PBSS4130QA - NexperiaPBSS4130QA rw•iwDPs9)Q),=Mv)SooDPNEtdDwdwDVwB Nexperia PBSS4130QA 30 V, 1 A...

PBSS4130QA30 V, 1 A NPN low VCEsat (BISS) transistor28 August 2013 Product data sheet

1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.

PNP complement: PBSS5130QA.

2. Features and benefits• Very low collector-emitter saturation voltage VCEsat• High collector current capability IC and ICM• High collector current gain hFE at high IC• High energy efficiency due to less heat generation• Reduced Printed-Circuit Board (PCB) area requirements• Solderable side pads• AEC-Q101 qualified

3. Applications• Loadswitch• Battery-driven devices• Power management• Charging circuits• Power switches (e.g. motors, fans)

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VCEO collector-emittervoltage

open base - - 30 V

IC collector current - - 1 A

ICM peak collector current single pulse; tp ≤ 1 ms - - 1.5 A

RCEsat collector-emittersaturation resistance

IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs;δ ≤ 0.02 ; Tamb = 25 °C

- 175 235 mΩ

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS4130QA30 V, 1 A NPN low VCEsat (BISS) transistor

PBSS4130QA All information provided in this document is subject to legal disclaimers.

Product data sheet 28 August 2013 2 / 17

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 B base

2 E emitter

3 C collector

4 C collector

Transparent top view

1

2

34

DFN1010D-3 (SOT1215)

sym123

C

E

B

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PBSS4130QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package; noleads; 3 terminals

SOT1215

7. MarkingTable 4. Marking codesType number Marking code

PBSS4130QA 01 00 10

MARKING CODE(EXAMPLE)

PIN 1 INDICATION MARK

VENDOR CODE

YEAR DATECODE

READING DIRECTION

READING EXAMPLE:

110110

aaa-008041

MARK-FREE AREA

Fig. 1. DFN1010D-3 (SOT1215) binary marking code description





8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 30 V

VCEO collector-emitter voltage open base - 30 V

VEBO emitter-base voltage open collector - 7 V

IC collector current - 1 A

ICM peak collector current single pulse; tp ≤ 1 ms - 1.5 A

IB base current - 0.3 A

IBM peak base current single pulse; tp ≤ 1 ms - 1 A

[1] - 325 mW

[2] - 600 mW

[3] - 740 mW

[4] - 540 mW

Ptot total power dissipation Tamb ≤ 25 °C

[5] - 1000 mW

Tj junction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 PCB single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm2.[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm2.





Tamb (°C)-75 17512525 75-25

aaa-007844

0.50

0.75

0.25

1.00

1.25Ptot(W)

0

(1)

(2)

(3)

(4)

(5)

(1) FR4 PCB, 4-layer copper, 1 cm2

(2) FR4 PCB, single-sided copper, 6 cm2

(3) FR4 PCB, single-sided copper, 1 cm2

(4) FR4 PCB, 4-layer copper, standard footprint(5) FR4 PCB, single-sided copper, standard footprint

Fig. 2. Power derating curves

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - - 385 K/W

[2] - - 209 K/W

[3] - - 169 K/W

[4] - - 232 K/W

Rth(j-a) thermal resistancefrom junction toambient

in free air

[5] - - 125 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm2.[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm2.





aaa-007845

10-5 1010-210-4 10210-1tp (s)

10-3 1031

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 1

0.750.5

0.330.2

0.1

0.05

0.020.01

0

FR4 PCB, single-sided copper, standard footprint

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valuesaaa-007846

10

1

102

103

Zth(j-a)(K/W)

10-110-5 1010-210-4 10210-1

tp (s)10-3 1031

duty cycle = 10.75

0.50.33

0.20.1

0.05

0.020.01

0

FR4 PCB, single-sided copper, 1 cm2

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





aaa-007847

10-5 1010-210-4 10210-1tp (s)

10-3 1031

102

10

103

Zth(j-a)(K/W)

10

0.01

0.02

0.050.1

0.20.33

0.50.75

duty cycle = 1

FR4 PCB, single-sided copper, 6 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valuesaaa-007848

10-5 1010-210-4 10210-1tp (s)

10-3 1031

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 1

0

0.010.02

0.050.1

0.20.33

0.50.75

FR4 PCB, 4-layer copper, standard footprint






aaa-007849

10-5 1010-210-4 10210-1tp (s)

10-3 1031

102

10

103

Zth(j-a)(K/W)

10 0.01

0.02

0.050.1

0.20.33

0.50.75

duty cycle = 1

FR4 PCB, 4-layer copper, 1 cm2


10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

VCB = 24 V; IE = 0 A; Tamb = 25 °C - - 100 nAICBO collector-base cut-offcurrent VCB = 24 V; IE = 0 A; Tj = 150 °C - - 50 µA

ICES collector-emitter cut-offcurrent

VCE = 24 V; VBE = 0 V; Tamb = 25 °C - - 100 nA

IEBO emitter-base cut-offcurrent

VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA

VCE = 2 V; IC = 100 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

250 430 -

VCE = 2 V; IC = 500 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

230 380 -

hFE DC current gain

VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;δ ≤ 0.02 ; Tamb = 25 °C

180 290 -

IC = 500 mA; IB = 50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- 90 125 mV

