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    2013-1339(Reexamination Nos. 95/000,178 and 95/001,152)

    IN THE U NITED S TATES COURT OF APPEALS FOR THE F EDERAL C IRCUIT

    ___________

    RAMBUS, INC., Appellant ,

    v.

    MICRON TECHNOLOGY, INC., Appellee.

    ___________

    Appeal from the United States Patent and Trademark Office,Patent Trial and Appeal Board.

    ___________

    BRIEF FOR APPELLANT RAMBUS INC.

    ___________

    June 18, 2013

    J. Michael JakesJames R. BarneyMolly R. Silfen

    Aidan C. SkoylesF INNEGAN , H ENDERSON , F ARABOW , G ARRETT & D UNNER , LLP901 New York Avenue, NW

    Washington, DC 20001(202) 408-4000

    Attorneys for Appellant Rambus Inc.

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    i

    CERTIFICATE OF INTEREST

    Pursuant to Federal Circuit Rules 27(a)(7) and 47.4(a), counsel for AppellantRambus Inc. certify the following:

    1. The full name of every party or amicus represented by us is:

    Rambus Inc.

    2. The name of the real party in interest (if the party named in the caption is notthe real party in interest) represented by us is:

    Rambus Inc.

    3. All parent corporations and any publicly held companies that own 10 percent or more of the stock of any party represented by us are:

    None

    4. The names of all law firms and the partners or associates that appeared for the parties now represented by us in the trial court or are expected to appear in thisCourt are:

    J. Michael Jakes, Kathleen Daley, James R. Barney, Naveen Modi,

    Molly R. Silfen, Aidan C. SkoylesFINNEGAN , HENDERSON , FARABOW , GARRETT & DUNNER , LLP

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    ii

    TABLE OF CONTENTS

    Table of Authorities ................................................................................................... v

    Statement of Related Cases ..................................................................................... vii

    Statement of Jurisdiction ............................................................................................ 1

    I. Statement of the Issues .................................................................................... 2

    II. Statement of the Case ...................................................................................... 2

    III. Statement of Facts ............................................................................................ 3

    A. Claim 33 of the 120 Patent ................................................................... 4

    B. Background of the Technology-at-Issue ............................................... 5

    1. Dynamic Random Access Memory ............................................ 5

    2. Asynchronous Versus Synchronous DRAMChips ........................................................................................... 7

    3. Prior Cases Involving Synchronous MemoryDevices ...................................................................................... 9

    4. Precharging of Sense Amplifiers ..............................................11

    C. The Unrebutted, Objective Evidence of Nonobviousness ..................18

    D. The Prior Art-at-Issue ..........................................................................19

    1. Primary References ...................................................................20

    a. Bennett ............................................................................20

    b. iAPX ...............................................................................21

    c. iRAM ..............................................................................22

    2. Secondary References ...............................................................22

    a. Olson ...............................................................................23

    b. Wicklund .........................................................................23

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    iii

    c. Bowater ...........................................................................24

    E. The Proceedings Below .......................................................................25

    1. The Examiners Determination of Nonobviousness .................25

    a. The Examiner Found in This Proceeding and in aRelated Proceeding that the Cited Prior Art Does

    Not Disclose or Render Obvious an OperationCode Containing Both a Read Instruction and Precharge Information ....................................................25

    b. The Examiner Found that the Cited Prior Art Does Not Disclose or Render Obvious a SynchronousDRAM ............................................................................31

    2. The Boards Reversal of the Examiners DecisionConfirming Claim 33 ................................................................36

    a. The Board Construed Precharge Information asNonfunctional Descriptive Material and Rejected the Examiners Findings RegardingPrecharging .....................................................................36

    b. The Board Reversed the Examiners Findings

    Regarding the Nonobviousness of SynchronousDRAMs in 1990 ..............................................................38

    IV. Summary of Argument ..................................................................................44

    V. Argument .......................................................................................................45

    A. Standards of Review ............................................................................45

    1. Claim Construction Is Reviewed de Novo ...............................45

    2. Factual Findings of the Board Are Reviewed for Substantial Evidence Based on the Entire Record,Including Any Findings of Fact Made by theExaminer ...................................................................................46

    3. The Board Cannot Simply Rely on Its OwnExpertise; It Must Point to Concrete Evidence in the

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    Record to Support Its Findings ...............................................47

    4. The Boards Ultimate Conclusion of Obviousness IsReviewed de Novo ....................................................................48

    B. The Board Erred in Construing Precharge Information inClaim 33 as Nonfunctional Descriptive Material that

    Need Not Be Shown in the Prior Art ..................................................48

    C. The Boards Alternative Determination that an OperationCode Containing Both a Read Instruction and PrechargeInformation Would Have Been Obvious in 1990 LacksSubstantial Evidence ...........................................................................51

    D. The Board Erred in Finding, Without Any Prior-Art

    Examples of Synchronous DRAMs, that SynchronousDRAMs Would Have Been Obvious Based on Bennett or iAPX in View of iRAM ......................................................................60

    VI. Conclusion .....................................................................................................67

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    v

    TABLE OF AUTHORITIES

    Cases Page(s)

    AstraZeneca LP v. Apotex, Inc ,

    633 F.3d 1042 (Fed. Cir. 2010) ..........................................................................50

    Bicon, Inc. v. Straumann Co. ,441 F.3d 945 (Fed. Cir. 2006) ............................................................................50

    Brand v. Miller ,487 F.3d 862 (Fed. Cir. 2007) .................................................................... passim

    Comark Communications, Inc. v. Harris Corp. ,156 F.3d 1182 (Fed. Cir. 1998) ..........................................................................51

    Gechter v. Davidson ,116 F.3d 1454 (Fed. Cir. 1997) ..........................................................................46

    Graham v. John Deere Co. ,383 U.S. 1 (1966) ................................................................................................64

    In re Baker Hughes Inc. ,215 F.3d 1297 (Fed. Cir. 2000) ..........................................................................45

    In re Gartside ,203 F.3d 1305 (Fed. Cir. 2000) ..........................................................................46

    In re Glatt Air Techniques, Inc. ,630 F.3d 1026 (Fed. Cir. 2011) ..........................................................................60

    In re Gulack ,703 F.2d 1381 (Fed. Cir. 1983) ..........................................................................48

    In re Gurley ,27 F.3d 551 (Fed. Cir. 1994) ..............................................................................54

    In re ICON Health & Fitness, Inc. ,496 F.3d 1374 (Fed. Cir. 2007) ..........................................................................48

    In re Lowry ,32 F.3d 1579 (Fed. Cir. 1994) ............................................................................50

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    vi

    In re Ngai ,367 F.3d 1336 (Fed. Cir. 2004) ................................................................... 48, 50

    In re NTP, Inc. ,654 F.3d 1279 (Fed. Cir. 2011) ....................................................... 48, 64, 66, 67

    In re Rambus Inc. ,694 F.3d 42 (Fed. Cir. 2012) ..........................................................................9, 10

    In re Zurko ,258 F.3d 1379 (Fed. Cir. 2001) ..........................................................................47

    Panduit Corp. v. Dennison Manufacturing Co. ,810 F.2d 1561 (Fed. Cir. 1987) ..........................................................................50

    Pozen Inc. v. Par Pharmaceutical, Inc. ,696 F.3d 1151 (Fed. Cir. 2012) ..........................................................................54

    St. Clair Intellectual Property Consultants, Inc. v. Canon Inc .,412 F. Appx 270 (Fed. Cir. 2011) .....................................................................47

    Tandon Corp. v. U.S. International Trade Commission ,831 F.2d 1017 (Fed. Cir. 1987) ..........................................................................51

    Universal Camera Corp. v. National Labor Relations Board ,340 U.S. 474 (1951) ............................................................................................47

    Warner-Jenkinson Co. v. Hilton Davis Chemical Co. ,520 U.S. 17 (1997) ..............................................................................................50

    Statutes

    35 U.S.C. 141 ......................................................................................................... . 1

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    vii

    STATEMENT OF RELATED CASES

    Rambus is unaware of any other appeals or petitions taken in this

    reexamination proceeding. There are, however, a number of different matters

    pending in this Court and other courts that involve the patent-at-issue in this

    appeal, U.S. Patent No. 6,324,120 (the 120 patent).

    1. The following pending case involves the 120 patent.

    a. Rambus Inc. v. Hynix Semiconductor Inc. , No. 5:05-cv-00334-

    RMW (N.D. Cal.) (Whyte, J.).

    2. The following pending cases do not involve the 120 patent but

    involve patents that, like the 120 patent, descend from Application No.

