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2013-1339(Reexamination Nos. 95/000,178 and 95/001,152)
IN THE U NITED S TATES COURT OF APPEALS FOR THE F EDERAL C IRCUIT
___________
RAMBUS, INC., Appellant ,
v.
MICRON TECHNOLOGY, INC., Appellee.
___________
Appeal from the United States Patent and Trademark Office,Patent Trial and Appeal Board.
___________
BRIEF FOR APPELLANT RAMBUS INC.
___________
June 18, 2013
J. Michael JakesJames R. BarneyMolly R. Silfen
Aidan C. SkoylesF INNEGAN , H ENDERSON , F ARABOW , G ARRETT & D UNNER , LLP901 New York Avenue, NW
Washington, DC 20001(202) 408-4000
Attorneys for Appellant Rambus Inc.
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CERTIFICATE OF INTEREST
Pursuant to Federal Circuit Rules 27(a)(7) and 47.4(a), counsel for AppellantRambus Inc. certify the following:
1. The full name of every party or amicus represented by us is:
Rambus Inc.
2. The name of the real party in interest (if the party named in the caption is notthe real party in interest) represented by us is:
Rambus Inc.
3. All parent corporations and any publicly held companies that own 10 percent or more of the stock of any party represented by us are:
None
4. The names of all law firms and the partners or associates that appeared for the parties now represented by us in the trial court or are expected to appear in thisCourt are:
J. Michael Jakes, Kathleen Daley, James R. Barney, Naveen Modi,
Molly R. Silfen, Aidan C. SkoylesFINNEGAN , HENDERSON , FARABOW , GARRETT & DUNNER , LLP
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TABLE OF CONTENTS
Table of Authorities ................................................................................................... v
Statement of Related Cases ..................................................................................... vii
Statement of Jurisdiction ............................................................................................ 1
I. Statement of the Issues .................................................................................... 2
II. Statement of the Case ...................................................................................... 2
III. Statement of Facts ............................................................................................ 3
A. Claim 33 of the 120 Patent ................................................................... 4
B. Background of the Technology-at-Issue ............................................... 5
1. Dynamic Random Access Memory ............................................ 5
2. Asynchronous Versus Synchronous DRAMChips ........................................................................................... 7
3. Prior Cases Involving Synchronous MemoryDevices ...................................................................................... 9
4. Precharging of Sense Amplifiers ..............................................11
C. The Unrebutted, Objective Evidence of Nonobviousness ..................18
D. The Prior Art-at-Issue ..........................................................................19
1. Primary References ...................................................................20
a. Bennett ............................................................................20
b. iAPX ...............................................................................21
c. iRAM ..............................................................................22
2. Secondary References ...............................................................22
a. Olson ...............................................................................23
b. Wicklund .........................................................................23
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c. Bowater ...........................................................................24
E. The Proceedings Below .......................................................................25
1. The Examiners Determination of Nonobviousness .................25
a. The Examiner Found in This Proceeding and in aRelated Proceeding that the Cited Prior Art Does
Not Disclose or Render Obvious an OperationCode Containing Both a Read Instruction and Precharge Information ....................................................25
b. The Examiner Found that the Cited Prior Art Does Not Disclose or Render Obvious a SynchronousDRAM ............................................................................31
2. The Boards Reversal of the Examiners DecisionConfirming Claim 33 ................................................................36
a. The Board Construed Precharge Information asNonfunctional Descriptive Material and Rejected the Examiners Findings RegardingPrecharging .....................................................................36
b. The Board Reversed the Examiners Findings
Regarding the Nonobviousness of SynchronousDRAMs in 1990 ..............................................................38
IV. Summary of Argument ..................................................................................44
V. Argument .......................................................................................................45
A. Standards of Review ............................................................................45
1. Claim Construction Is Reviewed de Novo ...............................45
2. Factual Findings of the Board Are Reviewed for Substantial Evidence Based on the Entire Record,Including Any Findings of Fact Made by theExaminer ...................................................................................46
3. The Board Cannot Simply Rely on Its OwnExpertise; It Must Point to Concrete Evidence in the
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Record to Support Its Findings ...............................................47
4. The Boards Ultimate Conclusion of Obviousness IsReviewed de Novo ....................................................................48
B. The Board Erred in Construing Precharge Information inClaim 33 as Nonfunctional Descriptive Material that
Need Not Be Shown in the Prior Art ..................................................48
C. The Boards Alternative Determination that an OperationCode Containing Both a Read Instruction and PrechargeInformation Would Have Been Obvious in 1990 LacksSubstantial Evidence ...........................................................................51
D. The Board Erred in Finding, Without Any Prior-Art
Examples of Synchronous DRAMs, that SynchronousDRAMs Would Have Been Obvious Based on Bennett or iAPX in View of iRAM ......................................................................60
VI. Conclusion .....................................................................................................67
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TABLE OF AUTHORITIES
Cases Page(s)
AstraZeneca LP v. Apotex, Inc ,
633 F.3d 1042 (Fed. Cir. 2010) ..........................................................................50
Bicon, Inc. v. Straumann Co. ,441 F.3d 945 (Fed. Cir. 2006) ............................................................................50
Brand v. Miller ,487 F.3d 862 (Fed. Cir. 2007) .................................................................... passim
Comark Communications, Inc. v. Harris Corp. ,156 F.3d 1182 (Fed. Cir. 1998) ..........................................................................51
Gechter v. Davidson ,116 F.3d 1454 (Fed. Cir. 1997) ..........................................................................46
Graham v. John Deere Co. ,383 U.S. 1 (1966) ................................................................................................64
In re Baker Hughes Inc. ,215 F.3d 1297 (Fed. Cir. 2000) ..........................................................................45
In re Gartside ,203 F.3d 1305 (Fed. Cir. 2000) ..........................................................................46
In re Glatt Air Techniques, Inc. ,630 F.3d 1026 (Fed. Cir. 2011) ..........................................................................60
In re Gulack ,703 F.2d 1381 (Fed. Cir. 1983) ..........................................................................48
In re Gurley ,27 F.3d 551 (Fed. Cir. 1994) ..............................................................................54
In re ICON Health & Fitness, Inc. ,496 F.3d 1374 (Fed. Cir. 2007) ..........................................................................48
In re Lowry ,32 F.3d 1579 (Fed. Cir. 1994) ............................................................................50
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In re Ngai ,367 F.3d 1336 (Fed. Cir. 2004) ................................................................... 48, 50
In re NTP, Inc. ,654 F.3d 1279 (Fed. Cir. 2011) ....................................................... 48, 64, 66, 67
In re Rambus Inc. ,694 F.3d 42 (Fed. Cir. 2012) ..........................................................................9, 10
In re Zurko ,258 F.3d 1379 (Fed. Cir. 2001) ..........................................................................47
Panduit Corp. v. Dennison Manufacturing Co. ,810 F.2d 1561 (Fed. Cir. 1987) ..........................................................................50
Pozen Inc. v. Par Pharmaceutical, Inc. ,696 F.3d 1151 (Fed. Cir. 2012) ..........................................................................54
St. Clair Intellectual Property Consultants, Inc. v. Canon Inc .,412 F. Appx 270 (Fed. Cir. 2011) .....................................................................47
Tandon Corp. v. U.S. International Trade Commission ,831 F.2d 1017 (Fed. Cir. 1987) ..........................................................................51
Universal Camera Corp. v. National Labor Relations Board ,340 U.S. 474 (1951) ............................................................................................47
Warner-Jenkinson Co. v. Hilton Davis Chemical Co. ,520 U.S. 17 (1997) ..............................................................................................50
Statutes
35 U.S.C. 141 ......................................................................................................... . 1
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STATEMENT OF RELATED CASES
Rambus is unaware of any other appeals or petitions taken in this
reexamination proceeding. There are, however, a number of different matters
pending in this Court and other courts that involve the patent-at-issue in this
appeal, U.S. Patent No. 6,324,120 (the 120 patent).
1. The following pending case involves the 120 patent.
a. Rambus Inc. v. Hynix Semiconductor Inc. , No. 5:05-cv-00334-
RMW (N.D. Cal.) (Whyte, J.).
2. The following pending cases do not involve the 120 patent but
involve patents that, like the 120 patent, descend from Application No.
