Reiner John Infineon Technologies AG, GermanyOvidiu Vermesan SINTEF, Norway

E3Car - Energy Efficient Electrical Car

E3Car Results

EUROPEAN NANOELECTRONICS FORUM 201115 - 16 November 2011

Dublin, Ireland

Copyright 2011Confidential

Association for European NanoElectronics ActivitieS

Outline

ENIAC E3Car Objectives / Key facts E3Car: Components for competitive EV´s Projects and European Funding Platforms E3Car: Vertical/Horizontal project management E3Car Highlights

ENIAC E3Car Objectives / Key facts

Key facts: 11 European countries 22 Demonstrators 33 Project partners 44 M€ Budget -> 3500 PM -> 147 reports

Objectives: Build a solid nanoelectronics technology base for Europe. Establish reference designs and platforms for electrical vehicles. Develop efficient semiconductor components for the first

industrial generation of electrical vehicles.

Target+ 35% efficiency

E3Car: Components for competitive EV´s

E3CARR&D

Pilot

Mass-Manufacturing

Funding

2 Mrd €

E3Car (44M€) 7 EV projects (180M€)

MARKET

2010 EC Industrial R&D Investment Scoreboard. Five of the top 10 R&D companies in the EU are German, each having substantial R&D-tosales ratios [Volkswagen (5.7%), Siemens (5.6%), Daimler (5.3%), Robert Bosch (9.4%),

Projects and European Funding Platforms

NationalClusters

IoE, POLLUXBatmanLIB2015

CASTOR, SmarTop

E3Car, MotorBrain

E3Car: Vertical/Horizontal project management

E3Car8 Work

Packages

28 SupplyChains

OEM, TIER1

driven

Inn

ovat

ion

s

22 Demonstrators

3 Electrical Vehicle Domains coveredEnergy Batteries, super capacitors, range extenders, energy harvesting, grid connections

Propulsion Power converters for motor-generators

Auxiliary Power supplies only

3500 PMs

Innovations in 4 Application areas

Power ConversionEfficiency

Temperature

Power ManagementMileage

Efficiency

Power DistributionEfficiency

TemperatureFlexibility

Dynamic MonitoringHarsh environment Sensors

FunctionalityEfficiency

Temperature

„Electrical understanding“

„Automotive understanding“

E3Car Highlights

Power conversion E3Car Inverter Roadmap Power conversion domain:

IGBT 400V Semiconductor Technology, IGBT 400 Module and Vehicle Class Micro Scalable Inverter

IGBT 650V Module and Vehicle Class A Scalable Inverter

Smart dynamic monitoring domain: Zero insertion loss current sensor

Power distribution domain: Solar panel integration

Power management domain: Starter battery

Battery management domain: Battery Management Systems matching world wide competition

1. Efficiency

2. Mileage

3. Temperature

4. Flexibility

5. Functionality

6. Harsh Environmentelectronics

6. Sensors

+9%

+15%

+3 - 5%, 10%

400V IGBT inverter650V IGBT inverter

Starter battery

Solar panel

Current-Sensor

Inte

grat

ion

Energy efficiency and range of operation

E3Car: Achievements in 4 Application areas

Build a solid nanoelectronics technology base for Europe. Establish standard designs and platforms for electrical vehicles. Develop efficient semiconductor components for the first industrial

generation of electrical vehicles.

Nanoelectronics Technology mapped to EV functional units

Match strenghts and limitations of

High Voltage (HV) technologiesHigh Voltage CMOS (< 700V)IGBT (400V, 650V, 1200V)BCD (Bipolar/CMOS/DMOS)SOI (Silicon on Insulator)SiC (Silicon Carbide)GaN (Gallium Nitride)Package technologiesfor high temperature devicesSubmicron lithography needed to combine complexlogic with high voltage driverdevices

E3Car: Match of HV technologies and EV

1. IGBT400V devices based on 2. 40mm thin technology

mCar Car Class A, B, C Truck, Bus

High Efficien

cy,

High Tempera

tureInverter

Efficien

cy + Cost

IGBT Tech

nologies

SiC

GaN

Wide Ban

d Gap

CEALeti ATLIII-V Lab

Inverter Basis SiCInfineon

Infineon Valeo Siemens

Inverter

VBT =400V 650V 1200V

Module

IGBT400

G2+

G2

G1

Inverter InverterInverter

PowerModul

GaN HEMT

GaN HEMT: Driver, Switch, Diode

>400V, 250°, switching

losses

1200V,270°,

150°

Automotivereliability

+9%

Module Valeo

Power technology

Powermodul + Driver + Control

Module

E3Car Inverter Roadmap: Power Conversion

E3Car: IGBT 400V Inverter

62%46%

65u -> 40u

1

1,5

2

2,5

3

3,5

4

1988 1990 1992 1994 1996 1998 2000 2002 2004 2006 2008 2010

VC

Es

at (

125°

C)

[V]

@ 7

5A

1st gen. 2nd gen. 3rd gen.

