INFN LNS Catania – November 2011 Experimental …td/Davinson_SPES_Catania_101111.pdf · ASIC...
Transcript of INFN LNS Catania – November 2011 Experimental …td/Davinson_SPES_Catania_101111.pdf · ASIC...
TomDavinson
School of Physics & Astronomy
Fir
st
SP
ES
Sch
oo
l o
n E
xp
eri
men
tal T
ech
niq
ues
wit
h R
ad
ioacti
ve B
ea
ms
INF
N L
NS
Cata
nia
–N
ov
em
ber
2011
Ex
pe
rim
en
tal C
ha
lle
ng
es
Le
ctu
re 3
: F
utu
re S
ys
tem
s
THE
UNIVERS
I TY
OF
EDINBU
RGH
Outline
Applic
ation S
pecific
Inte
gra
ted C
ircuits (
AS
ICs)
AID
AM
US
T II
HIN
P16C
/32C
Ne
w e
xperim
enta
l te
chniq
ues
HE
LIO
S
Case for ASICs
•F
utu
re N
ucle
ar
Ph
ysic
s A
pplic
ations
dete
cto
r are
as 1
00-1
000s c
m2
str
ip p
itches ~
0.5
mm
1000s c
hann
els
of
instr
um
enta
tion r
eq
uire
d•V
LS
I IC
technolo
gy
(CM
OS
)lo
w n
ois
ehig
h d
ensity
low
po
we
rlo
w (
per
ch
ann
el) c
ost
…in
princip
le
•W
idely
use
dP
art
icle
Ph
ysic
sS
pace
X-r
ay
imagin
g•
Princip
al app
lications
Min
ima
lly io
nis
ing p
art
icle
s (
MIP
s),
X-r
ays
an
d lo
w e
nerg
y γ-
rays
Em
phasis
on p
ositio
n info
rmation (
e.g
. ~
10
µm
)E
xce
llent
S/N
ratios
hig
h e
ffic
iency
dete
ction
low
rate
‘fa
lse’hits …
import
ant
for
larg
esys
tem
s
ASICs: Reality Check
The B
ad N
ew
s (
and t
here
’s q
uite a
bit)…
•C
MO
S d
esig
n e
nviro
nm
ent
passiv
es t
em
pera
ture
& v
olta
ge d
ep
end
ent
are
a c
onstr
ain
s c
om
pone
nt
valu
es
para
sitic
eff
ects
poor
contr
ol of
absolu
te c
om
ponent
valu
es
•M
odelli
ng em
piric
al data
requir
ed
tim
e c
onsum
ing
•E
ntr
y costs
MP
W –
share
d N
RE
costs
, hig
her
pro
ductio
n c
osts
dedic
ate
d –
hig
h N
RE
costs
, lo
wer
pro
ductio
n c
osts
•R
isk
•C
MO
S p
roduction p
rocess lifetim
e•
Lim
ited d
ynam
ic r
ange ~
2,0
00:1
(cf.
RA
L108 ~
100,0
00:1
)•
AS
IC c
hannel pitch c
onstr
ain
s d
ete
cto
r str
ip p
itch
The r
ealit
y is t
hat
there
are
sig
nific
ant
desig
n a
nd e
ngin
eeri
ng
limitatio
ns
…com
pro
mis
e w
ill b
e n
ecessary
.
