Corial 200RLCorial 200RL

COSMA Software withCOSMA Software with:: Edit menu for process recipe edition,Edit menu for process recipe edition,

Adjust menu for process optimizing,Adjust menu for process optimizing,

Maintenance menus for complete equipment Maintenance menus for complete equipment

control via internet with VPN (Virtual Private control via internet with VPN (Virtual Private

Network).Network).CORS Software forCORS Software for:: Data reprocessing (Measures and data Data reprocessing (Measures and data

comparison).comparison).

Equipment Control & SoftwareEquipment Control & Software

A Tool Organized in A Tool Organized in Successive LevelsSuccessive Levels

ActionActionss

ConstructorConstructor

LotsLotsActionsActions

ProcessProcess

Closed-loopClosed-loop

Server for Server for GUIGUI

COSMA COSMA SupervisorSupervisor

Embedded Embedded control PUcontrol PU

Embedded Embedded control control functionfunction

COSMA COSMA ControllerController

Process Process ControllerController

Device Device ControllersControllers

Physical Physical devicesdevices

OperatorOperator

Remote GUIRemote GUI

PC UserPC User

MonitorinMonitoringg

MonitorinMonitoringg

MonitorinMonitoringg

Diagram ModesDiagram Modes

Stand-byStand-byModeMode

Step by stepStep by step

ModeMode

ProductionProductionModeMode

OptimizationOptimizationModeMode

ConstructorConstructorModeMode

Shut downShut downModeMode

NormalNormal

ErrorsErrors

OperatorOperator

ProductionProduction

MaintenanceMaintenance

ConstructorConstructor

A Communicant ToolA Communicant Tool

COSMA COSMA SupervisorSupervisor

COSMACOSMAGUIGUI

Customer Customer Ethernet NetworkEthernet Network

Process Process Control Unit Control Unit

(1)(1)

Process Process Control Unit Control Unit

(2)(2)

Device Device Control (1)Control (1)

EthernetEthernet

Device Device Control (2)Control (2)

EthernetEthernet

WANWAN

VPNVPNADSLADSLFix IPFix IP

FirewalFirewalll

DedicatedDedicatedEthernet Ethernet networknetwork

SystemSystem

Load-lockLoad-lock

RF GeneratorRF Generator

Electronic ControlElectronic Control

TMP ControlTMP Control

RIE ReactorRIE Reactor

HT/B

T P

ow

er

Supp

lies

HT/B

T P

ow

er

Supp

lies

Pumping SystemPumping System

TMPTMP

TVTV

ReactorReactor

Dry PumpDry PumpADP 122ADP 122

Load-L

ock

Valv

e

Load-lockLoad-lock

Gate valve for Gate valve for quick reactor quick reactor venting and venting and

cleaningcleaning

Reactive Ion Etching Reactive Ion Etching source designed to operate source designed to operate with a wide working pressure range (with a wide working pressure range (10 to 200 10 to 200 mTmT),),

The large cathode sizeThe large cathode size enables batch etching of up enables batch etching of up to three 3” wafers or up to one Ø150 mm wafer,to three 3” wafers or up to one Ø150 mm wafer,

ShuttlesShuttles for loading and to enable etching of for loading and to enable etching of different sizes and numbers of wafers,different sizes and numbers of wafers,

Helium assisted heat exchangeHelium assisted heat exchange between cathode, between cathode, shuttle with mechanical clamping to maintain shuttle with mechanical clamping to maintain shuttle temperature belowshuttle temperature below 50°C50°C during etching. during etching.

Reactor FeaturesReactor Features

LoadingLoading

CathodeCathode

Loading toolLoading tool ShuttleShuttle

LoadingLoading

Loading toolLoading tool

CathodeCathodeShuttleShuttle

ClampingClamping

Loading toolLoading tool

CathodeCathodeShuttleShuttle

CoolingCooling

Loading toolLoading tool

CathodeCathodeShuttleShuttle

HeliumHelium

EtchingEtching

Loading toolLoading tool

CathodeCathodeShuttleShuttle

HeliumHelium

PLASMAPLASMA

End of EtchingEnd of Etching

Loading toolLoading tool

CathodeCathodeShuttleShuttle

UnloadingUnloading

CathodeCathodeLoading toolLoading tool ShuttleShuttle

UnloadingUnloading

Loading toolLoading tool ShuttleShuttle

CathodeCathode

Aluminum etching requirementsAluminum etching requirements::

