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Milliard technical handbook

32

o gBook one

E

1

Semiconductor devices2<D CD

S3o3Q.

| Part eightMicrowave semiconductors andcomponents

£

c3

CO

CO

<3June 1979 Qf

MOI7CCVII

MICROWAVE SEMICONDUCTORSAND COMPONENTS

CONTENTS

MIXER AND DETECTOR DIODES

SELECTION GUIDE (see coloured pages) fc

GENERAL SECTION A =

GUNN, IMPATT AND NOISE DIODES B

BACKWARD DIODES D =

VARACTOR DIODES (Multiplier, specialpurpose and tuning types) E |

GUNN OSCILLATORS F |

DOPPLER AND TRAFFIC RADARS G |

MISCELLANEOUS H =

ISOLATORS AND CIRCULATORS J |

INDEX >

The issue of the Information contained in this publication does not imply any authority

or licence for the utilisation of any patented feature.

'Milliard' is the trademark of Mullard Limited and is registered in most of the principal

countries of the world,

Mullard Limited 1979

Book 1 comprises the following parts-

Part 1 A Small-signal transistors

Part 1

B

Low -frequency power transistors

Part 2 R,F. power devices

Part 3 Diodes

Part 4 Power diodes

Part 5 Thyristors, trlacs

Part 6 LOCMOS digital integrated circuits

Part 7A Consumer integrated circuits

Part 7B Professional analogue integrated circuits

Part 8 Microwave semiconductors and components

Part 9 Opto -electronic devices {to be issued later)

PLUS—

Signetics Technical Handbooks

Memories

Microprocessors

Analogue

Logic

Printed by Unwin Brothers Limited

The Gresham Press, Old WoHing, Surrey

A member of the Staples Printing Group

r? BOOK 1 (Part 8)

SEMICONDUCTOR DEVICESMicrowave semiconductorsMicrowave components

Milliard manufacture and market electronic componentsunder the Mullard, Philips and Signetics brands.

MULLARD LTD,, MULLARD HOUSE, TORRINGTON PLACE,LONDON, WC1E 7HD

Telephone 01-580 6633 Telex: 264341

DATA HANDBOOK SYSTEM

The Mullard data handbook system is made up of three sets of books, each comprising

several parts, plus the Signetics technical handbooks.

The three sets of books, easily identifiable by the colours on their covers, are as follows:

Book t (blue) Semiconductor devices and

integrated circuits

Book 2 (orange) Valves and tubes

Book 3 (green) Passive components, materials, and

assemblies.

Each part is completely reviewed annually ; revised and reprinted where necessary. Revisions

to previous data sheets are indicated by an arrow in the margin.

The data sheets contained in these books are as accurate and up to date as it is reasonably

possible to make them at the time of going to press. It must, however, be understood that no

guarantee can be given here regarding the availability of the various devices or that their

specifications may not be changed before the next edition is published.

The devices for which full data is given in these books are those around which we would

recommend equipment to be designed. Where appropriate, other types no longer recom-

mended for new equipment designs, but generally available for equipment production are

listed separately with abridged data. Data sheets for these types may be obtained on

request. Older devices for which data may still be obtained on request are also included in

the index of the appropriate part of each book.

Requests for information regarding the data handbook system (including Signetics data)

and for individual data sheets should be made to the

Technical Publications Department

Mullard Limited

New Road

Mitcham

Surrey CR4 4XY

Telex: 22194

Information regarding price and availability of devices must be obtained from our

authorized agents or from our representatives.

SELECTION GUIDE

SECTION B - GUNN, IMPATT AND NOISE DIODES

Gunn Effect Devices

poutmin.

(mW)

Type No. Description Operating

Voltage

(V)

rtot

max.

<W)

5

10

15

100

200

300

50

CXY11ACXY11BCXY11C

CXY19CXY19ACXY19BCXY21

Gallium arsenide bulk effect

devices employing the Gunneffect to produce c.w. oscilla-

tions in X-band

7.0

7.0

7.0

8 to 1

5

8 to 15

8 to 15

8,0

1.0

1.0

1.0

6.0

6.0

7.5

25

5

10

15

CXY14ACXY14BCXY14C


devices employing the Gunneffect to produce c,w, oscilla-

tions in J-band

7.0

7.0

7.0

1.0

1.0

1.0

25

50

CXY24ACXY24B


devices employing the Gunneffect to produce c.w. oscilla-

tions inQ-band (Ka-band)

3.5

3.5

4.0

4,0

Impatt Diodes

p"out Type No. Description Operating Frequency

mm. Vol tage Range(mW) (V) (GHz)

500 BXY50 High efficiency silicon Impatt 91 8 to 10

400 BXY51 diodes for the generation of 80 10 to 12

300 BXY52 microwave c.w. power 70 12 to 14650 BXY60 120 6 to 8

Noise Diode

Frequency

Range

Type No. Description Typ. Excess

Noise

Ratio

(dB)

Typ,

Avalanche

Voltage

IV)

10 Hz to

18 GHzBAT31 Broadband noise generator 34 20

SECTION C - MIXER AND DETECTOR DIODES

Schottky Barrier Mixer Diodes

Max.

Operating

Frequency

(GHz!

Type No. Description

I.F.

Impedance

(n)

Max.

Noise

Figure

(dB)

12 BAT 10 Plastic package 250-500 7.5

12 BAT 11 Li.O. 280-3 SO 7.0

12BAT50BAT50R*

Rimmed coaxial 300-500 6.8

12BAV22BAV22R*

Rimmed coaxial 300—550 7.5

12

BAV9GABAV96BBAV9GCBAV96D

M.Q.M, 250-450

7.5

7.0

6.5

ao

12

BAW95DBAW95EBAW95FBAW95G

Reversible cartridge 250-500

8.2

7.5

7.0

6.5

18BAT39BAT39A Mixer pW 250-450

6.5

7.5

18BAT 51

BAT51R*Rimless coaxial 220-320 7.5

18BAT52BAT52R*

Rimless coaxial 220-320 8.5

40 BAT38 Mixer pill 700-1100 10

40 BAT59 Mixer pill 700-1400 10

40 BAV72 M.Q.M. 850-1300 10

'Reverse polarity version.

SECTION C (cant.)

Schottky Barrier Detector Diodes

Frequency

Range(GHz)

Type No. Description Typ.

1 /f noise

(dB)

Typ.

Tangential

Sensitivity

(dBm)

8 to 12 BAV46 Reversible cartridge 10 -55

8 to 1 2 BAV75 Pill 10 -50

8 to 12 BAV97 M.Q.M. 10 -54

Schottky Barrier Diode for Intruder Alarm Applications

Frequency

Range(GHz)


1/f noise

(jiV)

Typ.

Voltage output

for -90 dBminput

8 to 12 BAV46 Reversible cartridge 1.0* 40

*1 Hz to 1 kHz from carrier

SECTION D - BACKWARD DIODES

Backward Detector Diodes

Frequency

Range

(GHz)

Type No. Description Figure

of merit

(Ml

Typ.

Tangential

Sensitivity

(dBm)

1 to 18 AEY17 Mixer Mil >120 -53

12 to 18AEY29AEY29R*» Rimless coaxial >50 -53

! to 18 AEY31 M.Q.M. >120 -53

1 to 18 AEY31A M.Q.M. >50 -50

18 to 40 AEY3Z M.Q.M. >50 2.0 ^A/fiWt

** Reverse polarity version

tZero bias current sensitivity (typ

J

SECTION E - VARACTOR DIODES

Multiplier Varactor Diodes

Ca;

min,

^acitance

max.atVR

(V)

Type No. Description vRmax.

IV)

Typ.

Cut-off

Frequency

(GH?)

0,25

0.4

0.5

0.9

6

6

BXY41

BXY40

Silicon planar step recovery 25*

25*

200*

180*

0,5 1.0 6 BXY32 Silicon planar epitaxial step

recovery. For high order

frequency multiplier outputs

in X-band

20 150

0.6

0.8

1.0

1.5

6

6

1N5157

BXV29

Silicon planar epitaxial step

recovery. For frequency

multiplier outputs in X-band

20

25

200

120

o.a 1.2 6 BXY39 Silicon planar step recovery 40* 150*

1.0

1.0

2.5

3.0

6

6

BXY28

1N5155



multiplier outputs in C-band

45

35

120

120_—„

1.2 2.0 6 BXY38 Silicon planar step recovery 50* 120*

1.5

2.5

2.5

3.5

6

6

BXY56

BXV57

High efficiency silicon types

for multipliers with output

frequencies in C and X-bands

60

60

160*

140*


3.0 6.0 6 BXY27 Silicon planar epitaxial step


multiplier outputs in S-band

55 100


5.0 7.5 6

1N5152

1N5153



multiplier outputs in S-band75 100

6.0 12 6 BXY35 Silicon planar step recovery 100* 25*

28 39 6 BAY96 Silicon planar epitaxial. For

high efficiency frequency

multipliers

120 25

SECTION E (cant.)

Special Purpose Varador Diodes

Capacitance

min. max.

(pF)

atVR

(V)

Type No. Description VRmax.

(V)

Typ.

Cut-off

Frequency

(GHz)

0.2 typ- CXY10 Gallium arsenide. For parametric

amplifiers, frequency multipliers

and switches

6 350

0,25 typ. 6 CXY12 Gallium arsenide. For frequency

multiplier circuits up to G-band

output frequency

10 500

03 0.5 CAY ID Gallium arsenide diffused mesa

type, For parametric amplifiers,

frequency multipliers and switches

G 240

—

Frequency

Range

(GHz)


An.

(dB)

Typ.

Insertion

Loss

<dB)

2 to 7

7 to 12

CXY22ACXY22B Gallium arsenide limiter diodes

20

16

0.2

0.3

Tuning Varactor Diodes

Capacitance atV R Type No, Description V Rmin. max. max.

(pF> (V) {V)

0.8 1.2 4 BXY53 60

3.7 5.7 4 BXY54 Silicon planar epitaxial tuning devices 60

12 18 4 BXYB5 60

0.8 1.2 CXY23A 12

1.2 1.8 CXY23B Gallium arsenide Schottky barrier tuning 12

1.6 2.5 CXY23C devices 12

25 3.5 CXY23D 12

SECTION F - GUNN OSCILLATORS

This selection represents only a part of the Mullard range of solid state sources. Custombuilt

sources, including some with higher output powers, are available on request. Muliard offers a

comprehensive capability in the area of general solid state oscillators, with complex phase

locked and frequency agile sources for military applications.

Type No.

Nominal

Centre

Frequency

(GHz)

prout

(mWl

MinimumMechanical

Tuning

Range

[MHz}

MinimumElectronic

Tuning

Range

(MHz)

Output

Coupling

CLS310 9.4 5 ±50 200 WG16/WR90

CL8G30CLS630S

10.687 3 - - WG16/WR90

CL8631

CL8631S9.35 8 - - WG16/WR90

CLB632

CL8632S9.47 8 - - WG16/WR90

CL8633CLS633S

10.525 8 - - WG16/WR90

CLB640R*CL8640Tt

10.49

10.56

6

6

±60±60

30

8

WG16/WR90WG16/WR90

CLseao** 9.375 5 ±75 50 WG16/WR90

* Receiver local oscillator

T Transmitter** Klystron replacement for marine radars. Complies with B.O.T. specification

BOTSBN 115 10057/1,

S following type number signifies a self-oscillating mixer (auto-detector).

SECTION G - DOPPLER AND TRAFFIC RADARS

Traffic radars

Type No. Description Detection

Range

(metres)

A.C. Suppiv

Vol tage

(V)

CL888QBNX-band traffic radar sensor.

Cable entry through case,100 110

CL8880BNCX-band traffic radar sensor.

Cable entry through

mounting foot

100 110

Dapple r modules

Power Output Voltage Output*Type No. Description Centre frequency typ. typ.

(GH*) (mW) (fiV)

CL8960 10.687 10 40

CL8961 9.350 10 40

CL8962Doppler modules for

volumetric presence9.470 10 40

CL8963detection, industrial

process control,10.525 10 40

CL8964proximity switching,

intruder alarms and9.900 10 40

CLS965similar applications.

10,565 10 40

CL8967 10.365 10 40

Output voltage for input power 100 d8 down on power output at IS dB min.Sl 9nal + noise

SECTION H - MISCELLANEOUS

Horn antenna

Type No. Description Frequency Range

(GHz)

Gam(dB)

ACX-01A Horn antenna for miniature radars 9.0 to 1

1

16

M ix b rs/detecto rs

Type No. Description Centre Frequency

(GHz)

Connections

CL7500

CL7520Waveguide single ended mixers/detectors

10.637

9.35

WG16/WR90

WG16/WR90

parametric amplifier

Type No. Description

Gain

(dB)

Noise

Figure

max.

(dB)

Bandwidth

(MHz)

Frequency

Range

(GHz)

CL9022Packaged parametric amplifier in

temperature stabilized enclosure20 2.3 15 2.7 to 3,1

SECTION J - ISOLATORS AND CIRCULATORS

See selection guide in section J

GENERAL SECTION

GENERAL

MICROWAVE SEMICONDUCTORSGENERAL EXPLANATORY NOTES

TYPE NOMENCLATUREMullard microwave semiconductor devices are registered with Pro-Electron.The type nomenclature of a discrete device or, in certain cases, of a range of devices, consists of threeletters followed by a serial number. The serial number normally consists of two figures, but a suffixletter is added where variants or a series occur.

The first letter indicates the semiconductor material used:

A - germanium

B - silicon

C - compound materials, such as gallium arsenide

The second letter indicates the general function of the device:

A - detection diode, mixer diode

E • backward diode

X - multiplier diode such as varactor or step recovery diode

The third letter is T, V, W, X or Y which indicates that the device is designed or developed for industrial,professional or transmitting applications.

Subscripts for quantity symbols

A, a anode terminal

BR breakdown

F, f forward

I, i input

J, j junction

K, k cathode

O, o open-circuit, output

R, r resistive, reverse, repetitive

S, s series, source

Z,z impedance

O Mullard YJuly 1978

GENERAL

ELECTRICAL PARAMETERS

Resistance

Reactance

Impedance

Admittance

Conductance

Susceptance

Mutual inductance

Inductance

Capacitance

Frequency limits

Bandwidth

Noise factor

Symbols for microwave semiconductor devices

n efficiency

B bandwidth

cd diode capacitance

Ci

junction capacitance

Cmin diode capacitance at breakdown voltage

Co diode capacitance at zero bias

Cp parasitic (parallel) capacitance

Cs stray capacitance

Ctot total capacitance

f operating frequency

fco varactor diode cut-off frequency

1 current

•dc bias current

i.f. intermediate frequency

if d.c. forward current

Ifm peak forward current

IR continuous (d.c.) reverse leakage current

Lc conversion loss

Ls series inductance

M figure of merit

Nf flicker noise

N if noise figure at intermediate frequency

Device Associated

circuit

r R

X X

z Z

Y Y

9 G

b B

m M

1 L

c C

f max.

f min.

Af B

N

July 1978Y Milliard r?

Microwave semiconductors General Explanatory Notes GENERAL

No overall noise figure

N r noise temperature ratio

Pin input r.f . power

pout output r.f. power

ptot total power dissipated within the device

R|_ r.f. load resistance

Rs

spreading resistance

Rth thermal resistance

Si current sensitivity

sts tangential sensitivity

Tamb ambient temperature

Tease case temperature

Ths heatsink temperature at device interface with device

Ti

junction temperature

Tstg storage temperature

tp pulse duration

ts storage time

ttr transition time

V voltage

VBR breakdown voltage

V(BR)R reverse breakdown voltage

vf d.c. forward voltage

Vr d.c. reverse voltage

v.s.w.r. voltage standing wave ratio

Zjf intermediate frequency impedance

Zrf radio frequency impedance

Zv video impedance

vfflicker noise

Jk

PRODUCT SAFETY

The most modern high technology materials have been used in these components to ensure the highest

performance for the user. Some of them are toxic to man but the quantity used in a single device is so

small that the risk of toxic effects are negligible even in extreme circumstances.

U Milliard rJuly 1978

SEMICONDUCTOR GENERAL EXPLANATORYDEVICES NOTES

EXPLANATION OF HANDBOOK DATA

1. FORM OF ISSUEThe semiconductor data published in the Handbook follows the samepattern, as much as possible, concerning, (a) the forms of issue, (b) theratings system and (c) the ratings presentation.

1.1 Types of Data

The Handbook data is published either as tentative or final data.

Tentative Data

Tentative data aims at providing information on new devices as early as

possible to allow the customer to proceed with circuit design. The tentativedata may not include all the characteristics or ratings which will beincorporated later in. the final data and some of the numerical values

quoted may be slightly adjusted later on.

Final Data

The transfer from tentative data to final data involves the addition of thosenumerical values and curves which were not available at tentative datastage and small adjustments to those values already quoted in tentative data.

Reissue of final data may be made from time to time to incorporateadditional information resulting from prolonged production experienceor to meet new applications.

1.2 Presentation of Data

The information on the published data sheets is presented in the followingform

:

—description of basic application and physical characteristics of thedevice,

—quick reference data giving the most important ratings andcharacteristics.

—outline and dimensions. Reference to standard outline nomenclatureif applicable and lead connections.

—Ratings. Voltage, current, power and thermal ratings.

—Characteristics.

—Application information or operating conditions.

—Mechanical and environmental data if applicable.

—Charts showing ratings and characteristics.

2. RATINGSA rating is a limiting condition of usage specified for a device by themanufacturer, beyond which the serviceability may be impaired.

A rating system is a set of principles upon which ratings are established

and which determines their interpretation. There are three systems whichhave been internationally accepted and which allocate responsibility

between the device manufacturer and the circuit designer differently.

Milliard

2.1 Rating Systems

Unless otherwise stated the ratings given in semiconductor data sheets

follow the absolute maximum rating system.

The definitions of the three systems accepted by the International Electro-

technical Commission are as follows:

ABSOLUTE MAXIMUM RATING SYSTEM

Absolute maximum ratings are limiting values of operating and environ-

mental conditions applicable to any device of a specified type as defined

by the published data, and should not be exceeded under the worst

probable conditions.

These values are chosen by the device manufacturer to provide acceptable

serviceability of {he device, taking no responsibility for variations in equip-

ment or environment, and the effects of changes in operating conditions

due to variations in the characteristics of the device under consideration

and of all other devices in the equipment.

The equipment manufacturer should design so that initially and throughout

life no absolute maximum value for the intended service is exceeded with

any device under the worst probable operating conditions with respect

to variations i" supply voltage, environment, equipment components,

equipmen .omrol adjustment, load, signal or characteristics of the device

under consideration and of all other devices in the equipment.

DESIGN-CENTRE RATING SYSTEM

Design-centre ratings are limiting values of operating and environmental

conditions applicable to a bogey device of a specified type as defined by

its published data, and should not be exceeded under normal conditions.


serviceability cf the device in average applications, taking responsibility

for normal changes in operating conditions due to variations in supply

voltage, environment, equipment components, equipment control adjust-

ment, load, signal or characteristics of all other devices in the equipment.

The equipment manufacturer should design so that initially no design-

centre value for the intended service is exceeded with a bogey device in

equipment operating at the stated normal supply voltage.

DESIGN-MAXIMUM RATING SYSTEM

Design-maximum ratings are limiting values of operating and environ-

mental conditions applicable to a bogey device of a specified type as

defined by its published data, and should not be exceeded under the

worst probable conditions.


serviceability of the device, taking responsibility for the effects of changes

in operating conditions due to variations in the characteristics of the

device under consideration.

The equipment manufacturer should design so that initially and throughout

life no design-maximum value for the intended service is exceeded with a

bogey device under the worst piobable operating cbnditions with respect

to variations in supply voltage, environment, equipment components,equipment control adjustment, load, signal or characteristics of the device

under consideration and of all other devices in the equipment.

Milliard

GUNN, IMPATTAND NOISE DIODES

B

SILICON AVALANCHENOISE DIODE

BAT31

Epitaxial , silicon planar , broadband noise generator. This is a current controlled device

operated at avalanche breakdown and is effective from less than 10 Hz to above J-band.

Applications include built-in test equipment (BITE) for surveillance , tracking and weather

radars, microwave links , direction finding, p. cm. systems and noise modulators for

electronic countermeasures.

It conforms to the environmental requirements of BS9300 where applicable.

QUICK REFERENCE DATA

Frequency range <10 Hz to >18 GHz

Avalanche voltage min. 17

max. 22

VV

Recommended operating current range 0. 5 to 40 mA

Broadband excess noise ratio (fig. 3) typ. 34 dB

OUTLINE AND DIMENSIONS

Conforms to B.S. 3934 SO-86

Dimensions in mm

A: concentricity tolerance ;+ 0.13

01.60w1.52

5770

Normal operation with reverse bias, i.e. heatsink end positive.

MilliardSEPTEMBER 1977 BAT31 Page 1

max. 40 mA

max. 1.0 Wmax. 80 OC

-55 to +150 °C

mln. 17 V

min. 0.4 pF

max. 0.8 pF

max. 0.1 MA

max. 60 a

LIMITING VALUES (Absolute max. rating system)

IR

Ptot

TmbT8tg range

CHARACTERISTICS (T^ = 25 °C)

VBR(R) at IR = 5 mA

Cjat VR = 6V, f = 1MHz

IR at VR = 6 V

Rglope at IR = 40 mA, f = 1 kHZ 1)

^1 at IR = 1 mA and 40 mA, f = 1 kHz l) max. 2.

5

R40

C8

typ. 0.2 pF

Ls typ. 650 pH

Rl1) Rgiope is the reverse slope resistance and =- is the ratio of reverse slope resistance

at 1 mA and 40 mA, measured at 1 kHz. This ratio is included in the characteristics

to eliminate spurious effects in the noise output/current characteristic.

The reverse slope resistance consists of the space charge resistance Rsc , the

spreading resistance R—, and the ' thermal resistance' R^, i. e.

Rslope

= Rsc +Rsp + Rth

where: Rsc is approximately 10 Q at 10 to 40 mA and 19 Q at 1 mA

RSp is approximately 1 Q

VUu is the effective resistance due to isothermal heating in the device when

operated with an infinite heatsink. Above 10 MHz, Rth may be neglected.

2) The location of the top cap should be a hole of diameter 1. 8 to 2. 2 mm, bearing on

flange with a force not exceeding 10 N.

3) Other encapsulations may be made available on request.

MilliardBAT31 Page 2

BAT31

APPLICATION INFORMATION

The device, as characterized, is operated in a SO Q characteristic impedance measure-ment system. When used as a noise source in an on-off mode, the device, when off,

should appear to be 50 $2. Since it has a large reflection coefficient when zero biased orbiased just below avalanche breakdown, sufficient attenuation is required to provide areasonable match to 50 Q. For the broadest operating frequency range, an attenuator ofapproximately 14 dB with a v. s. w. r. of <1. 2 : 1 is recommended. This will reduce theavailable excess noise by 14 dB. Higher excess noise may be obtained, but over areduced operating frequency range , in a balanced configuration with low noise directionalcouplers (e. g. a 3 dB quadrature coupler) , or fed into a broadband ferrite isolator (or ter-minated circulator) which would reduce the available excess noise by approximately ldB.

Temperature and excess noise relationship

Excess noise Noise temperature 1 Hz bandwidth 1 MHz bandwidth

dB OK dBm dBm

+100 2. 9 x 1012 - 74 - 14

+ 90 2. 9 x 1011 - 84 - 24

+ 80 2. 9 x 1010 - 94 - 34

+ 70 2. 9 x 109 -104 - 44

+ 60 2. 9 x 108 -114 - 54

+ 50 2. 9 x 107 -124 - 64

+ 40 2. 9 x 106 -134 - 74

+ 30 2. 9 x 105 -144 - 84

+ 20 2.9 xl()4 -154 - 94

+ 10 2. 9 x 103 -164 -104

2. 9 x 102 -174 -114

The device may be pulse operated with a rise time of «0. 5 ps

The device should be operated from a constant current source, however, good results

may be achieved using a 28 V supply and typically a metal film or wirewound 1. 6 kQ

resistor in series with the noise diode , with suitable power supply decoupling.

m some applications, current profiling with time may be useful, i.e. linear excess noise

ratio as a function of log bias current as shown in fig. 1. This may be used for receiver

sensitivity measurement on a P. P. I. display.

Recommended bias

range for broadbandoperation up to 12.4GHz

45i-

"D

40oc

W.

o 35(-

<D10

bc

<° 30<DuXW

2k0.1

5 6 7 8/ / / /.

i i i i i i I

/9 10 12.4

Y i i i i 1

1

j i

1.0 10 40

Noise diode bias current (mA) D7762

Fig. 1

Typical excess noise ratio as a function of avalanche current

with frequency as a parameter.

Device mounted in a 50 fl 7 mm coaxial line as shown in Fig. 2

BAT31

/

07mm-

/////

//////

S77T77\ PV/V'/\ > y Noise diode

077*3 / / ' /Fig. 2

Device mounted in a 50 $2 7 mm coaxial line

CD

Z

O-t->

o

40

38

36

^ 34

</>

<DuXLU

32

15mA noise diode bias

t Absolute error for 50H1 system impedance

j—i i ' i i

1.0 2.0 5.0 10Frequency (GHz)

Fig. 3 D7764

Typical broadband noise performance for an avalanche current of 15 mAwith device mounted as shown in Fig. 2

<M' N *>?

I -»

—-^ tn

>C

c

> <U•*-> U)

<n ac +>



<b-H

<n Dutr u

a cL. a>a<D .O.

1000

a

100

10

a£a

St(0c

.ID

0000 Measured values

Vb = 19.43 volts

Theoretical fit fori T

j 1' 1 1 1 M

0.1 1.0 10 100

Avalanche current (mA) D7765

Fig. 4

Typical broadband noise density measured over a 1 kHz to 10 kHz bandwidth.

SILICON IMPATTDIODE BXY50

A high efficiency silicon Impatt diode for the generation of c.w. power at micro-wave frequencies. It conforms to the environmental requirements of BS9300 whereapplicable.


Operating frequency 8.0 to 10 GHz

Pout

(typ.)Crha = 35°C) 600 mWOperating current (typ.

)

135 mA

Operating voltage (typ.

)

91 V


02.1max

A-

1 1 621.53

+ ve

3.122.98 li

0.66036

1.801 50

1.621.53

Heatsink

end25 max _x 45'chamfer A = concentricity tolerance =±013

- ve

All dimensions in mm

JUNE 1977Milliard

BXY50 Page 1

RATINGS (ABSOLUTE MAXIMUM SYSTEM)

P max. (see note 1)

R (j-hs) max.

T .- T, max.

] hs

T rangestg

ELECTRICAL CHARACTERISTICS (Thg

= 25°C)

Min.

V Reverse breakdown voltage(BR)R

(atl = 1.0mA) 65R

I Reverse current (at VD = 50V)R kc Total capacitance (at V.n_.=5V)

TYPICAL OSCILLATOR PERFORMANCE

Operating current (see note 2)

Operating voltage

Frequency (see note 3) 8.

Output power (see notes 2,4,5 and 6) 500

Efficiency" 5.0 - %

OPERATING NOTES

1. The maximum junction temperature is 200 C, therefore care must be taken to

200 -T.hs ,„

ensure that P^ max. sR (J

. hs)W.

200 - Ths W

Rth<*"

hs)

15 °c/w

165 °c

-55 to +175 °c

Typ. Max.

75 85 V

- 10 HA

0.9 - pF

135 mA

91 V

firm

10 GHz

mW

vth'

where P^ = P. - P ...

tot in out

T = temperature of heatsink at interface with device

R (j- hs) = thermal resistance from junction to heatsink in which device

is clamped.

2. The bias supply should be current regulated to within l%and care should betaken

to avoid transient current surges which could cause burnout. The bias circuit

should be arranged to present a high impedance at d. c. tov.h.f. frequencies.

This will help to prevent oscillation in the bias circuit and noisy operation. The

maximum power supply requirements are 115V and 160mA.

3. The frequency is governed by the choice of cavity to which the device is coupled.

4. The polarity of the device must be strictly observed when applying bias,(see

outline drawing).

5. The output power is normally measured in a coaxial cavity near to centre band

frequency.

Milliard—IVIMMUi %mBXY50 Page 2


OPERATING NOTES (contd.

)

6. The heatsink end of the device should be held in a collet or equivalent clampingsystem to ensure minimum thermal resistance in the path to the mounting base.This in turn must be coupled to an adequate heatsink. Alternatively, directsoldering, using a low melting point solder, or an electrically conductive singleloaded epoxy, such as Epotek H40, may be used.

7. This device may be used as a negative resistance amplifier.

Devices may be selected to suit customers' specific requirements

Split copper heatsink

«. To bias Tee

and r.f. load

(50O)

Movable slug

insulation

Diode

COAXIAL TEST OSCILLATOR CAVITY

MilliardBXY50Page 3

-

op11

j

1

| | 1

*£

,35

-1

—

1

1

—

1

1 _

1—1—

!

—

h

-N-r

sII

...

- h- — —

O

--

--.h+-—t-

— T 1

1

|

-

i

...

J-1

1 -4-!

1 I _

L

<- E

;cr op

Mullard BXY50 Page 4


A high efficiency silicon Impatt diode for the generation of c. w. power at micro -

wave frequencies. It conforms to the environmental requirements of BS 9300 whereapplicable.


Operating frequency 10 to 12 GHz

Pout

(typ.)(Th8 =35°C) 450 mW

Operating current (typ.

)

120 mA


)

80 V


02.1max

A-

il 621 53

+ ve

. 3.12Jp 2 98

1

—

05*77

3-U066 *036

r, 801.50

1.621.53

17

Heatsink

end25max _x 45°chamfer A _ concentricity tolerance =±013

- ve


JUNE 1977Mullard

BXY51 Page 1


P max. (see note 1)tot

Rth ^ " hs) maX *

T - T, max.j hs

T rangestg


= 25°C)


(atID = 1.0mA)R

I Reverse current (at VD = 45V)R kCT Total capacitance (at V. >

R- 5V)



Operating voltage

Frequency (see note 3)

Output power (see notes 2,4,5 and 6)

Efficiency

OPERATING NOTES

1. The maximum junction temperature is 200 C, therefore care must be taken to

200 - Tuhs ,„ensure that P^ max. ^ R^ (j

. hs)W,

where P = P. - P,.

tot in out

T = temperature of heatsink at interface with devicehs

R (j- hs) =thermal resistance from junction to heatsink in which device

is clamped.



should be arranged to present a high impedance at d.c. to v.h.f. frequencies.

This will help to prevent oscillation in the bias circuit and noisy operation.

Particular care should be taken to minimise stray capacitances across the diode.

The maximum power supply requirements are 105V and 170mA.


4. The polarity of the device must be strictly observed when applying bias, (see

outline drawing).


frequency.

200 -Tis W

Rth

(^ hs)

19 °c/w

165 °c

-55 to +175 °c

Min. Typ. Max.

55 65 75 V

- - 10 /iA

- 0.85 - PF

120 mA

80 V

10 - 12 GHz

400 450 - mW_ 5.0 - %

Milliard —iwiuiiui v«Bxy51 page 2



)

6. The heatsink end of the device should be held in a collet or equivalent clampingsystem to ensure minimum thermal resistance in the path to the mounting base.This in turn must be coupled to an adequate heatsink. Alternatively, directsoldering, using a low melting point solder, or an electrically conductive singleloaded epoxy, such as Epotek H40, may be used.



|


Diode

.RE.

insulation

Movable slug


MilliardBXY51 Page 3

NIo

II

o

-

| | | 1 ..

» £

NI©

II

o

|

\n <E

Milliard BXY51 Page 4


A high efficiency silicon Impatt diode for the generation of c.w. power at micro-wave frequencies. It conforms to the environmental requirements of BS 9300 whereapplicable.



Pout^-XThs^50^ 370 mWOperating current (typ.

)

120 mA


)

70 V


02.1max

A-

1 1.621 53

+ ve

3.12v 2 98 1L

066036

1 1.801.50

1.621.53

Heatsinkend25max. _

x 45°chamfer A = concentricity tolerance =±013

- ve


JUNE 1977Milliard

BXY52 Page 1

P max. (see note 1)tot

R (j-hs) max.

T - T. max.j hs

T rangestg


= 25°C)

V Reverse breakdown voltage

hs W

(BR)R(at ID = 1.0mA)

R

Rth<j

i-hs)

24 °C/W

165 °c

-55 to +175 °c

Min. Typ. Max.

