POLYTRONICS Multifunctional Heterosystemintegration
Transcript of POLYTRONICS Multifunctional Heterosystemintegration
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POLYTRONICSMultifunctional Heterosystemintegration
Karlheinz Bock, November 27th, 2012 at the University POLITEHNICA of Bucharest, RomaniaEmail: [email protected] and [email protected]
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Polytronic Systems
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R&D Topics for Polytronic Systems
Reel-to-Reel Application Center
MEMS technology
Wafer thinning
Ultra Thin Chip Assembly
Organic Electronics
Electronics,chemical and biosensors
Substrate Handling
Smart Plastics Analysis and testing of integrated Systems
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Agenda
4
Introduction to Polytronics and Heterosystemintegration
Acknowledgements
Why modular technology integration
Integration technologies for flexible foil systems
Homogeneous integration HF lines, passives, OFET, CMOS
2D& 3D Heterointegration of (not only foil) components
Summary and future work
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Hetero-System Integration of Peripherics with Electronics in an OLAE substrate
Organic displayshuman interface
Si electronics forhigh functionality
polymerelectroniclow cost, large area
polymer solar cells,batteriesenergy
sensorspassive
s
Interconnect actuator
Human Ambient Intelligence
Fluidics &Pneumatics Biosystemintegration lab-on a foil
Smart Plastic
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Polytronic Systems
Micro-
system-
technologies
Silicon technology3D-Integration
Modular On-Top Technologies MOTT
Bio-
system
integration
Radiation detectors3D-Silicon
Integration
Chemical andbiological
Materials andSensors
Flexible multi-funcional patient
wrist-strap
Smart lab on chip, disposable
sensors
Bio- implantablecomponents
Fraunhofer EMFT Mission: Modular System Integration
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Fraunhofer EMFT – Polytronics Area of research
7
Bavarian Polytronics Demonstration Center in Munich - funded 2001Focus on Polytronic , FOLAE and Multi-functional Systems (sheet and R2R)
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Bavarian Demonstration Center Polytronics (funded2001) at Fraunhofer EMFTroll-to-roll and sheet-to-sheet enabled pilot line for microfabrication on flexible substrates
Fine-line patterning ofmetallized plastic films
Thick-film screen printing on sheets and rolls (ink-Jet, μ-contact, NIL, micro-dispense, nano-spot…
Electrical testingLaser processingFoil laminationFoil assembly
Sputter depo. Web coating
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Roll-to-Roll Fabricated Devices on Plastic Films
temperatureelectrochemical
RFId antennaePolymer electronics
EL signageultra thin ICs fabrication handling and assembly
capacitive sensor
High resolution wiring Printed passives
through-hole vias(arrow = 50μm)
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Plastic Film Systems at BDP Center
have been demonstrated for• high resolution wirings, 3D foil assembly• radio frequency, antennas and wave guides• sensor and components• organic electronic applications
Foldable wiringand 3D
Foil electronics andcomponents assembly
Printed photo detector and sensors for bacterias, viruses, toxines, gases, environmental conditions…
Organic circuits
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Acknowledgements and Thank You
All co-workers and colleagues at TU Berlin, Fraunhofer EMFTFraunhofer IZM and other Fraunhofer institutions, all cooperatingresearchers and friends in other institutions all over the world,…only because of their continued cooperation, contribution andsupport this event could happen.
Bavarian State Government STMWVT MunichGerman Ministry of Education and Research BMBFEuropean Commission FP5, FP6, FP7Fraunhofer Society…for continued funding from 2001 until present in many projects.Their funded projects are the frame of our research and thedriving force over the years enabling this event could happen.
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Modular system integration on flexible film substrates
Advantages:
enables chip integration on films
thin film wiring offers high performance signal transmissionin the high GHz range
enables integration of passive elements
multi-functional elements can beintegrated in a modular concept
allows for mechanical flexibility
allows for roll-to-roll manufacture
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Components building a flexible foil system
one or more wiring layers several foil components (sensors, batteries, photovoltaic modules) integrated circuits (e. g. Si-IC) passives (resistors, capacitors, antenna)
Integration Technologies
flexible foil system
Homogeneous Integration Heterogeneous IntegrationThe foil component is fabricated within the technology process for preparing the wiring layer.