AID
A:
intr
od
ucti
on
Advance
d I
mpla
nta
tion D
ete
cto
r A
rra
y (A
IDA
)
UK
colla
bora
tio
n:
Univ
ers
ity o
f E
din
burg
h,
Un
ivers
ity o
f Liv
erp
ool,
ST
FC
Dare
sbu
ryLabora
tory
& S
TF
C R
uth
erf
ord
Apple
ton L
abora
tory
•S
uperF
RS
/FA
IR•
Exo
tic n
ucle
i ~
50 –
200M
eV
/u•
Impla
nt
–deca
y corr
ela
tions
•M
ulti-G
eV
imp
lanta
tio
n e
vents
•S
ubsequ
ent
low
-energ
y deca
ys•
Tag e
vents
for
gam
ma a
nd n
eutr
on d
ete
cto
r arr
ays
Dete
cto
r: m
ulti-
pla
ne S
i D
SS
D a
rra
yw
afe
r th
ickness 1
mm
8cm
x 8
cm
(1
28
x12
8 s
trip
s)
or
24cm
x 8
cm
(384
x12
8 s
trip
s)
Instr
um
enta
tio
n:
AS
IClo
w n
ois
e (
<12
keV
FW
HM
), low
thre
shold
(0.2
5%
FS
R)
20G
eV
FS
R p
lus
( 20M
eV
FS
R o
r1G
eV
FS
R)
fast
overload r
ecovery
(~
µs)
spectr
oscop
y p
erf
orm
ance
tim
e-s
tam
pin
g
ASIC Design Requirements
Sele
cta
ble
ga
in20
1000
2000
0M
eV
FS
RLo
w n
ois
e12
600
5000
0keV
FW
HM
energ
y m
easure
ment
of
impla
nta
tion a
nd d
ecay e
vents
Sele
cta
ble
thre
shold
< 0
.25 –
10%
FS
Robserv
e a
nd m
easure
low
ene
rgy β
, β
dete
ction e
ffic
iency
Inte
gra
l no
n-lin
earity
< 0
.1%
and d
iffe
rential non-l
ine
arity
< 2
% f
or
> 9
5%
FS
Rspectr
um
ana
lysis
, calib
ration,
thre
shold
dete
rmin
atio
n
Auto
nom
ous o
verloa
d d
ete
ction &
recovery
~ µ
sobserv
e a
nd m
easure
fast
impla
nta
tion –
de
cay c
orr
ela
tion
s
Nom
inal sig
nal pro
cessin
g t
ime <
10
µs
observ
e a
nd m
easure
fast
de
cay –
decay
co
rrela
tio
ns
Receiv
e (
transm
it)
tim
esta
mp d
ata
corr
ela
te e
vents
with d
ata
fro
m o
ther
dete
cto
r syste
ms
Tim
ing t
rigger
for
coin
cid
ence
s w
ith o
ther
dete
cto
r sys
tem
sD
AQ
rate
man
age
me
nt,
neutr
on T
oF
Schematic of ASIC Functionality
Note
–A
SIC
will
als
o e
valu
ate
use o
f dig
ital sig
na
l pro
cessin
g
Pote
ntial a
dva
nta
ges
•deca
y –
deca
ycorr
ela
tio
ns t
o ~
200ns
•puls
e s
ha
pe a
naly
sis
•balli
stic d
eficit c
orr
ection
•A
nalo
gue in
pu
ts left
edge
•C
ontr
ol/outp
uts
rig
ht
edge
•P
ow
er/
bia
s t
op a
nd b
ott
om
•16 c
hann
els
per
AS
IC
•P
roto
types d
eliv
ere
d M
ay
20
09
MP
W r
un
100 d
ies d
eliv
ere
d
•F
unctional te
sts
at
ST
FC
RA
L O
K
court
esy S
TF
C R
AL
AID
A A
SIC
: T
op
level d
esig
n
AID
A A
SIC
court
esy S
TF
C R
AL
AID
A A
SIC
sim
ula
tio
n:
exam
ple
01
23
45
67
89
10
11
12
13
14
15
I_LF
fdbk=
0
I_LF
fdbk=
6.4
I_LF
fdbk=
12.8
1.0
0E
-04
1.1
0E
-04
1.2
0E
-04
1.3
0E
-04
1.4
0E
-04
1.5
0E
-04
1.6
0E
-04
1.7
0E
-04
1.8
0E
-04
1.9
0E
-04
2.0
0E
-04
No
ise
[V
rm
s]
Sh
ap
ing
Tim
e (
fro
m 0
.5u
s to
8u
s)
AID
A r
ms N
OIS
E:
I_L
Ffd
bk v
s S
hap
ing
Tim
e (
Cd
et=
4.7
pF
, Ib
ias_p
reA
mp
=8)
1.9
0E
-04-2
.00E
-04
1.8
0E
-04-1
.90E
-04
1.7
0E
-04-1
.80E
-04
1.6
0E
-04-1
.70E
-04
1.5
0E
-04-1
.60E
-04
1.4
0E
-04-1
.50E
-04
1.3
0E
-04-1
.40E
-04
1.2
0E
-04-1
.30E
-04
1.1
0E
-04-1
.20E
-04
1.0
0E
-04-1
.10E
-04
Optim
um
AS
IC c
ontr
ol para
mete
rs identified b
y sim
ula
tion
court
esy
ST
FC
RA
L
AS
IC C
on
tro
ls
Fix
ed
hig
h-e
ne
rgy (
HE
C)
eve
nt
(61
0p
C/1
3.9
Ge
V)
follo
we
d b
y t
hre
e M
EC
eve
nts
(1
5p
C,
30
pC
, 4
5p
C):
th
e A
SIC
re
co
ve
rs a
uto
no
mo
usly
fro
m t
he
ove
rlo
ad
of
the
L-M
E c
ha
nn
el a
nd
th
e s
eco
nd
eve
nt
is r
ea
d c
orr
ectly.
