XeTepOnpeXO)];HH 6HnOJIHpHH TpaH3HCTOpH C SiGe 6a3a.

qacT I: TIpe)];HMCTBa,TeXHOJIOrHqeHnpou;ec,

6a30Ba 06JIaCT Ha TpaH3HcTopHTe

reHO tI:HMHTPOB,MOXaMeJl: A. A6J1:YJIa

B Cmal1lU5ll1W ce pa3Z11e:JlCoamnpeou"vtcm6ama Ha SiGe HBT 6 CpaGHeHUe C Si 6UnOIl51pHU XOMon-

peXOOHUmpaH3UCmOpU u GaAs HBT, meXHOllOZUlfllU5lmnpOl{eC Ha U3Z0m65lHe Ha m03U mun mpaH3UC-

Jll0pU U 6oGeOeHUme HOGUmeX1l0110ZUlfHUOnepmjUU - HUCKOlneMnepamypHO XUMUlfllO omllazaHe om

Za30Ga qJa3a GCGpoX6UCOKGaKYYMUJlUnOHUJlCeHOllall5lZaHe, llezupaHe Ha 6a3ama U eMumepa om nOllU-

CUllUtjuii, 6o6eJICOalle Ha KOHmpollupaHa KOmjeHmpmjU51ZepMaHuii GHanpeZHam SiGe 6a30G clloii U m.H.

Oc06eHO GHU"vtaHue e 06oPllamo JiG 065lCHeHUe Ha U3MeHe7IUemO Ha H5lKOUDC U AC napaMempunpu ynompe6a Ha nOllUCW1UljueGeMumep U HanpezHam SiGe clloii, Koemo 600U CoOllwemHO 00 nOGUtue-

Ha erjJeKUGHOCmHa eMUlnepa U H(]JVlCUleHOGpeMe Ha npellumaHe npe3 6a3ama.

jJ,aoeHo e 065lCHeHUeHaYGellUlfeHama nOOGu:JICHOCJllHap-mOKOllocumellume 6 aKmUGHama 6a3a,

C Koemo ce n06UUlaGa npOGooU"vtocmma Ha aKmUGllalna 6a3a. Pa3Z11eoaHUca pa311UlfHUcmpYKmypu Ha

6a306ama 0611acm Ha mpaH3ucmopa om ZlleOHa mOlfKa JiGKOmjeHlllpmjUOHHU51nporj)UJl Ha zepMaHU51.

The aim of this review is to introduce High-Speed Heterojunctiol1 Bipolar Transistors with SiGe

Base (SiGe HBTs). The advantages ofSiGe HBTs over Silicon bipolar junction transistor (Si-BJT) and

GaAs field effect transistor (FET), from the point of view of ultra-high frequency (UHF) applications

and basic construction features are as follows:

Cut-offfi'equency (fT), Current gain (hFFJ, highjrequency noise (f of properly ofGHz); very low

coast, and absence of offset of uCE, lower value of NF and possibility to prepare PNP and PMOStransistors.

Concerning the change of N Ge in the base layer three types of basis transistor structures aredescribed.

E'bp30,D,eHCTBYBaIll,I1Te 6I1nOn5IpHI1 xeTepOnpeXO,D,HI1

TpaH3I1CTOpI1c SiGe 6a3a (SiGe HBT) HaMepI1Xa IlII1-

pOKO npl1J1o)j{eHw~ npe3 nOCJJe,D,HI1Te 10 rO,D,I1HI1B CBp'bX

BI1COKI1qeCTOTI1 (CBQ) aHanOlOBI1Te I1HTerpanHI1 cxe-

MI1(HC) (1,2,9,10,16), HeHaCI1TeHlne n0lI1QeCKI1 HC(Hanp. ECL) (6 +.8, 15) 11BiCMOS HC (3,4,33). Kna-CI1QeCKI1TennaHapHO-enI1TaKCI1allHI1 TpaH3I1CTOpI1 C 113-

KJ1l0QeHI1e Ha Te3I1 C nonI1CI1nI1IJ,I1eB (TIC) eMI1Tep,D,OCTI1rHaXa npe,D,eJIa Ha QeCTOTHI1Te CI1 B'b3MO)j{HOCTI1

B Cpe,D,aTa Ha 80-Te lO,D,I1HI1B'bnpeKI1 npOBe,D,eHOTO ,D,pa-

CTI1QHO MaIll,a6I1paHe B XOpI130HTanHa 11 BepTI1KanHa

nOCOKa 113aM5IHaTa Ha ,D,I1<PY3I10HHI1TenpOIJ,ecI1 C HOH-

HO nerI1paHe (HJI). B Cpe,D,aTaeKpa5I Ha 80- Te rO,D,I1HI1

npI1 Si TpaH3I1CTOpI1 6ellIe B'b3npeTa TeXHOn0lI15ITa Ha

TpaH3I1CTOpI1Te Ha 6a3aTa Ha AIllBv C'be,D,I1HeHI15I- T5IC-

Ha (no,D, 0,5 /lll1, a BnOCJIe,D,CTBI1eno,D, 0,1 /lll1) aKTI1BHa

enI1TaKCI1anHa (enI1) 6a3a; IlII1pOKO npI1JImKeHI1e HaMe-

pI1xa HI1CKOTeMnepaTypHHTe en~-npOIJ,eCH B CBp'bXBI1-

COK BaKYYM - UHV /CVD, JIerHpaHeTo no BpeMe Ha

34

enI1TaKCI1anHH5InpoIJ,ec (in situ doping), TeXHOJIOrWf-

HHTe npOIJ,eCH C e,D,HHHQeHH ,D,BOeHnOnHCHJIHIJ,HH H T.H.