50 55 60 V

- - 10 fiA

- 0.75 - PF

120 mA

70 V

12 14 GHz

300 370 - mW- 4.5 - %

I Reverse current (at V„ = 40V)R KC Total capacitance (at V. R. R

-5V)



Operating voltage



Efficiency

OPERATING NOTES

1. The maximum junction temperature is 200°C, therefore care must be taken to

200 - Tuhs ,.,

ensure than P^ max. ^ - W

,

tn

where P, ^ = P. - P ,tot in out

T = temperature of heatsink at interface with devicehs

R (j- hs) = thermal resistance from junction to heatsink in which device

is clamped.



should be arranged to present a high impedance at d. c. to v. h. f .frequencies.


Particular care should be taken to minimise stray capacitance across the diode.



4. The polarity of the device must be strictly observed when applying bias,(see

outline drawing).


frequency.

Milliard —

—

BXY52 Page 2



)

6. The heatsink end of the device should be held in a collet or equivalent clamping

system to ensure minimum thermal resistance in the path to the mounting base.

This in turn must be coupled to an adequate heatsink. Alternatively, direct

soldering, using a low melting point solder, or an electrically conductive single

loaded epoxy, such as Epotek H40, may be used.




/ ^Spacer

Diode

« To bias Tee

and r.f. load

(50O)

Movable slug



~~*

NXom

II

o

J 2

NX<>

II

<- E

._ - w>

MullardBXY52 Page 4


A high efficiency silicon Impatt diode for the generation of c.w. power at micro-wave frequencies. It conforms to the environmental requirements of BS 9300 whereapplicable.


Operating frequency 6. to 8. GHz

Pout(typ.)(Ths = 35°C) 750 mWOperating current (typ.

)

125 mA


)

120 V


r

+ ve

3.122.98

02.1max

A-

it

1162M 53

066 u036

1.801.50

1.621.53

Heatsink

end0.2 5 max. _x LS'chamfer A _ concent.ricity tolerance -t

ve


013

JUNE 1977Milliard

BXY60 Page 1

Ptot

max. (see note 1)

Rth (j - hs) max.

T. - T. max.j hs

T. max.

Tstg

ran&e

200 - Tuhs

Rth (J " hs >

W

14 °c/w

165 °c

200 °c

-55 to +175 °c

Mln. Typ. Max.

85 100 115 V

- - 10 M- 0.97 - pF

125 mA

120 V

6.0 - 8.0 GHz

650 750 - mW- 5.0 - %

ELECTRICAL CHARACTERISTICS (Ths = 25°C)

V/dd\d Reverse breakdown voltage(BR)R

(atIR = 5.0mA)

IR Reverse current (at Vr = 70V)

CT Total capacitance (at V/gR*R = 75V)


Operating voltage



Efficiency

OPERATING NOTES

1. The maximum junction temperature is 200°C, therefore care must be taken to

200 - Tuhsensure that P

tQtmax. <

R (j. hs)

W,th

rout

T. = temperature of heatsink at interface with device

Rth (J" ns ) = thermal resistance from junction to heatsink in which device

is clamped.

2. The bias supply should be current regulated to within 1% and care should betaken


should be arranged to present a high impedance at d. c. toV.h. f. frequencies.


Particular care should be taken to minimise stray capacitances across the diode.



4. The polarity of the device must be strictly observed when applying bias (see out-

line drawing).


frequency.



)



This in turn must be coupled to an adequate heatsink. Alternatively, direct sold-

ering, using a low melting point solder, or an electrically conductive single



Devices may be selected to suit

customers' specific requirements


/ /Spacer

Movable slug

Diode



0.8

pout(W)

0.6

0.4

0.2

14 16

D.C. input power (W)

TYPICAL OUTPUT POWER AS A FUNCTION OF D.C. INPUT POWER

06219

0.8

Pout(W)

0.6

0.4

0.2

20 40 60 80 100 120 140

I dc bias(mA)

TYPICAL OUTPUT POWER AS A FUNCTION OF BIAS CURRENT

MullardBXY60 Page 4

GUNN EFFECTDEVICES

CXY11ACXY11BCXY11C

Gallium arsenide bulk effect devices employing the Gunn effect to produce c.w.

oscillations at microwave frequencies. Each device is encapsulated in a standard

microwave package and conforms to the environmental requirements of BS9300where applicable.



)

7.0 V

Ptot

max. (Tmb = 70oC) 1.0 WOperating frequency 8.0 to 12 GHz

Pout

mln* CXY11A 5.0 mWCXY11B 10 mWCXY11C 15 mW

Unless otherwise stated , data is applicable to all types



Heatsink/ end

/ 1.6O

/v1.52

-J2.08

1 n

2.21 .j2.03 *

*\\ *

+ve

^

>

_.,_ .>

t-ve 01;|O

1.63

"1.52

Ta.

OS769

1

0.61^a*8"*i

.-2.362.03

M3.10

A: concentricity tolerance = +0.13


MAY 1977Mullard

CXY11A Page 1


Vmax. x)

V max (for less than 1 ms)

Ptot

max. CTmb = 70 °Q

Temperature

Tmt, range

T .. rangestg 6

ELECTRICAL CHARACTERISTICS (Tamb = 25 °Q

]dc (atV = 7.0V) 1)

Frequency *)

Pout

(atV = 7.0V) 3) CXY11ACXY11BCXY11C

7.5 V

9.0 V

1.0 w

-40 to +70 OC

-55 to +150 °C

Min. Typ. Max.

120 150 mA

8. 9.

5

12 GHz

5.0 8.0 - mW10 12 - mW15 20 - mW

A.M. noise to output power ratio *) -90 -100 dB

OPERATING NOTES

*) Bias must be applied in such a way that the mounting base (heatsink end) of the device

is always positive. Reversing the polarity may cause permanent damage. Care

should be taken to protect the device from transients. An 8. 2 V voltage regulator

diode to shunt the power supply is recommended for this purpose.

2) The frequency is governed by the choice of cavity to which the device is coupled.

3) The output power is normally measured in a coaxial cavity at a frequency of 9. 5 GHz.

Other centre frequencies may be supplied at 8. 5, 10. 5 and 11. 5 GHz by suffixing the

type number e.g. CXY11B/10. 5 specifies a diode giving 10 mW min. at 10. 5 GHz.

See the table below.

Diodes with these other centre frequencies will not necessarily oscillate over the

whole 8 to 12 GHz range.

The bias may be optimized to give maximum output power within the V max. and Ptot

max. ratings.

4) A.,M. noise is measured in a 1 Hz to 1 kHz bandwidth with the diode mounted in a

CL8630 oscillator.

5) It is important to ensure good thermal contact between the device and the mounting

base , which in turn should be coupled to an adequate heatsink.

6) The power supply should be low impedance voltage regulated and capable of supplying

approximately 1. 5 times the normal current , to initiate oscillation.

Minimum output

power (mW)

Test Frequency (GHz)

8.5 9.5 10.5 11.5

5 CXY11A/8.

5

CXY11A CXY11A/10.5 CXY11A/11. 5

10 CXY11B/8.5 CXY11B CXY11B/10.5 CXY11B/11.5

15 CXY11C/8.5 CXY11C CXY11C/10.5 CXY11C/11.5

I Complete oscilla

1Devices may be

tors using these devices are obtainable from Mullard Ltd. ,

selected to suit customers' specific requirements.

MullardCXYllAPage 2

GUNN EFFECTDEVICES

CXY14ACXY14BCXY14C

Gallium arsenide bulk effect device employing the Gunn effect to produce c.w. -


microwave package and conforms to the environmental requirements of BS9300

where applicable.


Operating voltage 7.0 V

Ptot max. CTmb = 70 °Q 1.0 WOperating frequency 12 to 18 GHz

Pout min. CXY14A 5.0 mWCXY14B 10.0 mWCXY14C 15.0 mW




Heatsinkend

+ve -ve fl1 -60

A= concentricity tolerance = +0.13


MAY 1977Milliard

CXY14A Page 1

7.5 V

9.0 V

1.0 W


V max. (d. c.

)

V max. (for less than 1 ms)

Ptot

max. (Tmb = 70 °C)

Temperature

Tmb range _4° to +7° °c

Tstg range -55 to +150 oq

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)

Min. Typ. Max.

Idc

(at V = 7. V) 1) - 120 145 mA

Frequency 2) 12 14 18 GHz

Pout

(at V= 7.0 V) 3) CXY14A 5.0 8.0 - mW

CXY14B 10 12 - mWCXY14C 15 20 - mW

OPERATING NOTES

1) Bias must be applied in such a way that the mounting base (heatsink end) of the device

is always positive. Reversing the polarity may cause permanent damage. Careshould be taken to protect the device from transients. An 8. 2 V voltage regulator

diode to shunt the power supply is recommended for this purpose.


3) The output power is normally measured in a coaxial cavity at approximately centre

-

band frequency. The bias may be optimized to give maximum output power within the

V max. and Ptot:

max. ratings.

4) ft is important to ensure good thermal contact between the device and the mounting

base , which in turn should be coupled to an adequate heatsink.


approximately 1. 5 times the normal current , to initiate oscillation.

Devices may be selected to suit customers'

specific requirements

MilliardCXY14APage2

GUNN EFFECTDEVICE

CXY19

Gallium arsenide bulk effect device employing the Gunn effect to produce c.w. .



where applicable.


Operating voltage (note 2) 8 to 15 V

Ptot

max. (Tmb =70°C) 6.0 W


Pout

min. (f = 9.5GHz) 100 mW





MAY 1977Milliard

CXY19 Page 1

15 V

6.0 W

-40 to +70 °C

-55 to +150 °C

Min. Typ. Max.

- 450 mA

8.0 9.5 12 GHz

100 150 mW


V max. (see note 1)

P„ _ max. (T = 70°C)tot mb '

Temperature

TmbranSe

T . rangestg 6

ELECTRICAL CHARACTERISTICS (Tamb= 25°C)

I (at V = 12V) (see notes 1 and 2)


P ^ (see note 2)out

OPERATING NOTES

1. Bias must be applied in such a way that the mounting base (heatsink end) of the

device is always negative. Reversingthe polarity may cause permanent damage.

Care should be taken to protect the device from transients.

2. Each device is measured for maximum output power at 9. 5GHz in a coaxial test

cavity. The bias is optimized for this maximum within the V max. and P max.

ratings. The operating voltage and corresponding current are quoted for this

condition on a test record supplied with each device.







5. The power supply should be low impedance voltage regulated and capable of

supplying approximately 1.5 times the normal current, to initiate oscillation.



MilliardCXY19 Page 2

GUNN EFFECTDEVICE

CXY19A

Gallium arsenide bulk effect device employing the Gunn effect to produce c.w.



where applicable.


Operating voltage (note 2) 8 to 15 V

Ptot max. (Tmb = 70OQ 6.0 WOperating frequency 8 to 12 GHz

Pout min. (f = 9.5GHz) 200 mW



Ar concentricity tolerance = +0.13


5772

JUNE 1977Mullard

CXY19A Page 1

Typ. Max.

450 - mA

9.5 12 GHz

250 . mW


V max. (see note 1) 15 V

P, max. (T =70°C) 6.0 Wtot

v mb

Temperature

T ,_ range -40 to +70 °Cmb

T range -55 to +150 °Cstg *

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Min.

Idc(at V = 12V) (see notes 1 and 2)

Frequency (see note 3) 8.

Pout <see note 2) 20°

OPERATING NOTES

1. Bias must be applied in such a way that the mounting base (heatsink end) of the

device is always negative. Reversing the polarity may cause permanent damage.

Care should be taken to protect the device from transients.

2. Each device is measured for maximum output power at 9. 5GHz in a coaxial test

cavity. The bias is optimized for this maximum within the V max. and Ptot max.

ratings. The operating voltage and corresponding current are quoted for this

condition on a test record supplied with each device.







5. The power supply should be low impedance voltage regulated and capable of

supplying approximately 1.5 times the normal current, to initiate oscillation.



MilliardCXY19A Page 2

GUNN EFFECTDEVICE

CXY19B

Gallium arsenide bulk effect n+ sandwich device employing the Gunn effect to produce

c. w. oscillations at microwave frequencies. Each device is encapsulated in a standard

microwave package and conforms to the environmental requirements of BS9300 whereapplicable.


Operating voltage ^) 8 to 15 V

Ptot max. (Tmb = 70 °C) 7.5 WOperating frequency- 8 to 12 GHz

Pout min ' <f=9.5GHz) 300 mW



Dimensions in mm

+ve 0J;|O



JUNE 1977Milliard

CXY19B Page 1


Vmax. !) 2)

15 V

Ptot

max. CTmb = 70°C)°™ 7.5 W

Temperature

Tmb ranSe

Tgtg range


Idc*>

Frequency )

Pout

2)

-40 to +70 °C

-55 to +150 °c

Min. Typ. Max.

650 900 mA

8. 9.

5

12 GHz

300 325 - mW



1) Bias must be applied in such a way that the mounting base (heatsink end) of the device

is always negative. Reversing the polarity may cause permanent damage. Care should

be taken to protect the device from transients.

2) Each device is measured for maximum output power at 9. 5 GHz in a coaxial test

cavity. The bias is optimized for this maximum within the V max. and Ptot max.

ratings. The operating voltage and corresponding current are quoted for this condition

on a test record supplied with each device.


4) The heatsink end of the device should be held in a collet or equivalent clamping system

to ensure minimum thermal resistance in the path to the mounting base. This in turn

must be coupled to an adequate heatsink. Alternatively, direct soldering, using a low

melting point solder, or an electrically conductive single loaded epoxy, such as

Epotek H40, may be used.


approximately 1.5 times the normal current, to initiate oscillation.

MilliardCXY19B Page 2

GUNN EFFECTDEVICE

CXY21

Gallium arsenide bulk effect device employing the Gunn effect to produce c.w.

oscillations at microwave frequencies. It is encapsulated in a standard microwave

package and conforms to the environmental requirements of BS9300 where appli-

cable.


Operating voltage 8.0 V

Ptot max. (Tmb = 70°C) 2.5 W

Operating frequency range 8.0 to 12 GHz

Pout typ. (at fQ= 9. 5 GHz) 50 mW



Heatsinkend

+ve -ve •];|0



MARCH 1978Milliard

CXY21 Page 1

V max. 1) 10 V

V max. (for less than 1 ms.

)

12 V

Ptot

maX*(Tmb

= 70 ° C) 2 - 5 WTmb range -40 to +70 oq

Tstg range -55 to +150 <>C


Min. Typ. Max.

Frequency range 2) 8. - 12 GHz

D.C. operating current (at V = 9.5 V) - 210 265 mA

Power output 3) 40 50 - mW

OPERATING NOTES

1) The heatsink end is positive. Bias must be applied in such a way that the mountingbase end of the device is always positive. Reversal of the bias will cause permanentdamage. Care should be taken to prevent the device from transients. An 11 V voltage

regulator diode to shunt the power supply is recommended for this purpose.


3) The power output is normally measured in a coaxial cavity at approximately mid-bandfrequency. The bias may be optimized to give maximum power output within the limits

of V max. and Ptot

max.

4) The heatsink end of the device should be held in a collet or similar clamping systemto ensure minimum thermal resistance in the path to the mounting base. This in turn

must be coupled to an adequate heatsink. Alternatively, direct soldering, using a lowmelting point solder, or an electrically conductive single loaded epoxy such as EpotekH40, may be used.

5) The power supply should below impedance voltage regulated and be capable of supply-

ing 1. 5 times the normal current, to initiate oscillation.

Devices may be selected to suit customers'

specific requirements.

MullardCXY21 Page 2

Data based on pre-production devices

CXY24A(Dev.No.

823CXY/B)

CXY24B(Dev.No.

823CXY/C)

GUNN EFFECT DEVICES

Gallium arsenide bulk effect devices employing the Gunn effect to produce c.w. oscillations at micro-

wave frequencies. They are encapsulated in metal-ceramic packages suitable for mounting in various

types of cavity. The devices will oscillate in Q-band (Ka-band), the actual frequency being determined

by the type of cavity.


Operating frequency range

Operating voltage

Operating current

Power output at 34 GHz CXY24ACXY24B

30 to 38 GHz

typ. 3.5 V

typ. 0.8 A

min. 25 mWmin. 50 mW

Dimensions in mmMECHANICAL DATA

Avoid pressure

in this area

Preferred areaof contact

O.i.

Top cap positive

Heatsink endnegative

-3.00.P 2.85

U MilliardMay 1978

CXY24A(Dev.No.

823CXY/B

CXY24B(Dev.No.

823CXY/C)

max. 6.0 V

max. note 2

max. 4.0 W-55 to +150 °C

max. +70 °C

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC134)

Transient supply voltage (note 1

)

Continuous supply voltage

Power input (note 2)

Storage temperature range

Operational stud temperature (note 3)

CHARACTERISTICS

Tamb=25°C

Frequency (notes 4,5)

Operating voltage (notes 1,2)

Operating current (note 6)

Threshold current

Power output (note 4) CXY24ACXY24B

OPERATING NOTES

1. Bias must be applied in such a way that the heatsink end of the device is always negative. Reversing

the polarity may cause permanent damage. Care should be taken to protect the device against

transient voltages.

2. Each device is supplied with a maximum supply voltage recommendation for continuous operation,

within the limits of operating voltage and power input specified above.

3. Good thermal conductivity is essential between the heatsink end of the device and the cavity.

4. Power output is normally measured in a waveguide cavity at a frequency of 34 GHz, at a voltage not

exceeding the maximum recommended supply voltage (see note 2).


6. The power supply should be low impedance, voltage regulated and capable of supplying current in

excess of the threshold current.

mm. typ. max.

30 34 38 GHz

- 3.5 5.0 V- 0.8 1.1 A- - 1.6 A

25 30 — mW50 60 - mW



May 1978

Milliard Zf

MIXER AND DETECTORDIODES

MICROWAVE MIXER/DETECTORDIODE

BAT10

Silicon Schottky barrier diode for use as a low level detector or as a low noise mixer at

microwave frequencies. The diode is plastic encapsulated with ribbon leads suitable for

mounting in stripline circuitry and conforms to the environmental requirements of BS9300

where applicable. Available as a matched pair 2/BAT10 M.


Frequency range 1. to 12 GHz

Mixer:Typical noise figure in X-band 7.0 dB

Detector

:

Typical tangential sensitivity in X-band with 100 nA bias -50 dBm

Typical current sensitivity in X-band with 50 /xA bias 5.0 nA/nW


iD-fo.i

6.4

-02.5 »•

w 105

T

Reference plane for r I admittance

All dimensions in mm 03io«

JUNE 1977Milliard

BAT10 Page 1


Electrical

Maximum peak pulsed r.f. input power at 9. 375 GHz,0.5 us pulse length

Maximum burn out (multiple r.f. spike, ANQ = 1 dB)

Temperature

Tstg range

Tamb Mn8e


Mixer

Noise figure )

v . s. w. r. Voltage standing wave ratio )

Zif

Detector

Sts

si

V.s.w.r.

Zv1

f

Intermediate frequency impedance

Tangential sensitivity )

Current sensitivity )

Voltage standing wave ratio )

Video impedance )

Noise

1.0 W20 nj

0.2 erg

55 to +150 °C

55 to +150 °C

Typ. Max.

7.0 7.5 dB

- 2:1

- 500 n

-SO _ dBm

5.0 - MA/nW

- 5:1

600 - n

12 17 dB

NOTES

1. Measured in a 50 fi test mount at f = 9.375 GHz, rectified current = 2.0 mA, load

resistance = 20 0, i.f. = 45 MHz and i.f. noise figure = 1. 5 dB. BS9300.

2. Measured with respect to 50 fi at f = 9.375 GHz, rectified current = 2.0 mA, and

load resistance = 10 fi. BS9300.

3. Measured in a 50 £2 test mount at f =9.375 GHz, rectified current = 2.0 mA, load

resistance = 20 fiand i.f. = 45 MHz. BS9300.

4. Measured at f = 9. 375 GHz with 2. MHz bandwidth and 100 fiA bias.

5. Measured at f = 9. 375 GHz at an input power of 1. jiW and 50 fiA bias.

6. Measured with respect to 50 fiat f = 9.375 GHz, 100 nA bias and c.w. input less than

2.0 /xW. BS9300.

7. D.C. measurement with 1.0 mV max. and 50 /iA bias.

MilliardBAT10P&ge2


BAT10

No

Noise figure

(dB)

7.4

7.2

7.0

6.8

6.6

f= 9.375 GHz

i.f. = 45 MHzN

jf= 1.5 d B

1.5 2.0 2.5 3.0 3.5 4.0

Rectified current I ImA)

TYPICAL NOISE FIGURE AS A FUNCTION OF RECTIFIED CURRENT(MIXER APPLICATION)

450

I.Ff

impedance

(fl)

(00

350

300

MillI.R=45MHz

1.0 2.0 3.0 4.0

Rectified current I (mA)

TYPICAL I. F. IMPEDANCE AS A FUNCTION OF RECTIFIED CURRENT(MIXER APPLICATION)


Localoscillator

power(rrW)

5.0

4.0

3.0

2.0

1.0

f= 9.375 GHz

1.0 zo 3.0 4.0


TYPICAL LOCAL OSCILLATOR POWER AS A FUNCTION OF RECTIFIED CURRENT(MIXER APPLICATION)

MullardRATIO Page 4


BAT10

Sts

Tangential

sensitivity

(dBm)-50

-C9

-48

-LI

-46

-45

f= 9.375 GHz

Video bandwidth = Oto 2 MHzi

JIJ

/

f

I

1

11

1

.

,

...

ZvVideo

impedance

(A)

50 100 150 200

D.C. forward bias (jiA)

TYPICAL TANGENTIAL SENSITIVITY AS A FUNCTION OFD.C. FORWARD BIAS CURRENT (DETECTOR APPLICATION)

MS73

1500

1000

500

50 no CO 200 250 300D.C. forward bias (>iA)

TYPICAL VIDEO IMPEDANCE AS A FUNCTION OFD.C. FORWARD BIAS CURRENT. (DETECTOR APPLICATION)

MilliardRATIO Page 5

zs****,

$o 3109

TYPICAL ADMITTANCE AS A FUNCTION OF FREQUENCY

MilliardBAT 10 Page 6

MICROWAVEMIXER DIODE

BAT11n

Silicon Schottky barrier low noise mixer diode mounted in a L.I.D. type envelope. •

Primarily intended for hybrid integrated circuit applications in X-band. It con-

forms to the environmental requirements of BS9300 where applicable. Available

as a matched pair 2/BATH M.


Typical noise figure in X-band 6.5 dB

Frequency range up to 12 GHz

MECHANICAL DATA Dimensions in mm

Contactfaces

Contact

D7511

Contact faces are gold plated ,- 5 /tin over 1. 27 ycm of nickel.

JUNE 1977Mullard

BATH Page 1


Electrical

Max. burn-out (r.f. spike)

Max. burn-out (multiple d. c. spike)

Temperature

T8tg

range

amb

ELECTRICAL CHARACTERISTICS (Tamb= 25°C)

20 nj

0.2 erg

30 nj

0.3 erg

-55 to +150 °C

-55 to +150 °C

Min. Typ. Max.

Dynamic

NQ Noise figure (see note 1) - 6.5 7.0 dB

Z rf R.F. impedance spread referred

to 50ft bounded by co-ordinates

(see note 2).

Z.. Intermediate frequency

impedance (see note 3) 280


6 - jO. 3 0.4 - jO.3

6 + j0. 3 0.4 + J0.3

320 380 3

- 12 GHz

NOTES

1. Measured at 9. 375GHz ± 0. 1GHz, 1.5mA rectified current, R. = 1512. N inc-

ludes Nif= 1.5dB with 45MHz intermediate frequency. BS9321/1406.

2. Measured at 9.375GHz ± 0. 1GHz, 1.5mA rectified current, RL = 15fi. BS9321/

1409.

3. Measured at 9. 375GHz ± 0. 1GHz, 1.5mA rectified current, R. = 15J2, inter-

mediate frequency 45MHz, BS9321/1405.

4. Maximum out of balance condition for a matched pair:

a) 0. 1mA rectified current.

b) R. F. admittance 1. 15: 1 with other diode normalized to 50fi.

5. The diode maybe mounted on microstrip, using conventional thermocompression

or micro -gap bonding techniques. Alternatively, the application of a single loaded

epoxy, such as Epotek H40, may be used, followed by polymerisation at 150°C

for 15 minutes. The force applied to the-L.I.D. must not exceed 147mN (15gf).

6. Devices may be specially selected with the r.f. impedance measured at a cust-

omer' s specific frequency in the range 8. 4 to 12GHz.

Milliard' *^ BATH Page 2


BAT11

D5855

If10

ImA)

/

/*> /

s/

m

2 U 6 VF (V)

?n

?n3\J

*°Ir

2 1 VR(V)

TYPICAL D.C. CHARACTERISTIC

MilliardBATH Page 3

Milliard BATH Page 4

BAT 38

MICROWAVE MIXER DIODE

Subminiature silicon Schottky barrier mixer diode for use at Q-band (Ka-band) frequencies. Where

applicable, this device conforms to the environmental requirements of BS9300.


Frequency range

Noise figure typ.

26 to 40 GHz

8.5 dB

MECHANICAL DATA*2.56*2.S3 >

1

02.51max

1

Dimensions in mm

I

f TA

• 1.42 -

TA

„ U2 „w1.17

t

„ 1.32 „

1

. 1.8 „ * 1.32 .* 1.17 * * 1.22 *

)

" 1.7 •

< 7.16

H 1.22 *

"6.65

XX s reference plane

AA ss concentricity tolerance =+ 0.15

DMlTa

Fig.1

The cathode (positive) is marked red.

The cathode indicates the electrode which becomes positive in an a.c. rectifier circuit

Z! Mullard ¥June 1978

BAT 38

J\.RATINGS


Burn-out

R.F. spike max.

Peak pulse power (tp = 0.2 /us) max.

The devices are 100% burn-out screened to the above specifications at 34 GHz.

0.04

0.5

stg

Tamb

"R

'F

Zjf

-55 to +100 oc

-55 to +100 °C

typ. 2.0 MA

typ. 2.0 mA

typ. 8.5 dB< 10 dB

typ. 5.5 dB

Temperature

Storage temperature

Ambient temperature

CHARACTERISTICS Tamb = 25°C

Reverse current Vr = 0.5 V

Forward current Vp = 0.5 V

Overall noise figure

f = 34.86 GHz, rectified current = 0.5 mAN includes Njf of 1.5 dB (BS9321/1406)

Conversion loss

Noise temperature ratio

I.F. = 45 MHz

Voltage standing wave ratio*

f = 34.86 GHz, rectified current = 0.5 mAR L =15fi(BS9321/1409)


f = 34.86 GHz, rectified current = 0.5 mAR L = 15 SI, i.f. = 45 MHz (BS9321/1405)


MATCHED PAIRS

The diodes can be supplied in matched pairs under the type number 2/BAT38M. The diodes are

matched to ±10% on rectified current and within 150 £2 i.f. impedance.

1.6:1

erg

W

typ. 1.4:1

< 1.8:1

typ. 900 n700 to 1100 n

26 to 40 G

* Standard test holder.

June 1978

Mullard r?

BAT 38

3.0

2.0

1.0

R load -25fl

1

1.0 2.0 3.0 40 Local oscillator power ImWI

Fig.2 Typical rectified current as a function of local oscillator power at 34.86 GHz

m 15

o 13

1 1 1 1

i.f. = 45MHzN

j(= 1.5dB

1I

I

1I

\\1

L

\>V

200 400 600 800 1000 1200

Local oscillator power (gW)

Fig.3 Typical overall noise figure as a function of local oscillator power at 34.86 GHz

MilliardJune 1978

MICROWAVEMIXER DIODES

BAT39BAT39A

Subminiature silicon reversible Schottky barrier diodes primarily intended for low noise

mixer applications in X-band. They are intended as retrofits for AAY39 and AAY39A.

Available in a matched pair as 2/BAT39M.


Operating frequency 1.0 to 18 GHz

Noise figure at X-band BAT39 typ. 6.0 dB

BAT39A typ. 7.0 dB

Unless otherwise stated, data is applicable to both types.


»!:S

rrA

1.A2"1.17

2.562.53

1.32

1.22

02.51max

1.81.7

7.16

6.65

1.321.22"

XX = reference plane All dimensions in mmAA = concentricity tolerance =+ 0.15

U2"1.17

02527a

Terminal identification

The positive end (cathode) is marked red.

The positive end indicates the electrode which becomes positive in an a.c. rectifier

circuit.

ACCESSORIES

WG16 holders to fit these diodes are available from Marconi Instruments Ltd.

,

(Sanders Division), Gunnels Wood Road, Stevenage, Herts.

MilliardJUNE 1977 BAT39 Page 1

RATINGS In accordance with the Absolute Maximum Ratings System (IEC134)

Burn-out f= 9. 375 GHz

Multiple d. c. spike

Multiple r. f. spike (spike width at

half peak power = 2 /xs)

Peak pulse power

f = 9. 375 GHz, tp= 1.0 /xs

Temperatures

Storage temperature

Ambient temperature

CHARACTERISTICS

Reverse current V^ = 0. 5 V

Forward current VF = 0. 5 V


f = 9. 375 GHz, RL = 15 8, BAT39rectified current = 1. mA BAT39AN includes Ntf = 1. 5 dB

(BS9300/1406 Method B)

'stg

Tamb

Min.

5.5

0. 1 erg

0.05

0.5

erg

W

-55 to +100 °C

-55 to +100 °C

T -amb 25 °C

fyp. Max.

2.0 MA

7.0 mA

6.0 6.5 dB

7.0 7.5 dB

Conversion loss BAT39BAT39A Lc

4.2

5.0

dB

dB


I.F. = 45 MHz (BS9300/1407) BAT39BAT39A

NrNr

- 1.1:1- 1.2:1

Voltage standing wave ratio

f = 9. 375 GHz, RL = 15 fi,

rectified current = 1. mA(BS300/1409)

Measured in standard test holder

v. s.w. r. 1.43:1


f = 9.375 GHz, RL = 15 £2

rectified current = 1.0 mA(BS9300/1405)


Zif 250

1.0

450 fi

18 GHz


MICROWAVE BAT39MIXER DIODES BAT39A

OPERATING NOTE

Optimum performance is obtained with BAT39 and BAT39A when the local oscillator

drive is" adjusted to give a diode rectified current of 1. mA and the load resistance is

restricted to 100 fi max.


Mixer performance at other than Test Radio Frequency

Measured overall noise figure

f = 16.5 GHz, Nif= 1.5 dB, i.f. =45 MHz N<, typ. 7.0 dB

f= 3.0 GHz, Nif= 1.5 dB, i.f. =45 MHz N typ. 5.5 dBf= 9.5 GHz, i.f. = 3.0 kHz N typ. 29 dB

Signal/flicker noise at 9. 5 GHz

Measured at 2. kHz from carrier in

a 70 Hz bandwidth typ. 131 dB

Detector performance

Tangential sensitivity at 9. 375 GHz,

1 kHz to 1 MHz video bandwidth,

IF (bias) = 50 nA (BS9300/1411) Stg

typ. -52 dbm

A.C. video impedance

IF (bias) = 50 fiA (BS9300/1403) Zr typ. 800 fi

MullardBAT39 Page 3

D7396

^ 6.0

•

oa

| 5.0

o

4.0

3.0

-

2.0

1.0

1.0 2.0 3.0 4.0

Rectified current L(mA)

Typical rectified current as a

function of local oscillator power



BAT39BAT39A

«.b"

8 0-L

I

65 - I

\\

\

6.0 —

\

5.5 _1.0 2.0 3.0 4.0

Rectified current (mA)

Typical noise figure as a function

of rectified current

MullardBAT39 Page 5

BAT50BAT50R

Coaxial silicon Schottky barrier diodes for use in pre-tuned X-band low noise mixer <—circuits. They are intended for use as low noise retrofits at X-band frequencies for

coaxial mixer diodes types AAY50, AAY50R etc. The two types have identical dimensionsand characteristics but the polarity is reversed. The pair are intended for use in balanced

mixer circuits and conform to the environmental requirements of BS9300 where applic-

able.


Operating frequency max. 12 GHz

Noise figure typ. 6.2 dB

MECHANICAL DATA

Conforms to BS3934 SO-26

Dimensions In mm

02S01Q


BAT50 Pin cathode

Body (red spot) anode

ACCESSORIES

BAT50R Pin anode

Body (green spot) cathode

Holders to fit these coaxial diodes are available in the U. K. from Marconi Instruments(Sanders Division) Gunnels Wood Rd. , Stevenage, Herts.

Note 1. The device is designed to make contact on this open face.

Note 2. Cone tapers to a radius of 0. 13 mm nominal.

