Chapter 6-1 Applications of Phosphorsocw.nctu.edu.tw/course/ch-inorganic-phosphors/2010chap6... ·...

Chapter 6-1 Applications of Phosphors

1 Phosphors for Lighting 照明用螢光體

(a) Lamp phosphors ndash Fluorescent lamps (FL) High Pressure Hg Lamps

(b) Phosphors for White-Light LED (Light Emitting Diodes) 白光LED用螢光體

2 Phosphors for Cathode Ray Tube (CRT) 陰極射線管螢光體2 Phosphors for Cathode Ray Tube (CRT) 陰極射線管螢光體

3 Phosphors for Field Emission Displays (FED)場發射顯示螢光體

4 Phosphors for Electroluminescent (EL) Displays 電激發光螢光體

5 Phosphors for Plasma Displays Panels (PDP) 電漿顯示螢光體p p y ( )

6 X-ray Phosphors X-光螢光體

(a) Conventional intensifying screens (Blasse Chap 8 Fig 8 2)(a) Conventional intensifying screens (Blasse Chap 8 Fig 82)

(b) Photostimulable storage phosphor (PSP) screens BaFClEu2+

(c) Other X-ray phosphors Ba5SiO4Br6Eu2+ Y2SiO5Ce3+

1

Phosphor Materials and Their Applications in Lighting and Displays

2(Shionoya amp Yen Phosphor Handbook (CRC Press 1999) Chap 1 p 7

(Shionoya amp Yen Phosphor Handbook (CRC Press 1999) Chap 1 p 7

3

二十一世紀全世界能源之對策

Phosphors for Fluorescent Lamp 螢光燈用螢光粉p p

1Phosphors for Lighting 照明用螢光體1Phosphors for Lighting 照明用螢光體(a) Lamp phosphors ndash Fluorescent lamps High Pressure Hg Lamps

(b) Phosphors for White-Light LED (Light Emitting Diodes) 白光LED用螢光體(b) Phosphors for White Light LED (Light Emitting Diodes) 白光LED用螢光體

5

台灣螢光材料產業之概況

1987 日本Nichia化學與中國電器台灣日光燈合資成立日亞連合照明

(NICHIA-UNILUX CORPORATION )生產照明用螢光粉迄今該公司

已取得國內日光燈螢光粉90以上的市塲

- 當時國內CRT映像管生產者為中華映管(CPT)台灣飛利普電子

台灣克林登

- 國內日光燈生產者為中國電器台灣日光燈協成電器順彥電

器新亞電器與水銀燈台灣岩崎等廠商

1990 連合照明接受CPT委託回收CRT映像管螢光體CRT螢光體仍由國

外進口

1990-1992 工研院評估螢光體產業之應用與市塲

2001 高雄南帝化工公司投資量產白光LED用螢光粉

62004 台灣道爾科技 (Dott Tech) ndash 各式LED用或customer order螢光粉

日本螢光體產業概況

研究始於二次大戰之前戰後在影像管與日光燈產業居世界領導地位研究始於二次大戰之前戰後在影像管與日光燈產業居世界領導地位

1985前 CRT管佔全球70 近年來高解析CRT管佔全球90

國內螢光粉生產體系極為健全對新材料之開發不遺餘力目前全日本國內螢光粉生產體系極為健全對新材料之開發不遺餘力目前全日本

螢光粉生產量占全世界一半以上

精於螢光粉製造如日亞化學Ni hi Ch i l 化成K i 精於螢光粉製造如日亞化學Nichia Chemicals 化成Kasei

Optonix 東芝日本電氣(NEC)豐田合成Osram Melco 與美國

與荷蘭飛利浦齊名GE RCA與荷蘭飛利浦齊名

近年來日亞化學已取得全球領先地位1990收購美國RCA成立日亞美國

廠1987在台灣成立連合照明生產照明用螢光材料

近年來日亞化學螢光體之世界佔有率已達40-50而GE與Philips之市

7佔率則逐漸衰退中

1938年美國GE公司發明螢光燈 (FL fluorescent lamps)

技術發展方向 1)發光效率之提昇 (luminescence efficiency enhancement

2) 長壽命化 (long life)2) 長壽命化 (long life)

3) 尺寸製密化 (size compactness)

基本要求 1) 演色性 (color rendering property CRI or Ra)

2) 光色品質改良

Ca5(PO4)3XSbMn2+ (1942年發明) 發光光譜缺乏紅色光所照射之物體呈現不自然之缺陷

三波長光譜 450 nm (Blue)高演色性三波長型 R = 84(人眼最敏感波長) 540 nm (Green)

610 nm (Red)

高演色性三波長型 Ra = 84

8五波長型燈粉(Toshiba Matsushita)添加藍綠與深紅螢光粉 Ra = 88色彩更自然

類型色溫 (K) 年代

N-型晝白色 5000

型晝白色D-型晝白色 6700 1986

接近太陽光 7500 1989

色溫 (color temperature) 表示白色光之尺度單位 oK色溫 (color temperature) 表示白色光之尺度單位 oK

日光燈中充填水銀原子及氬氣在185254365 nm等波長之紫外光照射下以激發螢光體若充填He及Xe混合氣則可以真空紫外波段147 nm加以激發(plasma display panel PDP原理)PDP原理)

日光燈在要求高效率能源利用與高演色性條件下目前

9

日光燈在要求高效率能源利用與高演色性條件下目前開發三波長日光燈最能滿足消費者之需求

10

Construction of A Fluorescent Lamp

1 汞氣與氬氣管內氣壓= 0 1 atm最佳氬氣之加入在於首次低壓導電流1汞氣與氬氣管內氣壓= 01 atm最佳氬氣之加入在於首次低壓導電流

2 啟動器使陰極受熱再迅速關閉利用抗流線圈的高壓湧浪(HP surge)產生放電

3安定器(限流器-鐵心抗流線圈)與啟動器配合在日光燈開關啟動時由感應3安定器(限流器鐵心抗流線圈)與啟動器配合在日光燈開關啟動時由感應

產生一高壓湧浪使燈管放電而發光之後再限制電流大小

加熱絲極陽(陰)極

快速啟動器

穩壓安定鎮流器

11

省電螢光燈特殊用途螢光燈

12

FL phosphors apatite structure Ca5(FCl)(PO4)3SbMn

FL lamps (螢光燈)FL lamps (螢光燈)Low pressure Hg discharge lamp with a layer of phosphor particles on the inside surface 1-2 torr pressure containing Ne Ar Kr gases產生85 2537 nm 15 (185 315 365 430 nm)nm 15 (185 315 365 430 nm)

- high energy efficiency for 254 nm high photon excitation efficiency

改變SbMn量可以調度emission colors bluish-white reddish white

常用之phosphor lighting coating 為blends常用之phosphor lighting coating 為blends

13

日光燈用螢光體

3(BaMg)Obull8Al2O3Eu2+

(SrCaBa)10(PO4)6Cl2Eu2+

2SrObull084P2O5bull016(BaMg)Obull8Al2O3Eu2+ S O 0 8 2O5 0 6( a g)O 8 2O3 u+


3(BaMg)O8Al2O3Eu2+Mn2+

Sr4Al14O25Eu2+

SrAl O Eu2+SrAl2O4Eu2+

(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+

35MgObull05MgF2bullGeO2Mn4+

(GdCeTb)MgB5O10Mn4+

Ca5(PO4)3(FCl)SbMn3Ca3(PO4)2Ca(FCl)2SbMn

3Ca (PO ) Ca(F Cl) Sb3Ca3(PO4)2Ca(FCl)2Sb MgWO4

(BaCaMg)10(PO4)6Cl2Eu2+

2SrO 0 84P2O5 0 16B2O3Eu2+


2SrO 084P2O5 016B2O3EuSr4Al14O25Eu2+

1 Phosphors for Lighting ApplicationsSuspension of phosphor powder particles

MgWO4 1000MgCO3 + WO3 MgWO4

1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn

CaCO3 + CaHPO4 + CaF2 +NH4Cl + Sb2O3 + MnCO3

V hi h li h

Ca5(FCl)(PO4)3SbMn

Very high light output

若要製備high efficiency 材料須要求clean production process high quality starting materials