TIpe3 1987 r. 6ellIe ,D,OKJIa,D,BaHO3a H3lOTB5IHeTO Ha

n'bpBHTe xeTepOnpeXO,D,HH 6HnOJI5IpHI1 TpaH3HcTopH CSiGe 6a3a.SiGe cnnaB e C nO-ManKa 1lI11pOQl1Ha Ha 3a6-

paHeHaTa 30Ha H HMa KaTO pe3ynTaT nO-,D,06pH nOCTO-

5IHHOTOKOBl1(DC) H ,D,HHaMW!Hl1 (AC) napaMeTpl1 Ha

TpaH3HcTopHTe 116'bp30,D,eHCTBl1e, cpaBHHMo C TOBa Ha

AIllBv TpaH311CTOpllTe.

SiGe HBT HMaT CJIe,D,Hl1Tenpe,D,HMCTBa npe,D, Si xo-

MOnpeXO,D,HH 6HnOn5IpHH TpaH3HCTOpl1 (5):

1) BHCOKO'bpnH-Hanpe)l(eHHeUA nOpa,D,H nO-Cl1JI-

HOTO JIerHpaHe Ha 6a3aTa;

2) HHCKO C'bnpOTHBJIeHHe fbb' Ha aKTHBHaTa 6a3a;

3) TIo-BI1COKa nO,D,Bl1)j{HOCTHa eJIeKTpOHHTe, KO5ITO

BO,D,H,D,OHaMan5IBaHe Ha BpeMemrra Ha npeJIHTaHe npe3

aKTI1BHHTe 06JIaCTl1 Ha TpaH3HCTOpa (22,28);

4) TIO-Mall'bK KanaIJ,l1TeT Ha eMHTepHl15I npexo,D, CTc no-

pa.n.H nO-CJIa6OTO JIempaHe Ha nOJIl1Cl1JIMIJ,l1eBl15IeMl1Tep;

"E+E", 5-6/2004 r.

5) C'bBMeCTHMocT Ha SiGe TeXHOJTOrlli! C Ta3H Ha

CHJTHIJ;y!eBHTenpH60pH.

ITpe)J;HMCTBaHa SiGe HBT

SiGe TeXHOJTOrH51eBOJTIOHpa MHoro 6'bp30: B nepHo-

)],a 1987 +- 1996r. T5I npeMHHa aT JTa60paTOpeH CTa)J;HH

K'bM npOMHIIIJTeHO npOH3BO)J;CTBO. I1y6JTHKaIJ;HHTe aT

1995 +- 2001r. nOKa3aXa, 'Ie T5I MO)Ke)],a npe)],JTO)KH eB-

THHH CBq H CBp'bX CBq HC 3a TeJTeKOMYHHKaIJ;HOHHH

npHJTO)KeHH5I.

HanpaBeHoTo B (5) cpaBHeHHe Ha napaMeTpHTe Ha

CHJTHIJ;HeBHTexOMonpexo)],HH TpaH3HcTopH (Si BJT), fTH GaAs HBT nOKa3a CJTe)],HOTO:

-TpaH3HTHaTa 'IeCTOTa fTHa SiGe HBT e 1,5 +- 1,7n'bTH nO-BHCOKaaT Ta3H Ha XOMonpeXO)],HHTeSi TpaH-

3HCTOpHH caMO C 5 +- 10 % nO-HHCKa aT fT Ha GaAsHBT;

- np06HBHOTOHanpe)KeHHe BUCEOHa SiGe HBT C

IIIHpOqfiHa HaaKTHBHaTa 6a3a WB = 0,1 /lill e 5 +-5,5v, C'bOT-

BeTHO npH WB = 0,025/lill (250 A) BUCEO= 2,5 +- 3,Ov.GaAs HBT HMa OKOJTO2 n'bTH nO-BHCOKH CTOHHOCTH

Ha U(BR)CEO;- OCHOBHO npeHMyru:ecTBo Ha Si 6HnOJT5IpHH TpaH-

3HCTOpH e B'b3MmI<HOCTTa )],a ce H3roTB5IT P-KaHaJTHH

MOS (PMOS) H PNP TpaH3HcTopH- npH GaAs HBTTOBa e HeB'b3Mm!<H0 (5);

- TepMH'IHaTa npoBo)],HMOCT Ha Si TpaH3HcTOpH e

TPH n'bTH nO-BHCOKa aT Ta3H Ha GaAs HBT;

- lIf-IllYM'bT NF npH 'IeCTOTH 1 +- 2 GHz Ha SiGe

TpaH3HcTopH e C 20% nO-HHC'bK.

