SKM 600GB066D - Power modules and systems | …® 3 Trench IGBT Modules SKM 600GB066D Features ! "#$...
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SEMITRANS ® 3 Trench IGBT Modules SKM 600GB066D Features ! " # $ Typical Applications* % & '() & Remarks * &* +,-.! * /01 *** 2+-1.! & * & 3 4+-1. ) &5 4 " 7 8 4 +-7 3 +-1.7 4 9"1! : 8 ; < / & &* $ = 4-11% +11. GB Absolute Maximum Ratings ,-.! & Symbol Conditions Values Units IGBT ) 3 ,- . "11 $ 3 +?- . ,- . ?"1 % @1 . -?1 % $ :A $ :A +!99#$ @11 % 8) B,1 9"1 7 8 4 +- 7 ) C "11 3 +-1 . " Inverse Diode $ D 3 +?- . ,- . ?11 % @1 . -+1 % $ D:A $ D:A +!99#$ D @11 % Module $ :A) -11 % 3 / 01 2 +?- . / 01 2 +,- . %! + * 0111 Characteristics ,-.! & Symbol Conditions min. typ. max. Units IGBT 8 8 !$ E!" % - -!@ "!- $ ) 8 1 ! ) 3 ,- . 1!9 1!E % 1 3 ,- . 1!E + 3 +-1 . 1!@- 1!E 8 +- 3 ,-. 1!E +!- F 3 +-1. +!0 , F $ "11 %! 8 +- 3 ,-. * +!0- +!E 3 +-1. * +!? ,!+ 9? D ,-! 8 1 + AG ,!9 D +!+ D H 8 8 /@***2+- 0011 : 8 3 . 1!- I & ,?1 : 8 +!- I 911 ?? $ "11% ?!- J & : 8 +!- F 3 +-1 . "?1 8 /@K2+- ?? ,E!- J : 3/ $8L 1!1@ MKN SKM 600GB066D 1 06-10-2009 NOS © by SEMIKRON
Transcript of SKM 600GB066D - Power modules and systems | …® 3 Trench IGBT Modules SKM 600GB066D Features ! "#$...
SEMITRANS® 3
Trench IGBT Modules
SKM 600GB066D
Features
Typical Applications*
Remarks
GB
Absolute Maximum Ratings
Symbol Conditions Values Units
IGBT
Inverse Diode
Module
Characteristics
Symbol Conditions min. typ. max. Units
IGBT
SKM 600GB066D
1 06-10-2009 NOS © by SEMIKRON
SEMITRANS® 3
Trench IGBT Modules
SKM 600GB066D
Features
Typical Applications*
Remarks
GB
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
Module
This is an electrostatic discharge sensitive device (ESDS), international standardIEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance ofcomponent characteristics. Components have to be tested for the respectiveapplication. Adjustments may be necessary. The use of SEMIKRON products inlife support appliances and systems is subject to prior specification and writtenapproval by SEMIKRON. We therefore strongly recommend prior consultation ofour personal.
SKM 600GB066D
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SEMITRANS® 3
Trench IGBT Modules
SKM 600GB066D
Features
Typical Applications*
Remarks
GB
Zth
Symbol Conditions Values Units
Zth(j-c)l
Zth(j-c)D
SKM 600GB066D
3 06-10-2009 NOS © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC
= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (R
G)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 600GB066D
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Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge
SKM 600GB066D
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UL recognized, file no. E 63 532
SKM 600GB066D
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