BYW95C.pdf

DATA SHEET

Product specificationSupersedes data of December 1979

1996 Jun 07

DISCRETE SEMICONDUCTORS

BYW95 seriesFast soft-recoverycontrolled avalanche rectifiers

handbook, 2 columns

M3D118

1996 Jun 07 2

Philips Semiconductors Product specification

Fast soft-recoverycontrolled avalanche rectifiers BYW95 series

FEATURES Glass passivated High maximum operating

temperature Low leakage current Excellent stability Guaranteed avalanche energy

absorption capability Available in ammo-pack Also available with preformed leads

for easy insertion.

DESCRIPTIONRugged glass SOD64 package,using a high temperature alloyed

construction. This package ishermetically sealed and fatigue freeas coefficients of expansion of allused parts are matched.

Fig.1 Simplified outline (SOD64) and symbol.

2/3 page (Datasheet)

MAM104

k a

LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVRRM repetitive peak reverse voltage

BYW95A 200 VBYW95B 400 VBYW95C 600 V

VR continuous reverse voltageBYW95A 200 VBYW95B 400 VBYW95C 600 V

IF(AV) average forward current Ttp = 60 C; lead length = 10 mmsee Fig.2;averaged over any 20 ms period;see also Fig.6

3.00 A

Tamb = 65 C; PCB mounting (seeFig.11); see Fig.3;averaged over any 20 ms period;see also Fig.6

1.25 A

IFRM repetitive peak forward current Ttp = 60 C; see Fig.4 30 ATamb = 65 C; see Fig.5 13 A

IFSM non-repetitive peak forward current t = 10 ms half sine wave;Tj = Tj max prior to surge;VR = VRRMmax

70 A

ERSM non-repetitive peak reverseavalanche energy

L = 120 mH; Tj = Tj max prior tosurge; inductive load switched off

10 mJ

Tstg storage temperature 65 +175 CTj junction temperature see Fig.7 65 +175 C

1996 Jun 07 3



ELECTRICAL CHARACTERISTICSTj = 25 C unless otherwise specified.

THERMAL CHARACTERISTICS

Note1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.11.

For more information please refer to the General Part of associated Handbook.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITVF forward voltage IF = 5 A; Tj = Tj max; see Fig.8 1.25 V

IF = 5 A; see Fig.8 1.50 VV(BR)R reverse avalanche

breakdown voltageIR = 0.1 mA

BYW95A 300 VBYW95B 500 VBYW95C 700 V

IR reverse current VR = VRRMmax;see Fig.9

1 A

VR = VRRMmax; Tj = 165 C;see Fig.9

150 A

trr reverse recovery time when switched from IF = 0.5 Ato IR = 1 A; measured atIR = 0.25 A; see Fig.12

250 ns

Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.10 85 pFmaximum slope ofreverse recovery current

when switched from IF = 1 A toVR 30 V and dIF/dt = 1 A/s;see Fig.13

7 A/s

SYMBOL PARAMETER CONDITIONS VALUE UNITRth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/WRth j-a thermal resistance from junction to ambient note 1 75 K/W

dIRdt--------

1996 Jun 07 4



GRAPHICAL DATA

a = 1.42; VR = VRRMmax; = 0.5.Switched mode application.

Fig.2 Maximum permissible average forwardcurrent as a function of tie-point temperature(including losses due to reverse leakage).

handbook, halfpage

0 o 200

4

3

IF(AV)

1

0

2

MGC609

100Ttp ( C)

(A)

a = 1.42; VR = VRRMmax; = 0.5.Device mounted as shown in Fig.11.Switched mode application.

Fig.3 Maximum permissible average forwardcurrent as a function of ambient temperature(including losses due to reverse leakage).

handbook, halfpage

0 o 200

2.0IF(AV)

0

0.4

MGC608

0.8

1.2

1.6(A)

100 Tamb ( C)

Ttp = 60 C; Rth j-tp = 25 K/W.VRRMmax during 1 ; curves include derating for Tj max at VRRM = 600 V.

Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

handbook, full pagewidth40

10

0

20

10 10 1 10 102 103 104

MGC606

30

tp (ms)2 1

IFRM(A)

0.2

0.5

1.0

0.1

=0.05

1996 Jun 07 5



Tamb = 65 C; Rth j-a = 75 K/W.VRRMmax during 1 ; curves include derating for Tj max at VRRM = 600 V.

Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

handbook, full pagewidth16

4

0

8

10 10 1 10 102 103 104

MGC607

12

tp (ms)2 1

IFRM(A)

0.2

0.5

0.1

=0.05

1.0

a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.

Fig.6 Maximum steady state power dissipation(forward plus leakage current losses,excluding switching losses) as a functionof average forward current.

handbook, halfpage

0 4

5P

0

1

MGC611

2

3

4

2

(W)

2IF(AV) (A)

2.5 1.57

1.42

a=3

Solid line = VR.Dotted line = VRRM; = 0.5.

Fig.7 Maximum permissible junction temperatureas a function of reverse voltage.

handbook, halfpage

0 200 400 800

200

0

MGC575

600

100

Tj

VR (V)

BA C

( C)o

1996 Jun 07 6



Dotted line: Tj = 175 C.Solid line: Tj = 25 C.

Fig.8 Forward current as a function of forwardvoltage; maximum values.

handbook, halfpage

0 2

10IF

0

2

MGC610

4

6

8(A)

1VF (V)

Fig.9 Reverse current as a function of junctiontemperature; maximum values.

VR = VRRMmax.

handbook, halfpage103

102

10

1

10 12000

MGC574

100 Tj ( C)o

IR(A)

f = 1 MHz; Tj = 25 C.

Fig.10 Diode capacitance as a function of reversevoltage; typical values.

handbook, halfpage

1

MGC605

10VR (V)

102 1031

10 2

10

(pF)Cd

Fig.11 Device mounted on a printed-circuit board.

Dimensions in mm.

handbook, halfpage

MGA200

3

2

7

50

25

50

1996 Jun 07 7



handbook, full pagewidth

10

1 50

25 V

DUT

MAM057

+t rr

0.5

0

0.5

1

IF(A)

IR(A)

t0.25

Fig.12 Test circuit and reverse recovery time waveform and definition.

Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns.Source impedance: 50 ; tr 15 ns.

Fig.13 Reverse recovery definitions.

andbook, halfpage

10%

100%

dIdt

t

trr

IF

IR MGC499

F

dIdt

R

1996 Jun 07 8



PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.

Data Sheet StatusObjective specification This data sheet contains target or goal specifications for product development.Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.Product specification This data sheet contains final product specifications.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the specification.

Fig.14 SOD64.

Dimensions in mm.The marking band indicates the cathode.

handbook, full pagewidth

MBC049

4.5max

k a

28 min28 min 5.0 max

1.35max

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