Efficiency Simulator2003 2.0

8/22/2019 Efficiency Simulator2003 2.0

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Buck Converte

Macro included excel toolThis simulation tool includes macro ro rammin . A securit warnin a

Simulation CircuitThis simulator models a basic synchronous Buck converter. The structure


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Efficiency simulation results

Circuit parameters can be entered into the two spreadsheets titled Circregions, as indicated in the diagram below. Area 1 contains the topology

contains parameters specific to the driver device. Note that in this circuitthe circuits output inductor and capacitor. Finally, Areas 4 and 5 containand low side MOSFETs are preloaded to the spreadsheet "MOSFETs". UsMOSFETs in spreadsheet "Circuit1" or "Circuit2". MOSFETs that are not de

The simulator will automatically run each time a user-definable paltered. No additional buttons need to be pressed in order to star

Any cell that is open to user input is marked with a yellow background.such, the white cells may not be directly edited by the user.

The user may view the efficiency results for Circuits 1 and 2 by clickinsimulation curve is a title that shows which MOSFETs, drivers, input voltaDont Show Circuit 1 control whether the efficiency curve for Circuit 1displayed.

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4


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PowerLossComponents

a a ase an r ver a a ase

By clicking the tab titled Power Loss Components, the user may viewcircuits power loss, including conduction loss at the high-side MOSFET,loss, deadtime power loss, driver loss for the high-side MOSFET, driver lpull-down menus above the chart, the user may select which circuit is sho

In this simulator, the parameter values for both the high-side and the locatogrized in a seperate spreadsheet with title "Duals". Within the Msimulator. Users who wish to define a new MOSFET device must enter bdiode forward voltage VSD, transconductance gm, internal Rgin, thermalAfter the name and parameters of a user-defined MOSFET have been enteither Circuit1 or Circuit2. Devices that have not been defined within

Similarly, a collection of driver devices has been pre-loaded into the spreaby entering the device name and parameters. For the driver database, th


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Single MO

, , ,


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r Efficienc Simulation Tool Tutoria

ars ever time ou o en this tool. Click "Enable Mac

of the Buck converter circuit is shown below.


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it 1 and Circuit 2. In each of these spreadsheets,parameters of the synchronous Buck converter, incl

both the high-side and low-side MOSFETs share thethe parameters of the high-side and low-side MOSFrs have the flexibiligy to define new MOSFETs in spined in spreadsheet "MOSFETs" can not be simulate

rameter (denoted by a yellow background) ist the simulation

ells with white backgrounds contain the simulators

the tab titled Efficiency. An example of an efficies, output voltages, and switching frequencies wereis displayed on the graph. Similar buttons exist to

3

5


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a chart explaining the losses of power within thewitching loss at the high-side MOSFET, conduction lss for the low-side MOSFET, winding loss, PCB loss,wn in the chart, as well as the output current at whic

-side single MOSFETs have been pre-loaded into thSFETs and "Duals" spreadsheet, users have the aoth the device name and the device parameters, inresistance, RDSon temperature coefficient, RDSon (Vered into the spreadsheet, this new device becomeshis spreadsheet will not appear within the pull-down

dsheet titled Drivers. Users may select from the puser-defined parameters include maximum driver v

Controloutput


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FET database snapshot


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NTD4804Nx1+NTMFS4897NFx1@300kHz; Buck Circuit Parameters: Driver Parameters:

Input Voltage 12 V Driv

Output Voltage 1.2 V Driver Voltage Vdr V

Switching Frequency 300 kHz Sourcing Resistance @ HS

Duty Cycle 0.10 Sinking Resistance @ HS

Period Ts (s) 3.333 us Rise Delay Time tpdHDR

Current Ripple Peak-to-Avg 1.80 A Fall Delay Time tpdLDR

Voltage Ripple 26.05 mV Quiescent Current

Maximum Output Current 30 A Maxim Driver Voltage MAX-V

Current Ripple Ratio 6.00 %

Voltage Ripple Ratio 2.17 %

g - e :

