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IMAPS - 2009 Mohammad Chowdhury
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Transcript of IMAPS - 2009 Mohammad Chowdhury
Understanding Micro Via Fabrication Understanding Micro Via Fabrication by Mechanical Punching in Liquid by Mechanical Punching in Liquid
Crystal Polymer (LCP) Substrate for Crystal Polymer (LCP) Substrate for RF-MEMS and Related Electronic RF-MEMS and Related Electronic
Packaging ApplicationsPackaging Applications
Mohammad K. Chowdhury,1 Li Sun,2 Shawn Cunningham,2 and Ajay P. Malshe1*
1University of Arkansas, Fayetteville, AR 727012WiSpry Inc., Irvine, CA 92618
*Contact E-mail: [email protected]
IMAPS 2009November 3rd, 2009
Outline:
Motivations and Applications
Different Substrate Materials and Fabrication Techniques
μ-via fabrication by Mechanical punching
Results and Discussion
Conclusion and Future works
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IMAPS 2009, San Jose McEnery Convention Center
Need for a cost effective way of micro through via fabrication technique
Need for high speed processing technique for through via fabrication with high yield throughput
Need for through via fabrication technique compatible with the conventional via fabrication tool
Need for elimination of thermo processing of the substrate during through via fabrication
Need for fabrication of vias with uniform through via wall
Motivations:
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IMAPS 2009, San Jose McEnery Convention Center
Driver Applications:
www.morgantechnicalceramics.com
www.smalltimes.com www.ec.europa.eu – ANASTASIA Project
Transreceiver Base Station for
Cell Phone
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IMAPS 2009, San Jose McEnery Convention Center
Outline:
Motivations and Applications
Different Substrate Materials and Fabrication Techniques
μ-via fabrication by Mechanical punching
Results and Discussion
Conclusion and Future works
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IMAPS 2009, San Jose McEnery Convention Center
Different Material Candidates for the Substrate:
LCP - ULTRALAM 3850 [1]
LTCC - DuPont 951 Green Tape [2]
Kapton - Dupont HN100 [3]
Peel Strength ( lbs/in) 8.52 12 7.2
Tensile strength ( MPa) 200 320 231
Tensile Modulus(GPa) 2.255 120 2.0
Density ( g/cm3) 1.4 3.1 1.42
CTE ( ppm/°C)17 (X & Y axis)
150 (Z-axis)5.8 20
Melting Temp. (°C) 335 738 360
Thermal Conductivity ( W/m/°K) 0.2 3.3 1.09
Dielectric Constant @ 10 GHz, 23°C 2.9 7.1 3.5
Dissipation Factor/Loss Tangent @ 10 GHz, 23°C
0.0025 0.005 0.002
Volume Resistivity ( Mohm) 1x1012 1x1014 1x1017
Dielectric Breakdown Strength (V/mil)
3500 1000 5200
Chemical Resistance 98.7% - 95%
Water Absorption (23°C, 24 hrs) 0.04% - 2.8%
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IMAPS 2009, San Jose McEnery Convention Center
Different Techniques for µ-Via Fabrication :Via Diameter, Substrate
MaterialVia
PitchVia Shape in Z-axis
Aspect Ratio
Damage to Substrate
Speed Cost/Via
Mechanical Punching
30µm, Mylar [8] - UniformLow - 3:1
[8]
Relatively Smooth Surface of the Via
WallHigh
Very Low [11]
Mechanical Drilling
100µm, PCB [6]50µm
[6]Almost Uniform
LowVery Rough
Surface of the Via Wall
Slow Low [11]
Laser Drilling (CO2, YAG,
YVO4 Excimer)
25 to 75 µm, Polyimide - CO2, [4]
10 to 15 µm, Ceramics, PVA, Polystyrene, & Pyrex
Glass - YAG –[5]25µm, LCP - YVO4, [7]
-Very
Uniform [8, 12]
Very High -
20:1 [13]
Carbon Residue Leftover [12]
Smooth Surface of the Via Wall
[13]
Slow Low [4]
Plasma Etching
50 µm, Kepton [10] -Very
UniformHigh
Very Smooth Surface of the Via
Wall
Very Slow
Expensive
E-beam Machining
65 µm, Green Tape [9]200
µm [9]
Very Uniform
[9]High [9]
Very Smooth Surface of the Via
Wall [9]
Very Slow
Extremely Expensive
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IMAPS 2009, San Jose McEnery Convention Center
Outline:
Motivations and Applications
Different Substrate Materials and Fabrication Techniques
μ-via fabrication by Mechanical punching
Results and Discussion
Conclusion and Future works
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IMAPS 2009, San Jose McEnery Convention Center
Via Fabrication – Test Structure:Current Industry (wiSpry) Requirements:
No. of MEMS Switches: 80No. of I/O’s: 56Via Diameter: 90 μmVia Pitch:
300 μm (X-axis)330 μm (Y-axis)
Via Size
Via Pitch (μm)
50 μm 75 100 125 150
75 μm 112.5 137.5 162.5 187.5
100 μm
150 175 200 225
Targeted for Experiments:
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IMAPS 2009, San Jose McEnery Convention Center
How The Punching System Works?