    07/510,898 (the 898 application).

    a. Hynix Semiconductor Inc. v. Rambus Inc. , No. 5:00-cv-20905-

    RMW (N.D. Cal.) (Whyte, J.). This case is on remand from Appeal Nos. 2009-

    1299, -1347, 645 F.3d 1336 (Fed. Cir. 2011).

    b. Micron Technology, Inc. v. Rambus Inc. , No. 1:00-cv-00792-

    SLR (D. Del.) (Robinson, J.). This case is on remand from Appeal No. 2009-1263,

    645 F.3d 1311 (Fed. Cir. 2011).

    c. Rambus Inc. v. LSI Corp. , No. 3:10-cv-05446-RS (N.D. Cal.)

    (Seeborg, J.).

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    viii

    d. Rambus Inc. v. Micron Technology, Inc. , No. 5:06-cv-00244-

    RMW (N.D. Cal.) (Whyte, J.).

    e. Rambus Inc. v. STMicroElectronics, N.V. , No. 3:10-cv-05449-

    RS (N.D. Cal.) (Seeborg, J.).

    3. Several ex parte and inter partes reexaminations involving patents

    descended from the 898 application are pending at the U.S. Patent and Trademark

    Office (PTO). Of those, the following have been appealed to this Court.

    a. In re Rambus Inc. , No. 2011-1247, 694 F.3d 42 (Fed. Cir.

    2012).

    b. Rambus, Inc. v. Rea , No. 2012-1634 (Fed. Cir.) (oral argument

    set for July 11, 2013).

    c. Rambus, Inc. v. Micron Technology, Inc. , No. 2013-1087

    (Fed. Cir.) (briefing not yet complete).

    d. Rambus, Inc. v. Micron Technology, Inc. , No. 2013-1192

    (Fed. Cir.) (briefing not yet complete).

    e. Rambus, Inc. v. Micron Technology, Inc. , No. 2013-1224

    (Fed. Cir.) (docketed).

    f. Rambus, Inc. v. Micron Technology, Inc. , No. 2013-1228

    (Fed. Cir.) (docketed).

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    ix

    g. Rambus, Inc. v. Micron Technology, Inc. , No. 2013-1426

    (Fed. Cir.) (docketed).

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    1

    STATEMENT OF JURISDICTION

    This appeal arises from two inter partes reexamination proceedings before

    the U.S. Patent and Trademark Office (PTO). Micron Technology, Inc.

    (Micron), one of the requesters, appealed the examiners confirmation of the sole

    claim-at-issue to the Patent Trial and Appeal Board (Board). The Board

    reversed the examiners confirmation of the claim on January 19, 2012. The

    parties requested rehearing, and the Board issued a final and appealable decision

    on January 8, 2013. Rambus appealed. This Court has jurisdiction under

    35 U.S.C. 141.

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    2

    I. STATEMENT OF THE ISSUES

    1. Did the Board err in reversing the examiners decision confirming

    claim 33, where the claim requires use of an operation code that includes both a

    read instruction and precharge information, where the Board ignored and dismissed

    the precharge limitation as nonfunctional descriptive material, and where the

    examiner correctly found in this proceeding and in a related proceeding that the

    cited prior art does not disclose the operation-code-including-precharge limitation

    or render it obvious?

    2. Alternatively, did the Board err in reversing the examiners decision

    confirming claim 33, where the examiner correctly found that neither Bennett nor

    the combination of iAPX and iRAM would have rendered obvious a synchronous

    dynamic random access memory device (synchronous DRAM), where the cited

    prior art discloses, at most, only conventional asynchronous DRAMs, and where

    the Board cited no record evidencelet alone substantial evidenceto justify its

    sharp departure from the examiners findings?

    II. STATEMENT OF THE CASE

    Rambus appeals the Boards reversal of the examiners decision confirming

    claim 33 of U.S. Patent No. 6,324,120 (the 120 patent). After a thorough

    review of all the evidence, the examiner properly confirmed claim 33 over the

    cited prior art and rejected Microns obviousness arguments based on Bennett in

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    view of Wicklund, Bowater, or Olson, and iAPX in view of both iRAM and Olson.

    On appeal, the Board misconstrued the claim by essentially ignoring the precharge

    limitation altogether, dismissing it as nonfunctional descriptive material.

    Moreover, the Board erroneously concludeddirectly contrary to the examiners

    findingthat a person of ordinary skill in the art in 1990 would have considered it

    obvious to combine the systems of Bennett or iAPX with an operation code that

    specifies both a read instruction and precharge information (not disclosed in any of

    the cited references) and a synchronous DRAM (also not disclosed in any of the

    cited references). In reaching this conclusion, the Board ignored the evidence

    developed by the examiner and, instead, substituted its own presumed expertise for

    that of the examiner, contrary to this Courts precedent. Accordingly, the Boards

    decision should be reversed.

    III. STATEMENT OF FACTS

    By 1990, when Drs. Farmwald and Horowitz filed their landmark patent

    application from which the 120 patent claims priority, the DRAM device was

    twenty years old, asynchronous, and, as stated by the Board, ubiquitous in the

    industry. (A57.) Every DRAM device, then and today, requires for its operation a

    memory controller that accepts requests to read from or write to memory, translates

    each request into a series of DRAM-specific operations, and commands such

    operations to the DRAM device. It is uncontested that, in the twenty years before

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    1990, no one had conceived of a synchronous DRAM that uses an operation code

    containing both a read instruction and an instruction to optionally precharge after

    reading. Today, virtually all DRAMs are synchronous and, consistent with the

    teachings of the 120 patent, include read/write commands with a precharge option.

    A. Claim 33 of the 120 Patent

    The 120 patent claims priority to Application No. 07/510,898, filed on

    April 18, 1990. (A79.) Claim 33the sole claim-at-issuedepends from claims

    26 and 29. Collectively, these claims recite:

    26. A synchronous dynamic random access memorydevice having at least one memory section including a

    plurality of memory cells, the memory devicecomprising:

    clock receiver circuitry to receive an external clock signal ;

    input receiver circuitry, including a first plurality of inputreceivers to sample block size information synchronouslywith respect to the external clock signal, wherein the

    block size information defines an amount of data to beoutput by the memory device in response to a first operation code ; and

    a plurality of output drivers to output the amount of datain response to the first operation code.

    29. The memory device of claim 26 wherein the inputreceiver circuitry samples the first operation codesynchronously with respect to the external clock signal.

    33. The memory device of claim 29 wherein the first operation code includes precharge information .

    (A110[26:30-65] (emphases added).)

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    B. Background of the Technology-at-Issue

    1. Dynamic Random Access Memory

    The 120 patent is generally directed to the structure, operation, and control

    of Dynamic Random Access Memory devices or DRAMs. DRAMs store

    information in memory cells, which are typically arranged in a two-dimensional

    rectangular array. (A98[1:60-64]; A2413[15].) The array of cells includes

    columns and rows, such that each cell can be accessed using a row/column address.

    (A98[1:60-64]; A2413[15].) Each memory cell contains a capacitor for storing a

    charge representing one bit of information; for example, a charged capacitor may

    represent a 1, while a capacitor with no charge would represent a 0.

    (A98[1:60-64]; A2412-13[13].) A computer typically has many DRAMs

    controlled by a single memory controller. ( See, e.g. , A103[11:11-19] (discussing a

    computer with 100 DRAMs).)

    A central processing unit (CPU) can transfer information to or from a

    memory address using a memory controller. (A2413[17].) The memory

    controller accesses a designated row/column address in a given DRAM and

    performs either a read or write operation. ( Id. )

    Information and control signals flowing between the CPU and the memory

    controller or between the memory controller and the numerous DRAMs can travel

    on one or more buses, each consisting of a series of wires or lines that connect

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    the devices. (A99[3:51-4:34].) Prior-art computers typically had a primary bus

    that connected the CPU to the memory controller and a secondary bus that

    connected the memory controller to an array of numerous DRAMs, as shown in the

    figure below from the Wicklund reference (each set of two-way arrows represents

    a bus).

    (A1732.) A similar setup is shown in the iAPX reference. (A1783 (showing a

    Memory Module consisting of an MCU, or memory control unit attached to

    a primary MACD Bus, and an Array attached by a secondary bus to the

    MCU); see also A2413-14[17-18]; A2427[56]; A2476[56].)

    Generally, instructions traveling along the primary bus are system-wide

    instructions such as instructions to access memory, whereas in the prior art, signal

    transitions on the secondary busbetween the memory controller and the

    individual DRAMsmanaged the detailed operations of the individual DRAMs in

    the memory array. (A2480-81[73].)