07/510,898 (the 898 application).
a. Hynix Semiconductor Inc. v. Rambus Inc. , No. 5:00-cv-20905-
RMW (N.D. Cal.) (Whyte, J.). This case is on remand from Appeal Nos. 2009-
1299, -1347, 645 F.3d 1336 (Fed. Cir. 2011).
b. Micron Technology, Inc. v. Rambus Inc. , No. 1:00-cv-00792-
SLR (D. Del.) (Robinson, J.). This case is on remand from Appeal No. 2009-1263,
645 F.3d 1311 (Fed. Cir. 2011).
c. Rambus Inc. v. LSI Corp. , No. 3:10-cv-05446-RS (N.D. Cal.)
(Seeborg, J.).
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d. Rambus Inc. v. Micron Technology, Inc. , No. 5:06-cv-00244-
RMW (N.D. Cal.) (Whyte, J.).
e. Rambus Inc. v. STMicroElectronics, N.V. , No. 3:10-cv-05449-
RS (N.D. Cal.) (Seeborg, J.).
3. Several ex parte and inter partes reexaminations involving patents
descended from the 898 application are pending at the U.S. Patent and Trademark
Office (PTO). Of those, the following have been appealed to this Court.
a. In re Rambus Inc. , No. 2011-1247, 694 F.3d 42 (Fed. Cir.
2012).
b. Rambus, Inc. v. Rea , No. 2012-1634 (Fed. Cir.) (oral argument
set for July 11, 2013).
c. Rambus, Inc. v. Micron Technology, Inc. , No. 2013-1087
(Fed. Cir.) (briefing not yet complete).
d. Rambus, Inc. v. Micron Technology, Inc. , No. 2013-1192
(Fed. Cir.) (briefing not yet complete).
e. Rambus, Inc. v. Micron Technology, Inc. , No. 2013-1224
(Fed. Cir.) (docketed).
f. Rambus, Inc. v. Micron Technology, Inc. , No. 2013-1228
(Fed. Cir.) (docketed).
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g. Rambus, Inc. v. Micron Technology, Inc. , No. 2013-1426
(Fed. Cir.) (docketed).
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STATEMENT OF JURISDICTION
This appeal arises from two inter partes reexamination proceedings before
the U.S. Patent and Trademark Office (PTO). Micron Technology, Inc.
(Micron), one of the requesters, appealed the examiners confirmation of the sole
claim-at-issue to the Patent Trial and Appeal Board (Board). The Board
reversed the examiners confirmation of the claim on January 19, 2012. The
parties requested rehearing, and the Board issued a final and appealable decision
on January 8, 2013. Rambus appealed. This Court has jurisdiction under
35 U.S.C. 141.
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I. STATEMENT OF THE ISSUES
1. Did the Board err in reversing the examiners decision confirming
claim 33, where the claim requires use of an operation code that includes both a
read instruction and precharge information, where the Board ignored and dismissed
the precharge limitation as nonfunctional descriptive material, and where the
examiner correctly found in this proceeding and in a related proceeding that the
cited prior art does not disclose the operation-code-including-precharge limitation
or render it obvious?
2. Alternatively, did the Board err in reversing the examiners decision
confirming claim 33, where the examiner correctly found that neither Bennett nor
the combination of iAPX and iRAM would have rendered obvious a synchronous
dynamic random access memory device (synchronous DRAM), where the cited
prior art discloses, at most, only conventional asynchronous DRAMs, and where
the Board cited no record evidencelet alone substantial evidenceto justify its
sharp departure from the examiners findings?
II. STATEMENT OF THE CASE
Rambus appeals the Boards reversal of the examiners decision confirming
claim 33 of U.S. Patent No. 6,324,120 (the 120 patent). After a thorough
review of all the evidence, the examiner properly confirmed claim 33 over the
cited prior art and rejected Microns obviousness arguments based on Bennett in
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view of Wicklund, Bowater, or Olson, and iAPX in view of both iRAM and Olson.
On appeal, the Board misconstrued the claim by essentially ignoring the precharge
limitation altogether, dismissing it as nonfunctional descriptive material.
Moreover, the Board erroneously concludeddirectly contrary to the examiners
findingthat a person of ordinary skill in the art in 1990 would have considered it
obvious to combine the systems of Bennett or iAPX with an operation code that
specifies both a read instruction and precharge information (not disclosed in any of
the cited references) and a synchronous DRAM (also not disclosed in any of the
cited references). In reaching this conclusion, the Board ignored the evidence
developed by the examiner and, instead, substituted its own presumed expertise for
that of the examiner, contrary to this Courts precedent. Accordingly, the Boards
decision should be reversed.
III. STATEMENT OF FACTS
By 1990, when Drs. Farmwald and Horowitz filed their landmark patent
application from which the 120 patent claims priority, the DRAM device was
twenty years old, asynchronous, and, as stated by the Board, ubiquitous in the
industry. (A57.) Every DRAM device, then and today, requires for its operation a
memory controller that accepts requests to read from or write to memory, translates
each request into a series of DRAM-specific operations, and commands such
operations to the DRAM device. It is uncontested that, in the twenty years before
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1990, no one had conceived of a synchronous DRAM that uses an operation code
containing both a read instruction and an instruction to optionally precharge after
reading. Today, virtually all DRAMs are synchronous and, consistent with the
teachings of the 120 patent, include read/write commands with a precharge option.
A. Claim 33 of the 120 Patent
The 120 patent claims priority to Application No. 07/510,898, filed on
April 18, 1990. (A79.) Claim 33the sole claim-at-issuedepends from claims
26 and 29. Collectively, these claims recite:
26. A synchronous dynamic random access memorydevice having at least one memory section including a
plurality of memory cells, the memory devicecomprising:
clock receiver circuitry to receive an external clock signal ;
input receiver circuitry, including a first plurality of inputreceivers to sample block size information synchronouslywith respect to the external clock signal, wherein the
block size information defines an amount of data to beoutput by the memory device in response to a first operation code ; and
a plurality of output drivers to output the amount of datain response to the first operation code.
29. The memory device of claim 26 wherein the inputreceiver circuitry samples the first operation codesynchronously with respect to the external clock signal.
33. The memory device of claim 29 wherein the first operation code includes precharge information .
(A110[26:30-65] (emphases added).)
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B. Background of the Technology-at-Issue
1. Dynamic Random Access Memory
The 120 patent is generally directed to the structure, operation, and control
of Dynamic Random Access Memory devices or DRAMs. DRAMs store
information in memory cells, which are typically arranged in a two-dimensional
rectangular array. (A98[1:60-64]; A2413[15].) The array of cells includes
columns and rows, such that each cell can be accessed using a row/column address.
(A98[1:60-64]; A2413[15].) Each memory cell contains a capacitor for storing a
charge representing one bit of information; for example, a charged capacitor may
represent a 1, while a capacitor with no charge would represent a 0.
(A98[1:60-64]; A2412-13[13].) A computer typically has many DRAMs
controlled by a single memory controller. ( See, e.g. , A103[11:11-19] (discussing a
computer with 100 DRAMs).)
A central processing unit (CPU) can transfer information to or from a
memory address using a memory controller. (A2413[17].) The memory
controller accesses a designated row/column address in a given DRAM and
performs either a read or write operation. ( Id. )
Information and control signals flowing between the CPU and the memory
controller or between the memory controller and the numerous DRAMs can travel
on one or more buses, each consisting of a series of wires or lines that connect
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the devices. (A99[3:51-4:34].) Prior-art computers typically had a primary bus
that connected the CPU to the memory controller and a secondary bus that
connected the memory controller to an array of numerous DRAMs, as shown in the
figure below from the Wicklund reference (each set of two-way arrows represents
a bus).
(A1732.) A similar setup is shown in the iAPX reference. (A1783 (showing a
Memory Module consisting of an MCU, or memory control unit attached to
a primary MACD Bus, and an Array attached by a secondary bus to the
MCU); see also A2413-14[17-18]; A2427[56]; A2476[56].)
Generally, instructions traveling along the primary bus are system-wide
instructions such as instructions to access memory, whereas in the prior art, signal
transitions on the secondary busbetween the memory controller and the
individual DRAMsmanaged the detailed operations of the individual DRAMs in
the memory array. (A2480-81[73].)