- Controlled atmosphere (Eu2+ versus Eu3+)

S i hi f h l i- Stoichiometry of host lattice

- Particle size controlled (small particles tend to have large specific surface area)

15Coprecipitation process (共沈法製程)若Host 與activator cations are chemically similar則可考慮本技術

共沉法製程

Example Y3+ + Eu3+Oxalate coprecipitation

(YEu) oxalate

Y O EuHeat treatment

Y2O3Eu

Phosphors tend to degrade slowly during lamp life cyclePhosphors tend to degrade slowly during lamp life cycle

原因 1 由波長185 nm輻射所造成的photochemical decomposition

2 Reaction with excited Hg from discharge2 Reaction with excited Hg from discharge

3 Diffusion of Na+ from the glass

通常小粒徑高比面積造成螢光體對光或汞蒸氣更加敏感

16

Lamp Phosphors for Lighting

Earthly phosphors (1938 1948)Earthly phosphors (1938-1948)

MgWO4 (ZnBe)2SiO4Mn2+ 缺點Mn2+ + Hg rarr 分解uv

MgWO4CaWO4Bluish white emission

λem = 480 nm

(Zn Be)2SiO4Mn2+

Covering green to red part of the Visible spectrum

(ZnBe)2SiO4MnZn2SiO4Mn2+

of the Visible spectrum反射光譜

(Blasse amp Grabmeier (1994) Chap 6)

17

Chap 6)

17

MgWO4

1 100 ti t t ti h WO 2 ( t h d l) i bl t1 100 activator concentration each WO42- group (octahedral) is able to luminescence hellip

2 No concentration quenching (large Stokes shift) q g ( g )

3 Charge transfer luminescence mechanism in WO42- group

Zn SiO Mn2+Zn2SiO4Mn2

Emission due to Zn2SiO4Mn2+ is narrow

1 Zn2SiO4 Be2SiO4 are isostructural both Zn2+ Be2+ are in tetrahedral1 Zn2SiO4 Be2SiO4 are isostructural both Zn Be are in tetrahedral coordination (Mn2+ in tet Coordination)

Mn2+ (d5) all optical transitions within 3d5 configurations

均為spin- and parity-forbidden transitions

2 In (Zn Be)2SiO4 the crystal field of Mn2+ ion varies2 In (ZnBe)2SiO4 the crystal field of Mn ion varies

The emission band broadens relative to that of Zn2SiO4Mn2+

Introduction of Be2+ increases crystal field strength of Mn2+ ion emission

18

Introduction of Be increases crystal field strength of Mn ion emission shifted to longer wavelength

2 In (ZnBe)2SiO4 the crystal field of Mn2+ ion varies


Introduction of Be2+ increases CF of Mn2+ ion emission shifted to

longer wavelength

(ZnBe)2SiO4Mn2+Zn2SiO4Mn2+

Zn2SiO4Mn2+2 4反射光譜

1919

商業用螢光燈粉

20

常見日光燈用螢光材料(燈粉)組成 (254 nm)常見日光燈用螢光材料(燈粉)組成 (254 nm)

色紫外光紅光綠光(QE) 藍光(QE) 三波長色光

紫外光(發射波長)

紅光綠光(QE) 藍光(QE) 三波長

Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)

Sr4Al14O25Eu2+(Blue 490 nm 90)GdMgB5O10Ce3+Mn2+

(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+

( )GdMgB5O10Tb3+ (green)

(Ce02Gd06Tb02)(Mg09Mn0 1)B5O10 (Blue + Green2 5

(350 nm)

SrB4O7Eu2+

(370 nm)

MgB5O10 (88) Sr2P2O7Eu2+

(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21

Emission spectra of Ca5(FCl)(PO4)3 as a function of MnSb(PO4) ratio (a) 00156(藍白) (b) 0080086(日光白) (c) 0170086(冷白) and (d) ( ) ( ) ( ) ( ) ( ) ( ) ( )0240086(暖白)

Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22

Excitation spectra of Ca5(FCl)(PO4)3 monitored at Sb3+ emission wavelength (detector set at 476 nm) and (b) Mn2+ emission g ( ) ( )wavelength (detector set at 590nm)

最佳激發波長

23

Phosphors for Tricolor Lamps

Year Phosphors

1960 Ca5(PO4)3ClSb3+Mn2+ (white)

1974 BaMg2Al16O27Eu2+ CeMgAl10O19Tb3+ Y2O3Eu3+

1990 BaMgAl O Eu2+ (B) (La Ce)PO Tb3+ Y O Eu3+1990 BaMgAl10O17Eu2+ (B) (SrCa)5(PO4)3ClEu2+

(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+

2005 BaMgAl10O17Eu2+ (B) (LaCe)PO4Tb3+ Y2O3Eu3+

24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+

S Al O E 2+色溫4000K

BaMgAl10O17Eu2+Sr2Al6O11Eu2+

(magnetoplumbite-type)

25 25


Keodam and Opstelten

A luminescent lamp with an efficacy(功效) of 100 lmW and CRI ofA luminescent lamp with an efficacy(功效) of 100 lmW and CRI of 80-85 can be obtained by combining three phosphors which emit in narrow λ intervals centered at 450 550 and 610 nm

色溫4000K三波長螢光燈燈粉發射光譜

26

A lamp containing a mixture of Sr2Al6O11Eu2+ GdMgB5O10Ce3+Tb3+ Mn2+

and Ca5(PO4)3(FCl)SbMn has a CRI of 95 and an efficacy of 65 lmW

色溫為4000K之deluxe lamp

Can be suppressed by adding yellow-

3emittingYAGCe3+

27 26

500

400

PL Electronic Helix 20WDY2O3Eu3+ SrAl12O19Mn2+

(cps

)

300

Ca (PO ) FSb3+LaPO Tb3+Y O Eu3+

Inte

nsity

(

200

M-廠 FL40D Ca5(PO4)3FSb3+LaPO4Tb3+Y2O3Eu3+

100

GE Lighting FL40D Ca5(PO4)3FSb3+Y2O3Eu3+ LaPO4Tb3+

0

Nichia Lamp NP-96 LaPO4Tb3+(BaSrCa)5(PO4)3FSb3+Y2O3Eu3+

Operations Y Scale Add 200 | Import2 - File 2raw - Type 2ThTh locked - Start 10000 - End 80000 - Step 0100 - Step time 04 s - Temp 25 (Room) - Time Started 14 s - 2-Theta 10000 - Theta 5000 - Chi 000 - Phi 000 - X Operations Y Scale Add 300 | Import1 - File 1raw - Type 2ThTh locked - Start 10000 - End 80000 - Step 0100 - Step time 04 s - Temp 25 (Room) - Time Started 13 s - 2-Theta 10000 - Theta 5000 - Chi 000 - Phi 000 - X

