Chapter 8 Bipolar Junction Transistorsee130/sp06/chp8.pdf · Semiconductor Devices for Integrated...
Transcript of Chapter 8 Bipolar Junction Transistorsee130/sp06/chp8.pdf · Semiconductor Devices for Integrated...
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Slide 8-1Semiconductor Devices for Integrated Circuits (C. Hu)
Chapter 8 Bipolar Junction Transistors
• Since 1970, the high density and low-power advantage of the MOS technology steadily eroded the BJT’s early dominance.
• BJTs are still preferred in some high-frequency and analog applications because of their high transconductance and high speed.
Question: What is the meaning of “bipolar” ?
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Slide 8-2Semiconductor Devices for Integrated Circuits (C. Hu)
8.1 Introduction to the BJT
NPN BJT:
N+ P NE C
B
VBE VCB
Emitter Base Collector
-
-
Efn
Efp
VCB
VB E
Ec
Ev
Efn
VB E IC
0VCB
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Slide 8-3Semiconductor Devices for Integrated Circuits (C. Hu)
Common-Emitter ConfigurationQuestion: How does Ic vary with VBE ? VCB ?
Question: Why is IB often preferred as a parameter over VBE?
N+ P NE C
BIB
VB E
VCE
IC
(a)
IB IC
0 VCE
VB E IC
0VCE
(b)
(c)
Vcc
Vou t
Cloa dIB
(d)
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Slide 8-4Semiconductor Devices for Integrated Circuits (C. Hu)
8.2 Collector Current
BBB
B
DL
Ln
dxnd
τ≡
′=′
22
2
τB : recombination life timeDB : minority carrier (electron) diffusion
constant
Boundary conditions :
)1()0( /0 −=′ kTqV
BBEenn
0)1()( 0/
0 ≈−≈−=′ BkTqV
BB nenWn BC
N+ P Nemitter base collector
x0 WB
depletion layers
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Slide 8-5Semiconductor Devices for Integrated Circuits (C. Hu)
( )BB
B
B
kTqVB LW
LxW
enxn BE
/sinh
sinh)1()( /
0
−
−=′
)1( /2
−=
=
kTqV
B
iB
B
BE
BEC
BEeNn
WDqA
dxdnqDAI
)1( / −= kTqVSC
BEeII
∫≡
−=
B
BE
W
BiB
iB
kTqV
B
iEC
dxDp
nnG
eGqnAI
02
2
/2
)1(
It can be shown
GB (s·cm4) is the base Gummel number
8.2 Collector Current
ni2
NB------- e
qVBE kT⁄1–( )
x/x/WB
n′n′ 0( )-------------
)/1)(1(
)/1)(0()(
/2
BkTqV
B
iB
B
WxeNn
Wxnxn
BE −−=
−′=′
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Slide 8-6Semiconductor Devices for Integrated Circuits (C. Hu)
Inverse slope is 60 mV per decade, at low-level injection
High-level injection effect :p > NB , inverse slope is
kTqVC
BEeI 2/∝120mV/decade or
The IR drop across parasitic series resistance increases VBE at high IC and further flattens the curve.
Gummel Plot
0 0.2 0.4 0.6 0.8 1.010-12
10-10
10-8
10-6
10-4
10-2
VBE
I C(A
)
IkF
60 mV/decade
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Slide 8-7Semiconductor Devices for Integrated Circuits (C. Hu)
8.3 Base CurrentSome holes are injected from the P-type base into the N+ emitter.The holes are provided by the base current, IB .
emitter base collectorcontact
IE IC
electron flow –
+hole flow
IBpE' nB'
WE WB
(a)
(b)
contact
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Slide 8-8Semiconductor Devices for Integrated Circuits (C. Hu)
∫≡
−=
E
BE
W
EiE
iE
kTqV
E
iEB
dxDn
nnG
eGqnAI
02
2
/2
)1(
)1( /2
−= kTqV
EE
iEEEB
BEeNWnDqAI
Question: Is a large IB desirable? Why?
emitter base collectorcontact
IE IC
electron flow –
+hole flow
IB
contact
8.3 Base Current
For a uniform emitter,
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Slide 8-9Semiconductor Devices for Integrated Circuits (C. Hu)
8.4 Current Gain
B
CF I
I≡β
How can βF be maximized?
