GaN Power Amplifiers for Next- Generation Wireless ... · GaN Power Amplifiers for Next-Generation...
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GaN Power Amplifiers for Next-Generation Wireless Communications
Jennifer Kitchen Arizona State University
Students: Ruhul Hasin, Mahdi Javid, Soroush Moallemi, Shishir Shukla, Rick Welker
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Wireless Communications Circuits Lab - ASU
- 19 students focused on PA, RF supply modulators, and RF transceiver circuits.- Over 1000 sq ft. laboratory space.
- RF measurement capability up to 40GHz.- PA characterization capability up to ~ 8GHz.
RF Probe Station PA Load-Pull Station
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• Motivations & Objective for this Work• GaN-on-Si – Initial Explorations
- Class AB PA- Switched-Mode Power Amplifiers:
Transformer-Coupled Class D PA with SiGe DriverOther Switched-mode PA Topologies
• GaN-on-SiC – Initial Explorations- High Power MMIC- Cubesat Applications- Doherty w/Dynamic Load Modulation
• Conclusion
Outline
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Motivation for Our Work
Our Motivation:• Higher Efficiency• Lower Cost• Higher Levels of Integration (Smaller Form Factor)• Performance to meet future wireless standards → 5G?
PA + PM ~ 70-80% of Power
RFDigital Base-Band
&Memory
OthersAnalog
Base-Band
Wireless Handset Transceiver’s Power Consumption:
[2005] [2014]
PA > 60% of Power
Power Management DSP
RF/AFE
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Applications to Industry & Technology
Future-generation wireless devices: smartphones, pico/femto cell basestations, Cubesats, transceivers for IoT, beamforming MIMO systems with multiple transceivers, wearable electronics
→ smaller sizes, → lower power consumption, → higher data rates, → lower hardware cost
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Main Objective
To build modulation-agnostic (and multi-band) ‘Linear’ Transmitters for handset and femtocell/picocell basestationapplications.
Requirements:
Maintain PA Efficiency over the entire output power range.
Low Spurious Emissions & Good Signal Quality [ACLR, EVM].
Multi-Band Legacy RF Transmitters
A single PA?
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How?
[2011]
We work with these architectures
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Research Objectives
- To explore GaN-on-SiC/GaN-on-Si as a potential process technology for implementing commercial PAs.
- To innovate and implement wideband, high-efficiency GaNPAs with low cost and hardware overhead.
- To improve the interface between signal processing in silicon and GaN power stages.
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Our 2-Path Approach
Modulation-Agnostic, High-Efficiency Amplifiers in GaN
Efficiency-Enhancement & Linearization of Load-Modulated PAs
‘Digital’ Transmitters EmployingSwitched-mode PAs
RF PowerDACs
Digital RF & SM PAs
AdvancedDoherty
DynamicLoad
Modulation
• Low-loss switches• High-efficiency drivers• Low-jitter, high-speed switching
• Programmable/tunable load• High-efficiency supply modulators• Hardware overhead
Envelope/PowerTracking PAs
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GaN as an Enabler for Revolutionary PA Performance
- Historically, low levels of integration.- Low yield.- Minimal reduction in “knee voltage”.- Requires high supply voltages for highest efficiencies.
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GaN Processes
We design amplifiers in both GaN-on-Silicon and GaN-on-Silicon Carbide (GaN-on-SiC)
Each process has its own advantages/disadvantages:
GaN-on-Si: Lower cost, lower frequencies. Commercial applications.
GaN-on-SiC: Higher cost, higher frequencies, higher power. Basestation, space, and government applications.
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• Motivations & Objective for this Work• GaN-on-Si – Initial Explorations
- Class AB PA- Switched-Mode Power Amplifiers:
Transformer-Coupled Class D PA with SiGe DriverOther Switched-mode PA Topologies
• GaN-on-SiC – Initial Explorations- High Power MMIC- Cubesat Applications- Doherty w/Dynamic Load Modulation
• Conclusion
Outline
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GaN-on-Si Initial Explorations
- Is the process capable of handling power/heat with low-cost assembly solutions?