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    A focus of the 120 patent is to make the memory system more efficient so

    that data can be transferred faster than was possible in the prior art. (A100[5:31-

    34].) This is accomplished, in part, by (1) employing a synchronous memory

    interface between the memory controller and the DRAMs, i.e., one that utilizes an

    external clock signal to govern memory transactions with the individual DRAMs;

    and (2) using multi-bit operation codes that provide for new combination

    instructions that allow a controller to specify, e.g., both a read operation and

    whether or not the DRAM should automatically precharge as a part of the read

    operation.

    2. Asynchronous Versus Synchronous DRAMChips

    Prior to 1990 (the effective filing date of the 120 patent), conventional

    DRAMs operated asynchronously, i.e., without being synchronized with an

    external clock signal. (A2413[18]; A98[2:44-47].) Read and write operations

    were conducted by the controller driving control signal transitions on specific bus

    lines, where the transitions had to occur in a specific order based on the desired

    operation. (A2413-14[18].) This was considered the most efficient way to access

    information because each DRAM transferred data as soon as possible after being

    instructed to do so. ( See A3249.)

    In contrast, the DRAMs disclosed in the 120 patent are synchronous

    (A79[Abstract]), which means they operate markedly differently from prior-art

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    asynchronous DRAMs. The hallmark of a synchronous DRAM is that an external

    clock signal governs the timing of the read and write operations for all DRAMs on

    the bus, based on when a potentially complex instruction is sent onto the bus.

    (A2414[19]; A99[3:8-11].) In a synchronous system, at least one signal line

    carries an external clock signal, such as the one shown below, which is used to

    synchronize all read and write operations for all the DRAMs on the bus.

    (A101[8:30-31]; A2414[19]; see A101[8:44-59]; A95[Fig. 14].)

    In such a system, the memory controller can issue an operation code

    specifying a read to a particular DRAM at a given clock cycle and further

    specifying that the requested data must be returned a precise number of clock

    cycles later. (A2414-17[19-26].) Then, after that precise number of clock cycles

    has elapsed, that DRAM responds and the controller can check the data on the bus

    lines and know that it is the data associated with the earlier read request. ( Id. )

    Meanwhile, in the intervening clock cycles, the memory controller can issue

    another operation code to another DRAM and start another access while the first

    DRAM is working to process the first read. ( Id. ) In this way, transactions can be

    interleaved and pre-scheduled to occur at certain times, i.e., after a certain

    number of clock cycles. ( Id. ) In contrast, prior-art asynchronous systems could

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    only control one operation at a time because each operation required specific

    control signal transitions at specific intervals throughout the operation (and thus

    tied up the bus for the duration of the operation).

    While it was known prior to 1990 to include a clock on a primary bus

    (i.e., between the CPU and a memory controller), the bus between the memory

    controller and the asynchronous DRAM chips did not include a clock, and the

    DRAM chips were therefore not operated synchronously in the prior art. (A2413-

    14[18]; A2427-28[55-57]; A2475-76[55-56].) Instead, prior-art DRAMs

    typically came in arrays of many DRAMs, each of which was asynchronously

    operated based on bus signal transitions from the memory controller, which in turn

    was connected to a CPU via the primary bus. ( See A2413-14[17-18];

    A2427[56]; A2475-76[55].)

    3. Prior Cases Involving Synchronous MemoryDevices

    In past cases involving other patents in the 120 family, the

    asynchronous/synchronous issue has been extensively litigated. For instance, in

    U.S. Patent No. 6,034,918 (the 918 patent), the claims-at-issue recited a

    synchronous memory device, and this Court held that this term was not limited

    to a single chip memory device. In re Rambus Inc. , 694 F.3d 42, 46-48

    (Fed. Cir. 2012). As a result, this Court concluded that multiple DRAMs and their

    associated memory controller could collectively (in certain circumstances) be

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    considered a memory device. Id. Under this interpretation, even if the

    individual DRAM chips themselves were controlled asynchronously by a memory

    controller, if the entire collection of DRAMs and their memory controller was

    connected by the memory controller to a synchronous primary bus, then the whole

    collection could be considered a synchronous memory device. Id.

    That issue is not present here, however. In this case, claim 33 requires a

    synchronous dynamic random access memory device, as opposed to a generic

    synchronous memory device, as was at issue in the 918 patent. (A110[26:30-

    31]; see A110[26:39] (referring back to the memory device).) The examiner

    construed this limitation to require a single synchronous DRAM chip (A1092;

    A1131-32), and the Board treated the limitation the same way (A55-56 & n.17

    (assuming that single-chip DRAM interpretation applied and explaining that

    Micron concedes that if the preamble is limiting, claim 26 requires a single chip

    DRAM)). Thus, to determine whether a DRAM chip is synchronous or

    asynchronous for purposes of claim 33, one must look to the specific bus to which

    that chip is attached, not some higher-level bus to which its associated controller

    may be attached. If the DRAM chip itself does not receive a clock signal, then it is

    an asynchronous DRAM, regardless of whether there may be synchronous

    components upstream of its controller.

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    4. Precharging of Sense Amplifiers

    DRAMs sense (for reading) or store (for writing) a charge in a given cell

    using a sense amplifier, which is an electrical component that detects and

    amplifies the small amount of charge in a cell corresponding to a 0 or a 1, such

    that the cell can be accessed for a read or write. The 120 patent explains this basic

    configuration as follows, using the conventional terminology of word line and

    bit line for row and column, respectively.

    All modern DRAM, SRAM and ROM designs haveinternal architectures with row (word) and column (bit)lines to efficiently tile a 2-D area. Referring to FIG. 1,one bit of data is stored at the intersection of each word line 5 and bit line 6. When a particular word line isenabled, all of the corresponding data bits are transferred onto the bit lines. This data, about 4000 bits at a time ina 4 Mbit DRAM, is then loaded into column senseamplifiers 3 and held for use by the I/O circuits.

    (A100[5:66-6:7].)

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    (A83.)

    When a row address is sent from the memory controller, the information

    from each cell in that row is sent to the sense amplifiers. This is known as

    open[ing] a row. (A2415-16[23].) In the demonstrative illustration below, the

    sense amplifiers are shown near the bottom of the figure. The third row has been

    opened, so the information from the third row has been copied to the sense

    amplifiers.

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    When a particular column address is sent from the memory controller, the

    column decoder selects the corresponding sense amplifier (assuming only one bit

    read per address) and, depending on whether a read or write is being performed,

    the bit of information in that sense amplifier is read out or a new bit of information

    is written into that sense amplifier. In the illustration below, the memory controller

    has specified that the fourth column in the opened row should be read. Thus, the

    0 stored in the fourth sense amplifier is output to the memory controller.

    Column Decoder

    R o w

    D e c o

    d e r

    0 000000000

    1 111111111

    1 111111111

    0 000000000

    1 111111111

    0 000000000

    1 111111111

    0 000000000

    1 101010001

    Sense

    Amplifiers

    1 101010001

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    Before a new row can be loaded into the sense amplifiers, the current row

    must be closed and the sense amplifiers must be precharged, i.e., their charges

    must be preset to a known voltage level, e.g., between the voltages used to

    represent a 0 and a 1. ( Id. ) Much like a balanced seesaw will respond to slight

    pressure on one side to swing the seesaw, precharging enables the sense amplifiers

    to subsequently detect a logical 1 or 0 based on just a tiny quantity of charge in a

    cell. ( Id. )

    In the art, DRAMs were known to operate in at least two modes: normal

    mode and page mode. (A102[10:15-39].) In normal mode, a new row is

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    opened and then a column address is supplied to access data, as shown in the first

    demonstrative illustration above. ( Id. ) Opening a new row takes time, however,

    which is generally undesirable in very high-speed memory systems. ( Id. ) An

    alternative to a normal mode access is a page mode access, in which data from

    a previously opened row remain in the sense amplifiers from a previous read or

    write, and another column in that same row is accessed without the need to load a

    new row into the sense amplifiers. Page mode accesses are only advantageous,

    however, if the next cell to be accessed is in the same row as the previous cell that

    was accessed. ( Id. )

    In prior-art asynchronous DRAMs, one signal line (Row Address Strobe or

    RAS) was used to open and close rows, and another signal line (Column Address

    Strobe or CAS) was used to control column access operations (i.e., read and

    write) to open a row. Annotated Figure 2 from Bowater (one of the references

    relied on by the Board) illustrates this process:

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    Open RowClose Row,PrechargeRead COL 0 Read COL 1

    (A1740 (annotated).)

