HS0038A2-datasheet

HS0038A2.Vishay Telefunken

1 (7)Rev. 3, 10-Mar-00www.vishay.de • FaxBack +1-408-970-5600Document Number 82110

Photo Modules for PCM Remote Control Systems

DescriptionThe HS0038A2. – series are miniaturized receivers forinfrared remote control systems. PIN diode andpreamplifier are assembled on lead frame, the epoxypackage is designed as IR filter. The demodulated output signal can directly bedecoded by a microprocessor. HS0038A2. is thestandard IR remote control receiver series, supportingall major transmission codes.

94 8691

GNDVS OUT

Features� Photo detector and preamplifier in one package

� Internal filter for PCM frequency

� Improved shielding against electrical field disturbance

� TTL and CMOS compatibility

� Output active low

� Low power consumption

� High immunity against ambient light

� Continuous data transmission possible (800 bit/s)

� Suitable burst length ≥10 cycles/burst

Block Diagram

16108

PIN

Input

AGC

ControlCircuit

BandPass

Demodu-lator

30 k�

1

2

3

VS

OUT

GND


Rev. 3, 10-Mar-00www.vishay.de • FaxBack +1-408-970-5600 Document Number 821102 (7)

Absolute Maximum RatingsTamb = 25�C

Parameter Test Conditions Symbol Value UnitSupply Voltage (Pin 2) VS –0.3...6.0 VSupply Current (Pin 2) IS 5 mAOutput Voltage (Pin 3) VO –0.3...6.0 VOutput Current (Pin 3) IO 5 mAJunction Temperature Tj 100 �CStorage Temperature Range Tstg –25...+85 �COperating Temperature Range Tamb –25...+85 �CPower Consumption (Tamb � 85 �C) Ptot 50 mWSoldering Temperature t � 10 s, 1 mm from case Tsd 260 �C

Basic CharacteristicsTamb = 25�C

Parameter Test Conditions Symbol Min Typ Max UnitSupply Current (Pin 2) VS = 5 V, Ev = 0 ISD 0.8 1.1 1.5 mAy ( )

VS = 5 V, Ev = 40 klx, sunlight ISH 1.4 mATransmission Distance Ev = 0, test signal see fig.7, IR diode

TSAL6200, IF = 400 mAd 35 m

Output Voltage Low (Pin 3) IOSL = 0.5 mA,Ee = 0.7 mW/m2, f = fo VOSL 250 mVIrradiance (38 kHz) Pulse width tolerance: tpi – 5/fo < tpo

< tpi + 6/fo, test signal see fig.7Ee min 0.35 0.5 mW/m2

Irradiance tpi – 5/fo < tpo < tpi + 6/fo Ee max 30 W/m2

Directivity Angle of half transmission distance ϕ1/2 ±45 deg

Application Circuit

ÎÎ

16215

TSAL62..

HS0038A2.2

3

1

4.7 �F *)

�C

>10 k�optional

100 � *) +5V **)

*) recommended to suppress power supply disturbances**) tolerated supply voltage range : 4.5V<VS<5.5V

GND



Suitable Data FormatThe circuit of the HS0038A2. is designed in that waythat unexpected output pulses due to noise ordisturbance signals are avoided. A bandpassfilter, anintegrator stage and an automatic gain control areused to suppress such disturbances. The distinguishing mark between data signal anddisturbance signal are carrier frequency, burst lengthand duty cycle.

The data signal should fullfill the following condition:• Carrier frequency should be close to 38kHz.• Burst length should be 10 cycles/burst or longer.• After each burst which is between 10 cycles and

70 cycles a gap time of at least 14 cycles is neccessary.

• For each burst which is longer than 1.8ms a corresponding gap time is necessary at some time in the data stream. This gap time should beat least 4 times longer than the burst.

• Up to 800 short bursts per second can be received continuously.

Some examples for suitable data format are:NEC Code (repetitive pulse), NEC Code (repetitivedata), Toshiba Micom Format, Sharp Code

When a disturbance signal is applied to theHS0038A2. it can still receive the data signal. Howeverthe sensitivity is reduced to that level that no unex-pected pulses will occure.

Some examples for such disturbance signals whichare suppressed by the HS0038A2. are:

• DC light (e.g. from tungsten bulb or sunlight)

• Continuous signal at 38kHz or at any other frequency

• Signals from fluorescent lamps with electronicballast with low modulation (see Figure A or B).