OCHOBHOTO npe)],HMcTBO Ha GaAs HBT e Bce oru:e

nO-BHCOKaTa TpaH3HTHa 4eCTOTa fT H MaKCHMaJTHaTa

'IeCTOTa f - TOBa 03Ha4aBa nO-BHCOKO YCHJTBaHe Harnax

YCHJTBaTeJTHOTOCThnaJTO npH CBq npHJTmKeHH5I.

I10-)],06pHTe eJTeKTpH4ecKH napaMeTpH, BKJT.YCHJT-

BaHeTO no TOK hFE Ha "HanperHaTHTe" SiGe CJTOeBe B

cpaBHeHHe C HeHanperHaTHTe TaKHBa )],OBe)],oxa )],0

IIIHpoKoMaru:a6Ho npoH3BO)],CTBO Ha SiGe HBT H SiGe

MOSFET. I1pH MOS TpaH3HcTopHTe ce 0'IepTaBa, KaK-

TO 6eIlle nOC0'IeHO no-rope, HapaCTBar.u; HHTepec K'bM

P-KaHaJTHHTe TpaH3HCTOpH nopa)],H 'IeCTOTHHTe HM npe-

)],HMCTBaB cpaBHeHHe C Si xOMonpexo)],HH PMOS TpaH-

3HCTOpH, 'IHHTO )],HHaMJIlIHH napaMeTpH orpaHH'IaBaxa'IeCTOTHH5I )],Hana30H Ha CMOS HC.

C'bmacYBaHeTo no BXO)],H H3XO)],H Me)K)],YYCHJTBa-

TenHHTe CThnaJTa Ha CBq HC nOCTaBH Ha )],HeBeH pe)],

HHTerpHpaHeTO Ha SiGe HBT B MOHonHTHH HC.

Dp~ 3an0'IBaHe Ha npoMHilineHo npOH3Bo)],CTBO Ha

SiGe HBT Tp5I6BaIlle)],a ce peillaT cne)],HHTe np06neMH:

1) OTnaraHe Ha Ka4eCTBeHH SiGe enH-CJTOeBe B'bpXY

CHnHIJ;HeBHTe nO)],JJO)KKH.DpH TpaH3HcTopHTe B MOHO-

JTHTHOHHTerpanHo H3n'bnHeHHe, OTJJaraHeTO Ha SiGe-

"E+E", 5-6/2004 r.

"'f!!:......

-~- ~..-"",,;.. ,~, _'N~'W~

6a30B cnoH ce npaBH B'bpXYSi nJTaCTHHaC KapTHHa Ha

n+-CKpHTH5IKoneKTopeH CJTOH.OCHoBeH np06neM 3a

pa3peillaBaHe e nonY'IaBaHeTo Ha HanperHaT;c KOHTpO-

nHpaHa CTeneH Ha )],ecPopMaIJ;H5ISiGe CJJOH.Dopa)],Hpa3nHKaTa Me)K)],YpeilleTh'IHHTe KOHCTaHTH Ha Si H GeB'b3HHKBaT )],HcnOKaIJ;HH Ha HeC'bOTBeTCTBHe.

OTnaraHeTo Ha BHCOKOKa4eCTBeH HanperHaT cnOH e

npe)],MeT Ha pe)],HIJ;a H3cne)],BaHH5I (19,20). CnO5IT MO)Ke

)],a ce CM5ITa 3a cTa6HJJeH npH )],ecPopMaIJ;H5I nO-MaJTKa

aT He06xo)],HMaTa 3a npHnn'b3BaHe Ha )],HcnOKaIJ;HHTe;

aKO MexaHH4HaTa )],ecPopMaIJ;H5I e )],OCTaTh'IHa 3a 06pa-

3YBaHe Ha )],HCJJOKaIJ;HHnpH HaJTH'IHe Ha npe)],BapHTen-

HO C'bru:ec-TBYBar.u; )],ecPeKT, enHTaKCHanHH5IT CJJOH eMeTaCTa6HJJeH.

