2019.07

INTERSIL SPACE PRODUCTSHighly Reliable, Efficient, Accurate Radiation Hardened and Radiation Tolerant ICs

INTERSIL SPACE ICsHighly reliable, efficient and accurate radiation-hardened ICs for space applications and other radiation environments.

WHEN FAILURE IS NOT AN OPTION™

CONTENTS

Rad-Hard QML SMD ............................. 04

Rad-Hard and Rad-Tolerant FPGA Power Solutions ......................... 05

Rad-Hard Power .................................... 06

Rad-Hard Analog ................................... 08

Radiation-Tolerant Plastic-Package ICs ............................. 10

Reference Designs ............................... 11

02-03

Intersil (now Renesas) history and experience in the space and defense industries spans almost seven decades

beginning with the founding of Radiation, Inc. in 1950. Today, we continue to support and release new SMD-

based, Class-V/Q radiation hardened (rad hard) products for Hi-Reliability, and Space marketplaces.

The low dose rate ionizing dose response of semiconductors has become a key issue in space applications.

We are addressing this changed market by wafer-by-wafer low dose rate acceptance testing as a complement

to current high dose rate acceptance testing.

All of our SMD products are MIL-PRF-38535/QML compliant and are 100% burned in.

By leveraging our latest technology for the consumer marketplace, Intersil space products group is releasing

Class V/Q products that are revolutionizing the Hi-Reliability and Space marketplaces.

Seven Decades of Flight Experience

Assured Product Supply

Long life cycles ensure steady flow of product. We still support customer programs with products in production for over 40 years.

Intersil Space IC BenefitsHighest Standards

As a major supplier to the military and aerospace industries, our Intersil product development methodologies reflect experience designing products to meet the highest standards for reliability and performance in challenging environments. Intersil products can be found in virtually every satellite shipped into space.

All products are MIL-PRF-38535/QML compliant All products are 100% burned in Consistent design and manufacturing in our

MIL-PRF-38535-qualified facility in Palm Bay, Florida We are one of only a few RHA Defense Logistics Agency

(Land and Maritime) QML suppliers All products are fully Class V (space level) compliant All products are on individual DLA SMD drawings

Reliable, Proven Supply Chain

Proven proprietary processes and package technologies, shipping over 1 billion ICs per year.

Strong technology development – Proprietary process and package technologies

Multi-sourcing strategy – Sourcing from multiple leading-edge semiconductor foundries

& assembly/test partners ensures a steady product supply and reduced risk

Industry-leading quality & reliability metrics – Billion+ ICs shipped every year – Less than 1.0 DPPM (defective parts per million) and improving – Decades of experience handling military/space products and

delivering world-class quality and reliability metrics – ISO/TS16949 and AEC-Q100 – MIL-PRF-38535 compliant and 100% burned in

All EH product shipments will now come with Group C and E variables data in the data package.

STANDARD DATA PACKAGE

RAD-HARD QML SMD

Class Q Class V

Nomenclature, ExampleRH Packaged

PartRH Packaged Part

EH Packaged Part

RH Die - Authorized Die Processors Only

EH Die - Authorized Die Processors Only

Part Types "RH-8" "RHQ"

XXXXRH-8 in the part #

"MSR" "NSR" “RHV"

"RH-Q" XXXXRH-Qin the part #

"EHV" "EH-Q" XXXXEH-Q

in the part #

HS0-XXXXRH-QIS0-XXXXRH-QISL7XXXXRHVX

"HSR" or "HMSR" in the part #

HS0-XXXXEH-QIS0-XXXXEH-QISL7XXXXEHVX

in the part #

Shipper/Pack Slip X X X X X

P.O. Number X X X X X

Customer Part Number, Rev (as applicable on the P.O.) X X X X X

Intersil Part Number X X X X X

Lot Date Code / Trace Code X X X

Lot Number X X X X X

Quantity X X X X X

Certificate of Conformance X X X X X

Screening Attributes Data X X X X

Post seal thru end of 100% screening operations X X

Test Operations X X

Test Methods X X

Quantity of units in/out by operation X X

Date of each test X X

PDA as applicable X X

Visual Inspection X X X X

Document Review X X X X

Screening Variables & Delta Data - Variables data for all read/record and/or delta operations pre/post burn-in @25C are provided on electronic media.