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A focus of the 120 patent is to make the memory system more efficient so
that data can be transferred faster than was possible in the prior art. (A100[5:31-
34].) This is accomplished, in part, by (1) employing a synchronous memory
interface between the memory controller and the DRAMs, i.e., one that utilizes an
external clock signal to govern memory transactions with the individual DRAMs;
and (2) using multi-bit operation codes that provide for new combination
instructions that allow a controller to specify, e.g., both a read operation and
whether or not the DRAM should automatically precharge as a part of the read
operation.
2. Asynchronous Versus Synchronous DRAMChips
Prior to 1990 (the effective filing date of the 120 patent), conventional
DRAMs operated asynchronously, i.e., without being synchronized with an
external clock signal. (A2413[18]; A98[2:44-47].) Read and write operations
were conducted by the controller driving control signal transitions on specific bus
lines, where the transitions had to occur in a specific order based on the desired
operation. (A2413-14[18].) This was considered the most efficient way to access
information because each DRAM transferred data as soon as possible after being
instructed to do so. ( See A3249.)
In contrast, the DRAMs disclosed in the 120 patent are synchronous
(A79[Abstract]), which means they operate markedly differently from prior-art
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asynchronous DRAMs. The hallmark of a synchronous DRAM is that an external
clock signal governs the timing of the read and write operations for all DRAMs on
the bus, based on when a potentially complex instruction is sent onto the bus.
(A2414[19]; A99[3:8-11].) In a synchronous system, at least one signal line
carries an external clock signal, such as the one shown below, which is used to
synchronize all read and write operations for all the DRAMs on the bus.
(A101[8:30-31]; A2414[19]; see A101[8:44-59]; A95[Fig. 14].)
In such a system, the memory controller can issue an operation code
specifying a read to a particular DRAM at a given clock cycle and further
specifying that the requested data must be returned a precise number of clock
cycles later. (A2414-17[19-26].) Then, after that precise number of clock cycles
has elapsed, that DRAM responds and the controller can check the data on the bus
lines and know that it is the data associated with the earlier read request. ( Id. )
Meanwhile, in the intervening clock cycles, the memory controller can issue
another operation code to another DRAM and start another access while the first
DRAM is working to process the first read. ( Id. ) In this way, transactions can be
interleaved and pre-scheduled to occur at certain times, i.e., after a certain
number of clock cycles. ( Id. ) In contrast, prior-art asynchronous systems could
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only control one operation at a time because each operation required specific
control signal transitions at specific intervals throughout the operation (and thus
tied up the bus for the duration of the operation).
While it was known prior to 1990 to include a clock on a primary bus
(i.e., between the CPU and a memory controller), the bus between the memory
controller and the asynchronous DRAM chips did not include a clock, and the
DRAM chips were therefore not operated synchronously in the prior art. (A2413-
14[18]; A2427-28[55-57]; A2475-76[55-56].) Instead, prior-art DRAMs
typically came in arrays of many DRAMs, each of which was asynchronously
operated based on bus signal transitions from the memory controller, which in turn
was connected to a CPU via the primary bus. ( See A2413-14[17-18];
A2427[56]; A2475-76[55].)
3. Prior Cases Involving Synchronous MemoryDevices
In past cases involving other patents in the 120 family, the
asynchronous/synchronous issue has been extensively litigated. For instance, in
U.S. Patent No. 6,034,918 (the 918 patent), the claims-at-issue recited a
synchronous memory device, and this Court held that this term was not limited
to a single chip memory device. In re Rambus Inc. , 694 F.3d 42, 46-48
(Fed. Cir. 2012). As a result, this Court concluded that multiple DRAMs and their
associated memory controller could collectively (in certain circumstances) be
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considered a memory device. Id. Under this interpretation, even if the
individual DRAM chips themselves were controlled asynchronously by a memory
controller, if the entire collection of DRAMs and their memory controller was
connected by the memory controller to a synchronous primary bus, then the whole
collection could be considered a synchronous memory device. Id.
That issue is not present here, however. In this case, claim 33 requires a
synchronous dynamic random access memory device, as opposed to a generic
synchronous memory device, as was at issue in the 918 patent. (A110[26:30-
31]; see A110[26:39] (referring back to the memory device).) The examiner
construed this limitation to require a single synchronous DRAM chip (A1092;
A1131-32), and the Board treated the limitation the same way (A55-56 & n.17
(assuming that single-chip DRAM interpretation applied and explaining that
Micron concedes that if the preamble is limiting, claim 26 requires a single chip
DRAM)). Thus, to determine whether a DRAM chip is synchronous or
asynchronous for purposes of claim 33, one must look to the specific bus to which
that chip is attached, not some higher-level bus to which its associated controller
may be attached. If the DRAM chip itself does not receive a clock signal, then it is
an asynchronous DRAM, regardless of whether there may be synchronous
components upstream of its controller.
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4. Precharging of Sense Amplifiers
DRAMs sense (for reading) or store (for writing) a charge in a given cell
using a sense amplifier, which is an electrical component that detects and
amplifies the small amount of charge in a cell corresponding to a 0 or a 1, such
that the cell can be accessed for a read or write. The 120 patent explains this basic
configuration as follows, using the conventional terminology of word line and
bit line for row and column, respectively.
All modern DRAM, SRAM and ROM designs haveinternal architectures with row (word) and column (bit)lines to efficiently tile a 2-D area. Referring to FIG. 1,one bit of data is stored at the intersection of each word line 5 and bit line 6. When a particular word line isenabled, all of the corresponding data bits are transferred onto the bit lines. This data, about 4000 bits at a time ina 4 Mbit DRAM, is then loaded into column senseamplifiers 3 and held for use by the I/O circuits.
(A100[5:66-6:7].)
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(A83.)
When a row address is sent from the memory controller, the information
from each cell in that row is sent to the sense amplifiers. This is known as
open[ing] a row. (A2415-16[23].) In the demonstrative illustration below, the
sense amplifiers are shown near the bottom of the figure. The third row has been
opened, so the information from the third row has been copied to the sense
amplifiers.
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When a particular column address is sent from the memory controller, the
column decoder selects the corresponding sense amplifier (assuming only one bit
read per address) and, depending on whether a read or write is being performed,
the bit of information in that sense amplifier is read out or a new bit of information
is written into that sense amplifier. In the illustration below, the memory controller
has specified that the fourth column in the opened row should be read. Thus, the
0 stored in the fourth sense amplifier is output to the memory controller.
Column Decoder
R o w
D e c o
d e r
0 000000000
1 111111111
1 111111111
0 000000000
1 111111111
0 000000000
1 111111111
0 000000000
1 101010001
Sense
Amplifiers
1 101010001
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Before a new row can be loaded into the sense amplifiers, the current row
must be closed and the sense amplifiers must be precharged, i.e., their charges
must be preset to a known voltage level, e.g., between the voltages used to
represent a 0 and a 1. ( Id. ) Much like a balanced seesaw will respond to slight
pressure on one side to swing the seesaw, precharging enables the sense amplifiers
to subsequently detect a logical 1 or 0 based on just a tiny quantity of charge in a
cell. ( Id. )
In the art, DRAMs were known to operate in at least two modes: normal
mode and page mode. (A102[10:15-39].) In normal mode, a new row is
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opened and then a column address is supplied to access data, as shown in the first
demonstrative illustration above. ( Id. ) Opening a new row takes time, however,
which is generally undesirable in very high-speed memory systems. ( Id. ) An
alternative to a normal mode access is a page mode access, in which data from
a previously opened row remain in the sense amplifiers from a previous read or
write, and another column in that same row is accessed without the need to load a
new row into the sense amplifiers. Page mode accesses are only advantageous,
however, if the next cell to be accessed is in the same row as the previous cell that
was accessed. ( Id. )
In prior-art asynchronous DRAMs, one signal line (Row Address Strobe or
RAS) was used to open and close rows, and another signal line (Column Address
Strobe or CAS) was used to control column access operations (i.e., read and
write) to open a row. Annotated Figure 2 from Bowater (one of the references
relied on by the Board) illustrates this process:
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Open RowClose Row,PrechargeRead COL 0 Read COL 1
(A1740 (annotated).)