Enable auto zoom in and out? No MOSFET Selected

Drain-to-Source On Resistance RDS(

Total Gate Charge QG(TO

Output Capacitance C

Buck converter circuit Gate-to-Drain Charge QGate-to-Source Charge Q

Gate Threshold Voltage VGS(T

Forward Transconductance g

Gate Resistance

Junction-to-Ambient Thermal Resistance

RDS(on) Temperature Coefficient

External Gate Resistance Rg

Number of HS MOSFET

Note:

1. Only single phase is simulated.2. Simulaton is performed at 25 C and self heating of MOSFET is not taken into account.

B1)

R


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5V)

R_Coutput 5 m

tual Value 88.00 uF

Core loss 30 mW

esistance 1.5 m

tual Value 1.00 uH

R-PCB 1 m

NTMFS4897NFRDS(on) 2.0 m

QG(TOT) 40 nC

Coss 1150 pF

QRR 34 nC

VSD 0.35 V

45.7 C/W

0.52 %/C

Rgex 0.0

1

RJA

tions, please contactChenonsemi.com


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NTD4804Nx1+NTMFS4897NFx1@300kHBuck Circuit Parameters: Driver Parameters:

Input Voltage 25 V

Output Voltage 1.2 V Driver Voltage VdrSwitching Frequency 300 kHz Sourcing Resistance @ HS

Duty Cycle 0.05 Sinking Resistance @ HS

Period Ts (s) 3.333 us Rise Delay Time t

Current Ripple Peak-to-Avg 1.90 A Fall Delay Time t

Voltage Ripple 18.03 mV Quiescent Current

Maximum Output Current 30 A Maxim Driver Voltage

Current Ripple Ratio 6.35 %

Voltage Ripple Ratio 1.50 %

g - e :

Enable auto zoom in and out? No MOSFET Selected

Drain-to-Source On Resistance

Total Gate Charge

Output Capacitance

uc conver er c rcu Gate-to-Drain ChargeGate-to-Source Charge

Gate Threshold Voltage

Forward Transconductance

Gate Resistance

Junction-to-Ambient Thermal Resistance

RDS(on) Temperature Coefficient

External Gate Resistance

Number of HS MOSFET

Note:1. Only single phase is simulated.

2. Simulaton is performed at 25 C and self heating of MOSFET is not taken into account.

B1)


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0 3 6 9 12 15 18 21 24 27 30

60%

65%

70%

75%

80%

85%

90%

95%

Circuit1Efficiency

Load Current (A)

Efficiency

NTD4804Nx1+NTMFS4897NFx1@300kHz;

Vin=25V;Vout=1.2V;Driver=NCP5359A(5V)

NTD4804Nx1+NTMFS4897NFx1@300kHz;

Vin=12V;Vout=1.2V;Driver=NCP5359A(5V)


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407mW; 6.2%

2,311mW; 35.3%

1,484mW; 22.7%

255mW; 3.9%

108mW; 1.7%63mW; 1.0%

79mW; 1.2%

1,095mW; 16.7%

730mW; 11.2%6mW; 0.1%

Power Loss Components for Circuit @

Unit: mW

2 2.58E+00


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MOSFET Coss(Q1) (pF) Qgd (nC)