2) CTpor KOHTpOJJ Ha TepMH'IHH5I npoIJ;ec cne)], HHC-

KO- HnH cpe)],HoTeMneparypHoTo enH-OTnaraHe C IJ;en

CBe)K)],aHe )],0 MHHHMYM Ha npepa3npe)],eneHHeTo Ha

nerHpar.u;H5I npHMec B aKTHBHaTa (T.Hap. "B'bTpeulHa")

6a3a;

3) HaMaJT5IBaHe Ha napa3HTHHTe KanaIJ;HTeTH;

4) YCBO5IBaHe Ha HOBH TeXHonorH'IHH npOIJ;ecH: MO-

neKYJT5IpHO-JT'b'IeBa enHTaKCH5I MBE, XHMH4HO OTJJara-

He aT ra30Ba cPa3a B CBp'bXBHCOK BaKYYM, peaKTHBHO

HOHHO eIJ;BaHe, 6'bp3 TepMH'IeH OTrpeB RTA, 6'bp30 JJe-

rHpaHe aT ra30Ba cPa3a RVD, nerHpaHe "Ha M5ICTO" Ha

nonHCHnHIJ;HeBH5I eMHTep, CaMOC'bBMeCTeHa 6HnOn5Ip-

Ha TeXHOJJOrH5I SABT C )],BoeH nOnHCHJJHIJ;HH, H3OJTa-

IJ;H5I C TeCHH KaHaBKH TIT, TeXHOnOrH5I Ha cPopMHpaHe

Ha nJJHTKH PN npexo)],H SJFT H T.H.

I1oHe)Ke SiGe HBT C nonHCHnHIJ;HeB eMHTep HMa

BHCOKa ecPeKTHBHoCT Ha eMHTepa, TOBa n03BOn5IBa )],a

ce HaMaJTH KOHIJ;eHTpaIJ;H5ITa Ha repMaHH5I NGe B 6a3aTa

Ha TpaH3HcTopa, KoeTO aT CBO5I CTpaHa nOHH)KaBa

nn'bTHOCTTa Ha )],HcnOKaIJ;HHTe Ha HeC'bOTBeTCTBHe H

OTTaM ce npeMHHaBa K'bM no-cTa6HJJeH enHTaKCHaJTeH

cnOH. DOHH)KaBaHeTO Ha NGe HMa or.u;e e)],HO npe)],HM-CTBO: HaMaJT5IBa BepO5ITHOCTTa OT B'b3HHKBaHeTO Ha Ka-

HanH - T. Hap. "pile-up" - ecPeKT, )],'bJJ)Karu:ce Ha

npepa3npe)],eneHHeTO Ha repMaHH5I npH OKHcneHHe B

HapaCTBar.u;H5I OKHC H OTTaM "OKHCHO YCKopeHa )],HcPY-

3H5I" OED. 3a H365IrBaHeTOH ce H3nomYBa KOM6HHa-IJ;H5IaT OKHCJJeHHe npH BHCOKOHaJT5IraHe H to = 600 +-ox

700°C, a Ha HHTepcPei1ca SiO/Si ce OTJJara OKHCHa

B'b3maBHHIJ;a,nOKpHTa C Si3N4.

ITO)J;BH)KHOCTHaP-TOKOHOCHTeJIHTeB HanperHaTSiGe CJIoii::

I1pH npOeKTHpaHe Ha SiGe TpaH3HcTopH (TpaH3Hc-TOpH C SiGe 6a3a), )],e6eJTHHaTaHa SiGe cnoi1 e Ba)KeH

KOHCTpYKTHBeHnapaMeThp. MaKcHMaJTHaTa(T.Hap. KPH-TH'IHa) )],e6enHHa cnope)], (21) e )],e6enHHaTa Ha cn05l,

no)], KO5ITOe eHepreTH4ecKH npe)],no4HTaTenHo 4aCT aT

35

I

eHepnl5lTa )J,a ce TpaHCcpOpMHpa no)J, cpOpMaTa Ha )J,HC-

JIOKaUHH Ha HeC'bOTBeTCTBHe Ha XeTepOemnaKCHaJIHH5I

HHTepcpeHC.

TIpH MaJIKH KOHueHTpaUHH N AHa JIempallJ,H5I aKuen-

TopeH npHMec B 6a3aTa, nO)J,BH)l<HOCTTa mp Ha TOKOHO-

CHTeJIHTe HaMaJI5IBa C HapaCTBaHe Ha NGe nopa)J,H

pa3ceHBaHe OT CnJIaBTa SiGe, KoeTO )J,oMHHHpa Ha)J,

pa3CeHBaHeTo OT aTOMHTe Ha )J,onaHTa. TIpH nO-CHJIHO

JIerHpaHe Ha 6a3aTa, OTHOCHTeJIHaTa qaCT Ha pa3ceHBa-

HeTO OT CnJIaBTa Cnp5lMO 06llJ,OTO pa3CeHBaHe HaMaJI5I-

Ba. 3ae)J,Ho C HH)J,YUHpaHOTO OT HanperHaTH5I CJIOH

HaMaJIeHHe Ha ecpeKT11BHaTa MaCa Ha TOKOHOCHTeJI11Te

B CHJI11U115ImeITSi npH HapaCTBaHe Ha KOHueHTpaU115ITa

Ha Ge B en11-CJIO5l, TOBa BO)J,11)J,O HapaCTBaHe Ha IIp B

HanperHaT115I SiGe CJIOH (28).TIp11 CTaHHa TeMnepary-

pa ecpeKT11BHaTa nO)J,BH)l<HOCTHa )J,ynK11Te ilLs B Hanper-

HaT SiGe CJIOH e C 50% nO-BHCOKa OT IIp B Si.

