INA337, 338: High-Temperature, Precision, Instrumentation Amplifier
Transcript of INA337, 338: High-Temperature, Precision, Instrumentation Amplifier
INA337INA338
SBOS248 – JUNE 2002
www.ti.com
DESCRIPTIONThe INA337 and INA338 (with shutdown) are high tempera-ture, high-performance, low-cost, precision instrumentationamplifiers. They are true single-supply instrumentation ampli-fiers with very-low DC errors and input common-mode rangesthat extends beyond the positive and approaches the nega-tive rail. These features make them suitable for applicationsranging from general-purpose to high-accuracy.
Excellent long-term stability and very low 1/f noise assurelow offset voltage and drift throughout the life of the product.
The INA337 (without shutdown) comes in the MSOP-8 pack-age. The INA338 (with shutdown) is offered in MSOP-10.Both are specified over the temperature range, –40°C to+125°C.
FEATURES PRECISION
LOW OFFSET: 100µV (max)LOW OFFSET DRIFT: 0.4µV/°C (max)EXCELLENT LONG-TERM STABILITYVERY-LOW 1/f NOISE
SMALL SIZEmicroPACKAGE: MSOP-8, MSOP-10
LOW COST
PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.
Copyright © 2002, Texas Instruments Incorporated
Wide-Temperature, PrecisionINSTRUMENTATION AMPLIFIER
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
APPLICATIONS LOW-LEVEL TRANSDUCER AMPLIFIER FOR
BRIDGES, LOAD CELLS, THERMOCOUPLES
WIDE DYNAMIC RANGE SENSORMEASUREMENTS
HIGH-RESOLUTION TEST SYSTEMS
WEIGH SCALES
MULTI-CHANNEL DATA ACQUISITIONSYSTEMS
MEDICAL INSTRUMENTATION
AUTOMOTIVE APPLICATIONS
GENERAL-PURPOSE
INA337 AND INA338 RELATED PRODUCTSPRODUCT FEATURES
INA326 Precision, Rail-to-Rail I/O, 2.4mA IQINA114 50µV VOS, 0.5nA IB, 115dB CMR, 3mA IQ, 0.25µV/°C driftINA118 50µV VOS, 1nA IB, 120dB CMR, 385µA IQ, 0.5µV/°C driftINA122 250µV VOS, –10nA IB, 85µA IQ, Rail-to-Rail Output, 3µV/°C driftINA128 50µV VOS, 2nA IB, 125dB CMR, 750µA IQ, 0.5µV/°C driftINA321 500µV VOS, 0.5pA IB, 94dB CMRR, 60µA IQ, Rail-to-Rail Output
INA337R1
R2 C2
VIN–
VIN+
7
V+
4
V–
VO
5
6
21
83 G = 2(R2/R1)
INA338INA337
INA337, INA3382SBOS222Awww.ti.com
SPECIFIEDPACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
PRODUCT PACKAGE-LEAD DESIGNATOR(1) RANGE MARKING NUMBER MEDIA, QUANTITY
INA337 MSOP-8 DGK –40°C to +125°C BIM INA337AIDGKT Tape and Reel, 250" " " " " INA337AIDGKR Tape and Reel, 2500
INA338 MSOP-10 DGS –40°C to +125°C BIL INA338AIDGST Tape and Reel, 250" " " " " INA338AIDGSR Tape and Reel, 2500
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.
PACKAGE/ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage .................................................................................. +5.5VSignal Input Terminals: Voltage(2) ......................................... –0.5V to (V+) + 0.5V
Current(2) ........................................................................ ±10mAOutput Short-Circuit ................................................................. ContinuousOperating Temperature Range ....................................... –40°C to +150°CStorage Temperature Range .......................................... –65°C to +150°CJunction Temperature .................................................................... +150°CLead Temperature (soldering, 10s) ............................................... +300°C
NOTES: (1) Stresses above these ratings may cause permanent damage.Exposure to absolute maximum conditions for extended periods may degradedevice reliability. These are stress ratings only, and functional operation of thedevice at these or any other conditions beyond those specified is not implied.(2) Input terminals are diode clamped to the power-supply rails. Input signals thatcan swing more than 0.5V beyond the supply rails should be current limited to10mA or less.
ELECTROSTATICDISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. TexasInstruments recommends that all integrated circuits be handledwith appropriate precautions. Failure to observe proper han-dling and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-tion to complete device failure. Precision integrated circuitsmay be more susceptible to damage because very smallparametric changes could cause the device not to meet itspublished specifications.
1
2
3
4
8
7
6
5
R1
V+
VO
R2
R1
VIN–
VIN+
V–
INA337
MSOP-8
1
2
3
4
5
10
9
8
7
6
R1
V+
VO
R2
Enable
R1
VIN–
VIN+
V–
(Connect to V+)
INA338
MSOP-10
Top View
PIN CONFIGURATION
INA337, INA338 3SBOS222A www.ti.com
ELECTRICAL CHARACTERISTICS: VS = +2.7V to +5.5VBOLDFACE limits apply over the specified temperature range, TA = –40°C to +125°CAt TA = +25°C, RL = 10kΩ, G = 100 (R1 = 2kΩ, R2 = 100kΩ), external gain set resistors, and IACOMMON = VS /2, with external equivalent filter corner of 1kHz filters,unless otherwise noted.
INA337AIDGK, INA338AIDGS
PARAMETER CONDITION MIN TYP MAX UNITS
INPUTOffset Voltage, RTI VOS VS = +5V, VCM = VS /2 ±20 ±100 µV
Over Temperature ±140 µVvs Temperature dVOS/dT ±0.1 ±0.4 µV/°Cvs Power Supply PSR VS = +2.7V to +5.5V, VCM = VS /2 ±20 ±3 µV/VLong-Term Stability See Note (1)
Input Impedance, Differential 1010 || 2 Ω || pFCommon-Mode 1010 || 14 Ω || pF
Input Voltage Range (V–) + 0.25 (V+) + 0.1 VSafe Input Voltage (V–) –0.5 (V+) + 0.5 VCommon-Mode Rejection CMR VS = +5V, VCM = (V–) + 0.25V to (V+) + 0.1V 106 120 dB
Over Temperature 100 dB
INPUT BIAS CURRENT VCM = VS /2Bias Current IB VS = +5V ±0.2 ±2 nA
vs Temperature See Typical CharacteristicsOffset Current IOS VS = +5V ±0.2 ±2 nA
NOISEVoltage Noise, RTI RS = 0Ω, G = 100, R1 = 2kΩ, R2 = 100kΩ
f = 10Hz 33 nV/√Hzf = 100Hz 33 nV/√Hzf = 1kHz 33 nV/√Hzf = 0.01Hz to 10Hz 0.8 µVp-p
Voltage Noise, RTI RS = 0Ω, G = 10, R1 = 20kΩ, R2 = 100kΩf = 10Hz 120 nV/√Hzf = 100Hz 97 nV/√Hzf = 1kHz 97 nV/√Hzf = 0.01Hz to 10Hz 4 µVp-p
Current Noise, RTIf = 1kHz 0.15 pA/√Hzf = 0.01Hz to 10Hz 4.2 pAp-p
Output Ripple, VO Filtered(2) See Applications Information
GAINGain Equation G = 2(R2/R1)Range of Gain < 0.1 > 10000 V/VGain Error(3) G = 10, 100, VS = +5V, VO = 0.25V to 4.925V 0.08 ±0.2 %
vs Temperature G = 10, 100, VS = +5V, VO = 0.25V to 4.925V ±6 ±25 ppm/°CNonlinearity G = 10, 100, VS = +5V, VO = 0.25V to 4.925V ±0.003 ±0.01 % of FS
OUTPUTVoltage Output Swing from Positive Rail RL = 10kΩ, VS = 5V (V+) – 0.075 (V+) – 0.01 V
Over Temperature (V+) – 0.075 VVoltage Output Swing from Negative Rail RL = 10kΩ, VS = 5V (V–) + 0.25 (V+) + 0.01 V
Over Temperature (V–) + 0.25 VCapacitive Load Drive 500 pFShort-Circuit Current ISC ±25 mA
INTERNAL OSCILLATORFrequency of Auto-Correction 90 kHz
Accuracy ±20 %
FREQUENCY RESPONSEBandwidth(4), –3dB BW G = 1 to 1k 1 kHzSlew Rate(4) SR VS = 5V, All Gains, CL = 100pF Filter LimitedSettling Time(4), 0.1% tS 1kHz Filter, G = 1 to 1k, VO = 2V step, CL = 100pF 0.95 ms