The pre-fabricated functional foil component is subsequently assembled on the wiring layer.
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Double Sided Wiring Layer with Blind-hole vias
Cu tracks
Cu metallisation
alignment hole
via hole
photoresist
foil with interconnect wires on top
laser drilling of alignment holes (through-hole) and via holes (blind hole; stop on metallisation)
sputtering of backside metallisation
1. lamination of photoresist2. exposure relative to alignment holes3. development of resist
pattern electroplating
1. resist stripping2. Cu-etching metalized via hole
double sided wiring layer
Homogeneous Integration
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Front to Rear Side Interconnections (filling by Cu e-plating)
measurement of via resistance (4-point):yield: 98.3% mean resistance 9.6mOhm
0
10
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1 3 5 7 9 11 13 15 17 19 21 23
R [mOhm]
coun
t
Via Size polyimide film 50 µmbottom Ø ≈ 15µmtop Ø: ≈ 85µm
Homogeneous Integration
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Double Side Wiring in a Roll-to-Roll Process DIL-FlexFlexible RF Transmission Lines on Foilimpedance and dispersion optimized
polyimide film
rear side electroplating
blind via formation: laser and plasma etching
front side electroplating
substrate: PI 50 μmmetallization: Cu, 5 μm
min. linewidth: 10 μmvia size: 50 μmalignmentfront to rear: ± 25 μm
bandwidth(-3 db, 40 mm): 40 GHz
Process flow
Homogeneous Integration
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Schichtdickenprofil: PI/LCP Substrat
PI/LCP: vergleichbare Rauigkeit
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length pos/µm
heig
ht/µ
m
LCP
PI
Scanrichtung
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Copper conductor on PI substrate
Cross section detail: semi-additive copper conductor path
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Comparison EMFT/Commercial GCPW (L = 40 mm)
3 dB Bandwidth: Commercial 10 GHz / EMFT 40 GHz EMFT: lower Edge-/Substrate-roughness
Backside fully metallized-12
-10
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Frequency / GHz
Mag
nitu
de /
dBS21 (PI Substrate)
Semi-Additive
Commercial Subtractive Technology
GCPW-LineL = 40 mmW = 100 μm(G = 60 μm)
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5.0
5.1
5.2
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Frequency / GHz
grou
p de
lay
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m
0123456789
skin
dep
th /µ
m
Skin Effekt Ursache für unterschiedliches Verhalten unter 20 GHz Leiterbahnhöhe: 13 - 14 μm Commercial; 7 – 8 μm EMFT
EMFTCommercial
Vergleich Group Delay g Commercial/EMFT
calculated skin depth
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Example: Printed passives on foil
Screen printed carbon resistors Printed plate capacitorson foilStructure: Cu/Dielectrics/Carbon
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Example: Printed Carbon Paste Resistors
Test structures performance measured:
15 x 3 mm; 200 mesh; Carbon paste
resistance: 743 Ω ± 6,3%Area resistance:101,4 Ω/sqr (100 Ω/sqr*)
Interflex Demonstrator: 27 different R values between 100 Ω and 10 MΩ
fabricated and characterized required accuracy for system ± 5% Integrated directly on the systems foil
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0,67 0,7 0,73 0,76 0,79 0,82 undgrößer
qu
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Resistance [kOhm]
Fabricated with two screen printing steps
* Supplier data for the paste
Distribution of R-values of 69 screen printed test structures
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Project example: EC-Project COSMIC
The COSMIC concept is to enable an organic mainstream technology by:
Develop an Organic “CMOS” Technology Platform
Establish robust and reproducible full-printing process flows
Library of Digital and Analogue Building Blocks
Demonstrate the strength of organic CMOS platform on four lead applications A/D converter, Silent Tag, Display line driver
Homogeneous Integration
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EMFT – R2R Process Integration for CMOS (COSMIC)
wiringantenna diode capacitor p-oTFT n-oTFT resistor
p-semiconductorn-semiconductorprinted carbon
metalprinted carbondielectric
