Curs4 Engl

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    DIGITAL CIRCUITSParameters of the integrated logic circuits

    Static transfer characteristic

    Noise margins

    Fan-out & fan-in

    Propagation time

    Power Dissipation

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    Static Transfer Characteristic

    Output voltage variation function of input dcvoltage

    Cannt be defined an unique voltage value forlogic 1 or 0

    Transfer characteristic isnt unique characteristic bounded by two limit curves

    to each input or output variable, two voltageintervals (domains) will be associated: allowed,and respectively guaranteed

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    Static Transfer Characteristic for an Inverter

    Four

    voltageranges

    Two for

    inputs Two for

    outputs

    Defined byeightvoltage

    values

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    Input/Output voltage values VILmin minimum voltage level for logic 0 at input

    VILmax

    - maximum voltage level for logic 0 at input

    VIHmin - minimum voltage level for logic 1 at input

    VIHmax - maximum voltage level for logic 1 at input

    VOLmin - minimum voltage level for logic 0 at output

    VOLmax - maximum voltage level for logic 0 at output VOHmin - minimum voltage level for logic 1 at output

    VOHmax - maximum voltage level for logic 1 at output

    Index meaningI input

    O output

    L lowlogic 0

    H - highlogic 1

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    Defining the working regions

    A logic circuit will work properly if the input voltagelevels will have admitted values (work in allowed

    regions) Obtained output voltage levels will be into guaranteed

    regions

    Considering that output voltage will become inputvoltage for driven circuit(s), have five working regions: Normal working region for logic 0 and logic 1

    Working region in presence of noise signals for logic 0 and

    respectively 1 Transitory region

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    Normal working region (no noise signals)

    For low input voltage level (L), between

    values VIL2 - VIL1 For high input voltage level (H) between

    values VIH2 - VIH1

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    Working region when noise signals apply

    For low input voltage level (L), between

    values VILmax VILmin For high input voltage level (H) between

    values VIHmax - VIHmin

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    Transitory region For input voltage levels between VIHmin

    VILmax Those input voltages driving circuit from one

    stable state to the other

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    Noise margins

    Noise (immunity) margins: stability at static

    perturbations

    the noise margin is the peak amount of spurious or"noise" voltage that may be superimposed on a weak

    gate output voltage signal before the receiving gatemight interpret it wrongly

    Guaranteed noise margin for a logic state is given by

    difference between guaranteed output voltage level ofthe driving circuit and the worst case for the inputvoltage level accepted for that state by the driven

    circuit

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    Guaranteed noise margins (manufacturers

    specifications)

    For logic 0 state:

    ML=VILmax-VOLmax For logic 1 state:

    MH=VOHmin-VIHmin

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    Example for TTL family

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    Fan-out and Fan-in

    The input of a circuit is a load for its drivercircuit

    For a logic circuit generates guaranteed outputvoltage levels is a must to be driven at inputswith corresponding current levels

    For circuit interconnection, important to designthe output current of the driving circuit, and to

    consider the sum of input currents of the drivencircuits

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    Fan-in factor for logic circuits

    Fan-in (FI) and Fan-out (FO) factors are definedbased on some current values, thosecorrespondind to allowed input voltages and

    respectively to guaranteed output voltages, inthe worst case: IILmax, IIHmin, IOLmax i IOHmin

    For any integrated circuits family, a basic

    (fundamental) gate is defined, and the fan-in/fan-out values for the rest of circuits are definedas multiples of the values for that basic gate

    For an input, the FI value means the number N(N>1) of standard inputs (i.e. of basic gate)equivalent to that input: FI=N

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    Fan-out factor for logic circuits

    ),min(,, HLIH

    OH

    H

    IL

    OL

    L FOFOFOI

    IFO

    I

    IFO =

    =

    =

    When interconnecting logic circuits (from afamily), the following relations must be satisfied(associate with the worst case):

    ==

    11

    ,i

    n

    IHOH

    i

    n

    ILOL IIII

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    Propagation Time

    Propagation times (delay) (tpHL si tpLH) are defined for halves theinput/output signal amplitudes

    Average propagation time: tpd=(tpHL+tpLH)/2

    Important parameter for any circuit, giving sign of performance

    Raising-up and fall-downtimes (tr , tf) are definedusing ratios of signalamplitude (0.1 and 0.9)

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    Power Dissipation

    Parameter depending on:

    Power supply voltage (VCC

    );

    Absorbed currents from VCC whenoutput is logic 1 (ICCH), or 0 logic (ICCL);

    Output current on shortcircuit (IOS);

    Average power consumption (Pm);

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    Average power dissipation on cc

    V2I+

    I=2 P+

    P=P CCCCLCCHLH

    CC

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    Power dissipation on ac

    Important power component, due to charging/discharging of stray output capacitances Cp

    Power consumption during the switching

    regime:

    VCP CCPC f2

    =

    f switching frequency

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    Total power dissipation

    VCVIIPPP CCPCCCCLCCHC fCCm 22 ++

    =+=

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    TTL Logic Integrated Circuits

    General considerations TTL standard series

    TTL basic (fundamental) gateCircuit description

    Gate operation

    Parameters of TTL basic gate

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    General Considerations

    TTL (Transistor-Transistor-Logic)

    Family with a lot of circuit series,developed based on a trade-off between

    propagation speed and power dissipation Standard, high-speed (H), Low power (L),

    Schottky (S)

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    Gate operation for one input 0

    T1 saturated, voltage from

    T1 collector lowers,

    transistor T2 off Low voltage level from T2

    emitter drives T3off

    High potential of T2collector opens transistorT4

    UR2 low, UBE(T4)+UD1,5V,Ue>3,4V corresponding tologic level "1"

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    Gate operation when both inputs at logic 1