Ha cpHr.1 e nOKa3aHa 3aB11CHMOCTTa IIp = f(% Ge)npHNA = 1017cm-3.

VJ;>--

ro ":-':I: C0rof- 0.f- :::t0 :=0 ~t? <!)~ f-:= :=~ 0t::( 00 :r:

~ ~0f-

$)Ot

300

rr -3

10 Cm ;:

~500

400

200

BIDK,lJ,a ce, qe IIp B paBH11HaTa Ha paCTe)l{ e nO-BHCO-

Ka OT nO)J,BH)l{HOCTTa Ha p-TOKoHOC11TeJI11Te B nOCOKa

nepneH)J,11KYJI5IpHa Ha paBHHHaTa Ha HapaCTBaHe, KaTO

H )J,BeTe nO)J,B11)l{HOCTHca nO-B11COKH OTTa3H Ha HeHan-

perHaTH5I SiGe CJIOH IlULS' I1opa)J,11 Hanpe)l{eHHeTO Ha

CBHBaHe GCBB paBHHHaTa Ha paCTe)l{ Ha SiGe CJIOH, Ba-

JIeHTHaTa 30Ha Ha CnJIaBTa SiGe ce CBHBa, KoeTO pe3YJI-

THpa B HaMaJI5IBaHe Ha meff Ha p-TOKoHOC11TeJIHTe.

CJIe)J,OBaTeJIHO, ilLs> IlULS :

(1) IlSiG/llsi;::; meffSi 1meffSiGe

B (22), 6a3HpaHK11 ce Ha nO)J,BIDKHOCTTa Ha KOMnpe-

c11paHH SiGe CJIOeBe, e nO-COqeHO CJIe)J,HOTOypaBHe-

H11e 3a IlLsp B SiGe 6a3a Ha TpaH311cTopa:

(2) 'IlLsp = Ilpmin + IIp/ {1 + N/2,35.1 017)]O.9}

36

Kb)J,eTO:

(3) Ilpmin= 44 - 20x + 850x2;

"x" - qaCTTa Ha Ge B SiGe CnJIaB (Hanp. O,l11JI110,2).

OTJIaraHe Ha SiGe CJIOU

KaKTo 6erne nOCOqeHO, SiGe CJIOH MO)l{e )J,a ce OT-

JIQ)Im qpe3 Pa3JI11qHH HHCKO- H cpe)J,HoTeMneparypHH

npouecH: MOJIeKYJI5IpHa enHTaKC115I, X11MHqHO OTJIara-

He OT ra30Ba cpa3a B CBp'bXBHCOK BaKYYM HJIH npH no-

HlI)KeHO HaJI5IraHe H T.H. OTJ1araHeTO ce npOBe)K)J,a npH

to = 550 -;- (600 -;- 650)OC C NGe:::; 15%. TIoHlI)KeH11eTo

Ha KOHueHTpaU115ITa Ha Ge B CJ1051nO3BOJI5IBa)J,a ce YBe-

JI11qH TeMneparypaTa Ha OTJIaraHe Ha CJIO5l.

I1pH n'bpBOHaqaJIH11Te eKcnepHMeHTH e H3nomYBa-

Ha MBE, KaTO np11 H5IKOHOT T5IX 6e3 npeK'bCBaHe Ha

npoueca (T.e. "Ha M5ICTO") ca OTJIaraH11 nOCJIe)J,OBaTeJI-

HO KOJIeKTOpHH5IT, 6a30BH5IT H eMHTepHH5IT CJ10H Ha

TpaH311cTopa, CJ1e)J,KoeTO nocpe)J,cTBoM Me3a-eUBaHe ce

cpopMHpa CTpYKTypaTa MY.

flempallJ,H5IT npocpHJI Ha TaK'bB TpaH311CTOp, onpe-

)J,eJIeH C SIMS, e nOKa3aH Ha cpHr. 2, a Ha cp11r. 3 - Ha-

npeqHOTO CeqeH11e Ha TpaH311cTopHaTa Me3a-cTpYKrypa.

10~

~ JOllS0

L.-Jto:::=

~IOlg0..f-:I:<!)::f25 1011

~

nee

~5~a~

. \Jc-~10'3

a O.t O.Z 0.3 (),,4

):(bJI6oQHHa [Il m]

C/Ju2.2JIe2upaUjUnporjJuJluHa mpmBucmop

'0.5 a.s

.......------......K OJIeKTop

C/Ju2.3Hanpe'lHO Ce'leHUe Ha mpaH3ucmop c Me3a-cmpyKmypa

"E+E", 5-6/2004 r.