NTD4804N 4.6 952 13.0

NTD4805N 5.8 610 8.3

NTD4806N 7.5 480 7.0

NTD4808N 9.8 334 4.9

NTD4809N 11.0 315 5.0

NTD4809NH 10.0 331 5.1

NTD4810N 11.0 284 4.4

NTD4813NH 18.5 201 3.0

NTD4815N 18.3 181 3.1

NTD4855N 4.6 740 8.6NTD4856N 5.3 567 6.6

NTD4857N 6.3 495 6.6

NTD4858N 7.3 405 5.2

NTD4860N 8.9 342 4.7

NTD4863N 12.8 253 4.1

NTD4865N 13.9 223 3.3

NTD4904N 4.0 976 3.0

NTD4906N 6.5 642 18.0

NTD4909N 9.5 487 1.3

NTD4910N 10.6 460 1.1NTD4913N 12.5 370 0.9

NTD4960N 10.0 342 4.7

NTD4963N 13.6 220 3.5

NTD4965N 5.3 664 8.5

NTD4969N 13.2 347 4.8

NTD4970N 13.2 306 4.0

NTMFS4821N 8.4 282 3.8

NTMFS4823N 15.1 163 2.5

NTMFS4825NFE 2.0 1150 13.4

NTMFS4826NE 6.5 333 4.5NTMFS4833N 2.3 1200 17.0

NTMFS4834N 3.4 960 11.0

NTMFS4835N 3.9 670 8.8

NTMFS4836N 4.8 565 8.0

NTMFS4837NH 6.4 450 6.6

NTMFS4839NH 7.8 355 5.4

NTMFS4841N 8.5 348 5.1

RDSon(Vg=4.5V) (m)


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NTMFS4841NH 8.5 325 4.5

NTMFS4845N 3.4 650 8.6

NTMFS4846N 3.8 562 7.4

NTMFS4847N 5.0 466 6.1

NTMFS4851N 6.5 333 4.5

NTMFS4852N 2.4 970 11.3

NTMFS4897NF 2.0 1150 13.4NTMFS4898NF 3.4 700 9.0

NTMFS4899NF 5.8 360 4.6

NTMFS4921N 8.4 282 3.8

NTMFS4923NE 3.7 1264 3.0

NTMFS4925N 6.4 483 4.2

NTMFS4926N 7.5 390 3.5

NTMFS4927N 8.5 366 3.1

NTMFS4933N 1.5 3230 10.1

NTMFS4934N 2.2 2355 8.1

NTMFS4935N 3.7 1265 3.0

NTMFS4936N 3.9 1014 2.4

NTMFS4937N 5.0 840 2.2

NTMFS4939N 6.0 642 2.5

NTMFS4941N 7.1 570 1.6

NTMFS4943N 8.2 446 1.9

NTMS4800N 20.0 225 3.2

NTMS4801N 9.5 288 4.1

NTMS4802N 4.3 880 13.0

NTMS4807N 6.5 562 10.4NTMS4816N 12.7 220 3.8

NTMS4873NF 12.0 345 3.9

NTMS4916N 9.0 401 6.5

NTMS4917N 11.3 325 7.0

NTMS4920N 4.6 1170 3.8

NTMS4935N 5.3 971 3.8

NTMS4937N 7.1 715 3.3

NTMS4939N 9.0 620 1.9

NTTFS4821N 8.6 300 4.5

NTTFS4823N 13.0 175 2.9NTTFS4824N 5.7 350 4.8

NTTFS4928N 8.5 366 3.1

NTTFS4929N 12.7 337 4.4

NTTFS4930N 22.7 175 2.3

NTTFS4932N 3.6 2 3.3

NTTFS4937N 4.8 893 1.9

NTTFS4939N 5.9 711 1.8


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NTTFS4941N 7.0 573 1.3

NVMFS4841N 9.2 348 5.1

NVTFS4823N 13.5 175 2.4

NTMFS4983NF 2.5 1340 6.9

NTTFS4985NF 4.13 876 4.1

NTMFS4985NF 4 900 4.2


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Qgs (nC) Vth (V) Internal Rgin ()