0.01% 1.3 ms0.1% 10kHz Filter, G = 1 to 1k, VO = 2V step, CL = 100pF 130 µs0.01% 160 µs
Overload Recovery(4) 1kHz Filter, 50% Output Overload, G = 1 to 1k 30 µs10kHz Filter, 50% Output Overload, G = 1 to 1k 5 µs
INA337, INA3384SBOS222Awww.ti.com
PARAMETER CONDITION MIN TYP MAX UNITS
POWER SUPPLYSpecified Voltage Range +2.7 +5.5 VQuiescent Current IQ IO = 0, Diff VIN = 0V, VS = +5V 2.4 3.4 mA
Over Temperature 3.7 mA
SHUTDOWNDisable (Logic-Low Threshold) 0.25 VEnable (Logic-High Threshold) 1.6 VEnable Time(5) 75 µsDisable Time 100 µsShutdown Current and Enable Pin Current VS = +5V, Disabled 2 5 µA
TEMPERATURE RANGESpecified Range –40 +125 °COperating Range –40 +150 °CStorage Range –65 +150 °CThermal Resistance θJA MSOP-8 Surface-Mount 150 °C/W
NOTES: (1) 1000-hour life test at 150°C demonstrated randomly distributed variation in the range of measurement limits—approximately 10µV. (2) See ApplicationsInformation section, Figures 1 and 2. (3) Does not include error and TCR of external gain-setting resistors. (4) Dynamic response is limited by filtering. Higherbandwidths can be achieved by adjusting the filter. (5) See Typical Characteristics, “Input Offset Voltage vs Warm-Up Time”.
ELECTRICAL CHARACTERISTICS: VS = +2.7V to +5.5V (Cont.)BOLDFACE limits apply over the specified temperature range, TA = –40°C to +125°CAt TA = +25°C, RL = 10kΩ, G = 100 (R1 = 2kΩ, R2 = 100kΩ), external gain set resistors, and IACOMMON = VS /2, with external equivalent filter corner of 1kHz filters,unless otherwise noted.
INA337AIDGK, INA338AIDGS
INA337, INA338 5SBOS222A www.ti.com
TYPICAL CHARACTERISTICSAt TA = 25°C, VS = +5V, Gain = 100, RL = 10kΩ with external equivalent filter corner of 1kHz filters, unless otherwise noted.
GAIN vs FREQUENCY1kHz FILTER
Frequency (Hz)
10 100 1k 10k 100k 1M
Gai
n (d
B)
80
60
40
20
0
–20
–40
G = 1k
G = 100
G = 10
G = 1
GAIN vs FREQUENCY10kHz FILTER
Frequency (Hz)
10 100 1k 10k 100k 1M
Gai
n (d
B)
80
60
40
20
0
–20
–40
G = 1k
G = 100
G = 10
G = 1
INPUT-REFERRED VOLTAGE NOISE AND INPUT BIAS CURRENT NOISE vs FREQUENCY
10kHz Filter
1
10k
1k
100
10
1
0.1
0.01
0.00110 100 1k 10k
Frequency (Hz)
Inpu
t-R
efer
red
Vol
tage
Noi
se (
nV/√
Hz)
Inpu
t Bia
s C
urre
nt N
oise
(pA
/√H
z)G = 1
G = 100
Current Noise(all gains)
G = 10
G = 1000
CMR vs FREQUENCY1kHz FILTER
Frequency (Hz)
10 100 1k 10k 100k 1M
CM
R (
dB)
160
140
120
100
80
60
40
20
G = 1k
G = 100
G = 10
G = 1
CMR vs FREQUENCY10kHz FILTER
Frequency (Hz)
10 100 1k 10k 100k 1M
CM
R (
dB)
160
140
120
100
80
60
40
20
G = 100
G = 10G = 1
G = 1k
POWER-SUPPLY REJECTION vs FREQUENCY
Frequency (Hz)
10 100 1k 10k 100k
PS
R (
dB)
120
100
80
60
40
20
0
G = 100, 1k
G = 10G = 1
Filter Frequency10kHz1kHz
INA337, INA3386SBOS222Awww.ti.com
TYPICAL CHARACTERISTICS (Cont.)At TA = 25°C, VS = +5V, Gain = 100, RL = 10kΩ with external equivalent filter corner of 1kHz filters, unless otherwise noted.
