Modulo IGBT SEMIKRON SKM 75GD123D
6
SEMITRANS ® 6 IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features ! " # $ % & ' ( ) ' * % " +*, + , - . /0 Typical Applications* +* " - ' 1* ' GD GDL Absolute Maximum Ratings - 2 34 5* ' Symbol Conditions Values Units IGBT *6 - 7 2 34 5* /399 % * - 7 2 /49 5* - 2 34 5* :4 1 - 2 ;9 5* 49 1 % *< % *< 23$% * /99 1 =6 > 39 ** 2 #99 ? =6 @ 39 ? *6 A /399 - 7 2 /34 5* /9 B Inverse Diode % ( - 7 2 /49 5* - 2 34 5* :4 1 - 2 ;9 5* 49 1 % (< % (< 23$% ( /99 1 % ( 2 /9 ? C - 7 2 /49 5* 449 1 Module % < /99 1 - 7 & D9 CCCE /49 5* - & D9 CCCE /34 5* 1* / C 3499 Characteristics - 2 34 5* ' Symbol Conditions min. typ. max. Units IGBT =6 =6 2 *6 % * 2 3 1 D4 44 #4 % *6 =6 2 9 *6 2 *6 - 7 2 34 5* 9D /3 1 *69 - 7 2 34 5* /D /# - 7 2 /34 5* /# /; *6 =6 2 /4 - 7 2 345* 33 3; F - 7 2 /345* 09 0; F *6 % * 2 49 1 =6 2 /4 - 7 2 5* C 34 0 * 00 D0 ( * *6 2 34 =6 29 ' 2 / !G 94 9# ( * 933 90 ( DD /99 < = 2 33 F ** 2 #99 4# /99 6 % * 2 491 ; H '' < ='' 2 33 F - 7 2 /34 5* 0;9 499 ' =6 2 > /4 :9 /99 6 '' 4 H < 7& %=,- 903 IJK SKM 75GD123D 1 13-01-2009 NOS © by SEMIKRON
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Modulo IGBT SEMIKRON SKM 75GD123D
Transcript of Modulo IGBT SEMIKRON SKM 75GD123D
SEMITRANS® 6
IGBT Modules
SKM 75GD123DL
SKM 75GD123D
SKM 75GDL123D
Features
Typical Applications*
GD GDL
Absolute Maximum RatingsSymbol Conditions Values UnitsIGBT
Inverse Diode
Module
CharacteristicsSymbol Conditions min. typ. max. UnitsIGBT
SKM 75GD123D
1 13-01-2009 NOS © by SEMIKRON
SEMITRANS® 6
IGBT Modules
SKM 75GD123DL
SKM 75GD123D
SKM 75GDL123D
Features
Typical Applications*
GD GDL
CharacteristicsSymbol Conditions min. typ. max. UnitsInverse Diode
Module
This is an electrostatic discharge sensitive device (ESDS), international standardIEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance ofcomponent characteristics. Components have to be tested for the respectiveapplication. Adjustments may be necessary. The use of SEMIKRON products inlife support appliances and systems is subject to prior specification and writtenapproval by SEMIKRON. We therefore strongly recommend prior consultation ofour personal.
SKM 75GD123D
2 13-01-2009 NOS © by SEMIKRON
SEMITRANS® 6
IGBT Modules
SKM 75GD123DL
SKM 75GD123D
SKM 75GDL123D
Features
Typical Applications*
GD GDL
Zth
Symbol Conditions Values UnitsZ
th(j-c)l
Zth(j-c)D
SKM 75GD123D
3 13-01-2009 NOS © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC
= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (R
G)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 75GD123D
4 13-01-2009 NOS © by SEMIKRON
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge
SKM 75GD123D
5 13-01-2009 NOS © by SEMIKRON
UL Recognized File 63 532
SKM 75GD123D
6 13-01-2009 NOS © by SEMIKRON