    Figure 2 shows row and column control for two banks of DRAM devices A

    and Bboth banks of devices operate similarly, and thus the A operation is

    representative of prior-art asynchronous operation. At transition 41, the controller

    transitions RAS A low, causing a row at address ROW to be opened. After

    allowing enough time for the sense amplifiers to sense the row data, the controller

    transitions CAS A low, causing a read at address COL 0 of ROW and data 0 to be

    output onto the DATA lines. The controller then transitions CAS A high, causing

    data 0 to no longer be driven onto the DATA lines. The controller later transitions

    CAS A low again, causing a second read at address COL 1 of ROW and data 2 to

    be output. The controller then transitions CAS A high, causing data 2 to no longer

    be driven onto the DATA lines. Finally, the controller transitions RAS A high,

    closing ROW and precharging the sense amplifiers.

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    Notably, the controller in Bowater must hold RAS low throughout the entire

    time that column operations are performed, or else the sense amplifiers will be

    precharged prematurely and the column operations will not be performed correctly.

    Thus, because a read or write operation requires that RAS be held low while CAS

    transitions low, it would be impossible to also simultaneously signal a precharge

    operation by driving RAS high. In other words, asynchronous devices require, as

    shown above, that the controller hold RAS low and that no precharge signaling be

    initiated until the column operations have completed.

    The memory device recited in claim 33 of the 120 patent operates

    differently from the prior art. Instead of using the prior-art method of dedicating a

    RAS line that must be held low from the time a row is open until the time that row

    is closed, the 120 patent teaches that a combination instruction or operation

    code can be used. This combination instruction can include, among other things,

    an indication to read or write as well as precharge information, such that the

    DRAM already knows whether or not to perform a precharge operation in

    conjunction with the read/write operation, without the need for a separate

    instruction as was required in the prior art. (A102-03[10:40-11:45].) Such

    precharge information in a synchronous DRAM allows the bus to be used only

    briefly and only once per read/write request, whereas prior-art devices had to hold

    RAS low until column operations were completed, effectively tying up the bus

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    until a precharge was possible. Thus, in contrast to the prior art, the claimed

    devicein which read instructions are combined with precharge information in an

    operation codeallows the bus to be freed up to preschedule other operations.

    (See A2416[23] (Mr. Murphy explaining that auto-precharge helps free up

    control bandwidth, whereas a dedicated precharge command consumes additional

    bandwidth).)

    C. The Unrebutted, Objective Evidence of Nonobviousness

    The invention recited in claim 33 of the 120 patent, including the novel use

    of synchronously controlled DRAM chips to improve speed and efficiency,

    achieved tremendous commercial success and widespread acceptance in the

    industry. (A2459[11].) Indeed, Rambuss synchronous DRAM technology was

    widely considered revolutionary in the industry. (A2785[91]; see also A3224

    (stating in March 1992 that Rambus had a revolutionary memory chip technology

    . . . offer[ing] a tenfold speed boost to memory chips); A3241; A3248; A3252;

    A3229 (describing Rambuss approach a fundamental change in the design of

    computer memory systems).) Moreover, based on his pioneering efforts in

    developing synchronous memory device technology, Dr. Horowitz, one of the

    inventors, received an IEEE award and was elected to the National Academy of

    Engineering. (A3211; A3214; A3216.) His research has changed the way an

    entire industry thinks about memory interfaces and fostered a revolution in that

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    industry. Memory access bandwidths have increased by more than an order of

    magnitude in just a few years as a result of the ideas he pioneered. (A3212; see

    also A3216.)

    As Mr. Murphy also explained, Drs. Farmwald and Horowitzs solutions to

    the bottleneck problem were received with skepticism by many experts in the field

    at the time they conceived the invention, but this skepticism was eventually

    proven wrong, as a majority of the memory devices available today (e.g., DDR,

    DDR2, DDR3, SDRAMs) employ features that are claimed in the 120 patent.

    (A2459[12]; see also A2787[105] (The response to the early presentations in

    1989-90 was just disbelief that Drs. Farmwald and Horowitz would be able to

    achieve a 500 megabit per second DRAM data rate.); A3234 (potential licensees

    expressed concern whether a computers drivers and receivers could work at these

    frequencies); A3247 (system companies were skeptical that [Rambus could]

    operate reliably at these speeds).)

    Notably, Micron did not submit any expert declarations or other evidence

    rebutting these facts.

    D. The Prior Art-at-Issue

    The Board found claim 33 obvious in view of (a) Bennett in combination

    with Olson, Bowater or Wicklund; or (b) iAPX and iRAM in combination with

    Olson. Each of these references will be discussed briefly below.

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    1. Primary References

    a. Bennett

    Bennett discloses a mainframe computer system, circa 1982. (A1335.) The

    reference focuses on the interface between a primary bus, called the Versatile

    Bus, and various different types of Users connected to it. (A1335[Abstract];

    A2475-76[55].) Bennetts Figure 38, reproduced below, shows four such Users

    connected to a V Bus or Versatile Bus.

    (A1360.) At 396 pages long, Bennett discusses many different types of Users that

    can be connected to the primary bus and many different attributes of the primary

    interface. (A2475-76[54-58]; see A1335-730.) It does not disclose DRAMs,

    however, nor does it disclose precharging or anything related to precharging.

    (A2478[63-64]; A2480-81[70-74]; see A55-58.)

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    b. iAPX

    iAPX discloses a system that includes a primary bus connected to memory

    cards, wherein each memory card consists of a memory controller connected to

    multiple asynchronous DRAMs, as was conventional in the prior art. As shown in

    iAPXs Figure 1-2, the primary MACD Bus is connected to a Memory

    Module, or memory card. (A1783.) The Memory Module consists of an MCU

    (memory control unit) attached by a secondary bus to an Array of asynchronous

    DRAMs.

    ( Id. ) Thus, iAPX does not disclose any DRAMs synchronously connected to the

    primary bus, or even connected to the primary bus at all. ( See A2426-29[54-59];

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    A2460-63[15-18].) Nor does it disclose precharging or anything related to

    precharging. ( See A2442[105].)

    c. iRAM

    iRAM similarly does not disclose synchronous DRAMs or anything related

    to precharging. iRAM discloses an integrated RAM, or iRAM. (A2135.) It

    teaches integrating a dynamic RAM and its control and refresh circuitry on one

    substrate, creating a chip that has dynamic RAM density characteristics, but looks

    like a static RAM to users. ( Id. ) iRAM thus discloses combining one DRAM

    chip with its refresh circuitry. It does not suggest that this chip should be

    synchronous with any clock; and, indeed, the chip has no circuitry to receive a

    clock input. ( See infra III.E.2.b; cf. A61.)

    2. Secondary References

    The Board relied on Olson, Wicklund, and Bowater as secondary references

    to show the claimed precharge limitation. Those references all disclose

    conventional, asynchronous DRAMs. (A2441-42[104]; A2483[82-83];

    A1763[2:49-68]; A1733[2:62-66]; A2482[79]; A1738[Abstract].) Thus, none of

    them discloses synchronous operation codes provided to a DRAM for any purpose,

    much less a single operation code that combines both a read instruction and

    precharge information, as recited in claim 33.

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    a. Olson

    Olson is designed to solve a specific problem, in which prior-art systems

    always precharged after a host idle cycle, preventing a page-mode access.

    (A1763[1:24-36].) Thus, Olson discloses a memory system using conventional,

    asynchronous DRAMs, in which a memory controller does not precharge the sense

    amplifiers if the system is idle, to allow the next access to be to the same row.

    (A1763[1:8-14].) Thus, the precharge signaling in Olson, like that of any

    conventional asynchronous DRAM, is sent separate from the read/write signaling,

    not in any operation code combining the two instructions. ( See A3466.)

    b. Wicklund

    Wicklund discloses a memory system using conventional, asynchronous

    DRAMs, in which a memory controller guesses whether to precharge the sense

    amplifiers of the asynchronous DRAMs based on prediction algorithms.

    (A1734[3:6-9, 4:4-25].) Wicklund includes asynchronous read/write signaling to

    the DRAMS, and whether to precharge is determined separately by the memory

    controller using an algorithm and is triggered by separate and distinct

    asynchronous precharge signaling (issued by the memory controller to the

    asynchronous DRAMs) that is not combined with any read/write signaling.