- What output power/efficiency are the devices capable of providing at low supply voltage?
- Can we accurately predict performance for switched-mode PA applications?
- Can we design high-efficiency switched-mode PAs for advanced communications standards (i.e. LTE, other)?
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What Output Power/Efficiency are the Devices Capable of Providing?
• Build a distributed amplifier: BW = 0.4-4 GHzPsat = 3.5W 23% efficiency
• Build a class AB PA: low [10V] supply, low-thermally conductive die attach, small-form factor
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Measured Class AB PA Performance
Measured output power, gain and power added efficiency (PAE)
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Comparison with Other Class AB PAs
Reference Process Frequency (GHz)
Saturated Output
Power (dBm)
PeakPAE (%)
Linearity
[2] SOI CMOS 0.13 µm
1.9 32.4 47 ACPR of -33 dBc(WCDMA) @ avg. Pout of 28.7 dBm
[3] 65 nm CMOS
0.9 28.9 69.9 --
[4] GaN-on-Si 2.45 34.6 42.5 --[5] GaAs HBT 0.824-0.849 28 36.76 ACPR of -54.61 dBc
(CDMA) @ Pout of 28 dBm
This Work GaN-on-Si200 nm
0.82 – 0.90 30 55.44 Two tone IM3 > -40 dBc @ 6 dB back off
from P1-dB
GaN-on-Si process promises substantial improvements in PAperformance when used in “advanced” architectures.
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• Motivations & Objective for this Work• GaN-on-Si – Initial Explorations
- Class AB PA- Switched-Mode Power Amplifiers:
Transformer-Coupled Class D PA with SiGe DriverOther Switched-mode PA Topologies
• GaN-on-SiC – Initial Explorations- High Power MMIC- Cubesat Applications- Doherty w/Dynamic Load Modulation
• Conclusion
Outline
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Legacy vs. ‘Digital’ Tx Architecture
Presented Work
Ongoing Work
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‘Digital’ Tx Design Challenges
- How do we efficiently amplify digital waveforms?- Process technologies: GaN-on-Si .- High-efficiency switched-mode PA architectures.- Novel coding schemes: RF PWM/PPM, RF M.
- How do we predict transmitter and PA performance?- Transient device models.- Performance verification in a system-level context.
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GaN-on-Si Switching Power Stage
• ParBERT generates 2.25Gb/s switching signals with adequate power for driving 1200m devices.
• High impedance probes for measuring output power at 1.125GHz.
• Power level is adjusted via the RF input signal pulse-width (PWM).
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GaN-on-Si Switching Power Stage
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Coding Efficiency x PA Efficiency
Digital Transmitter Efficiency
transmitter =coding * PA
Coding efficiency directly affects transmitter efficiency.
