Dotseven Brochure Vf

A European Integrated Project supported through the Seventh Framework Programme for Researchand Technological Development.

Towards 0.7 THz Silicon-Germanium Heterojunction Bipolar Technology (0.7 THz SiGe HBT)

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100 Gb/sWireless Communication

mmWave & THzRadar Applications

mmWave &THzImaging and Sensing

Towards 0.5 TeraHertz Silicon/Germanium Heterojunction Bipolar technology (SiGe HBT)

From 0.5 to 0.7THz

Objective

DOTSEVEN is a very ambitious 3.5 year R&D project targeting the development of silicon germanium (SiGe) heterojunction bipolar transistor (HBT) technologies with cut-off frequencies (fmax) up to 700 GHz. Special attention will be paid to clearly demonstrate the manufacturability and integration with CMOS as well as the capabilities and benefits of 0.7 THz SiGe HBT technology by benchmark circuits and system applications in the 0.1 to 1 THz range.

The main objective of the DOTSEVEN consortium is therefore to reinforce and further strengthen Europe’s leading edge position in SiGe HBT technology and modeling as well as SiGe enabled mm-wave applications so as to stay significantly ahead of non-European competition. A highly qualified and success-proven consortium has been set-up to achieve these goals.

The successful EC IP DOTFIVE [DOT5] has established new benchmarks for SiGe HBT performance with record fT / fmax values of 300 GHz and 500GHz respectively [Hein10].

However, from the insights obtained during DOTFIVE, it has become clear that already around 400 GHz the conventional DPSA SEG (double-polysilicon-selfaligned selective epitaxially grown) emitter/base architecture of the SiGe HBT has to be replaced by more innovative concepts. One possible solution offering much higher speed potential was demonstrated by IHP with the “selective-epitaxially raised base contact” approach [Hein10]. It became also clear that further progress beyond 500 GHz will only be possible by smaller steps involving innovative research on doping and dopant

activation methods, on balanced vertical and lateral scaling, and on new device architectures with lowest parasitic elements. Constraints imposed by the simultaneous integration into a CMOS process flow make the task even more challenging. In order to reach the very ambitious 700 GHz goal, it will be mandatory to introduce innovative process modules (WP1), and to understand the fundamental physical limitations and the impacts on device reliability (WP2). Progress in device performance makes only sense if it can be beneficially and successfully deployed in circuits and applications (WP4). For this to happen the development of better characterization methods and improved compact models is mandatory (WP3).

To develop SiGe heterojunction bipolar transistors operating at maximum oscillation frequencies of up to 700 GHz at room temperature.

Towards 0.7 THz - Silicon-Germanium Heterojunction Bipolar Technology - (0.7 THz SiGe HBT)

Roadmap and applications

THz technology is an emerging field which has demonstrated a wide ranging potential. Extensive research during the last years has identified many attractive application areas, and paved the technological paths towards broadly usable THz systems. THz technology is currently in a pivotal phase and will soon be in a position to radically expand our analytical capabilities via its intrinsic benefits.One of the most pressing challenges of THz applications

is the development of cost effective, compact & efficient THz signal sources and receivers for everyday applications. In this context, DOTSEVEN is planned to continue the push for fully integrated cost efficient electronic THz solutions. The deployment of the associated high-performance circuits and systems in commercial other non-military markets is driven mainly by cost, form-factor and energy-efficiency.

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TARGET MONTH

SiGe HBT 1 (PDK1) IHP: fmax / td = 500 GHz / 2.0 ps IFAG: fmax / td = 400 GHz / 2.5 ps 7

SiGe HBT 2 fmax / td = 600 GHz / 1.7 ps 21

SiGe HBT 3 fmax / td = 700 GHz / 1.4 ps 41

Demonstrators (run 2)

Fundamental Operating Frequency of MMIC: 240 GHz240 GHz Radar DemonstratorCommunication Demonstrator: Towards 100 Gbps THz Imaging demonstrator (>300 GHz)

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Task 5.1: Project Identity SetTask 5.2: Training activities: Tutorials

WP5 Training & Dissemination

Task 4.1: Benchmark circuit for model verificationTask 4.2: Circuit building blocks for

millimetre-wave systemsTask 4.3: Application evaluation / demonstrators

WP4 Millimeter-wave circuit applications and demonstrators

Technical Project Overview

• Broadband ADCs with 50-100GS/s and >25GHz signal bandwidth at 5-6 bit resolution

