NEWCOM-WPR 3 MEETING
Transcript of NEWCOM-WPR 3 MEETING
ACTIVITIES
• RESEARCH: REAL FREQUENCYTECHNIQUES WITH LUMPED ANDDISTRIBUTED ELEMENTS
– ANTENNA MODELING TECHNIQUES– DESIGN OF MATCHING NETWORK– DESIGN OF MICROWAVE AMPLIFIERS
COMPUTER PACKAGES BEINGDEVELOPED
• MODELLING• DESIGN OF MATCHING NETOWRKS• DESIGN OF MULTI STAGE AMPLIFIERS• SYNTHESIS OF NETWORK FUNCTIONS WITH
LUMPED AND DISTRIBUTED ELEMENTS• NOTE: PACKAGES ARE NOT YET AVAILABLE
FOR PROFESSIONAL USE. MORE LABOR ISREQUIRED TO MAKE THEM PROFESSIONAL
JOINT ACTIVITIES
• 1 week crash course on Real FrequencyTechniques in Istanbul March 7-11, 2005
• Antenna Cluster Meeting in Istanbul,March 8, 2005.
• Course Materials had been prepared byIsik&Istanbul University and distributed toattendees.
COURSE CONTENTS
• March 7, 2005: Prof. Dr. Sıddık Yarman
• TUTORIAL 1: Network theoretical fundamentals of RealFrequency Broad Band Matching
• TUTORIAL 2: General Overview of Real Frequency Techniques(Line segment Technique, Direct Computational Technique,Parametric Approach)
• TUTORIAL 3: Scattering based Simplified Real FrequencyTechnique
• TUTORIAL 4: Design of Matching Networks and MultistageAmplifiers via Simplified Real Frequency Technique (SRFT)
Course Contents
• March 8,2005: Prof. Dr. Ahmet Aksen (IsikUniversity)-Prof. Dr. Sıddık Yarman (IstanbulUniversity)
• TUTORIAL 5: Multivariable characterization of mixedlumped and distributed networks via SRFT
• TUTORIAL 6: Design of Matching Networks withMixed Lumped and Distributed Elements via SRFT
• TUTORIAL 7: Design of Multi-Stage Amplifiers withMixed Lumped and Distributed Elements via SRFT
COURSE CONTENTS
• March 9,2005: Prof. Dr. Sıddık Yarman, Dr. Ali Kılınç
• TUTORIAL 8: Practical Circuit Modeling forNumerical Data
• TUTORIAL 9: Immitance based Data modeling
• TUTORIAL 10: Scattering Based Data Modeling
COURSE CONTENTS
• March 10,2005 Dr. Ali Kılınç, Dr. Ebru Gürsu Çimen, Metin Sengul,Hacı Pınarbaşı,
• WORKSHOPS• WORKSHOP 1: Circuit models• WORKSHOP 2: Real Frequency Design• WORKSHOP 3: Design examples• March 11,2005• Further Design Examples• WPR-3 ANTENNA CLUSTER MEETING
RFT COURSE HELD IN ISTANBUL
• ATTENDANCY
CTTC, EspaniaXavier Nieto
CTTC, EspaniaPavel Miskovsky
CTTC, EspaniaAntonio Mollfullleda
CTTC, EspaniaJordi Mateu
Uppsala University, SwedenPeter Lindberg
Uppsala University, SwedenEric Öjefors
Technishe Universitat Ilmenau, GermanyJohannes Trabert
Technishe Universitat Ilmenau, GermanyJörn Weber
Local Attendance
• Dogus University Group: Students of Yarman• Lerzan Akbulu• Hüsyin Kaftan• Emel Alisoğlu• Faruk Tufan• Suphi Yildiz
• Ferhat Bektaş (Mersin University)
RFT COURSEISIK & ISTANBUL UNIVERSITY TEAM
• Metin Sengul• Hacı Pınarbaşı• Ali Kılınc• Ebru Gürsu Çimen• Ahmet Aksen• Sıddık Yarman
Future Integration Activities:
• Antenna measurements• Active device measurements• Antenna Modeling and design of Matching
Networks for antennas• Design of Microwave Power Amplifiers
Team• Metin Sengul (PhD Student)• Haci Pinarbasi (PhD Student)• Dr. Ali Kilinc (Post Doc.)• Dr. Ebru Gürsu Çimen (Post Doc)• Prof. Dr. Ahmet Aksen• Prof. Dr. Sıddık Yarman (Istanbul University)• Note: Dr. Yarman will add more Ph. D Students
from Istanbul University.• Problem: Contract must be revised to cover new
appointment of Dr. Yarman
Publications• Yarman, Sengul, Kilinc, Aksen, “Circuit Model for Given
Reflectance Data Constructed with Mixed Lumped andDistributed Elements for High Speed/High FrequencyCommunication Systems”, NDS-2005, 4 th InternationalWorkshop on Multi Dimensional Systems, 10-13 July,2005, Wuppertal, Germany.
• Full length version of the above paper has beenprepared.
• Yarman, Kilinc, Aksen, “Immitance Based Data Modeling”International Journal of Circuit Theory and Applications,December 2004.