Die Bushing
LCP
Copper
Copper
Pin
LCP
Copper
Copper
Before Punching
Copper
Copper
LCP
After Punching
Copper
Copper
LCP
APS 8718 Automatic Punching SystemPacific Trinetics Corporation
6” x 6” Sample Holder
Punch Pin Holder & Die
Bushing
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IMAPS 2009, San Jose McEnery Convention Center
Outline:
Motivations and Applications
Different Substrate Materials and Fabrication Techniques
μ-via fabrication by Mechanical punching
Results and Discussion
Conclusion and Future work
Tuesday, November 03, 2009 11
IMAPS 2009, San Jose McEnery Convention Center
Mechanical Punching of μ-Via50 µm Via, 75 µm Pitch, 10 x 10 Array
50 µm
20 μm
20 μm
LCP Burr
Consistency of the Via Array Uniformity of Via Size and Shape
Top Cu
Film
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Punching Directions:
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IMAPS 2009, San Jose McEnery Convention Center
Challenges in Mechanical Punching
50 µm Via, 75 µm Pitch, 10 x 10
Array
Expansion
Warpage1. Z-axis Expansion of
the LCP Film2. Warpage of the LCP
sample3. LCP Burr4. Copper Burr
LCP Burr
Copper Burr
Bottom Cu Film
Bottom Cu Film
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IMAPS 2009, San Jose McEnery Convention Center
a)
Via Pitch
Via Diameter
b)
Via Diameter
Via Pitch
d) c)
Mechanism of LCP film Z-axis Expansion :
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Pitch Dependency of the Z-axis Expansion of LCP
Z-axis expansion of the LCP film increases with lower pitch
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Via Size
Via Pitch (μm)
50 μm
75 100 125 150
75 μm
112.5
137.5
162.5
187.5
100 μm
150 175 200 225
Areal Density Dependency of the Z-axis Expansion of LCP
Z-axis expansion of the LCP film increase with higher via arrayTuesday, November 03, 2009 17
IMAPS 2009, San Jose McEnery Convention Center
Via Size
Via Pitch (μm)
50 μm
75 100 125 150
75 μm
112.5
137.5
162.5
187.5
100 μm
150 175 200 225
Pitch Dependency of the Radius of Curvature
Radius of curvature of the LCP film decrease with lower pitch, i.e., high warpage with lower pitch
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IMAPS 2009, San Jose McEnery Convention Center
Via Size
Via Pitch (μm)
50 μm
75 100 125 150
75 μm
112.5
137.5
162.5
187.5
100 μm
150 175 200 225
Areal Density Dependency of the Radius of Curvature
Radius of curvature of the LCP film decreases with smaller via array, i.e., high warpage with smaller via array
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Does μ-Mechanical Punching Has Any Prospect?Current Industry (wiSpry) Requirements:
No. of MEMS Switches: 80No. of I/O’s: 56Via Diameter: 90 μmVia Pitch:
300 μm (X-axis)330 μm (Y-axis)
Via Size
Via Pitch (μm)
50 μm 75 100 125 150
75 μm 112.5 137.5 162.5 187.5
100 μm
150 175 200 225
Targeted for Experiments:
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Outline:
Motivations and Applications
Different Substrate Materials and Fabrication Techniques
μ-via fabrication by Mechanical punching
Results and Discussion
Conclusion and Future works
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Conclusion: μ-vias with 50 µm diameter and 75 µm pitch has been demonstrated Mechanical punching for μ-via fabrication results Z- axis expansion of the LCP film and substrate warpage Lower pitch will results higher Z-axis expansion of the LCP film, which reduced along with higher pitch Higher areal density will results more Z-axis
expansion of the LCP film Smaller pitch will have higher substrate warpage, which reduced with higher pitch Lower areal density will have higher substrate warpage, which reduced with higher via arrayTuesday, November 03,
2009 22IMAPS 2009, San Jose McEnery Convention
Center
Future Direction:
Cleaning of LCP burr and Copper burr