Inp
ut
sig
nals
(vo
ltage s
tep
capaciti
ve-c
ouple
d)
Pre
am
p b
uff
ere
d o
utp
ut
(Low
-Med
ium
Energ
y C
hannel)
“R
an
ge”
sig
nal
Hig
h =
hig
h-e
nerg
y channel
activ
e
“D
ata
Read
y”
sig
nal
Hig
h E
nerg
y (
HE
C)
+ M
ed
ium
En
erg
y (
ME
C)
Fir
st
va
lue
(co
nsta
nt)
giv
en
by
the
hig
h-e
ne
rgy c
ha
nn
el (H
EC
), s
eco
nd
by t
he
me
diu
m
en
erg
y c
ha
nn
el (M
EC
)
Inp
ut
sig
nals
(vo
ltage s
tep
capaciti
ve-c
ouple
d)
“R
an
ge”
sig
nal
Hig
h =
hig
h-e
nerg
y channel
activ
e
“D
ata
Read
y”
sig
nal
An
alo
go
utp
ut
(peak-h
old
m
ulti
ple
xed o
utp
ut)
Hig
h E
nerg
y (
HE
C)
+ M
ed
ium
En
erg
y (
ME
C)
FE
E A
ss
em
bly
Seq
uen
ce
AID
A h
ard
ware
•S
yste
ms inte
gra
ted p
rod
uctio
n h
ard
wa
re a
vaila
ble
-bench &
in-b
eam
tests
in p
rogre
ss
Mezzanin
e:
4x
16 c
ha
nne
l A
SIC
sC
u c
over
EM
I/R
FI/lig
ht
scre
en
coolin
g
FE
E:
4x
16-b
it A
DC
MU
X r
ea
dout
(not
vis
ible
)8x
octa
l 50M
SP
S 1
4-b
it A
DC
sX
ilin
x V
irte
x5
FP
GA
550M
Hz P
ow
erP
C 4
40 C
PU
core
–Lin
ux
OS
Gbit
eth
ern
et,
clo
ck,
JT
AG
port
sP
ow
er
FE
E w
idth
: 8cm
Pro
toty
pe –
air c
oolin
gP
roduction –
recircula
ting
coola
nt
Pro
toty
pe A
IDA
En
clo
su
re
-D
esig
n d
raw
ings (
PD
F)
availa
ble
htt
p://w
ww
.eng.d
l.ac.u
k/s
ecure
/np-w
ork
/AID
A/
AIDA Mechanical
•M
echanic
al de
sig
n f
or
8cm
x 8
cm
and
24cm
x 8
cm
DS
SS
Ds
is c
om
ple
te
•E
valu
ate
perf
orm
ance o
f 8cm
x 8
cm
desig
n b
efo
re p
roceed
ing t
o m
anufa
ctu
reof
24cm
x 8
cm
desig
n
•D
esig
n c
om
pa
tible
with B
ELE
N, T
AS
, M
ON
ST
ER
, R
ISIN
G,
FA
TIM
A e
tc.
Ben
ch
Tests
of
Pro
toty
pe
Hard
ware
zero
inp
ut
load
(C
D=
I L=
0)
0.1
5m
V r
ms
~ 2
.5keV
rm
sS
i
INL <
0.1
% (
> 9
5%
FS
R )
Tests
with p
uls
er
dem
onstr
ating
inte
gra
l non-l
inearity
and n
ois
eperf
orm
ance o
f 20M
eV
rang
e (
LE
C)
Tests with AIDA ProductionHardware
•R
ealis
tic input
load
ing
CD
~ 6
0pF
, I L
~ 6
0nA
•E
xpecta
tion ~
12keV
FW
HM
High Energy Implantation Events
•S
IS 2
50M
eV
/u 2
09B
i +
degra
der
2m
m A
l +
~2m
air
•S
ignific
ant
balli
stic d
eficit e
ffects
•C
onfirm
s B
ard
elli
mo
del a
nd p
revio
us T
AM
U o
bserv
ations
•Im
plie
s p
ream
p r
isetim
efo
r h
igh e
nerg
y he
avy-
ions >
500ns
(cf.