X X

Group A Attributes (located in Screening Attribute Data if performed) X X

Group B Attributes Summary X X

Group C Attributes Summary X X

Group C Variables & Delta Data - Variables data for all read/record and/or delta operations pre/post life test are provided on electronic media.

X

Group D Attributes Summary X X

Group E Variables Data for HDR & LDR - Variables data for all read/record operations pre/post rad are provided on electronic media.

X X

SEM C of C & Photos (if performed) X X X X

Radiation C of C (High Dose Rate and/or Low Dose Rate) HDR HDR HDR & LDR HDR HDR & LDR

X-Ray Report (Film kept on file and available on request. Request must be documented on P.O.)

X X

04-05

RAD-HARD AND RAD-TOLERANT FPGA POWER SOLUTIONSDue to its flexibility in design and cost effectiveness compared to ASICs, FPGA based systems have become increasingly common in space applications as the requirement to do more on board processing is increasing.

Equally important is the power solution of these multi-rail digital loads. The power supply must be stable and efficient even in the harsh environments of space which includes total ionizing dose and single event effects. Couple-in the need for a smaller, light-weight power solution and you will find us at the forefront developing leading edge point-of-load (POL) regulators that meet the demands to power these high performance FPGA's.

POWER SOLUTION FOR RADIATION TOLERANT FPGA

Core &SERDES_IO

Rad Tolerant FPGA

ISL70003ASEH ISL70002SEH

ISL75051ASEH

ISL75051ASEH

ISL70001ASEH

ISL70003ASEH

VDD_PLL

SERDES_PLL

Memory Bank

DDR VDDQ

DDR VTT

1.2V

3.3V

3.3V 2.5V

2.5V

1.8V

0.9V

5.0V12V 5.0V3.3V

3.3V

3.3V

ISL70321SEH

EN1

EN2

EN3EN4

ISL70002SEHPGOOD

UP/INIT

EN2

ISL75051ASEHEN4EN1

EN3

EN4

Switching Regulators

Device Description VIN RangeSwitching Frequency

SYNC Capable

Current Sharing

High Dose Rate (HDR)

Low Dose Rate (LDR)

Single Event Effects LET MeV.cm2/mg

Qualification Level

ISL70001ASEH6A, Radiation Hardened Synchronous Buck Converter

3 - 5V 1MHz Yes No 100krad(Si) 50krad(Si) 86.4 QML Class V

ISL70002SEH18A, Radiation Hardened Synchronous Buck Converter

3 - 5V 500kHz/1MHz Yes Yes 100krad(Si) 50krad(Si) 86.4 QML Class V

ISL70003ASEH9A, Radiation Hardened Synchronous Buck Converter

3 - 13.2V 300kHz/500kHz Yes No 100krad(Si) 50krad(Si) 86.4 QML Class V

Low Dropout Regulators

Device Description VIN Range Dropout @ 1AOutput Option

Quiescent Current

High Dose Rate (HDR)

Low Dose Rate (LDR)

Single Event Effects LET MeV.cm2/mg

Qualification Level

ISL75051ASEH3A, Radiation Hardened, Positive, Ultra-Low Dropout Regulator

2.2 - 6V 65mV Adjustable 11mA 100krad(Si) 50krad(Si) 86.4 QML Class V

ISL73051ASEH3A, Radiation Hardened, Positive, Ultra-Low Dropout Regulator

2.2 - 6V 65mV Adjustable 11mA N/A 50krad(Si) 86.4 QML Class V

Power Supply Sequencers

Device Description VIN RangeQuiescent

Current

Rising/Falling Delay

PGOOD Timer

High Dose Rate (HDR)

Low Dose Rate (LDR)

Single Event Effects LET MeV.cm2/mg

Qualification Level

ISL70321SEHRadiation Hardened Quad Power Supply Sequencers

3 - 13.2V 3.5mA 2 -20ms 4 - 40ms 100krad(Si) 75krad(Si) 86.4 QML Class V

ISL73321SEHRadiation Hardened Quad Power Supply Sequencers

4 - 13.2V 3.5mA 2 -20ms 4 - 40ms N/A 75krad(Si) 86.4 QML Class V

Intersil products offer an order of magnitude better performance compared to rad-hard silicon MOSFETs.