SMALL-SIGNAL RESPONSEG = 1, 10, AND 100
50m
V/d
iv
500µs/div
1kHz Filter
10kHz Filter
SMALL-SIGNAL STEP RESPONSEG = 1000
50m
V/d
iv
500µs/div
1kHz Filter
LARGE-SIGNAL RESPONSEG = 1 TO 1000
2V/d
iv
500µs/div
1kHz Filter
10kHz Filter
INPUT OFFSET VOLTAGE vs TURN-ON TIME1kHz FILTER, G = 100
Inpu
t Offs
et V
olta
ge (
20µV
/div
)
10 2
Turn-On Time (ms)
FilterSettling Time
DeviceTurn-On
Time(75µs)
INPUT OFFSET VOLTAGE vs WARM-UP TIME10kHz FILTER, G = 100
Inpu
t Offs
et V
olta
ge (
20µV
/div
)
0.2 0.30 0.1 0.4
Warm-Up Time (ms)
FilterSettling Time
DeviceTurn-On
Time
0.01Hz TO 10Hz VOLTAGE NOISE
200n
V/d
iv
10s/div
INA337, INA338 7SBOS222A www.ti.com
TYPICAL CHARACTERISTICS (Cont.)At TA = 25°C, VS = +5V, Gain = 100, RL = 10kΩ with external equivalent filter corner of 1kHz filters, unless otherwise noted.
OFFSET VOLTAGE PRODUCTION DISTRIBUTIONG = 1
Offset Voltage (µV)
–10,
000
–900
0–8
000
–700
0–6
000
–500
0–4
000
–300
0–2
000
–100
0 010
0020
0030
0040
0050
0060
0070
0080
0090
0010
,000
Pop
ulat
ion
OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTIONG = 1
Offset Voltage Drift (µV/°C)
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pop
ulat
ion
OFFSET VOLTAGE PRODUCTION DISTRIBUTIONG = 10
Offset Voltage (µV)
–100
0–9
00–8
00–7
00–6
00–5
00–4
00–3
00–2
00–1
00 010
020
030
040
050
060
070
080
090
010
00
Pop
ulat
ion
OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTIONG = 10
Offset Voltage Drift (µV/°C)
Pop
ulat
ion
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
OFFSET VOLTAGE PRODUCTION DISTRIBUTIONG = 100 and 1000
Offset Voltage (µV)
100 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 80 90 100
Pop
ulat
ion
OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTIONG = 100 and 1000
Offset Voltage Drift (µV/°C)
Pop
ulat
ion
0.0
0.2
0.4
0.6
0.8
0.1
0.12
0.14
0.16
0.18 0.2
0.22
0.24
0.26
0.28 0.3
0.32
0.34
0.36
0.38 0.4
INA337, INA3388SBOS222Awww.ti.com
TYPICAL CHARACTERISTICS (Cont.)At TA = 25°C, VS = +5V, Gain = 100, RL = 10kΩ with external equivalent filter corner of 1kHz filters, unless otherwise noted.
