Modulo IGBT SEMIKRON SKM 50GB123D

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SEMITRANS ® 2 IGBT Modules SKM 50GB123D SKM 50GAL123D Features ! "#$ %& ' ! %( $ )%* ) % * + Typical Applications* (% , GB GAL Absolute Maximum Ratings + - ./ 0% ! Symbol Conditions Values Units IGBT 1 %2 + 3 - ./ 0% 5.66 1 $ % + 3 - 5/6 0% + - ./ 0% /6 ( + - 76 0% 86 ( $ %9 $ %9 -.#$ % 566 ( 1 :2 ; .6 1 1 %% - "66 1< 1 :2 = .6 1< 1%2 > 5.66 1 + 3 - 5./ 0% 56 ? Inverse Diode $ ' + 3 - 5/6 0% + - ./ 0% /6 ( + - 76 0% 86 ( $ '9 $ '9 - .#$ ' 566 ( $ ' - 56 < @ + 3 - 5/6 0% //6 ( Freewheeling Diode $ ' + 3 - 5/6 0% + - ./ 0% /6 ( + - 76 0% 86 ( $ '9 $'9 - .#$' 566 ( $ ' - 56 < @ + 3 - 5/6 0% //6 ( Module $ 9 .66 ( + 3 A 86 @@@B5/6 0% + 5./ 0% 1 (% 5 @ ./66 1 Characteristics + - ./ 0% ! Symbol Conditions min. typ. max. Units IGBT 1 :2 1 :2 -1 %2 $ % - . ( 8/ // "/ 1 $ %2 1 :2 - 6 1 1 %2 -1 %2 + 3 - ./ 0% 65 6C ( + 3 - 5./ 0% ( 1 %26 + 3 - ./ 0% 5 55/ 1 + 3 - 5./ 0% 6D 56/ 1 %2 1 :2 - 5/ 1 + 3 - ./0% C6 CE F + 3 - 5./0% 88 /C F 1 %2 $ % - /6 ( 1 :2 - 5/ 1 + 3 - ./0% @ ./ C 1 + 3 - 5./0% @ C5 CE 1 % CC ' % 1 %2 - ./ 1 :2 -61 ! - 5 G 6/ ' % 6. ' H : 1 :2 - A71 A B.61 /66 % 9 : + 3 - 0% ./ I E6 9 : - .E I 1 %% - "661 "6 2 $ % - 86( E J !! 9 :!! - .E F + 3 - 5./ 0% 866 ! 8/ 2 !! 8/ J 9 3A $:*+ 68 KLM SKM 50GB123D ... 1 23-11-2006 RAA © by SEMIKRON

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Modulo IGBT SEMIKRON SKM 50GB123D

Transcript of Modulo IGBT SEMIKRON SKM 50GB123D

Page 1: Modulo IGBT SEMIKRON SKM 50GB123D

SEMITRANS® 2

IGBT Modules

SKM 50GB123D

SKM 50GAL123D

Features

Typical Applications*

GB GAL

Absolute Maximum RatingsSymbol Conditions Values UnitsIGBT

Inverse Diode

Freewheeling Diode

Module

CharacteristicsSymbol Conditions min. typ. max. UnitsIGBT

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SEMITRANS® 2

IGBT Modules

SKM 50GB123D

SKM 50GAL123D

Features

Typical Applications*

GB GAL

CharacteristicsSymbol Conditions min. typ. max. UnitsInverse Diode

Freewheeling Diode

Module

This is an electrostatic discharge sensitive device (ESDS), international standardIEC 60747-1, Chapter IX.

* The specifications of our components may not be considered as an assurance ofcomponent characteristics. Components have to be tested for the respectiveapplication. Adjustments may be necessary. The use of SEMIKRON products inlife support appliances and systems is subject to prior specification and writtenapproval by SEMIKRON. We therefore strongly recommend prior consultation ofour personal.

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Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'

Fig. 2 Rated current vs. temperature IC

= f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (R

G)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

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Fig. 7 Typ. switching times vs. IC

Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic

Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge

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UL recognized File no. E 63 532

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