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Transcript of CMD201_ver_1_1_1214
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8/9/2019 CMD201_ver_1_1_1214
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Custom MMIC1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD201CMD201CMD201DC-20 GHz Distributed Power Amplifier
The CMD201 is wideband GaAs MMIC dis-tributed power amplifier die which operatesfrom DC to 20 GHz. The amplifier deliversgreater than 12 dB of gain with a correspond-ing output 1 dB compression point of +29 dBmand output IP3 of 38 dBm at 10 GHz. TheCMD201 is a 50 ohm matched design whicheliminates the need for RF port matching. TheCMD201 offers full passivation for increasedreliability and moisture protection.
Microwave radio and VSAT Telecom infrastructure Test instrumentation Military and space Fiber optics
Ultra wideband performance High linearity High output power Excellent return losses Small die size
Electrical Performance - V dd = 10.0 V, V gg1 = -0.55 V, V gg2 = 5.0 V , T A = 25 oC, F = 10 GHz
Features Applications
Description Functional Block Diagram
ver 1.1 1214
Parameter Min Typ Max Units
Frequency Range GHz
Gain 12 dB
Noise Figure 3.4 dBInput Return Loss 16 dB
Output Return Loss 17 dB
Output P1dB 29 dBm
Supply Current 400 mA
DC - 20
Let Performance Drive
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3 4
5
678
2
RFIN
RFOUT&Vdd
ACG1 ACG2
ACG4 ACG3
Vgg2
Vgg1
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Custom MMIC1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
Typical Performance
Broadband Performance, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V, I dd = 400 mA, T A = 25 oC
Narrow-band Performance, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V, I dd = 400 mA, T=25 oC
CMD201CMD201CMD201 DC-20 GHz Distributed Power Amplifier
-20
-15
-10
-5
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5
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Frequency/GHz
R e s p o n s e
/ d B
0
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N o i s e
F i g u r e
/ d B
S11
S22
S21
NF
-20
-15
-10
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Frequency/GHz
R e s p o n s e
/ d B
0
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i s e
F i g u r e
/ d B
S11
S22
S21
NF
ver 1.1 1214
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Custom MMIC1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
Gain vs. Temperature, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V
Typical Performance
Noise Figure vs. Temperature, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V
ver 1.1 1214
CMD201CMD201CMD201 DC-20 GHz Distributed Power Amplifier
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Frequency/GHz
N o i s e
F i g u r e
/ d B
+25C
+85C
-55C
0
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Frequency/GHz
G a i n
/ d B
+25C
+85C
-55C
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Custom MMIC1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
Output Power, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V, T A = 25 oC
Typical Performance
ver 1.1 1214
P1dB vs. Temperature, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V
CMD201CMD201CMD201 DC-20 GHz Distributed Power Amplifier
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Frequency/GHz
R e s p o n s e
/ d B m
P1dB
Psat
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Frequency/GHz
P 1 d B / d B m
+25C
+85C
-55C
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Custom MMIC1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
Output IP3 vs. Temperature, V dd = 10 V, V gg1 = -0.55 V, V gg2 = 5 V
Typical Performance
ver 1.1 1214
CMD201CMD201CMD201 DC-20 GHz Distributed Power Amplifier
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Frequency/GHz
O u
t p u t I P 3 / d B m
+25C
+85C
-55C
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Custom MMIC1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.1 1214
Die Outline (all dimensions in microns)
Notes:1. No connection required for unlabeled pads2. Backside is RF and DC ground3. Backside and bond pad metal: Gold4. Die is 85 microns thick5. DC bond pads are 100 microns square
Mechanical Information
CMD201CMD201CMD201 DC-20 GHz Distributed Power Amplifier
1
3 4
5
678
1781.00
2058.50
2185.50
2820.00
2
411.00
728.00
1384.00
1550.00
114.00
247.00
162.00
863.00
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Custom MMIC1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
Pad Diagram
Functional Description
Pad Description
ver 1.1 1214
CMD201CMD201CMD201 DC-20 GHz Distributed Power Amplifier
Pad Function Description Schematic
1 RF in 50 ohm matched input
2 Vgg2Power supply voltage
Decoupling and bypass caps required
3, 4 ACG1, 2 Low frequency termination. Attach bypasscapacitor per application circuit
5 RF out &VddPower supply voltage and 50 ohm matched
output
6, 7 ACG3, 4 Low frequency termination. Attach bypasscapacitor per application circuit
8 Vgg1 Power supply voltageDecoupling and bypass caps required
Backside Ground Connect to RF / DC groundGND
Vgg2
RF in
RF in
ACG3
ACG4
RF out & Vdd
ACG1
ACG2
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3 4
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Vgg1
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Custom MMIC1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
Assembly Guidelines
Assembly Diagram
ver 1.1 1214
Applications Information
The backside of the CMD201 is RF ground. Die attach should be accomplished with electrically andthermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly proceduresshould be followed for high frequency devices. The top surface of the semiconductor should be made
planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximityto the DC connections on chip.
RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Useof a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.The RF input and output require a double bond wire as shown.
The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet.Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handlewith care.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautionsshould be observed during handling, assembly and test.
CMD201CMD201CMD201 DC-20 GHz Distributed Power Amplifier
0.1 uF CAP TO GROUND
To Vgg1
0.1 uF CAP TO GROUND
100 pF CAP TO GROUND100 pF BYPASS CAP
0.1 uF BYPASS CAP
100 pF CAP TO GROUND
0.1 uF BYPASS CAP
100 pF BYPASS CAP
To Vgg2
To Vdd
RF out
RF in
(example: Presidio partMVB4080X104ZGK5R3L)
(example: Presidio partLSA1515B101M2H5R-L)
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Custom MMIC1 Park Drive Unit 12 Westford, MA 01886 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.1 1214
Applications Information
Application Circuit
The CMD201 is biased with a positive drain supply, a negative gate1 supply and a positive gate2 supply.Performance is optimized when the drain voltage is set to +10 V. The recommended gate1 and gate2voltages are -0.55 V and +5 V respectively.
Turn ON procedure:
1.Apply gate voltage V gg1 and set to -0.55 V2.Apply drain voltage V dd and set to +10 V
3.Apply gate voltage V gg2 and set to +5V
Turn OFF procedure:
1.Turn off gate voltage V gg2 2.Turn off drain voltage V dd 3.Turn off gate voltage V gg1
CMD201CMD201CMD201 DC-20 GHz Distributed Power Amplifier
Biasing and Operation
Note: Drain voltage (Vdd) must be applied through a broadband bias tee or external bias network.External DC block is required on RF input.
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3
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7
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RF in
Vgg1
0.1 uF
100 pF
0.1 uF 100 pF
5
Vdd
RF out
Vgg20.1 uF 100 pF
2
100 pF
6
0.1 uF