INPUT BIAS CURRENT vs TEMPERATURE
Temperature (°C)
I B (
nA)
2.0
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
IB–
IB+
–40 40200–20 1201008060
QUIESCENT CURRENT vs TEMPERATURE
Temperature (°C)
–50 –25 0 25 50 75 100 125
I Q (
mA
)
3.0
2.5
2.0
1.5
1.0
0.5
0
VS = +2.7V
VS = +5V
GAIN ERROR PRODUCTION DISTRIBUTION
Gain Error (m%)
–200
–180
–160
–140
–120
–100 –8
0–6
0–4
0–2
0 0 20 40 60 80 100
120
140
160
180
200
Pop
ulat
ion
INPUT-REFERRED RIPPLE SPECTRUMG = 100
Frequency (Hz)
0 200k 400k 600k 800k 1M
VO
UT (
dBV
)
100
110
120
130
140
150
160
170
180
VO
UT (
µVrm
s)
100
31.6
1
0.316
0.10
0.03
0.01
0.003
0.001
OUTPUT SWING TO THE NEGATIVE RAILvs TEMPERATURE
Out
put S
win
g to
Neg
ativ
e R
ail (
mV
)
–40
16
14
12
10
8
6
4
2
040200–20
Temperature (°C)
1201008060
INA337, INA338 9SBOS222A www.ti.com
INA337 VO FilteredVO
6
G = 2(R2/R1)
fO = 1kHz
RO100Ω
CO(1)
1µF
R2 C2(1)
7
V+
4
0.1µF
V–
5
Single-Supply Operation
IACOMMON(2)
IACOMMON(2)
INA337R1
R1
VIN–
VIN+
VO FilteredVO
6
2
1
8
3G = 2(R2/R1)
fO = 1kHz
RO100Ω
CO(1)
1µF
R2 C2(1)
7
+2.5V
4
0.1µF
–2.5V
5
Dual-Supply Operation
NOTES: (1) C2 and CO combine to form a 2-pole response that is –3dB at 1kHz. Each individual pole is at 1.5kHz. (2) Output voltage is referenced to IACOMMON (see text).
NOTES: (1) C2 and CO combine to form a 2-pole response that is –3dB at 1kHz. Each individual pole is at 1.5kHz. (2) Output voltage is referenced to IACOMMON (see text).(3) Output pedestal required for measurement near zero (see Figure 6).
1
8
VIN–
VIN+
2
3(3)
DESIRED R1 R2 || C2GAIN (Ω) (Ω || nF)
0.1 400k 20k || 50.2 400k 40k || 2.50.5 400k 100k || 11 400k 200k || 0.52 200k 200k || 0.55 80k 200k || 0.510 40k 200k || 0.520 20k 200k || 0.550 8k 200k || 0.5100 4k 200k || 0.5200 2k 200k || 0.5500 2k 500k || 0.2
1000 2k 1M || 0.12000 2k 2M || 0.055000 2k 5M || 0.0210000 2k 10M || 0.01
APPLICATIONS INFORMATIONFigure 1 shows the basic connections required for operation ofthe INA337. A 0.1µF capacitor, placed close to and across thepower-supply pins is strongly recommended for highest accu-racy. RoCo is an output filter that minimizes auto-correctioncircuitry noise. This output filter may also serve as an anti-aliasing filter ahead of an Analog-to-Digital (A/D) converter. Itis also optional based on desired precision.
The output reference terminal is taken at the low side of R2
(IACOMMON).
The INA337 uses a unique internal topology to achieve excel-lent common-mode rejection (CMR). Unlike conventional in-strumentation amplifiers, CMR is not affected by resistance inthe reference connections. See “Inside the INA337” for furtherdetail. To achieve best high-frequency CMR, minimize capaci-tance on pins 1 and 8.
FIGURE 1. Basic Connections. NOTE: Connections for INA338 differ—see Pin Configuration for detail.
SETTING THE GAIN
The INA337 is a 2-stage amplifier with each stage gain setby R1 and R2, respectively (see Figure 4, “Inside the INA337",for details.) Overall gain is described by the equation:
GRR
= 2 2
1(1)
The stability and temperature drift of the external gain-settingresistors will affect gain by an amount that can be directlyinferred from the gain equation (1).
Resistor values for commonly used gains are shown inFigure 1. Gain-set resistor values for best performance aredifferent for +5V single-supply and for ±2.5V dual-supplyoperation. Optimum value for R1 can be calculated by:
R1 = VIN, MAX/12.5µA (2)
where R1 must be no less than 2kΩ.
DESIRED R1 R2 || C2GAIN (Ω) (Ω || nF)
0.1 400k 20k || 50.2 400k 40k || 2.50.5 400k 100k || 11 200k 100k || 12 100k 100k || 15 40k 100k || 110 20k 100k || 120 10k 100k || 150 4k 100k || 1100 2k 100k || 1200 2k 200k || 0.5500 2k 500k || 0.2
1000 2k 1M || 0.12000 2k 2M || 0.055000 2k 5M || 0.0210000 2k 10M || 0.01
INA337, INA33810SBOS222Awww.ti.com
Following this design procedure for R1 produces the maxi-mum possible input stage gain for best accuracy and lowestnoise.