MilliardJUNE 1977 BAT50 Page 1

RATINGS In accordance, with the Absolute Maximum Rating System (IEC134)

Burn-out

R. F. spike max. 0. 2 erg

Peak pulse power

tp= 0. 5 us

Temperatures

Storage temperature

Ambient temperature

CHARACTERISTICS

Reverse current Vo = 0. 5 V

Forward current Vp = 0. 5 V

Overall noise figure *)

f = 9. 375 GHz, rectified current = 1. mA,RL = 15 fi, N includes 1% = 1. 5 dB

Conversion loss


I. F. = 45 MHz

Voltage standing wave ratio *) 2)

f = 9375 ± 10% MHz, rectified current 1. mARL = 15 fi, NQ includes Nif = 1. 5 dB



max. 1.0 W

Tstg

-55 to +100 °C

^amb -55 to +100 °C

Tamb= 25 °c

fc 3. /iA

lF 7.0 mA

Notyp.

max.

6.2 dB

6.8 dB

v. s.w. r. max.

4.4 dB

1.1: 1

1. 43: 1

min. 300 n

max. 500 Q

max. 12 GHz

1) Measured in standard holder (K1007, Issue 3, Section 8B3. 3. 1/2.)

2) The nominal rectifier admittance at a plane 7.01 mm inside the body from the open

end is

—— + -J— mho.83.5 350


MICROWAVE BAT50MIXER DIODES BAT50R

OPERATING NOTE

These devices will exhibit their inherent improved noise figure performance over the

frequency range 1.0 to 12 GHz, but are not recommended for use as direct replacements

in pre-tuned mounts designed for the AAY50 type coaxial diode, at other than X-band

frequencies.


Signal/Flicker noise ratio

f = 9. 5 GHz. Measured at 2 kHz from carrier

in 70 Hz bandwidth typ. 131 dB

Detector performance

Tangential sensitivity, f = 9. 375 GHz,video bandwidth = 1. MHz, Ip (bias) = 50 pA S^ typ. -52 dBmvideo impedance, IF (bias) = 50 /iA Zy typ. 800 Q



BAT51BAT51R

The BAT51 and BAT51R form a reverse pair of mixer diodes for use in balanced mixer

circuits at J -band (Ku band). The diodes are of silicon Schottky barrier construction and

are intended as retrofits for AAY51 and AAY51R. They are packaged in the standard

coaxial outline for this band , similar to 1N78 types. The encapsulation is hermetically

sealed and the diodes conform to the environmental requirements of BS9300 where

applicable. Available as a matched pair as 2/BAT51 MR.


Frequency range 12 to 18 GHz



MECHANICAL DATA Dimensions in mm-

DO- 37

5.59,5.49

1

19.4318.67

-m 07405

A = concentricity tolerance = ± 0. 35

*These limits apply only over 10. 32 dimension


BATS1 Pin cathode

Body (red) anode

BAT51R Pin anode

Body (green) cathode

JUNB 1978Milliard

BAT51 Page 1

RATINGS la accordance with the Absolute Maximum System (IEC134)

Burn-out

f = 9. 375 GHz, multiple r.f. spike,

spike width at half peak power = 2 ns

Peak pulse power

f = 9. 375 GHz, tp= 1.0 *is

Temperatures

Storage temperature

Ambient temperature

CHARACTERISTICS

Reverse current V^ = 0. 5 V



f = 13.5 GHz,N includes N

tf= 1. 5 dB

Measured in JAN 201 holder (BS9300/1406 Method A)

Conversion loss


I.F. = 45 MHz (BS9300/1407)


f = 13.5 GHz


*stg

*amb

Zif

max. 0. 05 erg

0.5 W

-55 to +100

•55 to +100

oc

°C

Tamb = 25 °C

max.

typ.

typ.

max.

0.2

7.0

7.0

7.5

uA

mA

dB

dB

5.2 dB

1.1: 1

1.5: 1

min. 250 Q

typ. 350 Q

max. 450 Q

12 to 18 GHzOperating frequency range f

FINISH

The bodies are cadmium plated in order to be compatible with an aluminium holder

MATCHED PAIR

Maximum unbalance conditions, Z^ = 25 fi, rectified current 0. 1 mA.



BAT51BAT51R

D7S12

4.0

power(mW)

3.0

2.0

1.0

1.0 2.0 3.0 4.0 Rectified current I (mA)

Typical rectified current as a function of local oscillator power

D7SI3

10.0

Noise figure

No _1_

MB) 1

9.0 I

\1

8.0

7.0

6.0

1.0 2.0 3j0 4j0 Rectified current l (mA)

Typical noise figure as a function of rectified current

MullardBAT51 Page 3


BAT52BAT52R

The BAT52 and BAT52R form a reverse pair of mixer diodes for use in balanced mixercircuits at J-band (Ku band). The diodes are of silicon Schottky barrier construction andare intended as retrofits for AAY52 and AAY52R. They are packaged in the standardcoaxial outline for this band, similar to IN78 types. The encapsulation is hermeticallysealed and the devices conform to the environmental requirements of BS9300 whereapplicable. Available as a matched pair as 2/BAT52MR.

Frequency range

Noise figure


typ.

12 to 18

8.0

GHz

dB

Unless otherwise stated , data is applicable to both types.

MECHANICAL DATA Dimensions in mm •

DO- 37

I I

,4.80 t f'4.72

19.4318.67

- D7405

A = concentricity tolerance = ±0. 35

*These limits apply only over 10. 32 dimension


BAT52 Pin cathode

Body (red) anodeBAT52R Pin anode

Body (green) cathode

JUNE 1978Milliard

BAT52 Page 1

RATINGS In accordance with the Absolute Maximum System (IECI 34)

Burn-out

f = 9. 375 GHz, multiple r.f. spike,

spike width at half peak power = 2 ns

Peak pulse power

f = 9. 375 GHz, tp= 1.0 ns

Temperatures

Storage temperature

Ambient temperature

CHARACTERISTICS

Reverse current Vr = 0. 5 V



f = 13.5 GHz,N includes Nif

= 1. 5 dB

Measured in JAN 201 holder (BS9300/1406 Method A)

Conversion loss


I.F. = 45 MHz (BS9300/1407)


f = 13. 5 GHz , rectified current = 0. 9 mA


stg

amb

Zif

max. 0. 05 erg

max. 0.

5

W

-55 to +100 °C

-55 to +100 °C

Tamb = 25 °C

max. 0.

2

nA

typ. 7. mA

typ.

max.

min.

typ.

max.

8.0 dB8.5 dB

5.2 dB

1.1: 1

1.5:1

250 G

350 Q

450 a

12 to 18 GHzOperating frequency range f

FINISH

The bodies are cadmium plated in order to be compatible with an aluminium holder

MATCHED PAIR

Maximum unbalance conditions, Z^ = 25 fl, rectified current 0. 1 mA.



BAT59

Subminiature silicon Schottky barrier mixer diode for use at Q-band (Ka-band). Whereapplicable, this device conforms to the environmental requirements of BS9300.





•!:B

TT

U2"1.17'

,2.562.53

1.321.22'

XX s reference plane

AA = concentricity tolerance =+ 0.15

02.51max

1.81.7'

7.166.65"

1.321.22"

1.A2"1.17

"

D2S27Q

The cathode (positive) is marked red.

The cathode indicates the electrode which becomes positive in an a. c. rectifier circuit.

JUNE 1978Muttard

BAT59 Page 1

RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134)

Burn-out (at 9. 375 GHz)

R.F. spike

Peak pulse power (tp= 0. 2 ps)

Temperature

Storage temperature

Ambient temperature

CHARACTERISTICS

Reverse current Vr = 0. 5 V



f = 34. 86 GHz , rectified current = 0. 5 mAN includes Nif of 1. 5 dB (BS9321/1406)

Conversion loss


I.F. =45 MHz Nr 1.6:1

Voltage standing wave ratio *)

f= 34. 86 GHz, rectified current = 0.5 mA V8Wr tJrP* 1,4: l

RL= 15 SI (BS9321/1409)

v.. . . < j g . j

' Intermediate frequency Impedance

f= 34.86 GHz, rectified current = 0.5 mA typ. 900

RL = 15 a, i. f. = 45 MHz (BS9321/1405)Mf 700 to 1100

Operating frequency range f 26 to 40 GHz

MATCHED PAIRS

The diodes can be supplied in matched pairs under the type number 2/BAT59M. The

diodes are matched to ±10% on rectified current and within 150 Q i. f. impedance.

max. 0.04 erg

max. 0.5 W

Tstg -55 to +100 oc

*amb -55 to +100 °C

Tamb~ 25 °C

iR typ. 2.0 MA

h typ. 2.0 mA

Notyp.

<8.5

10

dBdB

Lc typ. 5.5 dB

!) Standard test holder.


BAV22BAV22R

Coaxial Schottky barrier diodes for use in pre-tuned X- and S-band low noise mixer

circuits. The diodes are suitable as replacements for most British coaxial point contact

types in these bands, for example, GEM3, GEM4, CV7108, CV7109, CV2154 and

CV2155. They conform to the environmental requirements of BS9300 where applicable.

Available as a matched pair as 2/BAV22MR.


Operating frequency max. 12 GHz

Noise figure at X-band typ. 7.0 dB

at S-band typ. 6.0 dB

MECHANICAL DATA



Dimensions in mm

02501a


BAV22 Pin cathode

Body (red spot) anode

BAV22R Pin anodeBody (green spot) cathode

Note 1. The device is designed to make contact on this open face

Note 2. Cone tapers to a radius 0. 13 mm nominal

JUNE 1977Milliard

BAV22-Page 1


Electrical

Maximum peak pulse power

(9.375GHz, 0.5/iS pulse length) 1.0 WMaximum burn-out

multiple r. f. spikes, ANQ = ldB

5000 d.c. spikes,

Temperature

T rangestg

T , rangeamb °

ELECTRICAL CHARACTERISTICS (T&mb= 25°C)

N Noise figure (see note 1)

N Noise figure (at 3GHz)

v. s. w. r. Voltage standing wave

ratio (see note 2)- - 1.43:1

v. s. w. r. Voltage standing wave

ratio (at 3GHz) - 1.2:1

20 nj

0. 2 erg

35 nj

0. 35 erg

55 to +100 °C

55 to +100 °C

n. Typ. Max.

7.0 7. 5 dB

6.0 - dB

Z. f Intermediate frequency

impedance (see note 3) 300 - 550'if

NOTES

1. Measured at 9. 375GHz, 1mA rectified current, RL = 15fl. NQ includes Nif=1.5dB

with 45MHz intermediate frequency. BS9321/1406.

2. With respect to CV2154 holder at 9. 375GHz and 1mA rectified current, RL = 15fi.

BS9321/1409.

3. Measured at 9.375GHz, 1mA rectified current, RL = 15fi, i.f. = 45MHz. BS9321/

1405.

Milliard ^-^


BAV22BAV22R

— 20

iA)10jIfrlfT

/*>/

/s~ 2 4 6 8

VF (V)

IR (pA)

1

li 100-10 8 6 U 2

Vr(V)

TYPICAL D.C. CHARACTERISTIC

MilliardRAV22 - Page 3

OS86S

r*

c 500aai

E

U.*

~ 450

400

350

300 ,

D58S8

to•o

5 7.6O) I"•-

1in

1c 1

1 no

l

I

7.21

11

7.0

6.8

2.0 4.0


2 4


TYPICAL I.F. IMPEDANCEAGAINST RECTIFIED CURRENT

TYPICAL OVERALL NOISE FIGUREAGAINST RECTIFIED CURRENT

D5867

gE

- 4.0

o

l_

G 3.0in

_u_i

2.0

1.0

2X) 4.0


TYPICAL LOCAL OSCILLATOR POWERAGAINST RECTIFIED CURRENT

35888

00o

z<3

+ 0.25

-0.25

-0.50

-0.75

-100 -50 50 100

Ambient temperature Tamb (*C)

TYPICAL CHANGE IN OVERALL NOISEFIGURE AGAINST TEMPERATURE

MilliardBAV22 - Page 4

BAV46

X-BAND MIXER/DETECTOR DIODE

Silicon Schottky barrier diode in DO-23 (1N23) outline specially designed for use in Doppler radar

systems and intruder alarms where low Vf noise and high sensitivity are required. May be used for

both mixer and detector applications.


Mixer mode

Voltage output for —90 dBm input power at X-band

1/, noise at a frequency 1 Hz to 1 kHz from carrier

Detector mode

Tangential sensitivity in bandwidth to 2 MHz

typ.

typ.

40 mV

1.0 mV

typ. —55 dBm

MECHANICAL DATACompatible with J.E.D.E.C. DO-23

Dimensions in mm

20.5

19.5

0l867o

A = concentricity tolerance = + 0.2

Terminal identification: diode symbol indicates polarity

Accessory: collet type 56321 (see page 4) converts BAV46 to DO-22 outline

c? Milliardr

February 1979

BAV46

RATINGS


Storage temperature range Tstg—20 to +100

Ambient temperature range for operation TamD —20 to +100

Reverse voltage Vr max. 2

Forward current lp wax. 10

CHARACTERISTICS (Tamb = 25 °C)

Forward voltage at lp =1 mA

Reverse current at Vr = 2 V

Mixer mode

Voltage output at X-band (notes 1 and 2)

1/fnoise (note 3)

Detector mode

Tangential sensitivity (note 4)

Video impedance (note 5)

VF

'R

vo

Nf

Nf

stssts

typ-

max.

mm.typ.

typ.

max.

mm.typ.

typ.

0.5

2

15

40

1.0

2.0

-52-55

850

OC

°C

V

mA

V

i"A

MVMV

J"V

MV

dBmdBm

Notes

1. Mixer operated with d.c. bias of 35 juA and r.f. bias of -18 dBm, giving a total bias of 42 juA.

2. Measurement made using Mullard CL8960 doppler radar module, output power 10 mW (typ.). The

input power to the mixer of -90 dBm is a signal 100 dB down on the output power from a typical

CL8960 with signal + noise at 18 dB (min.).

noise

A return signal, 100 dB down on radiated power, is equivalent to that achieved from a man target

of radar cross-section 1.0 m2 at a range of 15 m when operating the CL8960 with a 5 dB antenna.

February 1979

1r

Mullard V

X-band mixer/detector diode BAV46

Measurement circuit:

+7V

R1hookn

Y A.F. terminal

0BAV4.6 in

CL8960

Measurement amplifier

bandwidth 1 Hz to IkHz

Z iB >100kn

CI

~x

R2iokn

—o

MKJ

"\

N.B. a) The current lD should be approximately 35 nA with the Gunn device disconnected andapproximately 42 nA with the Gunn device operational and the antenna operating into

free space.

b) The coupling capacitor C1 should have a small impedance compared with Z;n.

3. Noise measured at a frequency 1 Hz to 1 kHz from carrier with a d.c. bias of 50 /iA.

4. Bandwidth to 2 MHz and a forward bias of 50 nA.

5. Measured with a forward bias of 50 ftA.

OPERATING NOTES

Care must be taken when making measurements that the precautions described in the operating notesare observed and that test equipment does not introduce transients.

1. The mixer diode has a low junction capacitance and may be damaged by transients of very shortduration. It is therefore recommended that soldering irons are isolated from the mains supplywhen soldering to the user's mixer a.f. terminals.

2. Precautions similar to those required for CMOS devices are necessary, namely:

(a) Earthed wrist straps should be worn.

(b) Table tops or other working surfaces should be conductive and earthed.

(c) Anti-static clothing should be worn.

(d) To prevent the development of damaging transient voltages, the device should not be inserted

or removed from the user's circuit with the d.c. power applied.

3. It is recommended that the user incorporates a mixer protection circuit. A suitable circuit consists

of two BA317 diodes connected in parallel but with one diode reversed, together with a parallel

10 nF capacitor. This circuit should be connected in close proximity to the mixer a.f. and earth

terminals and has been found to afford a suitable degree of protection.

4. A d.c. bias level of at least 30 pA must be maintained to ensure adequate mixer performance.It may be increased to 100 /xA without affecting sensitivity or noise level.

z> Milliard rFebruary 1979

BAV46

COLLET 56321 Dimensions in mm

6.35

6.25

7.42

f

6.35

6.25

All dimensions in mm5.05

"4.95D3H5

February 1979

Milliard Z!

X-Band mixer/detector diode BAV46

60Tangential

sensitivity

(-dBm)

55

50

45

40

35

30

isured at 10.68 GHzHz video bandwidth

n:10 20 30 40 50 60 70 80 90

D.C. forward bias(pA)

Videoimpedance

(fl)

10J

10J 10* 10

s

D.C. forward bias (jjA)

U MullardFebruary 1979 5

BAV72

MICROWAVE MIXER DIODE

Silicon Schottky barrier mixer diode for use in low noise mixer applications in Q-band. It conforms to

the environmental requirements of BS9300 where applicable.


Frequency range

Noise figure

26 to 40

10

GHz

dB


*2.2 1.63max

v1.5tf

0.38.0.25

2.001.80

A - concentricity

tolerance - ± 0.15

5.204.84

1.601.52

2\

J

1.631.68

0.380.25

OS23S

Terminal identification: red end indicates cathode

V MilliardJuly 1978

BAV72

max. 0.04 erg

max. 1.0 W-55 to +150 °C

-55 to +150 OC

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Burn-out (r.f. spike) (note 1

)

Burn-out, peak pulse power

Storage temperature range Tstg

Ambient temperature range Tamb

CHARACTERISTICS

Tamb = 25 C

Static

Reverse current (Vr = 0.5 V)

Forward current (Vp = 0.5 V

Dynamic

Noise figure (note 2)

Voltage standing wave ratio (note 3)

Intermediate frequency impedance (note 4)

Frequency range

Conversion loss (note 5)

Noise temperature ratio (note 6)

Notes

1. Local oscillator frequency = 9.375 GHz, number of pulses = 6 x 10^, pulse duration = 2 ns at half

peak energy, p.r.f. = 2000 p.p.s., load resistance = J2. Tamij= 25 °C.

2. Measured with a local oscillator frequency of 34.86 GHz, l = 0.5 mA, load resistance = 15 J2,

i.f. = 45 MHz, BS9300 No. 1406.

3. Measured with a local oscillator frequency of 34.86 GHz, l = 0.5 mA, load resistance = 15 SI,

BS9300 No. 1409.

4. Measured with a local oscillator frequency of 34.86 GHz, l = 0.5 mA, load resistance = 15 Si,

i.f. = 45 MHz, BS9300 No. 1405.

5. Measured at 34.86 GHz, 450 juW local oscillator power level and load resistance = 1 kft.

6. Measured at 34.86 GHz and i.f. = 45 MHz.

7. The diodes are measured in fixed tuned Q-band waveguide mounts. Details may be obtained from

Mullard Ltd.

'R max. 0.2 MAif min. 0.5 mA

No max. 10 dB

v.s.w.r. max. 1.8:1

Z|.f. min. 700 nmax. 1100 a

f min. 26 GHzmax. 40 GHz

Lc typ. 5.9 dB

N r typ. 1.4:1

July 1978

Mullard U

Microwave mixer diode BAV72

3.0

2.0

1.0

R,00d«2sn

10 2.0 3.0 40 Local oscillator power |mW)

Typical rectified current as a function of local oscillator power at 34.86 GHz

D«2Wa 16

1 1 1 1

« i.f.«45MHzN

jfr l.SdB

R|ooda 25a

31

1

1 U

g 1>o

I

12 1

1

1

I}

,

10 K>s.>^

8

200 400 600 800 1000 1200

Local oscillator power (jjW)

Typical overall noise figure as a function of local oscillator power at 34.86 GHz

Zf MilliardJuly 1978

MICROWAVEDETECTOR DIODE

BAV75

Silicon Schottky barrier diode in SO-86 outline, specially designed for use in

doppler radars where high detector sensitivity is required. It conforms to the

environmental requirements of BS9300 where applicable.


Frequency range 8. to 12 GHz

Tangential sensitivity (typ. ) with

100 jxA bias -50 dBm


Conforms to B. S. 3934 SO-86

2.36m2.03

--

u

1 I

?

!

08 01.60 J

f'

01.60 03.1.52 3.

10

1.

1

98 1.52

1 |

1)0

-

1'

1.6 )

0.6

0.&

1__

2.21

^ 1.5 2 2.03

A : concentricity tolerance = +0 13


H

JUNE 1978Milliard

BAV75 Page 1


Electrical

Peak pulse power (max. ) at 9. 375 GHz0.5 /is pulse length

Temperature

T rangestg

B

ambrange

0.75

-55 to +150

-55 to +150

W

ELECTRICAL CHARACTERISTICS (at T = 25 C)amb


(see notes 1,2, and 3)

Video impedance (see notes

4 and 5)

Tangential sensitivity (see

notes 1 and 2)

Flicker noise (see notes 4

and 6)

-49

typ.

211

310

-50

10 15

dBm

dB

NOTES

1. Measured at 10. 687 GHz with lOOuA forward bias.

2. Measured in a reduced height waveguide mount, (Sanders 6521, modified).

3. R. F. input power less than 5.0uW.4. Measured with 100 uA forward bias.

5. Maximum d.c. input voltage = l.OmV.

6. a) Measured at an i. f. of 1kHz with 50Hz bandwidth.

b) 1 /j noise remains constant with a forward bias not exceeding 250jiA.

D5406

£ 55

52

I |

1

1

1

1

1

1

1

to 2MHz video bandwidthForward bias = IOOjjA

Note : Device is tuned to a v. s.w.r.

of less than 2:1 at each frequencyf

4'

I

*L

Ns1

L

- \\

k

9 10 11 12

Frequency(GHz)

TANGENTIAL SENSITIVITY AS A FUNCTION OF FREQUENCY

MilliardBAV75 Page 2


BAV75

a 1800

o. 1600£

1400

1200

1000

800

600

400

200

ImV input (max)

-

50 100 150 200 250 300

D.C. forward bias (uA)

VIDEO IMPEDANCE AS A FUNCTION OF D. C. FORWARD BIAS


E 51

iH 49

5 47

45

43

41

39

37

35

33

i

1f

Ij

Measured at 10.687GHzin untuned holder.

to 2 MHz bandwidth

!

_t

!

11

I

7r|

/

//

r•

—

,

fi

50 100 150 200 250 300

D.C. forward bias (jjA)

TANGENTIAL SENSITIVITY AS A FUNCTION OF D.C. FORWARD BIAS



BAY96ABAY96BBAY96CBAY96D

A range of sub-miniature reversible low noise Schottky barrier mixer diodes. The

planar technology employed imparts a high degree of reliability and reproducability.

The metal -ceramic case is hermetically sealed and the devices conform to the



Maximum noise figure in X-band

BAV96A 7.5 dB

BAV96B 7.0 dB

BAV96C 6.5 dBBAV96D 6.0 dB



M.Q.M.

02.2max

.1.63

1.58

0.38.0.25

2.00

1.80

1.60

1.52

30*

i\

5.204.84

-1.63

1.58

0.380.25

All dimensions in mm A = concentricity tolerance = 10.15



Electrical

Maximum burn out (see note 1) 15

0.15nj

erg

FEBRUARY 1978Mullard

BAV96A-Page 1

RATINGS (ABSOLUTE MAXIMUM SYSTEM) (Contd.

)

Temperature

Tstg range -55 to +150 °C

Tamb range -55 to +150 °C

ELEC7TRICAL CHARACTERISTICS CTamb = 25°C)

NQ noise figure (see note 2) Mln. Typ. Max.

BAV96ABAV96BBAV96CBAV96D

v. s. w. r. (see note 3)

BAV96ABAV96BBAV96CBAV96D

Zif i. f. impedance (see note 4) 250

Sfg tangential sensitivity (see note 5)

Sts (see note 6)

7.0 7.5 dB6.5 7.0 dB6.0 6.5 dB5.5 6.0 dB

1.7: 1 2.0: 1

1.4: 1 1.6: 1

1.4: 1 1.6: 1

1.3: 1 1.5: 1

- 450 a

-52 - dBm

-54 - dBm

NOTES

1. Burn out is defined as the r. f. pulse energy necessary to cause ldB degradation

in noise figure when the diode is subjected to 2 x M)8 pulses of 2ns width.

2. Measured at 9. 375 ± 0. 1GHz. The noise figure includes i.f. amplifier contri-

bution of 1. 5dB, i.f. 45MHz, d. c. return for diode 15$2 max. , rectified current

1mA. BS9321/1406.

3. Measured in a reduced height waveguide mount under the same test conditions as

in note 2. BS9 321/1409.

4. I. F. = 45MHz, RL = 15S2, f = 9. 375 ± 0. 1GHz, IQ= 1mA. BS9321/1405.

5. Video bandwidth to 2MHz, 30^A bias. BS9322/1411.

6. Video bandwidth 1kHz to 1MHz, 30»iA bias. BS9322/1411.

7. A suitable holder for this diode is a modified version of Sanders type 6521.

Milliard£IAV96A-Page 2


s

s+aa

6-0.25

-as

0.75

psero

-100

BAY96ABAY96BBAY96CBAY96D

-50 50 100Tamb '*0

TYPICAL CHANGE IN OVERALL NOISE FIGUREAS A FUNCTION OF TEMPERATURE

05J71

1 *° ± / -* t£ ~]_

S _J

H J.8 £1 73 T

f_~1

£_

r

f~7

20 kO I (mA)

TYPICAL LOCAL OSCILLATOR POWERAS A FUNCTION OF RECTIFIED CURRENT

MullardBAV96A-Page 3

3 8.0

7.5

7.0

6.5

6.0

05872

11

1I

1

\

\<

I (mA)

TYPICAL OVERALL NOISE FIGURE AS A FUNCTION OFRECTIFIED CURRENT

<? 873

g 400

NI)

cO

| 350

It""

300

250

?nn

2.0 4.0 I (mA)

TYPICAL I. F. IMPEDANCE AS A FUNCTION OFRECTIFIED CURRENT

MilliardBAV96A-Page 4


BAV97

A reversible silicon Schottky barrier diode with excellent sensitivity and very low

1 noise. It conforms to the environmental requirements of BS9 300 where applicable.

J

The metal ceramic case is hermetically sealed.


Sj-g Tangential sensitivity (typ.

)

-54 dBm

- noise (typ.

)

10 dB


M.Q.M.

02.2 -163.max 1.58

0.38.0.25


2.001.80"

1.60

1.52

30*

i\

5.20

A s concentricity tolerance =20.15

J. 63

1.58

0.380.25


JUNE 1977Milliard

BAV97 Page 1


Electrical

Maximum burn out (see note 1)

Temperature

Tstg

range

T«mb

I* ,*e

ELECTRICAL CHARACTERISTICS (T = 25°C)amb '

S tangential sensitivity (see note- 2)

1_ noise (see note 3)

f

Z video impedance (see note 4) - 500

18

0.18 erg

-55 to +150 °C

-55 to +150 °C

Min. Typ. Max.

-52 -54 -58 dBm

- 10 15 dB

NOTES

1. Burn out is defined as the r.f. pulse energy necessary to cause ldB degradation

in noise figure when the diode is subjected to 2 x 10** pulses of 2ns width.

2. Video bandwidth to 2MHz, 50mA bias, f = 9.375GHz. BS9322/1411. (A2dBmimprovement in tangential sensitivity may be obtained by limiting the bandwidth

to 1kHz to 1MHz).

3. Measured at 30/iA bias, f = 1kHz, 50Hz bandwidth. 1^ noise is unchanged with

f

values of bias up to 150/xA.

4. Measured at 50fiA forward bias.

MullardBAV97 Page 2

MICROWAVEDETECTOR DIODE BAY97

on 74

impedance

Zv5

(fl)

10000

7

1000

100

100 1000D.C. forward bias (jiA)

VIDEO IMPEDANCE AS A FUNCTION OF D. C. FORWARD BIAS

MullardBAV97 Page 3

s.

— ffi M3ts

(dBm)

65

eo4 W ••».

t/

J55

fii -i

//

/i

|

50i)f f-i ,2 7!»e 13r

f

45

40

35

J

30 111

f

/?5 / .

20 40 GO 80 100

D.C. forward bias (jiA)

TANGENTIAL SENSITIVITY AS A FUNCTION OF D. C. FORWARD BIAS

MilliardEIAV97 Page 4



A range of silicon Schottky barrier mixer diodes in reversible cartridge outline. -

The diodes are suitable as replacements for the 1N23 and 1N415 series and conform

to the environmental requirements of BS9300 where applicable.


Maximum noise figure at X-band

BAW95D 8.2 dB

BAW95E 7.5 dB

BAW95F 7.0 dB

BAW95G 6.5 dB



Compatible with J . E .D . E . C. DO- 22 with collet

Compatible with J.E.D.E.C. DO-23 without collet

1.2.382.34

r*\4.854.65

Q.75max.

T

—

05.6max

21.4

20.4

5.09

£.95

L_L

*.06.0

max.

,6.35'6.25

^_X

1.4

1.2

-07.527.42

A = concentricity tolerance =±0.2

All dimensions in mm. 04866

Terminal identification : Diode symbol indicates polarity.

JUNE 1977Milliard

BAW9SD-Page 1


Electrical

Maximum peak pulse power (at 9. 375 GHz, 0. 5 its pulse length) 1.0 WMaximum burn out *) 20

0.2 erg

55 to +150 °C

55 to +150 °C

Temperature

Tstg range

Tamb 1*11^ELECTRICAL CHARACTERISTICS (Tamb = 25 °C

Min. Typ. Max.

N Noise figure 2)


v.s.w.r. Voltage standing wave ratio ^)

zif Intermediate frequency impedance v 250

7.8 8.2 dB

7.2 7.5 dB

6.8 7.0 dB

6.3 6.5 dB

- 1.3:1

415 500 a

1)Burn out is defined as the r.f. pulse energy necessary to cause 1 dB degradation in

noise figure when the diode is subjected to 2 x 10& pulses of 2 ns width

2) Measured at 9.375 GHz, 1 mA rectified current, RL = 15 Q. N includes N|f = 1.5 dBwith 45 MHz intermediate frequency. BS9321/1406

3)With respect to JAN -106 holder measured at 9. 375 GHz, 1 mA rectified current,

RL - 15 Q. BS9321/1409

4) Measured at 9. 375 GHz. 1 mA rectified current, RL = 15 8 with 45 MHz intermediate

frequency. BS932 1/1405

MilliardBAW95D-Page2


t.o 2.0 3.0 4.0 5.0

Oscillator power (mW)


5.0

Rectified

D2315

current

(mA)

4.0

3.0

2.0

1.0

n

TYPICAL RECTIFIED CURRENT AS A FUNCTION OF LOCAL OSCILLATOR POWER

ANIdB)

+0.5

-0.5-50 50 100 150

Operating temperature (*C)

TYPICAL CHANGE IN NOISE FIGURE WITH TEMPERATURE

MilliardBAW95D-Page 3

02313

Noise

(dB)

80 —

tf «*n_S ^ ^ • '<» m \** .

\- -___----= -BAW95E

r n _ _ _±_1.0 2.0 3.0 4.0


TYPICAL NOISE FIGURE AS A FUNCTION OF RECTIFIED CURRENT

D23U

l.F.

Impedance

(A)

500

400

300

1.0 2.0 3.0 4.0


TYPICAL DEPENDENCE OF I. F. IMPEDANCE ON RECTIFIED CURRENT

MilliardBAW95D-Page 4

BACKWARD DIODES

D

AEYI7

Sub-miniature germanium bonded backward diode primarily intended for broad- •

band low level detector applications at X-band. It conforms to the environmental

requirements of BS9300 where applicable.



Typ. zero bias tangential

sensitivity in X-band -53 dBm


V 2.S302.51max

'i:es

TT

XX = reference plane All dimensions in mmAA = concentricity tolerance =+ 0.15

-<-

02527a

TERMINAL IDENTIFICATION

The AEY17 is colour coded according to K1007 Issue 3, Section 1. 3. 4. 4.

That is: the positive end (cathode) is marked red and the negative end (anode is

marked blue.

The positive end indicates the electrode which becomes positive in an a. c. rectifier

circuit.

JUNE 1977Milliard

AEY17 Page 1


Temperature

T ^ max.stg

T min.stg

T . max.amb

T min.amb

ELECTRICAL CHARACTERISTICS (T =25°C)

150 °C

-55 °C

150 °C

-55 °c

Min. TyP- Max.

Static

lR Reverse current

V =0.3VK

lF

Forward current

V =0.3VF

Dynamic

Sts

Tangential sensitivity

(see note 1)

M Figure of merit

(see note 2)

ZV

Video impedance(see note 3)

120

100 - nA

12 - mA

-53 - dBm

300 - a

v.s.w.r. Voltage standing wave ratio - - 5:1

(see note 4)

Notes

:

1. Measured at 9.375GHz, zero bias, video bandwidth = 1.0MHz. K1007

Issue 3, Section 8B.4.3.

2. Measured at 9.375GHz, M is taken as the product of current sensitivity

expressed in ftAperfzW, and the square root of video impedance in ohms

.

K1007 Issue 3, Section 8B.4.2.

3. Zero bias, input l.OmV max. (d.c. or a.c. r.m.s.). K1007 Issue 3,

Section 8B.4.8.

