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Graphene and

2D electronicsGiuseppe Iannaccone - Universit di Pisa

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Semiconductor electronics1947 - transistor

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Semiconductor electronics1947 - transistor

1961- first chip

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Semiconductor electronics1947 - transistor

1961- first chip

2012 Intel Core i73B transistors 22 nm

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Nanotransitors are

smaller than a virus

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Why do we need all these

transistors?

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Why do we need all these

transistors?

Atari PONG (1976)3000 transistors

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Why do we need all these

transistors?

Atari PONG (1976)3000 transistors

FIFA 14(2013)

500+ milions transisors

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Not your dads transistor(neither your elder brothers one)

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Not your dads transistor(neither your elder brothers one)

2001

130 nmSilicon

SiO2poly gate

Planar [2D]

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Not your dads transistor(neither your elder brothers one)

2001

130 nmSilicon

SiO2poly gate

Planar [2D]

2011

22 nmStrained silicon/Ge

High K/Metal gate

3D

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Not your dads transistor(neither your elder brothers one)

2001

130 nmSilicon

SiO2poly gate

Planar [2D]

2011

22 nmStrained silicon/Ge

High K/Metal gate

3D

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Graphene(Manchester UK 2004)

h i j t t i l

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raphene is just one atomic laye

of graphite

Can it be a newmaterial ?

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In 2004 A. Geim and K. Novoselov

isolated and characterised graphene at

Manchester Univ.

2010 Nobel Prize for "for

groundbreaking experiments

regarding the two-dimensional

material graphene

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A material with

exceptional properties Stablein single monolayer form

A truly 2D material(as thin as physically possible)

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A material with

exceptional properties Stablein single monolayer form

A truly 2D material(as thin as physically possible)

Excellent electrical conductor (up to 1000x Si)

Excellent thermal conductor

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A material with

exceptional properties Stablein single monolayer form

A truly 2D material(as thin as physically possible)

Excellent electrical conductor (up to 1000x Si)

Excellent thermal conductor

Transparentand flexible

Exceptionally Strong (300x Steel)

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Graphene in Electronics?Problem:

Graphene

has a zero

energy gap

Transistors

cannot be

switched off

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Rules of the gameIncrease gap and fabricate transistors, butkeep high mobility and reproducibility20

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O i lt E l t f

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Our specialty: Early assessment of

device potential

NanoTCAD VIDES

3D atomistic device simulator

Released as open source as a

python moduleathttp://vides.nanotcad.com

400+ downloads, 60+ papers

A long story started from FP5NanoTCAD Project (1999)nowG. Fiori (UniPi) lead developer]

http://vides.nanotcad.com/http://vides.nanotcad.com/

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This wont work.

This neither.Try instead this

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Lateral heterostructure FET

G. Fiori, G. Iannaccone

International PCT ACS NANO 20122

Lateral G BN Heterostructures

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Lateral G-BN Heterostructures

2

M.P. Levendorf

Nature 2012(Cornell)

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Europes bet on graphene

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ThanksFunding:

FP7 GRADE

FP7 GONEXTS

ESF DEWINT

FP7 GRAND

FP7 NANOSILMIUR GRANFET

Coworkers:

Gianluca Fiori

Massimo Macucci

Bruno Pellegrini

Paolo Marconcini

Demetrio LogotetaQin Zhang

Ravinder Pawar

Alessandro Betti

Samantha BruzzoneMartina Cheli

Paolo Michetti