IMAPS Conference VI/VI-2.pdf · CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012....
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Transcript of IMAPS Conference VI/VI-2.pdf · CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012....
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October 2011
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IMAPS ConferenceLa Rochelle, Feb 2, 2012
Enabling High Power Density
through Higher Temperature Gate-Drivers in
New Generation of SiC/ GaN Power Modules
Jean-Christophe DoucetVP Marketing & Business Development
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The Company
• CISSOID is the Leader in Semiconductor solutions dedicated to
Extreme Temperatures & High Reliability
• CISSOID products operate reliably and are guaranteed
– From -55°C to +225°C for HT family
– From -55°C to +175°C for MT family
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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Differentiator
70°C
158°F
-200°C
-328°F
400°C752°F
0°C
32°F
Commercial standards
85°C
185°F
Industrial standards
-40°C
-40°F
CISSOID products
-55°C
-67°F
225°C437°F
125°C
257°F
Military standards
Cissoid products operate reliably in an
• Cissoid products have guaranteed specification from -55°C to +225°C
• Extreme tests by NASA demonstrated reliable operation from -195°C to +400°C
Extended Range of Temperature
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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Markets
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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Products offering
Power Supply
Switched-Mode Voltage Regulators, PoL & ICs for
DC-DC Converters
Turnkey DC-DC Converters Ref DesignsLinear Voltage Regulators
VOLCANOVOLCANOSTAR
ETNA Module
VESUVIO® & EREBUS®
STROMBOLI®MAGMA
(PWM Controller)POLARIS
(BG3M - 3mA)HELIOS (1A) HYPERION
Signal Conditioning, General Purpose & Discrete
Mixed Signal-AMAZON (ADC)-NILE (Comparator)
-POLARIS (Voltage
Ref)
Clock & Timer-Clock Gen.-555
Amplifiers- TURQUOISE- RUBY
Telemetry & RFID
- MERLIN: Battery-less, wireless Telemetry
Logic Gates- 74XX compatible
Transistors & Switches
RIVER PULSAR GALAXY WIZARDGEMSTONEPLANET
Power Conversion
Half & Full Bridge Drivers Solutions for Power Drivers & Modules
TITAN TITAN
PALLAS HYPERION EVK-RHEAEVK-THEMIS-ATLAS EVK-HADES®
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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Power Converters:
Market Needs & Design Goals
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
Reduce
Size &
Weight
Increase
Reliability
& Lifetime
Increase
Efficiency
• Electrical actuators; fluid pumps…
• Multi 100’skW MW Power converters
• Motor drives: Industrial; Elevators; AC…
• EV / HEV: Motor drives; battery chargers; boost converters; auxiliary HVDC 12V converters…
• Solar inverters; wind turbine power converters
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SiC & GaN: Disruptive technology for
Power Modules But Creating New Challenges
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
Reduce
Size &
Weight
Use of
Wide-
Bandgap
Power
Switches:
SiC / GaN
Increase the power
density
Increase switching
Frequency ( smaller
passives & magnetic)
Increase
Reliability
& Lifetime
Increase the operating
temperature and
reduce the cooling
Increase
Efficiency
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Why SiC / GaN?
• Wide-bandgap power switches - SiC, GaN - are poised to displace IGBT and Si switches in power converters:– They offer much lower dynamic losses
– As a result, they can be switched at much higher frequency
– Their power density is much greater than silicon devices
– They can operate at much higher junction temperatures
• A number of SiC devices begin to be available: – MOSFETs: CREE; RHOM
– Normally On JFETs: SemiSouth; Infineon (announced)
– BJTs: Fairchild (Transic); Genesic
– Normally Off JFETs: SemiSouth
• GaN look promising for voltages <1200V
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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SiC & GaN: Disruptive technology for
Power Modules But Creating New Challenges
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
Reduce
Size &
Weight
Increase the power
density
Increase switching
Frequency ( smaller
passives & magnetic)
Increase
Reliability
& Lifetime
Increase the operating
temperature and
reduce the cooling
Requires the Gate Drive
circuitry to be placed as
close as possible to the
power switches to reduce
parasitic inductancesIncrease
Efficiency Traditional silicon ICs do
not operate reliably above
125°C
The need / trend to run at higher frequency, with higher reliability and to reduce the cooling taking advantage of the high-temperature capability of the SiC / GaN are not
achievable because of the limitation of the silicon gate-drive circuitry.
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The Challenge
• How to drive these new SiC / GaN switches and take full advantage of their capabilities?– The gate driver must support high-frequency switching and very fast
transition times
– This results in the need to reduce the parasitic inductances
– Which results in the need to place the gate drive IC close to the power switch ideally within the Power Module
– But in the meantime, we want to increase the junction temperature of the power switch to reduce the cooling and reduce the size / weight !!