4. With respect to50fi, measured at f = 9.375GHz, zero bias and c.w. input

power less than 1.0/xW. The nominal rectifier admittance at a reference

plane X-X taken at the end faces of the ceramic insulator (see outline

drawing on page 1) is

:

(2.0- j 2.0) -i- mho

Milliard —

—

AEY17 Page 2


AEYI7

APPLICATION INFORMATION FOR AEY17

1. Detector performance at other than Test Radio Frequency

Mln. Typ.

S. Tangential sensitity

f=1.0 to 18GHz, B = 1.0MHzts

v.s.w.r. Voltage standing wave ratio

f = 1.0 to 18GHz, Zo = 500

2. Mixer performance (I.F. =45MHz)

N„

*if

Measured overall noise figure

f = 9.375GHz, Nif= 1.5dB

PT ^ =200uW, I = 1.0mAL.O. out

f = 16.5GHz, Nif=1.5dB

PT = 200pW, I = 1.0mAL.O. out

I.F. impedance

I =1.0mAout


f=l to 18GHz, Zo =50C

I =1.0mAout

3. Doppler mixer performance (I.F. = 3kHz)

NQ Measured overall noise figure

f = 9. 375GHz, Nif= 2.0dB

-53

9.0

9.5

130

Max.

dBm

5:1

dB

dB

2.5:1

18 dB

MullardAEY17 Page 3

MICROWAVEDETECTOR DIODES

AEY29AEY29R

Germanium bonded backward diodes primarily intended for low level detector

applications at J -band (Ku band). The AEY29 and AEY29R are packaged in the

standard coaxial outline for this frequency band, similar to 1N78 types. Theencapsulation is hermetically sealed and the devices conform to the environmental




Typ. zero bias tangential sensitivity at J-band -53 dBm

MECHANICAL DATA

DO- 37

Unless otherwise stated , data is applicable to both types

Dimensions in mm

19.4.318.67

0**1*5.49'

-» D740S

A = concentricity tolerance = ± 0. 35

"These limits apply only over 10. 32 dimensions


AEY29 Pin cathode

Body (red) anode

AEY29R Pin anodeBody (green) cathode

OCTOBER 1978Milliard

AEY29-Page 1


Temperature

T . min.stg

T A max.stg

T , min.amb

T , max.amb

-55 °C

+85 °C

-55 °C

+85 °c

ELECTRICAL CHARACTERISTICS (T =25°C)amb

Min.Static

*RReverse current

V =0.3VK

JF

Forward current

V = 0.3VF

Dynamic

hs Tangential sensitivity

( see note 1

)

M Figure of merit

(see note 2)

ZV

Video impedance

( see note 3

)


(see note 4)

50

Typ.

100

12

-53

300

Max.

(LiA

mA

dBm

5:1

Notes

:

1. Measured at 16.5GHz in JAN201 holder, zero bias, 1.0MHz video band-

width. (K1007 Issue 3, Section 8B.4.3.).

2. Measured at 16.5GHz in JAN201 holder, M is taken as the product of

current sensitivity expressed in i*A per iXW, and the square root of

video impedance in ohms. (K1007 Issue 3, Section 8B.4. 2.).

3. Zero bias, input l.OmV max. (d.c. or a.c. r.m.s.). (K1007 Issue 3,

Section 8B.4. 8.).

4. With respect to JAN201 holder, measured at f = 16.5GHz, zero bias

and c. w. input power less than l.O^iW.

Milliard AEY29-Page 2


AEY3IAEY3IA

Sub-miniature germanium bonded backward diodes primarily intended for broad-band low level detector applications at X-band. It conforms to the environmental




Typ. zero bias tangential

sensitivity at X-band

AEY31 -53 dBm

AEY31A -50 dBm



02.2 -1.63.

max 1.58

t M0.38.0.25


2.00' 1.80"

5.20U. Si.

1.60

1.52

30'

J. 63

'l.58

0.380.25

A = concentricity tolerance =10.15


The AEY31 and AEY31Aare colour coded accordingto K1007 Issue 3, Section 1. 3.4.4.That is: the positive end (cathode) is marked red and the negative end (anode) is

marked blue.

The positive end indicates the electrode which becomes positive in an a. c. rectifiercircuit.

JUNE 1977Mullard

AEY31-Page 1


Temperature

T . max.stg

T . min.stg

T . max.amb

T , min.amb

ELECTRICAL CHARACTERISTICS (T = 25°C)v amb

150vc

-55 °C

150 °C

-55 °C

Min.

Static

XR

Reverse current

VR=0.3V

lF

Forward current

V =0.3VF

namic

Sts

Tangential sensitivity

(see note 1)

AEY31AEY31A

M Figure of merit

(see note 2)

AEY31AEY31A

ZV

Video impedance(see note 3)

v.s.w.r. Voltage standing wave

Typ.

100

12

-53

-50

Max.

120

50

300

fiA

mA

dBmdBm

(see note 4) 5:1

Notes

:

1. Measured at 9.375GHz, zero bias, video bandwidth = 1.0MHz. K1007 Issue 3,

Section 8B.4.3.

2. Measured at 9.375GHz, M is taken as the product of current sensitivity expressed

in nA per ^tW, and the square root of video impedance in ohms. K1007 Issue 3,

Section 8B.4.2.

3. Zero bias, input l.OmV max. (d.c. or a.c. r.m.s.). K1007 Issue 3, Section

8B.4.8.

4. With respect to 50B, measured at f = 9.375GHz, zero bias and c.w. input power

less than l.OuW. The nominal rectifier admittance at a reference plane X-X taken

at the end faces of the ceramic insulator (see outline drawing on page 1) is

:

(2.0 J 2.0) — mho

MilliardAEY31-Page 2


AEY3I

AEY3IA

APPLICATION INFORMATION FOR AEY31 AND AEY31A

1 . Detector performance at other than Test Radio Frequency

Min. Typ.

S Tangential spnsitivitv

Max.

ngential sensitivity

f=1.0 to 18GHz, B=1.0MHz

AEY31 - -53 - dBmAEY31A - -50 - dBm

v . s .w . r . Voltage standing wave ratio

i = 1.0 to 18GHz, Z =50flo

2. Mixer performance (I.F. =45MHz)

N Measured overall noise figureo

f=9. 375GHz, N =1.5dBif

PT „ =200mW, I = 1.0mAL.O. out

f = 16.5GHz, N =1.5dBif

PT ^ =200nA, I = 1.0mAL.O. out

z I.F. impedance

I = 1.0mAout

v . s .w . r . Voltage standing wave ratio

f=l to 18GHz, Z =50fio

I =1.0mAout

3. Doppler mixer performance (I.F. =3kHz)

N Measured overall noise figureo

f = 9. 375GHz, N. =2.0dBif

9.0

9.5

130

5:1

dB

dB

2.5:1

18 dB

MilliardAEY31-Page 3


AEY32

Sub-miniature germanium bonded backward diode primarily intended for broadband -

low level detector applications in K-band and in Q-band (Ka-band). It conforms to




Zero bias current sensitivity

in the band 18 to 40 GHz (typ. ) 2.0 fiA/juW


M.Q.M.

02.2 -1.63.

max 1.58

0.38.0.25


2.001.80"

1.601.52'

30*

i\

5.20A. 84

A = concentricity tolerance =±0.15

J.63

1.58

0.380.25

Terminal identification: red end indicates Cathode

JUNE 1977Milliard

AEY32 Page 1

POLARITY IDENTIFICATION

The positive end (cathode) is marked red and the negative end (anode) is markedblue. The positive end indicates the electrode which becomes positive in an a.c.rectifier circuit.


Max. pulsed r. f. input power(f = 9. 375GHz, t

p= 0. 5j*s , p. r. f. = 2000 p. p. s.

)

40 mW

Tamb ran«e

Tstg ran8e

ELECTRICAL CHARACTERISTICS

1/f noise (see note 1)

Swept v. s. w. r. (26. 5 to 40GHz)(see note 2)

Zy video impedance (see note 3)

Sj current sensitivity (see note 4)

M figure of merit (see note 5)

Min.

3.0

55 to +100 °C

55 to +100 °C

[yp. Max.

7.0 dB

5: 1

5.0 kn

.0 MA/^W

50

NOTES

1. Measured at an i.f. of 1kHz with 50Hz bandwidth and zero bias.

2. Measured in a Q-band broadband mount (Mullard specification 7313-731-0091).The v.s.w. r. measurement is swept over the band 26.5 to 40GHz at a powerlevel not exceeding lOOfiW and with zero bias.

3. Measured at an i. f. of 1. 6kHz with an input not exceeding lmV and with zerobias.

4. Measured in the same mount as described in note 2 at frequencies of 27GHz,34GHz and 40GHz , with an input power not exceeding 1/xW and with zero bias.

Rectified current measured by a microammeter of resistance less than 108.

5. Measured at frequencies of 27GHz, 34GHz and 40GHz. M is the product of currentsensitivity expressed in /iA//xWand square root of the video impedance expressedin ohms.

MullardAEY32 Page 2

AEY32

Current

sensitivity

Si

luA/iiW]

4.0

3.0

2.0

1.0

B*'

,«'*

.4*l

' »_ ilk4

•' %\ ,'

«•* u: :__,

r-

1* \

H1 »J tf

<*

f

20 25 30 35

Typical current sensitivity as a function of frequency

40Frequency GHz

til •(

Figure of —

M -

180 - + S~ -=

-- --

a - N *- :1 _ -V _

+*?v i \ --ifio *£ - + - - -i - J160

^r 3 / C 5C — -

—

A J V 4* 4- -* \ 1 f tz

-tf u I 3

HO _t_ JL _ _ ,-*__ _ _ _

J /J ,/

--£ton „ _ _«""_ ____

inn _ _20 25 30 35

Typical figure of merit as a function of frequency

Milliard

40Frequency GHz

AEY32 Page 3

VARACTOR DIODESMultiplier

Special purposeTuning

SILICON PLANAREPITAXIAL VARACTOR DIODE BAY96

Silicon planar epitaxial varactor diode for use as a high efficiency frequency multi-

plier in the v.h. f. and u.h. f. bands. As a tripler from 150 to 450 MHz it has a

typical efficiency of 64% and can handle inputs up to 40 W. The BAY96 has a very

low series resistance and is packaged in a low inductance, hermetically sealed,

welded ceramic -metal envelope, DO -4 with stud cathode. It conforms to the



VR max.

Ptot max -

T- max.

Cr (VR = 6. V, f = 1. MHz)

Rs max. (VR = 6.0 V, f = 400 MHz)

at Vn = 120 V typ.2ttR. Or 'R

120 V

20 W175 °C

28 to 39 pF

1.2 Q

25 GHz

MECHANICAL DATA

Conforming to J. E.D.E.C. DO-4

Dimensions in mm

10-32UNF

t_ I

4,83max

...

1.98.,max

„ 11.5

10.7

Diameter of clearance hole : max. 5. 2 mmAccessories supplied on request:

56295 (PTFE bush, 2 mica washers, plain washer, tag)

56262A (mica washer, insulating ring, plain washer)

Supplied with device : 1 nut , 1 lock washer

Nut dimensions across th*» flats: 9. 5 mm

Torque on nut : min. 0. 9 Nmmax. 1. 7 Nm

MilliardAPRIL 1978 BAY96 Page 1

RATINGS

limiting values of operation according to the absolute maximum system.

Electrical

VR max. 120 V

ptot

max- ^mb = 25

°C> 20 W

Temperature

Tstg min. -65 °c

Tgtg max. 175 °C

Tj max. (operating) 175 °C

THERMAL CHARACTERISTIC

Rthj-mb 7.5 °C/W

ELECTRICAL CHARACTERISTICS

Min. Typ. Max.

Op Total capacitance

VR

= 6.0V, f = 1.0 MHz 28 - 39 pF

Rs Series resistance

Vr = 6.0V, f = 400 MHz - 0.9 1.2 Q

fco Cut-off frequency

VR = 120 V

1 - 25 - GHz2irR

g. Cj,

MullardBAY96 Page 2

SILICON PLANAREPITAXIAL VARACTOR DIODE

BAY96


TYPICAL OPERATING CHARACTERISTICS AS A FREQUENCY TRIPLER

IB5646I

itLi L 3

Wf .} < 1 ji—'WRXJOO^—

o

ii <»-'flow)w l-Mt-^ >— c

sort. 50.n.

!> BAY> 96 I

sfc 100kA <> ^ 1

T2 *&

/7?77Fig1

Frequency tripler circuit - 150 to 450 MHz

L =6.5 turns 18 s.w.g. wire 0.297" I.D. 0.562" long

L =2 turns 14 s.w.g. wire 0.266" I.D. 0.312" long

L =l" x 0. 25" x 0. 020" copper strip 0. 562" from chassis

C «7.0 - lOOpF variable

C , C , C =2. - 13pF variable

C_ =2. - 25pF variable5

tj Efficiency

P. = 25W, f. =150 MHz

Min. Typ.

60 64

Milliard BAY96 Page 3

APPLICATION INFORMATION (cont'd)

n ! 1

1-

1-f-i * I

"+

j

BAY96 j |<

BS048(°/o)

!

I

i Mill M '

Frcaucncv triDter

,

|

150 to 450MMZ IT

^•"*L±**H ^ **^^

^ ^^^^S^

m*•*•

,1

•»

j

!

1! I

1 | i

j i

|

1!

I

J

!

1 jI [

i j j

on !

j I I : 1

10 20 30 40 Pin(W) 50

TYPICAL TRIPLER EFFICIENCY PLOTTED AGAINST INPUT POWERSee circuit on page 3

IB5649I

14-3

" ($/

413

128-6

All dimensions in mm.

COMPONENT LAYOUT OF TRIPLER CIRCUIT

Milliard BA.Y96 Page 4

BAY96

rtot

(W)

25

20

15

10

50

B5654RAY96 _ ", *

5!SS8SS?C _*** $ & ^ v k«h *- m m> ^* *n yMM ««N- W ^«.^

«^ w ^ w ^^ w **hJ^

,m -»4«<r£*«»*.»««M -M»t.-»«l^

^^^^^^^^--^r--"--3 ^

$^lll?$$^#$^^^^^^ rr\! V*-^

;':':' $ $ ^ *| ^ Wf& W-* ::" £ A*: :- : *-:' ":" :

':

-

1

. V :: -^ '^\ '

fa

*** *H^»W*« *£ ^

^^^^^^^^^ii^^Lu^^^^«^-^Lji^^^-i: ...T..i .1..1 1 r--.-.ffv-fft-.lftll 1—I'll

50 100 150 mb CO

TOTAL DISSIPATION PLOTTED AGAINST MOUNTING BASE TEMPERATURE

Milliard BAY96 Page 5

IfIf(CIf

CC

-

-

-

-

- -

-

: O

ii

f

-

- -

- -

- -

- -

- -

- / N NXooH

*»aU)

a:

-

C>*

3n

I

2on

-

(Q

iv

o-

- -

- -

- -

- -

1

.

- -

-

- -

- -

-

-

K *» <*> k in n |n. m r>

§ <r£ "w§

TYPICAL DIODE CAPACITANCE AND SERIES RESISTANCE PLOTTEDAGAINST REVERSE VOLTAGE

Milliard BA.Y96 Page 6

BAY96

c Tn i

i

i n l

r- BAY96 DUDOO(pF) V t MM! t^

"I -1-0MHZ

i

j

-4— i

:

1 —!

100-

i VR = 0-5V_^

j

I I I

-fI--

^+ +- —!

50 j1

~*~. I

-j j

- 11

1- 6-OV-f-H-i 1- ..(.

-I ;

j in Mil

I60Va- !

I

i

!

j

i

r>1

'

1 i 1 zb I MM50 100 150 200 Tj (°C)

R u^

_

:

|

]i

\"~

i

I I|

|

1

| BAY96 '

;

<n) -I i i

j

1

1-51

f» 400MHZT

| 1

!1

t r

rr r j_[

T... - ! ; M I ! 1

{

i-i- I,Vp = 6-OV

- _4_ !

! -T

'

i —l^j

!' i

-f-

10 1L ! ;

"*"

--++-,--

!

l!

i

!

I

j

I- + +-I

,

i ; j

i

I |

I

|

1

|

t

t; l ! ;

'

:f.E1

f

_4-- !

'^ -^-M-.

,

0-5 j1

L!

1'

|

! ;

Ii

I

i

!

\~l!

- J 1 !

I

it I

-

!. T'""

! :i

'

1

4- I

'

1

, ;xrr r~T;

; 1 T'i

! H+4- - 1 ! ;

- i

! ri

'

r> 1 ! 1

~'~| : : !

50 100 150 200 Tj (°C)

TYPICAL DIODE CAPACITANCE AND SERIES RESISTANCE PLOTTEDAGAINST JUNCTION TEMPERATURE

MilliardBAY96 Page 7

SILICON PLANAR EPITAXIALVARACTOR DIODE

BXY27

Silicon planar epitaxial varactor diode exhibiting step recovery characteristics, -

especially suitable for use in frequency multiplier circuits up to ' S* band output

frequency.

It is a diffused silicon device and is mounted in a small double-ended ceramic-metal case with hermetic seal and conforms to the environmental requirements of

BS9300 where applicable.


Operation as a frequency doubler 1 to 2 GHz in a typical circuit.

Pin

10 WPout

5-° WResistive cut-off frequency typ. (VR = 6.0V) 100 GHz

Total capacitance typ. (Vr = 6. V) 4. 5 pF

Tj max. 150 °C


Heatsink/ end

/W1.52

1*2.08p 1.98

1 —

2.21 -j1

2.03 *

*

*\\ •

+ve

k.

^

-ve 0j-|O

*

1.63"*~1.52~*

Taf .

D5769

1

0.61_0.48"*'

«,_2.362.03

(83.10

A: concentricity tolerance = ±0.13


JUNE 1977Milliard

BXY27 Page 1


Electrical

V max.K

P4 4max. R.F..T . =£70°Ctot pin

T > 70°C , derating factorpin

Temperature

T , min.stg

T max.stg

T. max.J


Rx, . . max.th j-pm

ELECTRICAL CHARACTERISTICS (Tamb= 25°C )

(BR)R

I_

Reverse breakdown voltage

Reverse current

V =6.0VR

Cut-off frequency27TT C.

s ]

V =6.0VR

Total capacitance (C . + C )

V =6.0V, f = 1.0MHz

Stray capacitance

Series inductance

Min.

55

55

4.0

50

-55

150

150

20

Max.

50

3.0

Typ.

70

0.001 1.0

100

4.5

0.25

650

V

WmW/degC

°C

°C

°C

degC/W

6.0

MA

GHz

pF

pF

PH

Series resistance

VR=6.0V

Overall efficiency

P =10W, f. =1.0GHzin in

frequency doubler

frequency trebler

50

0.4

60

40


SILICON PLANAR EPITAXIALVARACTOR DIODE BXY27

<—M*1"i r ~i r

Pin

zi»-5on

I

#

*

B9931

—T— Jt—1—JL -

1GHz matching section Varactor mount

poutzout -50-a

2GHz bandpass -filter

APPLICATION INFORMATIONFREQUENCY DOUBLER CIRCUIT (1 to 2GHz)

MullardBXY27 Page 3

75

\(°/o)

70

65

60

55

50

45

40

!

J: 1 i

; ji i

''

'

' y-_-.L_L 1 '

1

I i

- ,'

i

'' i

1

:i

, 4-i ... 1 ! :

|

'

i-

:

'*-- a—

i—i-f-i -i 4m -

rl !

1

!.

4 - ,.---

r4-

, : ^ :

j

!i

I

-4- i --!--

i:

i'

! ; 1 ; :

.;..... 4-K-j-j-j.[T

jj

Tl !

' fjn-1.0GH2„T II,'

-TJ-rf!_[_, -4-4-4---

:ziil.. r ... j. .. 11

-M--f-

+-T-+-

4-4-4-

-f-*-4-

iri

a.r

.7^ *

—i.

!:

i !

-if j

"jj

_J | i

'

i-

1

i

!

1

I ,

j ''

; -- T • -t-

HJ 4 V

- * i-

1 1 l-ii-

r> tzj.;_Ljl-i.- t - - L L.„.I-

Hi -444 - {

. i ) ii 4-4-71 - -b

1

,

T "Tlrf !

;

j

1

t "i" r T"

!!

• ---f-t-T- -

4-+-I-£-

3*|--1

in-

i Aj

;

i

j

_ ]_ Ti/n -4-4

i Pi( _J i

-f-f- rPrl--+-

mTT" rn1

1 4—

I

-Htt..;.!_,.. u , ^ [

-r 4._4 !

1J j j .-i-.i-.t.I i

1-11 1:1

i

"1111 T.L.L1

i

i- •

\ \

'.

l

= \

Til-

:

'> _j

'

'

j

U-~fi.nt"

t:t:— * .; 4

T

: !

:

i ::j:-<-

n1 !

\

i i

r"i4 -

4j/_.

i !

1

-Mill -r

! \: -

44-1-1. !

!:

!"j

! |

i t]_l ~i ;

! -H 1:1-tift !

i

-4-t-~i -M-Mi HI1

Ii

T

1

1 I

! !

'

.

-i'

; W I

]

! -\ ! :

—

r

i

!

:

|

i1 ! _^ |

;

! ;

~\- -I- r-f- 44- -

iL i

t

;

- r | T-r- ~r~

'

j1 -tii-jL .-+. .4 -

T -;

:

! ! ^~~

!i

i

i

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-r— - 44-! j

1i

i j

; j 4.j ;

|

-4-' .|

:j 4 '

j

i !

>

1

!!

1! 1

1

i

-lirj_- _I-;..U-i

j

i

-

.1 4-U-. .-4 4 -

! :'

-

Tt"|T i

i

i \

j= ; 1 Mi i"

'

! : i ' :

i-u Lul l ;

!

I

! ! ji

:

ii i

~Tr

r1

1 ! !

, .;a .. 14, : : i

.1.-1+1:-U-1-1-.

i-!-.4-

~ 4 ~~~t"

|i

1\~T~

4tH"-;4

t

l-t-r-r--

~t'l t~! M-j-4- 4—4-

'tft 1 !

;::i::i-4- !

i~ -4-.l_.L-i--.

i?: 4

:

:.:i!: ii:|i- -M- 7

1

_U j_ _[ _.i_' | :

-j-1-4--fft"r-

-J L 4-t

w 4-t--i-i -

'Ti"X .1 44.4t:: {

-1-4j

-f.ffr. '[.:::. l

8 Pin(W) 10

OVERALL EFFICIENCY PLOTTED AGAINST INPUT POWERFOR DOUBLER OPERATION


BXY28

Silicon planar epitaxial varactor diode exhibiting step recovery characteristics ,

.

especially suitable for use in frequency multiplier circuits up to C-band output

frequency.

It is a diffused silicon device and is mounted in a small double-ended ceramic-

metal case with hermetic seal and conforms to the environmental requirements of



Operation as a frequency doubter 2 to 4 GHz in a typical circuit.

Pin 7-° W

Pout 3' 5 WResistive cut-off frequency typ. (Vr = 6.0 V) 120 GHz

Total capacitance typ. (VR = 6. V) 1.

5

pF

T, max. 150 °C


+ve

5769

A; concentricity tolerance r +0.13

All dimensions in mm -

JUNE 1977Milliard

BXY28 Page 1


Electrical

V max.R

P, 4 max. R.F. ,T . =£70°Ctot pin

T > 70 C , derating factorpxn

Temperature

T ^ min.stg

T x max.stg

T. max.J


n, . . max.th j-pm

ELECTRICAL CHARACTERISTICS (Tamb= 25°c)

(BR)RReverse breakdown voltage

Reverse current

V =6.0V

Cut-off frequency27TT C.

s ]

V =6.0V

Total capacitance (C. + C )

V =6.0V, f=1.0MHzR

Stray capacitance

Series inductance

Series resistance

V =6.0VR

Overall efficiency

P. =7.0W, f. =2.in m

frequency doubler

Min.

45

45 V

2.7 W34 mW/degC

-55 °C

150 °C

150 °C

30

Max.

80

1.0

Typ.

60

0.001 1.0

120

1.5

0.25

650

1.0

2.5

degC/W

HA

GHz

pF

pF

PH

50

Milliard BXY28 Page 2


BXY28

Pin

Zin-5on

#-"i r ~i r

LU

BXY28

#

« ft*

-If*.

routZout -SOil.

r ___jL ,JL,

1

2GHz matching section Varactor mount 4GHz bandpass filter

APPLICATION INFORMATIONFREQUENCY DOUBLER CIRCUIT (2 to 4GHz)

MullardBXY28 Page 3

| | j

"1

|

,

bATiO >°"CO

1

i

"""! 1 1

'

'

1

Doubler operation 2 to 4GHz

f|n-2GHZ

'1

e/o)

-

70

65

- -,-'

60

55

-

50

45

i

8P;„(W)

OVERALL EFFICIENCY PLOTTED AGAINST INPUT POWERFOR DOUBLER OPERATION

Mullard BXY28 Page 4

BXY29

Silicon planar epitaxial varactor diode exhibiting step recovery characteristics,

especially suitable for high order frequency multiplier circuits up to X-band output

frequency.

It is a diffused silicon device and is mounted in a small double-ended ceramic-

metal case with hermetic seal and conforms to the environmental requirements of



Operation as a frequency quadrupler 2. 25 GHz to SI. GHz in a typical circuit :-

Pin ^ W

Pout °-3 W

Resistive cut-off frequency typ. (VR = 6. V) 120 GHz

Total capacitance typ. (VR = 6. V) 1.0 pF

Tj max. 150 <>C


+ve

5769



JUNE 1977Mullard

BXY29 Page 1

25 V

2.0 W

-55 °C

+150 °C

+150 °C


Electrical

V„ max.. nP^ max. R.F. (T . s=70°C)tot

xpin

'

Temperature

T ...min.

stg

T A max.stg

T. max.J


Rthj-pin max. 40 degC/W

ELECTRICAL CHARACTERISTICS W^b** 2500)

Mln. Typ. Max.


a =i. mA) 25 - - VK

I Reverse current

(V =6.0V) - 0.001 1.0 nAR

f Cut-off frequencyC° (V= 6.0V) (see note) 90 120 - GHz

R

Cj Total capacitance (C. + C )

(V =6.0V, f = 1.0MHz) 0.8 1.0 1.5 pFR

C Stray capacitance - 0.25- pF

L Series inductance - 650 - pHs

7j Overall efficiency

P, =1.0W, t =2. 25GHzin in

frequency quadrupler 30 - - %

Note . The cut-off frequency f is defined as

:

f -1

CO 27TT C.S ]

Where, Cj is the junction capacitance and is measured at 1.0MHz

rg is measured on a slotted line at 2. 0GHz.

MullardBXY29 Page 2


BXY29

S-X BAND QUADRUPLES,

Outputtuningcapacitor

(C 3 )

Sliding short circuit

Variable idler capacitor (C2)

Idler circuit

(L 2 )

Inputimpedancetransformer

(LLC,) '

DiodeBXY29

Diode mount

View A-A

Reduced width waveguide

Input

2.25 GHz1 W o Output

9.0 GHz (Waveguide)

Approximate equivalent circuit


B0930

'1

Ouadrupler ODeration 2.25 to 9.0 GHz.<"/o)

f in =2.25 GHzfout=9.0 GHz

45

•

Typical -40

35

30

?50.5 1.0 1.5 P

jn(W)

OVERALL EFFICIENCY PLOTTED AGAINST INPUT POWERFOR QUADRUPLER OPERATION


BXY32

Silicon planar epitaxial varactor diode exhibiting step recovery characteristics, •

especially suitable for high order frequency multiplier circuits up to X-band output

frequency.

It is a diffused silicon device and is mounted in a small double-ended ceramic-metal case with hermetic seal and conforms to the environmental requirements of



Operation as a high order frequency multiplier 1 GHz to 10 GHz in a typical

circuit :-

Pin

500 mWP ,.

out20 mW

Resistive cut -off frequency typ. (VR = 6. V) 150 GHz

Total capacitance typ. (Vr = 6. V) 0.75 pF

T, max. 150 °C


+ve

A: concentricity tolerance z +0.13


JUNE 1977Mullard

BXY32 Page 1


Electrical

V_, max.IV

PA A max. R.F. (T . ^70°C)tot

v pin

Temperature

T A min.stg

T A max.stg

T. max.]

20 V

1.6 W

-55 °C

+150 °C

+150 °C


R^, . . max.th j-pin

ELECTRICAL CHARACTERISTICS (Tamb= 25°c)

(BR)RReverse breakdown voltage

(I

R= 1.0mA)

Reverse current

(VR=6.0V)

Cut-off frequency

(V =6.0V) (see note)R

Total capacitance (C. + C )

(V =6.0V, f=1.0MHz)

cs

Stray capacitance

Ls

Series inductance

tt

Transition time

T Life time

Min.

20

100

Typ.

50

Max.

0.5

0.001 1.0

150

0.75

0.25

650

1.0

150

degC/W

HA

GHz

PF

pF

PH

ps

50

Note . The cut-off frequency f is defined as

:

CO

f =

—

i

CO 27TT C.s ]

Where, C* is the junction capacitance and is measured at I.OMH2

r„ is measured on a slotted line at 8.0GHz

MULTIPLIER PERFORMANCE

outf = 1.0GHz, P. =500mW,in in

f =10GHzout

Min.

15

Typ.

20

Max.

mW

MullardBXY32 Page 2


BXY32

140

Pout

(mW)

120

100

80

60

40

20

I I I I

fjn = 1.63GHz

Pf-= 1.0W

f:_x«S

'In~«

in*>

f in x8 -

I I

10 12 fout

(GHz) 14

TYPICAL PERFORMANCE IN HIGH ORDERMULTIPLIERS

MullardBXY32 Page 3

li

! i 1' j__L4. 1

'

i

!

n -44-

4+-

'

:\

4±I4| i ;

-ftTT III!! ill 1

_„*£ - Multiplier' 4 1 A *"* /-I 1.

35operation 1 to 10 uriz

"t"!

'n...:..!_..

-r-4i4

1 Mi! "^Tl

Pout ut 10 ^HV i^^^L J4

. i_.._j

(mW) ii

;j 4

i!

1 M i 1 \.t .. .,_. L_,_,__l_ -L^----> 1

i

• T

rt44 -

V- * - - -t -H^-- - .^4-I

-+- -\2|

*~

i 1

|

;j 1

iT

30^

:!

i !—

i

1

: ;'

.14-:

i

..[._T;..l

! !

11 W

-fJ— -r-

!

!

ii

'

,.. j... j. ....... ..j.44- ~~xi

I

..

r

14_J_l._..^ __! l_ L~-._ _I !"!

;/ M, L . _. i- .._ . - h- --

r 1 J !

i i

1i

4+H 4- ..... ..j# i i j

25.!444-itti

! ^_ j/i

~"S- —

"i-

—1 j

-4 "3-•

_ .._|_.

jt_+. ..i ....

201

__J_ __. _. . - .„_ _H _t JLIJ- . - -— 1

!

i

j

i

I

!

15

1

! .

! !;

_| L..1,...

10 1

t ! , 1~

_j , i

|_ ji

1

1 i.

l „.. _4_ . ^4 -_ _

1

! 1

51

i

, [i

t I |

i

Mf

i

f~ ,

1

"j H~1

i

!

!

i

!

in 1'

+|

250 500 750 1000 Pin

( mW )

TYPICAL PERFORMANCE AS A FREQUENCYMULTIPLIER


yv

BXY35to

BXY41

SILICON VARACTOR DIODES

Silicon planar varactor diodes .exhibiting step recovery characteristics, especially suitable for use in

frequency multipliers. They conform to the environmental requirements of BS9300 where applicable.

B-XY35

Reverse breakdown

voltage

lR =10*iA

V(BR)R

Cut-off frequency

VR = 6V'co

Diode capacitance

VR -6VC

i

Transition time *tr

Storage time ts

Thermal resistance

junction to mounting

base, types A.D.E

Rth j-mb

Thermal resistance

junction to pin,

types B and C

Rth j-pin

MunfptiBr pelfofusance

Typical output

frequency range

Outlines available

mm.max.

max.

typ.

mm.max.

