H.-G. Moser Max-Planck-Institut für Physik MPI Semiconductor Laboratory (Halbleiterlabor: HLL)...
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Transcript of H.-G. Moser Max-Planck-Institut für Physik MPI Semiconductor Laboratory (Halbleiterlabor: HLL)...
H.-G. MoserMax-Planck-Institut
für Physik
MPI Semiconductor Laboratory(Halbleiterlabor: HLL)
Common project of the:
Max-Planck-Institut fuer Physik (Werner Heisenberg Institut), Munich
Max-Planck-Institut fuer extraterrestrische Physik, Garching
Founded in 1992, since 2000 located in the Siemens plant in Neu-Perlach,Munich
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H.-G. MoserMax-Planck-Institut
für Physik
HLL Facilities
800m² cleanroomClass 16“ production line
Thermal oxidationPhotolithography (double sided, mask and laser writer)Wet chemical ethingIon implantationLTONitridePolysiliconAl-sputtering
H.-G. MoserMax-Planck-Institut
für Physik
3
Sensor Thinning
?
Process backsidee.g. structured implant
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
sensor wafer
handle wafer
1. implant backsideon sensor wafer
2. bond sensor waferto handle wafer
3. thin sensor sideto desired thickness
4. process DEPFETson top side
5. structure resist,etch backside upto oxide/implant
Industry: TraciT, GrenobleHLL HLL main lab HLL special lab
Wafer bondingSOI process
Thinning of top wafer (CMP)
Processing etching of handle wafer (structured)
diodes and large mechanical samples Belle II module
Need thin (50µm-75µm) self supporting all silicon module
H.-G. MoserMax-Planck-Institut
für Physik
4
MPI 3D R&D Program
Build demonstrator using ATLAS pixel chip (FE-I2/3) and thin pixel sensors made by MPI (complete wafers with FEI2, FEI3 chips available!)
Interconnection with SLID and ICV technology by Fraunhofer IZM
Demonstration of postprocessing of standard ASICs with via last
More by Anna Macchiolo
test sensors (strip, pixel)on 75mm and 150µm SOI wafer
H.-G. MoserMax-Planck-Institut
für Physik
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Sensors
In house production onFZ-SOI material (2 kcm)
Detector wafer thickness75 µm and 150 µm
p- and n-type materialp-spray insulation
Udep 20V and 80V(before irradiation)
~ 100% CCE at 1016 n/cm²
75 µm
H.-G. MoserMax-Planck-Institut
für Physik
Bump Bonding Preparation
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Preparation for bump bonding: UBM (under bump metal)
FlexDCD/DHP
Switcher
H.-G. MoserMax-Planck-Institut
für Physik
1st Cu/Sn Wafer at the HLL
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Belle II TDR review
November 2010
H.-G. MoserMax-Planck-Institut
für Physik
Summary
The MPI semiconductor laboratory offers worldwide unique possiblities to develop and produce novel types of silicon detectors
Complementary to industrial production:
High purity material (full depletion)Double sided processingLarge area devices (wafer size)
For AIDA: thin pixel sensors with UBM (copper on Ti/W)
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