BT131W

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Philips Semiconductors Product specification

Triacs BT131W serieslogic level

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated, sensitive gate triacs in a SYMBOL PARAMETER MAX. MAX. UNIT

plastic envelope suitable for surfacemounting, intended for use in general BT131W- 500 600purpose bidirectional switching and VDRM Repetitive peak off-state voltages 500 600 Vphase control applications. These IT(RMS) RMS on-state current 1 1 Adevices are intended to be interfaced ITSM Non-repetitive peak on-state current 10 10 Adirectly to microcontrollers, logicintegrated circuits and other lowpower gate trigger circuits.

PINNING - SOT223 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 main terminal 1

2 main terminal 2

3 gate

tab main terminal 2

LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500 -600VDRM Repetitive peak off-state - 500

1 6001 Vvoltages

IT(RMS) RMS on-state current full sine wave; Tlead108 C - 1 AITSM Non-repetitive peak full sine wave; Tj = 25 C prior toon-state current surge

t = 20 ms - 10 At = 16.7 ms - 11 A

I2t I2t for fusing t = 10 ms - 0.5 A2sdIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/striggering T2+ G+ - 50 A/ s

T2+ G- - 50 A/ sT2- G- - 50 A/ sT2- G+ - 10 A/ s

IGM Peak gate current - 2 AVGM Peak gate voltage - 5 VPGM Peak gate power - 5 WP

G(AV)Average gate power over any 20 ms period - 0.5 W

Tstg Storage temperature -40 150 CTj Operating junction - 125 C

temperature

T1T2

G

4

1 2 3

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac mayswitch to the on-state. The rate of rise of current should not exceed 3 A/s.

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THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-sp Thermal resistance full or half cycle - - 15 K/Wjunction to solder point - - - K/W

Rth j-a Thermal resistance pcb mounted; minimum footprint - 156 - K/Wjunction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W

STATIC CHARACTERISTICSTj = 25 C unless otherwise stated


IGT Gate trigger current VD = 12 V; IT = 0.1 AT2+ G+ - 0.4 3 mAT2+ G- - 1.3 3 mAT2- G- - 1.4 3 mAT2- G+ - 3.8 7 mA

IL Latching current VD = 12 V; IGT = 0.1 AT2+ G+ - 1.2 5 mAT2+ G- - 4.0 8 mAT2- G- - 1.0 5 mAT2- G+ - 2.5 8 mA

IH Holding current VD = 12 V; IGT = 0.1 A - 1.3 5 mAVT On-state voltage IT = 2 A - 1.2 1.5 VVGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; Tj = 125 C 0.2 0.3 - VID Off-state leakage current VD = VDRM(max); Tj = 125 C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICSTj = 25 C unless otherwise stated


dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 C; 5 15 - V/ soff-state voltage exponential waveform; RGK = 1 k

tgt Gate controlled turn-on ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A; - 2 - stime dIG/dt = 5 A/s

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Fig.1. Maximum on-state dissipation, Ptot, versus rmson-state current, IT(RMS), where = conduction angle.

Fig.2. Maximum permissible non-repetitive peakon-state current ITSM, versus pulse width tp, for

sinusoidal currents, tp 20ms.

Fig.3. Maximum permissible non-repetitive peakon-state current ITSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.4. Maximum permissible rms current IT(RMS) ,versus lead temperature Tlead.

Fig.5. Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; Tlead 108C.

Fig.6. Normalised gate trigger voltageVGT(Tj)/ VGT(25C), versus junction temperature Tj.

0 0.2 0.4 0.6 0.8 1 1.20

0.2

0.4

0.6

0.8

1

1.2

1.4

= 180

120

90

60

30

IT(RMS) / A

Ptot / W Tsp(max) / C

125

122

119

116

113

110

107

104

1

-50 0 50 100 1500

0.2

0.4

0.6

0.8

1

1.2

Tsp / C

IT(RMS) / A

108 C

1

10

100

1000

T / s

ITSM / A

10us 100us 1ms 10ms 100ms

TITSM

time

I

Tj initial = 25 C max

T

dI /dt limitT

T2- G+ quadrant

0.01 0.1 1 100

0.5

1

1.5

2.0

2.5

3

surge duration / s

IT(RMS) / A

1 10 100 10000

2

4

6

8

10

12

Number of cycles at 50Hz

ITSM / A

TITSM

time

I

Tj initial = 25 C max

T

-50 0 50 100 1500.4

0.6

0.8

1

1.2

1.4

1.6

Tj / C

VGT(Tj)VGT(25 C)

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Fig.7. Normalised gate trigger currentIGT(Tj)/ IGT(25C), versus junction temperature Tj.

Fig.8. Normalised latching current IL(Tj)/ IL(25C),versus junction temperature Tj.

Fig.9. Normalised holding current IH(Tj)/ IH(25C),versus junction temperature Tj.

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Zth j-sp, versuspulse width tp.

Fig.12. Minimum, critical rate of rise of off-statevoltage, dVD/dt versus junction temperature Tj.

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

T2+ G+T2+ G-

T2- G-T2- G+

IGT(Tj)IGT(25 C)

0 0.5 1 1.5 20

0.5

1

1.5

2

VT / V

IT / A

Tj = 125 C

typ

max

Tj = 25 C

Vo = 1.0 V

Rs = 0.21 Ohms

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

IL(Tj)IL(25 C)

10us 0.1ms 1ms 10ms 0.1s 1s 10s

tp / s

0.01

0.1

1

10

Zth j-sp (K/W)100

tpP

t

D

unidirectional

bidirectional

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3

Tj / C

IH(Tj)

IH(25C)

0 50 100 1501

10

100

1000

Tj / C

dVD/dt (V/us)

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MOUNTING INSTRUCTIONS

Dimensions in mm.

Fig.13. soldering pattern for surface mounting SOT223.

3.8

min

6.32.3

4.6

1.5min

1.5

min

1.5

min

(3x)

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MECHANICAL DATA

Dimensions in mm

Net Mass: 0.11 g

Fig.14. SOT223 surface mounting package.

Notes1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".

Order code: 9397 750 00505.2. Epoxy meets UL94 V0 at 1/8".

6.76.3

3.1

2.9

4

1 2 3

2.31.05

0.85

0.80

0.60

4.6

3.73.3

7.36.7

B

A

0.100.02

1316max

1.8max

10max

0.320.24

(4x)

BM0.1

AM0.2

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DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 2000

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

May 2000 7 Rev 1.100

BT131W

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