Figure 2 shows row and column control for two banks of DRAM devices A
and Bboth banks of devices operate similarly, and thus the A operation is
representative of prior-art asynchronous operation. At transition 41, the controller
transitions RAS A low, causing a row at address ROW to be opened. After
allowing enough time for the sense amplifiers to sense the row data, the controller
transitions CAS A low, causing a read at address COL 0 of ROW and data 0 to be
output onto the DATA lines. The controller then transitions CAS A high, causing
data 0 to no longer be driven onto the DATA lines. The controller later transitions
CAS A low again, causing a second read at address COL 1 of ROW and data 2 to
be output. The controller then transitions CAS A high, causing data 2 to no longer
be driven onto the DATA lines. Finally, the controller transitions RAS A high,
closing ROW and precharging the sense amplifiers.
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Notably, the controller in Bowater must hold RAS low throughout the entire
time that column operations are performed, or else the sense amplifiers will be
precharged prematurely and the column operations will not be performed correctly.
Thus, because a read or write operation requires that RAS be held low while CAS
transitions low, it would be impossible to also simultaneously signal a precharge
operation by driving RAS high. In other words, asynchronous devices require, as
shown above, that the controller hold RAS low and that no precharge signaling be
initiated until the column operations have completed.
The memory device recited in claim 33 of the 120 patent operates
differently from the prior art. Instead of using the prior-art method of dedicating a
RAS line that must be held low from the time a row is open until the time that row
is closed, the 120 patent teaches that a combination instruction or operation
code can be used. This combination instruction can include, among other things,
an indication to read or write as well as precharge information, such that the
DRAM already knows whether or not to perform a precharge operation in
conjunction with the read/write operation, without the need for a separate
instruction as was required in the prior art. (A102-03[10:40-11:45].) Such
precharge information in a synchronous DRAM allows the bus to be used only
briefly and only once per read/write request, whereas prior-art devices had to hold
RAS low until column operations were completed, effectively tying up the bus
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until a precharge was possible. Thus, in contrast to the prior art, the claimed
devicein which read instructions are combined with precharge information in an
operation codeallows the bus to be freed up to preschedule other operations.
(See A2416[23] (Mr. Murphy explaining that auto-precharge helps free up
control bandwidth, whereas a dedicated precharge command consumes additional
bandwidth).)
C. The Unrebutted, Objective Evidence of Nonobviousness
The invention recited in claim 33 of the 120 patent, including the novel use
of synchronously controlled DRAM chips to improve speed and efficiency,
achieved tremendous commercial success and widespread acceptance in the
industry. (A2459[11].) Indeed, Rambuss synchronous DRAM technology was
widely considered revolutionary in the industry. (A2785[91]; see also A3224
(stating in March 1992 that Rambus had a revolutionary memory chip technology
. . . offer[ing] a tenfold speed boost to memory chips); A3241; A3248; A3252;
A3229 (describing Rambuss approach a fundamental change in the design of
computer memory systems).) Moreover, based on his pioneering efforts in
developing synchronous memory device technology, Dr. Horowitz, one of the
inventors, received an IEEE award and was elected to the National Academy of
Engineering. (A3211; A3214; A3216.) His research has changed the way an
entire industry thinks about memory interfaces and fostered a revolution in that
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industry. Memory access bandwidths have increased by more than an order of
magnitude in just a few years as a result of the ideas he pioneered. (A3212; see
also A3216.)
As Mr. Murphy also explained, Drs. Farmwald and Horowitzs solutions to
the bottleneck problem were received with skepticism by many experts in the field
at the time they conceived the invention, but this skepticism was eventually
proven wrong, as a majority of the memory devices available today (e.g., DDR,
DDR2, DDR3, SDRAMs) employ features that are claimed in the 120 patent.
(A2459[12]; see also A2787[105] (The response to the early presentations in
1989-90 was just disbelief that Drs. Farmwald and Horowitz would be able to
achieve a 500 megabit per second DRAM data rate.); A3234 (potential licensees
expressed concern whether a computers drivers and receivers could work at these
frequencies); A3247 (system companies were skeptical that [Rambus could]
operate reliably at these speeds).)
Notably, Micron did not submit any expert declarations or other evidence
rebutting these facts.
D. The Prior Art-at-Issue
The Board found claim 33 obvious in view of (a) Bennett in combination
with Olson, Bowater or Wicklund; or (b) iAPX and iRAM in combination with
Olson. Each of these references will be discussed briefly below.
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1. Primary References
a. Bennett
Bennett discloses a mainframe computer system, circa 1982. (A1335.) The
reference focuses on the interface between a primary bus, called the Versatile
Bus, and various different types of Users connected to it. (A1335[Abstract];
A2475-76[55].) Bennetts Figure 38, reproduced below, shows four such Users
connected to a V Bus or Versatile Bus.
(A1360.) At 396 pages long, Bennett discusses many different types of Users that
can be connected to the primary bus and many different attributes of the primary
interface. (A2475-76[54-58]; see A1335-730.) It does not disclose DRAMs,
however, nor does it disclose precharging or anything related to precharging.
(A2478[63-64]; A2480-81[70-74]; see A55-58.)
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b. iAPX
iAPX discloses a system that includes a primary bus connected to memory
cards, wherein each memory card consists of a memory controller connected to
multiple asynchronous DRAMs, as was conventional in the prior art. As shown in
iAPXs Figure 1-2, the primary MACD Bus is connected to a Memory
Module, or memory card. (A1783.) The Memory Module consists of an MCU
(memory control unit) attached by a secondary bus to an Array of asynchronous
DRAMs.
( Id. ) Thus, iAPX does not disclose any DRAMs synchronously connected to the
primary bus, or even connected to the primary bus at all. ( See A2426-29[54-59];
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A2460-63[15-18].) Nor does it disclose precharging or anything related to
precharging. ( See A2442[105].)
c. iRAM
iRAM similarly does not disclose synchronous DRAMs or anything related
to precharging. iRAM discloses an integrated RAM, or iRAM. (A2135.) It
teaches integrating a dynamic RAM and its control and refresh circuitry on one
substrate, creating a chip that has dynamic RAM density characteristics, but looks
like a static RAM to users. ( Id. ) iRAM thus discloses combining one DRAM
chip with its refresh circuitry. It does not suggest that this chip should be
synchronous with any clock; and, indeed, the chip has no circuitry to receive a
clock input. ( See infra III.E.2.b; cf. A61.)
2. Secondary References
The Board relied on Olson, Wicklund, and Bowater as secondary references
to show the claimed precharge limitation. Those references all disclose
conventional, asynchronous DRAMs. (A2441-42[104]; A2483[82-83];
A1763[2:49-68]; A1733[2:62-66]; A2482[79]; A1738[Abstract].) Thus, none of
them discloses synchronous operation codes provided to a DRAM for any purpose,
much less a single operation code that combines both a read instruction and
precharge information, as recited in claim 33.
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a. Olson
Olson is designed to solve a specific problem, in which prior-art systems
always precharged after a host idle cycle, preventing a page-mode access.
(A1763[1:24-36].) Thus, Olson discloses a memory system using conventional,
asynchronous DRAMs, in which a memory controller does not precharge the sense
amplifiers if the system is idle, to allow the next access to be to the same row.
(A1763[1:8-14].) Thus, the precharge signaling in Olson, like that of any
conventional asynchronous DRAM, is sent separate from the read/write signaling,
not in any operation code combining the two instructions. ( See A3466.)
b. Wicklund
Wicklund discloses a memory system using conventional, asynchronous
DRAMs, in which a memory controller guesses whether to precharge the sense
amplifiers of the asynchronous DRAMs based on prediction algorithms.
(A1734[3:6-9, 4:4-25].) Wicklund includes asynchronous read/write signaling to
the DRAMS, and whether to precharge is determined separately by the memory
controller using an algorithm and is triggered by separate and distinct
asynchronous precharge signaling (issued by the memory controller to the
asynchronous DRAMs) that is not combined with any read/write signaling.