Common-emitter current gain, βF :
Common-base current gain:
F
F
BC
BC
CB
C
E
CF
EFC
IIII
III
II
II
ββα
α
+=
+=
+=≡
=
1/1/
It can be shown that F
FF α
αβ−
=1
2
2
iEBBE
iBEEB
B
EF nNWD
nNWDGG
==β
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Slide 8-10Semiconductor Devices for Integrated Circuits (C. Hu)
EXAMPLE: Current Gain
A BJT has IC = 1 mA and IB = 10 µA. What are IE, βF and αF?
Solution:
9901.0mA 01.1/mA 1/100µA 10/mA 1/
mA 01.1µA 10mA 1
=======+=+=
ECF
BCF
BCE
IIIIIII
αβ
We can confirm
F
FF β
βα+
=1 F
FF α
αβ−
=1
and
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Slide 8-11Semiconductor Devices for Integrated Circuits (C. Hu)
8.4.1 Emitter Bandgap Narrowing
2
2
iE
iB
B
E
nn
NN
∝βTo raise βF, NE is typically very large. Unfortunately, large NE makes 22
iiE nn >(called the heavy doping effect).
kTEVCi
geNNn /2 −= Since ni is related to Eg , this effect is also known as band-gap narrowing.
kTEiiE
gEenn /22 ∆= ∆EgE is negligible for NE < 1018 cm-3, is 50 meV at 1019cm-3, 95 meV at 1020cm-3,and 140 meV at 1021 cm-3.
Emitter bandgap narrowing makes it difficult to raise βF by doping the emitter very heavily.
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Slide 8-12Semiconductor Devices for Integrated Circuits (C. Hu)
2
2
iE
iB
B
E
nn
NN
∝β To further elevate βF , we can raise niB by using an epitaxial Si1-ηGeη base.
With η = 0.2, EgB is reduced by 0.1eV and niE2 by 30x.
8.4.2 Narrow-Bandgap (SiGe) Base
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Slide 8-13Semiconductor Devices for Integrated Circuits (C. Hu)
Assume DB = 3DE , WE = 3WB , NB = 1018 cm-3, and niB2 = ni
2. What is βF for (a) NE = 1019 cm-3, (b) NE = 1020 cm-3, and (c) NE = 1020 cm-3
and a SiGe base with ∆EgB = 60 meV ?
(a) At NE = 1019 cm-3, ∆EgE ≈ 50 meV,
(b) At NE = 1020 cm-3, ∆EgE ≈ 95 meV
(c)
292.12meV 26/meV 502/22 8.6 iiikTE
iiE nenenenn gE ==== ∆
138.610
109218
219
2
2
=⋅
⋅⋅=⋅=
i
i
iEB
iE
BE
EBF n
nnNnN
WDWDβ
22 38 iiE nn = 24=Fβ2meV 26/meV 602/22 10 ii
kTEiiB nenenn gB === ∆ 237=Fβ
EXAMPLE: Emitter Bandgap Narrowing and SiGe Base
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Slide 8-14Semiconductor Devices for Integrated Circuits (C. Hu)
A high-performance BJT typically has a layer of As-doped N+
poly-silicon film in the emitter.
βF is larger due to the large WE , mostly made of the N+ poly-silicon. (A deep diffused emitter junction tends to cause emitter-collector shorts.)
N-collector
P-base
SiO2
emitterN+-poly-Si
8.4.3 Poly-Silicon Emitter
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Slide 8-15Semiconductor Devices for Integrated Circuits (C. Hu)
Why does one want to operate BJTs at low IC and high IC?Why is βF a function of VBC in the right figure?
β F
From top to bottom:VBC = 2V, 1V, 0V
8.4.4 Gummel Plot and βF Fall-off at High and Low Ic
0.2 0.4 0.6 0.8 1.0 1.210-12
10-10
10-8
10-6
10-4
10-2
VBE
I C (A
)
βF
IB
IC
excess base current
high level injection in base
Hint: See Sec. 8.5 and Sec. 8.9.
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Slide 8-16Semiconductor Devices for Integrated Circuits (C. Hu)
8.5 Base-Width Modulation by Collector Voltage
Output resistance :
C
A
CE
C
IV
VIr =
∂∂
≡−1
0
A large VA (i.e. a larger ro ) is desirable for a large voltage gain
IB3IC
VCE0VA
VA : Early Voltage IB2
IB1
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Slide 8-17Semiconductor Devices for Integrated Circuits (C. Hu)
(Depletion region in collector is not shown)
How can we reduce the base-width modulation effect?
