8/21/2019 CMF20120D

1/81 CMF20120D Rev.D

CMF20120D-Silicon Carbide Power MOSFET

Z-FETTMMOSFETN-Channel Enhancement Mode

Features

High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant

Benefts

Higher System Efciency Reduced Cooling Requirements

Increased System Switching Frequency

Applications

Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies UPS

Package

TO-247-3

Part Number Package

CMF20120D TO-247-3

VDS

1200 V

ID(MAX)

42 A

RDS(on)

80m

Maximum Ratings (TC= 25C unless otherwise specied)

Symbol Parameter Value Unit Test Conditions Note

ID Continuous Drain Current42

AVGS@20V, TC = 25C Fig. 10

24 VGS@20V, TC = 100C

IDpulse Pulsed Drain Current 90 APulse width tPlimited by Tjmax

TC = 25C

EAS Single Pulse Avalanche Energy 2.2 JID= 20A, VDD= 50 V,L = 9.5 mH

Fig. 15

EAR Repetitive Avalanche Energy 1.5 J tARlimited by Tjmax

IAR

Repetitive Avalanche Current 20 AID= 20A, VDD= 50 V, L = 3 mH

tARlimited by Tjmax

VGS Gate Source Voltage -5/+25 V

Ptot

Power Dissipation 215 W TC=25C Fig. 9

TJ, T

stgOperating Junction and Storage Temperature

-55 to+135

C

TL

Solder Temperature 260 C 1.6mm (0.063) from case for 10s

Md Mounting Torque1

8.8Nm

lbf-inM3 or 6-32 screw

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Electrical Characteristics (TC= 25C unless otherwise specied)

Symbol Parameter Min. Typ. Max. Unit Test Conditions Not

V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS =0V, ID= 100A

VGS(th)Gate Threshold Voltage

2.65 4V

VDS= VGS, ID= 1mA

Fig. 3.2 4.8 VDS= VGS, ID= 10mA

2.0V

VDS= VGS, ID= 1mA, TJ= 135C

2.45 VDS= VGS, ID= 10mA, TJ= 135C

IDSS Zero Gate Voltage Drain Current1 100

AVDS= 1200V, VGS= 0V

10 250 VDS= 1200V, VGS= 0V, TJ= 135C

IGSS Gate-Source Leakage Current 0.25 A VGS= 20V, VDS= 0V

RDS(on) Drain-Source On-State Resistance80 100

mVGS= 20V, ID= 20A

Fig. 395 120 VGS= 20V, ID= 20A, TJ= 135C

gfs Transconductance7.9

SVDS=20V, IDS=20A

Fig. 67.4 VDS=20V, IDS=20A, TJ= 135C

Ciss Input Capacitance 1915

pF

VGS= 0V

VDS= 800V

f = 1MHzVAC = 25mV

Fig. 1Coss Output Capacitance 120

Crss Reverse Transfer Capacitance 13

Eoss Coss Stored Energy 62 J Fig. 1

td(on)v Turn-On Delay Time 13

ns

VDD= 800V, VGS= 0/20V

ID= 20A

RG(ext)= 2.5, RL= 40

Timing relative to VDS

Fig. 1tfv Fall Time 24

td(off)v Turn-Off Delay Time 40

trv Rise Time 38

RG Internal Gate Resistance 5 f = 1MHz, VAC=

25mV

Built-in SiC Body Diode Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

VSD Diode Forward Voltage3.5

VVGS= -5V, IF=10A,TJ= 25C

3.1 VGS= -2V, IF=10A,TJ= 25C

trr Reverse Recovery Time 220 ns VGS= -5V, IF=20A,TJ= 25CVR= 800V,diF/dt= 100A/s

Fig. 22Qrr Reverse Recovery Charge 142 nC

Irrm Peak Reverse Recovery Current 2.3 A

Thermal Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Not

RJC Thermal Resistance from Junction to Case 0.44 0.51

K/W Fig. 7RCS Case to Sink, w/ Thermal Compound 0.25

RJA Thermal Resistance From Junction to Ambient 40

Gate Charge Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Not

Qgs Gate to Source Charge 23.8

nCVDD= 800V, VGS= 0/20VID =20APer JEDEC24 pg 27

Fig.12

Qgd Gate to Drain Charge 43.1

Qg Gate Charge Total 90.8

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0

50

100

150

200

250

0 10 20 30 40 50 60 70 80 90 100

RDS(on)(m)

