG2101M05 3.3 48 15.2 3.0 57 16 32 High Gain, Low Noise, Low Distortion

 Frequency Bnad : f=100MHz~850MHz

 Test Condition (IM3,IIP3,OIP3) : f1=500MHz, f2=505MHz

NewProduct

Page 18: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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Part Number NESG240034 NESG240033 NESG220034NESG220034 NESG220033NESG220033 NESG210833NESG210833

Package3pin PoMM

SOT-89(4.5x2.5x1.5mmt)

3pin MMSOT-23

(2.9x1.5x1.25mmt)

3pin PoMMSOT-89

(4.5x2.5x1.5mmt)

3pin MMSOT-23

(2.9x1.5x1.25mmt)

3pin MMSOT-23

(2.9x1.5x1.25mmt)

Feature Low NFLow Distortion

Low NFLow Distortion

Low NFLow Distortion

Low NFLow Distortion

NESG210719High ESD ver.

VCEO (V) 5.5V 5.5V 5.5V 5.5V 5.5V

IC MAX (mA) 400 400 200 200 100NF (dB) 0.90 0.80 0.90 0.90 0.90Ga (dB) 11.0 12.0 12.0 13.5 14.5

OIP3(dBm) 35.5 35.5 35.0 35.0 31.0fT(GHz) 10.0 10.5 11.5 12.5 15.5

MSG(dB) 11.5 13.0 12.5 14.0 16.0|S21e|2(dB) 10.5 11.5 11.5 13.0 14.5ESD (MM)

(HBM)210V3.5KV

210V3.5KV

180V3.5KV

180V3.5KV

150V3.5KV

NF,Ga:@Vc=5V,Ic=40mA,f=1GHz,Zs=ZL=Γopt

fT,MSG,|S21e|2:@Vc=5V,Ic=30mA,f=1GHz

TV/STB LNA lineup

SOT-89 SOT-23 MM: Machine ModelHBM: Human Body Model

OIP3,fT,MSG,|S21e|2:@Vc=5V,Ic=40mA,f=1GHz

NF,Ga:@Vc=5V,Ic=30mA,f=1GHz,Zs=ZL=Γopt

NESG240034/240033/220034/220033

NESG210833

In Mass ProductionIn Mass Production

Page 19: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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NESG2400xx/NESG2200xx/NESG210833 NF/Ga vs Ic Characteristics, Package info.

0

0.5

1

1.5

2

1 10 100

IC(mA)

NF(d

B)

0

3

6

9

12

15

18

Ga(d

B)

NESG210833NESG210719

VCE=5V, f=1GHz,■

ZS=ZL=Γopt

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

1 10 100

IC(mA)

NF(d

B)

0

2

4

6

8

10

12

14

16

18

20

Ga(d

B)

NESG220034

NESG220033

VCE=5V, f=1GHz,■

ZS=Γopt、ZL=50Ω

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

1 10 100

IC(mA)

NF(d

B)

0

2

4

6

8

10

12

14

16

18

20

Ga(d

B)

NESG240034

NESG240033

VCE=5V, f=1GHz,■

ZS=Γopt、ZL=50Ω

1

2

3

Pin connection1.emitter2.base3.collector

NESG220034NESG240034

NESG220033NESG240033NESG210833

Unit:mm

NESG240033/34

NESG220033/34

NESG210833

Package info.

Page 20: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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LNALNA forfor TV/STB TV/STB application dataapplication data

NESG240033NESG240033 NESG220033NESG220033 NESG210833NESG210833

Page 21: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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LNA application test circuit

IN OUT

270nH

Feedback Resistance・NESG210833

430ohm・NESH220033

300ohm・NESG240033

220ohm

1.0Kohm

0.1uF

1.0Kohm 8.2ohm 22pF

10,000pF

0.1uF

0.1uF

0.1uF

Vb Vc

Rf

Page 22: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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Gain vs Frequency

TEST ConditionsIc=40mAVce=5.0V

Gain vs Freq  (5.0V,40mA)

-15

-10

-5

0

5

10

15

20

100 1000 10000

Freq(MHz)

Gai

n(dB

)

NESG210833

NESG220033

NESG240033

Page 23: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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NF vs Ic

TEST Conditionsf=500MHzVce=5.0VNF vs IC (500MHz,Vce=5.0V)

0

0.5

1

1.5

2

2.5

3

3.5

4

10 20 30 40 50 60 70

Ic(mA)

NF(d

B)

NESG210833

NESG220033

NESG240033

Page 24: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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IM2 vs Ic (Pin=-23dBm)

TEST Conditionsf1=200MHzf2=500MHzf1+f2=700MHzPin=-23dBm

IM2 vs IC (VCE=5.0V,Pin=-23dBm)

0

10

20

30

40

50

60

70

0 20 40 60 80 100

IC(mA)

IM2(d

Bc)

NESG210833

NESG220033

NESG240033

Page 25: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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IM2 vs IC (Pin=-13dBm)

TEST Conditionsf1=200MHzf2=500MHzf1+f2=700MHzPin=-13dBm

IM2 vs IC (VCE=5.0V,Pin=-13dBm)

0

10

20

30

40

50

60

0 20 40 60 80 100

IC(mA)

IM2(d

Bc)

NESG210833

NESG220033

NESG240033

Page 26: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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IM3 vs Ic (Pin=-13dBm)

TEST ConditionsVc=5.0Vf1=500MHzf2=505MHzPin=-13dBm/tone

IM3 vs IC (VCE=5.0V,Pin=-13dBm/tone)

0

10

20

30

40

50

60

70

80

0 20 40 60 80 100

IC(mA)

IM3(d

Bc)

NESG210833

NESG220033

NESG240033

Page 27: RF device for TV/STB application - Richardson RFPD...1 RF device for TV/STB application Oct., 2009 Compound Semiconductor Devices Division Discrete and IC Operations Unit NEC Electronics

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http://http://www.necel.comwww.necel.com/microwave//microwave/

NEC ElectronicsNEC Electronics

Microwave Devices Web SiteMicrowave Devices Web Site

AVAILABLE!AVAILABLE! -- Data Sheets in PDFData Sheets in PDF -- Device ParametersDevice Parameters

-- CAD DataCAD Data -- EvaluationEvaluation--Board InformationBoard Information