KOHI.~eHTpa~mlTa Ha repMaHH51 e paBHOMepHa noCeqeHHeTOHa 6maTa H CThnaJIHa B 06JIaCTHTe Ha 06eM-

HH513ap51)],Ha eMHTepHH51H KOJIeKTOpHH51PN npexo-

)],H. lllHpoqHHa Ha aKTHBHaTa 6ma W B = 1000 E H

NOe = 12% onpe)],eJI51T YCJIOBH51)],OCTa no)], KpHTHqHa-

Ta )],e6eJIHHa. 3a npe)],oTBpaT51BaHe Ha peJIaKCa~H51Ta

Ha HanperHaTH51 CJIOMce H3nOJI3YBaTHHcKoTeMnepa-

TyPHH(to < 600°C) npo~eCH.

OCHOBHH CTpYlnypH Ha 6a30BaTa 06JIaCT HaSiGe HBT

I1oKmaHaTa Ha <pHr.3 cTpYKTypa cna)],a K'bMITbpBa-

Ta OT TpHTe CTPYKTypHHa 6moBaTa 06JIaCT Ha SiGeHBT:

1) I1'bpBaTa cTpYKTypa ce xapaKTepH3Hpa C nOCTO-

5lHHa(T.Hap. "paBHoMepHa") KOH~eHTpa~H51Ha Ge noCeqeHHeTO Ha ~51JIaTa6moBa 06JIacT. I1o-MaJIKaTa IIIH-

pOqHHa Ha 3a6paHeHaTa 30Ha L1EHa SiGe B cpaBHeHHe

C L1E(Si)HMa KaTO pe3YJITaT no- MaJI'bK 6apHep 3a HmKeK-~I15lTa Ha eJIeKTpOHHTe OT eMHTepa B 6maTa Ha TpaH3H-

CTopa. B pe3YJITaT Ha TOBa, npH )],a)],eHa nJI'bTHOCT Ha

TOKa Ha eJIeKTpOHHTe In, nJI'bTHOCTTa Ha TOKa Ha .n.yn-

KHTe J Ha HH)KeKTHpaHHTe OT 6maTa B eMHTepa p-TO-p

KOHOCHTeJIH HaMaJI51Ba, KoeTO BO)],H)],0 nOHJ1)KeHHe Ha

BpeMeTo Ha npeJIHTaHe "t Ha eMHTepa(18) H nOBHIlle-e

HHe Ha YCHJIBaHeTO no TOK hFE'

BHCOKaTa KOH~eHTpa~H51 Ha repMaHH51, He06xo)],H-

Ma 3a CBHBaHe Ha BaJIeHTHaTa 30Ha, e H3TOqHHK Ha )],HC-

JIOKa~HH Ha HeC'bOTBeTCTBHe H YCKopeHa )],H<PY3H51Ha

JIerHpall(H51 npHMec.

2) BTOpaTa cTpYKTypa (25) ce xapaKTepH3Hpa c 113-

MeHeHHe Ha KOH~eHTpa~H51Ta Ha repMaHH51 no CeqeHHe

Ha SiGe CJIOM, KaTO NOe = 0 npH eMHTepHH51 npexo)], H

NOe =NOemax npH KOJIeKTOpHH51PN npexo)],. KOH~eHTpa-

~HOHHH51Tnpo<pHJI Ha Ge C'b3)],aBa eJIeKTpHqHO nOJIe c

HHTeH3HTeT:::::: 104 vi cm, KoeTO HaMaJI51Ba BpeMeTO \ Ha

npeJIHTaHe Ha TOKOHOCHTeJIHTe npe3 6maia.E<peKTHB-

HOCTIa YHa eMHTepa 06aqe He ce npOMeH5l, nOHe)Ke eMH-

TepHH5l.T npexo)], e Ha npaKTHKa xOMonpexo)], (Noe = 0),

OT KoeTO CJIe)],Ba qe "te He HaMaJI51Ba,a hFE ce YBeJIHqaBaB cpe)],Ha CTeneH.

3) BnOCJIe)],cTBHe(26) 6eIlle H3npo6BaHa TpaH3Hc-

TopHa cTpYKTypa C'bCcpe)],HOHHBOHa NOe npH eMHTep-HH51npexo)], H nJIaBeH (nocTeneHHo H3MeH51ll( ce)

npo<pHJI Ha Ge no CeqeHHeTO Ha SiGe CJIOM.

XapaKTepHo 3a T03H THn cTpYKTypa e TOBa, qe IIIH-

pOqHHaTa Ha aKTHBHaTa6ma ce 1136Hpa TaKa, qe )],a Hece 06pmYBaT )],on'bJIHHTeJIHH)],HCJIOKa~HHHa HeC'bOT-

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JIerHpaH nOJIHCHJIH~HM, KoeTO npaBH T03H THn CTPYK-

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~HeBHTe 6HnOJI51pHH TpaH3HcTopH C nOJIH-CHJIH~HeB

eMHTep; 6mOBH51T )],onaHT C'bll(O MO)Ke )],a ce B'bBe)],e C

)],H<pY3H5l.OT JIempaH nOJIHCHJIH~HM.