100

25

6.0

12

10

10

0.75

2

BXY36

70

75

4.0

6.0

500

150

20

20

BXY37

70

100

2.0

4.0

350

100

20

20

BXY38

50

120

1.2

2.0

300

75

30

30

BXY39

40

150

0.8

1.2

200

50

40

40

BXY40

25

180

0.4

0.9

150

50

50

50

8

10

BXY41

25

200 GHz

0.25

0.5

100

25

pF

PF

50 °C/W

50 °C/W

10 GHz14 GHz

B

CDE



Zl MilliardApril 1978

BXY35to

BXY41 yvMECHANICAL DATA

Outline ADO-4

Dimensions in mm

10-32UNF

* I

4>,83

max

max

. 11.5

10,7" -

Diameter of clearance hole: 5.2 mmAccessories supplied on request:

56295 (PTFE bush, 2 mica washers, plain washer, tag)

56262A (mica washer, insulating ring, plain washer)

Supplied with device: 1 nut, 1 lock washer

Nut dimensions across the flats: 9.5 mm

Torque on nut: min. 0.9 Nmmax. 1.7 Nm

Outline B Outline C

Heotsinkend

Cathode 05.97 Anode

05772


1,Ii

1

'

llt

R0.76min ^

t

9 2 31

I

399

V04.85max

2.39-

min

3.75max

7.25 __,.).02

11.8210-85 03242

April 1978

Mullard V

Silicon varactor diodes

Outline D

^V.Outline E

BXY35to

BXY41

t 3 - 12* 2.98

02.1max

A-

3-48 UNCthread

D7839

V 1.53

03243

0.66 40.36

T,1

801.50

1.621.53

0.2 5 max. _x45»chamfer A = concentricity tolerance =±0.13

U MullardApril 1978

SILICON VARACTORTUNING DIODES

BXY53BXY54BXY55

Epitaxial silicon varactor tuning diodes supplied in a standard microwave package. -<—

They conform to the environmental requirements of BS9300 where applicable.


Vr max.BXY53

60

BXY54 BXY55V

Op at -4V typ. 1.0 4.7 15 pF

Cto7m— mm. 4.0 6.5 7.0 pF

Unless otherwise shown , data is applicable to all types


Conforms to B. S. 3934 SO-86

A: concentricity tolerance z +0.13


Normal operation with reverse bias, i.e. heatsink end positive.

MilliardJUNE 1977 BXY53-Page 1


VR

max. (see note 1 60 V

T=^ ran8estg

-55 to +175 °C

T max.case

125 °C

:TRICAL CHARACTERISTICS (at T = 25°C)amb '

BXY53 BXY54 BXY55

V(BR)R

(10^ min«> 60 60 60 V

I at 55V max.K

1.0 1.0 1.0 MA

C at -4V min. 0.8 3.7 12 PF

(see note 2) typ. 1.0 4.7 15 PF

max. 1.2 5.7 18 PF

Total capacitance ratio

CTOmin.

T60V4.0 6.5 7.0

Insertion loss (zero bias)

(see notes 3,4 and 5) max. 0.8 0.5 0.25 dB

Phase swing min. 80 85 63 degrees

(0 to 60V)

(see notes72 74 57 degrees

3, 4 and 5)

NOTES

1. At 25 C; below 25 C this figure must be derated at 7 x 10~ V/°C. Diodes with

different values of V. D are available on request.(BR)R

2. Capacitance tolerances of ±10% and lower are available on request.

3. Measurements made with the diode at the end of a 50J2 transmission line and with

small signal conditions.

4. Measured at 2.0GHz for BXY53 and BXY54; at 1.0GHz for BXY55. For values at

other frequencies see graphs on page 4.

5. The heatsink pin should be located in a hole of 1. 6 to 1. 65mm dia. The location

of the other end should be a hole of 1. 8 to 2. 2mm dia. , bearing on flange B witha force not exceeding 10 N.

APPLICATION NOTE

When designing tuning circuits at high frequencies it is not sufficient to specify acapacitance swing and loss resistance in the tuning varactor. The parasitic reac-tances of the microwave package have a significant effect on the terminal impedanceof the device. Although strictly speaking one must consider the entire circuit whenquoting impedance values the method of measurement adopted here has been foundto give values of useful accuracy in a variety of coaxial and waveguide test mounts.

MullardBXY53 - Page 2

SILICON VARACTOR BXY53TUNING DIODES BXY54

BXY55

APPLICATION NOTE (contd.)

One may 'simply take the measurements as giving values of r. f. impedance as a

function of bias for small signal conditions or they can be used as a more funda-

mental design aid. This is because the significant factors for the design of a micro-

wave varactor tuned circuit are the available phase swing in the circuit and the loss

incurred by the varactor. Both these quantities can be increased or decreased by

lowering or raising respectively the characteristic impedance of the circuit. Both

these quantities are also invariant under transformation down a uniform loss less

transmission line and apply whatever impedance is required to be presented by the

varactor circuit.

At large signal levels the r.f. swing may drive the varactor into forward conduc-

tion for part of the cycle. This has two effects, firstly there is a rectified voltage

built up on the varactor terminal and secondly the effective insertion loss rides at

low bias voltages. These effects are fundamental to any varactor diode.

Under forward d. c. bias conditions, the maximum bias current must not exceed

100mA or permanent damage may occur.

Mullard ^.^

DS891

Degrees

125

100 N *• ^ - . ,•* >vK \ / >

/^ v \ / \ B)/ \ \ / iLJ

Af s V r \

75 / * > L

/ s p\ \

/ ^k / \f \/ \ 1

/ / x ^

v50 / /\ \/ J' \ \/ r \ s,/ A

'v^ \/ > ' v \

25 -4' >

L \ BXYbA

s/* X s

_s>s s^ •s

fs^-^* s

n0.1

0.1

5 71.0

2 5 710

TYPICAL PHASE SWING AS A FUNCTIONOF FREQUENCY

Frequency(GHz)

35892

Insertion

loss

(dB)

>S^

0.5

-5*SNN

o^

*\^ v V BXVS5s

1.0

1.5

V BXY53>n

5 ' 1.0 2 5 7 10 2 Frequency (GHz)

TYPICAL INSERTION LOSS AS AFUNCTION OF FREQUENCY

MilliardBXY53 - Page 4

SILICONVARACTOR DIODES

BXY56BXY57

High efficiency silicon varactor diodes suitable for operation in low and high order -

multiplier circuits with output frequencies in the range 3 to 8 GHz. These diodes

are of the diffused epitaxial type, having mesa construction for optimum perform-

ance and conform to the environmental requirements of BS9300 where applicable.


VBR(R) min' (JR= 10 **A min -

)

60 V

BXY56 BXY57

Cj (VR = 6 V) min. 1.5 2.5 pF

max. 2.5 3.5 pF

fc (VR = 6 V min.

)

160 140 GHz

Unless otherwise shown , data is applicable to both types



Heatsinkend

«1.60w1.52

A: concentricity tolerance - +0.13


Normal operation with reverse bias , i. e. heatsink end positive.

JUNE 1977Milliard

BXY56-Page 1

VD max.R

P max. (T, max. 50 C) (see note 1)tot

vhs

Rth

(J~hs > max -

T rangestg

T. max.J

CHARACTERISTICS (T . = 25°C)pin

BXY56 BXY57

60 60 V

5.2 6.6 W24 19 °C/W

-55 to +175 -55 to +175 °C

+175 +175 °C

V(BR)R

min ' (IR

= 10MA)

C . (V = 6V , f = 1MHz)(see note 2)

60 60

nun.

max.

fco"^ (VR -6V)

(see note 3)

tttyp. (transition time)

t typ. (lifetime)

Cs

typ.

Ls

typ.

MULTIPLIER PERFORMANCE (see note 4)

Low order multiplier efficiency in a

2. 1 to 4. 2GHz doubler

High order multiplier efficiency in a

0. 45 to 3. 6GHz 8 x multiplier

1.5 2.5 PF2.5 3.5 PF

160 140 GHz

150 200 ps

60 150 ns

0.25 0.25 PF

650 650 PH

60

20

NOTES

1. P P. -Ptot in out.

Derating curves are used for value of T. greater than 50 C:

Pto<

(W)

5.2

BXY56

permissiblearea pf operation'

50 175 T hs (°C)

Fig. 1

tot

(W)

6.6

BXY57

permissible

area of operation

'

50 175 T hs (°C)

Fig. 2

silicon BXY56VARACTOR DIODES BXY57

NOTES (contd.

)

2. A particular diode specification within this range may be selected to suit the

application. Furthermore, it is recommended that devices are functionally tested

by the supplier in the customer* s circuit.

3. Cut-off frequency is measured using a slotted line system at 2GHz. f( 2*R

sCj

4. For high power applications it is essential that the heatsink end of the devices

is gripped by a collet or equivalent clamping system to ensure the best possible

thermal conductivity, this in turn should be coupled to an adequate heatsink.

Care must be taken to avoid unnecessary deformation of this diode pin, as this

may cause cracking of the metal -ceramic hermetic seal.

The location of the top cap should be a hole of diameter 1.8 to 2.2mm. bearing

on flange B with a force not exceeding ION.


GALLIUM ARSENIDEVARACTOR DIODE

CAYIO

Gallium arsenide varactor diode with a high cut-off frequency for use in parametric

amplifiers , frequency multipliers and switches. The diodes are of the diffused

mesa type, are mounted in a small ceramic -metal case with a welded hermetic seal

and conform to the environmental requirements of BS9300 where applicable.


Vr max. 6.

IF (AV)max- 70

Ptot

max-Tstud

uP tol07 °C 50

for higher temperatures see derating curve

Operating temperature range -196 to +150

fc

typ. (VR = 6.0V) 240

V

mA

mW

°C

GHz


Conforms to B.S. 3934 SO86

A 2.36* 2.03

a

1 l

02.

I t08 01.6098 1.52

1 1

r

^

-y

4

01.1.

1

50 03.52 3.

101. DO

}

1

1.63 _

1

f

0.61

0.48

2.21

1.5?"

2.03

A : concentricity tolerance = +0 13


MARCH 1978Milliard

CAY10 Page 1

Limiting values of operation according to the absolute maximum system.

Electrical

V_, max.R

6.0 V

70 mAI max.F(AV)

P, max. (T , ^lO?^) 50 mWtot stud

Temperature

T min. ~196 cstg o

T _.max. +150 c

stg oT. (operating range) -196 to +150 C

ELECTRICAL CHARACTERISTICS (Tamb

= 25 C)

Min. Typ. Max.

Static

I Reverse currentR V =6 0V " °' 1 1 «° ^

R '

V Forward voltage dropF

I =1.0fzA (seenote3.) - 0.9 - VF

Dynamic

f Series resonant frequency°

Zero bias (see notes 1,2.) 8.9 10 11.6 GHz

f Cut-off frequencyCO

Zero bias 'see note 2.) 125 150 - GHz

f Cut-off frequencyC V =6.0V (see note 2.) 240 - GHz

C Effective diode capacitance

at X band frequency

Zero bias (see notes 1,2.) *0.3 0.4 0.5 pF

y Capacitance variation coefficient

Q (see note 3.) 0.12 0.15 -

C Stray capacitance (see note 1.) - 0.10 - pFSI

Cco Stray capacitance (see note 1.) - 0.15 - pF

L Series inductance (see note 1.) - 625 - pHs

Mullard CAY10 Page 2

GALLIUM ARSENIDEVARACTOR DIODE CAYIO

Notes

1 . A suitable lumped circuit equivalent for the device may be drawn as

follows

:

i

\

CS1 Cs2i

r

Cm=Ci+C,Rs ^m=*-j +^S2

fB57T71

2. Measurements at and about the series resonant frequency, in a suitable

waveguide holder, enable the values of fQ and the diode Q factor to bedetermined . The effective diode capacitance andthe cut -off frequency can

be calculated taking Lsto be the typical value.

f =Q £ where f is the series resonant frequencyco o00

and Q is the Q factor at zero biaso

andmo A 2* 2 T4jt f L

o s

3 . The capacitance variation coefficient 6 is defined as

I-C max. -C min.m m2(C max. + C min.)m m

where C min. = effective capacitance at V_ = 1.0Vm RC max. = effective capacitance at I_ = l.OjuAm F

Mullard CAYIO Rage 3

This can be re -written in the form

I = jl-V)"i-g'i

2{(l-V)^+ 2^}+ ^2]o

where V = V„ at l.OuAF

C. =C -o,„]o mo S2

Mullard CAYIO Page 4

CAYIO

D

o>-

<u

o«ji_

o Cv

'm p

F atow »-Q. O

2l0^ E

TOTAL DISSIPATION PLOTTED AGAINST STUD TEMPERATURE

Milliard -CAYIO Page 5

CXY10

GALLIUM ARSENIDE VARACTOR DIODE

Gallium arsenide varactor diode with a high cut-off frequency suitable for use in parametric amplifiers

and may be used in frequency multipliers and switches. The diodes are of the diffused mesa type,

mounted in a small ceramic-metal case with a hermetic welded seal and conform to the environmental



Vr max.

Ptot max.Tpin <25°C

Typical X-band parametric amplifier performance

Signal frequency

Gain

Bandwidth (3dB)

Noise temperature

6.0 V

50 mW

8.5 GHz

15 dB

70 MHz

200 °K

Dimensions in mmMECHANICAL DATA

Anode

Pressure to be Avoidavoided f lexing ofin this area Preferred area flange

of pressure

Compression force onmounting surfaces X-X & Y-Ymust not exceed 2.65N

U MilliardApril 1978

CXY10

RATINGS


Voltage

Continuous reverse voltage

Power dissipation

Total power dissipation (Tpjn < 25 °C)

Temperatures

Storage temperature

Junction temperature (operating range)

THERMAL RESISTANCE

From junction to pin

CHARACTERISTICS

Reverse current

VR = 6.0 V

Series resonant frequency

Vr = (note 1

)

Cut-off frequency

Vr = (note 1

)

Product of capacitance variation

coefficient and cut-off frequency

at Vr = V (note 2)

Microwave value of effective

device series resistance

(notes 1,4)


device capacitance Vr = V(notes 3, 4)

Stray capacitance

(L.F. measurement)


device series inductance

(note 3)

VR

Ptot

Tstg

6.0 V

50 mW

-196 to +175 OC

-196 to + 135 °C

Rth j-pin max. 0.9 0C/mW

TamD = 25 °C unless otherwise stated

Min. Typ. Max.

0.1 1.0"R

fr 27

7fco 35

30

200 350

50

2.25

0.2

0.3

140

AiA

34 GHz

GHz

GHz

ft

pF

- . pF

pH

April 1978

Milliard r?

Gallium arsenide varactor diode

Notes

1. Measured in a reduced height waveguide holder at Q-band.

2. yfc is guaranteed by a functional X-band paramp test at room temperature.

The capacitance variation coefficient, 7, is defined as follows:

7 V.

CXY10

Cm (max) - Cm (min)7=

2[Cm (max) + Cm (min)]

where Cm (min) = capacitance at Vr = 1.0 V

Cm (max)= capacitance at \f= 1.0 /iA

3. Cm is calculated using the frequency cut-off and the series resistance:

27rRmfco

Ls is also calculated using fres and Cn,:

1

Ls =

res um

4. (a) Diode circuit model.

(b) Equivalent circuit in measuring holder.

Not seen in

measuringholder

rzj—i

1

1

Lbd

±c's ±c

J^C r

08208 (a)

V MilliardApril 1978

CXY10

Operating note

The CXY10 varactor diode will give good noise performance in a parametric amplifier of suitable

design.

For example:

The effective input noise temperature of the amplifier, less the contribution due to the circulator,

would be typically 200 °K and a maximum of 250 °K, with the amplifier at room temperature

under the following conditions:

gain 15 dB

bandwidth 50 MHz (3 dB)

signal frequency in X-band

overcoupled ratio 4 to 5 dB

pump frequency in Q-band

In cooled parametric amplifiers, the device would give appropriately lower effective input noise

temperatures due to its low temperature working capability.

Devices and alternative encapsulations

may be selected to suit customers'

specific requirements

April 1978

Milliard C?

GALLIUM ARSENIDEVARACTOR DIODE CXYI2

Gallium arsenide varactor diode suitable for use in frequency multiplier circuits •

up to Q-band output frequency. The diodes are of the diffused mesa type, are

mounted in a small ceramic -metal case with hermetic welded seal and conform to



Operation as a frequency quadrupler 9 . GHz to 36 GHz in a typical circuit: -

Pin

max. 500 mWPout

mln ' 50 mWResistive cut-off frequency typ. (V^ = 6.0 V) 500 GHz

Tj max. 175 °C


Anode

Pressure to be Avoidavoided flexing ofin this area Preferred area flange

of pressure

Dimensions in mm

Compression force onmounting surfaces X-X & Y-Ymust not exceed 2.45N

MARCH 1978Milliard

CXY12 Page 1


Electrical

V max.RP max. (T . =25°C) (see note 1)tot

x pin

P. R.F. max.in

Temperature

T A min.stg

T x max.stg

T. max.J

10

300

500

-55

+175

+175

V

mWmW

°C

°C

°C


RiU .. . . max.th(j-pin)

ELECTRICAL CHARACTERISTICS (Tamb= 25°c )

(BR)RBreakdown voltage

I_, = 100nAK

Min.

10

Reverse current

V =6.0VXV

Series resonance frequency

V = 6 . 0V (see note 2) 27

Cut-off frequency

V = 6 . 0V (see note 2) 300R


device capacitance V = 6 . 0V

(see note 3)

0.5 degC/mW

Typ. Max.

15 - V

0.001 1.0 nA

29 35 GHz

500

0.25

GHz

pF


device series resistance

V =6.0V (see notes 2 and 4)R

Stray case capacitance

(L.F. measurement)

Microwave value of effective device

series inductance (see note 3)

1.3

0.3

120

PF

PH


GALLIUM ARSENIDE CXYI2VARACTOR DIODE

Notes

1. The maximum value of Ptot is based on a d.c. dissipation life test. The R.F.power may well exceed this figure in a practical circuit

.

2. Measurements on semiconductor devices at microwave frequencies are veryniuch

dependent upon the kind of holder used. The dynamic parameters are quoted using

a holder which takes the form of a double four section Q-band (Ka-band) 26 to

40GHz waveguide wide band low v.s.w.r. transformer to a reduced height of

0.25mm. The transformer is step down followed by step up in order to use standard

Q-band components on either side . A d . c . isolated coaxial choke system allows

the diode to be inserted across the 0.25mm reduced height section and to be

biased.

Using a swept frequency transmission loss measurement system, the series

resonant frequency and the Q of the diode holder system can be measured . Hencethe resistive cut-off frequency which is defined as Q x freg .

Separately, by measuring the transmission loss past the diode at resonance, the

effective diode series resistance can be found

.

3 . C is calculated using the frequency cut-off and the series resistancem

C =—±—m 2rfR fm co

L is also calculated using f and Cs res m

47r2f2

Cres m


4. (a) Diode circuit model.

(b) Equivalent circuit in measuring holder.

Not seenin measuringholder

a.

'Cm

(a)

6( b)

Application note

In a suitable frequency quadrupler , this device is capable of producing50mW at 36GHz for an input power of 400mW at 9.0GHz.



CXYI2

pout

(mW)

fjn= 9.0GHz

fout 36 QHZ80

A

A*

f_

2~2

a'

f

~i

,f~

~i_

A

£~i_

jf~40 y

~1

T/

a'

A~2

f£_

~2

f

/jjf

~1

j*~

f1/T 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1

200 400 600 Pjn(mW)

OUTPUT POWER AGAINST INPUT POWERQUADRUPLER OPERATION


GALLIUM ARSENIDELIMITER DIODES

CXY22ACXY22B

Gallium arsenide varactor diodes for limiter applications from C to X-band. Very lowinsertion loss and high isolation characteristics may be obtained. The diodes are of thediffused mesa type and are mounted in standard microwave packages. They conform tothe environmental requirements of BS9300 where applicable.



GratOV (typ.)

Insertion loss* (typ.

)

High power attenuation* tfyp.)

*Depends on circuit configuration, see page 2

CXY22A

2.0 to 7.0

0.85

0.2

20

CXY22B

7.0 to 12

0.55

0.3

16

GHz

pF

dB

dB

Unless otherwise shown, data is applicable to both types.



Heatsinkend

Dimensions in mm

05772

A= concentricity tolerance = ±0.13

MARCH 1978Milliard

CXY22A-Page 1


rstg

range

max. 6.0 V

-55 to +150 °C

-55 to +100 °C

CXY22A CXY22B

max. 1.0 1.0 HA

typ. 0.85 0.55 pF

max. 1.45 1.45 V

typ. 1.0 1.2 £2

Tamb^S6

CHARACTERISTICS

IR atVR = 6 V

Op at VR = V, f = 1 MHz

Vp at IF = 50 mA

Rgat VR = V

TYPICAL X-BAND LIMITER USING CXY22B

This is a resonant circuit in rectangular waveguide, operating by reflection of a highpower input.

Centre frequency

Bandwidth (v. s. w.r. = 1. 2 : 1) at 1 mW max.

Insertion loss at 1 mW max.

Insertion loss at 100 mW (c. w.

)

Insertion loss at 5 W (pk), p.r.f. 1 kHz, 1 jzs

Safe peak power handling* , p.r.f. 1 kHz, 1 us

*Peak power handling depends on pulse length and duty cycle, as well as circuit design.

*o 9.4 GHz

**o 300 MHz

0.3 dB

6.0 dB

16 dB

50 W

/Section through

WG16

/Limiter diode

Circularcoupling post

Circular tuningcavity

D784S

A particular diode specification within this range should be selected to suit

a particular customer* s requirement. It is recommended that the diode is

functionally tested by the supplier, in the customer* s circuit.

Requests for devices in alternative packages will be considered by the supplier.

MullardCXY22A Page 2

GALLIUM ARSENIDEVARACTOR DIODES

CXY23ACXY23BCXY23CCXY23D

Gallium arsenide Schottky barrier diodes having a low series resistance and a wide

capacitance range. This ensures low losses with a wide tuning range in microwaveapplications. They conform to the environmental requirements of BS 9300 whereapplicable.


V(BR) R <min - > 12 V

VR (max.

)

12 V

Cj (at VR = 0V) (typ.

)

CXY23A 1.0 pFCXY23B '1.5 pFCXY23C 2.0 pFCXY23D 3.0 pF

(Development Nos. 821CXY/A, B, C and D)

Unless otherwise stated , data is applicable to all types.


Conforms to BS 3934 SO-86

+ve -ve fl1 -60

5759

A= concentricity tolerance r +0.13


MARCH 1978Milliard

CXY23A-Page 1


VR (max.)*

TEMPERATURE

range

ELECTRICAL CHARACTERISTICS (at Tamb = 25 °Q

V(BR)R

Cj (VR = OV) CXY23A

CXY23B

CXY23C

CXY23D

Min.

12

65 to +150

Typ. Max.

°C

12 - - V

0.8 1.0 1.2 pF

1.2 1.5 1.8 pF

1.6 2.0 2.5 pF

2.5 3.0 3.5 pF

Capacitance ratio

Cj (VR = 0V)

Cj (VR = 12V)3.0: 1

R Q (VR = 0V) CXY23A

CXY23B

CXY23C

CXY23D

Pacakage capacitance

VR

0.2

3.0 a

2.0 Q

1.5 Q

1.0 J2

- pF

2 V

"Versions of these diodes with VR (max. ) up to 30V may be made available to special

order.

These devices may be supplied in alternative

packages to suit customers' specific requirements

MilliardCXY23A-Page 2

SILICON PLANAR EPITAXIALVARACTOR DIODES

IN5I52

IN5I53

Silicon planar epitaxial varactor diodes exhibiting step recovery characteristics

,

especially suitable for use in frequency multiplier circuits up to S-band output

frequency. They conform to the environmental requirements of BS9300 where

applicable.


Operation as a frequency doubler 1.0 to 2.0 GHz in a typical circuit.

P. 12in

W

P 6.0rout

W

Typical resistive cut-off frequency (Vr = 6.0 V) 100 GHz

Typical total capacitance (VR = 6. V) 6. pF



OUTLINE DRAWING OF 1N5152

Heat sink

Cathode.+V(2

/end

^152 163152

1.9F-*

3.1_

3.0

l*±1.52

Anode'

2.362.03

0.61

0.48

"T2.21

2.03

-VC

OUTLINE DRAWING OF 1N5153

Anode

>

^7^

05.97

..k *~S ^Heat sinkCathode^ end

As concentricity tolerance « ±"0.13

All dimensions in mm D7840

JUNE 1977Mullard

1N5 152-Page 1

Electrical

V_, max.XV

P. . max. R.F.. (T . <70°C)tot pin — '

Temperature

T . min.stg

T . max.stg

T. max.J


R., .. . vmax.

th(j-pin)

ELECTRICAL CHARACTERISTICS (T = 25°C)* amb '

BR(R)

R

V_


(IR= 10M)

Reverse current

(VR= 60V)

Forward voltage

aF= 10mA)

Cut-off frequency

(V =6.0V, f = 2.0GHz)R measured

Total capacitance

(V =6.0V, f = 1.0MHz)XV

Overall efficiency

P. =12W, f. =1.0GHzin in

frequency doubler

Min.

75

55

5.0

50

75 V

5.0 W

-55 °C

+175 °C

+175 °C

20 degC/W

Typ. Max.

0.001 1.0 nA

1.0

100 GHz

7.5 pF

60

Milliard1N5152-Page 2


IN5I55

Silicon planar epitaxial varactor diode exhibiting step recovery characteristics ,

.

especially suitable for use in frequency multiplier circuits up to C-band output

frequency. It conforms to the environmental requirements of BS9300 where applic-

able.


Operating as a frequency tripler 2. to 6. GHz in a typical circuit.

Pin 5'° W

Pout2'° W

Typical resistive cut-off frequency (VR = 6. V) 120 GHz

Typical total capacitance (VR = 6. V) 2. pF


Heotsinkend

+ve



JUNE 1977Milliard

1N5155 Page 1

Electrical

V_ max.R

tot

Temperature

T . min.stg

T . max.stg

T. max.J

max. R.F. (T . <70°C)pm — '


R., ,. . . max.th(j-pin)

ELECTRICAL CHARACTERISTICS (T = 25°C)* amb

BR(R)

R

VF

fCO

Min.

35


(Ir=10mA)

Reverse current

(VR= 26V)

Forward voltage

(IF= 10mA)

Cut-off frequency

(V =6.0V, f = 2.0GHz) 100R measured

Total capacitance

35

3.0

-55

+175

+175

120

V

W

35 degC/W

Typ. Max.

0.001 1.0 nA

1.0

(V =6.0V, f=1.0MHz)

Overall efficiency

P. =5.0W, f. =2.in in

frequency tripler

1.0

GHz

3.0 pF

40

Milliard1N5155 Page 2


IN5I57

Silicon planar epitaxial varactor diode exhibiting step recovery characteristics,

especially suitable for use in frequency multiplier circuits up to X-band output fre-

quency. It conforms to the environmental requirements of BS9300 where applicable.


Operation as a frequency doutder 5. to 10 GHz in a typical circuit.

Pin

2' 6 W

Pout 1-0 WTypical resistive cut-off frequency (VR = 6. V) 200 GHz

Typical total capacitance (VR = 6. V) 0.

8

pF


+ve * W K52

A= concentricity tolerance = ±0.13


0«7O

JUNE 1977MuHard

1N5157 Page 1

Electrical

VR max. 20 vPtot

max. R.F. (Tp

.

n<70°C) 2.5 W

Temperature

Tstg

min. _55oc

Tstg

max- +175 °C

T. max. +175 °c


Rth(j-pin)

maX - 38 - 5 degC/W

ELECTRICAL CHARACTERISTICS (T = 25°C)amb '

Mln. Typ. Max.

VTjr>/r»v Reverse breakdown voltageBR(R)

aR= 10MA) 20 - - v

IR Reverse current

(VR =16V)

- - o.l nA

V Forward voltage

(IF= 10mA) - - 1.0 V

f Cut-off frequency

(V 8 - 07'

fmeasured

=8 ' 0GHz) 18° 200 " GHz

C _ Total capacitance

(VR= 6.0V, f = 1.0MHz) 0.6 - 1.0 pF

Overall efficiency

P. =2.6W, f. =5.0GHzin m

frequency doubler 38

Milliard1N5157 Page 2

GUNN OSCILLATORS

X-BAND GUNNOSCILLATOR

CL83I0


Solid state oscillator featuring wide electronic

in local oscillators employing A. F.C. systems

tuning range. For application

Output connector WG . 16/WR.90

Centre frequency 9.4 GHz

Mechanical tuning range (min.

)

±50 MHz

Electronic tuning range (min.

)

200 MHz

Power output (typ.

)

5.0 mW

Operating voltage -7.0 V

Supplyvoltage

-7VO

—

Electronic tuning

BZY88 . _ J_ r|" ~ = -

-1

8V2 p"~l

10nF lJF___^j

Tuning

voltage

0A91

=i= 10nF

Gunn device

25max

Varactor diode

W.G. Plain flange

5985-99-083-0052

Mechanicaltuning

T

585DOD T

±5 f

31.5 ~J

i

1f

,6

_LL.2JAll dimensions in mm

JULY 1978Milliard

CL8310Page 1

OPERATING CONDITIONS

Supply voltage (see note) -7.0 V

Supply current 140 mA

Tuning voltage to -10 V

Tuning current 1.0 mA

out5.0 mW

RATINGS (ABSOLUTE MAXIMUM SYSTEM) at 25°C

Supply voltage max

.

-8.0 V

Supply current max. running 200 mA

starting 250 mA

Tuning voltage max

.

-12 V

Tuning current max

.

2.0 mA

Load v.s.w.r. max. 1.5:1

CHARACTERISTICS at 25 C

Centre frequency

Mechanical tuning range

Electronic tuning range

*pout

Variation in P , overout

electronic tuning range

Electronic tuning sensitivity

Frequency temperature coefficient

Frequency pushing

9.4 GHz

Min. Typ. Max.

±50 - - MHz

200 250 - MHz

3.0 5.0 - mW

_ 1.5 _ dB

- 25 - MHz/V

- -1.0 - MHz/degC

- 30 - MHz/V

<P , min. measured under all conditions of tuning,out

TEMPERATURE

Range max.

OPERATING NOTE

-30 to +70

The active element will be damaged if the supply voltage is reversed. The oscillator

circuit provides some protection against forward transients greater than -8V but

care should be taken to avoid such transients as far as possible

.

MilliardCL8310 Page 2


CL8630


Fixed frequency Gunn oscillator for operation in the 10. 7GHz hand. Applies

-

tions include all forms ot miniature radar systems.

Centre frequency 10,687 GHz

Power output (at TV) typical 8.0 mWFrequency temperature coefficient -0.25 MH?./°C

Output via square plain flange WC16. WR90. 5985-99 -083-0052


Supply voltage (see operating notes)

Load v. s, w. r. max.

Starring current max.

Running current max.

+7.0 V

us: i

200 mA

160 mA

MullardMAY 1978 CL8630 Page 1


Supply voltage max.

Supply current max. running

starting

Load v.s.w. r. max.

CHARACTERISTICS at 25°C

Centre frequency

Power output (at 7. OV)

Frequency (fixed)


Frequency pushing

A.M. noise to carrier ratio (1Hz to

1 kHz bandwidth)

Second harmonic

+7. 5 V

160 mA

200 mA

1. 5: 1

10.687 GHz

Min. Typ. Max.

5.0 8.0 - mW10.675 10.687 10. 699 GHz

- -0.25 -0.4 MHz/°C

- 1.5 - MHz/V

-94 dB

-35 dBm

TEMPERATURE

Range max. to-HlO

OPERATING NOTES

1. The active element will be damaged if the supply voltage is reversed. Care should

be taken to avoid transients in excess of 8 volts. An 8. 2V voltage regulator diode

to shunt the power supply is recommended for this purpose.

2. The minimum supply voltage is 6. 5V for the frequency of oscillation to remain

within the characteristic limits.

3. It is recommended that a small capacitor (e.g. 10nF)- is connected across the

oscillator supply voltage terminals to suppress low frequency oscillation which

may occur in the power supply.

4. Modulation of the supply voltage within the 1 Hz to 1 kHz bandwidth will degrade

the a. m. noise to carrier ratio as a result of direct conversion by the Gunn device

to both a.m. and f. m. noise components . The f.m. component may be demodulated

by the non -linear response characteristic of the associated detecting element.



CL8630

OUTLINE DRAWING

m i1.9naxii

i i ®- 441 .9

i—

max i

i' {&: ©j

4 holes

4J5positioned to

suit standard

W.G.16 flange

5.8

4.7

HE

H5

J6.8.max

-E. o

o+7V

n:

05538

MullardCL8630 Page 3

X-BANDGUNNOSCILLATOR

CL8630S


Fixed frequency Gunn oscillator for operation In the 10 7GHz band as a self-

oscillating mixer (auto detector)

.


Power output (at 7V) typical 8.0 mW

Frequency temperature coefficient -0.25 MHz/°C

Output via square plain flange WG16. WR90. 5)965-99-083-0052



Load v.s.w.r. max.

Threshold current max.

Operating current max.

+7.0 V

1.5:1

200 mA

160 mA

MilliardMAY 1478 CL8630S Page 1


Supply voltage max . (d . c .