2-Theta - Scale10 20 30 40 50 60 70 8

Comparison of XRD profiles for fluorescent lamp phosphors from

28Operations Import4 - File 4raw - Type 2ThTh locked - Start 10000 - End 80000 - Step 0100 - Step time 04 s - Temp 25 (Room) - Time Started 14 s - 2-Theta 10000 - Theta 5000 - Chi 000 - Phi 000 - X Operations Y Scale Add 100 | Import3 - File 3raw - Type 2ThTh locked - Start 10000 - End 80000 - Step 0100 - Step time 04 s - Temp 25 (Room) - Time Started 14 s - 2-Theta 10000 - Theta 5000 - Chi 000 - Phi 000 - X

different sources

25

Red phosphors for tricolor lamps

It has been estimated that 5 ppm of Fe lowers the efficiency of Y2O3Eu by 7

J = 2 dominates because of hypersensitivity

Dominating ndash a hypersensitive forced electric dipole emissionelectric dipole emission Eu3+ occupies a lattice site without a inversion symmetry

5D0 rarr 7FJ

29 27

Red phosphors for tricolor lamps實際上中提供兩種供 3 取代並具有與點對稱之格位實際上Y2O3中提供兩種供Eu3+取代並具有與點對稱之格位S6 C2

Eu3+ on S6 site only shows the 5D0-7F1

The unwanted 5D0-7F1 emission of the S6 site is suppressed in the commercial 3 Eu3+Eu on S6 site only shows the D0- F1

magnetic-dipole emission (595 nm)

τe = 8 msec

suppressed in the commercial 3 Eu3

samples due to energy transfer from Eu3+ (S6) to Eu3+ (C2) rc = 8 Aring

C2 sites are 3 times more than S6

τe = 11 msec

S6 C2

30

Blue phosphors for Tricolor LampsHighest lamp output is expected for a B-emitting phosphor with an emission max at 450 nm the best CRI is found with an emission max at 480 nm

基於對兩者之要求 only phosphors with emission (max) 440-460 nm are of interest

B M Al O E 2+BaMgAl10O17Eu2+


Ca5(PO4)3(ClF) SbMn(halophosphate)

Sr2Al6O11Eu2+

QE = 90

31

Blue phosphors for tricolor lamps

Built up of alternating l f AlO h dlayer of AlO4-tetrahedra and of AlO6-octahedra

32

Green phosphors for Tricolor Lamps (mainly Tb3+)Green phosphors for Tricolor Lamps (mainly Tb )

1 First allowed transition is 4f8 rarr 4f75d1 and it often lies too high energy to make 254 nm excitation effective A sensitizer (Ce3+ 4frarr 5d is situated at lower energy than the ( gyTb3+ 4f8 rarr 4f75d1) must be used to absorb the 254 nm radiation effectively

2 CeMgAl11O19 magnetoplumbite (1-12-19) structure

GdMgAl5O10 structure consists of a 2-D framework of BO3 and BO4groups in which Mg2+ are in oct coordination and Gd3+ in ten-coordination The Gd3+ polyhedra form isolated zig-zag chains d(Gd-Gd) = 4 AringThe Gd polyhedra form isolated zig zag chains d(Gd Gd) 4 Aring

33

1 some UV emission originating from Ce3+ and Gd3+ is present

2 The energy transfer mechanisms are different

CeMgAl11O19Tb330

3 CeMgAl11O19Tb has first excitation max at 270 nm Stokes shift is large CeMgAl11O19Tb

(Ce Gd)MgB O Tb

約 8000 cm-1 energy transfer between Ce3+

does not occur and i hi (CeGd)MgB5O10Tbconcentration quenching

is absent

3 3 (LaCe)PO4Tb4 The Ce3+rarr Tb3+

transfer is one-step process Transfer is

t i t d t i hbrestricted to neighbors high concentration of Tb3+ ( gtgt 33) is necessary to quench

34

necessary to quench the Ce3+ emission

(LaCe)PO4Tb = LaPO4 CeTb

- Stokes of the emission is small (約6000 cm-1) emission of CePO4 is partly- Stokes of the emission is small (約6000 cm ) emission of CePO4 is partly concentration quenched

- energy migration over the Ce3+ assists in transfer to Tb3+

- the UV output is high (due to the fact that Ce3+-Ce3+ transfer more efficient than Ce3+-Tb3+ transfer rate 1011 sec-1 versus 3 x 108 sec-1 at the shortest internuclear rare-earth distance))

GdMgB5O10CeTb

- excitation with 254 nm occurs in the Ce3+ which transfers its energy to Gd3+ all of Ce3+ exc energy is transferred to Gd3+ Then the energy migrated over to the Gd3+ sublattice (次晶格) It is trapped by the emittingmigrated over to the Gd3 sublattice (次晶格) It is trapped by the emitting Tb3+ ions

35

不同Ce3+rarrTb3+能量轉移機制之比較不同Ce rarrTb 能量轉移機制之比較

36

- The eye sensitivity curve drops sharply in the red spectral area

- The 5D1 emission of Eu3+ should be quenched by cross relaxation as in the lamp phosphors

- The high value of lumen equiv of Y2O3Eu and Y2(WO4)3Eu3+ are due to 5D0-7F4

Eye-sensitivitylamp phosphors

(ZnCd)SAg低流明當量

Eu3+

5D0-7F4 tend to d l idecrease lumen eqiv

37

Phosphors for HPMV (High Pressure Mercury Vapor) Lamp

高壓水銀燈用螢光粉 - 街道照明的主力

250-300

700-800

38

HPMV Lamps

-Internal pressure of the lamp ranging from a few mm to several atmospheres gtgt 760 mm Hg a quartz envelope is employed for high pressure operation

Th b f lli i d b t H t i-The number of collision per second between Hg atoms increases enormously in the discharge

-This has the effect of shifting the resonance of radiation to longer wavelengths including the visible 430 nm 546 nm and 5785 nm resulting in a green white emitting lamp Thus a red emittingresulting in a green-white emitting lamp Thus a red-emitting phosphor is needed so as to correct for the lack of red emission

- Considerable amount of 365 nm is also present

- The HPMV lamp has been used extensively in street-lighting (街道照明) li ti

39

(街道照明)applications

Phosphors for HPMV Lamps (高壓水銀燈用螢光粉)

螢光粉化學組成 YVO4Eu YVO4Dy and (SrMg)3(PO4)2Sn2+

Better phosphor Y(P020V080)O4Eu ndash a superior temperature dependence of emission Though Y O Eu has a good temperature dependence of emissionemission Though Y2O3Eu has a good temperature dependence of emission but it does not respond to 365 nm radiation

I t f HPMV LPMV lImprovements of HPMV or LPMV lamps- The Hg vapor has been augmented with metal vapors of Tl In and others (the iodides of these metals are volatile so that the metal emission spectra result 含部分紅光) 此種照明稱之為metal vapor lamps

- LPMV lamps

result含部分紅光) 此種照明稱之為metal vapor lamps

the newest lamps contain three essential line-emitters using Eu2+ as blue Tb3+ for green emission and Eu3+ for red emission此種照明稱之為high output lamps which have line emission in contrast to the broad bandoutput lamps which have line emission in contrast to the broad band emission Eventually human eyes integrate the three wavelengths and perceive as white light

40

各式發光二極體(LED)

(二) 新世代半導體照明



白光發光二極體白光發光二極體41

白光發光二極體白光發光二極體

Diodes (LED) the future for lighting

Lampe fluorescenteLampe agrave incandescence

Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving

Pertes thermiquesbull100W geacutenegraverent seulement 18W de lumiegravere

bullElimination des pertes thermiquesbull 55 de leacutenergie sont perduslors de la conversion de lUV en

h t i ibl

35 de leacutenergie sont Perdus lors de la conversion de lexcitation UV h i iblde lumiegravere photons visibles UV en photons visibles

