Failure Analysis (FA) Introduction (Failure Analysis Concept) · PDF fileFailure Analysis...

Failure AnalysisFailure AnalysisFailure Analysis

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Failure Analysis (FA) IntroductionFailure Analysis (FA) Introduction

((Failure Analysis Concept)Failure Analysis Concept)


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Failure Analysis (FA)Failure Analysis (FA)

FA Definition:To identify the failure mechanism of failed product.

FA Concept:Not only to confirm the failure, but trace the root causes.

FA Attitude:1) Why/What/Who/When/How it failed.2) What should we do now.3) How do we improve better.

FA Value:1) Identification of material-related defects.2) Solving manufacturing problems.3) Solving service-related problem.4) Providing corrective or prevention measures.5) Providing manufacturers’ insurance or legal defense/claim cases6) To improve product design, production yield and reliability

真相大白仍須鐵證如山

水落石出也要明察秋毫

時時留意處處小心

- Failure mode- Failure mechanism- Root cause


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Failure Analysis ElementsFailure Analysis Elements

• Current Status (Failure rate)• Failure Mode (EFA)• Failure Mechanism (Possible)• Failure Analysis Technology (Tools)• FA Procedure (Flowchart)• Result Consistence (Date Speak)• Time Pressure (Resource Limit)


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-Large ElasticDeformation

-Yield-Buckling-Brittle Fracture-Ductile Fracture-InterfacialDe-adhesion

-ElectromagneticInterferenceDamage

-ElectricalOverstress

-Gate OxideBreakdownDischarge

-SecondBreakdown

-IonicContamination

-Single EventUpset

-Soft Error

-Fatigue CrackInitiation

-Fatigue CrackPropagation

-Creep-Wear

-Gate OxideBreakdown

Time DependentDielectricBreakdown

-Slow Trapping-Surface chargeSpreading

-Hot electrons-HillockFormation

-Contact Spiking-Electromigration

-Diffusion-Interdiffusion-Corrosion-Stress Corrosion-Dendritic Growth-Soft Error-Excessive LeakageCurrents

-Radiation InducedThermal Breakdown

Wear-outOverstress

Thermo-mechanical

Electrical Chemicaland Radiation

Thermo-mechanical

Electrical Chemicaland Radiation

IC Failure Mechanism/PropertyIC Failure Mechanism/Property


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��DCDC ---- Open/Short: Pin Continuity/ESD TestOpen/Short: Pin Continuity/ESD Test

---- Leakage: Input Buffer High/Low Current TestLeakage: Input Buffer High/Low Current Test

---- ICC: Standby/Dynamic/Refresh Current TestICC: Standby/Dynamic/Refresh Current Test

��AC AC ---- High/Low Voltage AppliedHigh/Low Voltage Applied

---- Data High/Low (1/0) AppliedData High/Low (1/0) Applied

---- Pattern (Scan/Checkerboard/March) AppliedPattern (Scan/Checkerboard/March) Applied

---- Timing (Speed) TestTiming (Speed) Test

Electrical AnalysisElectrical Analysis

DC (Direct Current): Assembly related EFA AC (Alternative Current): Device related EFA


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Parameter DefectParameter Defect

V53C162581 Vcc Vss 442 I/O 1 I/O 16 433 I/O 2 I/O 15 424 I/O 3 I/O 14 415 I/O 4 I/O 13 406 Vcc Vss 397 I/O 5 I/O 12 388 I/O 6 I/O 11 379 I/O 7 I/O 10 3610 I/O 8 I/O 9 35

13 NC NC 3214 NC LCAS 3115 WE UCAS 3016 RAS OE 2917 NC A8 2818 Ao A7 2719 A1 A6 2620 A2 A5 2521 A3 A4 2422 Vcc Vss 23

Pin Names (V53C16258)A0-A8 Address InputsRAS Row Address StrobeUCAS Column Address Strobe

/Upper Byte ControlLCAS Column Address Strobe

/Lower Byte ControlWE Write EnableOE Output EnableI/O1~I/O 16 Date Input, OutputVcc +5V SupplyVss 0V SupplyNC No Connect

Vcc Vss

IO1

IO2

IO3

IO4

IO16

IO15

IO14

IO13

Chip

Lead-frame

Gold-wire

bond-padCompound

Lead

- Open (開路) - Short (短路)- Leakage (漏電)- Idd (靜態電流)

Vcc

Vss

VLSI Circuit

Physical Package Diagram


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Force current I (0.1mA) to measure voltage V0.2V 2V

Pass OpenShort

V

I (mA)

0.7

0.1

V

I (mA)

0.7

0.1

V

I (mA)

0.7

0.1

Judgement

Input

Vdd

Vss

Output

I

Circuit Diagram (ESD Protection)

1 402 393 384 375 366 357 348 339 3210 3111 3012 2913 2814 2715 2616 2517 2418 2319 2220 21

1 402 393 384 375 366 357 348 339 3210 3111 3012 2913 2814 2715 2616 2517 2418 2319 2220 21

Vss=0V

- Sink 0.1 mA- Measure V- All pins

E

Pin connection

C

E

C

+ -

Open/ShortOpen/Short

EDS


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LeakageLeakage

0 - 5/3.3V

Vdd=5/3.3V

Vss=0V

Output

Leakage Hi

Leakage Lo

10uA (depend on spec.)