8.5 Base-Width Modulation by Collector Voltage
N+ P Nemitter base collector
VCE
CE
WB3
WB2
WB1
x
n'
reduction of base widthVCE1< VCE2<VCE3
BVBE
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Slide 8-18Semiconductor Devices for Integrated Circuits (C. Hu)
The base-width modulation effect is reduced if we
(A) Increase the base width,(B) Increase the base doping
concentration, NB , or(C) Decrease the collector doping
concentration, NC .
Which of the above is the most acceptable action?
8.5 Base-Width Modulation by Collector Voltage
N+ P Nemitter base collector
VCE
CE
WB3
WB2
WB1
x
n'
reduction of base widthVCE1< VCE 2<VCE 3
BVBE
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Slide 8-19Semiconductor Devices for Integrated Circuits (C. Hu)
8.6 Ebers-Moll Model
The Ebers-Moll model describes both the active and the saturation regions of BJT operation.
IB IC
0 VCE
saturationregion
active region
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Slide 8-20Semiconductor Devices for Integrated Circuits (C. Hu)
IC is driven by two two forces, VBE and VBC .
When only VBE is present :
)1(
)1(
/
/
−=
−=
kTqV
F
SB
kTqVSC
BE
BE
eII
eII
βNow reverse the roles of emitter and collector.When only VBC is present :
)1)(11(
)1(
)1(
/
/
/
−+−=−−=
−=
−=
kTqV
RSBEC
kTqV
R
SB
kTqVSE
BC
BC
BC
eIIII
eII
eII
β
β
βR : reverse current gainβF : forward current gain
8.6 Ebers-Moll Model
IC
VB CVB E
IB
E B C
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Slide 8-21Semiconductor Devices for Integrated Circuits (C. Hu)
)1()1(
)1)(11()1(
//
//
−+−=
−+−−=
kTqV
F
SkTqV
F
SB
kTqV
RS
kTqVSC
BCBE
BCBE
eIeII
eIeII
ββ
β
In general, both VBE and VBC are present :
In saturation, the BC junction becomes forward-biased, too.
VBC causes a lot of holes to be injected into the collector. This uses up much of IB. As a result, IC drops.
VCE (V)
8.6 Ebers-Moll Model
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Slide 8-22Semiconductor Devices for Integrated Circuits (C. Hu)
8.7 Transit Time and Charge Storage
C
FF I
Q≡τ
When the BE junction is forward-biased, excess holes are stored in the emitter, the base, and even in the depletion layers. QF is all the stored excess hole charge
τF determines the high-frequency limit of BJT operation.
τF is difficult to be predicted accurately but can be measured.
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Slide 8-23Semiconductor Devices for Integrated Circuits (C. Hu)
8.7.1 Base Charge Storage and Base Transit Time
Let’s analyze the excess hole charge and transit time in the base only.
B
BFB
C
FB
BEFB
DW
IQ
WnqAQ
2
2/)0(2
=≡
′=
τ
WB0
n ′ 0( )niB
2
NB------- e
qVBE kT⁄1–( )=
x
p' = n'
)1()0( /2
−=′ kTqV
B
iB BEeNnn
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Slide 8-24Semiconductor Devices for Integrated Circuits (C. Hu)
What is τFB if WB = 70 nm and DB = 10 cm2/s?
Answer:
2.5 ps is a very short time. Since light speed is 3×108 m/s, light travels only 1.5 mm in 5 ps.
EXAMPLE: Base Transit Time
ps 5.2s105.2/scm 102)cm 107(
212
2
262
=×=××
== −−
B
BFB D
Wτ
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Slide 8-25Semiconductor Devices for Integrated Circuits (C. Hu)
The base transit time can be reduced by building into the base a drift field that aids the flow of electrons. Two methods:
• Fixed EgB , NB decreases from emitter end to collector end.
• Fixed NB , EgB decreases from emitter end to collector end.-E B C
- BCdx
dE
q=
06730. Drift T
ransistor–Built-in B
ase FieldE
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Slide 8-26Semiconductor Devices for Integrated Circuits (C. Hu)
8.7.3 Emitter-to-Collector Transit Time and Kirk Effect
Top to bottom : VCE = 0.5V, 0.8V, 1.5V, 3V.
• To reduce the total transit time, the emitter as well as the depletion layers must be kept thin as well.
• Kirk effect or base widening: electron density in the collector (n = NC) is insufficient to support the collector current even if the electrons move at the saturation velocity-the base widens into the collector. Wider base means larger τF .