    (A2481-82[76-77].) Thus, any precharge signaling in Wicklund is necessarily

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    sent by the memory controller separate from the read/write signaling. (A3538;

    A3553.)

    c. Bowater

    Bowater also discloses a memory system using conventional asynchronous

    DRAMs and a timing-based algorithm in a memory controller for determining

    special circumstances when precharging is required. In contrast to Wicklund, the

    memory controller in Bowater opens a row and keeps it open until a certain

    amount of time passes. ( See A3540.) In other words, Bowater assumes that,

    regardless of what the previous access was, the next access will be in the same

    row. (A1752[7:54-56].) If the next access is not in the same row, just like in other

    prior-art asynchronous DRAMs, Bowater closes the row (thereby incurring a time

    penalty, see A102[10:33-36]), and the sense amplifiers are then precharged. If

    multiple accesses are in the same row, Bowater waits for a specified amount of

    time and then closes the row, on the premise that the row should only be left open

    for a limited period of time to preserve the integrity of data in an open row, even if

    the next access is to the same row. (A1752[7:54-8:8].) Bowater cannot send

    precharge information with read/write signaling, as discussed in the preceding

    section, because RAS must be held low during read/write signaling and high to

    initiate precharge. Thus, Bowater does not disclose the concept of combining

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    read/write signaling and precharge information and does not disclose providing a

    combination operation code to DRAMs.

    E. The Proceedings Below

    1. The Examiners Determination of Nonobviousness

    After thoroughly considering all of the asserted prior art, including Bennett,

    iAPX, iRAM, Olson, Wicklund, and Bowater, and after duly considering all of

    Microns arguments, the examiner concluded that none of the cited art renders

    claim 33 obvious. In particular, the examiner found that none of the art discloses

    or renders obvious a synchronous DRAM, as required by claim 33.

    Furthermore, in this proceeding and in an earlier reexamination involving a related

    patent with the same specification, the examiner concluded that none of the prior

    art discloses or renders obvious an operation code that contains both a read

    instruction and precharge information, as required by claim 33.

    a. The Examiner Found in This Proceeding and in aRelated Proceeding that the Cited Prior Art Does NotDisclose or Render Obvious an Operation CodeContaining Both a Read Instruction and PrechargeInformation

    In affirming claim 33 in this reexamination, the examiner primarily focused

    on the fact that the prior art fails to disclose or render obvious the synchronous

    DRAM limitation. ( See A1187-90 (not maintaining proposed rejections to claim

    33 [f]or the reasons set forth above, i.e., failure to disclose synchronous

    DRAM).) However, based on the full context of the proceedings below and related

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    proceedings, it is clear that the examiner also found no disclosure in the cited prior

    art of an operation code containing both a read instruction and precharge

    information, as required by claim 33.

    For instance, in discussing the precharge issue with respect to claim 7 of the

    120 patent, the examiner stated that the same operation code that includes

    precharge information is the same operation code th[at] contains [an] instruction to

    perform a first operation. The claim specifically requires the same operation code

    to indicate this information. (A1133.) The examiner had explained that, for both

    claims 7 and 33 ( see A3380), although Olson disclosed precharge information,

    neither iAPX nor Olson showed whether this precharge information [is] sent

    along with the first operation code. As noted in the claims the first operation code

    must cause the memory device to perform a read operation (A3465-66). Thus, the

    examiner found that neither iAPX nor Olson discloses the operation code

    containing precharge as required by claim 33. ( See also A1173-74 (stating that

    Issue 11, which addresses iAPX and Olson as applied to claim 33, A1088, is not

    maintained [f]or the reasons noted above . . . and in the [Action Closing

    Prosecution], cited supra ).)

    Similarly, in the reexamination of a related patent, U.S. Patent No.

    6,584,037 (the 037 patent), which has the same specification as the 120 patent,

    the same examiner extensively discussed the prior arts failure to disclose an

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    operation code containing both a read/write instruction and precharge information.

    Specifically, in the 037 patent reexamination, as here, it was an accepted fact that

    neither Bennett nor iAPX nor iRAM discloses the recited operation code that

    contains both a read/write instruction and precharge information. (A3621[ll.7-10];

    A3528-30; A3466; A58; A62-63.) Indeed, as Micron conceded in its request for

    the present reexamination, none of these references discusses precharging at all.

    (A2274 (explaining that Olson is combined with the iAPX Manual and iRAM to

    supply the teaching that the operation code disclosed in the iAPX Manual includes

    precharge information); A2286-90 (Microns reexamination request not alleging

    any disclosure of precharging in Bennett).)

    In the related 037 reexamination, the examiner found that Olson, Wicklund,

    and Bowater do not disclose the claimed operation code containing both a

    read/write instruction and precharge information. (A3581; A3530-31.) Thus,

    although the examiner found that Bennett generically discloses an operation

    code (A3552), he found that no reference discloses or suggests the claimed

    operation code containing both a read/write instruction and precharge information,

    and he further found that such an operation code would not have been obvious to a

    person of ordinary skill in the art in 1990 (A3553; A3556-57). 1

    1 The Board reversed that finding, and that issue is currently the subject of Appeal No. 2013-1087, now pending before this Court.

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    With respect to Olson, the examiner found that it did not disclose whether

    this precharge information is included in the same operation code as the request for

    sampling data to be written. (A3530.)

    With respect to Wicklund, the examiner explained in the 037 reexamination

    that [t]here is no indication [in Wicklund] that precharge is automatically

    performed after data is written. (A3536-37; see also A3538 ([Wicklund] does

    not disclose . . . [a] precharging instruction [that] came within the same operation

    code as the specifying of the sampling of the data to be written . . . .); see also

    A3550; A3553.) Thus, as the examiner found, in Wicklund, page mode is

    automatically turned on or off based on a prediction of whether or not the next

    access will be at the same DRAM row address as the last one. (A3538.) This is

    different from the claimed invention, which receives and responds to a first

    operation code that includes a read (data output) instruction and precharge

    information. ( Id .)

    Regarding Bowater, the examiner found in the 037 reexamination that

    Bowater does not disclose the claimed operation code that includes both a

    read/write instruction and precharge information. (A3540-01 (Bowater does not

    disclose that such precharge information is included in an operation code that also

    indicates a write operation as recited in claim 34 since Bowater is respon[ding] to a

    counter and not an instruction that is included with a same operation code that

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    includes a specify[ing] of sampling data to be written.); see also A3556.) Instead,

    Bowater has a timer, and, after a certain amount of time, the row is closed and the

    sense amplifiers are precharged in response to independent signaling to precharge

    that is given to the DRAM separate from any read or write signaling. (A3540-01;

    A3556; A2482[78-80].)

    The examiner further explained in the 037 reexamination that one would

    not have been motivated to include the precharge information of Bowater in an

    operation code. Specifically, he found that the precharge indication of Bowater is

    based on a counter and there is no support for including this information along

    with [a] write request since that would defeat the purpose of the essential counter.

    (A3541.) As he further explained, [i]f Bowater provides precharge information

    that will automatically precharge after writing data, Bowater would not be able to

    change the time since the instruction would have already been sent. (A3542.)

    In the present reexamination, the only expert testimony proffered on the

    precharge issue was that of Mr. Murphy, Rambuss expert. He explained that it

    would not have been obvious at the time of the invention to combine a read/write

    instruction with precharge information into a single operation code, as required by

    claim 33. For example, he explained that, in Bennetts mainframe computer

    system, high-level instructions (such as a read or write instruction) and low-level

    operations (such as a precharge operation) would be generated by different parts of

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    the system. ( See A2480[70] ( Bennett is not focused on memory devices, let

    alone DRAMs, and therefore it does not provide any disclosure about specific

    DRAM functions such as precharging.); A2480[73] ([T]he localized operation

    of precharging DRAMs after the completion of a row access is not something that

    would be handled by the processors in Bennett that generate requests to memory

    as those processors would not be aware of the page boundaries [i.e., which row

    particular data are stored in] for the particular memory devices within the memory

    modules of Bennett .).) Mr. Murphy explained that the same is true of the iAPX

    and iRAM systems. (A2427-29[56-59]; A2467[31]; A2470[38].)

    Consistent with Mr. Murphys testimony, in Olson, Wicklund, and Bowater,

    precharge signaling is generated by the memory controller, whereas read and write

    requests are generated by the CPUa higher-level processor. Thus, as

    Mr. Murphy explained, if DRAMs were implemented in Bennett at all (despite not

    being taught), instructions to write and signaling to precharge would have been two

    different functions, originated by two different parts of the system. (A2480-

    81[70, 73]; see also A2427[56].) Micron submitted no expert evidence

    rebutting this testimony of Mr. Murphy. Indeed, Micron submitted no expert

    testimony at all during this reexamination proceeding.

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    b. The Examiner Found that the Cited Prior Art DoesNot Disclose or Render Obvious a SynchronousDRAM

    The examiner also found claim 33 of the 120 patent nonobvious based on

    the prior arts failure to disclose a synchronous DRAM. The examiner construed

    synchronous dynamic random access memory device to be limited to a single

    chip, such that it is an integrated synchronous interface for a DRAM. (A1145;

    A1092; A1131-32.) In arriving at this construction, the examiner relied on the

    120 patents specification, which makes clear that a synchronous DRAM device is

    a single chip. (A1131-32 (quoting A99[4:21-34]).) The Board did not dispute this

    construction. 2 (A56 n.17.)

