Curs4 Engl
Transcript of Curs4 Engl
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DIGITAL CIRCUITSParameters of the integrated logic circuits
Static transfer characteristic
Noise margins
Fan-out & fan-in
Propagation time
Power Dissipation
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Static Transfer Characteristic
Output voltage variation function of input dcvoltage
Cannt be defined an unique voltage value forlogic 1 or 0
Transfer characteristic isnt unique characteristic bounded by two limit curves
to each input or output variable, two voltageintervals (domains) will be associated: allowed,and respectively guaranteed
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Static Transfer Characteristic for an Inverter
Four
voltageranges
Two for
inputs Two for
outputs
Defined byeightvoltage
values
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Input/Output voltage values VILmin minimum voltage level for logic 0 at input
VILmax
- maximum voltage level for logic 0 at input
VIHmin - minimum voltage level for logic 1 at input
VIHmax - maximum voltage level for logic 1 at input
VOLmin - minimum voltage level for logic 0 at output
VOLmax - maximum voltage level for logic 0 at output VOHmin - minimum voltage level for logic 1 at output
VOHmax - maximum voltage level for logic 1 at output
Index meaningI input
O output
L lowlogic 0
H - highlogic 1
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Defining the working regions
A logic circuit will work properly if the input voltagelevels will have admitted values (work in allowed
regions) Obtained output voltage levels will be into guaranteed
regions
Considering that output voltage will become inputvoltage for driven circuit(s), have five working regions: Normal working region for logic 0 and logic 1
Working region in presence of noise signals for logic 0 and
respectively 1 Transitory region
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Normal working region (no noise signals)
For low input voltage level (L), between
values VIL2 - VIL1 For high input voltage level (H) between
values VIH2 - VIH1
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Working region when noise signals apply
For low input voltage level (L), between
values VILmax VILmin For high input voltage level (H) between
values VIHmax - VIHmin
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Transitory region For input voltage levels between VIHmin
VILmax Those input voltages driving circuit from one
stable state to the other
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Noise margins
Noise (immunity) margins: stability at static
perturbations
the noise margin is the peak amount of spurious or"noise" voltage that may be superimposed on a weak
gate output voltage signal before the receiving gatemight interpret it wrongly
Guaranteed noise margin for a logic state is given by
difference between guaranteed output voltage level ofthe driving circuit and the worst case for the inputvoltage level accepted for that state by the driven
circuit
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Guaranteed noise margins (manufacturers
specifications)
For logic 0 state:
ML=VILmax-VOLmax For logic 1 state:
MH=VOHmin-VIHmin
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Example for TTL family
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Fan-out and Fan-in
The input of a circuit is a load for its drivercircuit
For a logic circuit generates guaranteed outputvoltage levels is a must to be driven at inputswith corresponding current levels
For circuit interconnection, important to designthe output current of the driving circuit, and to
consider the sum of input currents of the drivencircuits
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Fan-in factor for logic circuits
Fan-in (FI) and Fan-out (FO) factors are definedbased on some current values, thosecorrespondind to allowed input voltages and
respectively to guaranteed output voltages, inthe worst case: IILmax, IIHmin, IOLmax i IOHmin
For any integrated circuits family, a basic
(fundamental) gate is defined, and the fan-in/fan-out values for the rest of circuits are definedas multiples of the values for that basic gate
For an input, the FI value means the number N(N>1) of standard inputs (i.e. of basic gate)equivalent to that input: FI=N
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Fan-out factor for logic circuits
),min(,, HLIH
OH
H
IL
OL
L FOFOFOI
IFO
I
IFO =
=
=
When interconnecting logic circuits (from afamily), the following relations must be satisfied(associate with the worst case):
==
11
,i
n
IHOH
i
n
ILOL IIII
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Propagation Time
Propagation times (delay) (tpHL si tpLH) are defined for halves theinput/output signal amplitudes
Average propagation time: tpd=(tpHL+tpLH)/2
Important parameter for any circuit, giving sign of performance
Raising-up and fall-downtimes (tr , tf) are definedusing ratios of signalamplitude (0.1 and 0.9)
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Power Dissipation
Parameter depending on:
Power supply voltage (VCC
);
Absorbed currents from VCC whenoutput is logic 1 (ICCH), or 0 logic (ICCL);
Output current on shortcircuit (IOS);
Average power consumption (Pm);
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Average power dissipation on cc
V2I+
I=2 P+
P=P CCCCLCCHLH
CC
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Power dissipation on ac
Important power component, due to charging/discharging of stray output capacitances Cp
Power consumption during the switching
regime:
VCP CCPC f2
=
f switching frequency