Circuit layout and supply bypassing can affect performance.Minimize the stray capacitance on pins 1 and 8. Use recom-mended supply bypassing, including a capacitor directly frompin 7 to pin 4 (V+ to V–), even with dual (split) power supplies(see Figure 1).
DYNAMIC PERFORMANCE
The typical characteristic “Gain vs Frequency” shows that theINA337 has nearly constant bandwidth regardless of gain.This results from the bandwidth limiting from the recom-mended filters.
NOISE PERFORMANCE
Internal auto-correction circuitry eliminates virtually all 1/fnoise (noise that increases at low frequency) in gains of 100or greater. Noise performance is affected by gain-settingresistor values. Follow recommendations in the “SettingGain” section for best performance.
Total noise is a combination of input stage noise and outputstage noise. When referred to the input, the total mid-bandnoise is:
V nV HznV Hz
GN = +33800
//
(3)
The output noise has some 1/f components that affectperformance in gains less than 10. See typical characteristic“Input-Referred Voltage Noise vs Frequency.”
High-frequency noise is created by internal auto-correctioncircuitry and is highly dependent on the filter characteristicschosen. This may be the dominant source of noise visiblewhen viewing the output on an oscilloscope. Low cutofffrequency filters will provide lowest noise. Figure 2 shows thetypical noise performance as a function of cutoff frequency.
Applications sensitive to the spectral characteristics of high-frequency noise may require consideration of the spuriousfrequencies generated by internal clocking circuitry. “Spurs”occur at approximately 90kHz and its harmonics (see typicalcharacteristic “Input Referred Ripple”) which may be reducedby additional filtering below 1kHz.
Insufficient filtering at pin 5 can cause nonlinearity with largeoutput voltage swings (very near the supply rails). Noisemust be sufficiently filtered at pin 5 so that noise peaks do not“hit the rail” and change the average value of the signal.Figure 2 shows guidelines for filter cutoff frequency.
HIGH-FREQUENCY NOISE
C2 and CO form filters to reduce internally generated auto-correction circuitry noise. Filter frequencies can be chosen tooptimize the tradeoff between noise and frequency responseof the application, as shown in Figure 2. The cutoff frequen-cies of the filters are generally set to the same frequency.Figure 2 shows the typical output noise for four gains as afunction of the –3dB cutoff frequency of each filter response.Small signals may exhibit the addition of internally generatedauto-correction circuitry noise at the output. This noise,combined with broadband noise, becomes most evident inhigher gains with filters of wider bandwidth.
INPUT BIAS CURRENT RETURN PATH
The input impedance of the INA337 is extremely high—approximately 1010Ω. However, a path must be provided forthe input bias current of both inputs. This input bias current isapproximately ±0.2nA. High input impedance means that thisinput bias current changes very little with varying input voltage.
Input circuitry must provide a path for this input bias currentfor proper operation. Figure 3 shows provisions for an inputbias current path in a thermocouple application. Without abias current path, the inputs will float to an undefined poten-tial and the output voltage may not be valid.
FIGURE 2. Total Output Noise vs Filter Cutoff Frequency.
1001 10 1k 10kRequired Filter Cutoff Frequency (Hz)
Tota
l Out
put N
oise
(µV
RM
S)
1k
100
10
1
G = 10
G = 1
G = 100
G = 1000
INA337Thermocouple5
FIGURE 3. Providing Input Bias Current Return Path.
INA337, INA338 11SBOS222A www.ti.com
INPUT AND OUTPUT VOLTAGE
The INA337 and INA338 feature nearly rail-to-rail inputbehavior, with the linear input voltage range extending from0.25V above the negative rail to 0.1V above the positive rail.The output is able to swing to within 0.25V of the negative railand 0.075V of the positive rail. See Typical CharacteristicsCurve “Output Swing to the Negative Rail” for additionaldetail.
The INA337 uses a new, unique internal circuit topologythat provides near rail-to-rail input. Unlike other instru-mentation amplifiers, it can linearly process inputs from0.25V above the negative rail to 0.1V beyond the positiverail. Conventional instrumentation amplifier circuits cannotdeliver such performance, even if rail-to-rail op amps areused.
