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AUIRF3808HEXFETPower MOSFET

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PD - 97697A

G D S

Gate Drain Source

TO-220ABAUIRF3808

SD

G

D

S

D

G

AUTOMOTIVE GRADE

Absolute Maximum RatingsStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in thespecifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect devicereliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.Ambient temperature (TA) is 25C, unless otherwise specified.

Features

Description

HEXFETis a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

V(BR)DSS 75V

RDS(on) typ. 5.9m

max 7.0m

ID 140A

Parameter UnitsID@ TC= 25C Continuous Drain Current, VGS@ 10V

ID@ TC= 100C Continuous Drain Current, VGS@ 10V A

IDM Pulsed Drain Current

PD@TC= 25C Power Dissipation W

Linear Derating Factor W/C

VGS Gate-to-Source Voltage V

EAS Single Pulse Avalanche Energy (Thermally Limited) mJ

IAR Avalanche Current A

EAR Repetitive Avalanche Energy mJ

dv/dt Peak Diode Recovery dv/dt V/ns

TJ Operating Junction and

TSTG Storage Temperature Range C

Soldering Temperature, for 10 seconds (1.6mm from case )Mounting Torque, 6-32 or M3 screw

Thermal ResistanceParameter Typ. Max. Units

RJC Junction-to-Case 0.45

RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W

RJA Junction-to-Ambient 62

-55 to + 175

300

10 lbf in (1.1N m)

330

2.2

20

Max.140

97

550

5.5

See Fig. 12a, 12b, 15, 16

430

82

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S

D

G

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Starting TJ = 25C, L = 0.130mH

RG = 25, IAS = 82A. (See Figure 12).

ISD 82A, di/dt 310A/s, VDD V(BR)DSS,

TJ 175C

Pulse width 400s; duty cycle 2%.

S

D

G

Cosseff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Limited by TJmax, see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

R is measured at TJof approximately 90C.

Static Electrical Characteristics @ TJ= 25C (unless otherwise specified)

Parameter Min. Typ. Max. UnitsV(BR)DSS Drain-to-Source Breakdown Voltage 75 V

V(BR)DSS/TJ Breakdown V oltage Temp. Coefficien t 0.086 V/C

RDS(on) Static Drain-to-Source On-Resistance 5.9 7.0 mVGS(th) Gate Threshold Voltage 2.0 4.0 V

gfs Forward Transconductance 100 S

IDSS Drain-to-Source Leakage Current 20 A

250

IGSS Gate-to-Source Forward Leakage 200 nA

Gate-to-Source Reverse Leakage -200

Dynamic Electrical Characteristics @ TJ= 25C (unless otherwise specified)

Parameter Min. Typ. Max. UnitsQg Total Gate Charge 150 220

Qgs Gate-to-Source Charge 31 47 nC

Qgd Gate-to-Drain ("Miller") Charge 50 76

td(on) Turn-On Delay Time 16 tr Rise Time 140

td(off) Turn-Off Delay Time 68 ns

tf Fall Time 120

LD Internal Drain Inductance 4.5 Between lead,

nH 6mm (0 .25in. )LS Internal Source Inductance 7.5 from package

and center of die contactCiss Input Capacitance 5310

Coss Output Capacitance 890 pF

Crss Reverse Transfer Capacitance 130

Coss Output Capacitance 6010

Coss Output Capacitance 570

Cosseff.ec ve u pu apac ance

1140 Diode Characteristics

Parameter Min. Typ. Max. UnitsIS Continuous Source Current 140

(Body Diode) AISM Pulsed Source Current 550

(Body Diode) VSD Diode Forward Voltage 1.3 V

trr Reverse Recovery Time 93 140 ns

Qrr Reverse Recovery Charge 340 510 nC

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VDS= 25V

Conditions

VGS= 0V, VDS= 1.0V, = 1.0MHz

VDS= 25V, ID= 82A

ID= 82A

VDS= 60V

VGS= 20V

VGS= -20V

VGS= 10V

VDS= VGS, ID= 250A

VDS= 75V, VGS= 0V

VDS= 60V, VGS= 0V, TJ= 150C

MOSFET symbol

VDD= 38VID= 82A

RG= 2.5

Conditions

VGS= 10V

VGS= 0V

ConditionsVGS= 0V, ID= 250A

Reference to 25C, ID= 1mA

VGS= 10V, ID= 82A

= 1 .0MHz, See Fig. 5

VGS= 0V, VDS= 0V to 60V

TJ= 25C, IF= 82A

di/dt = 100A/s

TJ= 25C, IS= 82A, VGS= 0V

showing theintegral reverse

p-n junction diode.

