Dr Androula Nassiopoulou Dr Androula Nassiopoulou

DirectorDirector

Institute of MicroelectronicsInstitute of MicroelectronicsNCSR DemokritosNCSR Demokritos

ORGANIZATIONAL STRUCTURE OFORGANIZATIONAL STRUCTURE OFNCSR DEMOKRITOSNCSR DEMOKRITOS

Ministry of Development

General Secretariat for Research and Technology

NCSR DEMOKRITOSNCSR DEMOKRITOS

Technology ParkDepartment for Technical Support

Secretariat of Special Accounts

Liaison OfficeCentral administration

Institute of Chemistry

Institute of Radioisotopes & Radiodiagnostic

Products

Institute of Microelectronics

(IMEL)

Institute of Informatics and

Telecommunications

Institute of Biology

Institute of Nuclear

Technology

Institute of MaterialsScience

Institute of Nuclear Physics

ACADEMIC AND TECHNOLOGICAL ACADEMIC AND TECHNOLOGICAL EXCELLENCE AT IMELEXCELLENCE AT IMEL

20 years of research and technology developmentIMEL:IMEL:

AchievementsAchievements::

Infrastructure and research facilities for Micro and Nanotechnology unique in Greece

• Fully equipped silicon processing laboratory• E-beam lithography equipment• Micromachining and Sensor laboratory• Fully equipped laboratory for characterization of

materials, devices and structures Important know-how Experienced personnel An Intellectual property portfolio, which continues to

expand

Infrastructure and research facilities for Micro and Nanotechnology unique in Greece

• Fully equipped silicon processing laboratory• E-beam lithography equipment• Micromachining and Sensor laboratory• Fully equipped laboratory for characterization of

materials, devices and structures Important know-how Experienced personnel An Intellectual property portfolio, which continues to

expand

International Scientific Advisory CommitteeInstitute Administration and

Technical Support

Central facilities for Silicon Processing

Institute Advisory Board

Institute Director

Services in Micro, Nanotechnologies and

Microsystems

Program I: Micro and Nanotechnologies

Program III: Micro and Nano-Systems Program II: Micro

and Nanoelectronics

Secretariat

Managerial office - provisions

Group of technicians for technical support

Education and training

IMELIMEL

PATTERNING TECHNOLOGIESPATTERNING TECHNOLOGIESLithography and Plasma EtchingLithography and Plasma Etching

FOCUS OF RESEARCH

Development of novel materials, processes

and process simulation methods for micro

and nanofabrication

Key Researchers: M. Hatzakis, IBM fellow and ex-director of IMEL

E. Gogolides

P. Argitis

N. Glezos

• Develop new resists: aliphatic to fluorinated or Silicon containing polymers

• Develop new environmentally friendly and biocompatible photoresists

• Add etch resistance compounds in resist formulation• Understand and Simulate Line Edge Roughness using Fractal Theory

• Develop lithography and plasma etching simulators• Develop new etching processes for MEMS and Nanotechnology

Frontiers in Lithography (193 / 157nm, EUV, e-beam), Frontiers in Lithography (193 / 157nm, EUV, e-beam), Nano-patterning, MEMS and BioMEMS patterningNano-patterning, MEMS and BioMEMS patterning

• Smaller Devices Smaller λ in optical lithography:193, 157nm, EUV, e-beam

• Bio Mems Patterning•Need to develop new resists and processes

• Thick (0.4μm) to Ultra thin (0.15μm) resist films•Need to increase plasma resistance of photoresists

• Critical dimension becomes less than 70nm•Need to Reduce Line Edge Roughness

The problems

The solutions

Frontiers in Optical Lithography (193 Frontiers in Optical Lithography (193 - - 157 nm)157 nm)

New resists for 193nm lithographySingle layer acrylate. Positive, 93nm lines, Negative 150nm lines; P. Argitis et al. Greek PatentC. Diakouakos et al. Microelec. Engng. 2001

Bilayer resist for 157nm based on Siloxanes. 70nm linesA. Tserepi et al., J. Vac. Sci. Technol. Nov. 2000,Microelec. Engng. 2001

Novel etch resistance compounds synthesized for use as resist additives

UV UV UV UVDERIVATIVES DERIVATIVES

O

O

NH

O

O

O

O

O

OO

SUBLSOL ETCHRATE193 nm 248 nm

SUBLSOL ETCHRATE

NOVEL MIXED NOVEL MIXED

0.05 ** 1600C 2600

0.26 ** 1300C 2800

0.17 ** 1600C 3100

27000.20 * 1600C

(XI)

(XII)

(XIII)

(XIV)

O.N. R.P. O.N. R.P.