The ability to reject common-mode signals is derived inmost instrumentation amplifiers through a combination ofamplifier CMR and accurately matched resistor ratios. TheINA337 converts the input voltage to a current. Current-mode signal processing provides rejection of common-mode input voltage and power-supply variation withoutaccurately matched resistors.
The topology of the INA337 avoids aliasing issues thatappear in instrumentation amplifiers that use sampleddata techniques.
A simplified diagram shows the basic circuit function. Thedifferential input voltage, (VIN+) – (VIN–) is applied acrossR1. The signal-generated current through R1 comes fromA1 and A2’s output stages. A2 combines the current in R1
with a mirrored replica of the current from A1. The result-ing current in A2’s output and associated current mirror istwo times the current in R1. This current flows in (or out)of pin 5 into R2. The resulting gain equation is:
GRR
= 2 2
1
Amplifiers A1, A2 and their associated mirrors are pow-ered from internal charge-pumps that provide voltagesupplies that are beyond the positive negative supply. Asa result, the voltage developed on R2 can actually swing100mV above the positive power-supply rail. A3 providesa buffered output of the voltage on R2. A3’s input stage isalso operated from the charge-pumped power supplies fortrue rail-to-rail operation.
FIGURE 4. Simplified Circuit Diagram.
INSIDE THE INA337
INPUT PROTECTION
The inputs of the INA337 are protected with internal diodesconnected to the power-supply rails. These diodes will clamp theapplied signal to prevent it from damaging the input circuitry. If theinput signal voltage can exceed the power supplies by more than0.5V, the input signal current should be limited to less than 10mAto protect the internal clamp diodes. This can generally be donewith a series input resistor. Some signal sources are inherentlycurrent-limited and do not require limiting resistors.
A1
V+ V–
Current Mirror
Current Mirror
IR1
IR1
IR1 R1
R2 C2
VO
VIN–
VIN+
IR1
2IR1
2IR1 2IR1
2IR1
2IR1
A3A2
IACOMMON
0.1µF
Current Mirror
Current Mirror
INA337, INA33812SBOS222Awww.ti.com
2kΩ
200kΩ
200kΩ
VREF
RO
5 CO
C2
VREF
INA337A/D
Converter
G = 2(200kΩ || 200kΩ)/2kΩ = 100
FIGURE 6. Output Range Pedestal.
FIGURE 7. High-Side Shunt Measurement of Current Load.
FILTERING
Filtering can be adjusted through selection of R2C2 andROCO for the desired tradeoff of noise and bandwidth. Adjust-ment of these components will result in more or less rippledue to auto-correction circuitry noise and will also affectbroadband noise. Filtering limits slew rate, settling time, andoutput overload recovery time.
It is generally desirable to keep the resistance of RO relativelylow to avoid DC gain error created by the subsequent stageloading. This may result in relatively high values for CO toproduce the desired filter response. The impedance of ROCO
can be scaled higher to produce smaller capacitor values ifthe load impedance is very high.
Certain capacitor types greater than 0.1µF may have dielec-tric absorption effects that can significantly increase settlingtime in high-accuracy applications (settling to 0.01%). Polypro-pylene, polystyrene, and polycarbonate types are generallygood. Certain “high-K” ceramic types may produce slowsettling “tails.” Settling time to 0.1% is not generally affectedby high-K ceramic capacitors. Electrolytic types are notrecommended for C2 and CO.
INA338 ENABLE FUNCTION
The INA338 can be enabled by applying a logic “High”voltage level to the Enable pin. Conversely, a logic “Low”voltage level will disable the amplifier, reducing its supplycurrent from 2.4mA to typically 2µA. For battery-operatedapplications, this feature may be used to greatly reduce theaverage current and extend battery life. This pin should beconnected to a valid high or low voltage or driven, not leftopen circuit. The Enable pin can be modeled as a CMOSinput gate as in Figure 5.
R1
R´2
5
R0
R2 C2
C0VREF = 10V to 5V
G = 2 (R2 || R´2)/R1
INA337
R2 and R´2 are chosen to create a small pedestal voltage (e.g., 250mV).Gain is determined by the parallel combinationof R2 and R´2.
