Quantum efficiency enhancement of CsI -TGEM/RETGEM -based RICH prototype

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Quantum efficiency enhancement of CsI- TGEM/RETGEM -based RICH prototype M. Adhikari, A. Di Mauro, P. Martinengo V. Peskov

description

Quantum efficiency enhancement of CsI -TGEM/RETGEM -based RICH prototype. M. Adhikari, A. Di Mauro, P. Martinengo V. Peskov. Earlier at RD-51 meetings we already presented some results obtained with large-area TGEM/RETGEM-based RICH prototypes. PC. Acquisition. Electronics. Pad plain - PowerPoint PPT Presentation

Transcript of Quantum efficiency enhancement of CsI -TGEM/RETGEM -based RICH prototype

Page 1: Quantum efficiency enhancement  of  CsI -TGEM/RETGEM -based RICH prototype

Quantum efficiency enhancement of CsI-TGEM/RETGEM -based RICH

prototypeM. Adhikari, A. Di Mauro, P. Martinengo

V. Peskov

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Earlier at RD-51 meetings we already presented some results

obtained with large-area TGEM/RETGEM-based RICH

prototypes

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Pad plain(each pad 8x8mm)

TGEMs

CsI

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Electronics

Beam particles

Cherenkovlight

C6F14 radiator

PC

Acquisition

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The top view of the RICH prototype (from the electronics side)

Feethroughts RETGEM supporting flame

Cherenkovring

TGEMs

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View from the back plane

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TGEM

100mm

Thickness: 0.45 mmHole d: 0.4 mmRims: 10 μmPitch: 0.8 mmActive area: 77%

TGEM is a hole-type gaseous multiplier based on standard printed circuit boards featuring a combination of mechanical drilling (by a CNC drilling machine) and etching techniques.

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Single events display

MIP

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Ne+10%CH4

(overlapping events, radiator thickness 10mm)

November 2010 beam test. Noise was removed offline

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Ne+10%CF4 (overlapping events, rad. thickness 15 mm)

May 2011 beam test. Raw data, no noise removal

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Four triple TGEMs together

After corrections on geometry and nonuniformity of the detector response the estimated mean total number of photoelectrons per event is about 10.2

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How much p.e one can expect in “ideal conditions”: full surface (without holes) and CH4 gas:Corrections: 0.9 (extraction)x0.75=0.68

10p.e/0.68~ 15pe

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What was achieved in the past with the CsI-MWPC (radiator 15mm)?

F. Piuz et al., NIM A433,1999, 178

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There are several possible ways to increase the efficiency of CsI-TGEM/TEGEM-based RICH detectors:

GasGeometry optimization

Double CsI (?)CsI QE enchantment (?)

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Gas

Potential for 5-7% improvement

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Optimization of TGEM/RETGEMgeometry

Calculations on the way by R.Veenhof+UNAM students. Not ready yet, but probably another 5-7%?

Geometry optimization

G. Hamar et al., NIM A694(2012)16

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Double CsI with misaligned holes?

TGEMs

CsI

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Schematics of measurements

3 mmgaps

pAVoltages

10 mm

Drift mesh

RETGEMs

UV

V

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Test chamber

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The effect, of exists, is inside the errors

Gas Ne+10%CH4.Extraction fields 200-250v(not very sensitive to exact value).Across the GEM in collection mode:250-300V to make it transparent for photoelectrons

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Low photocurrent measurements. Light at 90°

Zoom

TGEM1t

TGEM1t+TGEN2t

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High photocurrent (to increase the sensitivity)

Is this an effect or systematic?

TGEM1t

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Light at 45°

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The effect partially disappear?

No conclusions, except that effect, if exist, is not easy to catch withthis method.Moreover, in the case of RICH one have to deal with inclined UV beams..

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Adsorbed layer

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Enhancement with adsorbed layer

Important note:TMAE vapors were introduced, butnot in a flushed mode

D. Anderson et al., NIM A323 (1992) 626

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Similar effect was observed with EF

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For studies a simplified RICH prototype containing one triple

TGEM/RETGEM was used

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40mm

4 mm CaF2 window

3mm

3mm

4.5mm

Drift gap 10mm

R/O pads 8x8 mm2

Front end electronics (Gassiplex + ALICE HMPID R/O + DATE + AMORE)

CsI layerDrift mesh

Ne/CH4 90/10

Pulsed UV lamp

Ar

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Photograph

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Do not use Hg lamp!

D2 lamp spectrum

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Direct From Ortec142pc

After shaper

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Room temperature (~30°), continuous flushing

Inject EF Close EF, but keep flushing the gas

Flushing without EF(recovering)

When corrected on adsorption effect is almost 40%

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Inject EF and sealed when the signal was close to maximum

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Tests with sealed gas chamber

Ist day 2d day

QE enhansement (after correction) is about 50%

Preliminary

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Cross –check with heating: CsI QE should drop, EF signal should increase

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Elevated temperatures (60°C)

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Signal is 50 times less for EF compared to CsI,Which well fit expectations

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Cross-checks with othe detectors

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Signal 1.3 V which corresponds the expected QE of the CsI

TMAE filled detector

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Potentials:

Gas optimization-5%Geometry- probably 5 %Double CsI??? (more studies are needed)Absorbed layer 20-30% (a 50% after corrections). Not clear how to handle.More efforts should be done

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Can this enhancement be applied to the CsI-MWPC?

Should be carefully considered for each particular case: feedback, contribution from the volume ionization, aging?

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Conclusions:

• Some very preliminary measurements indicate that adding EF vapors increase CsI QE• However one should find a way of stabilize the enhancement, because CsI act as a getter• Some stability can be achieved with a sealed detector, however the gas gain changes with time• More work is needed to master this effect in flush mode• In the case of the success the efficiency of CsI-TGEM/TRETGEM may approach that of CsI-MWPC

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Back up slides

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Our proximity focusing TGEM-based RICH prototype installed at CERN T10 beam test facility(mostly ~6 GeV/c pions)

Scintillators

Scintillators

Liquid radiator

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Electronics side

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Gain degradation in a seled detector

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