0 5 10 15 20

time [ms]

Figure A: IR Signal from Fluorescent Lamp with low Modulation

0 5 10 15 20

time [s]

Figure B: IR Signal from Fluorescent Lamp with high Modulation



Typical Characteristics (Tamb = 25�C unless otherwise specified)

0.7 0.8 0.9 1.0 1.1

E

/

E

– R

el. R

espo

nsiti

vity

e m

in

f / f 0 – Relative Frequency

1.3

94 8143

0.0

0.2

0.4

0.6

0.8

1.0

e

1.2

f = f0�5%�f ( 3dB ) = f0/10

Figure 1. Frequency Dependence of Responsivity

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1 1.0 10.0 100.0 1000.0 10000.0

Ee – Irradiance ( mW/m2 )96 12110

pot –

Out

put P

ulse

Len

gth

(ms)

Input burst duration

� = 950 nm, optical test signal, fig.7

Figure 2. Sensitivity in Dark Ambient

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.01 0.10 1.00 10.00 100.00

E – DC Irradiance (W/m2)96 12111

e m

inE

–

Thr

esho

ld I

rrad

ianc

e (m

W/m

)

2 Correlation with ambient light sources(Disturbance effect ) :10W/m2�1.4klx(Stand.illum.A,T=2855 K)�8.2klx

(Daylight,T=5900 K)

Ambient, � = 950 nm

Figure 3. Sensitivity in Bright Ambient

0.0 0.4 0.8 1.2 1.60.0

0.4

0.8

1.2

2.0

E – Field Strength of Disturbance ( kV /m )

2.0

94 8147

1.6

E

–

Thr

esho

ld Ir

radi

ance

( m

W/m

)

e m

in2

f (E )= f0

Figure 4. Sensitivity vs. Electric Field Disturbances

0.01 0.1 1 10 1000.1

1

10

1000

94 9106 �Vs RMS – AC Voltage on DC Supply Voltage (mV)

E

–

Thr

esho

ld Ir

radi

ance

( m

W/m

)

e m

in2

f = f0

10 kHz

100 Hz

1 kHz

Figure 5. Sensitivity vs. Supply Voltage Disturbances

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

–30 –15 0 15 30 45 60 75 90

Tamb – Ambient Temperature ( °C )96 12112

e m

inE

–

Thr

esho

ld I

rrad

ianc

e (m

W/m

)

2

Sensitivity in dark ambient

Figure 6. Sensitivity vs. Ambient Temperature



Ee

T

tpi *

t

* tpi � 10/fo is recommended for optimal function

VO

VOH

VOLt

16110

Optical Test Signal(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)

Output Signal

td1 ) tpo2

)

1 ) 7/f0 < td < 15/f02 ) tpo = tpi � 6/f0

Figure 7. Output Function

Ee

t

VO

VOH

VOLt

600 �s 600 �s

T = 60 ms

Ton Toff

94 8134

Optical Test Signal

Output Signal, ( see Fig.10 )

Figure 8. Output Function

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

10 20 30 40 50 60 70 80 90

Burstlength [number of cycles/burst]16153

Env

elop

e D

uty

Cyc

le

Figure 9. Max. Envelope Duty Cycle vs. Burstlength

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1 1.0 10.0 100.0 1000.0 10000.0

Ee – Irradiance (mW/m2)96 12114

on

off

T

,T

–

Out

put P

ulse

Len

gth

(ms)

Ton

� = 950 nm, optical test signal, fig.8

Toff

Figure 10. Output Pulse Diagram

750 850 950 10500

0.2

0.4

0.6

0.8

1.2

S (

)

– R

elat

ive

Spe

ctra

l Sen

sitiv

ityre

l

� – Wavelength ( nm )

1150

94 8408

1.0�

Figure 11. Relative Spectral Sensitivity vs. Wavelength

95 11339p2

0.4 0.2 0 0.2 0.4 0.60.6

0.9

0°30°

10° 20°

40°

50°

60°

70°

80°

1.0

0.8

0.7

drel – Relative Transmission Distance

Figure 12. Vertical Directivity ϕy



95 11340p2

0.4 0.2 0 0.2 0.4 0.60.6

0.9

0°30°

10° 20°

40°

50°

60°

70°

80°

1.0

0.8

0.7

drel – Relative Transmission Distance

Figure 13. Horizontal Directivity ϕx

Dimensions in mm

96 12116



Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known asozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs andforbid their use within the next ten years. Various national and international initiatives are pressing for an earlier banon these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use ofODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer applicationby the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly orindirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

HS0038A2-datasheet

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