Corial 200MLCorial 200ML

COSMA Software withCOSMA Software with:: Edit menu for process recipe edition,Edit menu for process recipe edition,

Adjust menu for process optimizing,Adjust menu for process optimizing,

Maintenance menus for complete equipment Maintenance menus for complete equipment

control via internet with VPN (Virtual Private control via internet with VPN (Virtual Private

Network).Network).CORS Software forCORS Software for:: Data reprocessing (Measures and data Data reprocessing (Measures and data

comparison).comparison).

Equipment Control & SoftwareEquipment Control & Software

A Tool Organized in A Tool Organized in Successive LevelsSuccessive Levels

ActionActionss

ConstructorConstructor

LotsLotsActionsActions

ProcessProcess

Closed-loopClosed-loop

Server for Server for GUIGUI

COSMA COSMA SupervisorSupervisor

Embedded Embedded control PUcontrol PU

Embedded Embedded control control functionfunction

COSMA COSMA ControllerController

Process Process ControllerController

Device Device ControllersControllers

Physical Physical devicesdevices

OperatorOperator

Remote GUIRemote GUI

PC UserPC User

MonitorinMonitoringg

MonitorinMonitoringg

MonitorinMonitoringg

Diagram ModesDiagram Modes

Stand-byStand-byModeMode

Step by stepStep by step

ModeMode

ProductionProductionModeMode

OptimizationOptimizationModeMode

ConstructorConstructorModeMode

Shut downShut downModeMode

NormalNormal

ErrorsErrors

OperatorOperator

ProductionProduction

MaintenanceMaintenance

ConstructorConstructor

A Communicant ToolA Communicant Tool

COSMA COSMA SupervisorSupervisor

COSMACOSMAGUIGUI

Customer Customer Ethernet NetworkEthernet Network

Process Process Control Unit Control Unit

(1)(1)

Process Process Control Unit Control Unit

(2)(2)

Device Device Control (1)Control (1)

EthernetEthernet

Device Device Control (2)Control (2)

EthernetEthernet

WANWAN

VPNVPNADSLADSLFix IPFix IP

FirewalFirewalll

DedicatedDedicatedEthernet Ethernet networknetwork

SystemSystem

HT/B

T P

ow

er

Supp

lies

HT/B

T P

ow

er

Supp

lies

MagnetronMagnetron

Load-lockLoad-lock

RF GeneratorRF Generator

UHF GeneratorUHF Generator

ReactorReactor

Electronic ControlElectronic Control

TMP ControlTMP Control

IsolatorIsolator

SystemSystem

TMPTMP

Throttle ValveThrottle Valve

Matching NetworkMatching Network

LiftLift

IsolatorIsolator

MagnetronMagnetron

Gas boxGas box

Load-lockLoad-lock

Pumping SystemPumping System

TMPTMP

TVTV

ReactorReactor

Dry PumpDry PumpADP 122ADP 122

Load-L

ock

Valv

e

Load-lockLoad-lock

Gate valve for Gate valve for quick reactor quick reactor venting and venting and

cleaningcleaning

New microwave (2.45 GHz) plasma New microwave (2.45 GHz) plasma source with source with hot walls to hot walls to reduce polymer condensation reduce polymer condensation and and to enhance plasma to enhance plasma cleaningcleaning. It produces High Density Plasma in a wide . It produces High Density Plasma in a wide working pressure range (working pressure range (10 to 100 mT10 to 100 mT) for ) for fast etchingfast etching of up of up to to Ø200 mm wafersØ200 mm wafers,,

Helium assisted heat exchangeHelium assisted heat exchange between cathode, shuttle and between cathode, shuttle and wafer with mechanical clamping to maintain wafer wafer with mechanical clamping to maintain wafer temperature belowtemperature below 100°C100°C,,

Numerous plasma modes accessible in the same Numerous plasma modes accessible in the same process:process:

Microwave High Density Plasma + RF biasingMicrowave High Density Plasma + RF biasing

Reactive Ion EtchingReactive Ion Etching

Microwave High Density Plasma for ultra-soft etching.Microwave High Density Plasma for ultra-soft etching.

Reactor Features (1)Reactor Features (1)

Reactor with hot walls enables:Reactor with hot walls enables: Highly selective processes,Highly selective processes, Low contamination of the process chamber.Low contamination of the process chamber.

Very low plasma potential Very low plasma potential (< 2 Volts)(< 2 Volts) and and automatic self bias regulation giving rise to automatic self bias regulation giving rise to precise control of low ion energy levels precise control of low ion energy levels (< 15 eV),(< 15 eV),

No damage etching with no RF biasing,No damage etching with no RF biasing, Isotropic etching with low RF biasing,Isotropic etching with low RF biasing, Anisotropic etching with high RF biasing.Anisotropic etching with high RF biasing.