Adantages des LEDs puissance eacutelectrique brillance pureteacute de couleur taille dureacutee deg p q p vie sans mercure

白光 LED與傳統照明光源優缺點之比較

燈具類型白熾燈泡日光燈發光二極體照明

回應時間 lt 120 ms lt 60 ms lt 0001 ms

發光現象熱發光氣體發光冷發光

壽命約1 000小時約6 000小時約100 000小時壽命約1000小時約6000小時約100000小時

耗電量白熾燈 =

100 省電約50 省電約90

耐振動及衝擊性

燈泡與燈絲易毀損

燈管中為氬氣與銀可耐輕微碰撞

固體元件耐振動衝擊性強

缺點高耗電壽命短易碎

汞污染易碎技術尚未成熟易碎

白光LED 與照明

44

Suggested RSuggested Road oad MMap ap for for White LEDWhite LED 1 Introduction

Mobile application 58

Signals2

Others9

lt 2004 Strategies Unlimited gt

58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50

70Blue + YAG non YAGor UV + RGB phosphors

Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG

Timon Rupp Osram LED Expo 2005pp p

發光二極體(LED) 發光原理簡介

是利用電能直接轉化為光能的原理在半導體內正負極兩個端子上LED是利用電能直接轉化為光能的原理在半導體內正負極兩個端子上施加電壓當電流通過使電子與電洞相結合時剩餘能量便以光的形式釋放依其使用的材料的不同其能階高低決定光子能量與所產生的波長人眼所能觀察到各種色光之波長介於400 780 在此區間之外則為不可見光包括紅觀察到各種色光之波長介於400-780 nm在此區間之外則為不可見光包括紅外光及紫外光(UV)

38

47

螢光粉轉換白光LED (phosphor-converted LED)

48

Applications of LED

Future applications of WLED Automotive headlights

Luminance balance of LED options possibles

52

單晶片型與多晶片型白光單晶片型與多晶片型白光 LEDLED之比較之比較((pc LED Phosphor Converted LEDpc LED Phosphor Converted LED))((pc LED Phosphor Converted LEDpc LED Phosphor Converted LED))

產生白光的方法

From Chaddok NETL DOE (2009 Phosphor Global Summit)

51

Phosphor-Converted LEDHigh-Efficiency White LED UV-Pumped White-LED

ηpc-LED= ηchip times ηpackage times ηphosphor times ηStokes conversion

High Efficiency White LED UV Pumped White LED

Scattering loss

PhosphorEncapsulant

High efficiency High light-transmission

Nano-particle rarr Nano-phosphors

Index-matching rarr High-RI encapsulants

PhosphorEncapsulant

Stokes-conversion Light-extraction

rarr Novel phosphorsrarr Heatphoto stable encapsulant

p

lossloss

Low Stokes shift

rarr Near-UV LED-LED-ChipHigh light-extraction

rarr High-RI encapsulantsphosphors

p

53

Fabrication Process for WL-LEDs

Winkler Merch KGaA (2009 Phosphor Global Summit)

White Light-Emitting Devices based on GaN LEDsWhite Light-Emitting Devices based on GaN LEDs

58

60Luxeonreg from Luminleds Lighting USA

White Light LEDs with Different Color Temperatures

InGaN-based luminescence conversion white LED

phosphor

LED chip

62Energy levels of Ce3+ in YAGCe

白光白光LEDLED對所使用轉換螢光粉性能之要求對所使用轉換螢光粉性能之要求

2對LED 輻射波長具強烈吸收blue radiationultraviolet radiation

2具備高LED光rarr光轉換效率

22具物理化學穩定性抗氧化抗潮不與封裝樹脂晶片與金屬導線作用

2具備優良之溫度螢光淬滅特性 (至少120oC)( )

2具有搭配LED之發光特性(發射波長與色度)

blue LED + phosphor (yellow green orange-red)UV-LED + phosphor (blue green yellow orange red)

2粒徑適中且分布範圍窄分散性良好過粗或過細光效差

EuEu2+ 2+ and Ceand Ce3+3+ are the best activator ions for excitation based on LEDsare the best activator ions for excitation based on LEDsEuEu and Ceand Ce are the best activator ions for excitation based on LEDsare the best activator ions for excitation based on LEDs

白光白光LEDsLEDs用螢光粉用螢光粉

UV紫外254 nm 365 nm 400 nm 460 nm 540 nm 610 nm

Aluminates Y3Al5O12Ce3+(YAG)Tb3Al5O12Ce3+(TAG)

L Al O C 3+(L AG)(CaSrBa)Al2O4Eu2+CaAl4O7Eu2+

(MgCaSrBa)4Al14O25Eu2+

BaMg2Al16O27Eu2+(BAM)

Silicates

Lu3Al5O12Ce3+(LuAG)

Sr2SiO4Eu2+Ba2SiO4Eu2+

Ca2Al12O19 Mn4+

Ca8Mg(SiO4)4Cl2Eu2+(CS)

Nitrides

(MgCaSrBa)3Si2O7Eu2+

(MgCaSrBa)2SiO4Eu2+

2 42 4

Ca2Si5N8Eu2+Nitrides

(CaMgY)SiwAlxOyNzEu2+

(SrCaBa)SixOyNzEu2+

(CaMgY)SiwAlxOyNzCe2+

Ca5(PO4)3Cl Eu2+ Mn2+Ca5(PO4)3Cl Eu2+

(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-

SrGa2S4Eu2+ LiEuW2O8

35MgO05MgF2GeO2Mn4+(MGM)

Na2Ln2 B2O7Ce3+Tb3+ ZnCdS Ag 1+Cl 1-

ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+

From J Strauβ Osram (2009 Phosphor Global Summit)

57

Golden Phosphor Combination for UVGolden Phosphor Combination for UV--Chip Pumped WLChip Pumped WL--LEDLED

Recommended Phosphorsfrom Literature amp Patents

B1BaMg2Al10O17Eu2+(BAM)

Sr5(PO4)3ClEu2+ (SECA) Ca2PO4ClEu2+5( 4)3 ( ) 2 4

G1BaMgAl10O17Eu2+Mn2+(BAM-Mn)

S G S E 2+

UV -Excitable

SrGa2S4Eu2+

Y2O2SEu3+(YOS)La2O2SEu3+(LOS)

R1La2O2SEu (LOS)Ca2Si5N8Eu2+

CaAlSiN3Eu2+

Y1(MgCaSrBa)2SiO4Eu2+


Eu2+- and Ce3+-Activated Phosphors for WL-LED

AluminatesAluminates Eu2+-activated Ce3+-activated

e ge g YAGYAG (blue emission) (Greenish yellow emission)eg eg YAGYAG (blue emission) (Greenish yellow emission)

TAG LuAGTAG LuAG

SilicatesSilicates E 2+ ti t dSilicatesSilicatesegeg BOSEBOSE

NitridesNitrides

Eu2+-activated(blue to red emission)

Eu2+-activatedNitridesNitrides Eu activated(red emission)

OxynitridesOxynitrides Eu2+-activated(green to yellow emission)(green to yellow emission)

Others Others S lS l hhid Thi ll tid Thi ll t

Eu2+-activated

EuEu2+ 2+ -- and Ceand Ce3+3+-- activated phosphors are most importantactivated phosphors are most important

eg Suleg Sulphphides Thiogallatshellipides Thiogallatshellip

59

Alignment and Luminescence of Ce3+ Phosphors

(YLu)3(AlGa)5O12Ce3+

520 nm


520 nm

Y3Al5O12Ce3+ 560 nmY3Al5O12Ce3+ 560 nm

(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm

Source Prof Juumlstel Muumlnster(YGdTb)3Al5O12Ce3+


(Source Dr H Winkler MERCK Germany)