INA337
+5V
IL
5
RO
RS
R1
R2 C2
CO
NOTE: Connection pointof V+ will include ( ) or exclude ( ) quiescent current in the measurementas desired. Output pedestal required for measurements near zero (see Figure 6).
RS must be chosenso that the input voltagedoes not exceed 100mV above the rail.
FIGURE 8. Output Referenced to VREF/2.
FIGURE 5. Enable Pin Model.
V+
Enable
6
2µA
V–
The enable time following shutdown is 75µs plus the settlingtime due to filters (see Typical Characteristics, “Input OffsetVoltage vs Warm-up Time”). Disable time is 100µs. Thisallows the INA338 to be operated as a “gated” amplifier, orto have its output multiplexed onto a common output bus.When disabled, the output assumes a high-impedance state.
INA338 PIN 5
Pin 5 of the INA338 should be connected to V+ to ensureproper operation.
INA337, INA338 13SBOS222A www.ti.com
PACKAGE DRAWINGS MPDS028B – JUNE 1997 – REVISED SEPTEMBER 2001
DGK (R-PDSO-G8) PLASTIC SMALL-OUTLINE PACKAGE
0,690,41
0,25
0,15 NOM
Gage Plane
4073329/C 08/01
4,98
0,25
5
3,054,782,95
8
4
3,052,95
1
0,38
1,07 MAX
Seating Plane
0,65 M0,08
0°–6°
0,100,150,05
NOTES: A. All linear dimensions are in millimeters.B. This drawing is subject to change without notice.C. Body dimensions do not include mold flash or protrusion.D. Falls within JEDEC MO-187
INA337, INA33814SBOS222Awww.ti.com
PACKAGE DRAWINGS (Cont.) MPDS035A – JANUARY 1998 – REVISED SEPTEMBER 2001
DGS (S-PDSO-G10) PLASTIC SMALL-OUTLINE PACKAGE
0,690,41
0,25
0,15 NOM
Gage Plane
4073272/B 08/01
4,98
0,17
6
3,054,782,95
10
5
3,052,95
1
0,27
0,150,05
1,07 MAX
Seating Plane
0,10
0,50 M0,08
0°–6°
NOTES: A. All linear dimensions are in millimeters.B. This drawing is subject to change without notice.C. Body dimensions do not include mold flash or protrusion.A. Falls within JEDEC MO-187
PACKAGE OPTION ADDENDUM
www.ti.com 10-Jun-2014
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status(1)
Package Type PackageDrawing
Pins PackageQty
Eco Plan(2)
Lead/Ball Finish(6)
MSL Peak Temp(3)
Op Temp (°C) Device Marking(4/5)
Samples
INA337AIDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS& no Sb/Br)
CU NIPDAUAG Level-2-260C-1 YEAR -40 to 125 BIM
INA337AIDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS& no Sb/Br)
CU NIPDAUAG Level-2-260C-1 YEAR -40 to 125 BIM
INA337AIDGKT ACTIVE VSSOP DGK 8 250 Green (RoHS& no Sb/Br)
CU NIPDAUAG Level-2-260C-1 YEAR -40 to 125 BIM
INA337AIDGKTG4 ACTIVE VSSOP DGK 8 250 Green (RoHS& no Sb/Br)
CU NIPDAUAG Level-2-260C-1 YEAR -40 to 125 BIM
INA338AIDGST ACTIVE VSSOP DGS 10 250 Green (RoHS& no Sb/Br)
CU NIPDAUAG Level-2-260C-1 YEAR -40 to 125 BIL
(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.
PACKAGE OPTION ADDENDUM
www.ti.com 10-Jun-2014
Addendum-Page 2
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device PackageType
PackageDrawing
Pins SPQ ReelDiameter
(mm)
ReelWidth
W1 (mm)
A0(mm)
B0(mm)
K0(mm)
P1(mm)
W(mm)
Pin1Quadrant
INA337AIDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA337AIDGKT VSSOP DGK 8 250 180.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA338AIDGST VSSOP DGS 10 250 180.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 19-Nov-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA337AIDGKR VSSOP DGK 8 2500 367.0 367.0 35.0
INA337AIDGKT VSSOP DGK 8 250 210.0 185.0 35.0
INA338AIDGST VSSOP DGS 10 250 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 19-Nov-2012
Pack Materials-Page 2
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