Benefits of GaN Power Transistors

1

10

100

1000

10000

100000

0 50 100 150 200 250

FOM

(mΩ

∙ nC

)

VDS (V)

RH Si MOSFETs vs GaN FETs

MOSFET GaNExpon. (MOSFET) Expon. (GaN)

Radiation Hardened GaN Power Solutions

Enabling Smaller, Efficient Power Solutions for Space

The ISL70040SEH low side Gallium Nitride (GaN) field effect transistor (FET) driver and ISL70023SEH and ISL70024SEH GaN FETs enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

ISL70023SEH and ISL70024SEH GaN FETs

Very low RDSON: – 5mΩ (typ) - ISL70023SEH – 45mΩ (typ) - ISL70024SEH

Ultra-low total gate charge: – 14nC (typ) - ISL70023SEH – 2.5nC (typ) - ISL70024SEH

SEE hardness at LET 86MeV•cm2/mg – ISL70023SEH, VDS = 100V, VGS = 0V – ISL70024SEH, VDS = 160V, VGS = 0V

Full military temperature range operation – TA = -55°C to +125°C – TJ = -55°C to +150°C

ISL70040SEH GaN FET Driver Wide operating voltage range from 4.5V to 13.2V Up to 14.7V logic inputs (regardless of VDD level),

inverting and non-inverting inputs Full military temperature range operation

– TA = -55°C to +125°C – TJ = -55°C to +150°C

Radiation hardness assurance (wafer-by-wafer): – High Dose Rate (HDR) (50-300rad(Si)/s):100krad(Si) – Low Lose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)

SEE hardness at LET = 86MeV•cm2/mg: – No SEB/SEL, VDD = 16.5V – No static input SET, VDD = 4.5V and VDD = 13.2V

Electrically screened to DLA SMD 5962-17233

RAD-HARD POWERRadiation Hardened

GaN FETsPart Number VDS IDS RDSON Qg HDR LDR SEB/L

ISL70023SEH 100V 60A 5mΩ 14nC 100krad(Si) 75krad(Si) 86.0MeV•cm2/mg

ISL73023SEH 100V 60A 5mΩ 14nC - 75krad(Si) 86.0MeV•cm2/mg

ISL70024SEH 200V 7.5A 45mΩ 2.5nC 100krad(Si) 75krad(Si) 86.0MeV•cm2/mg

ISL73024SEH 200V 7.5A 45mΩ 2.5nC - 75krad(Si) 86.0MeV•cm2/mg

GaN FET DriverPart Number VDD Range Configuration Peak Current Rise/Fall Time HDR LDR SEB/L

ISL70040SEH 4.5V to 13.2V Low Side 4A 5.5ns / 4.0ns 100krad(Si) 75krad(Si) 86.0MeV•cm2/mg

ISL73040SEH 4.5V to 13.2V Low Side 4A 5.5ns / 4.0ns - 75krad(Si) 86.0MeV•cm2/mg

06-07

Power Supply Sequencers

Radiation-Hardened Quad Power Supply Sequencers

The ISL70321SEH and ISL73321SEH quad power supply sequencers are designed to drive point-of load (POL) regulators that power high performance FPGAs and complex, multi-rail power systems. Highly scalable, up to four power supplies can be fully sequenced by a single device or multiple devices can be easily cascaded to sequence an unlimited number of power supplies.

The highly integrated sequencers provide critical reliability features, and reduce bill of materials cost by replacing discrete solutions that employ several comparators, resistors, and capacitors.

Wide operating voltage range, 3V to 13.2V Single resistor sets the rising and falling delay Power-off POLs in reverse order or simultaneously Precision voltage monitoring

– 600mV ±1.5% threshold voltage over temperature and radiation Full military temperature range operation

– TA = -55°C to +125°C – TJ = -55°C to +150°C Simple, Scalable & Robust!