Changes in chemical environment of Ce3+ leads to changes in nephelauxetic effect and crystal field splitting



Garnet Phosphors The CIE (xy) are tunable

CIE 1931 chromaticity diagramy g

570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x

Garnet phosphors of different chemical compositions Shift of color coordinates (Source Prof Justel Munster Germany)

Practical Applications of Silicate Phosphors Practical Applications of Silicate Phosphors

(1998) (BaSr)2SiO4 Eufor better CRI(green to yellow)(g y )

(1978) Y2SiO5 Ce Tb (green narrow)--High color renderingHigh color rendering

--LCD back lightLCD back light(1967) Sr2Si3O8 2SrCl2 Eu

for better CRIblue green (480 ndash 490 nm)

(1960) BaSi2O5Pb

--Black light tubesBlack light tubes--General illuminationGeneral illumination--Medical use hellipMedical use hellip ( ) 2 5

(UVA ndash skin tanningblack light)

(1950) CaSiO3Pb Mn (orange)(orange)

(1949) (SrBaMg)3Si2O7 Pbfor UV lamps hellip and recently in hellip and recently in

light emitting diodeslight emitting diodes(1946) (ZnBe)2SiO4Mn(yellow - orange)

(1940) Zn2SiO4Mn (green)

light emitting diodes light emitting diodes

Gundula Roth LITEC Global Phosphor Summit 2007 Seoul Korea(green)

矽酸鹽螢光體主體晶格矽酸鹽螢光體主體晶格 ndashndash A Perfect MatrixA Perfect Matrix

h l ti

發光波長可藉結晶場分裂程度由紅橙微調至綠藍

能量

nephelauxeticeffect

D

4f65d excited states

crystal field splitting Dcfs

Dne

UV excitation254 nm

long wave UV and blue excitation

4f7

ground state emission caused by uvuv or blueblue excitationground state

結晶場強度

Gundula Roth LITEC Global Phosphor Summit 2007 Seoul Korea

矽酸鹽螢光體之特徵與優點矽酸鹽螢光體之特徵與優點

2對紫外對紫外近紫外近紫外藍光具有顯著之吸收藍光具有顯著之吸收

2在所有黃光螢光體中具有最高輝度值在所有黃光螢光體中具有最高輝度值

2輸出量子效率高於輸出量子效率高於9090且仍有改善空間且仍有改善空間

2量產製備成本低廉量產製備成本低廉2量產製備成本低廉量產製備成本低廉

2在紫外在紫外LEDLED應用時具有高溫度穩定性應用時具有高溫度穩定性在紫外在紫外應用時具有高溫度穩定性應用時具有高溫度穩定性

2具有具有具物理(如高強輻射)與化學穩定性抗氧化抗潮不與封裝樹脂作用抗潮不與封裝樹脂作用

2搭配紫外搭配紫外藍光晶片可供製作各種色溫的白光藍光晶片可供製作各種色溫的白光LED LED

波長可調變(BaSr)2SiO4Eu2+矽酸鹽螢光體發光性能之比較

08 Emission maximum nm

508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000

wavelength nmgGundula Roth LITEC Global Phosphor Summit 2007 Seoul Korea

以寬波長藍光激發所得(BaSr)2SiO4Eu2+螢光光譜

10 430 nm彈性的激發波長

08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000

wavelength nmGundula Roth LITEC Global Phosphor Summit 2007 Seoul Korea

(BaSr)2SiO4Eu2+ and YAG螢光粉熱穩定性之比較

100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R

Brightness (RT=100 ) Phosphors

YAG (450 nm)

40

YAGCe BOSE - 527 nmbrig

htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89

20 BOSE - 565 nm new BOSE - 565 nm old BOSE - 612 nm

rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600

temperature 蚓Temperature (oC)

temperature 蚓Gundula Roth LITEC Global Phosphor Summit 2007 Seoul Korea

Development History of Nitride PhosphorsDevelopment History of Nitride Phosphors

-1990rsquosDifficulties in synthesis of nitride rarr Lack of nitride hostsNo applicationNo application

1990rsquosInvention of blue LED

1980rsquos-R h f fi iInvention of blue LED Research of fine ceramicsfor structural material

New application (white LED) appearedNew application (white LED) appeared

Progress of synthesis methodProgress of synthesis method rarr Increase in the number of

nitride hosts

氮化物螢光粉之世代已經來臨氮化物螢光粉之世代已經來臨氮化物螢光粉之世代已經來臨氮化物螢光粉之世代已經來臨

Improved properties satisfying the requirements


(Fukuda Toshiba Corp Japan Global Phosphor Summit 2007 Seoul Korea)

Advantages and Characteristics of Nitride Phosphors (I)Advantages and Characteristics of Nitride Phosphors (I)

2具有多樣化之晶體結構與化學組成發光波長可調變

2具有相當物理與化學穩定特性

2可供紫外近紫外或藍光激發

2螢光發射光譜具有極大之波長紅位移2螢光發射光譜具有極大之波長紅位移

2極小的溫度螢光淬滅效應極小的溫度螢光淬滅效應

2具有高度共價性鍵結(窄能隙)呈現強烈電子雲擴散效應與晶場分裂效應

2具有高度凝聚陰離子網狀晶體結構減弱溫度對螢光淬滅效應溫度對螢光淬滅效應2具有高度凝聚陰離子網狀晶體結構減弱溫度對螢光淬滅效應溫度對螢光淬滅效應

(Fukuda Toshiba Corp Japan Global Phosphor Summit 2007)

氮氮((氧氧))化物螢光粉與其他組成螢光粉之比較化物螢光粉與其他組成螢光粉之比較

Oxynitridenitride phosphorsOxynitridenitride phosphors- a large family and structural diversity- full colors- a very interesting novel class of luminescent materials

(RJ Xie et al NIMS Japan Phosphor Global Summit 2007 Korea)

文獻專利中所揭露多種氮文獻專利中所揭露多種氮((氧氧))化物螢光體化物螢光體

B LaSi3N5Ce K Uheda et al 440470nm

L Si Al ON C N Hi ki t l 465 495LaSi5Al2ON9Ce N Hirosaki et al 465-495nm

SrSiAl2O3N2Eu H T Hintzen et al 480nm

SrSi AlO N Eu R J Xie et al 490nmSrSi5AlO2N7Eu R-J Xie et al 490nm

G β-SiAlONEu N Hirosaki et al 540nm

Ln2Si3O3N4Tb H T Hintzen et al 545nm etc

AESi2O2N2Eu W S Schnick et al 505-565nm

Y Ln-α-SiAlONEu J H W van Krevel et al 560-600nm

R AE2Si5N8Eu H A Hӧppe et al 580-625nmR AE2Si5N8Eu H A Hӧppe et al 580-625nm

(CaSr)AlSiN3Eu K Uheda et al 620-650nmThe wavelength of emission can be varied in a wide rangeThe wavelength of emission can be varied in a wide range

(From Fukuda Toshiba Corp Japan)

Preparation of Nitride and Oxynitride Phosphors Methodology

2 Solid-state reaction

2 M t l i id tiTemperature 1600 ndash 2000oC N2 pressure 05 ndash 10 MPa

2 Metal-imide reaction

cf HAHӧppe et al JPhysChemSol 61 2001 (2000)