0.36

0.86

0.45

0.52

2.25 0.78

0.882.08

2.50

2.39 0.72

0.69

193 nm 248 nm

Si and SiOSi and SiO22 Etching in Fluorocarbon Plasmas Etching in Fluorocarbon Plasmas

Dielectric Etching, Optoelectronics and MEMS etchingDielectric Etching, Optoelectronics and MEMS etching

• Fluorocarbon plasma and HDP reactors used

• Both Experimental and Theoretical Work

• Many problems (RIE lag, etch stop, Inverse RIE lag, roughness)

• New processes needed in ICP tools, with reduced roughness,

for both MEMS and Nanotechnology

• Detailed models for etching in fluorocarbon plasmas

• Prediction of ASPECT RATIO dependent phenomena

SEMICONDUCTOR NANOSTRUCTURES. SEMICONDUCTOR NANOSTRUCTURES. Materials, Processes, Properties and Materials, Processes, Properties and

Nanoelectronic DevicesNanoelectronic Devices

FOCUS OF RESEARCH

Nanopatterning (nanostructuring using the “top-down” approach)

Silicon nanocrystal growth and characterization Si/SiO2 multilayers and superlattices Si/CaF2 multilayers and superlattices Silicon and Germanium nanocrystals in SiO2 by

different techniques Nanoelectronic devices for memory, light emitting

and other applications Theoretical work, process and device modeling

Key Researchers: A.G. Nassiopoulou D. Tsoukalas P. Normand

Si-Nanocrystal MOS Memory Devices Obtained Si-Nanocrystal MOS Memory Devices Obtained by Low-Energy Ion-Beam-Synthesisby Low-Energy Ion-Beam-Synthesis

Candidates for Non-Volatile Dynamic Memory Applications

Candidates for Non-Volatile Dynamic Memory Applications

ESSDERC’2000, Appl. Phys. Lett. 2000ESSDERC’2000, Appl. Phys. Lett. 2000

SILICON SENSORS AND MICROSYSTEMSSILICON SENSORS AND MICROSYSTEMS

FOCUS OF RESEARCH

Silicon micromachining techniques and processes

Silicon sensor devices and microsystems

Modeling, characterization and testing of sensors

Microsystem design, fabrication and

characterization

Development of read-out electronics and

packaging

NOVEL PROCESS FOR THE NOVEL PROCESS FOR THE FABRICATION OF SUSPENDED FABRICATION OF SUSPENDED

MEMBRANES FOR THERMAL SENSORSMEMBRANES FOR THERMAL SENSORS

100μm

The process is based on the isotropic etching of silicon using High Density Plasma etching.

High lateral etch rates can be achieved (6-7μm/min).

The process is CMOS compatible.

Oxide/nitride membranes with dimensions 100x100μm2, can be easily fabricated.

The process is based on the isotropic etching of silicon using High Density Plasma etching.

High lateral etch rates can be achieved (6-7μm/min).

The process is CMOS compatible.

Oxide/nitride membranes with dimensions 100x100μm2, can be easily fabricated.

WAFER BONDING USED IN WAFER BONDING USED IN SENSOR TECHNOLOGYSENSOR TECHNOLOGY

Apply wafer bonding

technique

Pressure sensors

Dry release processes and vapour sensing A technology to combine

heterogeneous functions

3D View of pressure Sensor

SEM cross section images

COMBINING DRY RELEASED CANTILEVERS COMBINING DRY RELEASED CANTILEVERS WITH POLYMERS TO MEASURE HUMIDITYWITH POLYMERS TO MEASURE HUMIDITY

Stress effect

Parallel beam to substrate

INTEGRATED SILICON OPTICAL BIOSENSORSINTEGRATED SILICON OPTICAL BIOSENSORS

Monolithically Integrated Silicon Light Emitters, Optical Fibers and Detectors.

Optical Coupling Efficiency 40%.

High Stable and Repeatable Measurements of the Detector Photocurrent.

Five Mask Process with Standard IC Technology

PP + ++ +S iO S iO

B o ro n B o ro nS p a c e r S p a c e r

S i N F ib e r

L ig h t E m itte r D e tec to r

N S u b stra te

N +

Av alan ch e d iodel

2 2

3 4

MICROELECTRONIC DESIGN FOR MICROELECTRONIC DESIGN FOR FUTURE OE LINKSFUTURE OE LINKS

FOCUS OF RESEARCH

Develop innovative ICs for optoelectronic links Implement phenomenological models for

optoelectronic devices (photodiodes, VCSELs, etc.) in IC design environment

Develop a wafer-scale integration technology for high-density OE links

IMEL’s infrastructure 1IMEL’s infrastructure 1

Silicon processing equipmentSilicon processing equipment (unique in Greece) (unique in Greece)•Clean room area of 300 m2

