Photodetectors Lecturer: Mauro Mosca ( University of Palermo –DEIM A.A. 2014-15.
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Transcript of Photodetectors Lecturer: Mauro Mosca ( University of Palermo –DEIM A.A. 2014-15.
![Page 1: Photodetectors Lecturer: Mauro Mosca ( University of Palermo –DEIM A.A. 2014-15.](https://reader035.fdocuments.net/reader035/viewer/2022062423/56649c815503460f949392ef/html5/thumbnails/1.jpg)
PhotodetectorsPhotodetectors
Lecturer: Mauro MoscaLecturer: Mauro Mosca
(www.dieet.unipa.it/tfl)(www.dieet.unipa.it/tfl)
University of Palermo –DEIM
A.A. 2014-15A.A. 2014-15
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PhotodetectorPhotodetector
ThermalThermal ThermoelectricThermoelectric BolometersBolometers PyroelectricPyroelectric
PhotonicPhotonic PhotomultipliersPhotomultipliers PhotoconductorsPhotoconductors PhotovoltaicsPhotovoltaics
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Thermoelectric detectorsThermoelectric detectors
- Principle of thermocouples
large electricalconductivities
thermopile
minimize Jouleheating effects
small thermalconductivities
minimize heatconduction losses
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BolometersBolometers
current flowing SMALL Why?...current must notraise temperaturetoo much
Pt ~ Ni =
= 0.005 K-1
Sensingelement
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Pyroelectric detectorsPyroelectric detectors
ferromagnetic material
molecules with a permanent electrical dipole
- lead zirconate- lithium tantalate
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Dispositivi emissivi: catodiDispositivi emissivi: catodi
# emitted electron
# absorbed photons= quantum yield
lowest value for e : Caesium (2.1 eV)
NaKCsSb (S20)
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Negative Electron Affinity (NEA)Negative Electron Affinity (NEA)
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PhotomultipliersPhotomultipliers
Dynodes (~ 100 V)
+
++
+++
++++
++++++++++++
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Photoconductive detectorsPhotoconductive detectors
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VBB
RPC
Photoconductive detectors: Photoconductive detectors: application circuitsapplication circuits
se si è interessatisolo alle variazionidi intensità radiante
PCL
LBBO RR
RVV
lumP
lumL
LBBO
P
kR
RVV
lumLPCL P
kRRR Se
lumLBB P
k
RV
segnale d’uscita piccolo! (RL piccola)
lumLPCL P
kRRR Se
BBV
scarsa sensibilità! (RPC piccola)
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Photoconductive detectors : Photoconductive detectors : application circuitsapplication circuits
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Photoconductive detectors : Photoconductive detectors : application circuitsapplication circuits
The most common method used to extract thesignal is to modulate the incident radiation at a specific frequency by placing a mechanical chopper in front of the sensor or by electrically modulating the radiation source
?????????????????????????????
either
The signal due to radiation is now an AC signal while the dark current is a DC signal.The AC signal can be separated from the DC background signal using an AC amplifier
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Photoconductive detectors: gainPhotoconductive detectors: gainI0
x
=
=
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Photoconductive detectors: gainPhotoconductive detectors: gainI0
x
photoconductive gain G = ratio of the rate of flow of electrons per secondto the rate of generation of e--h+ pairs within thedevice
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Photoconductive detectors: gainPhotoconductive detectors: gain
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Photoconductive detectors: gainPhotoconductive detectors: gain
Se consideriamo che:
Ev he )( L
Vhe )(
v
Lt tr
tr
c
tG
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Photoconductive detectors: Photoconductive detectors: responseresponse
rgtr
c
tG
WDLreGi g WDLDh
IeG
0
tr
c
th
Pe
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Fotoresistors (LDR)Fotoresistors (LDR)
Large surface
Close electrodes
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tr
c
th
Pei
response sensitivity
Photoconductive detectors:Photoconductive detectors:pros and conspros and cons
c
ttr
high
low f
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Multiple-quantum well (MQW) Multiple-quantum well (MQW) detectorsdetectors
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p-np-n junction detector (photodiode) junction detector (photodiode)
- photovoltaic mode- photoconductive mode
i
I
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Silicon photodiodeSilicon photodiode
oppure…
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Silicon photodiodeSilicon photodiode
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Silicon photodiode: responsivitySilicon photodiode: responsivity
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Photodiode materialsPhotodiode materials
• Ge G = 1.88 m
• InxGa1-xAs (x = 0.53) G = 1.68 m
lattice matched to InP
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Response time of photodiodesResponse time of photodiodes
• transit time accross the depletion region
• junction capacitance effects
is minimized…
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Response time of photodiodesResponse time of photodiodes• carrier diffusion
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Noise in photodiodesNoise in photodiodes
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Schottky photodiodesSchottky photodiodes
fotoeccitazione elettroni metallo più lunghe
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Metal-semiconductor-metal (MSM) Metal-semiconductor-metal (MSM) photodetectorphotodetector
capacità più piccole dispositivi più veloci
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Avalanche photodetectors (APD)Avalanche photodetectors (APD)
The guard ring structure is a low doping region where depletion regionextends an appreciable distance into it
In the vicinity of guard ring the total depletion layer is greater (hence themaximum electric field is lower) than in the central region
reduced breakdown no current leakage fron the edge
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PhototransistorPhototransistor
VCB < 0
IB
IE = IB
Maggiore sensibilità (mA)
ma…
Minore velocità (s contro i ns dei fotodiodi)
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Charge-Coupled DevicesCharge-Coupled Devices(CCD)(CCD)
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Charge-Coupled DevicesCharge-Coupled Devices(CCD)(CCD)
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Charge-Coupled DevicesCharge-Coupled Devices(CCD)(CCD)
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CCD: read-out mechanismsCCD: read-out mechanisms
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CCD: read-out mechanismsCCD: read-out mechanisms