VO1

VO2

VO3

18

17

16

15

14

1

2

3

4

5

VDD

INIT

UP

VM1

VM2

VCC5

EN1

EN2

EN3

EN4 13

12

11

6

7

8

VM3

VM4

PGTMR

DONE

KILL

GND 109 TDLY

VREF

5V

13.7k

324k4.02k

7.5k4.12k

6.98k

POL-1ENABLE

VO1 = 1.0V

POL-2ENABLE

VO2 = 1.8V

POL-3ENABLE

VO2 = 3.3V

10k 10k 10k

10k 10k

470nF

220nF

0.47µF VCCINT

VCCAUX

VCCO

10k

10k

ISL70321SEH

16-Channel Current Driver with Integrated Decoder

The ISL72814SEH integrates the decoder, input level shifter, and 16 current driver arrays in a single monolithic IC. The device allows satellite manufacturers to significantly increase system capacity and reduce the solution footprint. These devices are ideal for driving RF switches in the payload of communication satellites as well as driving switches and latches in telemetry and control systems.

Integrated 4-bit to 16-channel decoder and input level shifter High current outputs up to 700mA High voltage outputs up to 42V VCC supply range of 3V to 13.2V Ultra-low VCE saturation of 1.35V at 500mA Extended operating temperature range of -55°C to +125°C

Increase System Density

Sequencing Solution for High-Processing High-Power FPGAs

x 2

x 1

Level Shifter8-Channel Current Driver

Solution with Current Driver with Integrated Decoder

Discrete Solution

4-Bit to 16-Channel Decoder

GND

A1

A2

A3

EN

A0

VCC

CH15

CH0

0

15

1

VCC

GND

5kΩ

5kΩ

COM

VCC

2kΩ

2kΩ

16-Channel Decoder Level Shifter Driver Array Clamp Diode

ISL72814SEH

Source Drivers

DeviceNumber of Channels

Max Channel Voltage

Maximum ICE VCE (SAT)

ICEX (Leakage Current)

Level Shifter Integrated Decoder HDR LDR Package

ISL72814SEH 16 42V 700mA 1.35V @ 500mA 90nA Yes Yes, (4:16 Decoder) 100krad(Si) 75krad(Si) 28 Ld CFP

ISL73814SEH 16 42V 700mA 1.35V @ 500mA 90nA Yes Yes, (4:16 Decoder) N/A 75krad(Si) 28 Ld CFP

ISL72813SEH 32 42V 600mA 1.45V @ 500mA 40nA Yes Yes, (5:32 Decoder) 100krad(Si) 50krad(Si) 44 Ld CLCC

Source Driver Family

CAN Network Significantly Reduce Wiring

CAN Bus Transceivers

RAD-HARD ANALOGRadiation Hardened

Industry’s First Rad Tolerant 3.3V CAN Transceivers for Satellite Communications

The ISL7202xSEH CAN transceivers provide reliable serial data transmission between a CAN controller and CAN bus at speeds up to 1Mbps. Up to 120 ISL7202xSEH ICs can be connected to a single CAN bus to reduce cabling/harness size, weight and power (SWAP) costs, allowing system engineers to increase satellite functionality and eliminate the extra cabling and tradeoffs associated with current point-to-point interface solutions.

ECU

I/O I/O

Device

Device

ECU

Without CAN With CAN

CAN Networks Significantly Reduce Wiring

ISL72026SEH – Loopback feature which provides a node diagnostic mode

ISL72027SEH – Split mode feature which helps improve EMI/EMC

ISL72028SEH – Low power shutdown mode

Product Speed SelectionsLoopback Feature VREF Output Listen Mode Shutdown Mode HDR 100krad LDR 75krad Package

