Laser Produced Plasma EUV Source Development for Mass 0 20...
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7. EUV AT HIGH REPITITION RATE Laser Produced Plasma EUV Source Development for Mass Production of sub-20nm Devices Igor V. Fomenkov, D. C. Brandt, D. W. Myers, D. J. Brown, A. I. Ershov, R. L. Sandstrom, G. O. Vaschenko, N. R. Böwering, P. Das, V. Fleurov, K. Zhang, S. N. Srivastava, I. Ahmad, C. Rajyaguru, S. De Dea, W. J. Dunstan, P. Baumgart, T. Ishihara, R. Simmons, R. Jacques, R. Bergstedt, P. Porshnev, C. Wittak, R. Rafac, J. Grava, A. Schafgans, Y. Tao, B. La Fontaine, and S. E. Richardson Cymer Inc., 17075 Thornmint Ct., San Diego, CA, 92127, USA 2012 EUVL Symposium Brussels Belgium 1. LASER-PLASMA SOURCE CONFIGURATION 3. POWER ROADMAP 2. 8. COLLECTOR LIFETIME 9. SUMMARY 5. DEBRIS MITIGATION 6. DROPLET STABILITY HVMI FIELD PERFORMANCE‘ In the Field: 9-13W Average Power with <0.5% Dose Stability • SEMI E10 availability of sources in field approximately ~60% • Droplet stability <3nm for 80% of days YTD • Capability for >100 wafers per day throughput Improved droplet stability with new droplet generator steering (σ y , σ z : 2.8, 3.2 to 1.1, 1.3 μm) MTBS increasing, Uptime in slight decline (SEMI E10 data) 158W raw power and 190W peak raw power shown in low duty cycle demonstration on LT1 ~1.9 mJ EUV per pulse demonstrated at 50kHz on Pilot 7, equivalent to 90W EUV power 4. EUV POWER SCALING EUV POWER CAPABILITY DEMO 2012 International Symposium on EUVL: Brussels, Belgium October 1, 2012 DROPLET GENERATOR STEERING IMPROVEMENTS Tin cleaning during source operation Major Improvements to Collector Lifetime • 10 HVM I sources installed and operational • HVM I source EUV average power ~9-13W in field with better than <0.5% dose stability and capability of >100 wafers per day productivity • Collector lifetime of 45 billion pulses achieved in field • 50W expose power demonstrated with closed loop control for over five hours of continuous operation; up to 90W in-burst power demonstrated; 160W peak raw power shown on development tool • First HVM II source for ASML NXE 3300 scanner is delivered, integration of the next several is in process This work is supported by our technology partners: IMPROVED COLLECTOR LIFETIME IN FIELD Three major subsystems of source architecture: - Drive Laser - Beam Transport System - Source Vessel HVM II oriented at a steeper angle than HVM I, enabling ~2x higher optical transmission in scanner Additional power amplifier on HVM II system enables higher laser power than HVM I Source Vessel Beam Transport System Drive Laser RF Generators Heat Exchangers HVM I HVM II HVM II MULTIPLE MLM COATING TESTS IN PARALLEL Collector sample holder (54 samples) HVM I Source Model HVM I HVM II Average Laser Power (kW) 20 23 24 31 43 In-Band CE (%) 2.0 2.0 2.5 2.5 3.0 Clean EUV Power (W) 60 80 125 160 250 0 20 40 60 80 100 120 140 160 180 200 0 250 500 750 1000 Frequency EUV Power @ IF (W) 158W 24 kW CO 2 Power at 3% DC for >15 minutes Collector sample holder (92 samples) 45 Bp 0 Bp STABILITY MAINTAINED WITH REP RATE INCREASE Repetition rate can be increased to >60kHz without disrupting next droplet (Image shows 30 um droplets at 120 kHz with 500 um droplet spacing) Near-linear laser power scaling up to 85% duty cycle shown on both Pilot 7 and 9 0 20 40 60 80 100 0 10 20 30 40 201206 201210 201214 201218 201222 201226 201230 201234 Uptime (%) MTBS (hours) ISO Week Availability Performance 13-week rolling average of 5 field sites MTBS Uptime 0% 20% 40% 60% 80% 100% 0 5 10 15 20 0.65 3.15 5.65 8.15 10.65 13.15 15.65 18.15 20.65 23.15 25.65 28.15 30.65 33.15 Frequency Daily Y Droplet Stability (1-σ) Droplet Stability Daily average at 5 field sites Frequency Cumulative % Drive Laser for HVM II HVM I Architecture ~1.9mJ EUV pulse energy and 158W EUV power demonstrated on pilot sources at Cymer • ~2x increase in lifetime, compared to six months prior • No degradation in collector reflectivity up to 40 Bp ~2x improved capacity for testing multiple MLM coatings in parallel 0 20 40 60 80 100 0 2000 4000 6000 8000 10000 12000 14000 16000 Power P7 (W) Power P9 (W) Laser Power, Watt Duty Cycle, % 0.006 0.008 0.010 0.012 0.014 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 EUV pulse energy, mJ Time, sec EUV pulse energy LASER POWER ROLL-OFF EUV PULSE ENERGY Photos of collector sample holder and far-field EUV images of samples under test (54 sample holder left, 92 sample holder right) New steering leads to improved dose stability SEM image of sample before installation into source chamber with 32 nm thick layer of tin deposited P-SO-01 SEM image of sample above after source operation, thickness of tin is 2 nm, measured with X-Ray Fluorescence (XRF) EUV distributions measured by scanner
Transcript of Laser Produced Plasma EUV Source Development for Mass 0 20...