Integration of different components in one material system with mixed processingmetal printed/carbon
Strong support for the low cost application area
Homogeneous Integration
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High Mobility p-Channel oTFTs mit Carbon-SD in R2R
Printed Carbon Source/Drain-electrodes and TIPS-Pentacenebased OSC formulation/blending
Bottom Gate/TopContact - Structure Imroved Transistor-Performance
Factor 10
µ [cm²/(Vs)] 0,34 ±0,09
Uth [V] -2,4 ±0,5
On/Off 8500
IGate @ 0V [nA] ~1
Homogeneous Integration
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Key Issue: Highly Precise Web-Coating With Sub-μm Layers
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-10 -5 0 5 10
Thic
knes
s(d
ry) [
nm]
Position TD [cm]
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650
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-10 -5 0 5 10
Thic
knes
s(d
ry) [
nm]
Position TD [cm]
554 nm ± 69nm (3σ) 52,3 nm ± 5,6 nm (3σ)
Uniform deposition of gatedielectrics for oTFTs
Resist coating for R2R-photolithography with CD below 15 μm
Homogeneous Integration
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MEMS und Plastik-MEMS
Route1: Plastic Film ProcessingReel-to-Reel Technology
Route2: Silicon Wafer Processing
MEMS Technology
Example: Combination of MEMS Wafer and Foil Processes
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Combination of MEMS and Foil Processes on electrostatic carrier substrates
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Technology: Thin film Au metallisation on polyimide substrate for sensors application
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Application in bio-systems integration:
Cognitive bio-chips, bio-analytics and bio-sensors
diagnosing deep vein thrombosis – fabrication and assembly of lab-on-chip systems –integration of conventional components and roll-to-roll processing
Example: Deep-Vene Thrombosis- EU DVTimp
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Project EU DVT-Imp Plastic-Lab-on-Chip in R2R
Reader‘Smart’ Software, electronics and wireless device
Micro Fluid Array
Analysis
Cartridge
EU project DVT-IMPwww.diagnosingdvt.com
Sensor principle:• Impedimetric immunoassay for detection
of biomolecules• Cartridge concept with integrated
immunorecation zone
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Outview: Smart Materials - Non-OSC functions in foil systems
Application of color changing sensor layers
Colour changing package gives warning signal to the consumer
Sensor module for monitoring trade and transport
Integrated system for full time monitoring and data storage
PolyOpto
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Printing sensor dyes> Printing of sensor dyes directly to reactive materials
(e.g. cotton textiles, paper)
Homogeneous Integration
> Structures via masque technology
and coatable/printable in R2R
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2D Integration of Functional foils
Approach is to built component loaded layers using two wiring layers on one large area foil
Heterogeneous Integration
3D integration of large foil components on a wiring layer
2D integration of (foil) components on a wiring layer
Heterogeneous Integration
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Sensor Foil
Double-sided Adhesive FoilOTFT
EL Element
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POLYOPTO Device setup
PEN Foil
ITO
PHS
EL Paste
Ag SP
ITOPHSTIPS
Carbon SP
Cross-sectional view
Laser cut holeGas
Gas
Top view
Cross-sectional view after folding process
Magnified top view showing laser hole
see SPIE Symposium San Diego, August 2012
Heterogeneous Integration
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Structure of the color changing sensor material
Receptor(Selectivity / Sensitivity / Reversibility)
Linker(solvability / Immobilisation)
NN
O
O
R1R2
ImmobilisiationDetection reaction
Chromophor(Signalchange)
Information
pH, T, P…Ions
GasesSaccharidesNukleotidesToxines…
Homogeneous Integration
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Principle of operation
The sensor foil acts as a filter in between the EL light source and the OTFT.
The colouration of the foil changes to darker shades of blue according to the intensity ofthe amines present in the atmosphere.