High etch rates and anisotropic profiles,High etch rates and anisotropic profiles,

Aluminium etch rate : 250 nm/min,Aluminium etch rate : 250 nm/min,

After the aluminium etching phase, a passivation step After the aluminium etching phase, a passivation step avoids corrosion due to AlCl3 trapped on the side walls avoids corrosion due to AlCl3 trapped on the side walls during aluminium etching,during aluminium etching,

No damage after a week long moisture exposure test at No damage after a week long moisture exposure test at atmospheric pressure.atmospheric pressure.

ALUMINUM ETCHINGALUMINUM ETCHING

Process SpecificationsProcess SpecificationsFor Aluminum EtchingFor Aluminum Etching

Guaranteed Process Guaranteed Process ResultsResults

PROCESSPROCESSEtch RateEtch Rate

(nm/min)(nm/min)

Uniformity Uniformity of Etch of Etch RateRate

SelectivitSelectivity against y against

PRPRProfileProfile

RIE of Al with RIE of Al with PR maskPR mask 250250 ±5%±5% 2.52.5 85° to 90°85° to 90°

RIE of RIE of Al/2%Cu with Al/2%Cu with

PR maskPR mask200200 ±5%±5% 22 85° to 90°85° to 90°

End of etching can be monitoredEnd of etching can be monitored using ausing a CCD camera with CCD camera with magnification > 120 Xmagnification > 120 X and a and a laser beam diameter ≤ 20 laser beam diameter ≤ 20 mm. The . The laser spot is located with a laser spot is located with a precise XY stageprecise XY stage on the area to etch. on the area to etch. When the substrate is exposed the system detects automatically When the substrate is exposed the system detects automatically the change in reflectivity.the change in reflectivity.

Precise MonitoringPrecise Monitoring

PhotodiodePhotodiode

Laser Endpoint DetectionLaser Endpoint Detection

Laser beamLaser beam

PhotoresistPhotoresist

QuartzQuartz

Reflected beamReflected beam

When laser beam reaches the substrate, the signal When laser beam reaches the substrate, the signal level drops. This change enables automatic endpoint level drops. This change enables automatic endpoint

detection.detection.

Trimming Specifications:Trimming Specifications:

Uniformity of etching on Uniformity of etching on 4” wafers ≤ ± 0,5%.4” wafers ≤ ± 0,5%.

Uniformity of shift in Uniformity of shift in frequency on packaged frequency on packaged devices: ≤ ± 5 KHz for a devices: ≤ ± 5 KHz for a 120 KHz. Shift.120 KHz. Shift.

TRIMMINGTRIMMING

QuickTime™ et undécompresseur TIFF (LZW)

sont requis pour visionner cette image.

Process accuracy:Process accuracy:

Low etch etch rate,Low etch etch rate,

Linear relationship Linear relationship between RF power and between RF power and etch rate.etch rate.

Reactive Ion EtchingReactive Ion Etching source which produces a uniform plasma source which produces a uniform plasma in a wide range of working pressure (10 to 200 mT) for fast in a wide range of working pressure (10 to 200 mT) for fast etching of Al and Al/2%Cu on up to etching of Al and Al/2%Cu on up to 150 mm wafers,150 mm wafers,

Helium assisted heat exchangeHelium assisted heat exchange to control to control shuttleshuttle temperature,temperature,

Al Plasma passivation step provided with the process,Al Plasma passivation step provided with the process,

Pumping system with Pumping system with gate valve gate valve forfor quick reactor quick reactor maintenancemaintenance,,

Laser endpointLaser endpoint with with high magnificationhigh magnification and and small laser spotsmall laser spot (25 µm) for precise process monitoring,(25 µm) for precise process monitoring,

Possibility of Possibility of SAW devices trimmingSAW devices trimming using a dedicated shuttle. using a dedicated shuttle.

Recap of Corial 200RL FeaturesRecap of Corial 200RL Features