Amplifier Layout

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  • KLE Societys B.V. Bhoomaraddi College of Engineering and Technology,

    Hubli

    11/5/2014

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    A LAYOUT DESIGN OF SINGLE ENDED DIFFERENTIAL AMPLIFIER

    Under the guidance of Dr. R B Shettar

    Mentor : Mr. Charan

    By, Mr. Abhishek C Math

  • Overview

    Objective

    What is Layout??.

    Types of Layout

    Matching of Device

    Layout Design Techniques

    Specification

    Diff pair layout

    Results

    concluison

    References

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  • Objective

    Design the layout of Single ended Differential

    Amplifier and verify the post layout simulation with the Schematic

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  • Analog Layout Design

    What is Layout??...

    The process of creating an accurate physical representation of an engineering drawing (netlist) that conforms to constraints imposed by the manufacturing process, the design flow and the performance requirements shown to be feasible by simulation.

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  • Full Custom IC Design Flow

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  • Types of Layout :

    1.Building Block Layout

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  • 2.Interconnection Layout

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  • 3. Floorplanning layout

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  • MATCHING OF A DEVICE

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  • MATCHING

    Two devices with the same physical layout never have quite the same electrical properties.

    Variations between devices are called mismatches

    A large variety of analog circuits rely on Matching of transistors. Circuits like differential pair rely on gate to source voltage matching while current mirrors rely on current matching.

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  • REASONS FOR MISMATCH

    Mismatches may be either random or systematic, or a combination of both.

    Suppose two matched devices have parameters P1 and P2.

    Then let the mismatch between the devices equal P = P2 P1.

    For a sample of units, measure P . Compute sample mean m(P ) and standard

    deviation s(P ).

    m(P ) is a measure of systematic mismatch. s(P) is a measure of random mismatch.

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  • RANDOM MISMATCH

    Random mismatches due to microscopic fluctuations in dimensions, doping, oxide thickness and other

    parameters that influence component values.

    Random mismatches cannot be eliminated, but they can be reduced by increasing device dimensions

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  • SYSTEMATIC MISMATCH

    Systematic mismatches which are caused by :

    Process biases

    Mechanical stress

    Temperature gradients

    Polysilicon etch rates etc

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  • Systematic mismatches may also arise from gradients.

    Certain physical parameters may vary gradually across an integrated circuit, for example:

    Temperature

    Pressure

    Oxide thickness

    Because of the way we mathematically treat these variations, they are called gradients.

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  • Rules for MOS transistor matching

    Place transistors in close proximity. Orient transistors in the same direction. Keep the layout of the transistors as compact as

    possible Whenever possible use Common centroid layouts. Place transistors segments in the areas of low stress

    gradients. Place transistors well away from the power devices. For current matching keep overdrive voltage large. For voltage matching keep overdrive voltage

    smaller.

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  • Layout Design Techniques

    1. Interdigitization

    Process gradient almost evenly distributed between components A and B . A and B are split into units

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  • Common Centroid

    Perfect cancelation of linear gradients. Several patterns are possible. Can split A and B into

    more than two units.

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  • SPECIFICATION

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  • SCHEMATIC

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  • PRE SIMULATION

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  • LAYOUT OF DIFF PAIR

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  • RC EXTRACTION

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  • POST SIMULATION

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  • Result

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    SPECIFICATION PRE SIMULATION POST SIMULATION

    DC GAIN(dB) 51.92 51.9

    UGB(MHz) 10.54 10.38

  • Conclusion

    The layout of single ended differential amplifier is designed in cadence UMC 180nm technology virtuoso.

    Pre and post simulation is verified.

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  • References

    Seong K. Hong and Phillip E. Allen [21a. 'ANALOG CIRCUIT LAYOUT WIT'H OPTIMIZED PERFORMANCE"

    Alan Hastings." The Art of Analog Layout (Sencond Edition), 2007."

    Behzad Razavi, . "Design of Analog CMOS Integreated Circuits, 2001."

    Dan Clein."CMOS IC LAYOUT Concepts, Methodologies, and Tools

    Pelgrom, M. J. M., Duinmaiger, A. C. J., and Welbers, A. P. G., Matching Properties of MOS Transistors, IEEE J. Solid-State Circuits, Vol. SC-24, Oct. 1989, pp. 1433-1439

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  • THANK YOU

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