Enhancing Life One Photon at a Time - NDIPndip.in2p3.fr/ndip14/AGENDA/AGENDA-by-DAY/... · High...
Transcript of Enhancing Life One Photon at a Time - NDIPndip.in2p3.fr/ndip14/AGENDA/AGENDA-by-DAY/... · High...
Enhancing Life One Photon at a Time
_________Applications_________
High Energy Physics Nuclear Medicine Medical Imaging
Life Science Biotech Instrumentation
Homeland Security Flow Cytometry
Biological Sensors Analytical Instruments
Confocal & SEM microscopy
___________Features__________
Sensitive to visible light Detection of extremely faint light
Low operating voltage Very high gain (106)
Extremely good timing performance Insensitive to magnetic fields Not damaged by ambient light
Small and compact Available in package or die form
Room temperature operation
Low light level silicon radiation detector with single photon sensitivity
and photo counting capability
Valid and innovative solid state alternative to conventional photomultiplier tubes (PMT detectors)
Direct NUV/VIS light detection g, X, b detection with crystals
SiPM – The Silicon PhotoMultiplier
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NDIP 2014 - Tours, France
SiPM Markets and Applications
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AdvanSiD SiPM technology roadmap
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4th generation 2015 +
3rd generation 2014
2nd generation 2012
1st generation 2010
Original n-on-p SiPM technology
RGB & NUV SiPM technology
•RGB-SiPMs Red-green-blue light detection
•NUV-SiPMs Near-Ultra-Violet Light detection
•Low noise •High VBD uniformity
•High temperature stability
New 40um micro-cell RGB & NUV SiPMs
•RGB DCR<400 kHz/mm2
•NUV DCR<200 kHz/mm2
•60% fill-factor •High PDE •High dynamic range
New RGB-HD & NUV-HD SiPMs
•100 kHz/mm2 DCR •10 to 30 um cells •60% PDE •Reduced crosstalk
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AdvanSiD SiPM technology
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NUV-SiPM p-on-n structure Near-ultra-Violet light detection Peak PDE at 420 nm DCR < 200 kHz/mm2
RGB-SiPM n-on-p structure Red-Green-Blue light detection Peak PDE at 550 nm DCR < 400 kHz/mm2
Unified cell-size: 40 um, 60 % fill-factor Best trade-off in terms of PDE, Gain, Noise
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Active Area size CSP TO18 TO8 Glob-Top
1x1 mm2 R R R
1.2 mm circular R R R
3x3 mm2 R R
4x4 mm2 R R
Single-channel SiPMs
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1x1 mm2 square
active area
1.2 mm circular
active area
New CSP SiPM Packages
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• New SLIM 3x3 and 4x4 mm2 CSP SiPMs
– “Edgeless” 3x3 and 4x4 mm2 SiPM dies
– SLIM CSP package with reduced borders
4x4 mm2 ACTIVE AREA
4.48 mm 3.48 mm
3.93 mm
4.93 mm
200 um border
3x3 mm2 ACTIVE AREA
SiPM Arrays
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Channels / Pixel size Monolithic Hybrid
Hybrid High Fill-Factor
64 channels / 1.5 mm pixels R
16 channels / 3 mm pixels R R
16 channels / 4 mm pixels R R
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64 channels – 1.5 mm SiPM pitch 50 um gap between pixels
16 channels – 4x4 mm2 SiPMs Independent anodes & cathodes
16 channels – 87.5 % Fill-Factor 4x4 mm2 SiPMs, 4.2 mm pitch
16 channels – 87.5 % Fill-Factor 4x4 mm2 SiPMs, 4.2 mm pitch
Hybrid High Fill-Factor Array
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• Hybrid array = silicon dies (not CSP) on common package
• 16 elements, 4x4 mm2 SiPMs, 4.2 mm pitch: 87.5 % Fill-Factor
• 16 elements, 3x3 mm2 SiPMs, 3.2 mm pitch: 85 % Fill-Factor – 200 um gap between active areas, 120 um gap between silicon dies
– Regular pitch (x & y direction), 3 sides buttable
– Die-to-die (bridge) bonding: common front bias, independent backside readout
200um
200um
SiPM die
SiPM die
SiPM die
SiPM die
Hybrid Array customization
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• SiPM die customization
– SiPM size from 2x2 mm2 to 1x1 cm2
– Die shape square, rectangular
– Active area shape square, circular
• Package customization
– Number of SiPMs # of rows, # of columns
– SiPM pitch
– Connection scheme single die bonding, die-to-die (bridge) bonding, output connectors
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SiPMs uniformity
• RGB and NUV SiPMs with 40um micro-cell
• Production on 6-inch wafers
• Data from on-wafer measurements at 24 °C
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1. Breakdown voltage (VBD) (24 °C)
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0
100
200
300
400
500
600
700
800
24,5 24,6 24,7 24,8 24,9 25 25,1
Co
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Breakdown voltage (V)
NUV-SiPMs
0
100
200
300
400
500
600
700
28,4 28,5 28,6 28,7 28,8 28,9 29 29,1 29,2 29,3 29,4 C
ou
nt
Breakdown voltage (V)
RGB-SiPMs
0.2 V breakdown uniformity: 92% SiPMs
0.1 V breakdown uniformity: 81% SiPMs
0.2 V breakdown uniformity: 100% SiPMs
0.1 V breakdown uniformity: 85% SiPMs VBD uniformity Gain Uniformity Upon request: Selection of SiPMs based on VBD
Sample wafer #1 Sample wafer #2
Sample wafer #1 Sample wafer #2 Sample wafer #3
2. Dark Current (40um micro-cell, 24 °C)
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High dark current uniformity: 96.7% SiPMs within a factor of 2 (1.8e-10 – 9.9e-10 A/microcell)
DCR < 200 kHz/mm2 (at 20° C and 3V overvoltage)
0
20
40
60
80
100
1201
,2E-
10
1,5
E-1
0
1,8
E-1
0
2,1
E-1
0
2,4
E-1
0
2,7
E-1
0
3E-
10
3,3
E-1
0
3,6
E-1
0
3,9
E-1
0
4,2
E-1
0
4,5
E-1
0
4,8
E-1
0
Co
un
t
Dark Current per micro-cell (A)
NUV-SiPMs @3 V ov.