2 Reduction-nitridation (RN) method Ba2-xEuxSi5N8 image with various x

NH3-CH4gas mixture

Powder sample

Alumina tubeTubular furnace

Gas-tightend cap

Precursor powder CaO Al O SiO

cf TSuehiro et al Chem Mater 17 308(2005) SEM of Ca-α-SiAlON

Precursor powder CaO-Al2O3-SiO2Gas NH3-CH4Temperature 1400 ndash 1500oC

made by RN

80

利用多重氮氧化物螢光粉所封裝高演色性白光LED

2005 2002 2004Sakuma et al IDWrsquo05 (invited talk)

006

007

008

mW

nm

]

6840K (Class D)5210K (Class N)4390K (Class W)3520K (Class WW)

Sakuma et al IDW 05 (invited talk)

003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l

(RJ Xie et al NIMS Japan Phosphor Global Summit 2007 )400 500 600 700Wavelength [nm]

白光LED 奈米螢光粉

LED PhosphorsPreliminary Results of Nano PhosphorsPreliminary Results of Nano-Phosphors

﹤50 nm

Nano-phosphors

Minimize scattering loss （particle-size ﹤50nm）pWith little adverse effects on absorption properties

Model emission spectra for InGaN(Y1-xGdx)(Al1-yGay)5 O12Ce3+ WL-LED for two compositions of YAG

580 nm

570 nm

84Nichia US Patents 6614179 (2003)

Range of color tone that can be obtained by combining (YGd)3(AlGa)5O12Ce3+ and blue-LED (460 nm)

Nichia US Patents 6614179

(2003)

85

Variation of color tone when content of phosphor is changed in LED (465 nm)changed in LED (465 nm) that combines (YGd)3(AlGa)5O12Ce3+ ( ) ( )


Development of Warm White LED for Illumination (2003 Ni hi C ti J )(2003 Nichia Corporation Japan)

Osram Optronix開發TAG螢光粉配方以Tb3+取代Nichia (YGd)3Al5O12Ce中之Gd3+迴避智財權中之Gd3+迴避智財權

Toyada Gosei開發SrO(BaSr)2SiO4P2O5B2O3螢光粉配方以取代Y Al O C 3+迴避智財權Y3Al5O12Ce3+迴避智財權

單一螢光粉之白光LED

色溫偏高(高操作電流密度)缺紅光演色性不足色溫偏高(高操作電流密度)缺紅光演色性不足

88

使用螢光粉搭配LED的發光原理與代表性廠商

產生白光原理具代表性廠商

Blue-LED + YAGCe粉 Nichia Osram Opto

Blue-LED +YAGCe + R 粉 Nichia

Blue-LED + R + G Luminled Osram Opto Simens Phili 詮興Philips 詮興

UV-LED + R + G + B 粉 TG GELcore Osram Opto日本21世紀光計畫

89

世紀光計畫

(Source PIDA 2003)

90

Phosphors Excitable with Blue LEDs

(a) Oxysulfides ldquoSr5Al2O7SEu2+rdquo (red emitting)(a) O ysu des S 5 2O7S u ( ed e tt g)(b) Silicates (BaSr)2SiO4Eu2+ Sr3SiO5Eu2+ (yellow emitting)(c) Sulfides (CaSr)SEu (CaSr)SCe3+(c) Sulfides (CaSr)SEu (CaSr)SCe(d) Nitridosilicates yellow to red emitting

Ca2Si5N8Eu2+ (600-630 nm) Sr2Si5N8Eu2+ (610-650 nm)Ca2Si5N8Eu (600 630 nm) Sr2Si5N8Eu (610 650 nm)Ba2Si5N8Eu2+ (620-660 nm) BaSi7N10Eu2+ (640-680 nm)

(f) Siloxynitrides SrSi2O2 xN2+23xEu2+ (or Ce3+)(f) Siloxynitrides SrSi2O2-xN2+23xEu (or Ce )

AdvantagesGood thermal stability tunable emission wavelengthsAdvantagesGood thermal stability tunable emission wavelengths low costs

91

Silicate-type phosphors

SynthesisSynthesis

diams 2 Sr(Ba)CO3+ SiO2 + 1 Eu 2O3 rarr (SrBa)2SiO4Eu2+

at 1250 4 h under H2N2 (2575)

(Solid State Commun 2005 135 445)( )

3 B CO M O 2 SiO E O M O B M Si O E 2+diams 3 BaCO3 + MgO + 2 SiO2 + Eu2O3 + MnO rarr Ba3MgSi2O8Eu2+

at 12504 h under H2N2 (595)

(Solid State Commun 2005 135 21)

92

Emission spectra for (SrBa)2SiO4Eu2+ as a function of Sr content (range of tuning green to orange)Sr content (range of tuning green to orange)

93WO Patent 03021691 Matsushita Electric (2003)

Nitridosilicate-type Phosphors

Synthesis

(2-x) Ba + x Eu + Si(NH2)2 rarr (BaEu)2Si5N8 + 5H2 + N2

Ca3N2 + Si3N4 + EuCl2 (1400-1500 N2) rarr Ca2Si5N8Eu2+

(US Patent US6682663 (2003)

Si3N4 + Y + Sr + Ce (or Eu) rarr SrYSi4N7Eu2+ or Ce3+

fired at 1400 (12 h) and 1600 (16 h) under 5H2-95N2(J S lid St t Ch 2004 177 5687)(J Solid State Chem 2004 177 5687)

94

Bl LED it bl (B E ) Si N h hBlue-LED excitable (Ba1-xEux)2Si5N8 phosphors

x = 014 029 041

95x = 052 081 116

MM22SiSi55NN88EuEu2+2+(3) M = CaSrBa(3) M = CaSrBaMM22SiSi55NN88EuEu (3) M CaSrBa(3) M CaSrBa

621 nm621 nm

Quantum efficiency = 72

96

Siloxynitride Phosphors

1 Li et al Chem Mater (2005)

(1-x) MCO3 +SiO2 + Si3N4 + x2 Eu2O3 (1ltxlt10) rarr MSi2O2N2(1-x) MCO3 +SiO2 + Si3N4 + x2 Eu2O3 (1ltxlt10) rarr MSi2O2N2

Ball-milled 4-5h in 2-Propanol

heated at 1100-1400 for 6-12 h under N2-H2(10)heated at 1100 1400 for 6 12 h under N2 H2(10)

2 US Patent 6632379 (2003)2 US Patent 6632379 (2003)

Si N + R O + CaO + AlN (791 52 215 8)Si3N4 + R2O3 + CaO + AlN (791522158) rarr

(CaxMy)(SiAl)12(ON)16 (R = EuTbYbEr)

C t d d f 200 k 2 d th h tCompacted under a pressure of 200 kgcm2 and then hot-pressure sintered at 200 MPa at 1700 1 h

3 US P t t 20040155225 (2004)US P t t 20040155225 (2004)3 US Patent 20040155225 (2004) US Patent 20040155225 (2004)MO + Si3N4 + AlN + Ln2O3 rarr

MxSi12-(m+n) Alm+nOnN16-nLny

97At 1200-1800 under N2 pressure of 10 atm

MSi O N (M C S B )MSi2O2-δN2+23δ (M=Ca Sr Ba)(Chem Mater 2005 17 3242)

BaSi2O2N2Eu2+ 490~500 nm (blue-green)

CaSi2O2- δ N2+23δEu2+560 nm (yellow)(δasymp0) 560 nm (yellow)

S Si O N E 2+SrSi2O2- δ N2+23δEu2+

(δasymp1) 530~570 nm (green-yellow)

PL and PLE spectra for with M09Eu01Si2O2-yN 2+23y （M = (a) Ca (b) Sr and (c) Ba）

M09Eu01Si2O2-yN 2+23y

M = Ca

M = Sr

Li t l Ch M t (2005)