    Based on this essentially undisputed construction, the examiner determined

    that a person of ordinary skill in the art in 1990, reading Bennett (which does not

    disclose DRAMs) or iAPX in view of iRAM (which both disclose only

    conventional asynchronous DRAMs) would not have been motivated to operate a

    single DRAM chip synchronously, as required by claim 33. (A1134-36; A1140;

    A1177-81.)

    2 Micron argued that the term synchronous dynamic random access memorydevice was not limiting because it is recited only in the claims preamble. (A56n.17.) But, as the Board pointed out, the body of the claim refers back to the

    preamble by reciting the memory device. ( Id. ) The Board found Micron had conceded that, to the extent synchronous DRAM is a claim limitation, it requiresa synchronous DRAM chip . ( Id . (citing A3318).) Indeed, Micron never raised thatargument in its opening brief to the Board. (A2326-70.)

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    With respect to Bennett, although it discloses many possible Users that

    can be connected to the synchronous Versatile Bus, it is undisputed that it does not

    disclose DRAM devices as Users, even though DRAMs existed at the time of

    Bennetts filing. (A2478[63]; A2413[15].) Micron argued, however, that one of

    the disclosed Users in Bennettthe so-called large memory Usercould

    hypothetically be made up of DRAMs, such that DRAMs are either inherent or

    obvious. (A2284; see A2333-37.) The examiner addressed this argument and

    correctly concluded that any such DRAMs used in Bennett would be

    asynchronous , rather than synchronous as required by claim 33. (A1140.)

    The only DRAMs in use at the time of the claimed invention were

    asynchronous DRAMs. (A2413[18].) For instance, besides Bennett, which does

    not disclose DRAMs at all, all five of the other prior-art references relied on by the

    Board disclose only asynchronous DRAM-based systems. The most common way

    of using DRAMs at that time was by connecting many DRAM chips (i.e., an

    array) to a secondary bus having a dedicated memory controller. ( See, e.g. ,

    A2475-78[54-64]; A1732; A2426-28[53-58]; A2460-63[15-17];

    A2482[80]; A2483[83]; A2413-14[18].) That whole group , i.e., the

    asynchronous DRAMs along with the secondary bus and a memory controller

    (collectively called a memory card or module), was then connected by the

    controller to a primary bus. (A2475-76[55].) As the examiner correctly found,

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    such a configuration would not meet the synchronous DRAM limitation because

    this limitation requires a single DRAM chip that operates synchronously

    (as opposed to multiple asynchronous chips that are connected to a memory

    controller that, in turn, is connected synchronously to a primary bus). (A1145;

    A1092; A1131-32.)

    Indeed, an expert retained by Micron conceded in litigation that Bennetts

    large memory, to the extent it could be made up of DRAMs, would have been

    composed of multiple chips. (A3683 (emphasis added).) And Samsung, the other

    party that initially requested reexamination, made the same point in its request for

    reexamination of the 037 patent, i.e., that Bennetts large memory necessarily

    would have been made of multiple chips. (A3764; see also A2475-76[55].)

    Consistent with these admissions, Bennett discloses that the large memory

    includes up to 2 32 addresses of 32-bit words (A2475-76[55] (citing A1637[95:58-

    59])), a number that even now cannot be contained on a single DRAM chip

    (see A2413[15]).

    Moreover, as Mr. Murphy explained in an unrebutted declaration, Bennetts

    architecture would not permit individual DRAM chips to be connected directly to

    Bennetts primary bus. Specifically, Mr. Murphy testified that Bennett describes

    the VBI (or primary bus) as being designed to accept complex connections,

    containing many different pins. (A2476-77[58-62].) If a single DRAM chip

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    were to be connected to the primary bus, it would have to contain all of those pins

    and the complex circuitry that goes with them. ( Id .) Mr. Murphy explained that

    DRAMs were desirable specifically because they were small and cheap, and

    adding so many pins and so much circuitry would have made each DRAM chip

    large and expensive, and therefore undesirable. ( Id. ; see also A1593[8:10-12].)

    Given all this evidence, the examiner concluded that Bennett did not

    disclose or render obvious a synchronous DRAM chip. With respect to the size of

    Bennetts large memory, the examiner stated that he

    was not ab[le] to find any disclosure in Bennett thatwould show that a single integrated memory chip (i.e. theclaimed synchronous dynamic random access memorydevice) would support the noted address [i.e., size]requirements. Thus, even if one would have considered that it would have been obvious to have a DRAM based memory device, the disclosure of Bennett does notdisclose that the relied up[on] memory device that is thememory device that is on the same substrate as theVersatile Bus Interface, would be a DRAM.

    (A1140.) Instead, according to the examiner, Bennetts 2 32 addresses of 32 bit

    words (A1637[95:58-60]) support only multi-DRAM memory cards and the

    like (A1140). The examiner therefore found Bennett does not anticipate or render

    obvious the claimed synchronous DRAM chip. ( Id. )

    As for the proposed iAPX/iRAM combination, the examiner found it would

    not have been obvious to combine iAPX Manual with iRAM . . . . (A1187.) The

    examiner relied in part on testimony from Intels architects of the iAPX system,

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    who stated that the DRAMs of iAPX were designed to be interchangeable with

    other types of memory devices. According to Intels designers, replacing the

    whole memory card of iAPX with a single iRAM chip would defeat that goal of

    iAPX since the MCU [memory control unit] would have to be physically removed

    and placed into each individual iRAM. (A1178; see also A1177.)

    The examiner concluded that

    nothing within the references indicate[s] that anintegrated MCU and DRAM in iAPX would be

    predictable to one of ordinary skill in the art given thefact that iAPX designers sought to separate the MCUfrom the storage array so that different types of DRAMscan be used. The Examiner finds that based on thesubmitted testimonies and declaration the combinationwould not have been predictable and would teach awayfrom having a system which would be flexible in usingdifferent types of DRAMs.

    (A1179-80.)

    The examiner also concluded that replacing the memory card of iAPX with

    individual iRAM chips connected to the primary bus would defeat several other

    goals of iAPX and render the system inoperable. (A1180-81.) For instance, the

    examiner agreed with Rambus that

    integrating a memory control unit onto each of thememory devices would prevent any one of the memorycontrol units in the system from having the perspectiveon the data and [error checking and correction]information stored in the array that would allow for theerror detection and correction to occur. The proposed

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    integration would, therefore, render the iAPX 432 systeminoperable.

    (A1180 (emphasis added) .) The examiner further agreed with Rambus that the

    combination would prevent the use of iAPXs spare DRAM chip, which can be

    used to replace a defective DRAM in the array if the memory control unit detects

    such a faulty device. ( Id. ) Without a global perspective on the array, a

    perspective which would no longer exist if the memory control unit were

    integrated onto each of the DRAMs, the ability to utilize the spare DRAM device

    would be eliminated. (A1181.)

    2. The Boards Reversal of the Examiners DecisionConfirming Claim 33

    a. The Board Construed Precharge Information asNonfunctional Descriptive Material and Rejectedthe Examiners Findings Regarding Precharging

    In its decision on appeal, the Board spent less than two pages discussing the

    precharge limitation in combination with Bennett (A58-59), with even less analysis

    with respect to adding precharge information to the combination of iAPX and

    iRAM (A62-63). On rehearing, the Board simply rehashed its conclusions

    regarding both sets of combinations. (A25-29.)

    As part of its analysis, the Board determined that claim 33s recitation of

    precharge information constitutes nonfunctional descriptive material, which

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    cannot be used to distinguish the prior art. (A59; A62; A26.) For example, in

    discussing the iAPX/iRAM combination, the Board held:

    [T]he type of information added to the first operationcode in claim 33, in this case, precharge information,constitutes nonfunctional descriptive material, becauseclaim 33 does not require the device to precharge, decideto precharge, or to have the ability to do either (i.e., tooperate differently based on the precharge informationversus some other type of information). Suchnonfunctional descriptive material concerninginformation which the claimed device need not even

    process to render a distinct decision fails to render claim

    33 patentably distinct over [the prior art].

    (A62; see also A59; A26.)

    In the alternative, the Board found (contrary to the examiners findings) that

    combining precharge information with a read instruction in either Bennett or the

    iAPX/iRAM combination would have been obvious to a person of ordinary skill in

    the art in 1990. For Bennett, the Board found (contrary to the examiner) that

    Wicklund shows . . . that precharge normally (i.e., when the DRAM is not in page

    mode) occurs at the end of a read or write function, showing the obviousness of

    banding the two related functions into Bennetts write code. (A58; see also A26.)