CHJIH~HeBHTe TpaH3HcTopH C mIaBHa 6a3a ca no)],-

XO)],51ll(H3a )],BoMHa )],H<pY3H51(27), nOHe)Ke )],H<PY3H-

OHHH51TKoe<pH~HeHT Ha 60pa B repMaHH51 (H OTTaM B

SiGe 6ma) e nO-MaJI'bK OTTO3HB Si (28), KoeTO npe.n.-

nOJIara )],OCTa no-cJIa60 H3MeHeHHe Ha JIerHpall(H51

npo<pHJI Ha 60pa no BpeMe Ha CJIe)],Ball(HTeTepMHq-

HH onepa~HH.

Bellie eKcnepHMeHTHpaHa aKTHBHa 6ma, npH KO51-

TO 60p'bT ce BKJIlOqBain-situ B SiGe CJIOM(25,29,30),

KaTOH51KOHI13roTBeHH Oll(e npe3 1990 + 1992r. TpaH-

3HCTOpH HMaT BneqaTJI51Ball(a TpaH3HTHa qeCTOTa

(fT = 73 + 75 GHz) (29,30); npH )],Pym )],onaHT'bTceB'bB)K)],aqpe3 fiJI, KoeTO 3aTpY)],H51BanOJIyqaBaHeTo Ha

aKTHBHa 6a3a C MaJIKa )],e6emma nopa)],H He06xo)],H-

MH51 oTrpeB 3a OTCpaH51BaHeHa B'bBe)],eHHTe C fiJICTPYKTypHHHapYIlleHH51.

H3BOfJ;H

1) HanpaBeHo e cpaBHeHHe Me)K)],YSiGe HBT, KJIa-

CHqeCKHTe Si 6HnOJI51pHHTpaH3HcTopH H GaAs HBT

.Si xeTeponpexo)],eH TpaH3HCTOp C SiGe 6ma ca C no

)],06PH AC H DC napaMeTpHp, 6bp30)],eMcTBHe H ~eHa.

2) B TeXHOJIOmqHH51npo~ec Ha H3roTB51HeHa SiGe

HBT B'bBe)],eHHHOBHTeXHOJIOrHQHHonepa~HH: HHCKO-

TeMnepaTypHo UHV ICVD-OTJIaraHe, MOJIeKYJI51pHOJI'b-

qeBa enHTaKCH51,6'bp3 TepMHqeH oTrpeB, JIerHpaHe Ha

eMHTepa H 6maTa OTnOJIHCHJIH~HMH T.H.

3) XapaKTepHHTe oc06eHocTH Ha cTpYKTypaTa Ha

SiGe HBT: ca nOJIHCHJIH~HeB eMHTep C BHCOKa e<peK-

THBHOCT, "HanperHaT" SiGe 6moB CJIOMC MaJIKa )],e6e-

JIHHa, CHJIHOJIerHpaHa aKTHBHa 6ma H KOHJ4TOBO)],I15l$1T)],0 nOJIyqaBaHe Ha nOBHCOKO bpJIH Hanpe)KeHHe H no)],-

BH)KHOCT Ha eJIeKTpOHH.

4) Pmme)],aHH ca OCHOBHHTeCTPYKTypHHa 6moBa-Ta 06JIaCT Ha SiGe HBT OTme)],Ha TOqKa Ha KOH~eHT-

pa~HOHHI15lnpo<pHJI Ha Ge B 6maTa.

JUITEPATYPA

[1] B. van Haaren, M. Regis et aI.,Low Frequency NoiseProperties of SiGe HBT's and Applications to Ultra-LowPhase-Noise Oscilators, IEEE Trans. on Microwave Theoryand Tech., voI.46, No 5, pp 42 + 51, May 1998.

[2] SiGe Sets Pace in RF IC Race, MicrowaveEngineering, pp 15 + 18, March 2002.

[3] M.Racanelli, K.Schuegraf et aI., Ultra High SpeedSiGe NPN for Advanced BiCMOS Technology, p. 263,IEDM Tech. Dig., 2002.

[4] T.H.Ning, Why BiCMOS and SOl BiCMOS, IBMResearch & DeveI., voI.48, No 23, pp 181 + 186, MarchiMay 2002.

37

[5] K.Neelis,K.Choi et aI.,A ComparisonofSi BJT,SiGeHBT and GaAs HBT Technologies for Linear Handset P.A.Applications, SayWorksSolutions Inc., September 9, 2002.

[6] D.L.Harameet al.,A HighPerfonnance Epitaxial SiGe-base ECL BiCMOS Tech-nology, lEDM Tech. Dig., pp 19 -;-22, 1992.

[7] F.Satoet aI., Sub-20 ps ECL Circuits with 50 GHz fmo.,Self-Aligned SiGe HBT's IEDM Tech. Dig., pp 397 -;-400,1992.

[8] TUchino et aI., Very-High-Speed Silicon BipolarTransistorswith in-situ Doped Polysilicon Emitter and RapidVapour-PhaseDoping Base, IEEE Trans. on ED, vol.42, No3, pp 406 -;-412, March 1995.

[9] D.L.Harame, J.H.Comfort et aI., SiGe Epitaxial-BaseTransistors: Part II:, Process Integration and AnalogApplications, IEEE Trans.on ED, ED-42,p 469, March 1995.