Electroplating of the vias
Electrical characterization of the vias
Lamination of multilayered structure
Electrical Characterization of the laminated structure
Reliability analysis of the laminated structure
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Acknowledgements: Advisor & Dissertation Committee
Members at the University of Arkansas
The National Science Foundation
wiSpry Inc., Irvine, CA
High Density Electronics Center (HiDEC) Staff and Facility
MMR Lab Colleagues
Rogers Corporation
IMAPS 2009
[1] MSDS, ULTRALAM® 3000 - Liquid Crystalline Polymer Circuit Material, Rogers Corporation, Arizona, USA[2] Low Temperature Cofire Dielectric Tape Technical information, 951 Green TapeTM, DuPont Microcircuit Materials[3] Summary of Properties for Kapton® Polyimide Film, DuPont Microcircuit Materials[4] Jim Morrison, Ted Tessier, and Bo Gu, “A Large Format Modified TEA CO2 Laser Based Process for Cost Effective Small via Generation,” MCM Proceedings, pp 369-377, 94[5] Vijay V. Kancharla, Kira K. Hendricks, and Shaochen Chen, “Micromachining of packaging materials for MEMS using laser” Micromachining and Microfabrication Process Technology VII, Proceeding of SPIE, Vol. 4557, pp 220-224, 2001[6] Brian J. McDermott, and Sid Ttyzbiak, “Practical application of photo-defined micro-via technology,” 3rd International Symposium on Advanced Packaging Material, pp 24-28, 1997[7] Mingwei Li, Hix Ken, Dosser Larry, Hartke Kevin, and Blackshire Jim, “Micromachining of Liquid Crystal Polymer film with Frequency converted diode-pumped Nd: YVO4 Laser” Photon Processing in Microelectronics and Photonics II, Proceeding of SPIE, Vol. 4977, 2003[8] Gunter Hagen, and Lars Rebenklau, “Fabrication of smallest vias in LTCC tape,” Electronics Systemintegrations Technology Conference, Dresden, Germany, pp 642-647, 2006[9] M.A. Sarfaraz, C. Long, and You-Wen Yau, “Enhanced MCM-C Packaged Performance by Formation of improved 3-D interconnections,” Electronic Components and Technology Conference, Proceedings, pp 1067-1071, 1993[10] James Keating, and Robert Larmouth, “Microvias and Flex – An enabling MCM-L Technology,” International Conference on Multichip Modules and High Density Packaging, pp 342 -384, 1998[11] T. G. Tessier, and Bill Adams, “Mechanical Punching of Through-Holes in Thin Laminates for Higher Density MCM-L Fabrication” MCM Proceedings, pp 173-181, 1994[12] Dane Thompson, “Characterization and Design of Liquid Crystal Polymer (LCP) Based Multilayer RF Components and Packages” PhD dissertation 2006, Georgia Tech. [13] T. M. Yue, and K.C. Chan, “Laser Drilling of Liquid Crystal Polymer Composites” Polymer Composites, Vol.19, No.1, 1998
References:
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Thank You !
Questions, Comments & Suggestions
Chemical Etching of LCP & Cu Burr
LCP Burr
Copper Burr
Before LCP Burr
Before
Copper Burr
After After
Process Recipe
Micro Pits
Successful etching of loosely bonded LCP and copper burr using the recipe
A
B
C
Mechanically Punched Micro Vias
DI Water Sonication
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Plasma Cleaning of LCP Residual Removal Before O2 Plasma
Cleaning LCP Burr
Copper Etched Out After O2 Plasma
Cleaning
Before O2 Plasma Cleaning
After O2 Plasma Cleaning
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30 Minute O2 Plasma Cleaning After Chemical Etching
LCP and copper burr can be removed very efficiently by chemical etching and oxygen plasma cleaning afterwordTuesday, November 03, 2009 29
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Via Metallization: DC Vs Reverse Pulse Plating (RPP)
DC Plating
Reverse Pulse Plating
Via metallization can be done very efficiently by DC plating as compared to reverse pulse plating in 4.5 Hrs
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