ID (A)

VGS = 20 V

135oC

25oC

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 25 50 75 100 125 150

NormalizedRDS(on)

TJ (oC)

VGS = 20 V

0

20

40

60

80

100

120

0 1 2 3 4 5 6 7 8 9 10 11 12

ID(A)

VDS (V)

0

10

20

30

40

50

60

70

80

90

100

0 2 4 6 8 10 12 14 16 18 20

ID(A)

VDS (V)

Figure 2. Typical Output Characteristics TJ= 135C

Typical Performance

Figure 4. On-Resistance vs. Drain Current

Figure 6. Typical Transfer Characteristics

Figure 1. Typical Output Characteristics TJ= 25C

Figure 3. Normalized On-Resistance vs. Temperature

0

100

200

300

400

500

600

700

800

10 12 14 16 18 20

RDS(on)(m

)

VGS (V)

ID = 20 A25oC

135oC

0

10

20

30

40

50

0 2 4 6 8 10 12 14 16 18 20

ID(A)

VGS (V)

25oC

135o

C

Figure 5. On-Resistance vs. Gate Voltage

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4/84 CMF20120D Rev.D

Typical Performance

Figure 8. Safe Operating Area

Figure 11. Gate Threshold Voltage vs.Temperature

Figure 9. Power Dissipation Derating Curve

100E-6

1E-3

10E-3

100E-3

1

1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1

ZthJC

(oC/W)

tp (s)

0.5

0.3

0.1

0.05

0.02

0.01

SinglePulse

DC:

0.1

1

10

100

1 10 100 1000

ID(A)

VDS (V)

Limited

by RDS(on)

DC

tp 1 s

tp = 10s

tp = 100s

tp = 1 ms

tp = 10 ms

0

50

100

150

200

250

0 25 50 75 100 125 150

PD

(W)

TC (oC)

0

5

10

15

20

25

30

35

40

45

0 25 50 75 100 125 15

ID(A)

TC (oC)

Figure 7. Transient Thermal Impedance (Junction - Case)with Duty Cycle

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

-75 -50 -25 0 25 50 75 100 125 150

VGS(th)(V)

TJ (oC)

ID = 1 mA

ID = 10 mA

Figure 10. Continuous Current Derating Curve

-5

0

5

10

15

20

25

0 20 40 60 80 100

VGS

(V)

Gate Charge (nC)

ID = 20 A

VDD = 800 V

Figure 12. Typical Gate Charge Characteristics(25C)

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5/85 CMF20120D Rev.D

Typical Performance

Figure 13A and 13B. Typical Capacitances vs. Drain Voltage at VGS

= 0V and f = 1 MHz

Figure 16. Resistive Switching Times vs.External R

Gat V

DD= 400V, I

D= 20A

Figure 14. Typical COSS

Stored Energy

10

100

1000

10000

0 20 40 60 80 100 120 140 160 180 200

Capacitance(pF)

VDS (V)

Ciss

Coss

Crss

10

100

1000

10000

0 100 200 300 400 500 600 700 800

Capacitance(pF)

VDS (V)

Ciss

Coss

Crss

0

10

20

30

40

50

60

70

0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0

Eoss

(J)

VDS (V)

0

500

1000

1500

2000

2500

0

5

10

15

20

25

0 0.001 0.002 0.003 0.004 0.005 0.006

V

( V )

IDS

(A)

Time (s)

EAS = 2.20 J

IDS

VDS

0

20

40

60

80

100

120

140

0 5 10 15 20 25

Tim

e(nsec)

External Gate Resistor ()

tD(on)v

tfv

trv

tD(off)v

VGS = 0/20V

VDD = 400V

RL = 20

ID = 20 A

TA = 25oC

Figure 15. Typical Unclamped Inductive SwitchingWaveforms Showing Avalanche Capability

0

20

40

60

80

100

120

140

0 5 10 15 20 25

Time(nsec)

