High Voltage

MOSFETs

MO

SFE

Ts

www.FutureElectronics.com/ST

www.FutureElectronics.com/ST

ST has reached a new “low” in high voltage MOSFETs and has beaten its previous record for lowest RDS(on) in several high power packages. In fact, for any given package size, ST’s line-up of high power MOSFETs has the lowest figure of merit and lowest RDS(on) in the industry!

When combined with innovative packaging technologies such as powerFLAT packages or H2 package, ST’s breakthrough technology enables greater efficiency and higher power density. Designers can now easily tackle new regulatory challenges such as the high-efficiency targets of new eco-design directives and conquer thermal challenges in the most demanding applications, leading to more reliable designs. 650V ratings of these MOSFETs provide added peace of mind when compared with industry standard 600V MOSFETs.

Key Features • “Lowest RDS(on) in the industry!” - Best RDS(on) of any 650V MOSFETs in TO-220/TO-247/MAX247 packages• Easy to drive MDmesh super junction • Halogen free package• Higher VDSS rating

• Higher DV/DT capability• Fast switching performance• 100% avalanche tested

Benefits• Reduced costs and complexities associated with heat sinks• Improves MTBF due to better RDS(on) and lower switching losses• Reduces number of parallel MOSFETs• Increased power density, higher electrical efficiency, increased energy savings • Increased ruggedness• More stable and controllable dynamic behavior, lower EMI, optimized filtering

Target Applications

• PowerFactorCorrection (PFC)andDC-DCstage ofSMPSfortelecomand industrial applications

• Fullbridgeandhalfbridge in various inverters for photovoltaic(solar),UPS and motor drives

• Highvoltageswitchin various line voltage regulators, dimmers and solid state relays

New “Low” in High Voltage MOSFETs for very High Power Switching Applications

Best Efficiency and Lowest RDS(on) in the Industry!

MO

SFE

Ts

Tools, Software and Eval Boards• Spice models available in product folder at http://bit.ly/YAwHSo and click on Resources tab

• EVAL BOARD: STEVAL-ISF001V2 - 3KW FOT (FixedOFFTime)PFC dedicated to high power applications with a single STW88N65M5

Technical Documents

• Application note available: AN3994 - “Managing MDmeshTM V and MDmeshTM II super junction technologies”

• For more information please visit http://bit.ly/15jnfXF

New “Low” in High Voltage MOSFETs for very High Power Switching Applications

Best Efficiency and Lowest RDS(on) in the Industry!

PN Package BVDSS(V)

ID(A)

Rds(on)(max)Ω

Ciss(pF)

Qg(nC)

STY139N65M5 Max247 650 130 0.017 15600(VDS=100V) 363

STY100NM60N Max247 600 98 0.029 9594(VDS=100V) 330

STY105NM50N Max247 500 600 0.022 9579(VDS=100V) 326

STW88N65M5 TO247 650 500 0.029 8825(VDS=100V) 204

STP57N65M5 TO220AB 650 650 0.063 4200(VDS=100V) 98

STB57N65M5 D2PAK 650 650 0.063 4200(VDS=100V) 98

STL57N65M5 PowerFLAT 8X8 HV 650 650 0.063 4200(VDS=100V) 110

MO

SFE

Ts

TO220 PowerFLAT TO247 MAX247D2PAK

MDmesh V – New Devices with Lowest RDS(on) on the Market

STW88N65M5 on 2kW PFC vs Competition

www.FutureElectronics.com/ST

Temperature @ 230 Vac

Tem

per

atur

e [º

C]

105

95

85

75

65

55

45

1000 1500 20000power [W]

352500500

STW88N65M5

Competitor 1

Competitor 2

Efficiency @ 230 Vac

Eff

icie

ncy

[%]

98.50

98.25

98.00

97.75

97.50

97.25

97.001000 1500 2000 25000

power [W]

STW88N65M5

Competitor 1

Competitor 2

Up to 30% Lower Temperature

Up to 0.5% Higher Efficiency

MO

SFE

Ts

Ap

ril 2

013

Max247 TO-247 PowerFLAT8x8 HV

DPAK

17 mΩ Max. 650V

29 mΩ Max.650V

69 mΩ Max.650V

220 mΩ Max.650V

STY139N65M5 STW88N65M5 STL57N65M5 STD18N65M5

Over 20% improvement compared to closest competitor