)

Supply voltage max. (for less than 1ms)


Centre frequency

Power output (at 7.0V)

Frequency (fixed)


Frequency pushing

Output voltage for input 66dB down

on output power (at 12 dB min.

signal + noise

noise

Second harmonic

Threshold current

Operating current

TEMPERATURE

Range max.

+7.5 V

+9.0 V

10.687 GHz

Min. Typ. Max.

5.0 8.0 - mW10.675 10.687 10.699 GHz

- -0.25 -0.4 MHz/°C

_ 4.0 - MHz/V

80 120 - mv

-35 - dBm

- 200 mA

120 160 mA

to +40

OPERATING NOTES

1. The active element will be damaged if the supply voltage is reversed. Care

should be taken to limit transients. An 8.2V 5% voltage regulator diode to shunt

the power supply is recommended for this purpose

.

2. The minimum supply voltage is 6.5V for the frequency of oscillation to remain

within the characteristic limits

.

3. It is recommended that a smallcapacitor (e.g. lOnF) is connected across the


may occur in the power supply

.

4 . A return signal 66dB down on radiated power will be achieved from a man target

of radar cross-section 1.0m2 at a range of 12m, when operating with an antenna

gain of 20dB.

5. System bandwidth 1Hz to 1kHz.

6. Power supply ripple in the amplifier passband will degrade the signal to noise

performance

.

MullardCL8630S Page 2


CL8630S

OUTLINE DRAWING

4 holes

4.45

4.35

positioned to

suit standard

W.G.16 flange

5.8

4.7J 6.8.

max

-E. o

o+7V

TV

D5538

MilliardCL8630S Page 3

a.f. output -•

+ 13.8V

O -ve

Gunn oscillator

VR is used to set voltage at 7.0V across Gunn oscillator.

CIRCUIT USED FOR SENSITIVITY MEASUREMENT



CL8631


Fixed frequency Guim oscillator for operation tn the 9. 35Gllz band,

tions Include all forms of miniature radar systems.

Applies -

Centre frequency 9. 35 GHz

Power output (at 7V) typical B.O raW

Frequency temperature coefficient -0. 25 MHzy°C

Output via square plain flange WG16. WR90, 5985-99-083-0052



Load v.s.w.r. max.

Starting current max..

Running current max

+7. V

1.5: 1

200 mA

160 mA

MullardMAY 1978 CL8631 Page 1


Supply voltage max.


starting

Load v. s.w.r. max.


Centre frequency

Power output (at 7. OV)

Frequency (fixed)


Frequency pushing

A. M. noise to carrier ratio

(1Hz to 1kHz bandwidth)

Second harmonic

TEMPERATURE

Range max.

OPERATING NOTES

+7.5 V

160 mA

200 mA

1.5: 1

9.35 GHz

Min. Typ. Max.

5.0 8.0 - mW

9.338 9.35 9.362 GHz

- -0.25 -0.4 MHz/degC

- 1.5 - MHz/V

-94 dB

-25 dBm

to +40 °C


should be taken to avoid transients in excess of 8 volts. An 8. 2V voltage reg-

ulator diode to shunt the power supply is recommended for this purpose.


..within the characteristic limits.

3. It is recommended that a small capacitor (e.g. lOnF) is connected across the



4. Modulation of the supply voltage within the 1Hz to 1kHz bandwidth will degrade

the a. m. noise to carrier ratio as a result of direct conversion by the Gunn

device to both a. m. and f . m. noise components.



OUTLINE DRAWING

41.9max

4 holes

{/* t

»

i

f©-©> positioned to

suit standard

41.9W.G. 16 flange

max

]'

(©• -©J

CL8631

5.8

4.7

.19.5.

max

-Eo

o+ 7V

D5541



CL8631S


Fixed frequency Gumi oscillator for

oscillating mixer (auto detector).

operation in the 9. 3SGHz band as a self-



Frequency temperature coefficient -0.25 MHz/OC

Output via square plain flange WG16, WR90. 59R5-99-OR3-0O52


Supply voltage {see operating notes)

Load v. s. w. r. max.



+7.0 V

LS: 1

200 mA

160 mA

MullardMAY 1978 CL8631S Page 1


Supply voltage max. (d. c.

)



Centre frequency

+7.5

+9.0

9.35

Output voltage for input 66dB down

on output power (at l2dB min.

signal + noise80

to +40

GHz

Min. Typ. Max.

Power output (at 7. 0V) 5.0 8.0 - mW

Frequency (fixed) 9.338 9.35 9.362 GHz

Frequency temperature coefficient - -0.25 -0.4 MHz/°C

Frequency pushing - 4.0 - MHz/V

ZU " HV

25 - dBm

- 200 mA

20 160 mA

noise

Second harmonic

Threshold current

Operating current

TEMPERATURE

Range max.

OPERATING NOTES


should be taken to limit transients. An 8. 2V 5% voltage regulator diode to shunt

the power supply is recommended for this purpose.






4. A return signal 66dB down on radiated power will be achieved from a man target


gain of 20dB.


6. Power supply ripple in the amplifier passband will degrade the signal to noise

performance.



OUTLINE DRAWING

41.9max

4 holes

^•"»i

r©- -©> positioned to

suit standard

41.9W.G.16 flange

max

1 ' w -©J

CL8631S

05541


T -0+13.8V

33H

a.f. output -*-

BFY52 (>10nF==

IOOuFS

470A

VR1250A r ^pre -set (±\ BZY88

1 I

1.2 k£l

C8V2

-O -ve

Gunn oscillator

VRi is used to set voltage at 7.0V across Gunn oscillator.




CL8632


Fixed frequency Gunn oscillator for operation In the 9. 47GHz hand. Applica-

tions include all forms of miniature radar systems.

Centre frequency 9.47 OHb


Frequency temperature coefficient -0, 2S MHz/°C

Output via square plain flange WGI6. WR90. 59B5 -99-083-0052



Load v. s.w. r. max.

Starting current max.

Running current max.

+7,0 V

1.5: 1

200 rnA

16Q mA

MAY 1978Milliard

CLS632 Page 1


Supply voltage max.


starting

Loadv.s.w. r. max.

•CHARACTERISTICS at 25°C

Centre frequency

Power output (at 7.0V)

Frequency (fixed)


Frequency pushing

A.M. noise to carrier ratio

(1Hz to 1kHz bandwidth)

Second harmonic

+7.5 V

160 mA

200 mA

1.5: 1

9.35 GHz

Min. Typ. Max.

5.0 8.0 - mW9.458 9.47 9.482 GHz

- -0.25 -0.4 MHz/degC

- 1.5 - MHz/V

-94 dB

-25 dBm

TEMPERATURERange max.

OPERATING NOTES

Oto+40


be taken to avoid transients in excess of 8 volts. An 8. 2V voltage regulator diode

to shunt the power supply is recommended for this purpose.

2. The minimum supply voltage is 6.5V for the frequency of oscillation to remain





4. Modulation of the supply voltage within the 1Hz to 1kHz bandwidth will degrade

the a.m. noise to carrier ratio as a result of direct conversion by the Gunndevice to both a.m. and f. m. noise components.


CL8632

OUTLINE DRAWING

41.9max

W41.9max

\®:

-<±f-

©

4 holes

w4.35

positioned to

suit standard

W.G.16 flange

5.84.7

05541

X-BAND GUNN CL8632SOSCILLATOR


Fixed frequency Gunn oscillator for

oscillating mixer {auto detector).

operation in the 9 .47GI11-. band as a self-

Centre frequency 9.47 QHs


Frequency temperature coefficient -0.2S MHz/°C

Output via square plain flange WG16 WR90. 5985-99-083-0052



Load v.s.w.r. max,



+7.0 V

1.5:i

200 MlA

1G0 mA

MullardMAY 1978 CLB632S Page 1


Supply voltage max . (d . c.

)

+7.5 V

Supply voltage max . (for less than 1ms) +9.0 V

•CHARACTERISTICS at 25°C


Min. Typ. Max.

Power output (at 7.0V) 5.0 8.0 - mWFrequency (fixed) 9.458 9.47 9.482 GHz

Frequency temperature coefficient - -0.25 -0.4 MHz/°C


120 - MV

-25 - dBm

- 200 mA

120 160 mA

to +40 °C

Output voltage for input 66dB downon output power (at 12dB min.

signal + noiseffl

noise

Second harmonic

Threshold current

Operating current

TEMPERATURE

Range max.

OPERATING NOTES


should be taken to limit transients. An 8.2V 5% voltage regulator diode to shunt

the power supply is recommended for this purpose

.

2 . The minimum supply voltage is 6 . 5V for the frequency of oscillation to remain

within the characteristic limits

.






gain of 20dB

.


6 . Power supply ripple in the amplifier passband will degrade the signal to noise

performance

.



CL8632S

OUTLINE DRAWING

41.9max

i

f©- &41.9max

'[© ©J

4 holes

w4.35

positioned to

suit standard

W.G.16 flange

05541


a.f. output -»

10nF

0+13.8V

O -ve

Gunn oscillator

VR1

is used to set voltage at 7.0V across Gunn oscillator.




CL8633


Fixed frequency Gunn oscillator for operation in the 10.5GHz band. Applica-

tions include all forms of miniature radar systems.

Centre frequency

Power output {at 7V} typical


Output via square plain flange WG1S, WR90. 5985-99-083-0052

10.525 GHz

8.0 mW-0.25 MHz/°C



Load v.s.w.r- max.



+7.0 V

i.5:i

200 mA

160 mA

MilliardMAY 1978 CLS633 Page 1

Min. Typ. Max.

5.0 8.0 - mW10.513 10.525 10.537 GHz

- -0.25 -0.4 MHz/°C

- 4.0 - MHz/V

-94 dB

-35 dBm


Supply voltage max. (d.c.

)

+7.5 V

Supply voltage max.

(for less than lms) +9.0 V



Power output (at 7 . V)

Frequency (fixed)


Frequency pushing

A.M. noise to carrier ratio (1Hz to

1kHz bandwidth)

Second harmonic

TEMPERATURE

Range max. to +40 °C

OPERATING NOTES


be taken to limit transients. An 8. 2V 5?L voltage regulator diode to shunt the

power supply Is recommended for tills purpose.

2. The minimum supply voltage is 6.5V for the frequency of oscillation to remainwithin the characteristic limits.




4. When used in aDoppler radar system, modulation of the oscillator supply voltage

will degrade the a.m. signal to noise ratio at the output of the associated mixer,

as a result of direct conversion by the Gunn device to a.m. and f.m. noise

components. The a.m. component will contribute directly and the f.m. componentmay contribute from demodulation by the slope of the bandpass characteristic of

the mixer.

5. Second harmonic level is measured into a W.G.16 load with a v.s.w.r. <1.1:

1

at fundamental frequency. The level is equivalent to that radiated from a low

v.s.w.r. X-band antenna, for example, Mullard ACX-01A.


OUTLINE DRAWING

iU.9nax

4 holesr

^/ *435,

t . %- $ positioned to

suit standard

41.9j

— W.G.16 flange

max!

' 1 if- 4

CL8633

5.8

4.7^.16.8.max

-Eo

o+7V

n05538



CL8633S


Fixed frequency Gunn oscillator fur operation in the 10 5GJI^ hand as a sclf-

oscillating mixer (auto detector).

Centre frequency KK523 omPower output (at 7V) typical 8.0 raW

Frequency temperature coefficient -o.zr> MH/./^C

Output via square plain flange WGlfi wnuo, r iS EJ-99-083-0052


Supply voltage {see operating notes)

Load v , s .w . r . mux .



+7.0 V

1 .5:1

200 mA

160 mA

MullardMAY 1978 CL8633S Page 1

+7.5 V

+9.0 V

10.525 GHz

Min. Typ. Max.

5.0 8.0 - mW10.513 10.525 10.537 GHz- -0.25 -0.4 MHz/°C

- 1.5 - MHz/V

120 - MV

-35 - dBm- 200 mA

120 160 mA


Supply voltage max . (d . c.

)



Centre frequency

Power output (at 7 . 0V)

Frequency (fixed)


Frequency pushing

Output voltage for input 66dB downon output power (at 12dB min.

signal + noise

noise 80

Second harmonic

Threshold current

Operating current

TEMPERATURE

Range max

.

to +40 °C

OPERATING NOTES

1. The active element will be damaged if the supply voltage is reversed. Careshould be taken to limit transients . An 8 . 2V 5% voltage regulator diode to shuntthe power supply is recommended for this purpose.

2. The minimum supply voltage is 6.5V for the frequency of oscillation to remainwithin the characteristic limits

.


oscillator supply voltage terminals to suppress low frequency oscillation whichmay occur in the power supply.


of radar cross-section 1.0m2 at a range of 12m, when operating with an antennagain of 20dB.


6 . Power supply ripple in the amplifier passband will degrade the signal to noiseperformance

.


X-BANDGUNNOSCILLATOR

OUTLINE DRAWING

iU.9nax

U holesr ^ 435,

i i % Or positioned to

suit standard

41.9j

— W.G.16 flange

max!

'' w 4

CL8633S

5.8

4.7J6.8.max

-E. o

o

+7V

D5538


33H

a.f. output -*-

BFY52 Q-ioouf:

" F

f~ff 1 V

T -0+13.8V

470fl

VR125011/\J 250n >»-"v

T 1.2 kn

4-\ BZY88C8V2

Gunn oscillator

VR is used to set voltage at 7 . OV across Gunn oscillator

.




CL8640RCL8640T

Mechanically and electronically tuned Gunn -effect oscillators In the 10. 5GHz band.

The high Q cavity offers frequency stability compatible with application as the

transmitter (CL8640T)and receiver local oscillator (CL864GR) in short range data

link systems.


CL8640R CL8640T

Centre frequency 10.49 10. 56 GHz

Mechanical tuning range min. 120 120 MHz

Electronic tuning range min. 30 8.0 MHz

Power output typ. 6.0 6.0 mWOperating voltage -7.0 -7.0 V

Output via square plain flange WC. 16.WR90. 5985-99-083 -0052

CLS640R - receiver local oscillator

CL8640T - transmitter

MARCH 1978Mullard

CL8640R-Page 1

TYPICAL OPERATING CONDITIONS

Supply voltage (note 1)

Starting current

Running current

-7.0

250

170

V

mA

mA

VV

Tuning voltage (modulation) (notes 1 and 2) CL8640R -0. 5 to -7. 5

CL8640T -0.5 to -1.5


Supply voltage ma*.

Supply voltage (transient) max.

Tuning voltage max.

Tuning current max.

Load v. s.w. r. max.

CHARACTERISTICS (at 25°C)

Centre frequency CL8640RCL8640T


Electronic tuning range CL8640R

(notes 2 and 3) CL8640T

Power output at -7.0V

Frequency pushing

Frequency pulling (note 4)


Tuning current

TEMPERATURE

Operating range

Storage range

OPERATING NOTES


should be taken to avoid transients in the supply voltage.

2. The electronic tuning provided by the varactor diode circuit is non -linear,

following an approximately exponential rate of change of capacitance at low tuning

voltages.

3. For CL8640R the tuning voltage range is -0.5V to -7.5V with the electronic

centre at -2.5V.

4. V.S.W.R. = 1.5:1

-7.2 V

-8.0 V

-12 V

100 MA

1. 5:1

10.49 GHz10.56 GHz

Min. Typ. Max.

±60 - - MHz

±15 - - MHz

±4.0 - - MHz

4.0 6.0 - mW- 3.0 MHz/V

- 1.5 - MHz

- -0.25 -0.3 MHz/°C

- - 10 piA

CL8640R CL8640T

-15 to +70 +25 to +70 °C

-30 to +100 -30 to +100 °C

MilliardCL8640R-Page 2


CL8640RCL8640T

4 holes 04'3

positioned to suit

standard W-G-16 flange

CL8640Ronly

«K

168"max"

4030

~rAll dimensions in mm

OUTLINE DRAWING

MilliardCL8640R-Page 3

CL8690

X-BAND GUNN OSCILLATOR

This is an electronically and mechanically tuned oscillator suitable for use as a solid state replacement

for reflex klystrons. It may be used as a local oscillator in marine radar systems. The device has been

tested to ensure its compliance with the requirements of Board of Trade specification

BOTSBN 115 10057/1.


Output connector

Centre frequency



Power output

Operating voltage

WG16

9.375 GHz

min. ±75 MHz

min. ±25 MHz

min. 5 mW-7.5 V

u Mullard rNovember 1978

CJL8690

Jk.TYPICAL OPERATING CONDITIONS

Supply voltage (note 1

)

Supply current

Tuning voltage (notes 1 and 2)

Tuning current

LIMITING VALUES at 20 °C

In accordance with the Absolute Maximum System

Supply voltage

Supply current (note 3)

Tuning voltage

Tuning current

Storage temperature

Ambient operating temperature

CHARACTERISTICS at 20 °C

Centre frequency (note 4)



Power output (note 5)

Frequency deviation over temperature range

Frequency pushing

Frequency pulling (note 6)

Mechanical tuning rate

-7.5 V

160 mA

-1to-12 V

10 juA

max. -8 V

max. 200 mAmax. -15 V

max. 100 /*A

-45 to +85 °C

15 to +50 °C

9.375 GHz

min. typ. max.

±75 ±100 MHz

±25 ±30 MHz

5 8 mW±15 ±25 MHz

10 15 MHz/V

20 MHz

250 MHz/turn

Notes

1. The active element will be damaged if the supply voltage is reversed. In addition, care should be

taken to avoid transients in the supply voltage as far as possible.

2. The tuning voltage should have a source impedance of less than 1 kifi.

3. During the switch-on period, the Gunn device current will rise to a peak of up to 300 mA at

approximately —4 V and then fall to the specified operating current at —7.5 V.

4. The centre frequency is measured with supply voltages of —7.5 V to the Gunn device and —5 V to

the varactor diode.

5. Power output is measured under all conditions of tuning and temperature.

6. The load v.s.w.r. is 1.3 max. Frequency pulling is measured over all phases of mismatch.

November 1978Y Milliard C?

X-band gunn oscillator CL8690

APPLICATION NOTES

1. Three solder pins are provided for connection of the supply voltages and the earth contact.

2. To prevent parasitic low frequency oscillation, a 1 nF capacitor is connected across the Gunn device.

3. The centre frequency may be set within the limits given in the characteristics, by turning the screw.

4. A zener diode should be connected across the Gunn device supply for transient protection.


29.7max

4> 3:5min for tuning screw access

Gunn supply voltage

Tuning supply voltage

-7.5V -25Vmax ±~ CL 8690

Mullard

40. 5max

A.

~T24.5max

9.6nom

T-;

LA2.5max

Mechanical

tuningr

4 notes<t> 4.35/4.45 positioned

to suit standard waveguide 16

V

B&-nt-Lj

7

41 .7max

41 .7max

U Mullard YNovember 1978

CL8690

20 1 D8278

Tuning

voltage

(V)

15 —

10 Howeroutput

A \

Ti

5

-50

20

Powpoutpi

(mW)

15

10

-25 +25 +50 TemperaturefC) +100

Typical power output and tuning voltage as a function of temperature.

(Output frequency constant at 9.385 G Hz)

9.45

Frequency

(GHz)

9.40

9.35

9.30

November

|I I | | | |

--.-^j^ -g—Tamb 25 C '

r-*.-"*'

ILW'' **"""««^ — >a "* *

r ^^»" -+20Cj~^<"^^^ A^^v\ - ^^""^

^ "^. ^^ 7p. r - — ^^>^ ^^ » —^^^

^^ ^^ •* ^ S'

. ^ ^ ^ ^^ '"

> ^ ^ <* ^^ ? ^^

^ > ^ ^/ ^ ^?

2 > rf!^^ ^ jW

~*Z i?

^ ^ ^/ ^

^ ^

r7

i_5 -10 Tuning voltage (V)

Typical output frequency as a function of tuning voltage at

three ambient temperatures

1978]

[ Milliard

-20

U

X-band gunn oscillator CL8690

15 D8280

Power t .- jvr

output

(mW)

'amb zo

=+2(TC

10=+ -7K-r

5

1

—5 —10 Tuning voltage (V)

Typical power output as a function of tuning voltage at

three ambient temperatures

-20

9.45 D8281

Frequency

(GHz)

9.40 -12V

5V

r

9 35

-1V

9.30

-100 -75 -50 -25 +25 +50 +75 Temperature (°C)

Typical output frequency as a function of temperature

at three tuning voltages.

V Milliard Y November 1978

CL8690

20 08282

Power

output

(mW)

15

10-12V

•% -5V-1V

5

.

-50 -25 +25 Temperature (°C) +75 +100

Typical power output as a function of temperature at

three tuning voltages

6 November 1978T Milliard U

DOPPLER AND TRAFFICRADARS

CL8880BN

X-BAND TRAFFIC RADAR SENSOR

Fixed frequency radar traffic sensor, with direction sense, for operation in the 10.6 GHz band. The

sensor uses Ooppler radar to provide vehicle actuation for permanent or portable traffic light signals.

It complies with national government regulations {in the U.K. P.o.E. specifications MCE01 11,

MCE01 14 and MCG0500 and Home Office regulation BR14, 1975 specification).


Centre frequency

Transmitted power

Detection range for small vehicle moving at 30 m.p.h.

with sensor mounted 2.5 m above typical road surface

Supply voltage (a.c.)

typ.

10.587 GHz

5 mW

100 m110 V

u MilliardOctober 1978

CL8880BN


Supply voltage (110 V^ centre-tapped) 55-0-55 V

Power consumption typ. 7 W

LIMITING VALUES \In accordance with the Absolute Maximum System

Supply voltage (a.c.) 55-0-55± 20% V

Storage temperature — 20 to + 70 °C

Ambient operating temperature — 15 to + 50 °C

CHARACTERISTICSmin. typ. max.

Centre frequency

fixed in the range 10.577 10.587 10.597 GHz

Transmitted power — 5 10 mW

Detection range for vehicle moving

at 30 m.p.h. with sensor mounted2.5 m above typical road surface 85 100 140 m

Mass 3 kg

CABLE ENTRY

At bottom rear of sensor

October 1978"Y Milliard~~~ V

X-band traffic radar sensor CL8880BN

OPERATING NOTES

1. The sensor is of single-chassis construction.

2. It is recommended that the sensor is mounted so that the centre of the microwave window (radome)

is not less than 150 mm above the cowl of the red signal. There will then be minimal interruption of

the beam by the cowl and the near-field performance of the sensor will not be impaired.

3. In operation, the traffic signal controller demand input is connected to the 'relay output' terminals.

In the standard unit for use with portable signal heads, the relay is energized closed, except when a

demand is present.

4. Units with 'normally open' relay connections are available on request.

5. A 47 n resistor in series with the relay output terminals is included for overcurrent and overvoltage

protection.

6. Upon detection of oncoming traffic, the relay in the sensor is de-energized and a pair of isolated

contacts is opened to signify detection.

7. These contacts remain open during the detection of a stream of oncoming traffic. The minimum

open time is nominally 1 second.

8. Signals caused by departing vehicles are ignored.

9. Should a fault occur in the sensor, or its supply voltage be interrupted, then the sensor relay will be

permanently de-energized and a continuous demand will be applied to the controller. The traffic

signals will then operate automatically in a fixed-time manner.

10. The power supply for the sensor is derived from the main traffic control unit; a 55-0—55 V centre-

tapped a.c. supply is necessary.

11. The cable colour code shown in table 1 must be observed.

TABLE 1

Cable colour code

Red 55Vac

Orange 55Vac

Black V (centre tap of 1 10 V a.c. supply)

Green/Yellow I

Green J

Normally closed output contacts (isolated)

12. The equipment detects lone vehicles approaching the traffic signals in the presence of large

departing vehicles or a heavy stream of departing traffic. This is an important feature of the design

philosophy of the radar process circuit.

13. The equipment does not give false outputs in the absence of moving targets.

14. Signals reflected from fluttering or waving trees at reasonable distances from the sensor do not

cause unwanted outputs, even if the sensor is aimed directly at the trees.

15. For temporary traffic light systems, a 'NUDGE' facility is included.

16. The NUDGE facility is such that in the absence of a demand from approaching traffic for a period

of 2Y2 minutes, a 'phantom' demand is applied. The relay in the sensor is de-energized and the

sensor then returns to the vehicle-actuated mode. The period is set by a digital timer which is

indenendent of the ambient temperature.

U Milliard October 1978

CL8880BN

J\.OPERATING NOTES (continued)

1 7. The 'phantom' demand overcomes the rare lock-up situations in traffic flow at temporary traffic

lights where the possibility of a permanent 'red-red' can occur, caused by the non-detection of

approaching vehicles.

SITE TESTS

1

.

To check the operation of a sensor, set it up in the operating position with the power supplies

connected and connect a multimeter such as the AVO Model 8, switched to a resistance-measuring

range, across the normally-closed contacts. (Note: high-voltage circuit testers, such as the Megger,

must not be used as they will damage the sensor). The measured resistance should be approximate!'

47 £2; this is the value of the protection resistor incorporated in the circuit.

2. Check the a.c. supply voltages at the microwave head. The line-to-line voltage should be 1 10 Vrmsand the voltage between each line and the V terminal should be 55 Vrms . The tolerance on these

voltages is ±20%.

3. Arrange for a vehicle, preferably a small car, to be driven towards and past the sensor at approx-

imately 30 m.p.h. When the car is between 140 and 80 metres from the sensor (see fig.2), the

measured resistance between the normally-closed contacts should quickly increase to indicate an

open-circuit. This condition should continue for approximately 1 second after the car has passed

out of the sensor's detection range.

WORKSHOP TESTS FOR INOPERATIVE SENSORS

1

.

These tests are intended to reveal inoperative sensors only. It must be noted that they do not

replace any range tests carried out with a vehicle under site conditions.

There is no attempt to correlate range measurements with these tests as they will only inform the

operator that a sensor is functioning correctly, not functioning or is functioning in reverse. They

will, however, ensure that there is some consistency of testing between different operators.

2. Ideally, the sensor should be sited in an environment free, as far as possible, from extraneous

movements of large bodies such as people, fork lift trucks, etc.

3. The sensor should be placed on a level surface, e.g. a bench, as near to the edge as possible to

avoid reflections from the bench surface.

KWWWVj\W^

Incorrect Correct 08198

It should not be pointed directly at fluorescent lights as they may cause false demands to beregistered due to interference.

4. Ensure that the environment is free as far as possible from microwave interference, for example,

radar traffic sensors on soak test in the vicinity of the beam could cause interference giving rise to

false demands.

October 1978r

Milliard C?


5. The supply cable should be connected in accordance with the coding given in table 1 on page 3.

6. Demands may be observed by connecting the signal output leads (green and green/yellow) to a

controller with a lamp which indicates presence of a demand. Alternatively, a bulb and power

supply may be connected in series with the signal leads via a simple connector block such as the

push-button type 'quick connector' available from Radiospares. See diagram below

Connector

Signal leads from

radar traffic sensor

D8199

Green / yellow

Green Supply (battery or low

voltage transformer)

10.

This simple method will eliminate the possibility of controller faults.

With the supply connected and switched on, the indicator lamp should be illuminated.

A demand will be indicated when the lamp is extinguished.

Leave the sensor pointing into free space and check for false demands. The lamp should remain

alight for approximately 2 to 2% minutes until the 'nudge' circuitry puts in a 'phantom' demand.

These 'nudge' demands will reappear at regular intervals of 2 to 2Vi minutes; no other demands

should occur between them.

With the sensor placed on a level surface, (see note 3), about 1% metres from ground level, the

operator should stand about 5 metres away from the sensor in a direct line with the microwave

window (radome) and should have the demand indicator lamp in view. He should then walk at

normal walking pace towards the sensor, stopping at about 1 metre from it. If the sensor is

functioning correctly, a demand will be registered between starting to walk and stopping. He

should then wait for the demand to clear and then walk backwards to his starting point No

demand should be registered. If a demand is observed, the sensor is working in reverse and is

therefore faulty.

V Mullard 1October 1978

CL8880BN


Mounting p4gn«

Radome (screen) anglFinish — Semi matt block enamel

Minimum external length of cable (supplied) = Imetn

October 1978 Mullard


D6201963/3

V

Fig.1 Typical polar diagram of traffic radar sensor.

The broken line indicates the preferred mounting

angle of 15°. This affects only the orientation of

the vertical pattern

Milliard YOctober 1978

CL8880BN

08202(963/21

Fig.2 Detection curves obtained from road tests using six different traffic radar sensors

I I

* Energised closed under no -demand condition

V— Relay output *Relay output

-0V

-55V a.c.

-J— 55V a.c.

, Supply cable

(see Table D

Fig.3 Terminal block connections. The two 55 V terminals on the supply cable are of

opposite phase and are part of a 55—0—55 V a.c. supply.

October 1978T Milliard Zl


QUALITY APPROVAL OF TRAFFIC RADAR SENSORS

The sensors are currently produced at the Mullard plant at Hazelgrove, Cheshire. The Quality

Department within Mullard Hazelgrove operates to standards set by BS9000 and is supported by a

resident E.Q.D. inspector. Product developments are steered through a rigorous release procedure;

development sample are appraised before approval for production.

In the case of these radar sensors, the individual semiconductor diodes are the subject of a separate

quality release exercise, in addition to that carried out on the final sensor. In production, the semi-

conductor diodes are batch-approved by the Quality Department before assembly.

Quality control procedures for production include:

1. Raw material inspection.

2. Quality control within the assembly areas.

3. 100% electrical testing of primary parameters and sample testing to appropriate A.Q.L.

4. Environmental sample testing.

5. Measurement of secondary electrical parameters on batch samples.

6. Calibration and standardization of test procedures.

Where customer requirements differ from the standard commercial product, liasion is established

with specific customers and suitable procurement specifications are agreed.

U Mullard Y-October 1978

CL8880BNC

X-BAND TRAFFIC RADAR SENSOR

Fixed frequency radar traffic sensor, with direction sense, for operation in the 10.6 GHz band. The

sensor uses Doppler radar to provide vehicle actuation for permanent or portable traffic light signals.

It complies with national government regulations (In the U.K. D.o.E. specifications MCE0111,

MCE0114 and MCG0500 and Home Office regulation BR 14, 1975 specification!.


Centre frequency

Transmitted power

Detection range for small vehicle moving at 30 m.p.h.

with sensor mounted 2.5 m above typical road surface


typ.

10.587 GHz

5 mW

100 m

110 V

u MilliardOctober 1978

CL8880BNC


Supply voltage (1 10 Vac centre-tapped)

Power consumption

LIMITING VALUES

In accordance with the Absolute Maximum System


Storage temperature

Ambient operating temperature

CHARACTERISTICS

Centre frequency

fixed in the range

Transmitted power

Detection range for vehicle moving

at 30 m.p.h. with sensor mounted

2.5 m above typical road surface

Mass

CABLE ENTRY

Through the mounting foot

55-0-55 V

typ. 7 W

55-0-55±20% V

-20 to + 70 °C

-15 to + 50 °C

min. typ. max.

10.577 10.587 10.597 GHz

5 10 mW

85 100 140 m3 kg

October 1978Y Milliard U

X-band traffic radar sensor CL8880BNC

OPERATING NOTES

1. The sensor is of single-chassis construction.

2. It is recommended that the sensor is mounted so that the centre of the microwave window (radome)

is not less than 150 mm above the cowl of the red signal. There will then be minimal interruption of

the beam by the cowl and the near-field performance of the sensor will not be impaired.

3. In operation, the traffic signal controller demand input is connected to the 'relay output' terminals.

In the standard unit for use with portable signal heads, the relay is energized closed, except when a

demand is present.

4. Units with 'normally open' relay connections are available on request.

5. A 47 S2 resistor in series with the relay output terminals is included for overcurrent and overvoltage

protection.

6. Upon detection of oncoming traffic, the relay in the sensor is de-energized and a pair of isolated

contacts is opened to signify detection.

7. These contacts remain open during the detection of a stream of oncoming traffic. The minimum

open time is nominally 1 second.

8. Signals caused by departing vehicles are ignored.

9. Should a fault occur in the sensor, or its supply voltage be interrupted, then the sensor relay will be

permanently de-energized and a continuous demand will be applied to the controller. The traffic

signals will then operate automatically in a fixed-time manner.

10. The power supply for the sensor is derived from the main traffic control unit; a 55-0—55 V centre-

tapped a.c. supply is necessary.

1 1

.

The cable colour code shown in table 1 must be observed.

TABLE 1

Cable colour code

Red 55Vac

Orange 55Vac

Black V (centre tap of 1 10 V a.c. supply)

Green/Yellow 1

GreenJ

Normally closed output contacts (isolated)

12. The equipment detects lone vehicles approaching the traffic signals in the presence of large

departing vehicles or a heavy stream of departing traffic. This is an important feature of the design

philosophy of the radar process circuit.