M = Ba

Li et al Chem Mater (2005)

(Li et al Chem Mater (2005))MM0909EuEu0101SiSi22OO22--yyN N 2+23y2+23y

M0 9Eu0 1Si2O2-yN 2+23yM09Eu01Si2O2-yN 2+23y

M = Ca

M = Sr

M = Ba




Phosphor blends for generating white light from near UVblue重要專利與內容分析

Phosphor blends for generating white light from near-UVblue light-emitting devices ( General Electric Co US6685852 2004)

Range of excitation 350-410 nm

Sr P O Eu MnSr2P2O7EuMn

(CaSrBa)(PO4)3(FClOH)Eu2+Mn2+

(BaSrCa)2MgAl16O27Eu2+Mn2+

(Ca Sr Ba)(PO4)3(F Cl OH)Eu2+(CaSrBa)(PO4)3(FClOH)Eu

Sr4Al14O25Eu2+

Mg4O55GeFMn4+

(BaSrCa)2MgAl16O27Eu2+

102

( )2 g 16 27

CIE chromaticity coordinates for the seven phosphors Blendes of these phosphors producing white lightBlendes of these phosphors producing white light

(Ba Sr Ca) MgAl O Eu2+ Mn2+(BaSrCa)2MgAl16O27Eu2+Mn2+

Sr4Al14O25Eu2+

Mg4O55GeFMn4+

103US Patent 6685852


Phosphors Excitable with Ultraviolet LEDs

US Patent 6255670

General Electric Co (2001)

UVLED excitable phosphorUVLED excitable phosphor

A2XSi2O7Eu2+ (A = Ba Sr Ca X = Mg Zn)XAl O Eu2+ (X = Sr Ba)XAl2O4Eu2+ (X = Sr Ba)BaMg2Al16O27Eu2+ Mn2+

Ba2SiO4Eu2+2S 4Ba2(MgZn)Si2O7Eu2+

2BaMg2Al16O27Eu2+ or (SrCaBa)5(PO4)3ClEu2+

104Y2O3EuBi (R)

PL and PLE spectra for Y2O3Eu and p 2 3A2XSi2O7Eu2+ (ABa Sr Ca X Mg Zn)

105


US Patent 6255670 US Patent 6294800



UV-LED excitable phosphorsGeneral Electric Co (2001)LED UV (350-400 nm) excitable phosphors

YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors

Ca8Mg(SiO4)4Cl2EuMn(G)2 10 7

(SrCaBa) (AlGa)2S4Eu2+

Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt

Y2O3EuBi 40-80 wtY3Al5O12CeY2O2S Eu3+Bi YVO4 Eu3+Bi

SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or

(Sr Ca Ba) (PO ) ClEu2+ (B)SrY2S4 Eu

(CaSr)S Eu3+ SrSEu3+

(SrCaBa)5(PO4)3ClEu2 (B)

5-25 wt

106

全球主要50大螢光粉生產廠商全球主要50大螢光粉生產廠商

General Electric HUGesiecke amp Devrient DEHoneywell DELWB DE

APNDaejooLGCKorea

AuthentixGeneral ElectricGelcore

Osram DEPhilips NLPhosphor Tech UKPlatan RU

Daiden

LGCSDI Georgia Tech Osram

SylvaniaSarnoff

HitachiKasei OptonixNemotoNichiaOsram Melco

EuropeUSA

Japan

Osram MelcoSakai ChemSumitomo ChemTokyo Kagaku KToshibaChina

Asia Pacific Beihua Fine ChemDaming IricoGuogang JiangnanJingneng KehengIntegration DisplaysNanfang 706 New EraNemoto OdeSunlight TiancaiTokyo Kagaku K YaohuaYixing Yuelong

Integration LampsIntegration LEDNo integration

2

Yixing YuelongZhujiang Opto-elec + smaller compamies

(from JP Cuif of Rhodia Seoul 2007 Phosphor Global Summit) 30

Global Phosphors Market Value and ShareGlobal Phosphors Market Value and Share

2006 MARKET BY COUNTRY (VALUE)2006 GLOBAL MARKETS (VALUE)

Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4


From R Walat (2009 Phosphor Global Summit)

國際專利局勢現況分析

1 全球五大廠(Philips Lumiled Nichia Corp Toyoda Gosei Cree 與 Osram Opto)主宰LED相關專利其中除Nichia之外都已相互授權

2 南韓Seoul Semiconductor (子公司Seoul Opto Devices)與Nichia CorpOsram Opto 完成交互授權並與Toyoda Gosei簽署商業協定儼然成為第六強值得國內廠商注意Gosei簽署商業協定儼然成為第六強值得國內廠商注意

3 Philips宣布「LED照明專利」授權政策藉此以擴大其商業版圖 ( 照明專利授權權利為銷售額燈泡類產品業版圖 (Philips照明專利授權權利為3-5銷售額燈泡類產品為5最低025歐元)

4國內LED廠商近年來面對國際大廠專利糾紛已六連敗嚴重影響產業發展非常值得關注

2000

全球主要LED大廠US與PCT 專利數之比較

100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I

To EJ Yu ITRIEOL (2009)

日亞化學首爾半導體及台灣廠商於全球LED專利訴訟調查初步統計

廠商原告被告案件專利數


日亞化學(Nichia)

Nichia 首爾 11案 17件專利

Nichia 其他廠商 22案 40件專利

其他廠商 Nichia 3案 4件專利

合計 36案 61件專利

首爾半導體(Seoul

首爾 Nichia 3案 3件專利

其他廠商首爾 3案 3件專利Semiconductor) 合計 6案 6件專利

台灣LED廠商國外廠商台灣廠商 12案 15件專利

台灣廠商台灣廠商 5案 6件專利


資料來源科技政策研究與資訊中心mdash科技產業資訊室整理200901

注意國際大廠慣用的布局手法利用法規技巧產生族群化的專利花費無數但戰無不克

Phosphor Materials and Their Applications in Lighting and Displays

2(Shionoya amp Yen Phosphor Handbook (CRC Press 1999) Chap 1 p 7


3





5






台灣克林登




外進口
























610 nm (Red)




N-型晝白色 5000


接近太陽光 7500 1989




9


10







快速啟動器


11


12






13







Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















3





5






台灣克林登




外進口
























610 nm (Red)




N-型晝白色 5000


接近太陽光 7500 1989




9


10







快速啟動器


11


12






13







Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






















5






台灣克林登




外進口
























610 nm (Red)




N-型晝白色 5000


接近太陽光 7500 1989




9


10







快速啟動器


11


12






13







Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I























台灣克林登




外進口
























610 nm (Red)




N-型晝白色 5000


接近太陽光 7500 1989




9


10







快速啟動器


11


12






13







Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






































610 nm (Red)




N-型晝白色 5000


接近太陽光 7500 1989




9


10







快速啟動器


11


12






13







Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















N-型晝白色 5000


接近太陽光 7500 1989




9


10







快速啟動器


11


12






13







Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















10







快速啟動器


11


12






13







Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I
























快速啟動器


11


12






13







Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















12






13







Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I























13







Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I
























Sr4Al14O25Eu2+


(LaCe)(PSi)O4Tb3+

(LaCe)PO4Tb3+

(CeTb)MgAl11O19

Y2O3Eu3+


(GdCeTb)MgB5O10Mn4+




2SrO 0 84P2O5 0 16B2O3Eu2+





1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















1000

In silica tube

Ca5(PO4)3(FCl)Sb Mn


V hi h li h

Ca5(FCl)(PO4)3SbMn







共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















共沉法製程


(YEu) oxalate


Y2O3Eu






16





λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






















λem = 480 nm

(Zn Be)2SiO4Mn2+





17

Chap 6)