Vrms2
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Coding Efficiency for Various Digital Processing Schemes
M on FPGA (Systolic Array) Coding Efficiency1.0 Bit 4:1 RZ 18.6%1.5 Bit 4:1 RZ 37.6%
Continuous Time M1 Bit 4:1 NRZ 35.9%
Asynchronous M1.5 Bit 43.8%
Pulse-Width Modulation1 Bit 4:1 RZ 46.8%
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GaN Class-D PA w/SiGe Driver
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SiGe ‘Driver Chip’ Specifications
Specification ValueCapacitive Load Range 1.25pF - 8pFRise/Fall Time at Output <40psOn-Chip Input Termination 50 Output Swing 4.0 V single-endedSupply Voltage 5.0 VPower Consumption 0.5 - 1.6W Temperature Range -40C to 125C
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Power Amplifier Die-to-Die Assembly
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Power Amplifier Board Assembly
DieBalun
Differential Input
Differential Output
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Power Amplifier MeasurementsSingle-Carrier WCDMA: 6dB PAR
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Comparison of This Work to Other Switched-Mode PAs
Reference Freq(GHz)
Class Pout(W)
Gp(dB)
PAE(%)
(%) Device Modulation
1 2.14 E 20 13 70 73 GaN Non‐ConstEnvelope
2 2 F 16.5 13 85.5 91 GaN Const Envelope
3 0.9 CMCD20.7/51.1 ‐ ‐ 75 GaN ConstEnvelope
4 2 E 11.4 12.6 74 ‐ GaN Const Envelope
5 2 E 4 ‐ 57 62 GaN Const Envelope
6 2.14 F 10.5 12.2 70.9 75 GaN Const Envelope
7 2.14 CMCD 50 14.3 60.3 63 GaN Const Envelope
8 0.9 CMCD 870m ‐ 71 ‐ GaAs Const Envelope
9 0.337/1.125 VMCD 1.82 29.5 GaN Non‐Const
Envelope
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• Motivations & Objective for this Work• GaN-on-Si – Initial Explorations
- Class AB PA- Switched-Mode Power Amplifiers:
Transformer-Coupled Class D PA with SiGe DriverOther Switched-mode PA Topologies
• GaN-on-SiC – Initial Explorations- High Power MMIC- Cubesat Applications- Doherty w/Dynamic Load Modulation
• Conclusion
Outline
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GaN-on-SiC Initial Explorations
- What are the frequency and power limitations for GaN as a MMIC?
- How do we integrate multiple MMICs at a module-level and manage thermal requirements?
- How do we design for high-reliability and long-term field deployment?
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High-Power MMIC
- 40 Watt single-MMIC Output Stage: 4-6GHz (currently in fab).
- Thermal analysis shows good heat dissipation. Junctions remain within ‘safe’ operating temperatures.
- The ability to simulate, analyze, and measure PA temperature ‘hot spots’ is instrumental to increasing efficiency and power.
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+30GHz PA for Cubesat Application
Build revolutionary power amplifiers for +30GHz aerospaceand satellite applications.
Requirements:
Robust, Radiation Tolerant,Wide Temperature Range
+30GHz operation with >30W output power (Psat)
>50% PA Efficiency
Small form factor –integrated package solutions
Specification Value
Frequency Range 35.5-36.5GHz
Saturated Output Power (0.5dB Compression)
32 W
PA MMIC PAE ~25 %
Gain ~25 dB
Linearity
IM3@35dBm/tone:-31dBc
IM5@35dBm/tone:-37dBc
TID Hardness [krad] 3,000
Temperature Range -55C to +125C
Fabrication PA MMIC/ Integrated Module
PA MMIC Process Qorvo GaN0.15um
Power Supply 22 V
Ka-Band CubeSat PA
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High Power Density PA MMIC & Module
Single PA MMIC
Integrated Module• High Power Density• Small Size• Advanced GaN
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Dynamic Load Modulation (DLM) Doherty Design
No additional λ/4 transformer required
- CREE GaN-on-SiC devices.- Doherty Architecture w/DLM in the Main PA.- High efficiency at high power backoff.- Smaller form factor by removing the /4 at output.
DLM
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Simulated Performance Summary
11 dB back-off
Gain (dB) vs Output Power (dBm) and Drain Efficiency vs Output Power (dBm) at 1.9 GHz
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Simulated Performance Summary
State of the art performance, highest reported efficiency at 10dB power backoff, and wide bandwidth of operation
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• Motivations & Objective for this Work• GaN-on-Si – Initial Explorations
- Class AB PA- Switched-Mode Power Amplifiers:
Transformer-Coupled Class D PA with SiGe DriverOther Switched-mode PA Topologies
• GaN-on-SiC – Initial Explorations- High Power MMIC- Cubesat Applications- Doherty w/Dynamic Load Modulation
• Conclusion
Outline
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Summary
• We have explored GaN-on-Si and GaN-on-SiC for various applications:– Commercial cellular– Next generation ‘digital’ architectures– Cubesat applications
• GaN-based amplifiers show promise for:– Medium power commercial applications.– High frequency Cubesat, Satcom, or government applications.
• Is the cost worth the performance?