A = 1

A = 0,65

A = 0,44

4th gen.

A = 0,32?

A = 0,40

5th gen.

IGBT Modul Inverter

-15% size

T1

T2T3

T4

2.1

2.2

2.3

2.4

2.5

2.5

2.4

2.3

2.2

2.1

3.1

3.2

3.3

3.4

3.5

3.5

3.4

3.3

3.2

3.1

1.1

1.2 1.3 1.4

1.5 1.6

1.7 1.8

1.9 1.10

Pickup 40u Size, parasitics

Reduced switching losses -11,7%Reduced conduction losses - 10%reduced thickness and reduced size

Inverter

Costs, performance, power density improved

Eff.+9%

E3Car: 400V IGBT - 40mm thin wafer

E3Car Highlight: IGBT 650V inverter

IBGT Modul

Improved Size and Cost (IML)

Costs, performance, power density improved

650V IGBT & Diodes dice

IGBT3/Emcon3 from INFINEON

Trench + Field Stop Technology but with a dice thickness of 110µm (650V)

IML Package from VALEO

Compact solution

Thick copper traces for reduced conduction losses

Conduction losses reduction

Module

Mounting with springs for good thermal contact over life time

All functions in small volume

Real time IGBT junction temperature monitoring

IGBT State Of Health test at each power up

Eff. +2%@ full load

Inverter

low voltage medium volt. high volt.

Advance

d Sensor In

tegration

Efficiency

+ Cost

Driver IC

‘s

Task 1 & 2

&

Sensors

Task 7 SC20

ST

SC20

Sensor materials CNR

ATMEL AMS ST

Sensor integration

high integration medium integr. low integr.

SC11

G2

G1SC6

SC10SC17SC18SC21

SC19

E3Car Roadmap of Driver IC-Technologies

E3Car: Zero insertion loss current sensor

IBGTSize, parasitics

• High measured Fluxgate sensitivity (13V/T)• HIMC Sensitivity improvement 4x-10x, due to the

magnetic concentrator (measured) with respect to a single Hall cell

• Sensor linear range up to 2mT (measured) / 30A (expected)current

B

3mm B

BFeedback to the control system

Thin (~1um) integrated ferromagnetic material

• Low cost standard sputtering deposition

• Target magnetic properties obtained

Hall with Integrated Magnetic Concentrator (HIMC)/up to 30A

Fluxgate/up to 2A

Characterization vs. magnetic field DONE

NEXT STEP: current sensor demonstrator

Assumptions: No shade

shading footprint - 30%No curvature

Module curvature -16%Grid operation

The solution:

MPPT on cell level toincrease module efficiency

E3Car: Smart control Solar Panel Mileage increase with Solar

MAX driving range, 6m2 solar area

Graz, Austria 3419 km/yr

Madrid, Spain 4813 km/yr

Oslo, Norway 2469 km/yr

Interior

Isolated CAN

InputEMI-filter

Input inverse-polarity protection

JATAG interface

3,3V 1,2V

Output fuse

Xilinx FPGA

Oscillator

Output inverse-polarity protection

Output power measurement

Flash

SRAM

Output terminals

CAN terminals

Vin 3 to 10V

Input terminals

3 phase DC/DC converter

2 GaN Power Fets

Main inductance

5V 3,3V

Peripherals

ControllerDC/DC power stage

Power Supply

Phase 3

Phase 2

Phase 1

Phase 3

Phase 2

Phase 1

PWM

A1

A2

B1

B2

RshR1

R2

R3

CTRL

MXDRV

INDE

VOUT

GND solar controller chip

PML D

sup

M

solar module

Development of a near-series starter accumulator (Li-Ion) Operation strategies for complete system

Innovation and Optimization Conductor rails (weight - form - heat build-up) SOC/SOH algorithms Strategies for charging and charge balance Thermo management µElectronic devices, sensors

and power electronic Communication between accumulator

and automobile

E3Car: Li-Ion Starter battery

E3Car: Battery Management Systems

Bat

tery

bas

ed o

ne.g

2 m

odul

es (

bloc

k) e

ach

12 c

ells

ATMEL: The battery management device (Li-ion Battery Monitoring System Basic Chip) is realized on a MPW (Multi-Project Wafer).

AMS: First samples AS8505 available since January 2011, Samples produced on a Multi-Project-Wafer in the FAB in Unterpremstätten Package: QFN 36 pin, Device characterisation started at austriamicrosystems, Results expected until mid of February 2011, Demonstrator build started at FhG, Charactarisation done in Feb

ON Semi analog BMS Analog monitoring circuit, Fabout 15.April on time based on revised schedule. Reason change of concept based on finding requirement and specification refelcting market needs .partitioning, logic FPGA instead og hard coding in the chip. (Multichip approach) -> high flexibility, reprogrammability.

EVs - A Way of Life - A New Lifestyle

Enjoy Life!

Emissions -> Electrical vehicle vs. combustion vehicle:CO: -99%, HC: -97%, NOx: -92%, CO2: -50%

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