Different peak levels correlate to creation of optically generated carriers in the channelleading to an identifiable sensor response to the different amine levels.
see SPIE Symposium San Diego, August 2012
Heterogeneous Integration
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Selection of materials
see SPIE Symposium San Diego, August 2012
Control the crystallization of TIPS-Pentacene with a two-solvent μ-dispensing process.
Adapt the source-drain structures to be circular to benefit from the crystallization process.
Limit the variation in the OTFT currents to be an order below the sensor's current responseto the different amine concentration levels as trade-off to mobility by adjusting the binderconcentration levels.
Heterogeneous Integration
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Circular OFET– Source-drain pattering
Source-drain contacts using evaporated gold via a shadow mask and screen printed carbon paste.
see SPIE Symposium San Diego, August 2012
Heterogeneous Integration
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Example: RF-Application – Sensor Label (COSMIC Project Demonstrator)
Organic Diode Oscillator Load transistor
Capacitor
Resistor
Heterogeneous Integration
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Ultra-thin silicon devices open the door to ...
„vertical“devices
flexible electronics
3d stacked devices
very thin packages
Akita Elpida Memory
efficient power devices and thinner solar cells
Infineon
Polytronic SystemsFraunhofer EMFT
3d-integration Fraunhofer EMFT
self-assembly
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Examples: Thin silicon devices in Polytronic SystemsExample: RF data transmission module on film substrates
SMD type passive components, thickness 1-2 mm
25 μm thin silicon transceiver chip, laminated below polyimide film cover
Thin film copperwiring (roll-to-roll processing) on PI film
Development tasks:
• Homogeneous integration of thin passives (replace SMD components)
• Thin dies should be delivered in a robust thin chip foil package
Heterogeneous Integration
EC FP7 Interflex, design by ST-I, passives and quartz assembly by Bosch
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surface programmingtechniques of substrates, both silicon and foils –
shown here by selfalignement, self-contacted, fullyfunctionable LEDs on silicon
Outview: Autonomous motion and self-alignment of thin dies on surface programmed substrates
surface tension of liquids isstrong enough to move andalign thin silicon dies and otherthin components in an autonomous manner on anysubstrate including foils
ECTC 2008, see also ESTC 2012, Amsterdam, September 2012
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Accuracy for self-alignment of plasma diced 50 μm thindies on Si-wafer substrates of < 1μm this process istransferable to foil!
surface tension forces of liquids enable directed movement of thin silicon chips
For wafer level assembly
self-alignment accuracy in the range of <1 μm
programming of specific substrate wettability by fluorine plasma
overlay of top and bottom fiducials after self-alignment (IR microscope)
ESTC 2012, Amsterdam, September 2012
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3D-Integration technology = foil stacking
Approach is to stack at least two sheets of component loaded wiring layers or large area foil components and interconnect them mechanical and electrical to build a multilayer flexible foil system.
Heterogeneous Integration
3D integration of large foil components on a wiring layer
2D integration of small (foil) components on a wiring layer
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copper wiring on PI foil(500 nm sputtered Cu)
Types of wiring layers produced on foil substrates
silver coated copper wiring on PI foil(5 μm electroplated Cu)
printed thick-film silver wiring with printed carbon based resistors
foil substrates: PI, PEN, PET process technique: combinations of lithographic thin film, thick-film screen printing equipment: roll to roll production line between a minimum of such two wiring layers and a via process all different
devices/functions can be integrated for a multi-functional system (interconnects, passives, OFET, sensing layers and sensors, Actuators, fluidic devices (filter, pumps…), optical devices (display, optical detector, illumination…) …
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Enabling Step: Laser drilling of via holes
Laser micromachining at Fraunhofer EMFT
500 μm through-hole via in a copper metalized PI foil (laminating adhesive film on PI backside)
after plasma cleaning: smoke is removed; adhesive film splash remain largely unaffected
frequency tripled solid-state-laser = 355 nm optical power = 5 W 50 via/minute (at 500 μm) 1 000 via/minute (at 50 μm)
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Project example: FP7-ICT STREP INTERFLEX 2010-2013Question: How to increase performance in flexible electronics?