13.0 2 0.8 23 0.6

8.3 2 0.8 17 0.8

7.0 2 0.8 14 1

4.9 2 0.8 11.4 1.1

4.8 2 0.8 9 2.4

5.3 2.1 0.8 9 0.75

3.3 2 0.8 9 2.4

3.4 2 0.8 6.7 0.55

2.5 2 0.8 6 2.6

7.9 2 0.8 80 0.86.7 2 0.8 73 0.6

5.7 2 0.8 77 0.6

4.7 2 0.8 55 0.7

3.9 2 0.8 48 0.75

3.4 2 0.9 45 0.5

3.0 2 0.85 39 0.75

8.2 1.6 0.8 76 1

5.9 1.6 0.85 52 1

4.3 1.7 0.8 52 1

3.9 1.6 0.8 40 13.7 1.67 0.9 39 1

4.0 2 0.8 48 1

3.5 2 0.85 40 1

5.1 1.8 0.8 52 1

2.8 1.8 0.85 36 1

3.0 1.9 0.9 34 0.8

4.1 1.8 0.85 54 1.1

2.6 1.9 0.85 26 1

15.3 2 0.35 90 0.7

5.1 1.8 0.8 62 0.916.0 2 0.7 30 1

12.0 2 0.75 35.2 1.4

8.3 1.9 0.75 21 1

8.0 2 0.8 24 1.2

6.4 2.1 0.8 67 0.9

5.2 2.1 0.8 60 0.9

5.0 2 0.825 16 3.2

SD DiodeForward Voltage

(V)

Transconductance

gm (S)


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5.3 2.1 0.825 57 0.9

9.4 1.8 0.75 87 1.3

8.1 1.8 0.75 85 1.4

7.3 1.8 0.75 74 0.9

5.1 1.8 0.8 65 0.9

13.0 1.8 0.8 47 1

15.3 2 0.35 90 0.710.0 2 0.7 77 1.4

4.6 2 0.75 57 1.5

4.1 1.8 0.85 54 1.1

10.2 1.63 0.8 32 1.1

3.8 1.7 0.86 52 0.8

3.0 1.6 0.87 40 1

3.1 1.6 0.87 40 0.9

21.0 1.6 0.75 82 1.1

13.9 1.6 0.75 80 0.8

10.2 1.63 0.8 32 1.1

9.2 1.6 0.8 50 1.1

7.6 1.63 0.85 37 1.1

6.0 1.6 0.8 34 1.1

5.7 1.67 0.85 32 1.1

4.4 1.66 0.85 32 1.1

3.2 2.25 0.75 21 1.5

5.4 2 0.75 26 1.1

14.0 2 0.7 55 1

7.7 2.25 0.75 16 0.94.4 2.25 0.75 26 1.5

3.7 1.8 0.5 22 1.5

4.0 1.7 0.75 23 0.77

4.2 1.7 0.75 19 0.7

10.4 2.25 0.7 30.8 0.4

9.7 1.75 0.75 28 0.5

6.6 1.75 0.75 27.3 0.4

5.3 1.75 0.75 23.8 0.4

3.9 1.9 0.8 53 0.6

2.5 1.9 0.9 34 0.654.7 1.9 0.85 53 0.9

3.1 1.6 0.85 40 0.9

2.8 1.6 0.9 26 0.6

1.5 1.6 0.8 13 0.6

8.9 1.6 0.8 46 1.1

7.6 1.6 0.85 37 1.1

6.0 1.7 0.85 35 1.1


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4.9 1.7 0.85 33 1.1

5.0 2 0.85 16 2

2.4 2 0.85 34 2

7 1.7 0.4 60 1

5.8 1.6 0.4 3.4 1

5.9 1.6 0.4 43 1


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measured Qrr (nC)

