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CPE213 - Chiang Mai University · [6] Integrated-Circuit Fabrication - CPE213 - ` k N 4 V F ` g o X...
Transcript of CPE213 - Chiang Mai University · [6] Integrated-Circuit Fabrication - CPE213 - ` k N 4 V F ` g o X...
[6] Integrated-CircuitFabrication
- CPE213 -
Electronic Devices for Computer Engineering
-- CPE213CPE213 --
Electronic Devices for Computer EngineeringElectronic Devices for Computer Engineering
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Integrated Circuit (IC)Integrated Circuit (IC)Integrated Circuit (IC)
IC = Electronic circuit fabricated in surface of a thin substrate of semiconductor material (based on planer technology) which can include several devices or components
• Small Scale Integration (SSI) ~10 gates• Medium Scale Integration (MSI) 10~100 gates• Large Scale Integration (LSI) 100~10k gates• Very Large Scale Integration (VLSI) 100k~ gates• Ultra-Large Scale Integration (ULSI) 1M~ gates
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Integrated Circuit (IC)Integrated Circuit (IC)Integrated Circuit (IC)
http://en.wikipedia.org/wiki/Moore's_law
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Integrated Circuit (IC)Integrated Circuit (IC)Integrated Circuit (IC)
http://www.sparkfun.com/tutorials/230
IC Packaging
http://www.circuitstoday.com/classification-of-integrated-circuits
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p-n Junctions pp--nn JunctionsJunctions
Photoresist
[1] Oxidize the Si sample[2] Apply the layer of photoresist
n-type Si
SiO2
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p-n Junctions pp--nn JunctionsJunctions
PolymerizedPhotoresist
Ultraviolet
n
Mask A
[3] Expose photoresistthrough mask A
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p-n Junctions pp--nn JunctionsJunctions
[4] Remove unexposed photoresist
n n
[5] Remove SiO2 inwindows
Window
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p-n Junctions pp--nn JunctionsJunctions
[6] Remove Photoresist[7] Diffuse Br through windows
n
p p
Diffused p region
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p-n Junctions pp--nn JunctionsJunctions
Al
n
p p
[8] Evaporate Al onto the surface
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p-n Junctions pp--nn JunctionsJunctions
Mask B
n
p p
[9] Use photoresist and mask Bto etch away Al except in p contact area
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BJTsBJTsBJTs
[1] Oxidize the Si sample[2] Open window in oxide
n-type Si
SiO2
[3] Diffuse Br through windows
n
p
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BJTsBJTsBJTs
n
pn+
[4] Oxidize [5] Open window[6] Diffuse P
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BJTsBJTsBJTs
Base
Emitter
Emitter Base
collector
n
pn+
[4] Oxidize [5] Open window[6] Diffuse P
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Multi-emitter BJTsMultiMulti--emitteremitter BJTsBJTs
n
pn+n+n+n+
C BE1 E2 E3
B
C
E1 E2
E3
B
C
E1 E2
E3
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BJTsBJTsBJTs
p+-isolation
p-substrate
n
pn+
p+p+ p+n
pn+
C1 E1 B1 C2 E2 B2
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BJTsBJTsBJTs
CCV
C1
E1B1
C2
E2B2
n
pn+
p+p
np+p+p+
n
pn+
C2 E2 B2 B1 E1 C1
p
R
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NMOSNMOSNMOS
DDV
G1
n+
p
n+n+n+
D1
S1
D2
S2G2
G1B S1 D1 G2S2 D2
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CMOSCMOSCMOS
DDV
G1B1 S1 D1 G2 S2D2 B2
n+
p
n+
n
p+ p+