17

MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















MgWO4












18





longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I





















longer wavelength



1919


20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















20





Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






















Y2O3Eu3+

SrAl12O19Ce3+ Mg2+

(305 nm)

Y2O3Eu(100)

Y2O2S Eu3+

(Ce067Tb033)Mg Al11O19 (85)

(Ce0 45La0 40Tb0 15)

BaMgAl10O17Eu2

+ (90)

Sr3(PO4)5ClEu2+

(90)


(Red 633 nm)

化學組成

GdBO3Pr3+

(312 nm)

BaSi2O5Pb2+

Eu (Ce045La040Tb015) (PO4) (86)

(Ce03Gd05Tb02) MgB5O10 (88)

(90)

Sr2Al6O11Eu2+

(90)

Sr P O Eu2+



(350 nm)

SrB4O7Eu2+

(370 nm)


(90 420 nm)01) 5 10 (

+ Red)

( )

(LaGd)B3O6Bi3+

21


Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















Sb3+ Mn2+ [Mn][Sb]

Color Temperature

22


最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















最佳激發波長

23


Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















Year Phosphors




(LaCe)PO4Tb3+

CeMgAl10O19Tb3+

(GdCe)MgB5O10Tb3+

Y2O3Eu3+


24

CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















CeMgAl11O19

GdMgAl5O10

Gd(MgMn)B5O10Ce3+




25 25





26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






















26





3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






















3emittingYAGCe3+

27 26

500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















500

400


(cps

)

300


Inte

nsity

(

200


100


0



2-Theta - Scale10 20 30 40 50 60 70 8



different sources

25





5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






















5D0 rarr 7FJ

29 27





τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






















τe = 8 msec




τe = 11 msec

S6 C2

30






Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I























Sr2Al6O11Eu2+

QE = 90

31



32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















32





33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






















33



CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















CeMgAl11O19Tb330


(Ce Gd)MgB O Tb



is absent




34






GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






















GdMgB5O10CeTb


35


36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















36






Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I























Eu3+


37



250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















250-300

700-800

38

HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















HPMV Lamps






39






- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I






















- LPMV lamps



40









Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


























Diodes (LED)

19951970Hg

incandescence

g

P t th i i i i i

Energy saving



h t i ibl
















白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I































白光LED 與照明

44



Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















Signals2

Others9


58

Signs13

Automotive13

Ill i i

2

Efficiency[lmW]

Illumination

5 90

UV + RGB phosphors

Automotive150

50


Mobile

LCD BLU110

70

30RGB multi chip

2003 2005 2007 2010 yearBlue + YAG




38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















38

47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















47


48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















48

Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















Applications of LED



52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















52




51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I





















51




Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I





















Scattering loss

PhosphorEncapsulant




PhosphorEncapsulant



p

lossloss

Low Stokes shift



p

53




58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I





















58




phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I





















phosphor

LED chip

















Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I

































Silicates

Lu3Al5O12Ce3+(LuAG)


Ca2Al12O19 Mn4+


Nitrides


(MgCaSrBa)2SiO4Eu2+

2 42 4



(SrCaBa)SixOyNzEu2+



(CaSrBa)SEu2+

Others

Sr3B2O3Eu2+

Z CdS A 1+ Cl 1-




ZnSCu1+Al3+64

(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















(C S )SiN E 2+

(CaSr)SEu2+

(CaSr)SiN3Eu2+


57






S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I























S G S E 2+

UV -Excitable

SrGa2S4Eu2+



CaAlSiN3Eu2+






TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I





















TAG LuAGTAG LuAG


NitridesNitrides





Eu2+-activated



59



520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















520 nm


520 nm


(Y Gd Tb) Al O Ce3+

580 nm

(Y Gd Tb) Al O Ce3+

580 nm









570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















570055

057

051

053

y580

047

049

04504 042 044 046 048 05 052 054 056x







(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I























(1960) BaSi2O5Pb










h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















h l ti


能量

nephelauxeticeffect

D



Dne

UV excitation254 nm


4f7


結晶場強度












508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




























508

λex = 450 nm

06

07 508 515 521 527un

itsQE90-93

04

05

545 555 560565ty

arb

u

0 2

03

565 573 585 593605 i

nten

sit

01

02 605 612re

l

450 500 550 600 650 700 75000




08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















08

430 nm

06

nten

sity

04

excitationnorm

in

02 emission

300 350 400 450 500 550 600 650 700 75000



100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















100

BOS (400nm)

80

RT

BOS (400nm)

YAG (450 nm)

60

ss

to R


YAG (450 nm)

40


htne

s g ( )

100 degC 125 degC 150 degC92 86 79 99 97 89


rel

b 99 97 89 92 81 70 91 78 61 87 73 57

20 40 60 80 100 120 140 1600









nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I
























nitride hosts



































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I
















































NH3-CH4gas mixture

Powder sample


Gas-tightend cap




made by RN

80



006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















006

007

008

mW

nm

]



003

004

005

Spec

tral F

lux

[m

( )2840K (Class L)

000

001

002

400 500 600 700

Tota

l




﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















﹤50 nm

Nano-phosphors



580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















580 nm

570 nm




(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















(2003)

85








88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I

























88







89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I
























89

世紀光計畫

(Source PIDA 2003)

90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















90






91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I























91


SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















SynthesisSynthesis


at 1250 4 h under H2N2 (2575)



at 12504 h under H2N2 (595)


92




Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I





















Synthesis



(US Patent US6682663 (2003)



94


x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















x = 014 029 041

95x = 052 081 116


621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















621 nm621 nm


96




















M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I





































M = Ca

M = Sr


M = Ba




M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















M = Ca

M = Sr

M = Ba











Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I

























Sr4Al14O25Eu2+

Mg4O55GeFMn4+


102

( )2 g 16 27



Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















Sr4Al14O25Eu2+

Mg4O55GeFMn4+




US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















US Patent 6255670






104Y2O3EuBi (R)


105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I



















105






YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I























YBO3CeTb

Ba2Al10O7Eu2+Mn2+

phosphors



Y Al O Ce

8 g( 4)4 2 ( )

20-50 wt


SrY2S4 Eu3+

Y2O3EuBi 40 80 wt

BaMg2Al16O27Eu2+ or




5-25 wt

106



APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















APNDaejooLGCKorea



Daiden


SylvaniaSarnoff


EuropeUSA

Japan




2





Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I




















Total580 M US$

China28

EU11

USA5

Korea4

LightingLCD21

Others9

Lighting49

PDP7

21

Samsung SDI2

Yuelong2

40 others22

Nichia41

Japan52CRT

14

7

GE3

2

Keheng3

Nemoto3

Irico

Osram8

Philips Kasei Opt5

7Philips4








2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I
























2000


100015002000

1501 US Patents

0500

s m a e l r t I

357 323 310 2324 176 63 127

Phi

lips

Osr

am

Nic

hia

Toyo

da G

Cre

e

Seo

u

Epi

sta

Eve

rligh ITR

1410 T

PCT Patents1000

1500 1410

0

500 264121 29

271115 0 0 2

Phi

lips

Osr

am

Nic

hia

oyod

a G

Cre

e

Seo

ul

Epi

star

Eve

rligh

t

ITR

I


















Chapter 6-1 Applications of Phosphorsocw.nctu.edu.tw/course/ch-inorganic-phosphors/2010chap6... ·...

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Transcript of Chapter 6-1 Applications of Phosphorsocw.nctu.edu.tw/course/ch-inorganic-phosphors/2010chap6... ·...