– And we also want to increase the reliability & lifetime of the system !! (e.g. RNE and aerospace applications now have requirements for 25/30 years lifetime for the power converters)
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
CISSOID has developed a dedicated solution based on its high temperature / high reliability silicon technology. A new gate driver called HADES®
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HADES®
Typical Application:
3-Phase Motor Drive
High-SidePower Device
Control
High-Voltage DC bus (e.g. 600VDC)
Low-SidePower Device
Half-Bridge (HB1) HB2 HB3
HADESIsolated Gate Driver & isolated power supply
Fault
Hot Area (MCM or PCB implementation)
Co
ntr
ol
(sp
ee
d, p
osi
tio
n, t
orq
ue
)
DCisolation
HADES allows dramatic
reduction of parasitic
inductances as the THEMIS-
ATLAS dice can be placed right next to the SiC
switch dice
Fault
Control
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HADES®
Original Requirements
• Use of CISSOID CHT technology: -55°C to +225°rating [junction ] needed:
– for high-temperature environments (200°C and above)
– to sustain self-heating in high-power-density converters
– for long-term reliability when used in “low temperatures” (e.g. 100/125°C)
• 600V / 1200V DC bus voltage support
• Gate-current: 4A minimum, up to 20A
• Fast switching times
• Switching frequency: 100kHz and beyond (possibly 1MHz for GaN-based converters)
• Isolation of data : Magnetic-based (non-opto) for high-temperature reliability
• Isolated power supply – (ideally 2 instances for each high &low when using nONJFET switches)
• High common mode transient immunity: 50kV/µs
• Specific functions: Active Miller Clamping (AMC); Desat Detection; UVLO
• High integration level for compact MCM implementations of a 3-Phase motor drive
• Cost effective solution CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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HADES®
: Demo Board & Test Vehicle
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
Demonstration board EVK-HADES:
Suitable for immediate testing at 175°C / 225°C
Availability:
Cree MOSFETs : Dec 2012
SemiSouth nON JFETs: Q2 2012
Fairchild / Transic BJT: Contact CISSOID
HADES Chipset:
Suitable for MCM & Power Module integration
Available in die form
Availability: Sampling & pre-series: Dec 2011
Production: Q2 2012
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AMC
HADES®
Block Diagram
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
Power Supply (Isolated)
HS Driver (2x2A)
LS Driver (2x2A)
Po
wer
Sw
itch
es
(HS
+ L
S)
Isolated Data Transmit
Isolated Data Transmit
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CHT-THEMIS-ATLAS:
The Gate Driver Function Blocks
2,375
2,400
2,425
2,450
2,475
2,500
2,525
2,550
2,575
2,600
2,625
-100 0 100 200 300
DE
SA
T T
hre
sh
lod
[V
]
Ambient Temperature [°C]
2%
DESAT Threshold Voltage versus Ta
Desaturaton Detection:
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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CHT-THEMIS-ATLAS:
The Gate Driver Function Blocks
Under Voltage Lockout :
2,375
2,425
2,475
2,525
2,575
2,625
-100 -50 0 50 100 150 200 250
UV
LO
Th
res
hlo
d [
V]
Ambient Temperature [°C]
High Threshold
Low Threshold
2%
UVLO Threshold Voltage versus Ta
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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CHT-THEMIS-ATLAS:
The Gate Driver Function Blocks
ATLAS Output Characteristics :
On-Resistance versus Temperature
for 1 ATLAS ChannelOutput Current versus Temperature
for 1 ATLAS Channel
0
0,5
1
1,5
2
2,5
-100 0 100 200 300
On
-Re
sis
tan
ce
[O
hm
]
Temperature [°C]
Low State
High State
0
1
2
3
4
-100 0 100 200 300
Ou
tpu
t c
urr
en
ts [
A]
Temperature [°C]
Sink Current
Source Current
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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CHT-THEMIS-ATLAS:
The Gate Driver Function Blocks
Turn On/Off Propagation delays:
Turn On Propagation delay trough
THEMIS and ATLAS vs temperature
(Cload=1nF)
Turn Off Propagation delay trough
THEMIS and ATLAS vs temperature
(Cload=1nF)
0
20
40
60
80
100
-100 0 100 200 300
Tu
rn O
n P
rop
ag
ati
on
dela
y [
ns]
Temperature [°C]
0
20
40
60
80
100
-100 0 100 200 300
Tu
rn O
ff P
rop
ag
ati
on
dela
y [
ns]
Temperature [°C]
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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CHT-RHEA Chipset:
The Data Isolation Function Block
Dual Channel - 2 Mbps per channel
Supply voltage: 5V
Delay < 100ns
Jitter (RMS cycle-2-cycle) : <21ns