intr
insic
pre
am
p r
isetim
e~
90ns)
AID
A:
sta
tus
•D
SS
SD
with s
ub-c
ontr
acto
r (M
SL)
-12+
8cm
x 8
cm
pro
ductio
n d
ete
cto
rs d
eliv
ery
Nove
mber
20
11
•P
roduction h
ard
ware
(A
SIC
, F
EE
Mezzanin
e P
CB
, F
EE
PC
B)
has b
ee
ndeliv
ere
d b
y sub-c
ontr
acto
rs
•A
SIC
+ F
EE
Mezzanin
e m
od
ule
assem
bly
-
12 c
om
ple
te
-65+
queued
•F
EE
PC
B Q
A a
ccepta
nce t
ests
-50 c
om
ple
te
-20 q
ueu
ed
-8 w
ith f
aults r
equir
ing f
urt
her
testing
•M
echanic
al de
sig
n a
nd infr
astr
uctu
re (
HV
, P
SU
s,
coolin
g e
tc.)
-dete
cto
r H
V,
FE
E P
SU
s,
coolin
g &
FE
E c
rate
s d
eliv
ere
d
-support
asse
mb
ly U
niv
ers
ity o
f Liv
erp
oo
l w
ork
shop
AID
A:
ou
tlo
ok
•A
IDA
pro
duction h
ard
wa
re w
as a
vaila
ble
for
com
mis
sio
nin
g o
n s
ched
ule
in 2
011/Q
3
•P
erf
orm
ance o
f 20G
eV
& 1
GeV
ranges m
ee
ts s
pecific
ation
-need t
o o
ptim
ise D
SS
SD
-FE
E c
ouplin
g f
or
20M
eV
ran
ge
-pro
gre
ss v
ery
encoura
gin
g
•B
asic
data
me
rge w
ith M
BS
successfu
lly d
em
onstr
ate
d d
uri
ng
AID
A+
LY
CC
A
test
May
20
11
-fu
rther
work
requir
ed
•C
ontinu
ing F
EE
develo
pm
ent
work
in p
rogre
ss
-D
SP
(e.g
. dig
ital C
FD
, M
WD
)
-tim
esta
mp d
istr
ibution h
ard
ware
•D
AQ
soft
ware
develo
pm
ent
work
in p
rogre
ss
-m
igra
ting inte
rface f
rom
Tcl/T
kto
XM
L/S
OA
P (
web-b
ase
d)
-contr
ol and m
anag
em
ent
of
mu
ltip
le F
EE
module
s
-tim
esta
mp-o
rdere
d d
ata
merg
e
Tra
nsla
tio
n –
AID
A is r
eady f
or
early s
cie
nce e
xperi
ments
MUST II
htt
p:/
/ipn
we
b.in
2p3.f
r/~
sep/p
roje
ts/e
xp/m
ust2
/must2
.htm
l
•N
ucle
ar
ph
ysic
s a
pplic
ation
•H
igh-e
nerg
y lig
ht
& h
eavy
ion d
ete
ction
•C
om
posite t
ele
scope (
PID
)S
i D
SS
D ∆
E-
Si(Li) E
1-
CsI(
Tl) E
2
•E
nerg
y &
tim
e s
pectr
oscop
y•
Vacuum
opera
tion
•T
oF
requirem
ents
…B
iCM
OS
technolo
gy
MUST II contd
E.P
olla
cco
et
al.,
EP
J A
25 (
2005)
287
Six
tele
scop
e a
rra
y
35keV
FW
HM
(128 c
h)
10M
eV
/u 5
8N
i +
CD
H t
arg
et
DS
SS
D +
Si(Li) o
nly
∆E
1keV
/ch,
E2keV
/ch
HiRa
G.L
.Engelet
al.,
NIM
A573 (
2007)
41
8M
.S.W
alla
ce
et
al.,
NIM
A583 (
2007)
302
•20x
65
µm
DS
SS
D ∆
E1 +
1500
µm
DS
SS
D ∆
E2
+ 4
cm
CsI(
Tl) E
part
icle
tele
scopes
are
a 6
.25cm
x 6
.25cm
•~
2000 c
hann
els
•hig
h e
nerg
y (~
65M
eV
/u)
tran
sfe
r re
actions
HIN
PC
16 (
Hea
vy
Ion N
ucle
ar
Ph
ysic
s 1
6 c
ha
nnels
) A
SIC
The Bottom Line
Pro
ject
tim
elin
e
•dom
inate
d b
y ‘d
esig
n’, s
imula
tion a
nd t
est
phases
‘if y
ou d
on
’t t
est
it,
it w
on
’t w
ork
’
Pro
ject
costs
•dom
inate
d b
y m
anpo
we
r costs
•A
SIC
cost
is a
fra
ction o
f syste
m/h
ard
ware
cost
rule
of
thu
mb
…2–3
x A
SIC
cost
…and d
id I
me
ntion d
ete
cto
rs?