(A2481-82[76-77].) Thus, any precharge signaling in Wicklund is necessarily
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sent by the memory controller separate from the read/write signaling. (A3538;
A3553.)
c. Bowater
Bowater also discloses a memory system using conventional asynchronous
DRAMs and a timing-based algorithm in a memory controller for determining
special circumstances when precharging is required. In contrast to Wicklund, the
memory controller in Bowater opens a row and keeps it open until a certain
amount of time passes. ( See A3540.) In other words, Bowater assumes that,
regardless of what the previous access was, the next access will be in the same
row. (A1752[7:54-56].) If the next access is not in the same row, just like in other
prior-art asynchronous DRAMs, Bowater closes the row (thereby incurring a time
penalty, see A102[10:33-36]), and the sense amplifiers are then precharged. If
multiple accesses are in the same row, Bowater waits for a specified amount of
time and then closes the row, on the premise that the row should only be left open
for a limited period of time to preserve the integrity of data in an open row, even if
the next access is to the same row. (A1752[7:54-8:8].) Bowater cannot send
precharge information with read/write signaling, as discussed in the preceding
section, because RAS must be held low during read/write signaling and high to
initiate precharge. Thus, Bowater does not disclose the concept of combining
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read/write signaling and precharge information and does not disclose providing a
combination operation code to DRAMs.
E. The Proceedings Below
1. The Examiners Determination of Nonobviousness
After thoroughly considering all of the asserted prior art, including Bennett,
iAPX, iRAM, Olson, Wicklund, and Bowater, and after duly considering all of
Microns arguments, the examiner concluded that none of the cited art renders
claim 33 obvious. In particular, the examiner found that none of the art discloses
or renders obvious a synchronous DRAM, as required by claim 33.
Furthermore, in this proceeding and in an earlier reexamination involving a related
patent with the same specification, the examiner concluded that none of the prior
art discloses or renders obvious an operation code that contains both a read
instruction and precharge information, as required by claim 33.
a. The Examiner Found in This Proceeding and in aRelated Proceeding that the Cited Prior Art Does NotDisclose or Render Obvious an Operation CodeContaining Both a Read Instruction and PrechargeInformation
In affirming claim 33 in this reexamination, the examiner primarily focused
on the fact that the prior art fails to disclose or render obvious the synchronous
DRAM limitation. ( See A1187-90 (not maintaining proposed rejections to claim
33 [f]or the reasons set forth above, i.e., failure to disclose synchronous
DRAM).) However, based on the full context of the proceedings below and related
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proceedings, it is clear that the examiner also found no disclosure in the cited prior
art of an operation code containing both a read instruction and precharge
information, as required by claim 33.
For instance, in discussing the precharge issue with respect to claim 7 of the
120 patent, the examiner stated that the same operation code that includes
precharge information is the same operation code th[at] contains [an] instruction to
perform a first operation. The claim specifically requires the same operation code
to indicate this information. (A1133.) The examiner had explained that, for both
claims 7 and 33 ( see A3380), although Olson disclosed precharge information,
neither iAPX nor Olson showed whether this precharge information [is] sent
along with the first operation code. As noted in the claims the first operation code
must cause the memory device to perform a read operation (A3465-66). Thus, the
examiner found that neither iAPX nor Olson discloses the operation code
containing precharge as required by claim 33. ( See also A1173-74 (stating that
Issue 11, which addresses iAPX and Olson as applied to claim 33, A1088, is not
maintained [f]or the reasons noted above . . . and in the [Action Closing
Prosecution], cited supra ).)
Similarly, in the reexamination of a related patent, U.S. Patent No.
6,584,037 (the 037 patent), which has the same specification as the 120 patent,
the same examiner extensively discussed the prior arts failure to disclose an
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operation code containing both a read/write instruction and precharge information.
Specifically, in the 037 patent reexamination, as here, it was an accepted fact that
neither Bennett nor iAPX nor iRAM discloses the recited operation code that
contains both a read/write instruction and precharge information. (A3621[ll.7-10];
A3528-30; A3466; A58; A62-63.) Indeed, as Micron conceded in its request for
the present reexamination, none of these references discusses precharging at all.
(A2274 (explaining that Olson is combined with the iAPX Manual and iRAM to
supply the teaching that the operation code disclosed in the iAPX Manual includes
precharge information); A2286-90 (Microns reexamination request not alleging
any disclosure of precharging in Bennett).)
In the related 037 reexamination, the examiner found that Olson, Wicklund,
and Bowater do not disclose the claimed operation code containing both a
read/write instruction and precharge information. (A3581; A3530-31.) Thus,
although the examiner found that Bennett generically discloses an operation
code (A3552), he found that no reference discloses or suggests the claimed
operation code containing both a read/write instruction and precharge information,
and he further found that such an operation code would not have been obvious to a
person of ordinary skill in the art in 1990 (A3553; A3556-57). 1
1 The Board reversed that finding, and that issue is currently the subject of Appeal No. 2013-1087, now pending before this Court.
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With respect to Olson, the examiner found that it did not disclose whether
this precharge information is included in the same operation code as the request for
sampling data to be written. (A3530.)
With respect to Wicklund, the examiner explained in the 037 reexamination
that [t]here is no indication [in Wicklund] that precharge is automatically
performed after data is written. (A3536-37; see also A3538 ([Wicklund] does
not disclose . . . [a] precharging instruction [that] came within the same operation
code as the specifying of the sampling of the data to be written . . . .); see also
A3550; A3553.) Thus, as the examiner found, in Wicklund, page mode is
automatically turned on or off based on a prediction of whether or not the next
access will be at the same DRAM row address as the last one. (A3538.) This is
different from the claimed invention, which receives and responds to a first
operation code that includes a read (data output) instruction and precharge
information. ( Id .)
Regarding Bowater, the examiner found in the 037 reexamination that
Bowater does not disclose the claimed operation code that includes both a
read/write instruction and precharge information. (A3540-01 (Bowater does not
disclose that such precharge information is included in an operation code that also
indicates a write operation as recited in claim 34 since Bowater is respon[ding] to a
counter and not an instruction that is included with a same operation code that
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includes a specify[ing] of sampling data to be written.); see also A3556.) Instead,
Bowater has a timer, and, after a certain amount of time, the row is closed and the
sense amplifiers are precharged in response to independent signaling to precharge
that is given to the DRAM separate from any read or write signaling. (A3540-01;
A3556; A2482[78-80].)
The examiner further explained in the 037 reexamination that one would
not have been motivated to include the precharge information of Bowater in an
operation code. Specifically, he found that the precharge indication of Bowater is
based on a counter and there is no support for including this information along
with [a] write request since that would defeat the purpose of the essential counter.
(A3541.) As he further explained, [i]f Bowater provides precharge information
that will automatically precharge after writing data, Bowater would not be able to
change the time since the instruction would have already been sent. (A3542.)
In the present reexamination, the only expert testimony proffered on the
precharge issue was that of Mr. Murphy, Rambuss expert. He explained that it
would not have been obvious at the time of the invention to combine a read/write
instruction with precharge information into a single operation code, as required by
claim 33. For example, he explained that, in Bennetts mainframe computer
system, high-level instructions (such as a read or write instruction) and low-level
operations (such as a precharge operation) would be generated by different parts of
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the system. ( See A2480[70] ( Bennett is not focused on memory devices, let
alone DRAMs, and therefore it does not provide any disclosure about specific
DRAM functions such as precharging.); A2480[73] ([T]he localized operation
of precharging DRAMs after the completion of a row access is not something that
would be handled by the processors in Bennett that generate requests to memory
as those processors would not be aware of the page boundaries [i.e., which row
particular data are stored in] for the particular memory devices within the memory
modules of Bennett .).) Mr. Murphy explained that the same is true of the iAPX
and iRAM systems. (A2427-29[56-59]; A2467[31]; A2470[38].)
Consistent with Mr. Murphys testimony, in Olson, Wicklund, and Bowater,
precharge signaling is generated by the memory controller, whereas read and write
requests are generated by the CPUa higher-level processor. Thus, as
Mr. Murphy explained, if DRAMs were implemented in Bennett at all (despite not
being taught), instructions to write and signaling to precharge would have been two
different functions, originated by two different parts of the system. (A2480-
81[70, 73]; see also A2427[56].) Micron submitted no expert evidence
rebutting this testimony of Mr. Murphy. Indeed, Micron submitted no expert
testimony at all during this reexamination proceeding.
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b. The Examiner Found that the Cited Prior Art DoesNot Disclose or Render Obvious a SynchronousDRAM
The examiner also found claim 33 of the 120 patent nonobvious based on
the prior arts failure to disclose a synchronous DRAM. The examiner construed
synchronous dynamic random access memory device to be limited to a single
chip, such that it is an integrated synchronous interface for a DRAM. (A1145;
A1092; A1131-32.) In arriving at this construction, the examiner relied on the
120 patents specification, which makes clear that a synchronous DRAM device is
a single chip. (A1131-32 (quoting A99[4:21-34]).) The Board did not dispute this
construction. 2 (A56 n.17.)
