Corial 200 COSMA Software with: Edit menu for process recipe edition, Adjust menu for process...

Corial 200Corial 200

COSMA Software withCOSMA Software with:: Edit menu for process recipe edition,Edit menu for process recipe edition,

Adjust menu for process optimizing,Adjust menu for process optimizing,

Maintenance menus for complete equipment Maintenance menus for complete equipment

control via internet with VPN (Virtual Private control via internet with VPN (Virtual Private

Network).Network).CORS Software forCORS Software for:: Data reprocessing (Measures and data Data reprocessing (Measures and data

comparison).comparison).

Equipment Control & SoftwareEquipment Control & Software

A Tool Organized in A Tool Organized in Successive LevelsSuccessive Levels

ActionActionss

ConstructorConstructor

LotsLotsActionsActions

ProcessProcess

Closed-loopClosed-loop

Server for Server for GUIGUI

COSMA COSMA SupervisorSupervisor

Embedded Embedded control PUcontrol PU

Embedded Embedded control control functionfunction

COSMA COSMA ControllerController

Process Process ControllerController

Device Device ControllersControllers

Physical Physical devicesdevices

OperatorOperator

Remote GUIRemote GUI

PC UserPC User

MonitorinMonitoringg



Diagram ModesDiagram Modes

Stand-byStand-byModeMode

Step by stepStep by step

ModeMode

ProductionProductionModeMode

OptimizationOptimizationModeMode

ConstructorConstructorModeMode

Shut downShut downModeMode

NormalNormal

ErrorsErrors

OperatorOperator

ProductionProduction

MaintenanceMaintenance

ConstructorConstructor

A Communicant ToolA Communicant Tool

COSMA COSMA SupervisorSupervisor

COSMACOSMAGUIGUI

Customer Customer Ethernet NetworkEthernet Network

Process Process Control Unit Control Unit

(1)(1)

Process Process Control Unit Control Unit

(2)(2)

Device Device Control (1)Control (1)

EthernetEthernet

Device Device Control (2)Control (2)

EthernetEthernet

WANWAN

VPNVPNADSLADSLFix IPFix IP

FirewalFirewalll

DedicatedDedicatedEthernet Ethernet networknetwork

SystemSystemReactorReactor

TMPTMP

RF GeneratorRF Generator

UHF GeneratorUHF Generator

Cathode LiftCathode Lift

Electronic ControlElectronic Control

TMP ControlTMP Control

MagnetronMagnetron

HT/B

T P

ow

er

Supplie

sH

T/B

T P

ow

er

Supplie

s

Wir

ing Inte

rface

Wir

ing Inte

rface

SystemSystem

TMPTMP

Throttle ValveThrottle Valve

Matching NetworkMatching NetworkLiftLift

IsolatorIsolator

MagnetronMagnetron

Gas boxGas box

Pumping SystemPumping System

Dry PumpDry PumpADP 122ADP 122

TMPTMP

TVTV

ReactorReactor

Gate valve for Gate valve for quick reactor quick reactor

ventingventing

New microwave (2.45 GHz) plasma New microwave (2.45 GHz) plasma source with source with hot walls to hot walls to reduce polymer condensation reduce polymer condensation and and to enhance plasma to enhance plasma cleaningcleaning. It produces High Density Plasma in a wide . It produces High Density Plasma in a wide working pressure range (working pressure range (10 to 100 mT10 to 100 mT) for ) for fast etchingfast etching of up of up to to Ø200 mm wafersØ200 mm wafers,,

Helium assisted heat exchangeHelium assisted heat exchange between cathode, shuttle and between cathode, shuttle and wafer or packaged die with mechanical clamping to maintain wafer or packaged die with mechanical clamping to maintain sample temperature belowsample temperature below 100°C100°C,,

Numerous plasma modes accessible in the same Numerous plasma modes accessible in the same process:process:

Microwave High Density Plasma + RF biasingMicrowave High Density Plasma + RF biasing

Reactive Ion EtchingReactive Ion Etching

Microwave High Density Plasma for silicon thinning.Microwave High Density Plasma for silicon thinning.

Reactor Features (1)Reactor Features (1)

Reactor with hot walls enables:Reactor with hot walls enables: Highly selective processes,Highly selective processes, Low contamination of the process chamber.Low contamination of the process chamber.

Very low plasma potential Very low plasma potential (< 2 Volts)(< 2 Volts) and and automatic self bias regulation giving rise to automatic self bias regulation giving rise to precise control of low ion energy levels precise control of low ion energy levels (< 15 (< 15 eV),eV),

Enable low damage etching,Enable low damage etching, Minimal sputtering of metal lines,Minimal sputtering of metal lines, Isotropic and anisotropic etching.Isotropic and anisotropic etching.