    Notably, however, the Board failed to point to anything in the record (other than

    attorney argument contained in Microns briefs) to justify this sharp departure from

    the examiners findings, nor did the Board address the stark conflict between its

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    personal view and the fact that a read and a precharge are necessarily separate

    operations in prior-art DRAMs.

    Similarly, for the iAPX/iRAM combination, the Board stated in conclusory

    fashion that sending one operation code with information as required to perform

    certain read operations would have been obvious for the purpose of keeping related

    read control information together in an existing (or modified) iAPX operation

    code. (A62-63.) On rehearing, the Board merely added that skilled artisans

    would have recognized that an iAPX modified controller would have had sufficient

    perspective to send a precharge signal to an integrated DRAM in the same code

    as the read signal since the precharge signal normally would have followed the

    controllers read signal in prior art systems. (A29.) Again, the Board failed to

    point to any evidence in the record to justify this sharp departure from the

    examiners finding of nonobviousness.

    b. The Board Reversed the Examiners FindingsRegarding the Nonobviousness of SynchronousDRAMs in 1990

    The Board also reversed the examiners finding that neither Bennett nor

    iAPX/iRAM renders the synchronous DRAM limitation obvious. Regarding

    Bennett, the Boards only analysis entailed explaining that DRAMs were

    ubiquitous, so one of ordinary skill in the art allegedly would have known to use

    individual synchronous DRAMs as the large memory. (A56.) First, the Board

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    accepted, at least for purposes of argument, the examiners construction of the

    synchronous DRAM term, requiring synchronous DRAM to be a single DRAM

    chip that receives a clock signal and is connected synchronously to a bus. (A56

    n.17.) The Board then found that, because (in the Boards view) Bennett generally

    discusses attaching memory chips other than DRAMs to the bus, it would have

    been obvious to connect a single DRAM chip directly to Bennetts primary bus and

    operate it synchronously. (A57-58.) Thus, notwithstanding Bennetts failure to

    disclose DRAMs at all, and notwithstanding that the only DRAMs in use at the

    time were asynchronous DRAMs, the Board concluded that synchronous DRAMs

    would have been obvious. The Board relied on an implicit motivation to

    improve the technology, since (in hindsight) the 120 patents synchronous DRAM

    technology has proven to be faster than the prior-art asynchronous DRAM

    technology. (A57 n.18.)

    On rehearing, the Board repeated its assertions that Bennetts generic

    synchronous single-chip memory disclosure and Rambuss concession that

    DRAMs were a well-known, if not dominant, type of memory chip render obvious

    the claimed combination. (A21 (citation omitted).) The Board then specifically

    addressed Rambuss argument that Bennetts large memory was intended to hold

    up to 2 32 addresses, which is much more than can be held on a single DRAM chip,

    even today. The Board first relied on the non sequitur that the claims of the

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    120 patent do not require 2 32 addresses, even though Rambuss argument was

    based on Bennetts implicit suggestion that the large memory would necessarily

    consist of more than just a single DRAM chip. ( Id. ) Alternatively, the Board

    reasoned that Bennett specifically contemplates less address space in chips having

    a small number of pins, relying on the disclosure of up to 232 addresses, and it

    further reasoned that Bennett contemplates large address space in future memory

    chips. (A21-22.)

    The following annotated figures from Wicklund (top (A1732)) and Bennett

    (bottom (A1360)) summarize the Boards holding regarding synchronous DRAM:

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    As illustrated above, Rambus presented evidence (including admissions by Micron

    and Samsung, and the unrebutted testimony of Mr. Murphy) that, to the extent

    DRAMs would be used at all in Bennett, they would have been incorporated as

    shown above in red ( see arrow pointing to Device D), i.e., an entire array of

    asynchronous DRAMs and their controller would be attached to Bennetts primary

    bus. As the examiner correctly found, such a configuration would not meet the

    synchronous DRAM limitation because the individual DRAM chips would still

    be asynchronous (i.e., asynchronously connected to their controller), just as they

    were in the prior art. The Board found, however, that it would have been obvious

    in 1990 to follow the blue path above ( see arrow pointing to Device C) by

    attaching an individual DRAM chip directly to the synchronous Versatile Bus of

    Bennetts mainframe computer system (even though the Versatile Bus must then

    support new functions never supported on a synchronous bus, such as precharge

    and refresh).

    With respect to the combination of iAPX and iRAM, the Board again

    foundcontrary to the examiners findingthat the iAPX/iRAM combination

    rendered synchronous DRAMs obvious. It is undisputed, however, that iAPX

    discloses only asynchronous DRAM chips attached to a memory controller, and

    that the memory controller provides the interface with the primary bus. (A47.)

    With respect to iRAM, despite no one (neither Micron nor the examiner) arguing

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    that iRAM discloses synchronous DRAM chips, and contrary to the abundant

    evidence that the iRAM chip was not designed to even receive a clock input, the

    Board determined that iRAMs reference to a synchronous 2187 iRAM meant

    that [t]he iRAM may be synchronous in the sense of the 120 patent. (A54;

    see A61 (The iRAM solution also includes synchronous iRAMs, similar to the

    synchronous MCU operation (under the rejection of claim 1). (citing A54)).)

    As Rambus explained, however, and as the examiner correctly found,

    iRAMs reference to synchronous means something entirely different from the

    claimed synchronous DRAM. Indeed, even Micron never argued that iRAM

    discloses a synchronous device within the meaning of claim 33. (A2266-67;

    A2275; A2346-50 & n.10.) And with good reasonthe iRAM reference shows

    that there is no clock signal that reaches the allegedly synchronous chip. Instead,

    as shown in iRAMs Figure 26, the 2187 iRAM chip (highlighted in pink) receives

    only conventional transition-based signalssuch as chip enable (CE) and write

    enable (WE)and does not receive any clock signal (CLK), such as the one

    received by the separate 8051 chip (highlighted in green).

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    (A2170 (highlighting added).)

    Indeed, the European Patent Office (EPO) looked at the iRAM reference

    and concluded that, although iRAM contain[s] a device labelled as Synchronous

    2167, that use of the term synchronous has nothing to do with a synchronous

    bus protocol controlled by a clock signal as claimed. (A3310[11].) Rather, as

    the EPO explained, the synchronous versus asynchronous descriptions in

    iRAM refer to whether refreshing is done autonomously or through a separate

    input. (A3311[11].) It thus concluded that [n]one of the disclosed iRAM

    devices has a synchronous bus interface in the sense of the present invention, with

    an external clock signal provided to the device. ( Id .; see also A2464[21]

    (Mr. Murphy explaining same thing).)

    On rehearing, after Rambus explained these facts, the Board nevertheless

    maintained its incorrect finding, stating that [t]he cited iRAM page describes

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    synchronous 2187 iRAM . . . running at 10MHz by utilizing a method known as

    clock stretching. (A28 (quoting A2169).) But the Board cited no evidence

    (nor is there any evidence in the record) suggesting that iRAM contemplated a

    synchronous DRAM, as recited in claim 33.

    As for the examiners finding that it would not have been obvious to

    combine iAPX Manual with iRAM (A1187) and his specific finding that such a

    combination would render iRAM inoperable (A1180), the Board dismissed these

    findings as not persuasive yet failed to cite any record evidenceother than

    attorney argument contained in Microns briefsto support this sharp departure

    from the examiners findings and conclusions (A61).

    IV. SUMMARY OF ARGUMENT

    The Board erred in reversing the examiners finding that claim 33 is

    nonobvious in view of the cited prior art. First, the Board erred as a matter of law

    in construing the precharge information limitation of claim 33 as nonfunctional

    descriptive material, essentially eliminating the limitation altogether, contrary to

    this Courts precedent. Second, the Board erred in substituting its own presumed

    expertise for that of the examiner in determining (as an alternative to its

    nonfunctional claim-construction ruling) that it would have been obvious in

    1990 to include a read instruction and precharge information in the same operation

    code, notwithstanding that asynchronous devices cannot signal read operations and

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    precharge operations at the same time, that none of the cited prior art discloses

    synchronous DRAM operation codes, and that the examiner found the concept was

    not obvious in 1990.

    Third, the Board erred in reversing the examiners finding that neither

    Bennett nor the combination of iAPX and iRAM would have rendered a single-

    chip synchronous DRAM obvious to a person of ordinary skill in the art in 1990. 3

    The Boards reliance on its own presumed expertise and on Microns attorney

    argument does not constitute substantial evidence, nor does it justify disregarding

    the examiners detailed and explicit factual findings on this issue.