ASIC Compatible Silicon Strip Detectors
•In
tegra
ted c
ou
plin
g c
apacitors
~100pF
/100V
•In
tegra
ted p
oly
-Si b
ias r
esis
tors
~1-5
0M
Ω•
Str
ip p
itch
AS
IC c
om
patib
le
•D
esig
n c
om
ple
xity
more
photo
ma
sks
hig
her
NR
E c
osts
~$40-6
0k
•P
roduction c
om
ple
xity
more
pro
cessin
g s
teps
low
er
yield
shig
her
costs
~$10-1
5k
•Larg
er
are
a (
6”
wafe
rs)
restr
icte
d r
ang
e o
f th
icknesse
s
from
MS
L t
ype H
HH
(DS
)
HELIOS
•<
2.8
5T
superc
onducting s
ole
noid
ma
gnet
•D
ete
cto
r ∆
ΩC
M~
0.5
sr
•F
urt
her
develo
pm
ents
-upstr
eam
PS
D a
rra
y -
cry
og
enic
gas c
ell
-do
wnstr
eam
Bra
gg d
ete
cto
rB
.P.K
ay
et
al.,
J.
Ph
ys.
312 (
2011)
09
203
4J.C
.Lig
hth
all
et
al.,
NIM
A622 (
2010)
97
htt
p:/
/ww
w.p
hy.a
nl.gov/a
tlas/h
elio
s/inde
x.htm
l4x
6x
~50m
m x
9m
m P
SD
HELIOS
B.P
.Ka
yet
al.,
J.
Ph
ys.
312 (
2011)
09
203
4
Measure
d q
ua
ntities:
Tflig
ht=
Tcyc
, positio
n z
, E
lab
Derive
d q
ua
ntities:
m/q
, E
CM,
θC
M
Eff
ectively
rem
oves k
inem
atic
angula
r re
solu
tion e
ffects
and
avoid
skin
em
atic
com
pre
ssio
n (
mea
sure
zn
ot
θ)
Targ
et
thic
kness r
em
ain
s a
n issue a
s w
ith m
ore
conve
ntion
al dete
cto
rsys
tem
s
12
3
HELIOS
~10
7/s
136X
e +
~150
µg/c
m2
(CD
2) n
B.P
.Ka
yet
al.,
J.
Ph
ys.
312 (
2011)
09
203
4
ASIC Summary
•S
ilicon s
trip
de
tecto
rsperv
asiv
e t
ech
nolo
gy
•A
SIC
sw
ide r
ange o
f applic
atio
ns
sophis
ticate
d d
esig
nhig
h p
erf
orm
an
ce
accessib
le a
nd
aff
ord
able
technolo
gy
•C
ritically
depe
ndent
on
engin
eeri
ng e
xpert
ise
sys
tem
s inte
gra
tion
Further Reading
VLS
I D
esig
n T
echniq
ues f
or
Analo
gand D
igital C
ircuits,
R.L
.Geig
er,
P.E
.Alle
nan
d N
.R.S
trader,
McG
raw
-Hill
, 199
9
Sem
icon
du
cto
r R
adia
tion D
ete
cto
rs,
Gerh
ard
Lutz
, S
pringer
Ve
rlag,
199
9
Sem
icond
ucto
r D
ete
cto
r S
yste
ms,
Helm
uth
Spie
ler,
Oxf
ord
, 2
005
http:/
/ww
w-p
hys
ics.lbl.g
ov/~
spie
ler/
AID
A A
ck
no
wle
dg
em
en
ts
My t
hanks t
o:
ST
FC
DL
P.
Cole
man-S
mith,
M.
Kogim
tzis
, I. L
azaru
s,
S.
Lett
s, P
. M
orr
all,
V.
Puckn
ell,
J.
Sim
pson &
J.
Str
achan
ST
FC
RA
L
D.
Bra
ga,
M.
Pry
dderc
h&
S.
Thom
as
Univ
ers
ity o
f Liv
erp
oo
l
T.
Gra
hn,
P. N
ola
n,
R.
Page,
S.
Ritta
-Antila
& D
. S
eddon
Univ
ers
ity o
f E
din
burg
h
Z.
Liu
, G
. Lota
y&
P.
Woods
Univ
ers
ity o
f B
righto
n
O.
Robert
s
GS
I
F.
Am
ek,
L. C
ort
es,
J. G
erl,
E. M
erc
han,
S.
Pie
triet
al.