60 0.47% 3.4 30 30

67 0.53% 4.2 18 30

70 0.40% 4.8 16 30

73.5 0.49% 6.6 9.7 30

74 0.51% 7.0 9.2 30

74 0.49% 7.0 7.5 30

75 0.53% 7.8 8.8 30

77.5 0.50% 10.7 7 30

78 0.50% 11.5 5.5 30

67 0.40% 3.5 13.8 3070 0.40% 3.9 8 30

72 0.39% 4.6 3.2 30

73.5 0.39% 5.2 3 30

75 0.40% 6.1 3.5 30

77 0.43% 8.4 2.7 30

78 0.40% 8.9 1.7 30

57 0.77% 3.0 35 30

58 0.67% 4.6 25 30

58.2 0.67% 6.5 20 30

58.5 0.67% 7.5 17 3059 0.73% 8.2 15 30

74.5 0.47% 6.1 4 30

77 0.43% 8.2 6 30

57.6 0.50% 3.4 16 30

58.6 0.50% 6.9 8 30

58.9 0.48% 8.2 7 30

58.3 0.54% 5.2 2 30

59.4 0.60% 9.1 0.6 30

45.7 0.50% 1.3 34 23

57.8 0.44% 4.2 3.5 3053.2 0.56% 1.3 36 30

54 0.48% 2.5 25.9 30

55.1 0.52% 2.5 18 30

55.6 0.56% 2.8 16 30

56.6 0.56% 3.7 8 30

57.6 0.54% 4.3 6.3 30

57.7 0.64% 4.6 10.7 30

ThermalResistanc

e qJA

RDSonTemperatu

reCoefficient

RDSon(Vg=10V)

(m)

Forward conductingcurrent in

measuring Qrr (A)


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57.8 0.53% 4.8 6.7 30

55.1 0.52% 2.2 9 30

55.6 0.48% 2.4 8.5 30

56.6 0.48% 3.2 6 30

57.8 0.44% 4.2 3.5 30

54 0.56% 1.6 28.6 30

45.7 0.52% 1.3 34 2346 0.64% 2.2 17.3 30

46.3 0.56% 3.8 5.7 30

58.3 0.52% 5.2 2 30

47.5 0.60% 2.7 45 30

46.3 0.52% 4.0 13.6 30

46.3 0.52% 4.8 8 30

46.3 0.52% 5.3 8.4 30

45.7 0.80% 0.9 117 30

46 0.48% 1.5 70 30

47.5 0.60% 2.7 45 30

47.7 0.56% 2.9 36 30

48 0.07% 3.5 35 30

48.5 0.76% 4.1 26 30

48.8 0.72% 4.7 25 30

49.1 0.68% 5.8 10 30

62.5 0.44% 12.5 8 2

60.5 0.48% 7.0 13 2.1

75.5 0.64% 3.2 40 2.5

80.5 0.40% 5.1 23 2.991.5 0.40% 8.2 9 2.7

89.9 0.36% 9.0 9 10

96 0.52% 6.8 20 2

97.1 0.48% 8.3 20 2

85.5 0.56% 3.6 65 2

91.9 0.48% 4.2 57 2

91.9 0.56% 5.4 38 2

92.7 0.52% 7.0 32 2

58.3 0.56% 5.7 1.7 20

59.4 0.48% 8.0 4 2057.7 0.44% 3.6 10 20

59.1 0.48% 5.3 8.4 20

59.2 0.44% 8.8 9.1 20

60.7 0.50% 15.0 0 20

56.5 0.56% 2.5 37.5 20

55.9 0.72% 3.4 33 20

56.5 0.80% 4.1 28 20


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57 0.80% 4.8 22 20

41 0.60% 4.7 10.7 30

47 0.53% 8.1 5 15

40 0.48% 1.6 50 2

46.4 0.48% 2.8 32 2

41.15 0.48% 2.7 32 2


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Qg(VGS-10V) (nC) ID Max (A)

15 30 73 117

15 20.5 48 88

15 15 37 76

15 11.3 26 63

15 11 25 58

15 12.5 29.3 58

15 9.2 21 54

15 7.1 18.2 40

15 6 14.1 35

15 21.8 44 9815 18 38 89

15 16 32 78

15 12.8 25.7 73

15 11 21.8 12.6

15 9 17.8 49

15 7.2 14.6 10.2

15 16.8 41 79

15 11 24 54

15 7.6 17.5 41

15 6.8 15.4 3715 6.2 13 32

15 11 22 55

15 8.1 16.2 44

15 17.2 28.2 64

15 9 16.5 40

15 8.2 15.8 38

15 10.7 25 58.5

15 6 13 30

15 40.2 83.6 171

15 13.5 32 6615 39 88 191

15 32 74 130

15 22 52 104

15 20 45 90

15 15.9 34.4 75

15 12.9 31 64

15 11.5 25.4 57

QrrCharacterization

voltage

Qg(VGS=4.5V)(nC)