Based on this essentially undisputed construction, the examiner determined
that a person of ordinary skill in the art in 1990, reading Bennett (which does not
disclose DRAMs) or iAPX in view of iRAM (which both disclose only
conventional asynchronous DRAMs) would not have been motivated to operate a
single DRAM chip synchronously, as required by claim 33. (A1134-36; A1140;
A1177-81.)
2 Micron argued that the term synchronous dynamic random access memorydevice was not limiting because it is recited only in the claims preamble. (A56n.17.) But, as the Board pointed out, the body of the claim refers back to the
preamble by reciting the memory device. ( Id. ) The Board found Micron had conceded that, to the extent synchronous DRAM is a claim limitation, it requiresa synchronous DRAM chip . ( Id . (citing A3318).) Indeed, Micron never raised thatargument in its opening brief to the Board. (A2326-70.)
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With respect to Bennett, although it discloses many possible Users that
can be connected to the synchronous Versatile Bus, it is undisputed that it does not
disclose DRAM devices as Users, even though DRAMs existed at the time of
Bennetts filing. (A2478[63]; A2413[15].) Micron argued, however, that one of
the disclosed Users in Bennettthe so-called large memory Usercould
hypothetically be made up of DRAMs, such that DRAMs are either inherent or
obvious. (A2284; see A2333-37.) The examiner addressed this argument and
correctly concluded that any such DRAMs used in Bennett would be
asynchronous , rather than synchronous as required by claim 33. (A1140.)
The only DRAMs in use at the time of the claimed invention were
asynchronous DRAMs. (A2413[18].) For instance, besides Bennett, which does
not disclose DRAMs at all, all five of the other prior-art references relied on by the
Board disclose only asynchronous DRAM-based systems. The most common way
of using DRAMs at that time was by connecting many DRAM chips (i.e., an
array) to a secondary bus having a dedicated memory controller. ( See, e.g. ,
A2475-78[54-64]; A1732; A2426-28[53-58]; A2460-63[15-17];
A2482[80]; A2483[83]; A2413-14[18].) That whole group , i.e., the
asynchronous DRAMs along with the secondary bus and a memory controller
(collectively called a memory card or module), was then connected by the
controller to a primary bus. (A2475-76[55].) As the examiner correctly found,
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such a configuration would not meet the synchronous DRAM limitation because
this limitation requires a single DRAM chip that operates synchronously
(as opposed to multiple asynchronous chips that are connected to a memory
controller that, in turn, is connected synchronously to a primary bus). (A1145;
A1092; A1131-32.)
Indeed, an expert retained by Micron conceded in litigation that Bennetts
large memory, to the extent it could be made up of DRAMs, would have been
composed of multiple chips. (A3683 (emphasis added).) And Samsung, the other
party that initially requested reexamination, made the same point in its request for
reexamination of the 037 patent, i.e., that Bennetts large memory necessarily
would have been made of multiple chips. (A3764; see also A2475-76[55].)
Consistent with these admissions, Bennett discloses that the large memory
includes up to 2 32 addresses of 32-bit words (A2475-76[55] (citing A1637[95:58-
59])), a number that even now cannot be contained on a single DRAM chip
(see A2413[15]).
Moreover, as Mr. Murphy explained in an unrebutted declaration, Bennetts
architecture would not permit individual DRAM chips to be connected directly to
Bennetts primary bus. Specifically, Mr. Murphy testified that Bennett describes
the VBI (or primary bus) as being designed to accept complex connections,
containing many different pins. (A2476-77[58-62].) If a single DRAM chip
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were to be connected to the primary bus, it would have to contain all of those pins
and the complex circuitry that goes with them. ( Id .) Mr. Murphy explained that
DRAMs were desirable specifically because they were small and cheap, and
adding so many pins and so much circuitry would have made each DRAM chip
large and expensive, and therefore undesirable. ( Id. ; see also A1593[8:10-12].)
Given all this evidence, the examiner concluded that Bennett did not
disclose or render obvious a synchronous DRAM chip. With respect to the size of
Bennetts large memory, the examiner stated that he
was not ab[le] to find any disclosure in Bennett thatwould show that a single integrated memory chip (i.e. theclaimed synchronous dynamic random access memorydevice) would support the noted address [i.e., size]requirements. Thus, even if one would have considered that it would have been obvious to have a DRAM based memory device, the disclosure of Bennett does notdisclose that the relied up[on] memory device that is thememory device that is on the same substrate as theVersatile Bus Interface, would be a DRAM.
(A1140.) Instead, according to the examiner, Bennetts 2 32 addresses of 32 bit
words (A1637[95:58-60]) support only multi-DRAM memory cards and the
like (A1140). The examiner therefore found Bennett does not anticipate or render
obvious the claimed synchronous DRAM chip. ( Id. )
As for the proposed iAPX/iRAM combination, the examiner found it would
not have been obvious to combine iAPX Manual with iRAM . . . . (A1187.) The
examiner relied in part on testimony from Intels architects of the iAPX system,
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who stated that the DRAMs of iAPX were designed to be interchangeable with
other types of memory devices. According to Intels designers, replacing the
whole memory card of iAPX with a single iRAM chip would defeat that goal of
iAPX since the MCU [memory control unit] would have to be physically removed
and placed into each individual iRAM. (A1178; see also A1177.)
The examiner concluded that
nothing within the references indicate[s] that anintegrated MCU and DRAM in iAPX would be
predictable to one of ordinary skill in the art given thefact that iAPX designers sought to separate the MCUfrom the storage array so that different types of DRAMscan be used. The Examiner finds that based on thesubmitted testimonies and declaration the combinationwould not have been predictable and would teach awayfrom having a system which would be flexible in usingdifferent types of DRAMs.
(A1179-80.)
The examiner also concluded that replacing the memory card of iAPX with
individual iRAM chips connected to the primary bus would defeat several other
goals of iAPX and render the system inoperable. (A1180-81.) For instance, the
examiner agreed with Rambus that
integrating a memory control unit onto each of thememory devices would prevent any one of the memorycontrol units in the system from having the perspectiveon the data and [error checking and correction]information stored in the array that would allow for theerror detection and correction to occur. The proposed
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integration would, therefore, render the iAPX 432 systeminoperable.
(A1180 (emphasis added) .) The examiner further agreed with Rambus that the
combination would prevent the use of iAPXs spare DRAM chip, which can be
used to replace a defective DRAM in the array if the memory control unit detects
such a faulty device. ( Id. ) Without a global perspective on the array, a
perspective which would no longer exist if the memory control unit were
integrated onto each of the DRAMs, the ability to utilize the spare DRAM device
would be eliminated. (A1181.)
2. The Boards Reversal of the Examiners DecisionConfirming Claim 33
a. The Board Construed Precharge Information asNonfunctional Descriptive Material and Rejectedthe Examiners Findings Regarding Precharging
In its decision on appeal, the Board spent less than two pages discussing the
precharge limitation in combination with Bennett (A58-59), with even less analysis
with respect to adding precharge information to the combination of iAPX and
iRAM (A62-63). On rehearing, the Board simply rehashed its conclusions
regarding both sets of combinations. (A25-29.)
As part of its analysis, the Board determined that claim 33s recitation of
precharge information constitutes nonfunctional descriptive material, which
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cannot be used to distinguish the prior art. (A59; A62; A26.) For example, in
discussing the iAPX/iRAM combination, the Board held:
[T]he type of information added to the first operationcode in claim 33, in this case, precharge information,constitutes nonfunctional descriptive material, becauseclaim 33 does not require the device to precharge, decideto precharge, or to have the ability to do either (i.e., tooperate differently based on the precharge informationversus some other type of information). Suchnonfunctional descriptive material concerninginformation which the claimed device need not even
process to render a distinct decision fails to render claim
33 patentably distinct over [the prior art].
(A62; see also A59; A26.)
In the alternative, the Board found (contrary to the examiners findings) that
combining precharge information with a read instruction in either Bennett or the
iAPX/iRAM combination would have been obvious to a person of ordinary skill in
the art in 1990. For Bennett, the Board found (contrary to the examiner) that
Wicklund shows . . . that precharge normally (i.e., when the DRAM is not in page
mode) occurs at the end of a read or write function, showing the obviousness of
banding the two related functions into Bennetts write code. (A58; see also A26.)