[10] R.Gutzfried, EBeiswanger, S.Gerlach, Design ofRFIntegrated Circuits using SiGe Bipolar Technology, BCTMTech. Dig., p.51, 1997

[11] D.L.Harame" J.H.Comfort et aI., Si/SiGe Epitaxial-BaseTransistors:Part I: Ma-terials,Physicsand Circuits,IEEETrans. on ED, ED-42, pp 455 -;-468, March 1995.

[13]R.Clmlz,M.Jostet aI.,A Fully Self-AlignedEpitaxial-Base Transistor, VLSI Tech. Dig., pp 89 -;-90, June 1989.

[14] J.N.Burghartz et aI., Selective Epitaxy for Transistor(SEBT), IEEE on ED Lett., vol.9, No 5, pp 259 -;-261, May1988.

[15] IN.Burghartz, J.H. Comfort etal., Sub-30 ps ECLCircuits using High fTSi and SiGe Epitaxial Base SEEWTransistors, lEDM Tech. Dig., pp 297 -;-300, 1990.

[16] L.H.Cammitz, N.MolI, An Analysis of Cutoff-Frequency Behavior of Microwa-ve Heterostructure BipolarTransistors, Compound Semiconductor Transistors, San-dipTiwari, New York, IEEE Press, pp 41 -;-42, 1993.

[17] J.N.Burghartz et aI., Identification of ParameterDepletion and EmitterPlug Eff-ects in Deep-Submicrometer,Shallow-Junction Polysilicon Emitter Bipolar Transis-tors,IEEE Trans. on ED, ED-39, pp 1477-;-1489, 1992.

[19] lWMathews, A.E.Brakeslee, Defects in EpitaxialMultilayers. Part I; Joum. of Crystal Growth; vol.27, pp 118-;-125, 1974.

[20] 1 WMathews, A.E.Brakeslee, Defects in EpitaxialMultilayers. Part 1;Joum. of Crystal Growth; vo1.32,pp 265-;-273,. 1979.

[21] J.H. van der Merve, Crystal Interfaces: Part I. Semi-Infinite Crystals, Jour. of Appl. Phys., vo1.37,P 117, 1963.

[22] T.K.Carns, S.K.Chun et aI., Hall MobilityMeasurements in Heavily Doped Si'.xGexStrained Layers,IEEE Trans. on ED, ED-4I, P 1273,1994. .

[23]TI.Camins et aI.,Small-Geometry,High PerformanceSi- Sil-xGexHeterojunc-tionBipolarTransistors,IEEE Electr.Dev. Lett., voUO, pp 503 -;-505, November 1969.

38

[24] TI.Camins, U.Nauka et aI., High FrequencySi/ Sil.xGexHeterojunction Bipolar Transistors, IEDM, Paper27.3, pp 647 -;-650, December 1989.

[25] G.L.Patton, J.M.e.Stora et aI., SiGe HeterojunctionBipolar Transistors: Physics and Design Issues, IEDM Tech.Dig., pp 13 -;-16,1990.

[26] lK.Comfort, E.F.Grabbeet aI.,SingleCrystal EmitterCap for Epitaxial Si and SiGe Base Transistors, IEDM Tech.Dig., pp 857 -;-860, 1991.

[27] D.Vook,TI.Camins et aI., Double-Diffused GradedSiGe-Base Bipolar Transis-tors, IEEE Trans.on ED, ED-4],No 6, pp 1013-;-1016, 1994.

[28] J.L.Hoyt et aI., Comparison of Boron Diffusion in Siand Strained Sil.xGexEpitaxial Layers, Appl. Phys. Lett.,vo1.62,pp 612 -;-614, 1993.

[29] G.L.Patton, J.K.Comfort et aI., 75 GHz fTSiGe BaseHeterojunction Bipolar Transistors, IEEE Electr. Dev. Lett.,voUl, pp 171 -;-173,April 1990.

[30] E.F.Grabbe,lH.Comfort et aI.,73 GHz Self-AlignedSiGe-Base Bipolar Tran-sistors with Phosphorous-DopedPolysilicon, IEEE Electr. Dev. Lett., voU3, pp 259 -;-261,May 1992.

[3I] G.Niu,Q.Liang et aI.,RF LinearityCharacteristics ofSiGe HBT's, IEEE on Microwave Theory and Tech., vo1.49,No 9, pp 1558 -;-1565, September 2001.

[32] lTang, G.Niu et aI., Modeling and CharacterizationofSiGe HBT Low-Frequen-cyNoise Figures-of-Meritfor RFICApplications, IEEE on MicrowaveTheory andTechniques,vo1.50,No 11,pp 2467 -;-2473, November 2003.

[33]M.P.Brassington,M.H. el Diwanyet aI.,AnAdvancedSingle_Level Polysilicon Submicrometer BiCMOSTechnology, IEEE Trans. on ED, ED-36, pp 712 -;-719,April1989.

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