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Slide 8-27Semiconductor Devices for Integrated Circuits (C. Hu)
Base Widening at Large Ic
satEC qnvAI =
satE
CC
C
vAIqN
qnqN
−=
−=ρ
sdxd
ερ /=
x
−
baseNcollector
N+
collector
basewidth
depletionlayer
x
−
baseNcollector
N+
collector
“basewidth”
depletionlayer
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Slide 8-28Semiconductor Devices for Integrated Circuits (C. Hu)
8.8 Small-Signal Model
kTqVSC
BEeII /=
transconductance:
)//(
)(
/
/
qkTIeIkTq
eIdV
ddVdIg
CkTqV
S
kTqVS
BEBE
Cm
BE
BE
==
=≡
At 300 K, for example,gm=IC /26mV.
vbe rπ gmvbe
C
E
B
E
Cπ
+
−
)//( qkTIg Cm =
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Slide 8-29Semiconductor Devices for Integrated Circuits (C. Hu)
F
m
BE
C
FBE
B gdVdI
dVdI
r ββπ
===11
mFCFBEBE
F gIdV
ddVdQC ττπ ===
This is the charge-storage capacitance, better known as the diffusion capacitance.Add the depletion-layer capacitance, CdBE :
dBEmF CgC +=τπ
8.8 Small-Signal Model
vbe rπ gmvbe
C
E
B
E
Cπ
+
−
mF gr /βπ =
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Slide 8-30Semiconductor Devices for Integrated Circuits (C. Hu)
EXAMPLE: Small-Signal Model Parameters
A BJT is biased at IC = 1 mA and VCE = 3 V. βF=90, τF=5 ps, and T = 300 K. Find (a) gm , (b) rπ , (c) Cπ .
Solution:
(a)
(b)
(c)
siemens)(milliqkTIg Cm mS 39V
mA39mV 26
mA 1)//( ====
kΩ 3.2mS 39
90/ === mF gr βπ
ad)(femto fargC mF fF 19F109.1039.0105 1412 =×≈××== −−τπ
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Slide 8-31Semiconductor Devices for Integrated Circuits (C. Hu)
Once the model parameters have been determined, one can analyze circuits with arbitrary source and load impedance.
The parameters are routinely determined through comprehensivemeasurement of the BJT ACand DC characteristics.
vbe rπ gmvbe
C
E
B
E
Cπ
+
-
Signalsource
Load
vbe rπ gmvbe
C B
E
Cπ
+
−
ro CdBC
rb rc
re
Cµ
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Slide 8-32Semiconductor Devices for Integrated Circuits (C. Hu)
8.9 Cutoff Frequency
The load is a short circuit. The signal source is a current source,ib , at frequency, f. At what frequency does the current gain
fall to unity?)/( bc ii≡β
CdBEFF
m
b
c
bemc
bbbe
qIkTCjjCjrg
ii
vgiCjr
iiv
//11
/1)(
, /1admittanceinput
ωωτβωωβ
ω
ππ
ππ
++=
+==
=+
==
)/(21at 1
CdBEFT qIkTC
f+
==τπ
βvbe rπ gmvbe
C
E
B
E
Cπ
+
-
Signalsource
Load
dBEmF CgC +=τπ
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Slide 8-33Semiconductor Devices for Integrated Circuits (C. Hu)
fT is commonly used to compare the speed of a transistor.• Why does fT increase with increasing IC?• Why does fT fall at high IC?
fT ∝ 1/(τF + CdBEkT/qIC)8.9 Cutoff Frequency
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Slide 8-34Semiconductor Devices for Integrated Circuits (C. Hu)
• Poly-Si emitter• Thin base• Self-aligned poly-Si base contact• Narrow emitter opening• Lightly-doped collector• Heavily-doped epitaxial subcollector• Shallow trench and deep trench for electrical isolation
BJT Structure for Minimum Parasitics and High SpeedB E C
p+ p+P base
N collector
N+ subcollector
P− substrate
N+polySi
N+
Deeptrench
Deeptrench
Shallowtrench
P+polySiP+polySi
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Slide 8-35Semiconductor Devices for Integrated Circuits (C. Hu)
In order to sustain a constant excess hole charge in the transistor, holes must be supplied to the transistor through IBto replenish the holes lost to recombination at the above rate.What if IB is larger than ? FFFQ βτ/
FF
FB
F QtIdt
dQβτ
−= )(
Can find QF(t) for any given IB(t).
8.10 Charge Control Model
For the DC condition,FF
FFCB
QIIβτ
β == /
Can then find IC(t) through IC(t) = QF(t)/τF .