Reactor Features (2)Reactor Features (2)

Electron density : 10Electron density : 101111 to 10 to 101212 e/cme/cm33

PLASMAPLASMA

Magnetr

on

Magnetr

on

CouplingCoupling

DeviceDevice

High Density Plasma SourceHigh Density Plasma Source

Microwaves 2.45 GHzMicrowaves 2.45 GHz

HDP Reactor DesignHDP Reactor Design

Coupling deviceCoupling deviceReactorReactor

Laser windowLaser window

HDP Reactor DesignHDP Reactor Design

Coupling deviceCoupling deviceMicrowave cavityMicrowave cavity

Laser windowLaser window Gas shower Gas shower (Thermally isolated)(Thermally isolated)

Quartz tube and Quartz tube and shielding shielding (Thermally (Thermally isolated)isolated)

Reactor walls are Reactor walls are thermally isolatedthermally isolated. They are getting hot during etching. This . They are getting hot during etching. This reducesreduces the the polymer condensationpolymer condensation and the and the cross contaminationcross contamination between between different processes.different processes.

LoadingLoading

CathodeCathode

Loading toolLoading tool ShuttleShuttle

LoadingLoading

Loading toolLoading tool

CathodeCathodeShuttleShuttle

ClampingClamping

Loading toolLoading tool

CathodeCathodeShuttleShuttle

CoolingCooling

Loading toolLoading tool

CathodeCathodeShuttleShuttle

HeliumHelium

EtchingEtching

Loading toolLoading tool

CathodeCathodeShuttleShuttle

HeliumHelium

PLASMAPLASMA

End of EtchingEnd of Etching

Loading toolLoading tool

CathodeCathodeShuttleShuttle

UnloadingUnloading

CathodeCathodeLoading toolLoading tool ShuttleShuttle

UnloadingUnloading

Loading toolLoading tool ShuttleShuttle

CathodeCathode

Pression He en fonction du débit- He Pressure Versus He Flow Rate -

0 5 10 15 20 2500

5

10

15

0

Débit He - He Flow Rate - (sccm)Débit He - He Flow Rate - (sccm)

Pre

ssio

n H

e (

Torr

s)Pre

ssio

n H

e (

Torr

s)-

He

Pre

ssure

-Pre

ssure

-

He Pressure vs He Flow RateHe Pressure vs He Flow Rate

Work AreaWork Area

GoalGoal:: Ensure wafer cooling Ensure wafer cooling

The The shuttles are designedshuttles are designed according to wafer size, number of according to wafer size, number of wafers and process recipes wafers and process recipes for optimum process resultsfor optimum process results. The . The use of dedicated shuttles according to process strongly use of dedicated shuttles according to process strongly reduces reduces the cross contaminationthe cross contamination..

Altymid Altymid RingRing

WaferWafer

O’ RingO’ Ring

Base PlateBase Plate

Graphite PlateGraphite Plate

Example of ShuttleExample of Shuttle

The latest submicron technology needs precise monitoring:The latest submicron technology needs precise monitoring: Automatic endpoint detection,Automatic endpoint detection, CCD camera with magnification > 120 X,CCD camera with magnification > 120 X, Laser beam diameter ≤ 20 Laser beam diameter ≤ 20 m.m.

Precise MonitoringPrecise Monitoring

A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

Interferences lead to a periodic signal having a Interferences lead to a periodic signal having a /2n period versus /2n period versus timetime

InterferencesInterferences

PhotodiodePhotodiode

Laser Endpoint DetectionLaser Endpoint Detection

Reflected beam Reflected beam 11

Interface 1Interface 1

UnderlayerUnderlayerInterface 2Interface 2 Refractive Index Refractive Index

= n= n

TimeTime

Sig

nal

Sig

nal

Laser beamLaser beam

Reflected beam Reflected beam 22

New microwaveNew microwave source with source with hot walls hot walls whichwhich reduces polymer reduces polymer condensation, enhances plasma cleaning, minimizes cross condensation, enhances plasma cleaning, minimizes cross contaminationcontamination. It produces High Density Plasma for uniform . It produces High Density Plasma for uniform etching of films on batch of seven 2” wafers or wafer size up to etching of films on batch of seven 2” wafers or wafer size up to 200 mm200 mm,,

Very low plasma potentialVery low plasma potential (<2 Volts) and automatic self bias (<2 Volts) and automatic self bias regulation to regulation to precisely control the ion energyprecisely control the ion energy,,

Helium assisted heat exchangeHelium assisted heat exchange to maintain to maintain resist resist andand device device integrityintegrity,,

Various shuttles to reduce cross contamination.Various shuttles to reduce cross contamination. They are They are designed to fit with wafers and processes recipes for designed to fit with wafers and processes recipes for the best the best process resultsprocess results,,

Wide process rangeWide process range from isotropic to anisotropic and from isotropic to anisotropic and fast etch fast etch raterate to low etch rate with to low etch rate with very high selectivityvery high selectivity, ,

Laser endpointLaser endpoint for precise for precise process monitoringprocess monitoring,,

Capability of many etching modes from Capability of many etching modes from RIE, HDP + RIE and RIE, HDP + RIE and HDP in the same process recipeHDP in the same process recipe..

Recap of Corial 200ML FeaturesRecap of Corial 200ML Features