    T1 base-emitter junctionsreverse biased (reverse activeregion)

    T1 base-collector junction andbase-emitter junctions of T2 &T3 make a chain of opendiodes (forward biased by R1from power supply), T2 & T3

    saturated T4 off due to base potential,

    lower than emitters, due topresence of diode D

    Ue=UCES(T3) corresponding tologic "0"

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    Transistors T4 & T3 switch in counter-time,making R

    4being low (130), building a

    low output impedance and a small timeconstant for charge/discharge of output

    stray capacitances

    BA=Ue *

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    Logic Levels

    VILmax = 0.8 V

    VIHmin = 2 V

    VOLmax = 0.4 V

    VOHmin = 2.4 V

    VT = 1.3V, threshold voltage, same

    value for input and output voltages

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    Noise Margins

    Guaranteed values

    ML = VILmax VOLmax = 0.8V 0.4V = 0.4VMH = VOHmin VIHmin = 2.4V 2V = 0.4V

    Real values

    ML = VT VOL = 1.3V 0.2V = 1.1V

    MH = VOH VT = 3.5V 1.3V = 2.2V

    It implies that prefered output idle state being '1'logic, and switching command being zeroactive, i.e. a signal going from high to low

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    Input & output currents

    By convention: positive value if gate

    sinks current and negative value if gategenerates currents

    IIH

    = 40 A

    IIL = -1,6 mA

    IOH

    = -800 A

    IOL = 16 mA

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    Fan-in/ fan-out

    FIL = 1, IIL = - 1,6mA

    FIH = 1, IIH = 40A

    10),min(,2040

    800,10

    6.1

    16===

    ==

    =

    = HLH

    IL

    OL

    L FOFOFOA

    AFO

    mA

    mA

    I

    IFO

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    Static transfer characteristic

    0V

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    Input Characteristics

    Vi < 0,8V

    Vi grows over 0,8V, Ii lowersin absolute value

    Vi > 1,3V, Ii tends abruptlytoward 0

    Vi= 1,7V, I

    i=0

    Vi > 2 2,25V, Ii 28A

    R

    V-V-V=I

    1

    IBE(T1)CC

    I

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    Output Characteristics

    VOL = f(IOL) IOL depends on T3 base

    current, wich depends on T2emitter current, as:

    R

    V-V-V=I

    2

    CEs(T2)BE(T3)CC

    C(T2)

    R

    V-V-V-V=I

    1

    BE(T3)BE(T2)BC(T1)CC

    B(T2)

    IE(T2) = IB(T2) + IC(T2) =3,2mA

    R

    V-I=I-I=I

    3

    BE(T3)

    E(T2)3E(T2)B(T3)

    T3 saturated, N=20, output current:IOL = NIB(T3) = 49mA

    IOL

    O Ch i i

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    Output Characteristics

    VOH = f(IOH) Figure below presents in positive domainVOH=f(IS) characteristics, where load current ISis considered IS= -IOH

    T4 on, tending toward saturation

    T4 when in forward active region, segment 1,VOH and IS are in relation:

    IS

    VOH= 3,7 - 32IS T4 saturated, curve 2, relation becomes:

    V-V-1+

    IR-V=V DBE(T4)

    N

    S2CCO

    R

    V-V-V-V+

    R

    V-V-V-V=I+I=I=I

    4

    CE(T4)DOCC

    2

    BE(T4)DOCC

    C(T4)B(T4)E(T4)S

    VO 4,5 - ISR4 Curves 1 and 2 cross eachother at IS 5mA

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    Power dissipation

    ICCH=IR1=(VCC-VB(T1))/R11mA

    ICCL=IE(T2)=IC(T2)+IB(T2)=(VCC - VC(T2))/R2+(VCC-VB(T1))/R13,3mA

    PCC 10mW

    PC=CpVCC2f

    Cp=15pF; f=1MHz, PC0,4mW; f=20MHz, PC7,5mW

    Besides the two components PCC and PC, there is another, dueto simultaneous conduction of transistors T3 and T4. This extra

    power consumption PDS has the formula:

    V2I+I=P CC

    CCLCCHCC

    )

    T

    t

    2

    I+

    T

    t

    2.2

    I(V=P

    rCCmaxcCCmaxCCDS

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    P ti D l

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    Propagation Delay

    Given by charging/discharging times of stray capacitance fromgates output and by switching times of transistors

    tpHL = tc1 + tdes

    tpLH = tc2 + tinc tpd = (tpHL + tpLH)/2

    Switching times: tc1 = 5ns and tc2 = 8ns

    Charging/discharging times of stray capacitances:

    Formula for tinc, short-circuit current value is considered IOS For IOS = 18mA results tinc = 2.5ns

    Calculated values: tpHL = 8ns i tpLH = 10.5ns

    Data book values: tpHL = 8ns and tpLH= 12ns, resulting tpd = 10ns

    I

    V-VC=t

    OL

    OLOHpdes

    I

    V-VC=t

    OH

    OLOHpinc

    P d P bl

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    Proposed Problems

    Find out the maximum value of a resistor may be connectedbetween two standard TTL gates, without modifying the circuitbehavior. How this resistor is affecting the noise margins?

    Design a circuit based on a NAND TTL standard gate, able to

    drive a LED. For the LED, following values are considered:VLED=1,6V and ILED=10mA.

    Design a circuit based on a NOR TTL standard gate, able todrive a LED. For the LED, following values are considered:

    VLED=0,65V and ILED=20mA. Design a positive edge detector circuit, using NAND gates.

    If a pulse train signal is propagating through a NAND gate, howthis influences the filling factor of one pulse? But if propagatingthrough two NAND gates? Input signal has a 20MHz frequencyand a filling factor of .