![Page 36: Chapter 8 Bipolar Junction Transistorsee130/sp06/chp8.pdf · Semiconductor Devices for Integrated Circuits (C. Hu) Slide 8-1 Chapter 8 Bipolar Junction Transistors • Since 1970,](https://reader036.fdocuments.net/reader036/viewer/2022062413/5be6063c09d3f28a428d2725/html5/thumbnails/36.jpg)
Slide 8-36Semiconductor Devices for Integrated Circuits (C. Hu)
EXAMPLE : Find IC(t) for a Step IB(t)
The solution of isFF
FB
F QtIdt
dQβτ
−= )(
)1(/)()(
)1(/
0
/0
FF
FF
tBFFFC
tBFFF
eItQtI
eIQβτ
βτ
βτ
βτ−
−
−==
−=
What is ?)( )?0( ?)( ∞∞ FFB QQI
IB(t)
IC(t)
IC(t)
t
t
IB IB0
E B Cn
t
QF
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Slide 8-37Semiconductor Devices for Integrated Circuits (C. Hu)
Visualization of QF(t)
FF
FB
F QtIdt
dQβτ
−= )(
QF (t)
QF/τFβF
IB( t)
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Slide 8-38Semiconductor Devices for Integrated Circuits (C. Hu)
8.11 Model for Large-Signal Circuit Simulation
• Model contains dozens of parameters, mostly determined from measured BJT data.
• Circuits containing tens of thousands of transistors can be simulated.
• Compact model is a “contract” between device/manufacturing engineers and circuit designers.
)1(1)( /// −−
+−′= kTqV
F
S
A
CBkTqVkTqVSC
BCBCBE eIVVeeII
β
C
B
E
QF
CCS
rB
rC
rE
CBE
QRCBC IC
![Page 39: Chapter 8 Bipolar Junction Transistorsee130/sp06/chp8.pdf · Semiconductor Devices for Integrated Circuits (C. Hu) Slide 8-1 Chapter 8 Bipolar Junction Transistors • Since 1970,](https://reader036.fdocuments.net/reader036/viewer/2022062413/5be6063c09d3f28a428d2725/html5/thumbnails/39.jpg)
Slide 8-39Semiconductor Devices for Integrated Circuits (C. Hu)
A commonly used BJT circuit simulation model is theGummel-Poon model, consisting of
• Ebers-Moll model (two diodes and two driving forces for IC)• Enhancements for high-level injection and Early effect• Voltage-dependent capacitances representing charge storage• Parasitic resistances
8.11 Model for Large-Signal Circuit Simulation
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Slide 8-40Semiconductor Devices for Integrated Circuits (C. Hu)
8.12 Chapter Summary• The base-emitter junction is usually forward-biased while
the base-collector is reverse-biased. VBE determines the collector current, IC .
∫≡
−=
B
BE
W
BiB
iB
kTqV
B
iEC
dxDp
nnG
eGqnAI
02
2
/2
)1(
• GB is the base Gummel number, which represents all the subtleties of BJT design that affect IC.
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Slide 8-41Semiconductor Devices for Integrated Circuits (C. Hu)
8.12 Chapter Summary• The base (input) current, IB , is related to IC by the
common-emitter current gain, βF . This can be related to the common-base current gain, αF .
B
E
B
CF G
GII
≈=β
• The Gummel plot shows that βF falls off in the high ICregion due to high-level injection in the base. It also falls off in the low IC region due to excess base current.
F
F
E
CF I
Iβ
βα+
==1
• Base-width modulation by VCB results in a significant slope of the IC vs. VCE curve in the active region (known as the Early effect).
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Slide 8-42Semiconductor Devices for Integrated Circuits (C. Hu)
8.12 Chapter Summary• Due to the forward bias VBE , a BJT stores a certain amount
of excess carrier charge QF which is proportional to IC.
FCF IQ τ≡
τF is the forward transit time. If no excess carriers are stored outside the base, then
• The charge-control model first calculates QF(t) from IB(t) and then calculates IC(t).
B
BFBF D
W2
2
==ττ
FF
FB
F QtIdt
dQβτ
−= )(
FFC tQtI τ/)()( =
, the base transit time.
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Slide 8-43Semiconductor Devices for Integrated Circuits (C. Hu)
8.12 Chapter Summary
The small-signal models employ parameters such as transconductance,
qkTI
dVdIg C
BE
Cm /=≡
input capacitance,
and input resistance.
mFBE
F gdVdQC τπ ==
mFB
BE gdI
dVr /βπ ==