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15 11.3 22.4 59

15 25.6 62 115

15 12.8 53 100

15 19.2 43.8 85

15 13.5 32 66

15 34.3 71.3 155

15 40.2 83.6 17115 24.5 49.5 117

15 12.2 25 75

15 10.7 25 58.5

15 22 49.4 91

15 10.8 21.5 80.5

15 8.7 17.3 74.6

15 8 16 65.8

15 62.1 148 166

15 34 76.5 147

15 22 49.4 93

15 19 43 79

15 15.9 31 70

15 12.8 28.5 53

15 11.3 25.5 47

15 9.2 20.9 41

15 7.7 15.2 6.4

15 12.2 25 9.9

15 36 75 15

15 24 46 12.215 9.2 18.3 9

15 10.5 20.4 11.7

15 15 28 11.4

15 15.6 29 10.5

15 26.3 58.9 17

15 23.3 52.1 16

15 17.4 38.5 13.6

15 12.4 25 12.5

15 10.5 24 57

15 6.5 15 5015 12.6 29 69

15 8 16 41

15 8.8 16.3 34

15 4.6 8.4 23

15 20 46.5 79

15 15.7 37.5 75

15 12.4 28 56


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15 10.1 22.8 46

15 11.5 25.4 89

15 6 12 30

15 22.6 47.9 100

15 13.6 29.4 64

15 14.2 30.5 65


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Packgage

both DPAK

both DPAK

both DPAK

both DPAK

both DPAK

both DPAK

both DPAK

both DPAK

both DPAK

both DPAK both DPAK

both DPAK

both DPAK

both DPAK

both DPAK

both DPAK

low DPAK

low DPAK

low DPAK

low DPAK low DPAK

both DPAK

both DPAK

both DPAK

both DPAK

both DPAK

both SO8FL

both SO8FL

low SO8FL

both SO8FLboth SO8FL

both SO8FL

both SO8FL

both SO8FL

both SO8FL

both SO8FL

both SO8FL

LowSideMOSFET only or

Both


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both SO8FL

both SO8FL

both SO8FL

both SO8FL

both SO8FL

both SO8FL

low SO8FLlow SO8FL

low SO8FL

both SO8FL

low SO8FL

both SO8FL

both SO8FL

both SO8FL

low SO8FL

low SO8FL

low SO8FL

low SO8FL

low SO8FL

low SO8FL

low SO8FL

low SO8FL

both SOIC8

both SOIC8

both SOIC8

both SOIC8both SOIC8

low SOIC8

both SOIC8

both SOIC8

low SOIC8

low SOIC8

low SOIC8

low SOIC8

both u-8FL

both u-8FLboth u-8FL

both u-8FL

both u-8FL

both u-8FL

low u-8FL

low u-8FL

low u-8FL


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low u-8FL

both SO8FL

both u-8FL

low SO8FL

low u-8FL

low SO8FL


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Driver

NCP5911 6.5 0.9 0.7 30

NCP5901 15 2 1 27

NCP5359A 15 2 1 20NCP3418 15 1.8 1 30

MaximDriver

Voltage Vdr(V)

EnterSourcing

Resistance @HS

EnterSinking

Resistance@ HS ()

Enter RiseDelay

TimetpdhDRVH(ns)


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15 0 1

20 0 2

20 0 525 0 0

Enter Fall DelayTime tpdlDRVH

(ns)

Enter ExternalGate Resistance

Rgex ()

EnterQuiescent

Current (mA)


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Revision HistoryVersion 1.0 (Sept 1st 2011)

Initial release for MS Office 2003

Version 2.0 (Jan 11th 2012)

Efficiency Simulator2003 2.0

Documents

Transcript of Efficiency Simulator2003 2.0