AUTO-METROLOGY ON 3D FINFET TEM IMAGES Sajal BiringAUTO-METROLOGY ON 3D FINFET TEM IMAGES Sajal...
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AUTO-METROLOGY ON 3D FINFET TEM IMAGES Sajal Biring Materials Analysis Technology Inc. 1A4, No. 1, Li-Hsin Rd. I, Science-Based Industrial Park, Hsinchu City, Taiwan 300, R.O.C. E-mail: [email protected] KEY WORDS: 3D FinFET, TEM, TEM image, image processing, edge detection, data analysis, data interpretation ABSTRACT 3D FinFET has been introduced in the last decade [1] to provide a better transistor performance at a smaller scale as the device size shrinks with the progress of time in semiconductor industries. The performance is highly sensitive to the size and shape parameters [2] which need to be optimized with tighter tolerances. Manual measurement of nano-scale features on 3D FinFET TEM images is not only a time consuming and tedious task but also erroneous owing to visual judgment. Here, an auto-metrology approach is presented to extract the measured values with higher precision and accuracy; minimizing the uncertainty in the manual measurement. Firstly, 3D FinFET TEM image is processed through an edge detecting algorithm (e.g. Canny) to divulge the fin profile precisely. Finally, an algorithm calculates out the required geometrical data relevant to the FinFET parameters and presents it in a data table or graph based on the purpose of data interpretation. This auto-metrology approach is expected to be adopted by academia or industry for proper data analysis and interpretation with higher precision and efficiency. FIGURES Fig.1 3D FinFET TEM image (Intel i7-3770) Fig.2 Edge detection Fig.3 Corrected profile REFRENCES [1] D. Hisamoto, W.C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, T.J. King, J. Bokor, and C.M. Hu, “FinFET – A Self-Aligned Double-Gate MOSFET Scalable to 20 nm”, IEEE Trans. Electron Devices, 47, 12, 2320-2325 (2000). [2] X. Wu, P.C.H. Chan, and M. Chan, “Impacts of nonrectangular fin cross section on the electrical characteristics of FinFET”, IEEE Trans. Electron Devices, 52, 1, 63-68 (2005). 1 1 2048 2048 X – Pixel Number Y – Pixel Number 1 2048 Y – Pixel Number 1 2048 X – Pixel Number 20 nm 20 nm X – Pixel Number Y – Pixel Number 140 440 740 1040 1340 1640 1940 30 530 1030 1530 2030
Transcript of AUTO-METROLOGY ON 3D FINFET TEM IMAGES Sajal BiringAUTO-METROLOGY ON 3D FINFET TEM IMAGES Sajal...
AUTO-METROLOGY ON 3D FINFET TEM IMAGES
Sajal Biring
Materials Analysis Technology Inc.
1A4, No. 1, Li-Hsin Rd. I, Science-Based Industrial Park, Hsinchu City, Taiwan 300, R.O.C.
E-mail: [email protected]
KEY WORDS : 3D FinFET, TEM, TEM image, image processing, edge detection, data analysis, data interpretation
ABSTRACT
3D FinFET has been introduced in the last decade [1] to provide a better transistor performance at a smaller scale as the device size shrinks with the progress of time in semiconductor industries. The performance is highly sensitive to the size and shape parameters [2] which need to be optimized with tighter tolerances. Manual measurement of nano-scale features on 3D FinFET TEM images is not only a time consuming and tedious task but also erroneous owing to visual judgment. Here, an auto-metrology approach is presented to extract the measured values with higher precision and accuracy; minimizing the uncertainty in the manual measurement. Firstly, 3D FinFET TEM image is processed through an edge detecting algorithm (e.g. Canny) to divulge the fin profile precisely. Finally, an algorithm calculates out the required geometrical data relevant to the FinFET parameters and presents it in a data table or graph based on the purpose of data interpretation. This auto-metrology approach is expected to be adopted by academia or industry for proper data analysis and interpretation with higher precision and efficiency.
FIGURES
Fig.1 3D FinFET TEM image (Intel i7-3770) Fig.2 Edge detection Fig.3 Corrected profile
REFRENCES
[1] D. Hisamoto, W.C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, T.J. King, J. Bokor, and C.M. Hu, “FinFET – A Self-Aligned Double-Gate MOSFET Scalable to 20 nm”, IEEE Trans. Electron Devices, 47, 12, 2320-2325 (2000).
[2] X. Wu, P.C.H. Chan, and M. Chan, “Impacts of nonrectangular fin cross section on the electrical characteristics of FinFET”, IEEE Trans. Electron Devices, 52, 1, 63-68 (2005).
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