Solution: Integration?
Prerequisites: Reliable assembly and interconnection technologies
Targets the development of reliable assembly and interconnection technologies for a flexible foil system.
www.project-interflex.eu
2009 Heterointegrated Circuitry on a flexible partially printed wiring layerTransceiver and wireless sensor for customer inertial sensor system
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3D integration of two wiring (foil)layers (WL)
cutting of top WL and bottom WL to size
lamination of adhesive film on backside of top WL
laser cutting of via holes through metal, foil, adhesive film and protection liner
metallization foils adhesive film liner
aligned lamination of top WL on bottom WL
Top foil
Bottom foil
conductive material
via filling by dispensing conductive material
1.)
2.)
3.)
4.)
5.)
3D Heterogeneous Integration
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Via-fill process for electrical foil to foil interconnections
1.) adhesive film lamination2.) via hole drilling 3.) pick&laminate
two layer foil laminate with foil to foil interconnections
via fill
Method:
needle dispenser
via diameter: 500 μm
via depth: 70 μm
filled via hole
by dispensing
foil to foil daisy chain for evaluation of via fill process
Result:
20 – 40 Ω per daisy chain with 36 via holes
3D Heterogeneous Integration
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Enabling Step: Pick&Laminate approach for large area
Preparation of WL top with backside PSA film and via holes.
Placing WL bottom on vacuum chuck.
Pick WL top with foil chuck equipped with an adhesion foil.
Alignment of WL top and WL bottom by moving the foil chuck.
Lower foil chuck:WL top < air gap < WL bottom.
Place roller on foil chuck; press WL top on WL bottom.
Roller lamination.
Remove foil chuck.
Process steps
3D Heterogeneous Integration
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Pick&Laminate tool
video camera
wafer frame
vacuum plateadjustable in x, y, direction
magnetic holder adjustment screw
vacuum switch
3DHeterogeneous Integration
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Alignment accuracy with the pick&laminate tool
misalignment in x and y-direction: better than 100 μm, possibly to be improved to less than 40μm
Determination:
Result:
Aligned lamination of 2 WLs with identical copper pattern
determination of shift between top to bottom WL in x-and y-direction at 6 positions.
calculation of mean value and standard deviation
3D Heterogeneous Integration
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T-peel test to determine bond strength of foil laminates
Working principle:measure the force to pull apart two foil stripes at constant speed
3D Heterogeneous Integration
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Reliability studies on bending stress: bending machine and test
A clamped foil is moved back and forth over a roller at a 90O angle. During one cycle the foil passes the roller two times and is stressed twice.
foil
laminated foilcomponent
3D Heterogeneous Integration
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Reliability characteristics of interfoil vias under bending stress
Daisy chain with 36 vias
bending diameter: 100 mm – 10 mm
number of cycles: 10, 100
electrical character-isation after each test
at 10 mm diameter bending stress starts damaging interconnections
a total black-out is not observed even after 100 cycles
Results:
20
25
30
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initial
d=10
0mm; n
=10
d=10
0mm; n
=100
d=50
mm; n=10
d=50
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0d=
25mm; n
=10d=
25mm; n
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d=10
mm; n=10
d=10
mm; n=10
0
Res
ista
nce
[Ω)]
Daisy Chain 1 Daisy Chain 2 Daisy Chain 3
3D Heterogeneous Integration
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Example: Double side wiring and 3D integrationEU Project INTERFLEX: Demonstration of 3d-assembled multi-functional foil components
front side elements: photovoltaic modules window opening for sensors (temp., hum., dew,
CO2) thinned silicon devices (micro controllers)
rear side elements: batteries RF antenna wiring
sheet size: 20 x 20 cm2
3D Heterogeneous Integration
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Summary EU Interflex 3D foil integration will increase the performance in flexible electronics.
In the EU-funded project Interflex a 3D integration concept for the fabrication of flexible foil system is developed and studied in details.