Pass Leakage

1 402 393 384 375 366 357 348 339 3210 3111 3012 2913 2814 2715 2616 2517 2418 2319 2220 21

1 402 393 384 375 366 357 348 339 3210 3111 3012 2913 2814 2715 2616 2517 2418 2319 2220 21

Vdd=5V/3.3V Vss=0V

- Force 0V and 5V (3.3V)- Measure I- All pins

C

AUX E

AUX

C

E

Pin connection

Circuit Diagram

Judgement

Force voltage V (Lo=0V, Hi=5V) to measure current I

EDS


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Idd CurrentIdd Current

1 402 393 384 375 366 357 348 339 3210 3111 3012 2913 2814 2715 2616 2517 2418 2319 2220 21

1 402 393 384 375 366 357 348 339 3210 3111 3012 2913 2814 2715 2616 2517 2418 2319 2220 21

Vdd=5V/3.3Vmeasure Idd Vss=0V

Input

Vdd=5/3.3V

Vss=0V

Output

Idd

C E

E

CPin connection

Circuit Diagram

Pass Idd fail

Judgement

Force voltage V (5V) to measure current I

- Force Vdd=5V(3.3V) - Measure I- Vdd and Vss

EDS


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I-V CurveI-V Curve

Curve TracerCurve Tracer

Feature- Pin to pin test- O/S test- Leakage test- Idd test

Feature- Pin to pin test- O/S test- Leakage test- Idd test

Tektronix 370A curve tracer spec.Range Resolution

V -500V ~ +500V 5mVI -2A ~ +2A 100pA

AUX -40V ~ +40V 20mA

DC TesterDC Tester

Feature- Socket test- O/S test- Leakage test- Idd test

Feature- Socket test- O/S test- Leakage test- Idd test

ChipMOS DC tester spec.Range Resolution

V -110V ~ +110V 100µVI -1A ~ +1A 100fA

Test socketTSOP II 54L

Normal Open Short Leakage



X-光顯微儀(XRM, X-Ray Microscopy)

超音波掃描儀(SAT, Scanning Acoustic Tomograph)

檢測產品內部金線連接, 金線傾斜及銀膠氣洞等(wire connection, wire sweep, epoxy void)

檢測產品內部脫層, 氣洞, 晶片傾斜等(delamination, void, chip tilt)

Brand: SONIXModel: HS-1000

Brand: FEINFOCUSModel: FXS-100.23

Non-Destructive Test, NDTNon-Destructive Test, NDT



Destructive TestDestructive Test

膠體開蓋機(Decapsulator)

金相試片製作(DPA, Destructive Physical Analysis)

去除產品封膠材料以便觀察金線及晶片等(Move away EMC to observe wire and chip)

Brand: NIPPON / Model: PS101

(Lead frame)

(Epoxy)

(Die pad)

Chip

產品內部結構及尺寸分析, 缺陷檢測(Internal structure and dimension)



DPA Preparation, Cross-SectionDPA Preparation, Cross-Section

切割切割切割切割(Cutting)

切割切割切割切割(Cutting)

鑲埋鑲埋鑲埋鑲埋(Monting)

鑲埋鑲埋鑲埋鑲埋(Monting)

研磨研磨研磨研磨(Grinding)

研磨研磨研磨研磨(Grinding)

拋光拋光拋光拋光(Polishing)

拋光拋光拋光拋光(Polishing)

Brand: ALLIEDModel: METPREP 8

LiquidPowder

Brand: EXTEC Model: 14560 (p)

14565 (l)

Brand: BUEHLERModel: ECOMET 3

Brand: BUEHLERModel: ISOMET



OM Appearance: Package crack

XRM: Cannot find abnormality

P45

P46

P47

P48

P49P50P51P52

P48

P49

SEM: Find 2nd stitch bond crack

compound

Crack-line

Au-wire

Ag-plating

Cu-leadframe

Failure mode: 2nd bond crack/broken



光學顯微鏡(Optical Microscopy)

掃描式電子顯微鏡(SEM, Scanning Electron Microscopy)

MeasurescopyBrand: NIKONModel: MM-60/L3U

StereoscopyBrand: NIKONModel: SMZ-10A

H.M. Optical MicroscopyBrand: NIKONModel: OPTZPHOT-200

Brand: HITACHIModel: S-3500N

Auxiliary Tools (Microscope)Auxiliary Tools (Microscope)



Device Related FA InstrumentsDevice Related FA Instruments

光子顯微鏡(EM, Emission Microscopy)

液晶顯微鏡(LCM, Liquid Crystal Microscopy)

聚焦離子束儀(FIB, Focus Ion Beam)

記憶體分析儀(MOSAID Memory Analyzer)

(Chemical Analysis, FTIR, Auger, EDX, AA…)



XRM Image

SAT Picture

SEM Photo

Hot Spot(Defect)

LCM Photo

Sample

Open/Short Test

Leakage (Hi/Lo)

Idd Current Test

DC Tester

Open/Short only

Decapsulation

SEMSEM

LCMLCM

Curve Tracer(Tektronix 370A)

Liquid CrystalMicroscope

(Wentworth MP-2300)

Report

X-Ray Microscope(Feinfocus FXS 100.23)

- Sample - Pin Assignment- Socket

XRMXRM

SATSAT(Cause)

Scanning ElectronMicroscope

(HITACHI S-3500N)

Scanning AcousticTomograph

(SONIX HS-1000)

Failure Analysis ProcedureProcedure

PASS

(Pin to Pin)(Socket, all pins)

Leakage only(Hot-spot)

(Cause)

Chip ProbingChip Probing

(Cause)

Open/Short only



Reference

www.semiconfareast.com Crime Scene Investigation

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