IC = 1 A; IB = 50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- 180 245 mV

VCEsat collector-emittersaturation voltage


- 175 235 mV

RCEsat collector-emittersaturation resistance

IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs;δ ≤ 0.02 ; Tamb = 25 °C

- 175 235 mΩ





Symbol Parameter Conditions Min Typ Max Unit

IC = 500 mA; IB = 50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- 0.89 1 V


- 0.94 1.05 V

VBEsat base-emitter saturationvoltage


- 0.97 1.1 V

VBEon base-emitter turn-onvoltage

VCE = 2 V; IC = 0.5 A; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- 0.78 0.9 V

td delay time - 15 - ns

tr rise time - 30 - ns

ton turn-on time - 45 - ns

ts storage time - 425 - ns

tf fall time - 65 - ns

toff turn-off time

VCC = 10 V; IC = 0.5 A; IBon = 25 mA;IBoff = -25 mA; Tamb = 25 °C

- 490 - ns

fT transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz;Tamb = 25 °C

130 190 - MHz

Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C

- 8 10 pF

aaa-007990

IC (mA)10-1 1041031 10210

103

hFE

102

(1)

(2)

(3)

VCE = 2 V(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 8. DC current gain as a function of collectorcurrent; typical values

VCE (V)0 542 31

aaa-007991

0.5

1.0

1.5

IC(A)

0.0

IB (mA) = 54.5

43.5

3

2

1

2.5

1.5

0.5

Tamb = 25 °C

Fig. 9. Collector current as a function of collector-emitter voltage; typical values





aaa-007992

0.4

0.8

1.2

VBE(V)

0.0

IC (mA)10-1 1041031 10210

(1)

(2)

(3)

VCE = 2 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Fig. 10. Base-emitter voltage as a function of collectorcurrent; typical values

aaa-007993

0.4

0.8

1.2

VBEsat(V)

0.0

IC (mA)10-1 1041031 10210

(1)

(2)

(3)

IC/IB = 20(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Fig. 11. Base-emitter saturation voltage as a function ofcollector current; typical values

aaa-007994

10-1

10-2

1

VCEsat(V)

10-3

IC (mA)10-1 1041031 10210

(1)(2)(3)

IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 12. Collector-emitter saturation voltage as afunction of collector current; typical values

aaa-007995

10-1

10-2

1

VCEsat(V)

10-3

IC (mA)10-1 1041031 10210

(1)

(2)

(3)

Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10

Fig. 13. Collector-emitter saturation voltage as afunction of collector current; typical values





aaa-007996

IC (mA)10-1 1041031 10210

1

10

102

103

RCEsat(Ω)

10-1

(1)(2)(3)

IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 14. Collector-emitter saturation resistance as afunction of collector current; typical values

aaa-007997

IC (mA)10-1 1041031 10210

1

10

102

103

RCEsat(Ω)

10-1

(1)

(2)

(3)

Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10

Fig. 15. Collector-emitter saturation resistance as afunction of collector current; typical values





11. Test information

006aaa003

IBon (100 %)

IB

input pulse(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

IC

tdton

90 %

10 %

tr

output pulse(idealized waveform)

tf

t

tstoff

Fig. 16. BISS transistor switching time definition

RC

R2

R1

DUT

mlb826

Vo

RB(probe)450 Ω

(probe)450 Ω

oscilloscope oscilloscope

VBB

VI

VCC

Fig. 17. Test circuit for switching times

11.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.





12. Package outline

13-03-05Dimensions in mm

0.220.30

0.75

0.340.40

0.04max

0.951.05 0.1

0.170.25

0.160.24

0.1950.275

0.2450.325 1.05

1.15

0.870.95

1 2

3

Fig. 18. Package outline DFN1010D-3 (SOT1215)





13. Soldering

SOT1215Footprint information for reflow soldering of DFN1010D-3 package

sot1215_fr

solder land

solder resist

solder land plus solder paste

occupied area

Dimensions in mm

Issue date 12-11-2313-03-06

0.3

0.75

1.1

0.40.35 (2x)

0.45 (2x) 0.3

1.2

0.25 (2x)

0.5

0.4

0.5

1.41.5

0.3

0.3

0.4

0.5

1.3

0.4

0.4

0.5 1.3

Fig. 19. Reflow soldering footprint for DFN1010D-3 (SOT1215)





14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PBSS4130QA v.1 20130828 Product data sheet - -





15. Legal information

15.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

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Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

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16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................410 Characteristics .......................................................711 Test information ................................................... 1111.1 Quality information ............................................. 1112 Package outline ................................................... 1213 Soldering .............................................................. 1314 Revision history ...................................................1415 Legal information .................................................1515.1 Data sheet status ............................................... 1515.2 Definitions ...........................................................1515.3 Disclaimers .........................................................1515.4 Trademarks ........................................................ 16

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 28 August 2013

PBSS4130QA - NexperiaPBSS4130QA rw•iwDPs9)Q),=Mv)SooDPNEtdDwdwDVwB Nexperia PBSS4130QA 30 V, 1 A...

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