CdTe Solar Cells: Basic Model and Common Deviations · With Input from Alan Fahrenbruch and Victor...
Transcript of CdTe Solar Cells: Basic Model and Common Deviations · With Input from Alan Fahrenbruch and Victor...
May 5, 2005 Device-Physics Subteam
CdTe Solar Cells:Basic Model and Common DeviationsJim Sites, Jun Pan, and Markus Gloeckler
Colorado State UniversityWith Input from Alan Fahrenbruch and Victor Karpov
CdTe Team Meeting
Goals:(1) Show the basic band structure.(2) Identify mechanisms that detract
from performance.(3) Clarify the language used.
Outline
May 5, 2005 Device-Physics Subteam
“Standard” CdS/CdTe Band PictureTypical band diagram and J-VVariations with carrier densities and
thicknesses (p-n vs. p-i-n vs. MIS)
Deviations from “Standard” J-V BehaviorBack-contact barrierCdS/CdTe interfacial effectsCollection efficiency Comment on non-uniformities
Approaches
May 5, 2005 Device-Physics Subteam
Analytic (classical physicists)Aesthetically pleasing and intellectually satisfyingComparisons among researchers straightforwardDirect comparison of basic principles with J-V curvesComplications require math approximations that can distort results
Circuit (electrical engineers)Usually shows dominant featuresAssumes general analytic solution is knownNo distance scale, hence caution requiredMay oversimplify results
Numerical Simulation (computational scientists)Handles mathematical complicationsCan reveal unsuspected featuresGraphical presentation follows naturallyHard to compare with others or convince skeptics
Basic Model
May 5, 2005 Device-Physics Subteam
Current - Voltage Band Diagram (Φbc = 0.4 eV)
Dark
Light
η = 16.2 %
p = 2×1014
EC
EF
EV
CdTe (4 µm)
SnO2 (0.5 µm)
CdS (80 nm)
Light, V = 0Dark Very Similar
Intermediate thicknesses, small back barrier, high-efficiency conditions
Small Cliff
Variation with CdTe Carrier Density
May 5, 2005 Device-Physics Subteam
Current - Voltage
2×1013
2×1013
p = 2×1014
2×1017
2×1017
Band Diagram (Φbc = 0.4 eV)
CdSSnO2
CdTe
Voltage goes up, current down. CdS thick enough, doped enough that SnO2 not part of junction.
Quantum Efficiency
May 5, 2005 Device-Physics Subteam
Current - Voltage
2×1013
p = 2×1014
2×1017
Quantum Efficiency
inc. pdec. LDin CdTe
10 nm CdS
80
200
(1) Red collection lower for higher p (less depletion); similar effect with shorter diffusion length (2) Blue collection lower for thicker CdS
Current-Voltage Parameters
May 5, 2005 Device-Physics Subteam
Current - Voltage
2×1013
p = 2×1014
2×1017
J-V Parameters
Hole Density [cm-3]
General, but not dramatic, increase in efficiency with hole density
p-n vs. p-i-n (CdTe driven)
May 5, 2005 Device-Physics Subteam
Band Diagram (Φbc = 0.4 eV)
No abrupt transition. Either p-n or p-i-n possible.
Division of p-d plane
2×1013
2×1017
CdTe p- or i
CdS n (80 nm)
SnO2 n+ (M)
p-n vs. MIS (CdS driven)
May 5, 2005 Device-Physics Subteam
Position [µm]
0.4 0.5 0.6 0.7C
ondu
ctio
n B
and
Ene
rgy
[eV
]0.0
0.1
0.2
0.3
0.4
SnO2 CdS
CdTe (2×1014) (4 µm)
1015
3×1016
n = 1017
M I (or n) S (or p)
Band Diagram (Φbc = 0.4 eV)Division of n-d Plane
Again, no abrupt transition; cells can be either p-n or MIS
Larger Back Barrier (Φbc = 0.6 eV)
May 5, 2005 Device-Physics Subteam
Case 1: Back-contact depletion does not overlap with primary-junction depletion
Forward Bias (V ~ VOC)Zero Bias
Little hole impedance
Hole impedance in both directions
Impact of back barrier changes with voltage
“Rollover” Effect
May 5, 2005 Device-Physics Subteam
Current near VOC impeded in both directions (reduced collection in forward bias)
Φbc = 0.4
0.5
0.6
Requires separation of the two depletion regions
(next slide)
For 4-µm CdTe
Overlapping Back Barrier
May 5, 2005 Device-Physics Subteam
Case 2: Partial overlap of back-contact and primary-junction depletion (key parameter is conduction-band/quasi-Fermi-level difference)
Φbc = 0.4
Primary effect is lower voltage. Secondary effect: partial reversal of photocurrent.
Φbc = 0.4
0.6
Φbc = 0.4
0.6
V ~ VOC
EC
EFn
Φbc = 0.4
0.5
0.6
Interfacial Recombination
May 5, 2005 Device-Physics Subteam
ECnCdS = 1014
nCdS = 1017EFn
EV
SnO2CdS CdTe
ΦIR (1014) ΦIR (1017)
Varies with CdS carrier density: higher n in CdS keeps holes away (modest voltage decrease at lower density)
Voltage also varies if interface trap density changes (could be the larger effect)
Collection Efficiency (CE)
May 5, 2005 Device-Physics Subteam
Current - Voltage Collection Efficiency
p = 2×1014
Φbc = 0.4 eV
less CdTebulk lifetime
9%12% 16%
True CE at modest V
Artificial CE near VOC and above
Reduced photocurrent; larger effect at higher voltage
Summary of J-V Distortions
May 5, 2005 Device-Physics Subteam
Simple ShuntRoll-over
(current reduction)
Collection Efficiency
(photocurrent reduction)
Overlapping Barriers orInterfacial Recombination (forward-current increase,
or voltage reduction)
Typical signatures. Possible to have more than one present. Possible, in fact likely, that problems are not spatially uniform.
Conclusions
May 5, 2005 Device-Physics Subteam
(1) Several effects can degrade CdTe performance, and proper separation can be a challenge.
(2) Cells work with p-n, p-i-n, or MIS structures, but choice can affect seriousness of other effects.
(3) Back-barrier by itself restricts current (reduced collection and “rollover”).
(4) Back-barrier and primary-junction depletion overlap leads to (a) enhanced forward current (reduced voltage) and (b) partial reversal of photocurrent (reduced collection).
(5) Reduced CdS carrier density, or increased trap density, enhances interfacial recombination (reduced voltage).
(6) Collection efficiency effects likely in lower efficiency cells.(7) All effects are likely to be bigger problem when stress drives
copper from back-barrier region.(8) All effects discussed unlikely to occur uniformly over solar cell.