7. EUV AT HIGH REPITITION RATE
Laser Produced Plasma EUV Source Development for Mass
Production of sub-20nm Devices Igor V. Fomenkov, D. C. Brandt, D. W. Myers, D. J. Brown, A. I. Ershov, R. L. Sandstrom, G. O. Vaschenko, N. R. Böwering, P. Das, V. Fleurov, K. Zhang, S. N. Srivastava, I. Ahmad, C. Rajyaguru,
S. De Dea, W. J. Dunstan, P. Baumgart, T. Ishihara, R. Simmons, R. Jacques, R. Bergstedt, P. Porshnev, C. Wittak, R. Rafac, J. Grava, A. Schafgans, Y. Tao, B. La Fontaine, and S. E. Richardson
Cymer Inc., 17075 Thornmint Ct., San Diego, CA, 92127, USA
2012
EUVL
Symposium
Brussels
Belgium
1. LASER-PLASMA SOURCE CONFIGURATION
3. POWER ROADMAP
2. 8. COLLECTOR LIFETIME
9. SUMMARY
5. DEBRIS MITIGATION
6. DROPLET STABILITY
HVMI FIELD PERFORMANCE‘
In the Field: 9-13W Average Power with <0.5% Dose Stability
• SEMI E10 availability of sources in field approximately ~60%
• Droplet stability <3nm for 80% of days YTD
• Capability for >100 wafers per day throughput
Improved droplet stability with new droplet generator steering
(σy, σz: 2.8, 3.2 to 1.1, 1.3 μm)
MTBS increasing, Uptime in slight decline
(SEMI E10 data)
158W raw power and 190W peak raw power
shown in low duty cycle demonstration on LT1
~1.9 mJ EUV per pulse demonstrated at 50kHz
on Pilot 7, equivalent to 90W EUV power
4. EUV POWER SCALING
EUV POWER CAPABILITY DEMO
2012 International Symposium on EUVL: Brussels, Belgium October 1, 2012
DROPLET GENERATOR STEERING IMPROVEMENTS
Tin cleaning during source operation
Major Improvements to Collector Lifetime
• 10 HVM I sources installed and operational
• HVM I source EUV average power ~9-13W in field with better than <0.5%
dose stability and capability of >100 wafers per day productivity
• Collector lifetime of 45 billion pulses achieved in field
• 50W expose power demonstrated with closed loop control for over five
hours of continuous operation; up to 90W in-burst power demonstrated;
160W peak raw power shown on development tool
• First HVM II source for ASML NXE 3300 scanner is delivered, integration of
the next several is in process
This work is supported by our technology partners:
IMPROVED COLLECTOR LIFETIME IN FIELD Three major subsystems
of source architecture:
- Drive Laser
- Beam Transport System
- Source Vessel
HVM II oriented at a steeper angle than HVM I,
enabling ~2x higher optical transmission
in scanner
Additional power amplifier on HVM II system
enables higher laser power than HVM I
Source
Vessel
Beam Transport
System
Drive
Laser
RF Generators
Heat
Exchangers
HVM I HVM II
HVM II
MULTIPLE MLM COATING TESTS IN PARALLEL
Collector sample holder
(54 samples)
HVM I
Source Model HVM I HVM II
Average Laser Power (kW) 20 23 24 31 43
In-Band CE (%) 2.0 2.0 2.5 2.5 3.0
Clean EUV Power (W) 60 80 125 160 250
0 20 40 60 80 100 120 140 160 180 200
0
250
500
750
1000
Freq
uenc
y
EUV Power @ IF (W)
158W
24 kW CO2 Power at 3% DC for >15 minutes
Collector sample holder
(92 samples)
45 Bp 0 Bp
STABILITY MAINTAINED WITH REP RATE INCREASE
Repetition rate can be increased to >60kHz without disrupting next droplet
(Image shows 30 um droplets at 120 kHz with 500 um droplet spacing)
Near-linear laser power scaling up to 85% duty
cycle shown on both Pilot 7 and 9
0
20
40
60
80
100
0
10
20
30
40
20
12
06
20
12
10
20
12
14
20
12
18
20
12
22
20
12
26
20
12
30
20
12
34
Up
time
(%)
MT
BS
(h
ou
rs)
ISO Week
Availability Performance 13-week rolling average of 5 field sites
MTBS
Uptime0%
20%
40%
60%
80%
100%
0
5
10
15
20
0.6
5
3.1
5
5.6
5
8.1
5
10
.65
13
.15
15
.65
18
.15
20
.65
23
.15
25
.65
28
.15
30
.65
33
.15
Fre
qu
en
cy
Daily Y Droplet Stability (1-σ)
Droplet Stability Daily average at 5 field sites
Frequency
Cumulative %
Drive Laser for HVM II
HVM I
Architecture
~1.9mJ EUV pulse energy and 158W EUV power demonstrated on pilot sources at Cymer
• ~2x increase in lifetime, compared to six months prior
• No degradation in collector reflectivity up to 40 Bp
~2x improved
capacity for
testing multiple
MLM coatings in
parallel
0 20 40 60 80 1000
2000
4000
6000
8000
10000
12000
14000
16000
Power P7 (W)
Power P9 (W)
La
ser
Po
we
r, W
att
Duty Cycle, %
0.006 0.008 0.010 0.012 0.0140.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
EU
V p
uls
e e
ne
rgy,
mJ
Time, sec
EUV pulse energy
LASER POWER ROLL-OFF EUV PULSE ENERGY
Photos of collector sample holder and far-field EUV images of samples under test
(54 sample holder left, 92 sample holder right)
New steering leads to improved dose stability SEM image of sample
before installation into
source chamber with 32 nm
thick layer of tin deposited
P-SO-01
SEM image of sample
above after source
operation, thickness of tin is
2 nm, measured with
X-Ray Fluorescence (XRF)
EUV distributions
measured by scanner