    V. ARGUMENT

    A. Standards of Review

    1. Claim Construction Is Reviewed de Novo

    [C]laim construction by the PTO is a question of law that [this Court]

    review[s] de novo . In re Baker Hughes Inc. , 215 F.3d 1297, 1301 (Fed. Cir.

    2000).

    3 The Court need not reach this issue if it reverses the Board on the prechargelimitation.

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    2. Factual Findings of the Board Are Reviewed forSubstantial Evidence Based on the Entire Record,Including Any Findings of Fact Made by theExaminer

    This Court reviews factual findings of the Board for substantial evidence,

    based on a review that is confined to the factual record compiled by the Board.

    In re Gartside , 203 F.3d 1305, 1315 (Fed. Cir. 2000). Under the substantial

    evidence standard of review, [the Court] search[es] for evidence, clearly set forth

    in the record below, to justify the conclusions that the Board has drawn. Brand v.

    Miller , 487 F.3d 862, 868 (Fed. Cir. 2007). This Court has also expressly held

    that the Boards opinion must explicate its factual conclusions, enabling [the

    Court] to verify readily whether those conclusions are indeed supported by

    substantial evidence contained within the record. Gartside , 203 F.3d at 1314

    (citing Gechter v. Davidson , 116 F.3d 1454, 1460 (Fed. Cir. 1997)).

    The record in an inter partes reexamination proceeding includes any findings

    of fact made by the examiner. Thus, regardless of whether the Board adopts or

    incorporates the examiners findings into its opinion, all of the examiners findings

    must be considered part of the record on appeal and must be given appropriate

    weight in determining whether the Boards decision is supported by substantial

    evidence. See id. at 1312 ([S]ubstantial evidence review involves examination

    of the record as a whole , taking into account evidence that both justifies and

    detracts from an agencys decision. (emphases added) (citing Universal Camera

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    Corp. v. NLRB , 340 U.S. 474, 487-88 (1951) )); see also St. Clair Intellectual Prop.

    Consultants, Inc. v. Canon Inc ., 412 F. Appx 270, 276 (Fed. Cir. 2011)

    (unpublished) (stating that an examiner in reexamination can be considered one of

    ordinary skill in the art).

    3. The Board Cannot Simply Rely on Its Own Expertise;It Must Point to Concrete Evidence in the Recordto Support Its Findings

    In Zurko , this Court made clear that, in determining patentability, the Board

    cannot simply rely on common sense or its own expertise without pointing to

    specific factual support in the record:

    With respect to core factual findings in a determinationof patentability, however, the Board cannot simply reachconclusions based on its own understanding or experienceor on its assessment of what would be basicknowledge or common sense. Rather, the Board must

    point to some concrete evidence in the record in supportof these findings. To hold otherwise would render the

    process of appellate review for substantial evidence onthe record a meaningless exercise.

    In re Zurko , 258 F.3d 1379, 1386 (Fed. Cir. 2001) (footnote omitted); accord

    Brand , 487 F.3d at 869 ([I]n the context of a contested case, it is impermissible

    for the Board to base its factual findings on its expertise, rather than on evidence in

    the record, although the Boards expertise appropriately plays a role in interpreting

    record evidence.).

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    4. The Boards Ultimate Conclusion of Obviousness IsReviewed de Novo

    Obviousness is a question of law that [this Court] review[s] de novo with

    underlying factual findings. In re NTP, Inc. , 654 F.3d 1279, 1297 (Fed. Cir.

    2011); see also In re ICON Health & Fitness, Inc. , 496 F.3d 1374, 1378 (Fed. Cir.

    2007) (Although based on determinations of underlying facts, which we review

    for substantial evidence, the ultimate conclusion of obviousness is a legal question,

    which we review de novo.).

    B. The Board Erred in Construing Precharge Informationin Claim 33 as Nonfunctional Descriptive Material thatNeed Not Be Shown in the Prior Art

    As part of its obviousness analysis, the Board construed precharge

    information in claim 33 as nonfunctional descriptive material, which the Board

    concluded need not be present in the prior art to establish invalidity. (A59; A62.)

    Under this erroneous construction, the Board essentially eliminated the precharge

    information limitation altogether, making it unnecessary to show in the prior art.

    As legal authority for doing so, the Board cited In re Ngai , 367 F.3d 1336, 1338

    (Fed. Cir. 2004), which in turn relies on In re Gulack , 703 F.2d 1381, 1385

    (Fed. Cir. 1983). (A59.) The Boards construction, however, is legally faulty and

    unsupported by any controlling authority.

    As explained above, the operation code recited in claim 33 tells the DRAM

    that the next operation is a read and tells the sense amplifiers whether or not to

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    precharge after that read. ( Supra III.B.4.) Even though, as the Board noted, the

    claim does not recite the act of precharging the sense amplifiers (A59), for a

    DRAM to operate as described in claim 33, it must receive an operation code that

    includes both a read instruction and precharge information. Indeed, claim 29

    specifically requires the DRAM to sample this operation code. Receiving both

    pieces of information in the same operation code changes the timing of bus access

    compared to the prior art and significantly improves the efficiency of the system.

    (Supra III.B.4.) Thus, claim 33s requirement that precharge information be

    included in the same operation code as the read instruction cannot be dismissed as

    mere nonfunctional material since it provides necessary information to the

    DRAM and affects bus timing in a critical way that distinguishes the prior art.

    Indeed, it bears repeating that in all of the secondary references relied on by the

    Board (Olson, Wicklund, and Bowater), the read/write operation and precharge

    operation are sent in necessarily separate signals, with the bus tied up between

    those signals, whereas the invention recited in claim 33 requires only a single, brief

    bus access because the read instruction and precharge information are contained in

    the same operation code. This is not a trivial or nonfunctional distinction, as the

    Board erroneously held.

    It is a basic tenet of patent law that the claims define the scope of the patent

    right, and every limitation of the claim must be considered to determine validity or

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    infringement. See Warner-Jenkinson Co. v. Hilton Davis Chem. Co. , 520 U.S. 17,

    29 (1997) (Each element contained in a patent claim is deemed material to

    defining the scope of the patented invention . . . .); Panduit Corp. v. Dennison

    Mfg. Co. , 810 F.2d 1561, 1576 (Fed. Cir. 1987) (A disregard of claim limitations,

    as here, would render claim examination in the PTO meaningless.); Bicon, Inc. v.

    Straumann Co. , 441 F.3d 945, 950-52 (Fed. Cir. 2006) ([C]laims are interpreted

    with an eye toward giving effect to all terms in the claim.).

    The Boards reliance on Ngai is inapposite. That case refers to the rule that

    alleged inventions that consist of nothing more than printed matter to be observed

    by a human generally do not fall within the class of patentable statutory subject

    matter. Ngai , 367 F.3d at 1339; see also AstraZeneca LP v. Apotex, Inc. , 633 F.3d

    1042, 1063-65 (Fed. Cir. 2010) (citing Ngai for proposition that adding new

    instructions to a known product is simply an addition of unpatentable subject

    matter). The printed matter cases limit patentable subject matter in order to

    prevent inventors from patenting material useful and intelligible only to the

    human mind. In re Lowry , 32 F.3d 1579, 1583 (Fed. Cir. 1994). Here, by

    contrast, the bits that provide precharge information are not even read by humans;

    they are sent to DRAMs. The printed matter cases have no factual relevance

    where the invention as defined by the claims requires that the information be

    processed not by the mind but by a machine, the computer. Id. (citation

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    omitted). Thus, the printed matter exception is not even applicable in the context

    of computerized bits.

    The Boards construction also runs afoul of this Courts claim-differentiation

    doctrine. As this Court has held, claim differentiation create[s] a presumption

    that each claim in a patent has a different scope. Comark Commcns, Inc. v.

    Harris Corp. , 156 F.3d 1182, 1187 (Fed. Cir. 1998) (holding that proposed

    construction of claim 1 would violate the doctrine of claim differentiation by

    rendering claim 2 superfluous); see also Tandon Corp. v. USITC , 831 F.2d 1017,

    1023 (Fed. Cir. 1987). Here, the Boards construction, which ignores precharge

    information as mere nonfunctional descriptive material, would render claim 33

    superfluous as compared to claim 29, and is therefore presumptively incorrect. See

    Comark , 156 F.3d at 1187.

    C. The Boards Alternative Determination that an OperationCode Containing Both a Read Instruction and PrechargeInformation Would Have Been Obvious in 1990 LacksSubstantial Evidence

    There is no dispute that the primary references relied on by the Board, i.e.,

    Bennett, iAPX, and iRAM, do not discuss precharging at all a