Design Example: Single StageAmplifier
CAP
C=ID=
1.3 pFC2
IND
L=ID=
1.814 nHL1
IND
L=ID=
3.777 nHL2
IND
L=ID=
4.32 nHL3
IND
L=ID=
3.246 nHL4
TLIN
F0=EL=Z0=ID=
15.78 GHz90 Deg42.36 OhmTL1
TLIN
F0=EL=Z0=ID=
15.78 GHz90 Deg49.21 OhmTL2
TLIN
F0=EL=Z0=ID=
15.78 GHz90 Deg58.28 OhmTL3
TLIN
F0=EL=Z0=ID=
15.78 GHz90 Deg52.56 OhmTL4
1 2
SUBCKT
NET=ID=
"S_Parameters"AM012MXQFPORT
Z=P=
50 Ohm1
PORT
Z=P=
50 Ohm2CAP
C=ID=
2.3 pFC1
Front – End Equalizer
22
23 2
22 2
22
2
( , )( , )
( , )
( , ) (0.6148 1.3484 1.4053 1)
(2.7302 3.4821 1.8313) (1.765 1.161)
( , ) (0.6474 1.105 1) (2.2035 2.196)
0.8608
n pZ p
d p
n p p p p
p p p
d p p p p
λλ
λ
λ
λ λ
λ λ
λ
=
= + + + +
+ + + +
= + + + +
+
Back – End Equalizer2
22
3 21
2 2
21
2
( , )( , )
( , )
( , ) (0.7156 0.8858 1.8967 1)
(3.2864 2.9152 2.2168) (1.482 1.1087)
( , ) (0.6592 0.816 1) (2.319 1.809)
0.9019
n pZ p
d p
n p p p p
p p p
d p p p p
λλ
λ
λ
λ λ
λ λ
λ
=
= + + + +
+ + + +
= + + + +
+
Frequency (GHz)
1 1.2 1.4 1.6 1.8 2
15
16
17
18
19
20
21Tr
ansd
ucer
Pow
er G
ain
(dB
)MATLAB
AWR
Design Example: Single StageAmplifier
Design Example:Two StageAmplifier
Scattering Parameters of the 0.3mm Low-noise Gate GaAs MESFET NE76000Biased at VDS = 3 V, IDS = 10 mA
0.67 -160.66 -230.64 -300.62 -360.60 -420.59 -470.58 -530.57 -
580.57 -
63
0.04 740.06 660.07 590.09 510.09 470.10 410.11 360.11 300.12 29
3.191583.081482.951382.811292.671202.551132.45104
2.33 972.24 90
0.99 -27
0.97 -39
0.95 -50
0.92 -61
0.89 -70
0.87 -78
0.86 -87
0.83 -96
0.81 -
2.03.04.05.06.07.08.09.0
10.0
s22m p
s12m p
s21m p
s11m p
Freq.GHz
Coefficients of Equalizers
⎥⎦⎤
⎢⎣⎡−
=Λ 8863.105205.003784.10
H
⎥⎦⎤
⎢⎣⎡=Λ 8863.19817.15205.0
000.14290.20000.1G
⎥⎦
⎤⎢⎣
⎡−
=Λ6065.204949.008592.10
H
⎥⎦
⎤⎢⎣
⎡=Λ
6065.22715.24949.00000.17307.20000.1
G
⎥⎥⎥
⎦
⎤
⎢⎢⎢
⎣
⎡
−−=Λ
3766.103765.0009160.305094.0
2332.006678.20
H
⎥⎥⎥
⎦
⎤
⎢⎢⎢
⎣
⎡=Λ
3766.14398.13765.004782.14621.54263.35094.00268.11765.30584.40000.1
G
Input matching network:
Interstage matching network:
Output matching network:
Design Example:Two StageAmplifier
1 2NEC76000
1 2NEC760001 2
Input matchingnetwork
1 2
Interstage matchingnetwork
1 2
Output matchingnetwork
Z=50 Ohm Z=50 Ohm
Z0
50 Ohm
Z0
C50 Ohm
50 Ohm 50 OhmCC
Z1 Z1Z2
Input InterstageZ0= 95.1842ΩC= 0.33136pF
Z0 = 114.7467 ΩC = 0.31506pF Z1= 95.6074 Ω
Z2= 145.0932 ΩC = 0.16215pF
OutputTransducer Power Gain
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10
5
10
15
20
25
Frequency GHz
Gain dB
Input GainPerformance of amplifier
Design Example:Two StageAmplifier
⎥⎥⎥
⎦
⎤
⎢⎢⎢
⎣
⎡
−−−
−−−
=Λ
004797.005887.20215.09181.23663.01706.1
9890.05352.10
H
⎥⎥⎥
⎦
⎤
⎢⎢⎢
⎣
⎡
=Λ
004797.005887.26803.0
9181.26279.26526.14065.16776.21
G
⎥⎥
⎦
⎤
⎢⎢
⎣
⎡−
−=Λ
01384.02299.05375.07650.05099.06233.04481.00
H
⎥⎥
⎦
⎤
⎢⎢
⎣
⎡=Λ
01384.02299.05375.05828.18484.01783.11348.21
G
⎥⎥
⎦
⎤
⎢⎢
⎣
⎡ −=Λ
01308.12796.00368.70495.14506.00087.58473.00
H
⎥⎥
⎦
⎤
⎢⎢
⎣
⎡=Λ
01308.12796.00368.77581.28731.01076.55963.31
G
Front-End
Coefficients of Mixed Element EqualizerScattering Data for HP 1 µm FET
Interstage Back-End
Design Example:Two StageAmplifier
4 4.5 5 5.5 6 6.5 7 7.5 84
5
6
7
8
9
10
11
12
13
14
15
Frequency(GHz)
TPG
(dB
)
2nd stage gain1st stage gain
Transducer Power Gain
τ5=τ6=0.25
C4=170.8pF,
Z6=16.82Ω
L3=60.2pH,
Z5=40Ω,C3=182pF,
τ3=τ4=0.2
Z4=200ΩC2=52.8pF
Z3=20ΩL2=165pH
τ 1= τ2=0.2
Z2=30ΩC1=170pF
Z1=54.23Ω
L1=42.3pH