The developed 3D integration technology will be demonstrated by realising an energy autonomous, indoor air quality sensing system capable of wireless communication of the measured data as flexible foil system. Battery
StandardisedInterfaces
Lamination
Power management
Antenna
SensorsT
R.H.
CO2
DewµC
Tx
IC
ICWiring layer
Energy
Sensing
Communication
Photo-voltaics
Battery
StandardisedInterfaces
Lamination
Power management
Antenna
SensorsT
R.H.
CO2
DewµC
Tx
IC
ICWiring layer
Energy
Sensing
Communication
Photo-voltaics
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Thermogenerators from Chains with 2200 vias: failure of via < 10ppm
Outview: Project OTEPS –Thermogenerator in foilDurchkontaktierungsprozessMultilayer foil through connectby screen print
R2R-Plasma etch for through foil via
Pat. pend. and to be published
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Outview: Bio-Sensors:„Intelligent micro filter“: working principle
+ -
-+
Layer 1: finger type electrodes at inlet
Layer 2: Filter membrane
Layer 3: finger type electrodes at outlet
1 2
3
see also EUROSENSORS, September 2012
Heterogeneous Integration
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Outview: Sensor filter: preparation of micro electrodeson polyimide film
Perforation betweenelectrodes: diameter > 30 μm
see also EUROSENSORS, September 2012
Heterogeneous Integration
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Outview: Implantable Biosensor Project EU P.Cezanne –
Aim: Glucose measurement for Diabetes patients. Implantable works with Calcium. The silicon-based Hydrogel optical wave guide FRET sensor, recently is also detecting Glucosis directly
21mm x 69mm
CFP
GBPfluo1
YFPGBP
T. Förster, C. Strohhöfer, K. Bock, et. al., "Biosensor for calcium based on a hydrogel optical waveguide with integrated sensor proteins“, Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009.
© Fraunhofer
Outview: Bio Sensor demonstrator
Demonstrator measures without extern Spectrometer FRET.
T. Förster, C. Strohhöfer, K. Bock, et. al., "Biosensor for calcium based on a hydrogel optical waveguide with integrated sensorproteins“, Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009.
© Fraunhofer
Bio-Sensorproteines and FRET
Th. Förster, "Zwischenmolekulare Energiewanderung und Fluoreszenz", Annalen der Physik, vol. 437, no. 1-2, pp. 55–75.
CFP
GBPfluo1
YFP
GBP
YFP: yellow fluorescent protein. CFP: cyan fluorescent protein. FRET: fluorescence resonance energy transfer.
© Fraunhofer
Hetero-Integration von FoliensystemenOutview: Heterointegration of Bio-Systems in a Foil
Wireless Patient Wrist StrepPrinted EL display, passive elements andfoil bio-sensors Combined with thin ACA assembled Si chips and soldered SMD‘s for ICs R2R compatible fabrication process
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Functional (device) Heterointegration
Materials & Process &EquipmentChallenge
Hybride Approach
Open evolution of materials, processes,
design and architectures “Cross-
Science”
• Improve Materials by
• A Joint Development of Materials & Processes
• Because: Different functional device blocks will have
to be realized on different (the most appropriate)
process and substrate levels
• Together with the right equipment
© Fraunhofer
SummarySmart Materials & Process Integration RequirementsAdditive structurization, Smart Processing, Advanced Functions
Additive patterning i.e. embossing, (contact, micro,…)-printing
Surface-Energy „Addressable“ (hydrophilic, hydrophobic...)
Self Assembling (i.e. self assembling monolayers)
Micro phase separating material mix (i.e. block co-polymers)
Processability on different (wafer, PCB and foil)- substrates
Process Compatibility with different device technology Materials & Processes
UV curable (non-thermal for low-cost substrates)
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Conclusion: Modular Solid State Technologies Materials and Processes co-integrated are the key for interfacingdevice technologies and systems integration technologies
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IDTECHEX Forecasts for OLAE Polytronics
The leading market research company IDTechEx forecasts a
market size by 2027 of US$ 330 Billion for the sector as a whole, a volume comparable to that of the traditional CMOS based electronics sector of 2009 in terms of size importance.