ISL72026SEH 1Mbps /250kbps/125kbps Yes No Yes No No Yes 8 Ld CFP

ISL72027SEH 1Mbps /250kbps/125kbps No Yes Yes No No Yes 8 Ld CFP

ISL72028SEH 1Mbps /250kbps/125kbps No Yes No Yes No Yes 8Ld CFP

ISL72026ASEH 1Mbps /500kbps/250kbps Yes No Yes No No Yes 8 Ld CFP

ISL72027ASEH 1Mbps /500kbps/250kbps No Yes Yes No No Yes 8 Ld CFP

ISL72028ASEH 1Mbps /500kbps/250kbps No Yes No Yes No Yes 8 Ld CFP

ISL71026M 1Mbps /250kbps/125kbps Yes No Yes No Rad Tolerant 14 Ld TSSOP

CAN Bus Transceivers

08-09

Complete Space Grade Analog Signal Chain

Current Sources

Instrumentation Amplifiers

Radiation Hardened 100µA and 1mA Precision Current Sources

The ISL70591SEH, ISL73591SEH, ISL70592SEH, and ISL73592SEH are radiation hardened precision 100µA and 1mA current source ICs. The devices have excellent accuracy of ±1% over a wide operating voltage range of 3V to 40V and over a temperature range of -55°C to +125°C. Fabricated with the Renesas proprietary PR40 Silicon On Insulator (SOI) process, the devices are immune to single event latch-up.

Device

Operating Voltage Range Output Current

Current Temperature Coefficient

Initial Accuracy (+V = 20V at

+25°C): Output ImpedanceHDR

100krad(Si)LDR

75krad(Si) Temperature Range Package

ISL70591SEH 3V to 40V 100µA 2.25nA/°C ±0.34% 189MΩ (typical) Yes Yes -55°C to +125°C 4 Ld Ceramic Flatpack

ISL73591SEH 3V to 40V 100µA 2.25nA/°C ±0.34% 189MΩ (typical) N/A Yes -55°C to +125°C 4 Ld Ceramic Flatpack

ISL70592SEH 3V to 40V 1mA 19nA/°C ±0.30% 14MΩ (typical) Yes Yes -55°C to +125°C 4 Ld Ceramic Flatpack

ISL73592SEH 3V to 40V 1mA 19nA/°C ±0.30% 14MΩ (typical) N/A Yes -55°C to +125°C 4 Ld Ceramic Flatpack

Device Operating

Voltage RangeInput Bias

Current Input Offset

CMRR and PSRR

DifferentialInput Output

Gain ErrorLow Voltage Temperature Range Package

ISL70517SEH ±4V to ±18V 0.2nA 30μV 120dB Yes Single-Ended ±0.2 -55°C to +125°C 24 Ld Flatpack

ISL70617SEH ±4V to ±18V 0.2nA 30μV 120dB Yes Differential ±0.1 -55°C to +125°C 24 Ld Flatpack

Rad-Hard Current Sources

Rad-Hard Instrumentation Amplifiers

36V In-Amp with Integrated ADC Driver

The ISL70617SEH rad hard in-amp integrates a rail-to-rail output differential ADC driver to provide the industry’s highest sensor signal processing performance for communication satellites. Its high integration and best-in-class performance reduces system size, weight and power (SWAP) costs, and speeds time to market.

The ISL70517SEH joins the ISL70617SEH, and offers similar features but implements a differential input and rail-to-rail single-ended output.

Low input offset of 30µV, and low input bias current of 0.2nA Programmable gain from 0.1 to 10,000 via two external resistors Excellent CMRR and PSRR of 120dB typical for attenuating, gaining and

filtering sensor signals to improve signal quality Wide operating range from ±4V to ±18V Low dose rate (0.01rad(Si)/s) radiation tolerance of 75krad(Si)

IN+

IN-

ISL70617SEH

RIN+RININ+

IN-

+RFB

-RFB

VCC

VEEVEO

RFB

ISL70617SEH

ISL71830SEH

+18V

+18V

-18V

-18V

5V

SIGNAL WITHHIGH VCM

HIGH VINSIGNAL

5V

ISL71090SEH25

GAIN = 10

GAIN = 0.1

VCC

IN

VCC

REFVGND

ISL71090SEH25GND

RHADC

-RIN

+VOUT

VCMOVEO

VEE-RFB

+RFB

-RIN

+RINRIN

RFB

VCCVCO

+VFB

GND

ISL71830SEH

VCC

-VFB-VOUT

+VOUT

VCO+VFB

-VFB-VOUT

VCMO

Ch 1

Ch 16

Ch 1

Ch 16

RADIATION-TOLERANT PLASTIC-PACKAGE ICs

Radiation Tolerant

Rad-Tolerant Analog Rad-Tolerant Power

CAN Bus TransceiverISL71026M 3.3V CAN Transceiver, 1Mbps, Listen Mode, Loopback

Operational AmplifiersISL71444M 40V Quad Rail-to-Rail Input-Output, Low-Power Op Amp