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Total power dissipation
VCVIIPPP CCPCCCCLCCHC fCCm 22 ++
=+=
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TTL Logic Integrated Circuits
General considerations TTL standard series
TTL basic (fundamental) gateCircuit description
Gate operation
Parameters of TTL basic gate
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General Considerations
TTL (Transistor-Transistor-Logic)
Family with a lot of circuit series,developed based on a trade-off between
propagation speed and power dissipation Standard, high-speed (H), Low power (L),
Schottky (S)
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Gate operation for one input 0
T1 saturated, voltage from
T1 collector lowers,
transistor T2 off Low voltage level from T2
emitter drives T3off
High potential of T2collector opens transistorT4
UR2 low, UBE(T4)+UD1,5V,Ue>3,4V corresponding tologic level "1"
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Gate operation when both inputs at logic 1
T1 base-emitter junctionsreverse biased (reverse activeregion)
T1 base-collector junction andbase-emitter junctions of T2 &T3 make a chain of opendiodes (forward biased by R1from power supply), T2 & T3
saturated T4 off due to base potential,
lower than emitters, due topresence of diode D
Ue=UCES(T3) corresponding tologic "0"
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Transistors T4 & T3 switch in counter-time,making R
4being low (130), building a
low output impedance and a small timeconstant for charge/discharge of output
stray capacitances
BA=Ue *
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Logic Levels
VILmax = 0.8 V
VIHmin = 2 V
VOLmax = 0.4 V
VOHmin = 2.4 V
VT = 1.3V, threshold voltage, same
value for input and output voltages
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Noise Margins
Guaranteed values
ML = VILmax VOLmax = 0.8V 0.4V = 0.4VMH = VOHmin VIHmin = 2.4V 2V = 0.4V
Real values
ML = VT VOL = 1.3V 0.2V = 1.1V
MH = VOH VT = 3.5V 1.3V = 2.2V
It implies that prefered output idle state being '1'logic, and switching command being zeroactive, i.e. a signal going from high to low
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Input & output currents
By convention: positive value if gate
sinks current and negative value if gategenerates currents
IIH
= 40 A
IIL = -1,6 mA
IOH
= -800 A
IOL = 16 mA
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Fan-in/ fan-out
FIL = 1, IIL = - 1,6mA
FIH = 1, IIH = 40A
10),min(,2040
800,10
6.1
16===
==
=
= HLH
IL
OL
L FOFOFOA
AFO
mA
mA
I
IFO
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Static transfer characteristic
0V
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Input Characteristics
Vi < 0,8V
Vi grows over 0,8V, Ii lowersin absolute value
Vi > 1,3V, Ii tends abruptlytoward 0
Vi= 1,7V, I
i=0
Vi > 2 2,25V, Ii 28A
R
V-V-V=I
1
IBE(T1)CC
I
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Output Characteristics
VOL = f(IOL) IOL depends on T3 base
current, wich depends on T2emitter current, as:
R
V-V-V=I
2
CEs(T2)BE(T3)CC
C(T2)
R
V-V-V-V=I
1
BE(T3)BE(T2)BC(T1)CC
B(T2)
IE(T2) = IB(T2) + IC(T2) =3,2mA
R
V-I=I-I=I
3
BE(T3)
E(T2)3E(T2)B(T3)
T3 saturated, N=20, output current:IOL = NIB(T3) = 49mA
IOL
O Ch i i
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Output Characteristics
VOH = f(IOH) Figure below presents in positive domainVOH=f(IS) characteristics, where load current ISis considered IS= -IOH
T4 on, tending toward saturation
T4 when in forward active region, segment 1,VOH and IS are in relation:
IS
VOH= 3,7 - 32IS T4 saturated, curve 2, relation becomes:
V-V-1+
IR-V=V DBE(T4)
N
S2CCO
R
V-V-V-V+
R
V-V-V-V=I+I=I=I
4
CE(T4)DOCC
2
BE(T4)DOCC
C(T4)B(T4)E(T4)S
VO 4,5 - ISR4 Curves 1 and 2 cross eachother at IS 5mA
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Power dissipation
ICCH=IR1=(VCC-VB(T1))/R11mA
ICCL=IE(T2)=IC(T2)+IB(T2)=(VCC - VC(T2))/R2+(VCC-VB(T1))/R13,3mA
PCC 10mW
PC=CpVCC2f
Cp=15pF; f=1MHz, PC0,4mW; f=20MHz, PC7,5mW
Besides the two components PCC and PC, there is another, dueto simultaneous conduction of transistors T3 and T4. This extra
power consumption PDS has the formula:
V2I+I=P CC
CCLCCHCC
)
T
t
2
I+
T
t
2.2
I(V=P
rCCmaxcCCmaxCCDS
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P ti D l
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Propagation Delay
Given by charging/discharging times of stray capacitance fromgates output and by switching times of transistors
tpHL = tc1 + tdes
tpLH = tc2 + tinc tpd = (tpHL + tpLH)/2
Switching times: tc1 = 5ns and tc2 = 8ns
Charging/discharging times of stray capacitances:
Formula for tinc, short-circuit current value is considered IOS For IOS = 18mA results tinc = 2.5ns
Calculated values: tpHL = 8ns i tpLH = 10.5ns
Data book values: tpHL = 8ns and tpLH= 12ns, resulting tpd = 10ns
I
V-VC=t
OL
OLOHpdes
I
V-VC=t
OH
OLOHpinc
P d P bl
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Proposed Problems
Find out the maximum value of a resistor may be connectedbetween two standard TTL gates, without modifying the circuitbehavior. How this resistor is affecting the noise margins?
Design a circuit based on a NAND TTL standard gate, able to
drive a LED. For the LED, following values are considered:VLED=1,6V and ILED=10mA.
Design a circuit based on a NOR TTL standard gate, able todrive a LED. For the LED, following values are considered:
VLED=0,65V and ILED=20mA. Design a positive edge detector circuit, using NAND gates.
If a pulse train signal is propagating through a NAND gate, howthis influences the filling factor of one pulse? But if propagatingthrough two NAND gates? Input signal has a 20MHz frequencyand a filling factor of .