Notably, however, the Board failed to point to anything in the record (other than
attorney argument contained in Microns briefs) to justify this sharp departure from
the examiners findings, nor did the Board address the stark conflict between its
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personal view and the fact that a read and a precharge are necessarily separate
operations in prior-art DRAMs.
Similarly, for the iAPX/iRAM combination, the Board stated in conclusory
fashion that sending one operation code with information as required to perform
certain read operations would have been obvious for the purpose of keeping related
read control information together in an existing (or modified) iAPX operation
code. (A62-63.) On rehearing, the Board merely added that skilled artisans
would have recognized that an iAPX modified controller would have had sufficient
perspective to send a precharge signal to an integrated DRAM in the same code
as the read signal since the precharge signal normally would have followed the
controllers read signal in prior art systems. (A29.) Again, the Board failed to
point to any evidence in the record to justify this sharp departure from the
examiners finding of nonobviousness.
b. The Board Reversed the Examiners FindingsRegarding the Nonobviousness of SynchronousDRAMs in 1990
The Board also reversed the examiners finding that neither Bennett nor
iAPX/iRAM renders the synchronous DRAM limitation obvious. Regarding
Bennett, the Boards only analysis entailed explaining that DRAMs were
ubiquitous, so one of ordinary skill in the art allegedly would have known to use
individual synchronous DRAMs as the large memory. (A56.) First, the Board
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accepted, at least for purposes of argument, the examiners construction of the
synchronous DRAM term, requiring synchronous DRAM to be a single DRAM
chip that receives a clock signal and is connected synchronously to a bus. (A56
n.17.) The Board then found that, because (in the Boards view) Bennett generally
discusses attaching memory chips other than DRAMs to the bus, it would have
been obvious to connect a single DRAM chip directly to Bennetts primary bus and
operate it synchronously. (A57-58.) Thus, notwithstanding Bennetts failure to
disclose DRAMs at all, and notwithstanding that the only DRAMs in use at the
time were asynchronous DRAMs, the Board concluded that synchronous DRAMs
would have been obvious. The Board relied on an implicit motivation to
improve the technology, since (in hindsight) the 120 patents synchronous DRAM
technology has proven to be faster than the prior-art asynchronous DRAM
technology. (A57 n.18.)
On rehearing, the Board repeated its assertions that Bennetts generic
synchronous single-chip memory disclosure and Rambuss concession that
DRAMs were a well-known, if not dominant, type of memory chip render obvious
the claimed combination. (A21 (citation omitted).) The Board then specifically
addressed Rambuss argument that Bennetts large memory was intended to hold
up to 2 32 addresses, which is much more than can be held on a single DRAM chip,
even today. The Board first relied on the non sequitur that the claims of the
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120 patent do not require 2 32 addresses, even though Rambuss argument was
based on Bennetts implicit suggestion that the large memory would necessarily
consist of more than just a single DRAM chip. ( Id. ) Alternatively, the Board
reasoned that Bennett specifically contemplates less address space in chips having
a small number of pins, relying on the disclosure of up to 232 addresses, and it
further reasoned that Bennett contemplates large address space in future memory
chips. (A21-22.)
The following annotated figures from Wicklund (top (A1732)) and Bennett
(bottom (A1360)) summarize the Boards holding regarding synchronous DRAM:
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As illustrated above, Rambus presented evidence (including admissions by Micron
and Samsung, and the unrebutted testimony of Mr. Murphy) that, to the extent
DRAMs would be used at all in Bennett, they would have been incorporated as
shown above in red ( see arrow pointing to Device D), i.e., an entire array of
asynchronous DRAMs and their controller would be attached to Bennetts primary
bus. As the examiner correctly found, such a configuration would not meet the
synchronous DRAM limitation because the individual DRAM chips would still
be asynchronous (i.e., asynchronously connected to their controller), just as they
were in the prior art. The Board found, however, that it would have been obvious
in 1990 to follow the blue path above ( see arrow pointing to Device C) by
attaching an individual DRAM chip directly to the synchronous Versatile Bus of
Bennetts mainframe computer system (even though the Versatile Bus must then
support new functions never supported on a synchronous bus, such as precharge
and refresh).
With respect to the combination of iAPX and iRAM, the Board again
foundcontrary to the examiners findingthat the iAPX/iRAM combination
rendered synchronous DRAMs obvious. It is undisputed, however, that iAPX
discloses only asynchronous DRAM chips attached to a memory controller, and
that the memory controller provides the interface with the primary bus. (A47.)
With respect to iRAM, despite no one (neither Micron nor the examiner) arguing
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that iRAM discloses synchronous DRAM chips, and contrary to the abundant
evidence that the iRAM chip was not designed to even receive a clock input, the
Board determined that iRAMs reference to a synchronous 2187 iRAM meant
that [t]he iRAM may be synchronous in the sense of the 120 patent. (A54;
see A61 (The iRAM solution also includes synchronous iRAMs, similar to the
synchronous MCU operation (under the rejection of claim 1). (citing A54)).)
As Rambus explained, however, and as the examiner correctly found,
iRAMs reference to synchronous means something entirely different from the
claimed synchronous DRAM. Indeed, even Micron never argued that iRAM
discloses a synchronous device within the meaning of claim 33. (A2266-67;
A2275; A2346-50 & n.10.) And with good reasonthe iRAM reference shows
that there is no clock signal that reaches the allegedly synchronous chip. Instead,
as shown in iRAMs Figure 26, the 2187 iRAM chip (highlighted in pink) receives
only conventional transition-based signalssuch as chip enable (CE) and write
enable (WE)and does not receive any clock signal (CLK), such as the one
received by the separate 8051 chip (highlighted in green).
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(A2170 (highlighting added).)
Indeed, the European Patent Office (EPO) looked at the iRAM reference
and concluded that, although iRAM contain[s] a device labelled as Synchronous
2167, that use of the term synchronous has nothing to do with a synchronous
bus protocol controlled by a clock signal as claimed. (A3310[11].) Rather, as
the EPO explained, the synchronous versus asynchronous descriptions in
iRAM refer to whether refreshing is done autonomously or through a separate
input. (A3311[11].) It thus concluded that [n]one of the disclosed iRAM
devices has a synchronous bus interface in the sense of the present invention, with
an external clock signal provided to the device. ( Id .; see also A2464[21]
(Mr. Murphy explaining same thing).)
On rehearing, after Rambus explained these facts, the Board nevertheless
maintained its incorrect finding, stating that [t]he cited iRAM page describes
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synchronous 2187 iRAM . . . running at 10MHz by utilizing a method known as
clock stretching. (A28 (quoting A2169).) But the Board cited no evidence
(nor is there any evidence in the record) suggesting that iRAM contemplated a
synchronous DRAM, as recited in claim 33.
As for the examiners finding that it would not have been obvious to
combine iAPX Manual with iRAM (A1187) and his specific finding that such a
combination would render iRAM inoperable (A1180), the Board dismissed these
findings as not persuasive yet failed to cite any record evidenceother than
attorney argument contained in Microns briefsto support this sharp departure
from the examiners findings and conclusions (A61).
IV. SUMMARY OF ARGUMENT
The Board erred in reversing the examiners finding that claim 33 is
nonobvious in view of the cited prior art. First, the Board erred as a matter of law
in construing the precharge information limitation of claim 33 as nonfunctional
descriptive material, essentially eliminating the limitation altogether, contrary to
this Courts precedent. Second, the Board erred in substituting its own presumed
expertise for that of the examiner in determining (as an alternative to its
nonfunctional claim-construction ruling) that it would have been obvious in
1990 to include a read instruction and precharge information in the same operation
code, notwithstanding that asynchronous devices cannot signal read operations and
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precharge operations at the same time, that none of the cited prior art discloses
synchronous DRAM operation codes, and that the examiner found the concept was
not obvious in 1990.
Third, the Board erred in reversing the examiners finding that neither
Bennett nor the combination of iAPX and iRAM would have rendered a single-
chip synchronous DRAM obvious to a person of ordinary skill in the art in 1990. 3
The Boards reliance on its own presumed expertise and on Microns attorney
argument does not constitute substantial evidence, nor does it justify disregarding
the examiners detailed and explicit factual findings on this issue.