VGS= 0V, VDS= 60V, = 1.0MHz

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Qualification Information

TO-220 N/A

RoHS Compliant Yes

ESD

Machine Model Class M4 (+/- 800V)

AEC-Q101-002

Human Body Model Class H2 (+/- 4000V)

AEC-Q101-001

Qualification Level

Automotive

(per AEC-Q101)

Comments: This part number(s) passed Automot ive qual ificat ion.

IRs Industrial and Cons umer qualification level is granted by

extension of the higher Automotive level.

Charged Device Model Class C5 (+/- 2000V)

AEC-Q101-005

Moisture Sensitivity Level

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1 1 10 100

20s PULSE WIDTH

T = 25 CJ

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I

,Drain-to-SourceCurrent(A)

DS

D

4.5V

1

10

100

1000

0.1 1 10 100

20s PULSE WIDTH

T = 175 CJ

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I

,Drain-to-SourceCurrent(A)

DS

D

4.5V

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R

,

Drain-to-SourceOnResistance

(Normalized)

J

DS(on)

V =

I =

GS

D

10V

137A

1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0

VGS, Gate-to-Source Voltage (V)

10.00

100.00

1000.00

ID,

Drain-to-SourceCurrent)

TJ = 25C

TJ = 175C

VDS = 15V

20s PULSE WIDTH

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C,Capacitance(pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTEDCrss = CgdCoss = Cds+ Cgd

0.0 0.5 1.0 1.5 2.0

VSD, Source-toDrain Voltage (V)

0.10

1.00

10.00

100.00

1000.00

ISD,

ReverseDrainCurrent(A)

TJ = 25C

TJ = 175C

VGS = 0V

1 10 100 1000

VDS , Drain-toSource Voltage (V)

1

10

100

1000

10000

ID,

Drain-to-SourceCurrent(A)

Tc = 25CTj = 175CSingle Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100sec

0 40 80 120 160

0

2

4

6

8

10

12

Q , Total Gate Charge (nC)

V

,Gate-to-SourceVoltage(V)

G

GS

I =D 82A

V = 15VDS

V = 37VDS

V = 60VDS

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Fig 9. Maximum Drain Current Vs.

Case Temperature

VDS

90%

10%

VGS

td(on) tr td(off) tf

+

-

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Th

ermalResponse

(Z

)

1

thJC

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150 175

TC , Case Temperature (C)

0

20

40

60

80

100

120

140

ID,

DrainCurrent(A)

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QG

QGS QGD

VG

Charge

D.U.T. VDS

IDIG

3mA

VGS

.3F

50K

.2F12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain CurrentFig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

R G

IAS

0.01tp

D.U.T

LVDS

+- VDD

DRIVER

A

15V

20V

Fig 14. Threshold Voltage Vs. Temperature

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ, Temperature ( C )

1.0

1.5

2.0

2.5

3.0

3.5

VGS

(th)GatethresholdVoltage(V)

ID = 250A

25 50 75 100 125 150

0

160

320

480

640

800

Starting Tj, Junction Temperature ( C)

E

,SinglePulseAvalancheEnergy(mJ)

AS

ID

TOP

BOTTOM

34A

58A

82A

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Fig 15. Typical Avalanche Current Vs.Pulsewidth

Fig 16. Maximum Avalanche EnergyVs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:(For further info, see AN-1005 at www.irf.com)1. Avalanche failures assumption:Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for every part type.2. Safe operation in Avalanche is allowed as long asTjmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. PD (ave) = Average power dissipation per single avalanche pulse.5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).6. Iav = Allowable avalanche current.

7. T= Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave)= 1/2 ( 1.3BVIav) =T/ ZthJC

Iav =2T/ [1.3BVZth]

EAS (AR)= PD (ave)tav

1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

1

10

100

1000

AvalancheCurrent(A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vsavalanche pulsewidth, tavassuming Tj = 25C due toavalanche losses

0.01

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (C)

0

100

200

300

400

500

EAR

,AvalancheEnergy(mJ)

TOP Single Pulse

BOTTOM 10% Duty Cycle

ID = 140A

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For N-channelHEXFETpower MOSFETs

P.W.Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward Drop

Re-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =P.W.

Period

+

-

+

+

+-

-

-

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Ordering Information

Base part

number

Package Type Standard Pack Complete Part Number

Form QuantitAUIRF3808 TO-220 Tube 50 AUIRF3808

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