ISL71218M Dual 36V Precision, Rail-to-Rail Output, Low-Power Op Amp

Voltage ReferencesISL71010B25 Ultra-Low Noise, 2.5V Precision Voltage Reference

ISL71010B50 Ultra-Low Noise, 5V Precision Voltage Reference

Digital IsolatorsISL71610M Radiation Tolerant Passive-Input Digital Isolator

ISL71710M Radiation Tolerant Active-Input High Speed Digital Isolator

PWM ControllerISL71043M Radiation Tolerant Single-Ended Current Mode PWM Controller

Switching RegulatorISL71001M 6A Synchronous Buck Regulator with Integrated MOSFETs

GaN FET DriverISL71040M Radiation Tolerant Low-Side GaN FET Driver

The ISL71xxxM family of radiation-tolerant plastic-package ICs is designed to support the emerging field of small satellites

that will provide solutions such as high-speed Internet connections to hundreds of millions of users in communities,

governments, and businesses worldwide. Fleets of hundreds of small satellites will create mega-constellation networks

to deliver broadband Internet links from low Earth orbit (LEO) to every corner of the globe, including rural areas without

wireless connectivity access.

Our rad-tolerant plastic packaging flow leverages the company’s more than 60 years of spaceflight experience developing

rad hard (>75krad) and rad-tolerant (<75krad) products for extremely harsh environments. The upfront radiation effects

characterization and AEC-Q100 automotive-like qualification gives customers the utmost confidence to design Intersil

radiation-tolerant plastic parts into cost-sensitive small satellites for LEO mission profiles up to five-years. The ISL71xxxM

are also well suited for high altitude (>40km) avionic systems, launch vehicles that are prone to heavy ions, and medical

equipment where radiation is a concern.

Cost Effective Solutions for Short Duration Low Earth Orbit (LEO) Mission Profiles

10-11

ISL71040MEV1Z Evaluation Board

Part Number ISL71040M

Description

The ISL71040MEV1Z evaluation platform is intended to evaluate the ISL71040M GaN FET driver in a low side configuration driving a 100V GaN FET. The ISL71040M is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. It operates across a supply range of 4.5V to 13.2V and offers both non-inverting and inverting inputs to satisfy non-inverting and inverting gates drive within a single device.

Doc Number R12UZ0042EU0100

Part Number ISL73040SEH, ISL73024SEH, ISL71610M

Description

The ISL73040SEHEV4Z evaluation board demonstrates how to build a half bridge power stage with the ISL73040SEH low side GaN driver and the ISL73024SEH 200V GaN FET. The ISL73040SEH has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of the ISL73024SEH GaN FET. The ISL73024SEH is a 200V GaN FET capable of 7.5A drain current.

Doc Number UG186

Part Number ISL70002SEH

Description

The demonstration board shows the ISL70002SEH in a dual current sharing configuration to support the low voltage, high current power requirements of the core rails of high processing FPGAs, ASICs or processors. This board accepts an input voltage range of 3V-5V and is configured to supply an output voltage of 950mV and 38A of output current. The converter achieves 87% peak efficiency switching at 500kHz and provides excellent current sharing accuracy of +/-2% (typ.) from 5A to 38A.

Doc Number UG166

ISL73040SEHEV4Z Evaluation Board

ISL70002SEHDEMO1Z Demonstration Board

Radiation Tolerant Low Side GaN FET Power Stage

100V Half Bridge GaN Power Stage

FPGA, ASIC and Processor Core Power Solution

REFERENCE DESIGNSRenesas offers reference designs to help solve our customers' system level application challenges in space-grade systems. For more information, visit www.renesas.com/space or contact your local sales office.

© 2019 Renesas Electronics Corporation. All rights reserved.

Document No. R30CA0174EU0300