Modulation frequency: Programmable from 6.5MHz to 20MHz
High common mode transient immunity:
50kV/μs
On-Off Keying modulation
Full programmability (carrier frequency, modulation polarity)
Low power: 43mW/channel
2.5 kV isolation (10 MΩ) with 6mm (0.24”) core transformers (1 per channel)
2.1’’ (53mm)
1.8’’
(45 mm)
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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Stromboli®
and CHT-MAGMA:
The Isolated Power Supply Function Block
CHT-MAGMA
GND FB
Vin
(12V ±10%)
SWT
THRESHOLD
COMPPWM
VDD
VDDH
VSSH
NSH
CHT-MOON
CHT-CALLISTO
Discrete
VDDL
VSSL
NSLCHT-CALLISTO
Vin range: +12V ±10%SiC MOSFET: +20V/-5Output voltages: Two outputs options:SiC MOSFET: +20V / -5VSiC Normally-On JFET: 0V/-20V
Output Power: 2W
75% Typ. Efficiency
Isolation: o 2,500VAC @50Hz (for 1mn)o >100MΩ @500VDC
High dV/dt immunity: 50kV/µs
225°C Transformer
Flyback topology
Based on CHT-MAGMA
PWM controller
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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EVK-HADES®
: 1-Leg Isolated
Gate Drive Demo Board
High-side and Low-side gate drive
Support of 1200V Switches
4A Peak output current per channel
High common mode transient immunity:
50kV/µs
Operates from a single 12V ±10% supply
Switching frequency capability: >200kHz
Dual (with on-board non-overlapping)/ single
PWM input
Active Miller clamping
Desaturation protection
Fault outputs
Eval Board qualified from -55 to +175°C
(ambient)
200°C Polyimide PCB
Active components all qualified from -55 to
+225°C (Tj)
225°C Transformers
4’’ (100mm)
4’’
(100mm)
2 versions:
Normally-On JFET Support
MOSFET Support
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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HADES®
in a 3kW Buck
DC-DC Converter Test Setup
EVK-HADES board mounted in a 600V / 10A, 3kW Buck DC-DC Converter power board using standard temperature SiC MOSFETs
GND
CMF20120D,
CREE
DC
HADES
LS_NG
LS_ND
LS_NS
DC +12V
VDD
PWM
DC power
supply
(600V)
HS_NG
HS_ND
HS_NS
HS_IN
HADES
NGL
NDL
NSL
VDD
NGH
NDH
NSH
VSS
PWML
PWMH
L
C LOAD3kW
750V
50ACMF20120D,
CREE
Test conditions:
Temperature = 25°C / 175°C
(ambient)
PWM signals: 100kHz, 50%
duty cycle
DC bus voltage = 600V
Output voltage = 300V
Output current = 10A
Load resistance = 30Ω
HB_SA_SEL = 5V
Local non-overlap: 400 ns
Passive components:
C=5µF
L=0.9mH
Load = 30Ω, 3kW
Power transistors: CREE
MOSFET CMF20120D
GND
CMF20120D,
CREE
DC
HADES
LS_NG
LS_ND
LS_NS
DC +12V
VDD
PWM
DC power
supply
(600V)
HS_NG
HS_ND
HS_NS
HS_IN
HADES
NGL
NDL
NSL
VDD
NGH
NDH
NSH
VSS
PWML
PWMH
L
C LOAD3kW
750V
50ACMF20120D,
CREE
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
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HADES®
in a 3kW Buck
DC-DC Converter
DC-DC operation at 100 kHz :
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
Control Line
PWML
Output Voltage
Inductor current
(2A/Div)
Half-Bridge
Output Voltage
Efficiency:
Switching Frequency
Operating Temperature
(Ambient)Efficiency
150kHz 25°C 94.5%
150kHz 175°C 92.1%
100kHz 25°C 97.0%
100kHz 175°C 94.4%
50kHz 25°C 97.6%
50kHz 175°C 95.2%
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HADES®
in a 3kW Buck
DC-DC Converter
Propagation delay & Switching Times:
PWML Control
- Rising Edge
Half-Bridge
Falling Edge
DC Output
Voltage
Propagation delay: 200ns
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
Output Fall time: 33ns
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HADES®
in a 3kW Buck
DC-DC Converter
Propagation delay & Switching Times:
PWML Control - Falling Edge
Half-Bridge Rising Edge
DC Output Voltage
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
Propagation delay: 200ns (+ 400ns non-overlapping)
Output Rise Time: 25.8ns
dV/dt = 23.3kV/µs
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HADES®
in a 3kW Buck
DC-DC Converter
Conclusion:
• HADES® was demonstrated with an ambient temperature of 175°C with standard SiC MOSFET devices
• HADES® enables fast switching of SiC MOSFETs, enabling low switching losses
• Higher performance is expected with MCM integration of Power Module incorporating HADES
Will further reduce the parasitic inductance
Allowing faster switching time,
Allowing higher efficiency,
Allowing higher operating temperature, supporting reduced cooling
and higher-temperature environments
CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012
HADES®, the Solution of Choice for High-Performance, High-Power Density Power Modules!
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Jean-Christophe Doucet
VP Marketing & Business
Development
Thank You for your attention !