V. ARGUMENT
A. Standards of Review
1. Claim Construction Is Reviewed de Novo
[C]laim construction by the PTO is a question of law that [this Court]
review[s] de novo . In re Baker Hughes Inc. , 215 F.3d 1297, 1301 (Fed. Cir.
2000).
3 The Court need not reach this issue if it reverses the Board on the prechargelimitation.
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2. Factual Findings of the Board Are Reviewed forSubstantial Evidence Based on the Entire Record,Including Any Findings of Fact Made by theExaminer
This Court reviews factual findings of the Board for substantial evidence,
based on a review that is confined to the factual record compiled by the Board.
In re Gartside , 203 F.3d 1305, 1315 (Fed. Cir. 2000). Under the substantial
evidence standard of review, [the Court] search[es] for evidence, clearly set forth
in the record below, to justify the conclusions that the Board has drawn. Brand v.
Miller , 487 F.3d 862, 868 (Fed. Cir. 2007). This Court has also expressly held
that the Boards opinion must explicate its factual conclusions, enabling [the
Court] to verify readily whether those conclusions are indeed supported by
substantial evidence contained within the record. Gartside , 203 F.3d at 1314
(citing Gechter v. Davidson , 116 F.3d 1454, 1460 (Fed. Cir. 1997)).
The record in an inter partes reexamination proceeding includes any findings
of fact made by the examiner. Thus, regardless of whether the Board adopts or
incorporates the examiners findings into its opinion, all of the examiners findings
must be considered part of the record on appeal and must be given appropriate
weight in determining whether the Boards decision is supported by substantial
evidence. See id. at 1312 ([S]ubstantial evidence review involves examination
of the record as a whole , taking into account evidence that both justifies and
detracts from an agencys decision. (emphases added) (citing Universal Camera
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Corp. v. NLRB , 340 U.S. 474, 487-88 (1951) )); see also St. Clair Intellectual Prop.
Consultants, Inc. v. Canon Inc ., 412 F. Appx 270, 276 (Fed. Cir. 2011)
(unpublished) (stating that an examiner in reexamination can be considered one of
ordinary skill in the art).
3. The Board Cannot Simply Rely on Its Own Expertise;It Must Point to Concrete Evidence in the Recordto Support Its Findings
In Zurko , this Court made clear that, in determining patentability, the Board
cannot simply rely on common sense or its own expertise without pointing to
specific factual support in the record:
With respect to core factual findings in a determinationof patentability, however, the Board cannot simply reachconclusions based on its own understanding or experienceor on its assessment of what would be basicknowledge or common sense. Rather, the Board must
point to some concrete evidence in the record in supportof these findings. To hold otherwise would render the
process of appellate review for substantial evidence onthe record a meaningless exercise.
In re Zurko , 258 F.3d 1379, 1386 (Fed. Cir. 2001) (footnote omitted); accord
Brand , 487 F.3d at 869 ([I]n the context of a contested case, it is impermissible
for the Board to base its factual findings on its expertise, rather than on evidence in
the record, although the Boards expertise appropriately plays a role in interpreting
record evidence.).
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4. The Boards Ultimate Conclusion of Obviousness IsReviewed de Novo
Obviousness is a question of law that [this Court] review[s] de novo with
underlying factual findings. In re NTP, Inc. , 654 F.3d 1279, 1297 (Fed. Cir.
2011); see also In re ICON Health & Fitness, Inc. , 496 F.3d 1374, 1378 (Fed. Cir.
2007) (Although based on determinations of underlying facts, which we review
for substantial evidence, the ultimate conclusion of obviousness is a legal question,
which we review de novo.).
B. The Board Erred in Construing Precharge Informationin Claim 33 as Nonfunctional Descriptive Material thatNeed Not Be Shown in the Prior Art
As part of its obviousness analysis, the Board construed precharge
information in claim 33 as nonfunctional descriptive material, which the Board
concluded need not be present in the prior art to establish invalidity. (A59; A62.)
Under this erroneous construction, the Board essentially eliminated the precharge
information limitation altogether, making it unnecessary to show in the prior art.
As legal authority for doing so, the Board cited In re Ngai , 367 F.3d 1336, 1338
(Fed. Cir. 2004), which in turn relies on In re Gulack , 703 F.2d 1381, 1385
(Fed. Cir. 1983). (A59.) The Boards construction, however, is legally faulty and
unsupported by any controlling authority.
As explained above, the operation code recited in claim 33 tells the DRAM
that the next operation is a read and tells the sense amplifiers whether or not to
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precharge after that read. ( Supra III.B.4.) Even though, as the Board noted, the
claim does not recite the act of precharging the sense amplifiers (A59), for a
DRAM to operate as described in claim 33, it must receive an operation code that
includes both a read instruction and precharge information. Indeed, claim 29
specifically requires the DRAM to sample this operation code. Receiving both
pieces of information in the same operation code changes the timing of bus access
compared to the prior art and significantly improves the efficiency of the system.
(Supra III.B.4.) Thus, claim 33s requirement that precharge information be
included in the same operation code as the read instruction cannot be dismissed as
mere nonfunctional material since it provides necessary information to the
DRAM and affects bus timing in a critical way that distinguishes the prior art.
Indeed, it bears repeating that in all of the secondary references relied on by the
Board (Olson, Wicklund, and Bowater), the read/write operation and precharge
operation are sent in necessarily separate signals, with the bus tied up between
those signals, whereas the invention recited in claim 33 requires only a single, brief
bus access because the read instruction and precharge information are contained in
the same operation code. This is not a trivial or nonfunctional distinction, as the
Board erroneously held.
It is a basic tenet of patent law that the claims define the scope of the patent
right, and every limitation of the claim must be considered to determine validity or
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infringement. See Warner-Jenkinson Co. v. Hilton Davis Chem. Co. , 520 U.S. 17,
29 (1997) (Each element contained in a patent claim is deemed material to
defining the scope of the patented invention . . . .); Panduit Corp. v. Dennison
Mfg. Co. , 810 F.2d 1561, 1576 (Fed. Cir. 1987) (A disregard of claim limitations,
as here, would render claim examination in the PTO meaningless.); Bicon, Inc. v.
Straumann Co. , 441 F.3d 945, 950-52 (Fed. Cir. 2006) ([C]laims are interpreted
with an eye toward giving effect to all terms in the claim.).
The Boards reliance on Ngai is inapposite. That case refers to the rule that
alleged inventions that consist of nothing more than printed matter to be observed
by a human generally do not fall within the class of patentable statutory subject
matter. Ngai , 367 F.3d at 1339; see also AstraZeneca LP v. Apotex, Inc. , 633 F.3d
1042, 1063-65 (Fed. Cir. 2010) (citing Ngai for proposition that adding new
instructions to a known product is simply an addition of unpatentable subject
matter). The printed matter cases limit patentable subject matter in order to
prevent inventors from patenting material useful and intelligible only to the
human mind. In re Lowry , 32 F.3d 1579, 1583 (Fed. Cir. 1994). Here, by
contrast, the bits that provide precharge information are not even read by humans;
they are sent to DRAMs. The printed matter cases have no factual relevance
where the invention as defined by the claims requires that the information be
processed not by the mind but by a machine, the computer. Id. (citation
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omitted). Thus, the printed matter exception is not even applicable in the context
of computerized bits.
The Boards construction also runs afoul of this Courts claim-differentiation
doctrine. As this Court has held, claim differentiation create[s] a presumption
that each claim in a patent has a different scope. Comark Commcns, Inc. v.
Harris Corp. , 156 F.3d 1182, 1187 (Fed. Cir. 1998) (holding that proposed
construction of claim 1 would violate the doctrine of claim differentiation by
rendering claim 2 superfluous); see also Tandon Corp. v. USITC , 831 F.2d 1017,
1023 (Fed. Cir. 1987). Here, the Boards construction, which ignores precharge
information as mere nonfunctional descriptive material, would render claim 33
superfluous as compared to claim 29, and is therefore presumptively incorrect. See
Comark , 156 F.3d at 1187.
C. The Boards Alternative Determination that an OperationCode Containing Both a Read Instruction and PrechargeInformation Would Have Been Obvious in 1990 LacksSubstantial Evidence
There is no dispute that the primary references relied on by the Board, i.e.,
Bennett, iAPX, and iRAM, do not discuss precharging at all a