Coss Hysteresis in Advanced Superjunction MOSFETs - APEC 2016 Presentation - compressed
MOSFET - Farnell element14 · MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a...
Transcript of MOSFET - Farnell element14 · MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a...
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IPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
PG-TO220FP
DrainPin 2, Tab
GatePin 1
SourcePin 3
MOSFET700VCoolMOSªP7PowerTransistorCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcostsensitiveapplicationsinconsumermarketssuchascharger,adapter,lighting,TV,etc.ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunctionMOSFET,combinedwithanexcellentprice/performanceratioandstateoftheartease-of-uselevel.Thetechnologymeetshighestefficiencystandardsandsupportshighpowerdensity,enablingcustomersgoingtowardsveryslimdesigns.
Features•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss•Excellentthermalbehavior•IntegratedESDprotectiondiode•Lowswitchinglosses(Eoss)•Qualifiedforstandardgradeapplications
Benefits•Costcompetitivetechnology•Lowertemperature•HighESDruggedness•Enablesefficiencygainsathigherswitchingfrequencies•Enableshighpowerdensitydesignsandsmallformfactors
PotentialapplicationsRecommendedforFlybacktopologiesforexampleusedinChargers,Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 700 V
RDS(on),max 0.45 Ω
Qg,typ 13.1 nC
ID,pulse 26 A
Eoss @ 400V 1.4 µJ
V(GS)th,typ 3 V
ESD class (HBM) 2
Type/OrderingCode Package Marking RelatedLinks
IPAN70R450P7S PG-TO 220 FullPAK -Narrow Lead 70S450P7 see Appendix A
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
1MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID --
--
10.06.5 A TC = 20°C
TC = 100°C
Pulsed drain current2) ID,pulse - - 25.9 A TC=25°C
Application (Flyback) relevantavalanche current, single pulse3) IAS - - 3.5 A measured with standard leakage
inductance of transformer of 7µH
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage VGS-16-30
--
1630 V static;
AC (f>1 Hz)
Power dissipation Ptot - - 22.7 W TC=25°COperating and storage temperature Tj,Tstg -40 - 150 °C -
Continuous diode forward current IS - - 4.7 A TC=25°CDiode pulse current2) IS,pulse - - 25.9 A TC = 25°C
Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°CMaximum diode commutation speed4) dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°CInsulation withstand voltage VISO - - 2500 V Vrms, TC=25°C, t=1min
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction RthJC - - 5.5 °C/W -
Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded
Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W n.a.
Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10s
1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.52) Pulse width tp limited by Tj,max3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.4)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
3Electricalcharacteristics
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 700 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.12mA
Zero gate voltage drain current IDSS --
-10
1- µA VDS=700V,VGS=0V,Tj=25°C
VDS=700V,VGS=0V,Tj=150°C
Gate-source leakage current incl. Zenerdiode IGSS - - 1 µA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
0.370.84
0.45- Ω VGS=10V,ID=2.3A,Tj=25°C
VGS=10V,ID=2.3A,Tj=150°C
Gate resistance RG - 10 - Ω f=1MHz,opendrain
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 424 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 8 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energyrelated1) Co(er) - 21 - pF VGS=0V,VDS=0...400V
Effective output capacitance, timerelated2) Co(tr) - 251 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 16 - ns VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω
Rise time tr - 6.5 - ns VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω
Turn-off delay time td(off) - 70 - ns VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω
Fall time tf - 20 - ns VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω
Table6GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 1.9 - nC VDD=400V,ID=1.7A,VGS=0to10VGate to drain charge Qgd - 5.0 - nC VDD=400V,ID=1.7A,VGS=0to10VGate charge total Qg - 13.1 - nC VDD=400V,ID=1.7A,VGS=0to10VGate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=1.7A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
Table7ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=2.6A,Tj=25°CReverse recovery time trr - 200 - ns VR=400V,IF=1.7A,diF/dt=50A/µsReverse recovery charge Qrr - 0.7 - µC VR=400V,IF=1.7A,diF/dt=50A/µsPeak reverse recovery current Irrm - 8 - A VR=400V,IF=1.7A,diF/dt=50A/µs
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
5
10
15
20
25
30
35
40
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
1 µs10 µs
100 µs
1 ms10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
1 µs
10 µs100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-1 10010-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
5
10
15
20
25
3020 V 10 V 8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
5
10
15
2020 V 10 V 8 V 7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 10 20 300.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.005 V 5.5 V 6 V
6.5 V
7 V10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [Ω]
-50 -25 0 25 50 75 100 125 1500.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
98%
typ
RDS(on)=f(Tj);ID=2.3A;VGS=10V
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 10 120
5
10
15
20
25
30
25 °C
150 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS [V]
0 5 10 150
1
2
3
4
5
6
7
8
9
10
400 V120 V
VGS=f(Qgate);ID=1.7Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.010-1
100
101
102
25 °C125 °C
IF=f(VSD);parameter:Tj
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-75 -50 -25 0 25 50 75 100 125 150 175600
620
640
660
680
700
720
740
760
780
800
820
840
VBR(DSS)=f(Tj);ID=1mA
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
Diagram14:Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 50010-1
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 100 200 300 400 500 600 700 8000.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Eoss=f(VDS)
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
6PackageOutlines
1
REVISION
04
07.11.2016
ISSUE DATE
EUROPEAN PROJECTION
0
SCALE
5mm
DOCUMENT NO.
Z8B00180155
A2
b
D
c
E
e
L
Q
øP
L1
N
D1
A
DIMENSIONS
A1
2.672.47
2.54
15.90
0.46
0.56
10.40
1.70
3.25
3.00
13.45
9.58
3
0.69
0.59
16.10
3.45
3.20
1.90
13.75
10.60
9.78
MILLIMETERS
MIN.
4.60
2.60
MAX.
4.80
2.80
b1 1.01 1.15
5:1
2 3 4
Figure1OutlinePG-TO220FullPAK-NarrowLead,dimensionsinmm-IndustrialGrade
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
7AppendixA
Table11RelatedLinks
• IFXCoolMOSªP7Webpage:www.infineon.com
• IFXDesigntools:www.infineon.com
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700VCoolMOSªP7PowerTransistorIPAN70R450P7S
Rev.2.0,2017-09-15Final Data Sheet
RevisionHistoryIPAN70R450P7S
Revision:2017-09-15,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2017-09-15 Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
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