13. The equipment does not give false outputs in the absence of moving targets.

14. Signals reflected from fluttering or waving trees at reasonable distances from the sensor do not

cause unwanted outputs, even if the sensor is aimed directly at the trees.

15. For temporary traffic light systems, a 'NUDGE' facility is included.

16. The NUDGE facility is such that in the absence of a demand from approaching traffic for a period

of 2% minutes, a 'phantom' demand is applied. The relay in the sensor is de-energized and the

sensor then returns to the vehicle-actuated mode. The period is set by a digital timer which is

independent of the ambient temperature.

u Milliard Y October 1978

CL8880BNC

OPERATING NOTES (continued)

1 7. The 'phantom' demand overcomes the rare lock-up situations in traffic flow at temporary traffic

lights where the possibility of a permanent 'red-red' can occur, caused by the non-detection of

approaching vehicles.

SITE TESTS

1. To check the operation of a sensor, set it up in the operating position with the power supplies

connected and connect a multimeter such as the AVO Model 8, switched to a resistance-measuring

range, across the normally-closed contacts. (Note: high-voltage circuit testers, such as the Megger,

must not be used as they will damage the sensor). The measured resistance should be approximately

47 J2; this is the value of the protection resistor incorporated in the circuit.

2. Check the a.c. supply voltages at the microwave head. The line-to-line voltage should be 1 10 Vrmsand the voltage between each line and the V terminal should be 55 Vrms . The tolerance on these

voltages is ±20%.

3. Arrange for a vehicle, preferably a small car, to be driven towards and past the sensor at approx-

imately 30 m.p.h. When the car is between 140 and 80 metres from the sensor (see fig.2), the

measured resistance between the normally-closed contacts should quickly increase to indicate an

open-circuit. This condition should continue for approximately 1 second after the car has passed

out of the sensor's detection range.

WORKSHOP TESTS FOR INOPERATIVE SENSORS

1

.

These tests are intended to reveal inoperative sensors only. It must be noted that they do not

replace any range tests carried out with a vehicle under site conditions.

There is no attempt to correlate range measurements with these tests as they will only inform the

operator that a sensor is functioning correctly, not functioning or is functioning in reverse. They

will, however, ensure that there is some consistency of testing between different operators.

2. Ideally, the sensor should be sited in an environment free, as far as possible, from extraneous

movements of large bodies such as people, fork lift trucks, etc.

3. The sensor should be placed on a level surface, e.g. a bench, as near to the edge as possible to

avoid reflections from the bench surface.

y\v^v\v\\v\v^

HiIncorrect Correct 08198

It should not be pointed directly at fluorescent lights as they may cause false demands to be

registered due to interference.

4. Ensure that the environment is free as far as possible from microwave interference, for example,

radar traffic sensors on soak lest in the vicinity of the beam could cause interference giving rise to

false demands.

October 1978¥ Mullard U


5. The supply cable should be connected in accordance with the coding given in table 1 on page 3.

6. Demands may be observed by connecting the signal output leads (green and green/yellow) to a

controller with a lamp which indicates presence of a demand. Alternatively, a bulb and power

supply may be connected in series with the signal leads via a simple connector block such as the

push-button type 'quick connector' available from Radiospares. See diagram below

Connector

Signal leads from

radar traffic sensor

D8199

Green / yellow

Green Supply {battery or low

voltage transformer)

10.

This simple method will eliminate the possibility of controller faults.

With the supply connected and switched on, the indicator lamp should be illuminated.

A demand will be indicated when the lamp is extinguished.

Leave the sensor pointing into free space and check for false demands. The lamp should remain

alight for approximately 2 to 2% minutes until the 'nudge' circuitry puts in a 'phantom' demand.

These 'nudge' demands will reappear at regular intervals of 2 to 2% minutes; no other demands

should occur between them.

With the sensor placed on a level surface, (see note 3), about VA metres from ground level, the

operator should stand about 5 metres away from the sensor in a direct line with the microwave

window (radome) and should have the demand indicator lamp in view. He should then walk at

normal walking pace towards the sensor, stopping at about 1 metre from it. If the sensor is

functioning correctly, a demand will be registered belween starting to walk and stopping. He

should then wait for the demand to clear and then walk backwards to his starting point Nodemand should be registered. If a demand is observed, the sensor is working in reverse and is

therefore faulty.

U Milliard^r

October 1978

CL8880BNC

MECHANICAL DATA

yv.Dimensions in mm

Radome (screen) angle

-Minimum external length of cable

(supplied) =1 metre

Section on X

,|, Irl 3 notes \ in BSW[Fastening screws not

Recommended depth

engagement in body

Supplied.1

of

13mm J

Finish - Semi matt block enamel

October 1978

fMilliard V


90° 8006201963/3

u

Fig, 1 Typical polar diagram of traffic radar sensor.

The broken line indicates the preferred mounting

angle of 15°. This affects only the orientation of

the vertical pattern.

MullardOctober 1978

CL8880BNC

Fig.2 Detection curves obtained from road tests using six different traffic radar sensors

^— Relay output *- Relay output

-j-OV

-r- 55V a.c.

-j— 55V a.c.

, Supply cable'(see Table 1)

II

* Energised closed under no -demand condition P963/M

Fig.3 Terminal block connections. The two 55 V terminals on the supply cable are of

opposite Dhase and are Dart of a 55—0—55 V a.c. suddIv.

October 1978T Milliard U


QUALITY APPROVAL OF TRAFFIC RADAR SENSORS

The sensors are currently produced at the Mullard plant at Hazelgrove, Cheshire. The Quality

Department within Mullard Hazelgrove operates to standards set by BS9000 and is supported by a

resident E.Q.D. inspector. Product developments are steered through a rigorous release procedure;

development sample are appraised before approval for production.

In the case of these radar sensors, the individual semiconductor diodes are the subject of a separate

quality release exercise, in addition to that carried out on the final sensor. In production, the semi-

conductor diodes are batch-approved by the Quality Department before assembly.

Quality control procedures for production include:

1. Raw material inspection.

2. Quality control within the assembly areas.

3. 100% electrical testing of primary parameters and sample testing to appropriate A.Q.L.

4. Environmental sample testing.

5. Measurement of secondary electrical parameters on batch samples.

6. Calibration and standardization of test procedures.

Where customer requirements differ from the standard commercial product, liasion is established

with specific customers and suitable procurement specifications are agreed.

U Mullard YOctober 1978

X-BAND DOPPLERRADAR MODULE

CL8960

yUlCK REFERENCE DATA

Fixed frequency Gtinn oscillator and mixer cavity for operation In the 10,7GHz

hand. Applications Include all forms of Doppler radar systems.

Centre frequency

Power output (at 7. OV) typ.

Output voltage (typ, ) for input power

lOOdB down on output powersignal ( noise

at l&iB min. — ;

noiee

(see page 6 and note 1)

Supply voltage

10.687

10

40

7.0

mW

V

MullardOCTOBER 1978 CL8960 Page 1


Supply voltage (see note 2)

Supply current (see note 3) (typ.

)

D. C. mixer bias current (into a. f.

terminal w. r. t. earth)

A.F. load (see page 5)


Supply voltage (max. d. c.

)

Supply voltage transient max.(1.0ms max.)

Tstg range

Tamb ranSe


Centre frequency

Output voltage for input powerlOOdB down on output power (at

,„,„ . signal + noise. .

18dB min. —

—

:) (see

noise

notes 1 and 4 and page 6)

Output power at 7. 0V

Frequency fixed


Frequency pushing

Second harmonic

Diode current (see note 3)

Polar diagram

Min.

20

10. 675

+7. ± 0.

1

V

40 mA

30 to 35 MA

10 kn

+7.5

9.0

-10 to +70

to +40

Typ. Max.

V

°C

GHz

40 - «v

10 - mW

10. 687 10. 699 GHz

-0.2 -0.3 MHz/OC

4.0 - MHz/V

35 - dBm

30 165 mA

see page 7

MASS 170

Alternative antennae and operating frequencies may be made to suit customers

'



X-BAND DOPPLER CL8960RADAR MODULE

OPERATING NOTES -*"

1. A return signal lOOdB down on radiated power will be achieved from a mantarget of radar cross-section 1.0m2 at a range of 15m, when operating with the

antenna supplied (antenna gain is 5dB typ. ).

Extended range may be obtained for a reduced —*-—: and this may be6 } noise '

acceptable if the environment in which the system operates is stable, i.e. , free

from extraneous moving or vibrating objects. For example, HOdB path loss is

obtained from a man target of radar cross-section 1.0m2 at a range of 25m and

the ———: is reduced to l5dB with an output voltage of l6fzV min.noise

Alternatively, the range may be increased by an increase in target radar cross

-

section or by the use of a high gain antenna. The performance may then be

calculated from the radar range equation. Further related information may be

obtained on application to Milliard Ltd.

2. It is essential that the earth terminal is used as the common return for the Gunnvoltage (+7V) and the d.c. bias supplied to the a. f. terminal.

3. The Gunn effect device has a voltage current characteristic as shown on page 5.

The power supply should have a low source impedance and be capable of supply-

ing up to 250mA at approximately 3V during the switch-on phase.

4. Noise measured at a frequency 1Hz to 1kHz from carrier.

5. The Gunn device will be damaged if the supply is reversed.

6. The module is supplied with a protection circuit connected between the mixer

a. f. and earth terminals. The mixer has a low junction capacitance and may be

damaged by transients of very short duration. It is therefore recommended that

soldering irons are isolated from mains supplies and that the protection circuit

is not removed when all wiring has been completed.

7. Precautions similar to those required for CMOS devices are necessary , namely

:

a) Earthed wrist straps should be worn.

b) Table tops or other working surfaces should be conductive and earthed.

c) Anti- static clothing should be worn.

d) No electrical testing should be carried out without specific, approved and

written test procedures.

e) To prevent the development of damaging transient voltages , devices should

not be inserted or removed from test fixtures with power applied.

8. The above conditions apply when operated into the antenna supplied with the

module.

9. A lOnF capacitor should be connected across and close to the +7V and earth

terminals to suppress parasitic oscillations in the power supply.

—™—

_

performance may be degraded if the antenna is covered by a

radome of unsuitable construction. Page 8 describes the preferred arrangement.


OUTLINE DRAWING

a^rA4

2 holes 04.2/4.051.5/51. centres

Recommendedscrews - M4

Antenna

12.3



CL8960

Max curve

I mo* 250

Max 165

Pt>3 7 Voltage (V)

Gunn device characteristic

®9 A.F. terminal

CL8960mixer

X

-7V

R1

100kn

R2lOkO

Bandwidth 1Hz to 1kHz

Z in >100kfl

Circuit used to measure A. F. performance

Notes

1. The current lb should be approximately 35/jA with the Gunn device disconnected

and approximately 42/nA with the Gunn device operational and the antenna oper-

ating into free space.

2. The coupling capacitor should have a small impedance compared with Z^.


> 1000

3n 7

100

10

,F:e et

Metres

M HK \— - nc

le

)ise — ^-

vel

—

10 100 1000

Target range (m and ft)

Minimum output for a man target



CL8960

Vertical B

Horizontal oQH°

Polar diagram for antenna supplied.


MODULE MOUNTING

For optimum signal to noise ratio , it is recommended that the module and antenna

are mounted, using M4 screws, to a 1. 6mm thick metal plate with aperture dimen-sions as shown on page 9.

In this configuration , the metal plate forms the front panel of the equipment , andthe antenna radiates into free space. If the equipment housing is all metal , anyback radiation will be totally contained. Alternatively a metal based adhesive tape

may be used to seal the joint between antenna and mounting plate.

The total mixer bias under the optimum operating conditions is approximately 42/xA.

(35^A d.c. Was + l\ih from -19dBm of coupled l.o. power.)

If, however, for environmental reasons, it is considered desirable to cover the

antenna aperture , then it is recommended that a thin plastic material (approximately

0. 25mm thick) is fixed to the metal plate with adhesive. A suitable plastic material

is detailed on page 9.

In this case, the l.o. power coupled to the mixer will be -lldBm, and the total

mixer bias current will now be approximately 60/^A.

The increase in 1. o. power will , in general give rise to an increase in a. f. output

voltage for a given target , but this will be accompanied by a degradation in signal

to noise ratio. For -lldBm of l.o. power, the degradation in signal to noise ratio

should be acceptable for most applications.

However, further increase in the level of coupled 1. o. power arising from the use

of thick or ' microwave ' reflective covering materials , will

:

(a) continue to increase the a. f . output voltage from the mixer (N. B. the increase

will not be the same for all modules) but at the same time, degrade the signal

to noise ratio.

(b) present a mismatch to the Gunn oscillator which may impair the switching andrunning performance and may 'pull' the frequency outside the allocated operat-

ing frequency band.

The following table compares the l.o. coupling level obtained for different covering

materials at the antenna.

L. 0. coupling

(dBm)

Mixer total bias

(HA)

Antenna covering

material

- 35 (d.c. only) -

-19 42 No covering

-15 50 1 to 2cm expanded

polythene or

polystyrene

-11 61 0. 25mm Gobex plastic

-6 70 0. 5mm Cobex plastic

Cobex is a product of: British Industrial Plastics

,

Sheet and Film Division

,

Brantham Works

,

Brantham

,

Manningtree, Essex CO 11 1NJ



CL8960

Cobex' plastic sheet(or equivalent)

ML screw

Aluminium panel1.6mm (16s.w.g.)

2 holes drill

04.2-CSK 07.0

Cobex 0.25mm sheet

Panel mounting details



CL8961


Fixed frequency Gunn oscillator and mixer cavity for operation In the 9.4 GHz

band. Applications include all forms of Doppler radar systems.

Centre frequency

Power output (at 7. OV) typ.

Output voltage (typ. ) far input power

IQOdB down on output powersignal + noise

at lSdB min.s

wn ,,_noise


Supply voltage

9.350

10

40

7,0

GHz

mW

V

OCTOBER 1978Mullard

CL8961 Page 1




)





Supply voltage (max. d.c.J


Tstg range

Tamb ranSe


Centre frequency


, .„ . signal + noise . .

18dB nun. —

-

fi :) (see

noise



Frequency fixed


Frequency pushing

Second harmonic


Polar diagram

MASS

20

9.338

+7. ± 0. 1 V

140 mA

30 to 35 MA

10 kn

+7.5

9.0

- 10 to +70

to +40

Min. Typ.

9. 350

Max.

V

°C

GHz

40 - MV

10 - mW9.350 9.362 GHz

-0.2 -0.3 MHz/>C

4.0 - MHz/V

35 - dBm

30 165 mA

see page 7

210


'




OPERATING NOTES

1. A return signal lOOdB down on radiated power will be achieved from a mantarget of radar cross -section 1. 0m2 at a range of 15m, when operating with the

antenna supplied (antenna gain is 5dB typ. )•

j , j signal + noise , „,

.

,

Extended range may be obtained for a reduced —=- : and tins may be° ' noise

acceptable if the environment in which the system operates is stable , i.e., free


obtained from a man target of radar cross -section 1.0m2 at a range of 25m and

thesi^n + nolse

is reduced to 15dB with an output voltage of l6piV min.noise

Alternatively , the range may be increased by an increase in target radar cross -




2. It is essential that the earth terminal is used as the common return for the Gunn

voltage (+7V) and the d.c. bias supplied to the a. f. terminal.












:









module.



10. —SHr— performance may be degraded if the antenna is covered by a


Milliard :

CL8961 Page 3

OUTLINE DRAWING

69

rffw*fl—

_

A7 :

2 holes 0C559.3/58.8 centres

Recommended screw M4

Antenna

12.5



CL8961

I mov250

9 A.F. terminal

Max curve

%3 7 Voltage (V)


+7V

i

CL8961mixer

R1

lOOkfl Bandwidth 1Hz to 1kHz

Z in >100kQ

T

R2iokn

Circuit used to measure A.F. performance

Notes

1. The current lb should be approximately 35fiA with the Gunn device disconnected

and approximately 42^A with the Gunn device operational and the antenna oper-ating into free space.



> 1000

eno

100

,F:e et

Metres

M n* \— - nc

le

>ise — *-

vel

10 100 1000





CL8961

90° 80 «

Vertical B

Horizontal |qQDo[



MODULE MOUNTING



In this configuration , the metal plate forms the front panel of the equipment , andthe antenna radiates into free space. If the equipment housing is all metal , anyback radiation will be totally contained. Alternatively a metal based adhesive tape


The total mixer bias under the optimum operating conditions is approximately 42jtA.

(35*/A d.c. bias + 7/iA from -19dBm of coupled l.o. power.)


antenna aperture, then it is recommended that a thin plastic material (approximately

0. 25mm thick) is fixed to the metal plate with adhesive. A suitable plastic materialis detailed on page 9.


mixer bias current will now be approximately 60/xA.

The increase in l.o. power will, in general give rise to an increase in a. f. output




However, further increase in the level of coupled l.o. power arising from the useof thick or * microwave' reflective covering materials, will:

(a) continue to increase the a. f. output voltage from the mixer ON* B. the increase


to noise ratio.

(b) present a mismatch to the Gunn oscillator which may impair the switching and

running performance and may ' pull * the frequency outside the allocated operat-

ing frequency band.

The following table compares the 1. o. coupling level obtained for different coveringmaterials at the antenna.

L. 0. cbupling

(dBm)

Mixer total bias

(tiA)

Antenna covering

material

- 35 (d.c. only) -

-19 42 No covering


polythene or

polystyrene




,

Sheet and Film Division,

Brantham Works

,

Brantham,




CL8961

Cobex' plastic

sheet (or equivalent)

ML screw

Aluminium panel

1.6mm (16s.w.g.)

2 holes drill

0LS -CSK

Cobex0.25mm sheet



CL8962


Fixed frequency Gunn oscillator and mixer cavity for operation In the 9. S GHzband. Applications Include all forms of Doppler radar systems.

Centre frequency 9, 47 GHz

Power output (at 7. OV) typ. 10 mwOutput voltage (typ. ) for input power

lOOdB down on output power

„ lft_ . signal + noiseat 18dB mln, " ig

noise

(see page 6 and note 1) 40 tiV

Supply voltage 7. V

MilliardOCTOBER 1976 CL8962 Page 1




)

D.C. mixer bias current (into a.f.





)

Supply voltage transient max.

(1.0ms max.)

Tstg ran8e

Tamb ranSe

•CHARACTERISTICS at 25 °C

Centre frequency


,-,_ . signal + noise . .

18dB min. —* : ) (seenoise



Frequency fixed


Frequency pushing


Polar diagram

20

9.458

+7. ± 0. 1 V

40 mA

30 to 35 MA

10 kS2

+7.5

9.0 V

10 to +70 °C

to +40 °C

Min. Typ.

9. 470

Max.

GHz

40 - »V

10 - mW

9.470 9.482 GHz

-0.2 -0.3 MHz/»C

4.0 - MHz/V

130 165 mA

see page 7

MASS 210


'




OPERATING NOTES ^1. A return signal lOOdB down on radiated power will be achieved from a man

target of radar cross-section 1.0m2 at a range of 15m, when operating with the


, . , , jo signal + noise . .,

.

,

Extended ranee may be obtained for a reduced —2-: and this may be° noise




theSlgPal +noise

is reduced to l5dB with an output voltage of 16/iV min.noise


-

















:



c) Anti -static clothing should be worn.






module.



10. Signal + noise . .,,....., . j*_—g performance may be degraded if the antenna is covered by a



OUTLINE DRAWING

69

Aa^ A

2 holes 0L.5

59.3/58.8 centres

7121

Recommended screw ML

T12.5

Antenna



CL8962

Notes

©o—

*

Max curve

I m««250

Max 165

%3 7 Voltage (V)


+ 7V

9 A.F. terminal

CL8962

R1

lOOkfl Bandwidth 1Hz to 1kHz

Z in >100kQ

CI

X

R2iokn


1. The current lb should be approximately 35^A with the Gunn device disconnected

and approximately 42jxA with the Gunn device operational and the antenna oper-




> 1000a.

o

100

10

,F:e et

Metres

M nx \— - nc

le

ise — ^-

vel

—

10 100 1000




CL8962

Vertical B

Horizontal <CC°

MODULE MOUNTING

For optimum signal to noise ratio , it is recommended that the module and antennaare mounted, using M4 screws, to a 1. 6mm thick metal plate with aperture dimen-sions as shown on page 9.

In this configuration, the metal plate forms the front panel of the equipment, andthe antenna radiates into free space. If the equipment housing is all metal , anyback radiation will be totally contained. Alternatively a metal based adhesive tapemay be used to seal the joint between antenna and mounting plate.

The total mixer bias under the optimum operating conditions is approximately 42^A.(35/iA d. c. bias + 7^A from - 19dBm of coupled 1. o. power.

)

If, however, for environmental reasons, it is considered desirable to cover theantenna aperture, then it is recommended that a thin plastic material (approximately0. 25mm thick) is fixed to the metal plate with adhesive. A suitable plastic materialis detailed on page 9.


mixer bias current will now be approximately 60/xA.

The increase in l.o. power will, in general give rise to an increase in a.f. outputvoltage for a given target, but this will be accompanied by a degradation in signalto noise ratio. For -lldBm of l.o. power, the degradation in signal to noise ratio


However, further increase in the level of coupled l.o. power arising from the useof thick or * microwave' reflective covering materials, will:

(a) continue to increase the a. f. output voltage from the mixer (N. B. the increasewill not be the same for all modules) but at the same time, degrade the signal

to noise ratio.

(b) present a mismatch to the Gunn oscillator which may impair the switching andrunning performance and may * pull ' the frequency outside the allocated operat*ing frequency band.

The following table compares the l.o. coupling level obtained for different coveringmaterials at the antenna.

. 0. coupling

(dBm)

Mixer total bias

0*A)

Antenna covering

material

- 35 (d. c. only) -

-19 42 No covering


polythene or

polystyrene




,


,

Brantham Works

,

Brantham

,




CL8962

Cobex' plastic


M4 screw

Aluminium panel

1.6mm (16s.w.g.)

2 holes drill

04.5 -CSK

Cobex0.25mm sheet

D8193a




CL8963


Fixed frequency Gunn osctEatoraud mixer cavity for operation In the 10. 5GHzband. Applications include all forms of Doppler radar systems.

Centre frequency

Power output (at 7.0V) typ.

Output voltage (typ. ) for Input power

lOOdB down on output powersignal + noise

at iSdB min. —= :

noise


Supply voltage

10. 525

10

40

7.0

GHz

mW

V

OCrrOBKR 1978





)






)


Tstg range

Tamb ranSe


Centre frequency


, ,_ . signal + noise . .

18dB min. —- : > (seenoise



Frequency fixed


Frequency pushing

Second harmonic


Polar diagram

MASS

Min.

20

10.513

+7.0 ±0.1 V

40 mA

30 to 35 HA

10 kg

+7.5

9.0 V

10 to +70 °C

to +40 °C

Typ. Max.

GHz

40 - fiV

10- mW

10. 525 10. 537 GHz

-0.2 -0.3 MHz/OC

4.0 - MHz/V

-35 - dBm

130 165 mA

see page 7

170


'



OPERATING NOTES -<

1. A return signal lOOdB down on radiated power will be achieved from a mantarget of radar cross -section 1.0m2 at a range of 15m, when operating with the


si2H3I *+ noiseExtended range may be obtained for a reduced —" and this may be

acceptable if the environment in which the system operates is stable , i.e., free



the—™

—

: is reduced to 15dB with an output voltage of 16/xV min.


-

section or by the use of a high gain antenna. The performance may then becalculated from the radar range equation. Further related information may beobtained on application to Milliard Ltd.



The power supply should have a low source impedance and be capable of supply-ing up to 250mA at approximately 3V during the switch-on phase.



6. The module is supplied with a protection circuit connected between the mixera. f. and earth terminals. The mixer has a low junction capacitance and may be





:



c) And -static clothing should be worn.

d) No electrical testing should be carried out without specific, approved andwritten test procedures.




module.



10. Signal + noise—x : performance may be degraded if the antenna is covered by a

OUTLINE DRAWING

jjSa^JL

^2 holes 04.2M.O51.5/51.0centres

Recommendedscrews - M4

Antenna

12.3



CL8963

l ma«250

Max 165 Max curve

Voltage (V)

Notes

lb

©


>7V

9 A.F. terminal

CL8962

~x

1R1

iookn

R2iokn

Bandwidth lHztolkHzZ in >100kn


1. The current lb should be approximately 35/xA with the Gunn device disconnected

and approximately 42pA with the Gunn device operational and the antenna oper-




> 1000

100

10

,F:e et

Metres

M nx \— - no

le

ise — ^-

vel

105 7 2

100 1000





CL8963

Vertical B

Horizontal p[XH



MODULE MOUNTING

For optimum signal to noise ratio , it is recommended that the module and antennaare mounted, using M4 screws, to a 1. 6mm thick metal plate with aperture dimen-sions as shown on page 9.

In this configuration, the metal plate forms the front panel of the equipment, andthe antenna radiates into free space. If the equipment housing is all metal , anyback radiation will be totally contained. Alternatively a metal based adhesive tape



(35^A d.c. bias + 7nA from -19dBm of coupled l.o. power.)



0. 25mm thick) is fixed to the metal plate with adhesive. A suitable plastic materialis detailed on page 9.


mixer bias current will now be approximately 60fiA.





However, further increase in the level of coupled 1. o. power arising from the useof thick or * microwave ' reflective covering materials , will

:

(a) continue to increase the a. f. output voltage from the mixer (N. B. the increase


to noise ratio.

(b) present a mismatch to the Gunn oscillator which may impair the switching andrunning performance and may 'pull' the frequency outside the allocated operat-ing frequency band.


L. 0. coupling

(dBm)

Mixer total bias

0*A)

Antenna covering

material

- 35 (d.c. (only) -

-19 42 No covering


polythene orpolystyrene



Cobex is a product of: British Industrial Plastics,


,

Brantham Works

,

Brantham,




CL8963

Cobex' plastic sheet

(or equivalent)

M4 screw


2 holes drill

0U.2-CSK 07.0

Cobex 0.25mm sheet

51.5

51.0




CL89E4


Fixed frequency Gunn oscillator and mixer cavity for operation In the 9.9 GHzband. Applications include all forms of Doppler radar systems.

Centre frequency

Power output {at 7.0V) typ.

Output voltage (typ.) for input power


__ , signal + noiseat lSdB min. —E —

noise


Supply voltage

9.900

10

40

7.0

GHz

mW

V

MilliardOCTOBER I97ti CL8964 Page 1




)






)


Tstg range

Tamb ranSe


Centre frequency


, DJ r, , signal + noise. .

l8dB min. ^^. ) (see

noise



Frequency fixed


Frequency pushing

Second harmonic


Polar diagram

20

9.978

+7.0 ±0.1 V

140 mA

30 to 35 MA

10 kQ

+7.5

9.0 V

-10 to +70 °C

to +40 °c

Min. Typ. Max.

- 9.990 - GHz

40 - VlV

10 - mW9.990 10.002 GHz

-0.2 -0.3 MHz/»C

4.0 - MHz/V

-35 - dBm

130 165 mA

see page 7

MASS 170

Alternative antennae and operating frequencies may be made to suit customers'


MuHardCL8964 Page 2


OPERATING NOTES

1. A return signal lOOdB down on radiated power will be achieved from a man

target of radar cross-section 1. Om2 at a range of 15m, when operating with the


Extended range may be obtained for a reduced ™. and this may be



obtained from a man target of radar cross -section 1. Om2 at a range of 25m and

thesignal + noise

ig reduced to l5dB ^^ ^ output voltage of 16^V min.noise


-





voltage (+7V) and the d. c. bias supplied to the a. f. terminal.












:









module.



.gnal + no se

performance may be degraded if the antenna is covered by a



OUTLINE DRAWING

s^p_ jjl

+2 holes 04,2/4.051.5/51.0 centres

> -2b »>

c

or >rn |

4.6

i

rn

+11

1 27.4.

< =3—r 26.8

12.3

"1 i

Recommended screws -M4.

y"T12.3

Antenna


CL8964

Max curve

%3 7


Voltage (V)

Notes

©9 A.F. terminal

CL8964-

mixer

I

+ 7V

R1

iookn

R210kfl


Z in >100kn

Circuit used to measure A.F. performance.

1. The current lb should be approximately 35j*A with the Gunn device disconnected

and approximately 42fiA with the Gunn device operational and the antenna oper-




D6010

> 1000a.

oo

G 5

o

at ,

put

voltag

o o

3O 7

10

k Fee t

Metres

Mnx \— — - rlOise — ^-

evel

1 „

10 100 1000

Target range {m and ft)



CL8964

Vertical B

Horizontal [«>CD<>|

MODULE MOUNTING


are mounted, using M4 screws, to a 1. 6mm thick metal plate with aperture dimen-

sions as shown on page 9.

In this configuration, the metal plate forms the front panel of the equipment, and

the antenna radiates into free space. If the equipment housing is all metal , any

back radiation will be totally contained. Alternatively a metal based adhesive tape


The total mixer bias under the optimum operating conditions is approximately 42jiA.

(35fiA d.c. bias + 7)iA from -19dBm of coupled l.o. power.)






mixer bias current will now be approximately 60mA.





However, further increase in the level of coupled l.o. power arising from the use

of thick or * microwave ' reflective covering materials , will

:

(a) continue to increase the a. f . output voltage from the mixer (N. B. the increase


to noise ratio.


running performance and may 'pull' the frequency outside the allocated operat-

ing frequency band.



L. 0. coupling

(dBm)

Mixer total bias

G*A)

Antenna covering

material

- 35 (d.c. only) -

-19 42 No covering






,


Brantham Works

,

Brantham,

Manningtree, Essex OOll 1NJ



CL8964

Cobex' plastic


ML screw

Aluminium panel

1.6mm (16s.w.g.)

2 holes drill

04.5-CSK

Cobex0.25mm sheet


X-BAND DQPPLERRADAR MODULE

CL8965


Fixed frequency Gunn oscillator and mtxer cavity for operation In the 10,

band. Applications include all forms of Doppler radar systems.

6GHz


Power output (at 7.0V) typ. 10 raW

Output voltage (typ. ) for Input power


. , aJn j signal + noiseat 18dB rain. —^ :

noise

(see page 6 and note 1) 40 *v

Supply voltage 7.0 V

MilliardOCTOBER 1978 CL896S Page 1




)






)


Tstg range

Tamb TanSe


Centre frequency


signal + noise>

+7. ± 0.

1

V

140 mA

30 to 35 MA

10 kQ

+7.5

9.0

-10 to +70

to +40

Min. Typ.

10. 565

Max.

V

°C

GHz

MASS

noise

notes 1 and 4 and page 6) 20 40 - MV

Output power at 7. 0V - 10 - mWFrequency fixed 10. 553 10. 565 10. 577 GHz

Frequency temperature coefficient - -0.2 -0.3 MHz/»C


Second harmonic - -35 - dBm

Diode current (see note 3)- 130 165 mA

Polar diagram see page

170

7

g

Alternative antennae and operating frequencies may be made to suit customers *



OPERATING NOTES <-

1. A return signal lOOdB down on radiated power will be achieved from a mantarget of radar cross-section 1. 0m2 at a range of 15m, when operating with the


, . , » , signal + noise , .. . ,

Extended range may be obtained for a reduced —— : and this may be° noise




the ^^—r-^— is reduced to 15dB with an output voltage of lojiV min.noise


-



obtained on application to Mullard Ltd.













7. Precautions similar to those required for CMOS devices are necessary, namely:









module.



—££=_ performance may be degraded if the antenna is covered by a

OUTLINE DRAWING

jjfUs-^ ,-lL

^2 holes 04..2M.O51. 5/ 51.0 centres

4>

Recommendedscrews - M4.

Antenna

12.3


CL8965

I m„x250

Max 165 Max curve

%3 Voltage (V)

Notes

lb


+7V

A.F. terminal

® CL8965mixer

~T

R1

iookn

CI

R2ioi<n


Z in >100kfl


1. The current lb should be approximately 35fzA with the Gunn device disconnected

and approximately 42^A with the Gunn device operational and the antenna oper-

D6010

> 1000a.

"O 7

oo

Cooc

fl» ,

put

voltag

o o

O 7

kFee t

10Metres

Max \— — - r»oise — ^-

evel

1

2 s 7 2 5 710 100 1000



MilliardCL8965Page 6

CL8965

Vertical B

Horizontal pQH<>

MODULE MOUNTING



In this configuration, the metal plate forms the front panel of the equipment, andthe antenna radiates into free space. If the equipment housing is all metal , anyback radiation will be totally contained. Alternatively a metal based adhesive tape



(35fiA d. c. bias + 7piA from - l9dBm of coupled 1. o. power.

)






mixer bias current will nowbe approximately 60fiA.