Reactor Features (2)Reactor Features (2)

Electron density : 10Electron density : 101111 to 10 to 101212 e/cme/cm33

PLASMAPLASMA

Magnetr

on

Magnetr

on

CouplingCoupling

DeviceDevice

High Density Plasma SourceHigh Density Plasma Source

Microwaves 2.45 GHzMicrowaves 2.45 GHz

HDP Reactor DesignHDP Reactor Design

Coupling deviceCoupling deviceReactorReactor

Laser windowLaser window

HDP Reactor DesignHDP Reactor Design

Coupling deviceCoupling deviceMicrowave cavityMicrowave cavity

Laser windowLaser window Gas shower Gas shower (Thermally isolated)(Thermally isolated)

Quartz tube and Quartz tube and shielding shielding (Thermally (Thermally isolated)isolated)

Reactor walls are Reactor walls are thermally isolatedthermally isolated. They are getting hot during . They are getting hot during etching. This enables selective etching of SiO2 against SiN, TiN and etching. This enables selective etching of SiO2 against SiN, TiN and polysilicon.polysilicon.

LoadingLoading

CathodeCathode

Loading toolLoading tool ShuttleShuttle

LoadingLoading

Loading toolLoading tool

CathodeCathodeShuttleShuttle

ClampingClamping



CoolingCooling



HeliumHelium

EtchingEtching



HeliumHelium

PLASMAPLASMA

End of EtchingEnd of Etching



UnloadingUnloading

CathodeCathodeLoading toolLoading tool ShuttleShuttle

UnloadingUnloading

Loading toolLoading tool ShuttleShuttle

CathodeCathode

Specifications : HDP + RF biasingSpecifications : HDP + RF biasing

ProcessProcess UnderlayerUnderlayer Etch RateEtch Rate(µm/min)(µm/min) SelectivitySelectivity

PolyimidePolyimide

Si3N4Si3N4

SiO2SiO2

SiO2 / TiN SiO2 / TiN (*)(*)(High selectivity)(High selectivity)

Si3N4Si3N4

SiO2SiO2

SiO2SiO2

TiNTiN

>50>50

33

11

>20>20

33

0.50.5

0.20.2

0.050.05

Some Process SpecificationsSome Process Specifications

(*) High selectivity requires temperature control of the sample to (*) High selectivity requires temperature control of the sample to etch.etch.

Control of sample temperature by He Control of sample temperature by He cooling: cooling:

Prevents metal lines lift-off,Prevents metal lines lift-off, Maintains electrical functionality.Maintains electrical functionality.


Helium Backside CoolingHelium Backside Cooling

PLASMAPLASMA

Pression He en fonction du débit- He Pressure Versus He Flow Rate -

0 5 10 15 20 2500

5

10

15

0

Débit He - He Flow Rate - (sccm)Débit He - He Flow Rate - (sccm)

Pre

ssio

n H

e (

Torr

s)Pre

ssio

n H

e (

Torr

s)-

He

Pre

ssure

-Pre

ssure

-

He Pressure vs He Flow RateHe Pressure vs He Flow Rate

Work AreaWork Area

GoalGoal:: Ensure wafer cooling Ensure wafer cooling

The The shuttles are designedshuttles are designed according to wafer size, the shape of according to wafer size, the shape of packaged dies packaged dies for optimum process resultsfor optimum process results. The use of . The use of dedicated shuttles according to sample to etch facilitates the dedicated shuttles according to sample to etch facilitates the use of the system.use of the system.

Altymid Altymid RingRing

WaferWafer

O’ RingO’ Ring

Base PlateBase Plate

Graphite PlateGraphite Plate

Example of ShuttleExample of Shuttle

Shuttle for Packaged DiesShuttle for Packaged Dies

Altymid RingAltymid Ring

Graphite CoverGraphite Cover

Packaged Die Bonded With Packaged Die Bonded With Vacuum Grease on Package Vacuum Grease on Package AdaptorAdaptor

O’ringO’ring

Base PlateBase Plate

GoalGoal:: Ensure packaged Ensure packageddie coolingdie cooling

He PressureHe Pressure > 80 Torrs > 80 Torrswith 25 sccm of He flowwith 25 sccm of He flowto ensure good cooling.to ensure good cooling.

The latest submicron technology needs precise delayering:The latest submicron technology needs precise delayering: Automatic endpoint detection,Automatic endpoint detection, CCD camera with magnification > 120 X,CCD camera with magnification > 120 X, Laser beam diameter ≤ 20 Laser beam diameter ≤ 20 m.m.

Preventing OveretchPreventing Overetch

A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

Interferences lead to a periodic signal having a Interferences lead to a periodic signal having a /2n period versus /2n period versus timetime

InterferencesInterferences

PhotodiodePhotodiode

Laser Endpoint DetectionLaser Endpoint Detection

Reflected beam Reflected beam 11

Interface 1Interface 1

UnderlayerUnderlayerInterface 2Interface 2 Refractive Index Refractive Index

= n= n

TimeTime

Sig

nal

Sig

nal

Laser beamLaser beam

Reflected beam Reflected beam 22

Laser Endpoint DetectionLaser Endpoint Detection

Al

Si3N4

SiO2

Si

Laser Laser beambeam

AlSiO2

Si



AlSiO2

Si

Al reflects the laser, there is no interference effect.

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