It is expected that the size of logic and memory devices will grow disproportionally and will by 2027 constitute a market volume of US$ 115 Billion-
© Fraunhofer
OLAE Market Polytronic Systems
The worldwide sales of organic and printed electronics is expected to grow to almost60 billion US$ by 2019. (Data: WSTS, DisplaySearch, SIA von Custer, NanoMarkets, IDTechEx;Graph OE-A , 2009).flat-panel displays based on organic light-emitting diodes (OLED) will achieve a global marketsize of approx. € 1.4 Bn by 2015 (Source: DisplaySearch, 2009). The equivalent global market size forOLED lighting is to reach € 4 Bn by 2015 (Source: Photonics21, WG4, 2009).
© Fraunhofer
BaselineCMOS Memory
Sense, Interact,Power
RFHV
Power PassivesSensors,Actuators
Bio,Fluidics
Compute/Storage
‘Moore’s law’ ‘More than Moore’
Heterogeneous IntegrationSystem in package
Digital contentComplex Design (SoC)
Non-digital contentLots of processes
Polytronics
Scope and functionality (EPOSS) and Polytronics (OLAE)
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Cos
t / fu
nctio
n
System complexity
System Integration Platforms (EPOSS)
SOC
MEMS
Bio-Interface
Hetero SystemIntegration
Power supply
PolytronicsRFID & Smart Objects
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Millenium Packaging Challenge 2002/3 !
...Cubic Integration, E-grain,
e-cubes,Polytronics , R2R, Nanomaterials , Nanotechnologies ...Bottom-up Self-assembly ...
„System-drivenPackaging Wave“
Through-Hole Wave
1970 1980 1990 2000 2010
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100
1000
Sys
tem
Vol
ume
a.u
Surface-Mount Wave
Area-Array Wave
10E4
1
2020
Packaging Gap
10E5
10E6
HDI Wave
© Fraunhofer
Products: ‘Ambient Intelligence’ - “Small Tech” Symbiosis
Satellite
Global
Suburban Urban In- Building
Pico-Cell
Micro-Cell
Macro-Cell Home-Cell
Seamless & Rich Connectivity
Intelligent Environments
Human Interfaces
© Fraunhofer
...Cubic Integration, E-grain,
e-cubes,Polytronics , R2R, Nanomaterials , Nanotechnologies ...Bottom-up Self-assembly ...
„Modular Solid StateTechnologiesWave“
TVs
1970 1980 1990 2000 2010
10
100
1000
Sys
tem
Vol
ume
a.u
mobiles
Computer
10E4
1
2020
10E5
10E6
Millenium Technology Challenge 2012-25 !
Internet of Things?
Internet ofHumans andEnvironment
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Conclusions 3D Hetero system Integration for foils could open towards an OEM
platform for multi-functional (open form factor) flexible systems bridging the gap to flexible board technologies and paving the way for flexible organic (OSC-based) and large area electronics (FOLAE)
Cost may be reduced for 3D hetero-integration compared to homogeneous multi-functional integration
Products are probably sooner compared to complex homogeneous integrated foil systems, examples: foil chip packages, integrated foil based passives , interconnects and transmission lines in foils, foil sensors,smart objects
Organic semiconductors are not a basic requirement for 3D hetero-integrated foil systems, but, can be an important option
3D foil integration will increase the performance in flexible electronics. Even Highest Performance might be reached by 3D hetero integrated foil systems
Foils does not mean only flexible systems (handling, surface, power, cooling, transparent, conformable)
© Fraunhofer
[email protected]@emft.fraunhofer.de
Karlheinz Bock 1),2),
1) University of Berlin, Gustav-Meyer Allee 25, 13355 Berlin, [email protected]
2) Fraunhofer Institution for Modular Solid State Technologies (EMFT), Hansastr. 27d, D-80686 Munich, Germany, email: [email protected]