The increase in l.o. power will, in general give rise to an increase in a.f. output




However, further increase in the level of coupled l.o. power arising from the useof thick or ' microwave' reflective covering materials, will:

(a) continue to increase die a. f. output voltage from the mixer (N. B. the increase


to noise ratio.

(b) present a mismatch to the Gunn oscillator which may impair the switching andrunning performance and may 'pull' the frequency outside the allocated operat-

ing frequency band.


L. 0. coupling

@Bm)Mixer total bias

(MA)

Antenna covering

material

- 35 (d.c. only) -

-19 42 No covering






,


Brantham Works

,

Brantham

,




CL8965

'Cobex' plastic sheet(or equivalent)

M4 screw


2 holes drill

04.2-CSK 07.0

Cobex 0.25mm sheet




CL8967


Fixed frequency Gunn oscillator and mixer cavity for operation In tne 10. 4GHz

band. Applications Include all forms of Doppier radar systems,

10.365Centre frequency

Rower output (at 7.0V) typ.

Output voltage {typ. ) for Input power


_ _. , signal + noiseat l8dB mln. —E—

noise

{see page 6 and note 1)

Supply voltage

10

40

7.0

GHz

mW

V

MilliardOCTOBER 1978 CL8967 Page 1




)






)


Tstg range

Tamb ranSe


Centre frequency


, ,n signal + noise. .

18dB mm. —*: ) (see

noise



Frequency fixed


Frequency pushing

Second harmonic


Polar diagram

MASS

20

10.353

+7. ± 0.

1

V

140 mA

30 to 35 MA

10 kn

+7.5

9.0 V

10 to +70 °C

to +40 °C

Min. Typ.

10. 365

40

10

10. 365

-0.2

4.0

-35

130

see page 7

170

Max.

10. 377

-0.3

165

GHz

mWGHz

MHz/0C

MHz/V

dBm

mA

Alternative antennae and operating frequencies may be made to suit customers'specific requirements.



OPERATING NOTES ^_

1. A return signal lOOdB down on radiated power will be achieved from a mantarget of radar cross-section 1.0m2 at a range of 15m, when operating with the


signal + noise ,. ,

Extended range may be obtained for a reduced : and this may be° ' noise




the ———: is reduced to 15dB with an output voltage of 16/iV min.noise


-



obtained on application to Mullard Ltd.













:









module.



10. —™-

. performance may be degraded if the antenna is covered by a



OUTLINE DRAWING

*2 holes 0L2/LO51.5/51.0 centres

27.4.

Recommended screws -M4

Z_

KAntenna

12.3


CL8967

I mn»250

Max 165 Max curve

P«3 7 Voltage (V)


©9 A.F. terminal

CL8967

X

+ 7V

1R1

iookn

CI

R2ioi<n


Z in >100kn

Notes

Qrcuit used to measure A.F. performance

1. The current lb should be approximately 35fiA with the Gunn device disconnected

and approximately 42/xA with the Gunn device operational and the antenna oper-

> 1000

^ 7

100

10

vf: ee1

Metres

N1ax \— - n

li

oise — ^~

jvel

—

I

10 100 1000





CL8967

Vertical B

Horizontal pQD

Polar diagram for antenna supplied


MODULE MOUNTING


are mounted, using M4 screws, to a 1. 6mm thick metal plate with aperture dimen-

sions as shown on page 9.

In this configuration, the metal plate forms the front panel of the equipment, and

the antenna radiates into free space. If the equipment housing is all metal , any

back radiation will be totally contained. Alternatively a metal based adhesive tape


The total mixer bias under the optimum operating conditions is approximately 42/iA.

(35juA d.c. bias + 7/iA from -19dBm of coupled 1. o. power.)






mixer bias current will now be approximately 60(xA.

The increase in l.o. power will, in general give rise to an increase in a.f. output




However, further increase in the level of coupled l.o. power arising from the use

of thick or ' microwave ' reflective covering materials , will :

(a) continue to increase the a.f. output voltage from the mixer (N. B. the increase


to noise ratio.


running performance and may 'pull' the frequency outside the allocated operat-

ing frequency band.



L. 0. coupling

(dBm)

Mixer total bias

(jxA)

Antenna covering

material

- 35 (d. c. only) -

-19 42 No covering


polythene or

polystyrene




,


,

Brantham Works*

.

Brantham,Manningtree, Essex CO 11 1NJ



CL8967

Cobex' plastic


M4 screw

Aluminium panel

1.6mm (16s.w.g.)

2 holes drill

0U.S -CSK

Cobex0.25mm sheet


MISCELLANEOUS

H

MICROWAVEHORN ANTENNA ACX-OIA

TENTATIVE DATA

A general purpose X-band antenna for miniature radar systems.

The unit gives a low v. s. w. r. and is of a strong cast construction.

CHARACTERBTICS

Frequency range

Gain

Beam angle (both planes)

v.s.w. r. max.

MECHANICAL DATA

Weight

Flange

9.0 to 11 GHz

16 dB

30 deg

1.2

160 g

UBR100 (UG135/U)

OUTLINE DRAWING

Atl dimensions in mm

MAY 1976Milliard

ACX-01APage 1

X-BANDMIXER/DETECTOR

CL7500

Waveguide single ended mixer designed, for use in the 10. 7 GHz band. It is primarilyintended for Doppler control systems, e.g. intruder alarms deriving local oscillator

drive from the transmitter output of a Gunn effect device such as Mullard CL8630.The CL7500 can be used as a microwave detector. Two examples of this are sensingdeliberate beam obstruction in a microwave protected area and as receiver in a micro-wave barrier or fence.

ELECTRICAL CHARACTERISTICS (at 25 °C)

Centre frequency

Mixer

Sensitivity for -95 dBm input

Noise level (32 nA d.c. bias,

1 Hz to 1 kHz bandwidth) J)

Detector

min.

typ.

typ.

max.

Tangential sensitivity at centre frequency typ.

10.687


Centre frequency 10. 687 GHz

Typical sensitivity for -95 dBm input 15 nv

Typical noise level (32 pA d.c. bias,

1 Hz to 1 kHz bandwidth) 1.0 HV


IR (max.

)

5.0 mA

IpM P63^ forward current (max.

)

10 mA

Tstg range -10 to +100 °C


Tamb range -10 to +50 °C

Local oscillator level -18 dBm

D.C. bias 32 VA

Total load (d.c. and i.f.

)

10 kn

GHz

Tangential sensitivity from 10. 1 to 11.0 GHz 2) typ

10 MV15 MV

1.0 \iV

2.0 MV

-50 dBm-49 dBm

Notes see page 2

JULY 1976Mullard

CL7500Page 1

OUTLINE DRAWING

-19.8

<

45.2

-15.9-H

31.0 41.3


) When the local oscillator power is derived from a Gunn source with an a.m. noise to

carrier ratio of 94 dB (typically Milliard CL8630), the minimum sensitivity specified

represents a signal to noise ratio at the mixer output of 10 dB (typically 17 dB)*

2) When operated as a detector with 32 fiA. d. c. bias, measured in a to 2 MHz bandwidth.

3) The diode may be damaged if the bias supply is reversed.

4) The mixer diode will be damaged by forward current in excess of 10 mA. The moduleis supplied with a shorting strap connected between the mixer a.f. and earth terminals.

The mixer has a low junction capacitance and may be damaged by transients of veryshort duration. It is therefore recommended that soldering irons are isolated frommains supplies and that the shorting strap is not removed until all wiring has been

completed.

5) Connections to be made to W.G. 16 components.

MilliardCL7500Page2

X-BANDMIXER/DETECTOR

CL7520

Waveguide single ended mixer designed for use in the 9. 35 GHz band. It is primarily

intended for Doppler control systems, e.g. intruder alarms deriving local oscillator

drive from the transmitter output of a Gunn effect device such as Mullard CL8631 orCL8632.

The CL7520 can be used as a microwave detector. Two examples of this are sensingdeliberate beam obstruction in a microwave protected area and as receiver in a micro-wave barrier or fence.



Typical sensitivity for -95 dBm input 15 MV

Typical noise level (32 pA d. c. bias

,

1 Hz to 1 kHz bandwidth) 1.0 mv


IR (max.

)

IpKj P^k forward current (max.

)

l stgrange


Tamb range

Local oscillator level

D.C. Mas

Total load (d. c. and i. f.

)

ELECTRICAL CHARACTERISTICS (at 25 °Q

Centre frequency

Mixer

Sensitivity for -95 dBm input

Noise level (32 jjA d.c. bias,

1 Hz to 1 kHz bandwidth) 1)

Detector

Tangential sensitivity 2)

min.

typ.

typ.

max.

typ.

5.0 mA

10 mA

10 to +100 °C

-10 to +50 °C

-18 dBm

32 MA

10 kfl

9.35

10

15

1.0

2.0

50

GHz

MVMV

MVf*V

dBm

Notes see page 2

JUNE 1978Mullard

CL7520 Page 1

OUTLINE DRAWING

t— 23.05-*) (—18.52-)

62.0

cur nrj

4 holes

4.4

4.3

41.3 -

[- 32.5 -j

[f -f1

,,

£ 31.0 41.3\k- -*,


!) When the local oscillator power is derived from a Gunn source with an a. m. noise to

carrier ratio of 94 dB (typically Mullard CL8631 or CL8632) , the minimum sensitivity

specified represents a signal to noise ratio at the mixer output of 10dB (typically 14 dB).

2) When operated as a detector with 32^A d.c. bias, measured in a to 2 MHz bandwidth.

3) The diode may be damaged if the bias supply is reversed.

4) The mixer diode will be damaged by forward current in excess of 10 mA. The module

is supplied with a shorting strap connected between the mixer a. f. and earth terminals.

The mixer has a low junction capacitance and may be damaged by transients of very

short duration. It is therefore recommended that soldering irons are isolated frommain supplies and that the shorting strap is not removed until all wiring has been

completed.

5) Connections to be made to W.G. 16 components.


CL9022

PARAMETRIC AMPLIFIER

A single-diode non-degenerate parametric amplifier designed for use as a low-noise pre-amplifier in

microwave applications. It is supplied in a temperature stabilized enclosure with a solid state Gunn-

effect oscillator pump and integral power supply.


Power gain

Tuning range min.

Noise figure max.

Bandwidth

Input and output impedance

Mains supply

20

2.7 to 3.1

2.8

15

50

240 V, 2A, 50 Hz

dB

GHz

dB

MHz

ft


231 max-

Gain Gainadusting control

key access

p—249 max 80max

C

C

C

i

r

|--12i

Signal input

Type N pt"female coaxial

connectors

Signal output'

Mains input

(Plessey

connector)

74.

max

Tuning

Part view showingmicrometer guardremoved

u MilliardMay 1978

CL9022

RATINGS


Continuous r.f. input power max.

Input spike energy max.

Mains supply voltage max.

Ambient operating temperature range

Storage temperature range

CHARACTERISTICS {note 1)

Tamb=25°C

Power gain (recommended setting) (note 2)

Operating frequency

Noise figure

Bandwidth (note 3)

Input saturation level (note 4)

Gain stability per hour

per day

Mains voltage supply limits

MASS

100 mW500 nJ

276 Vac

20 to +55 oc

•30 to +70 °C

mm. typ. max.

- 20 - dB

2.7 - 3.1 GHz- 2.6 2.8 dB

12 - 18 MHz

-35 -32 - dBm

±0.1 dB

±0.5 dB

204 240 276 Vac

5.4 kg

Notes

1. These are given for matched conditions.

2. The gain-set attenuator is adjusted with the hexagonal key provided.

3. Measured to the 3 dB points at a gain setting of 20 dB.

4. This is the input level at which the gain is compressed by 1 dB, at a gain setting of 20 dB.

5. The amplifier is designed for ease of maintenance; both the temperature control system and the

Gunn oscillator power supply use field-replaceable plug-in boards.

May 1978

Milliard U

ISOLATORS ANDCIRCULATORS

ISOLATORS AND CIRCULATORS

GENERAL

Contents

Isolators and circulators, general section

Coaxial circulator series, bands IV — V, 100 W, u.h.f., TV

Coaxial circulator series, 300 W, u.h.f., TV

Coaxial circulator series, 500 W/1 kW, v.h.f., TV

Coaxial circulator series, bands IV - V, 500 W/2 kW, u.h.f., TV

Coaxial circulator/isolator series, octave bandwidth

Coaxial circulator/isolator series (3-port versions), standard bands

Coaxial circulator series (4-port versions), standard bands

Waveguide circulator series (3-port versions)

Waveguide circulator series (4-port versions)

Industrial heating isolators

Waveguide isolator series

Conversion lists of CL numbers to catalogue numbers and vice versa

page

1

8

10

12

14

16

20

23

24

26

28

30

34

u Milliard

GENERAL

ISOLATORS AND CIRCULATORS

riVTRODUCTION

Only a brief general description of isolators and circulators is given here: those readers seeking fuller

information are referred to our Application Book 'Isolators and Circulators'.

Isolators

An isolator is a passive non-reciprocal device which permits microwave energy to pass through it in onedirection whilst absorbing energy in the reverse direction. In the forward direction, that is the directionin which the energy is passed, the insertion loss is usually 0,3 to 0,5 dB in the frequency range forwhich the isolator has been designed. In the opposite direction the isolation is normally 30 dB butfor certain applications isolation can be made as high as 55 to 60 dB.

In the field displacement type of isolator, which is described later, a ferrite bar is mounted in a wave-guide and biased by a magnetic field. The non-reciprocal t ->haviour of this type of isolator is producedby gyromagnetic effects which occur between the high frequency magnetic field and the electrons in

the ferrite.

Circulators

A circulator is a passive non-reciprocal device with three or more ports. It contains a core of ferrite

material in which energy introduced into one port is transferred to an adjacent port, the other ports

being isolated.

Although circulators can be made with any number of ports, the most commonly used are 3-pcrt and4-port, the symbols for which are given in Figs 1 and 2.

Fig. 1 Symbol for 3-port circulator. Fig. 2 Symbol for 4-port circulator.

Energy entering port 1 emerges from port 2; energy entering port 2 emerges from port 3, and so on in

cyclic order. In this direction of circulation an ideal circulator would have no losses, but in practical

constructions there are some losses.

In an ideal circulator no energy would flow in the direction opposite to the circulation direction. Againin practice this isolation is in the order of 20 to 30 dB; in very narrow bands it is even higher. The non-reciprocal behaviour of circulators is the result of gyromagnetic effects in the ferrite when this is biased

with a magnetic field.

u MilliardSeptember 1977

GENERAL

APPLICATIONS

Isolators

JK.

The main application of an isolator is to improve the behaviour of klystrons, magnetrons or travelling-

wave tubes by isolating the source from the load. The main factor is that an antenna or amplifier can-

not be matched ideally to the preceding function over the required frequency range, so that energy

would be reflected back into the tube and upset the frequency stability. The isolator will absorb this

reflected energy so that the tube is effectively protected from these disturbing influences.

The isolators are provided with adjusting screws that enable them to be matched so that the v.s.w.r. is

minimum over a certain frequency range. It is therefore possible to optimize the efficiency of wave-

guide runs by matching the isolator to minimum reflection. This means that long line effects can be

drastically reduced.

Circulators

The main application of circulators is the duplexing of systems for simultaneous transmission and

reception in low and medium-power telecommunication equipment; this is illustrated in Figs 3 and 4.

(b)

0---6—5—

i

<

Fig. 3 Duplexing one receiver and

one transmitter with (a) a 3-port

circulator and (b) a 4-port.

Fig. 4 Duplexing of a number of transmitters (T)

and receivers (R).

The reasons that both 3-port and 4-port circulators are used are:

- a 3-port circulator usually has a wider bandwidth than a 4-port circulator;

- a 4-port circulator (of which the fourth port is provided with a matched load. Fig. 3(b)), however,

does not require a very accurately matched receiver, so that a much simpler filter can be used on

the receiver input.

A 3-port circulator can also be used as an isolator by putting a matched load on one port; Fig. 5. The

characteristics of a circulator performing a decoupling function are superior to those of an isolator,

particularly at the lower frequencies. Decoupling can be increased by cascading circulators. Decoupling

and insertion loss are directly proportional to the number of circulators. For additional information

refer to our Application Book 'Isolators and Circulators'.

September 1977

Mullard r?

Isolators and circulators GENERAL

(a)

-Q^MD^-Q^(b)

Fig. 5 A 3-port circulator used as

an isolator.

Fig. 6 Cascaded circulators (a) in H-configu ration,

(b) ^--configuration.

CONSTRUCTION

Waveguide isolators

A field displacement isolator is shown in Fig. 7. The ferrite bar (1) can be seen inside the waveguide,

flanked by two sets of magnets (2) outside the waveguide. These magnets bias the ferrite bar. The ad-

justing screws (3) protruding into the waveguide are used to match the isolator for minimum voltage

standing wave ratio.

Fig. 7 Field displacement isolator.

Waveguide circulators

Three or four waveguides intersect at angles of 120° or 90° respectively in this type of circulator. A4-port waveguide circulator of the junction type is shown in Fig. 8. A piece of ferrite (1 ) is located

between two magnets (2) exactly in the centre of the intersection. Posts (3) are placed in the wave-

guide to achieve a good match.

V MilliardSeptember 1977

GENERAL

Fig. 8 Construction of a junction type waveguide circulator.

Coaxial circulators

A coaxial circulator of the junction type is shown in Fig. 9. Three copper strips (1 ) intersect at 120° in

the centre of the circulator. The strips are mounted between two earth plates (2) to form a matchedhigh-frequency conductor. Two ferrite discs (3) and magnets (4) are mounted in the exact centre of the

circulator.

Fig. 9 Construction of a junction type coaxial circulator.

TERMS AND DEFINITIONS

Frequency range

This is the range within which the isolator or circulator meets the guaranteed specification. Outside

of this range the electrical properties deteriorate rapidly. Circulators, however, will not be damagedif erroneously subjected to frequencies outside the range.

September 1977T Milliard V

JKIsolation

In an isolator, isolation is the ratio of the input power to the output power in the reverse direction,

expressed in dB. The power measurements are made with matched source and matched load.

In a circulator, isolation is the ratio of the energy entering a port to the energy scattered into the

adjacent port in the reverse direction to normal circulation, expressed in dB. Measurements are made

with a matched source and all other ports correctly terminated. The isolation between ports 1 and 3,

«1_3, is equal to eg—2 and «2— 1 ^'9- ')•

Insertion loss

This is the attenuation which results from including an isolator or circulator in the transmission system.

Insertion loss is the proportion of power lost between the ports of the device when energy is travelling

in the forward direction, expressed in dB. Measurements are made with the input and output matched.


The v.s.w.r. is the ratio of the maximum voltage to the minimum voltage along a lossless line. In cir-

culators the v.s.w.r. is measured with all unused ports terminated by a matched load. Coaxial circulators

are designed with a characteristic impedance of 50 ohms.

Maximum power

Under no circumstances should the maximum power value for isolators and circulators be exceeded.

In an isolator, the maximum power is the largest power that may be passed through it in the forward

direction into a load with a v.s.w.r. of 2.

In a circulator, the maximum power is the largest power that it can handle at sea level and maximumambient temperature — and with cooling applied if specified in the data — when one port is terminated

with a mismatch having a v.s.w.r. of 2, and the next port is matched having a v.s.w.r. < 1,2.

The maximum power for coaxial circulators is the maximum continuous-wave power unless a maxi-

mum peak power is separately stated. These power levels should not be exceeded.

The peak power is the maximum peak sync power as defined by the CCIR signal standard. This value

is given for isolators and circulators at the v.h.f. and u.h.f. television frequencies. If this value is ex-

ceeded the isolator or circulator can be damaged by arcing in its internal transmission structure.

Peak power values are valid for one signal passage only.

Since the sound power Ps passes through the circulator twice in a signal-combining circulator, the

average power when Ps = 0,2PSync is given by P * 1,17PSync

.

Under worst-case conditions, the peak power produced for the same signal is given by

pM -V Psync +V Ps = Psync M + 2V<>,2)2 - 3,6Psync .

Temperature range

The ambient temperature range within which isolators and circulators function to specification.

(When necessary, special temperature compensation is built in for circulators.) Circulators still function

outside the temperature range but their electrical behaviour may be far outside the guaranteed specifi-

cations. However, no permanent damage can be expected unless a large temperature rise is caused by

excessive power handling.

The storage temperature of isolators may be from —40 to + 125 °C unless otherwise specified in the

data.

U Milliard 1 September 1977

GENERAL

_yv_CAUTIONARY NOTES

1. Isolators and circulators have internal magnetic fields that are carefully adjusted for optimumoperation.

2. Isolators and circulators are not to be subjected to strong external magnetic fields.

QUALITY GUARANTEESubject to the Conditions of Guarantee the Manufacturer guarantees the isolators/circulators supplied

to the purchaser to meet the specifications as published in the Manufacturer's Data Handbook and to

be free from defects in material and workmanship.

Under this guarantee the Manufacturer will within one year after shipment to the original purchaser

repair or replace at the Manufacturer's option, free of charge, any isolator/circulator proved by the

Manufacturer's inspection to be thus defective.

STANDARD TEST SPECIFICATIONS

Initial measurements

These measurements have been carried out at room temperature and at the extreme temperatures, with

a power level not exceeding 10 mW.

Tropical test

This test has been carried out completely in accordance with IEC 68 test D, accelerated damp heat.

This test begins with the temperature at 55 + 2 °C and R.H. at 95 to 100% for a period of 16 hours,

followed by a period of 8 hours with the temperature at + 25 °C and R.H. 80 to 100% to complete the

24-hour cycle: the test consists of 6 uninterrupted cycles.

Vibration test

This test has been carried out completely in accordance with MIL-STD-202D, method 201 A: frequency

range 10 to 55 to 10 Hz for 2 hours in each of the X, Y and Z directions, with a total excursion of

1,5 mm.

Thermal shock test

This test has been carried out completely in accordance with MIL-STD-202D, method 107C undercondition A: 5 cycles with extreme temperatures of —55 °C and +85 °C; duration of one cycle is

1 hour.

Mechanical shock test

This test has been carried out in accordance with MIL-STD-202D, method 213A under condition G;peak value 100 g, duration 6 ms, and also with extreme peak values up to 800 g, duration approxi-

mately 1 ms for each device, referring to the results of the drop test.

Drop test

This test has been carried out in accordance with ISO 2248, part IV: packaging complete, filled trans-

port packages, vertical impact.

R. F. power test

The devices have been tested in accordance with the definition of maximum power in the Data Hand-book (v.s.w.r.= 2). The ambient temperature of 25 °C was increased to the maximum operating tem-

perature and the duration of the test was 1 hour for each device.

September 1977"Y Milliard D


Final measurements

On completion of the above tests final measurements were carried out at a temperature of + 25 °Cand with a power level not exceeding 10 mW. The results of these tests should be within the guaran-

teed values.

Dimensions and visual appearance

These have been checked in accordance with the published data.

Note

On request, different tests and/or additional tests to those above can be carried out.

c? Milliard 1September 1977

COAXIAL CRCULATORS100 W, UJHF., TV

OO

m co co^- in in cm

3 *- CO «- r- CO» 8 o o o o<D t

CM CM CM CM<o CO CO CO

£ 3O t CM CM CM CM

CM CM CM CMr»> r-s r* r>CM CM CM CM

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,_o _w _a> _aj _a>

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oo z 2 2 2

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03

+ + + +O o o o oo *J

o o o o1 1 1 1

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*5X(0

eS 8 8 8 8d *~ ^ f— T—

in id in *o.>+-*

5 c m in in in(0 TO CN CM^ CM^ CM_

> fc 0>to a>3 +5 V V V V

U) in in

1c

Q. eno*

CO CO COo* o* o"

c~ m c

(A

ra to

to uC ay

o 8 8 §9) 9) N «» CO CO «-3 C X

51oo

1 1 Io o or» o en

f- * «a- to r»

o «

° £

o 52"5 O

t H

E £

V) oCo J2

<0 >c:

X)

F <o

o Oo

September 1977T Mullard C?

Isolators and circulators COAXIAL CRCULATORS

100 W, U.HF., TV

r- IQ (O (0tf SS tO CMCO t- r- COO O O O

u Mullard If September 1977

COAXIAL CRCULATORS300 W, U.HF., TV

XD

OoCO

COyDCIII

CO

CCOI-

DOCC

o-I

X<oo

CM tN CM CM CM CM CM CMS W 00 CO e» ^- COin co tn to tn CO CO CD

-1o o o o o o o oCM CM CM CM CM CM CM CMCO CO CO CO CO CO CO CO

o *- CM CM CM CM CM CM CM CMCM CM CM CM CM CM CM CMr«« r>. i-» fv r^ r*» l-» (^CM CM CM CM CM CM CM CM

X8 2

E a(0

O) 8 8 8 OO OO oo 8 ooCM CM CM CM CM CM CM CM

o « CO .2? CO 0J CO a> CO

* 1CO CO

E ?; E r>. bCD

1** E I--

*T U. *T LL **7 u. LLo 2 I Z I z I z I

a> o o o o o o o oZ3 CO CO CO CO CO CO CO CO

s & Oo

+ + +o o o

+o

+o

+o

+o

+o

a. re

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Mullard YSeptember 1977 33

GENERAL

CONVERSION LISTS

Catalogue Number Type

2722 161 ,.

.

Number

01071 CL6201

01081 CL6240

01091 CL6202

01101 CL6203

01151 CL6210

01161 CL6214

01171 CL6215

01181 CL6217

01191 CL6206

01211 CL6222

01221 CL6221

01231 CL6231

01241 CL6241

01251 CL6251

01261 CL6261

01271 CL6271

01291 CL6291

02081 CL5281

02091 CL5291

02101 CL5101

02191 CL5219

02231 CL5232

02261 CL5263

02271 CL5227

02281 CL5283

03001 CL5050

03011 CL5051

03031 CL5053

03041 CL5054

03051 CL5055

03061 CL5056

03081 CL5081

03091 CL5091


2722 162 Number

01121 CL5027

01131 CL5028

01141 CL5029

01261 CL5261

01271 CL5271

01281 CL5282

01331 CL5331

01491 CL5491

01501 CL5501

01511 CL551

1

01551 CL5551

01561 CL5561

01572 CL5372

01582 CL5382

01592 CL5392

01612 CL5312

01622 CL5322

01632 CL5332

01642 CL5342

01662 CL5362

01811 CL5811

01821 CL5821

01851 CL5851

01861 CL5861

01871 CL5871

01881 CL5881

01891 CL5891

01901 CL5901

01931 CL5931

01941 CL5941

01951 CL5951

02041 CL6041

02071 CL6071

34 September 1977

Milliard T)

GENERAL


2722 162 Number

02091 CL6091

02101 CL6101

02111 CL6111

02121 CL6122

02221 CL6223

02231 CL6232

03171 CL51 72

03181 CL5182

03261 CL5262

03301 CL5301

03411 CL5411

03431 CL5431

03441 CL5441

03591 CL5592

04031 CL5032

04041 CL5042

Catalogue Number

2722 163 . .

Type

Number

02004

02024

CL6204

CL6224


GENERAL

Type Catalogue

Number Number

CL5027 2722 162 01121

CL5028 2722 162 01131

CL5029 2722 162 01141

CL5032 2722 162 04031

CL5042 2722 162 04041

CL5050 2722 161 03001

CL5051 2722 161 03011

CL5053 2722 161 03031

CL5054 2722 161 03041

CL5055 2722 161 03051

CL5056 2722 161 03061

CL5081 2722 161 03081

CL5091 2722 161 03091

CL5101 2722 161 02101

CL5172 2722 162 03171

CL5182 2722 162 03181

CL5219 2722 161 02191

CL5227 2722 161 02271

CL5232 2722 161 02231

CL5261 2722 162 01261

CL5262 2722 162 03261

CL5263 2722 161 02261

CL5271 2722 162 01271

CL5281 2722 161 02081

CL5282 2722 162 01281

CL5283 2722 161 02281

CL5291 2722 161 02091

CL5301 2722 162 03301

CL5312 2722 162 01612

CL5322 2722 162 01622

CL5331 2722 162 01331

CL5332 2722 162 01632

CL5342 2722 162 01642

Type Catalogue

Number Number

CL5362 2722 162 01662

CL5372 2722 162 01572

CL5382 2722 162 01582

CL5392 2722 162 01592

CL5411 2722 162 03411

CL5431 2722 162 03431

CL5441 2722 162 03441

CL5491 2722 162 01491

CL5501 2722 162 01501

CL551^1 2722 162 01511

CL5551 2722 162 01551

CL5561 2722 162 01561

CL5592 2722 162 03591

CL5811 2722 162 01811

CL5821 2722 162 01821

CL5851 2722 162 01851

CL5861 2722 162 01861

CL5871 2722 162 01871

CL5881 2722 162 01881

CL5891 2722 162 01891

CL5901 2722 162 01901

CL5931 2722 162 01931

CL5941 2722 162 01941

CL5951 2722 162 01951

CL6041 2722 162 02041

CL6071 2722 162 02071

CL6091 2722 162 02091

CL6101 2722 162 02101

CL6111 2722 162 02111

CL6122 2722 162 02121

CL6201 2722 161 01071

CL6202 2722 161 01091

CL6203 2722 16101101

36 September 1977Mullard n

GENERAL

Type Catalogue

Number Number

CL6204 2722 163 02004

CL6206 2722 161 01191

CL6210 2722 161 01151

CL6214 2722 161 01161

CL6215 2722 161 01171

CL6217 2722 161 01181

CL6221 2722 161 01221

CL6222 2722 161 01211

CL6223 2722 162 02221

CL6224 2722 163 02024

CL6231 2722 161 01231

CL6232 2722 162 02231

CL6240 2722 161 01081

CL6241 2722 161 01241

CL6251 2722 161 01251

CL6261 2722 161 01261

CL6271 2722 161 01271

CL6291 2722 161 01291


INDEX TO BOOK 1 , PART 8

Type number Section Type number Section

ACX-01

A

H BAW95D CAEY17 D BAW95E CAEY29 D BAW95F CAEY29R D BAW95G CAEY31 D BAY96 E

AEY31A D BXY27 E

AEY32 D BXY28 E

BAT10 C BXY29 E

BAT 11 C BXY32 E

BAT31 B BXY35 E

BAT38 C BXY36 E

BAT39 C BXY37 E

BAT39A C BXY38 E

BAT50 C BXY39 E

BAT50R C BXY40 E

BAT51 C BXY41 E

BAT51

R

C BXY50 B

BAT52 C BXY51 B

BAT52R C BXY52 B

BAT59 C BXY53 E

BAV22 C BXY54 E

BAV22R C BXY55 E

BAV46 C BXY56 E

BAV72 C BXY57 E

BAV75 C BXY60 B

BAV96A C CAY 10 E

BAV96B C CL7500 HBAV96A C CL7520 H

BAV96D C CL8310 F

BAV97 C CL8630 F

Type Ntfmber Section Type number Section

CL8630S F CXY23B E

CL8631 F CXY23C E

CL8631S F CXY23D E

CL8632 F CXY24A B

CL8632S F CXY24B B

CL8633 F SIM2 see BAV22, R

CL8633S F SIM5 see BAV22, R

CL8640R F 1N23D see BAW95DCL8640T F 1N23DR see BAW95DCL8690 F 1N23E see BAW95E

CL8880BN G 1N23ER see BAW95ECL8880BNC G 1N23F see BAW95FCL8960 G 1N23G see BAW95GCL8961 G 1N23GR see BAW95GCL8962 G 1N23WE see BAW95E

CL8963 G 1N78D see BAT52CL8964 G 1N78DR see BAT52RCL8965 G 1N78E see BAT51CL8967 G 1N78ER see BAT51

R

CL9022 \

CXY10

H 1N415D see BAW95D

E 1N415E see BAW95ECXY11A B 1N415F see BAW95FCXY11B B 1N415G see BAW95GCXY11C B 1N5152 ECXY12 E 1N5153 E

CXY14A B 1N5155 ECXY14B B 1N5157 ECXY14C B

'

CXY19 B

CXY19A B

CXY19B BCXY21 B

CXY22A E

CXY22B E

CXY23A E

MICROWAVE SEMICONDUCTORSAND COMPONENTS

CONTENTS

4 SELECTION GUIDE (see coloured pages)

EA GENERAL SECTION

\ B GUNN, IMPATT AND NOISE DIODES

E C M IXER AND DETECTOR DIODES

E D BACKWARD DIODES

! EVARACTOR DIODES (Multiplier, specialpurpose and tuning types)

jF GUNN OSCILLATORS

!G DOPPLER AND TRAFFIC RADARS

j H MISCELLANEOUS

jJ ISOLATORS AND CIRCULATORS

4 INDEX

Mullard Limited

Mullard House, Torrington Place, London, WC1E 7HD

3 0)73 <O 4)

2 »CD (D

ST Io

55a

c

CD

t£

CD

Printed in England

TP 1818 (3

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