External Gate Resistor ()

tD(on)v

tfv

trv

tD(off)vVGS = 0/20V

VDD = 800V

RL = 40

ID = 20 A

TA = 25oC

Figure 17. Resistive Switching Times vs.External R

Gat V

DD= 800V, I

D= 20A

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6/86 CMF20120D Rev.D

Typical Performance

Figure 20. Clamped Inductive Switching Waveform TestCircuit

0

100

200

300

400

500

600

700

0 5 10 15 20

SwitchingEnergy(J)

Peak Drain Current (A)

ETOT,SW

EOFF

EON

VGS = 0/20V

RG = 7.5 Tot

VDD = 800V

L = 856H

FWD: C4D10120

TA = 25oC

0

100

200

300

400

500

600

700

800

900

1,000

0 25 50 75 100 125 150

SwitchingEnergy(J)

TJ (oC)

ETOT,SW

EON

EOFFVGS = 0/20V

RG = 11.8 Tot

VDD = 800V

L = 856H

FWD: C4D10120

ID = 20 A

Figure 21. Switching Test Waveforms for Transition times

Figure 18. Clamped Inductive Switching Energy vs.Drain Current (Fig. 20)

Figure 19. Clamped Inductive Switching Energy vs.Junction Temperature (Fig 20)

800V

+

- 42.3f

856H

CMF20120D

C4D10120D10A, 1200VSiC Schottky

90%

10%

VDS

VGS

ton toff

tfvtd(on)v td(off)v trv

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7/87 CMF20120D Rev.D

10% Irr

Vcc

trr

Irr

Ic

Vpk

tx

10% Vcc

Qrr=trr

id dttx

Diode ReverseRecovery Energy

Diode RecoveryWaveforms

Erec=t2

id dt

t1

t1 t2

Test Circuit Diagrams and Waveforms

Fig 22. Body Diode Recovery Test

800V42.3f

856H

CMF20120D

CMF20120D

+

-

Fig 23. Body Diode Recovery Waveform

FOR OFFICIAL USE ONLY Not Cleared for Open Release

EA= 1/2L x I

D2

Fig 24. Unclamped Inductive Switching Test Circuit Fig 25. Unclamped Inductive Switching waveformfor Avalanche Energy

ESD Test Total Devices Sampled Resulting Classifcation

ESD-HBM All Devices Passed 1000V 2 (>2000V)

ESD-MM All Devices Passed 400V C (>400V)

ESD-CDM All Devices Passed 1000V IV (>1000V)

ESD Ratings

8/21/2019 CMF20120D

8/88

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human bodynor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limitedto equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medicalequipment, aircraft navigation or communication or control systems, air trafc control systems, or weapons systems.

Copyright 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and theCree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc.

8 CMF20120D Rev.D

Cree, Inc4600 Silicon Drive

Durham, NC 27703USA Tel: +1.919.313.5300

Fax: +1.919.313.545www.cree.com/powe

Package Dimensions

Package TO-247-3

Recommended Solder Pad Layout

TO-247-3

(1)

(2)

(3)

POSInches Millimeters

Min Max Min Max

A .190 .205 4.83 5.21

A1 .090 .100 2.29 2.54

A2 .075 .085 1.91 2.16

b .042 .052 1.07 1.33

b1 .075 .095 1.91 2.41

b2 .075 .085 1.91 2.16

b3 .113 .133 2.87 3.38

b4 .113 .123 2.87 3.13

c .022 .027 0.55 0.68

D .819 .831 20.80 21.10

D1 .640 .695 16.25 17.65

D2 .037 .049 0.95 1.25

E .620 .635 15.75 16.13

E1 .516 .557 13.10 14.15

E2 .145 .201 3.68 5.10

E3 .039 .075 1.00 1.90

E4 .487 .529 12.38 13.43

e .214 BSC 5.44 BSC

N 3 3

L .780 .800 19.81 20.32

L1 .161 .173 4.10 4.40

P .138 .144 3.51 3.65

Q .216 .236 5.49 6.00

S .238 .248 6.04 6.30

Part Number Package Marking

CMF20120D TO-247-3 CMF20120