• 100 Gb/s wireless data transmission

• Satellites

High-speedCommunication

• >120 GHz industrial sensors and automation

• Automotive radars (affordable vehicle and road safety for everyone)

RadarApplications

• Secure Mass transportation (security screening, mmWave person scanning)

• Heath care and biology

• Medical equipment

• Patient monitoring

• Tissue and genetic screening

mmWave,THz Imagingand Sensing

Illustration of mm-Wave and THz applications

BenefiTs of 0.7 THz siGe

• Opens the door to new THz applications • Enables circuits operating up to 240 GHz

fundamental frequency • Improved energy efficiency (PAE)

at lower operating frequencies (f_op)• Higher integration capability • Low cost due to moderate litho

requirements • Antennas in Package • ( Antenna Size 1/3 when

fop=80GHz > 240 GHz)• „More than Moore“,

„Beyond (and ahead) of CMOS“

CHALLenGes

• Reliability- Yield (e.g. leakage currents,

very thin SiGe base layers) - Excessive selfheating (performance

degradation / electromigration)- Extremely high emitter / collector

current density (electromigration)- Degradation effects under

mixed-mode stress- ESD protection

• Compatibility with CMOS processing at the 130/90 nm mode

DOTSEVEN performance targets

WP1 SiGe HBT process technology platform

Task 1.1: Advanced HBT architectureTask 1.2: fT enhancementTask 1.3: CMOS integrationTask 1.4: Circuit fabrication

WP2 TCAD & physics-based predictive modelling

Task 2.1: Electrical device simulation toolsTask 2.2: Combined thermal/device simulationTask 2.3: Device reliability analysis

WP3 Device characterization and compact modelling

Task 3.1: Device characterization and test structuresTask 3.2: Compact model developmentTask 3.3: Compact model parameter extractionTask 3.4: Predictive & statistical compact modellingTask 3.5: SiGe HBT reliability characterization

& modelling

WP6 Management

Task6.1: Administrative, financial & contractual coordinationTask 6.2: Technical ManagementTask 6.3: Overall Quality & risk controlTask 6.4: Intra-consortium communication Strategy

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Consortium:

Acknowledgment:

Supported by the European Commission through the Seventh Framework Programme (FP7) for Research and Technology development with up to 8.6M€, out of a total budget of 12.28M€. The DOTSEVEN project addresses the area “More than Moore“, Beyond (and ahead) of CMOS

The project has started on October 1st, 2012 and will end on March 31st, 2016.

Industry: Infineon Technologies AG, Dice Danube Integrated Circuit Engineering GmbH & Co KG, Alma Consulting GroupSmall/medium enterprises (SME): XMOD Technologies, SiversIMA Aktiebolag, Trebax ABAcademic & Institutional: Universita Degli Studi

di Napoli Federico II, Rheinisch-Westfaelische Technische Hochschule Aachen, Technische Universitaet Dresden, Université Bordeaux I, Bergische Universitaet Wuppertal, Universitaet Linz, Technische Universiteit Delft, Innovations for High Performance Microelectronics.

Project Coordinator: Infineon Technologies AG - Dr. Rudolf Lachner, [email protected] (+49) 89 234 49952

Literature: M. Schroter, G. Wedel, B. Heinemann, C. Jungemann, J. Krause, P. Chevalier, A. Chantre, “Physical and electrical performance limits of high-speed SiGeC HBTs - Part I: Vertical scaling” and «Part II: Lateral scaling”, IEEE Trans. Electron Dev., Vol. 58, No. 11, pp. 3687-3706, 2011.[DOT5] EU project targets 0.5-THz SiGe bipolar transistor», EE Times Europe print edition covering March 17 – April 6, 2008. see also DOTFIVE website: http://www.dotfive.eu/see www.dotfive.eu[Hein10] B. Heinemann et al., «SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay», Proc. IEDM, pp. 688-691, 2010.

Technical Project Manager:TU Dresden – Prof. Michael Schröter, [email protected] (+49) 35 14 63 37 687

Management Support: ALMA Consulting Group – Ms Julie Chupin, [email protected], ALMA Consulting Group – Ms Patricia Kudelka, [email protected]

www.dotseven.eu

The consortium has a balanced partnership including:

In order to reach these ambitious objectives the consortium consists of 14 partners from industry and academia in 6 European countries:

Dotseven Brochure Vf

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