•Laminal flow chemical benches•Thermal processing•Chemical Vapor Deposition•Thermal evaporation (sputtering, e- gun evaporation)•Ion implantation•Optical lithography systems•Electron beam lithography system•Plasma Processing (RIE, ICP)•Process Inspection equipment

IMEL’s infrastructure 2IMEL’s infrastructure 2

Characterization equipmentCharacterization equipment Electrical characterization equipment Probe stations Optical characterization Microscopy equipment, ellipsometry Sensor characterization (gas, flow, pressure)

Packaging equipment (Dicing saw, wire bonding, die bonder)Packaging equipment (Dicing saw, wire bonding, die bonder)Chemistry laboratoryChemistry laboratoryDesign and modeling / simulation toolsDesign and modeling / simulation tools

7 Workstations (2HP C160, 1HP 9000/785, 2 Sun Sparc 20, 2 Sun Sparc Ultra 1, 1HP 9000/720)

Design software (Mentor graphics: 4 seats, Cadence: 2 seats, synopsis: 2 seats, orcad for PCBs), MEMCAD 4.6, ANSYS and Silvaco softwares.

PERSONNELPERSONNEL

Research Scienctists 11

Research engineers 2

Post doctoral scientists 6

Phd students 11

Technicians 3

Administrative personnel 2

Personnel on contract: a) Scientific 6

b) Technicians 4

Total 45

IMEL COORDINATES AN EDUCATIONAL PROGRAMME (EPEAEK) ON MICROELECTRONICS FOR MASTER AND PhD DEGREES-IN COLLABORATION WITH THE UNIVERSITY OF ATHENS

Start-date :1/10/1998

Duration of the programme related to the MSc degree : 18 months

Duration of PhD cycle : 4 years

Number of students : 15 / year

•IMEL is partly engaged in two other MSc and PhD programs in collaboration with the National Technical University of Athens (New materials) and the University of Patras (System design) respectively.

IMEL organizes every year :

•Summer Schools on selected areas, addressed to graduate students.

•Training courses, addressed to research scientists, engineers and technicians.

•Conferences, workshops etc.

EDUCATION AND TRAININGEDUCATION AND TRAININGDEVELOPMENT OF HUMAN RESOURCESDEVELOPMENT OF HUMAN RESOURCES

YEARYEAR 2002 2002

A CENTER OF EXCELLENCE IN A CENTER OF EXCELLENCE IN MICRO, NANOTECHNOLOGIES AND MICRO, NANOTECHNOLOGIES AND

MICROSYSTEMS MICROSYSTEMS

AT IMEL/NCSR “DEMOKRITOS”AT IMEL/NCSR “DEMOKRITOS”

A Center of Excellence in Micro, Nanotechnologies and Microsystems has been established in the year 2002 at IMEL/NCSR “Demokritos”, supported by the Greek General Secretariat for Research and Technology in the Ministry of Development.

MAIN OBJECTIVESMAIN OBJECTIVES

To further promote long term research into understanding phenomena, mastering processes and developing research tools.

To promote development of fundamental knowledge To promote development of novel products and

production processesTo develop human potential by educational and

training activities To develop the access to services in advanced

processes and high technologyTo promote the transfer of technology to industry.To further promote cooperative research and

technological and educational activities

To further promote long term research into understanding phenomena, mastering processes and developing research tools.

To promote development of fundamental knowledge To promote development of novel products and

production processesTo develop human potential by educational and

training activities To develop the access to services in advanced

processes and high technologyTo promote the transfer of technology to industry.To further promote cooperative research and

technological and educational activities

RESEARCH ACTIVITIES IN THE ABOVE FIELDS RESEARCH ACTIVITIES IN THE ABOVE FIELDS

1. Micro and Nanofabrication Optical lithography and lithographic materials Electron beam lithography. Etching processes Thermal processes Thin film deposition techniques

2. Nanoelectronic devices for integrated circuits Single electron transistors, resonant tunneling devices, molecular

devices and interconnections of devices Optical and optoelectronic links Self-assembled building blocks for nanoscale ICs

3. New electronic materials Seniconductor nanocrystals and other low dimensional structures

in different isolating matrices Molecular materials

4. Microsystems and Sensors

MMN Greek Network on Microelectronics, MMN Greek Network on Microelectronics, Microsystems and NanotechnologyMicrosystems and Nanotechnology

MMN Greek Network on Microelectronics, MMN Greek Network on Microelectronics, Microsystems and NanotechnologyMicrosystems and Nanotechnology

To promote collaboration between all national organizations involved in Microelectronics, including research centers, universities and private sector.

To develop mechanisms to promote awareness of worldwide scientific and technological development

To develop cooperative educational and training activities, in order to increase the human potential of trained people in the above technologies

Main Main objectivesobjectives