0
50
100
150
200
250
300
Co
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t Dark Current per micro-cell (A)
RGB-SiPMs @4 V ov.
Sample wafer #1 Sample wafer #2 Sample wafer #3
High dark current uniformity: 100% SiPMs within a factor of 2 (4e-10 -- 8e-10 A/microcell)
DCR < 400 kHz/mm2 (at 20° C and 4V overvoltage)
Sample wafer #1 Sample wafer #2
3. Quenching resistance (Rq) (24 °C)
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0
20
40
60
80
100
120
Co
un
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Quenching resitance (ohm)
NUV-SiPMs Sample wafer #1 Sample wafer #2
0
50
100
150
200
250
300
350
400
450
Co
un
t Quenching resitance (ohm)
RGB-SiPMs
Sample wafer #1 Sample wafer #2 Sample wafer #3
High Rq uniformity on wafers 97% SiPM within ±10% from mean value
Rq uniformity SiPM signal amplitude uniformity
AdvanSiD Evaluation Boards
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Product code SiPM Evaluation Board
ASD-EP-EB-N ASD-EP-EB-PZ
Description SiPM signal amplifier SiPM signal amplifier
Pole-Zero compensation network
SiPM Application Dark characterization
Faint light measurements
Timing and Energy measurements with
scintillators, LEDs, Laser, optic fibers
Low Gain Output OUT 1 OUT 1
High Gain Output OUT 2 -
Pole-Zero Output - OUT2
Output Impedance 50 W 50 W
Output Polarity OUT 1: Negative
OUT 2: Negative
OUT 1: Positive
OUT 2: Negative
Output Voltage
Swing ±3.9 V (typ.) ±3.9 V (typ.)
Power Supply
Operating Range
4.5 V (Min)
12 V (Max)
4.5 V (Min)
12 V (Max)
Schematic
Pole-Zero compensation
• The compensation of the SiPM signal tail leads to an effective suppression of the baseline fluctuations due to dark counts. This is particularly important for time pick-off of signals from SiPMs coupled to scintillators (e.g., timing measurements for PET applications). In fact, standard Leading-Edge Discriminator (LED) technique is rather sensitive to the local variation of the baseline.
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A dark pulse occurring right before a gamma pulse rises the baseline and introduces a non-negligible time jitter due to the finite slope of the SiPM signal itself; By eliminating the tail of the SiPM pulses (hence the tail of the dark events) the baseline readily restores to zero, avoiding fluctuations, and allowing lower threshold levels for LED time pick-off.
PZ Evaluation Board: TOF-PET setup
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Setup picture
SiPM + LYSO wrapped in teflon
ASD-EP-EB-PZ SiPMs pre-amplifier with Pole-Zero compensation
22Na source
Energy and Timing measurements with PZ Evaluation Board
Out1: Preserve signal shape (energy channel)
Out2 (PZ compensated): Only rising edge (timing channel)
Latest news from AdvanSiD
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• TRIMAGE EU project – Optimised TRI-modality (PET/MR/EEG)
imaging tool for schizophrenia based on SiPMs (see also poster 75 – Weeroc)
• MEG upgrade (PSI institute)
– Timing Counter based on AdvanSiD NUV-SiPMS
Company assets
• Internal SiPM production for customized SiPMs – 6 inch Silicon production
• Volume production at external foundry – Standard, high volume production
– 8 inch fabrication line, short lead-time
• Internal packaging and assembly line
• Internal testing, characterization, yield & reliability procedures
• Worldwide presence in key areas – Europe, USA, Canada, Brazil, Israel, Asia
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SiPMs R&D at FBK High-Density SiPMs development Small cell size, «Low» gain (105 < gain < 106)
low after-pulse
low direct and delayed XT
low external XT
2nd generation trench technology
High dynamic range (5’000 – 10’000 cells/mm2)
Fast signals (low capacitance)
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RGB-HD - 15 um micro-cell Measured by Y. Musienko @CERN
Thank You
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